Light emitting diode and light emitting device

Abstract

The present application relates to the technical field of semiconductor manufacturing, in particular to a light emitting diode, which comprises a first semiconductor layer, a light emitting layer, a second semiconductor layer, a groove and a blocking body structure, the first semiconductor layer has opposite upper and lower surfaces, the light emitting layer is arranged on the upper surface of the first semiconductor layer, the second semiconductor layer is arranged on the light emitting layer, the groove extends from the upper surface of the first semiconductor layer to the lower surface of the first semiconductor layer, and the blocking body structure is arranged on the first semiconductor layer close to the groove, wherein, viewed from above the light emitting diode towards the first semiconductor layer, the first semiconductor layer at least surrounds two side edges of the groove, and the blocking body structure and the light emitting layer are independent of each other. In this way, by arranging the blocking body structure, the height difference can be reduced, the die bonding cavity rate can be reduced, the contact points during metal peeling can be increased, and metal peeling is facilitated; the blocking body structure can also serve as a light guide column and play a light reflection effect, so that the light emitting performance of the light emitting diode is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a light-emitting diode and a light-emitting device. Background Technology

[0002] A light-emitting diode (LED) is a semiconductor light-emitting element, typically made of semiconductors such as GaN, GaAs, GaP, and GaAsP. Its core is a PN junction that emits light. LEDs possess advantages such as high luminous intensity, high efficiency, small size, and long lifespan, and are considered one of the most promising light sources available today. LEDs are widely used in lighting, monitoring and command systems, high-definition broadcasting, high-end cinemas, office displays, interactive conferencing, virtual reality, and other fields.

[0003] In recent years, the immense application value of ultraviolet (UV) LEDs, especially deep UV LEDs, has attracted significant attention and become a new research hotspot. To improve the performance characteristics of UV LEDs, a series of new processes have been introduced, referencing... Figure 1 and Figure 2 As shown, LEDs manufactured using existing processes effectively reduce their operating voltage by forming multiple trenches at the edges. However, this increased number of edge trenches also leads to a higher risk of die-bonding void ratio during later packaging and use due to the larger height difference H. Furthermore, it increases the risk of moisture infiltration during later use.

[0004] It should be noted that the information disclosed in this background section is intended only to enhance the understanding of the overall background of the present invention, and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Summary of the Invention

[0005] An embodiment of the present invention provides a light-emitting diode (LED) comprising a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a groove, and a retaining structure. The first semiconductor layer has opposing upper and lower surfaces. The light-emitting layer is disposed on the upper surface of the first semiconductor layer. The second semiconductor layer is disposed above the light-emitting layer. The groove extends from the upper surface of the first semiconductor layer to the lower surface of the first semiconductor layer. The retaining structure is disposed on the first semiconductor layer close to the groove. Viewed from above the LED towards the first semiconductor layer, the first semiconductor layer surrounds at least two sides of the groove. The retaining structure and the light-emitting layer are disposed independently of each other.

[0006] An embodiment of the present invention also provides a light-emitting diode (LED) comprising a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a groove, and a retaining structure. The first semiconductor layer has opposing upper and lower surfaces. The light-emitting layer is disposed on the upper surface of the first semiconductor layer. The second semiconductor layer is disposed above the light-emitting layer. The groove extends from the upper surface of the first semiconductor layer to the lower surface of the first semiconductor layer. The retaining structure is disposed on the first semiconductor layer. Viewed from above the LED towards the first semiconductor layer, the first semiconductor layer surrounds at least two sides of the groove. The retaining structure is independent of the light-emitting layer, and there are multiple retaining structures. A groove exists between two adjacent retaining structures, and a predetermined distance exists between the retaining structure and the groove.

[0007] In some embodiments, the first semiconductor layer includes a doped layer and an undoped layer, the doped layer being located between the undoped layer and the light-emitting layer, and the groove penetrating the doped layer.

[0008] In some embodiments, when viewed from above the light-emitting diode toward the first semiconductor layer, grooves are distributed at least at the periphery of the first semiconductor layer.

[0009] In some embodiments, the light-emitting diode further includes a substrate disposed on the lower surface of the first semiconductor layer, with a groove penetrating the first semiconductor layer to expose the substrate.

[0010] In some embodiments, the blocking structure includes a first blocking body and a second blocking body, the first blocking body being disposed on a first semiconductor layer, the second blocking body being disposed on a first blocking body, the first blocking body being made of the same material as the light-emitting layer, and the second blocking body being made of the same material as the second semiconductor layer.

[0011] In some embodiments, the barrier structure further includes a third barrier located between the first semiconductor layer and the first barrier, the third barrier being made of the same material as the first semiconductor layer.

[0012] In some embodiments, the upper surface of the baffle structure is flush with the upper surface of the second semiconductor layer.

[0013] In some embodiments, the light-emitting diode further includes a first electrode and a second electrode, wherein the first electrode is electrically connected to a first semiconductor layer and the second electrode is electrically connected to a second semiconductor layer.

[0014] In some embodiments, the first electrode includes a finger electrode, which is viewed from above the light-emitting diode toward the first semiconductor layer, with a portion of the groove distributed within the finger electrode.

[0015] In some embodiments, the first electrode is a distributed electrode, and a portion of the baffle structure overlaps with the distributed electrode.

[0016] In some embodiments, when viewed from above the light-emitting diode toward the first semiconductor layer, a portion of the baffle structure extends from the edge of the first semiconductor layer toward the center of the first semiconductor layer to protrude from the first electrode, and the distance by which the baffle structure protrudes from the first electrode ranges from 0.1 to 30 μm.

[0017] In some embodiments, when viewed from above the light-emitting diode toward the first semiconductor layer, a portion of the baffle structure extends from the edge of the first semiconductor layer toward the center of the first semiconductor layer until its end is located inside the first electrode, and the distance from the extended end of the baffle structure to the first electrode ranges from 0.1 to 20 μm.

[0018] In some embodiments, when viewed from above the light-emitting diode toward the first semiconductor layer, a portion of the baffle structure extends from the edge of the first semiconductor layer toward the center of the first semiconductor layer until its end is located within the first electrode, and the distance from the extended end of the baffle structure to the groove ranges from 0.1 to 12 μm.

[0019] In some embodiments, viewed from above the light-emitting diode towards the first semiconductor layer, a portion of the baffle structure extends from the edge of the first semiconductor layer toward the center of the first semiconductor layer, and the distance from the sidewall of the baffle structure to the groove ranges from 0.1 to 25 μm.

[0020] In some embodiments, when viewed from above the light-emitting diode toward the first semiconductor layer, the baffle structure is disposed around the groove.

[0021] An embodiment of the present invention also provides a light-emitting device, which employs the light-emitting diode provided in any of the above embodiments.

[0022] An embodiment of the present invention provides a light-emitting diode and a light-emitting device. By setting a baffle structure, while ensuring a lower operating voltage, it can reduce the voltage difference, reduce the die-bonding void ratio, increase the contact points during metal stripping, and facilitate metal stripping; it can also act as a light guide post, providing a reflective effect and improving the light emission performance of the light-emitting diode. Simultaneously, no ohmic contact is formed between the baffle structure and the first electrode; the current here only spreads laterally through the first electrode, achieving a similar effect to blocking current and improving current diffusion capability. Furthermore, when the baffle structure is arranged around the groove, it can also prevent water vapor infiltration.

[0023] Other features and advantages of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a top view diagram of an existing LED structure;

[0026] Figure 2 It is along Figure 1 A schematic diagram of the longitudinal section cut by the intercept line AA;

[0027] Figure 3 This is a top view schematic diagram of the light-emitting diode provided in the first embodiment of the present invention;

[0028] Figure 4A It is along Figure 3 A schematic diagram of the longitudinal section cut by the intercept line AA;

[0029] Figure 4B yes Figure 3 Enlarged view of region B in the middle;

[0030] Figure 5 This is a schematic diagram of the groove provided in another embodiment of the present invention;

[0031] Figure 6 This is a top view schematic diagram of the light-emitting diode provided in the second embodiment of the present invention;

[0032] Figure 7 It is along Figure 6 A schematic diagram of the longitudinal section cut by the intercept line AA;

[0033] Figure 8 This is a top view of the light-emitting diode provided in the third embodiment of the present invention;

[0034] Figure 9A This is a top view schematic diagram of the light-emitting diode provided in the fourth embodiment of the present invention;

[0035] Figure 9B yes Figure 9A Enlarged view of region B in the middle;

[0036] Figure 10 This is a top view of the light-emitting diode provided in the fifth embodiment of the present invention.

[0037] Figure label:

[0038] 10-Substrate; 12-First semiconductor layer; 121-Doped layer; 122-Undoped layer; 14-Light-emitting layer; 16-Second semiconductor layer; 18-Groove; 20-Block structure; 201-First block; 202-Second block; 203-Third block; 21-First electrode; 22-Second electrode; 24-Insulating layer; 241-First opening; 242-Second opening; 31-First connecting electrode; 32-Second connecting electrode; 41-First pad; 42-Second pad; L1-Preset spacing; S1, S2, S3, S4-Distance. Detailed Implementation

[0039] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. The technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0040] In the description of this invention, it should be understood that the terms "center," "lateral," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more. Additionally, the term "comprising" and any variations thereof mean "at least comprising."

[0041] Please see Figure 3 , Figure 4A and Figure 4B , Figure 3 This is a top view schematic diagram of the light-emitting diode provided in the first embodiment of the present invention. Figure 4A It is along Figure 3 A schematic diagram of the longitudinal section intercepted by the intercept line AA. Figure 4B yes Figure 3An enlarged schematic diagram of region B. To achieve at least one or more of the aforementioned advantages, one embodiment of the present invention provides a light-emitting diode. As shown in the figure, the light-emitting diode may include a first semiconductor layer 12, a light-emitting layer 14, a second semiconductor layer 16, a groove 18, and a retainer structure 20.

[0042] A first semiconductor layer 12 may be disposed on a substrate 10. The substrate 10 may be an insulating substrate, preferably made of a transparent or translucent material. In the illustrated embodiment, the substrate 10 is a sapphire substrate. In some embodiments, the substrate 10 may be a patterned sapphire substrate, but this patent is not limited thereto. The substrate 10 may also be made of a conductive or semiconductor material. For example, the substrate 10 material may include at least one of silicon carbide, silicon, magnesium aluminum oxide, magnesium oxide, lithium aluminum oxide, aluminum gallium oxide, and gallium nitride.

[0043] The first semiconductor layer 12 has opposing upper and lower surfaces. The first semiconductor layer 12 can be an N-type semiconductor layer, capable of supplying electrons to the light-emitting layer 14 under power. In some embodiments, the first semiconductor layer 12 includes an N-type doped nitride layer. The N-type doped nitride layer may include one or more N-type impurities of group IV elements. The N-type impurities may include one or a combination of Si, Ge, and Sn. In some embodiments, a buffer layer may be provided between the first semiconductor layer 12 and the substrate 10 to mitigate lattice mismatch between the substrate 10 and the first semiconductor layer 12. The buffer layer may include an un-doped GaN layer (u-GaN) or an un-doped AlGaN layer (u-AlGaN). The first semiconductor layer 12 may also be connected to the substrate 10 via an adhesive layer.

[0044] A light-emitting layer 14 is disposed on the upper surface of the first semiconductor layer 12. The light-emitting layer 14 can be a quantum well (QW) structure. In some embodiments, the light-emitting layer 14 can also be a multiple quantum well (MQW) structure, wherein the multiple quantum well structure includes multiple quantum well layers (Wells) and multiple quantum barrier layers arranged alternately in a repeating manner, such as a GaN / AlGaN, InAlGaN / InAlGaN, or InGaN / AlGaN multi-quantum well structure. Furthermore, the composition and thickness of the well layers within the light-emitting layer 14 determine the wavelength of the generated light. To improve the luminous efficiency of the light-emitting layer 14, this can be achieved by changing the depth of the quantum wells, the number of paired quantum wells and quantum barriers, the thickness, and / or other characteristics within the light-emitting layer 14.

[0045] The second semiconductor layer 16 is disposed above the light-emitting layer 14. The second semiconductor layer 16 can be a P-type semiconductor layer, which can provide holes to the light-emitting layer 14 under power. In some embodiments, the second semiconductor layer 16 includes a P-type doped nitride layer. The P-type doped nitride layer may include one or more P-type impurities. The P-type impurities may include one or a combination of Mg, Zn, and Be. The second semiconductor layer 16 can be a single-layer structure or a multi-layer structure with different compositions. Furthermore, the epitaxial structure is not limited to this; other types of epitaxial structures can be selected according to actual needs.

[0046] The groove 18 extends from the upper surface of the first semiconductor layer 12 to the lower surface of the first semiconductor layer 12. By forming the groove 18, the overall operating voltage of the light-emitting diode can be effectively reduced, and the photoelectric quality of the light-emitting diode can be improved. Preferably, the depth of the groove 18 is in the range of 0.5 to 8 μm, and the effect of reducing the operating voltage is better within this range.

[0047] The baffle structure 20 is disposed on the first semiconductor layer 12 close to the groove 18. In other words, viewed from above, the baffle structure 20 is directly connected to the groove 18, with no gap between them. The baffle structure 20 and the light-emitting layer 14 are independently disposed. That is, the position of the baffle structure 20 is separated from the light-emitting area of ​​the light-emitting layer 14. The baffle structure 20 is disposed around the groove 18. By setting the baffle structure 20 at the groove 18, while ensuring a lower operating voltage, it can reduce the height difference (the height difference between the subsequently disposed first electrode 21 and second electrode 22), reduce the die-bonding void ratio, increase the contact points during metal stripping, and facilitate metal stripping; it can also act as a light guide, providing a reflective effect and improving the light emission performance of the LED. Simultaneously, the baffle structure 20 prevents the formation of an ohmic contact between the first electrode 21 and the first semiconductor layer 12. The current here only spreads laterally through the first electrode 21, achieving a similar effect to blocking current and improving current diffusion capability. Furthermore, since the baffle structure 20 is directly connected to the groove 18, there is no gap between the two, which can also prevent moisture from entering through the groove 18, reducing the risk of aging and other problems.

[0048] Viewed from above the light-emitting diode towards the first semiconductor layer 12, i.e. Figure 3 As shown, the first semiconductor layer 12 surrounds at least two sides of the groove 18, and the groove 18 is distributed at least at the outer periphery of the first semiconductor layer 12. Preferably, the first semiconductor layer 12 surrounds at least three sides of the groove 18, or 3 / 4 of the side edge, which helps to reduce the overall operating voltage of the light-emitting diode. In some embodiments, the first semiconductor layer 12 only needs to surround at least 1 / 2 of the side edge of the groove 18.

[0049] The lower end of the baffle structure 20 can be directly connected to the upper end of the groove 18. When viewed from above the light-emitting diode towards the first semiconductor layer 12, the baffle structure 20 and the groove 18 are directly connected without any gap in between, so as to enhance the protective effect of the baffle structure 20, prevent moisture from entering through the groove 18, and reduce the risk of aging.

[0050] In some embodiments, the first semiconductor layer 12 may include a doped layer 121 and an undoped layer 122. The doped layer 121 is located between the undoped layer 122 and the light-emitting layer 14. The doped layer 121 refers to a structural layer doped with N-type or P-type impurities, and the undoped layer 122 refers to an unintentionally doped layer 121, such as a u-GaN or u-AlGaN layer. The groove 18 completely penetrates the doped layer 121, exposing the undoped layer 122, to prevent short circuits caused by conductive connections in the doped layer 121.

[0051] In some embodiments, the baffle structure 20 includes a first baffle 201 and a second baffle 202. The first baffle 201 is disposed on the first semiconductor layer 12, and the second baffle 202 is disposed on the first baffle 201. In some embodiments, the baffle structure 20 can be formed by selectively leaving a predetermined area of ​​the second semiconductor layer 16 and the light-emitting layer 14 (i.e., not etching away the predetermined area of ​​the second semiconductor layer 16 and the light-emitting layer 14) during the process stage of etching the second semiconductor layer 16 to expose the first semiconductor layer 12, thereby simplifying the process and reducing costs. Therefore, the material of the first baffle 201 can be the same as that of the light-emitting layer 14, and the material of the second baffle 202 can be the same as that of the second semiconductor layer 16. However, this embodiment is not limited to this. In other embodiments, the first baffle 201 and the second baffle 202 can be sequentially disposed on the first semiconductor layer 12 using other materials to form the baffle structure 20, which can also achieve the desired purpose. For example, the material of the baffle structure 20 can be an insulating material, including at least one selected from the group consisting of SiO2, SiN compounds, Al2O3, or TiO2, in which case the light guiding effect of the baffle structure 20 is better.

[0052] In some embodiments, the baffle structure 20 may further include a third baffle 203, which is located between the first semiconductor layer 12 and the first baffle 201. Similarly, the third baffle 203 may be formed by selectively leaving a portion of the first semiconductor layer 12 in a preset area during the etching process, that is, the material of the third baffle 203 is the same as that of the first semiconductor layer 12. Alternatively, the third baffle 203 may be formed of other materials.

[0053] In some embodiments, the height of the upper surface of the baffle structure 20 is flush with the height of the upper surface of the second semiconductor layer 16, thereby reducing the height difference between the subsequent first electrode 21 and the second electrode 22 and reducing the die-bonding void ratio. Preferably, the height difference between the first electrode 21 and the second electrode 22 ranges from 0 to 1400 angstroms. This takes into account the different thicknesses of the deposited first electrode 21 and the second electrode 22, or the different thicknesses caused by the presence of other layers, such as ITO layers, CBL layers, etc. (not shown in the figure). That is, there is a case where the deposited first electrode 21 is thicker and the second electrode 22 is thinner, there is a case where the deposited first electrode 21 is thinner and the second electrode 22 is thicker, and there is also a case where the deposited first electrode 21 and the second electrode 22 have the same thickness.

[0054] The light-emitting diode also includes a first electrode 21 and a second electrode 22. The first electrode 21 is electrically connected to the first semiconductor layer 12. The first electrode 21 can be a single-layer, double-layer, or multi-layer structure, such as a stacked structure of Ti / Al, Ti / Al / Ti / Au, Ti / Al / Ni / Au, V / Al / Pt / Au, etc.

[0055] The second electrode 22 is electrically connected to the second semiconductor layer 16. The second electrode 22 can be made of a transparent conductive material or a metallic material, and its suitability can be selected according to the doping of the surface layer (such as a p-type GaN surface layer) of the second semiconductor layer 16. In some embodiments, the second electrode 22 is made of a transparent conductive material, which may include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium-doped zinc oxide (GZO), tungsten-doped indium oxide (IWO), or zinc oxide (ZnO), but the embodiments disclosed herein are not limited thereto.

[0056] In some embodiments, the first electrode 21 includes finger electrodes. Viewed from above the light-emitting diode towards the first semiconductor layer 12, a portion of the grooves 18 are distributed within the finger electrodes, forming segmented grooves 18. Because the epitaxial structure (second semiconductor layer 16, light-emitting layer 14, and at least a portion of the first semiconductor layer 12) at the grooves 18 is removed, current is restricted at this location, preventing lateral injection and effectively blocking current, thus improving current diffusion. Furthermore, the second semiconductor layer 16 encloses the grooves 18 located at the finger electrodes. By forming the grooves 18 between the second semiconductor layers 16, the first electrode 21 located at these grooves 18 can reflect more light to the substrate 10, improving the light extraction performance of the light-emitting diode.

[0057] In some embodiments, viewed from above the light-emitting diode towards the first semiconductor layer 12, a portion of the baffle structure 20 extends from the edge of the first semiconductor layer 12 toward the center of the first semiconductor layer 12 until it protrudes beyond the first electrode 21. That is, the baffle structure 20 protrudes beyond the surrounding first electrode 21. The distance S1 from the protrusion of the baffle structure beyond the first electrode ranges from 0.1 to 30 μm, maximizing the area of ​​the baffle structure 21. This increases the contact points during metal stripping, facilitating metal stripping, prevents moisture ingress, reduces aging failure, increases the die-bonding area, increases thrust, reduces height differences, and reduces die-bonding void ratio. Furthermore, the distance S2 from the groove 18 to the sidewall of the baffle structure 20 is 0.1 to 25 μm, maximizing the area of ​​the baffle structure 21. This increases the contact points during metal stripping, facilitating metal stripping, prevents moisture ingress, reduces aging failure, increases the die-bonding area, increases thrust, reduces height differences, and reduces die-bonding void ratio.

[0058] In some embodiments, when viewed from above the light-emitting diode toward the first semiconductor layer 12, a portion of the barrier structure 20 overlaps with the first electrode 21.

[0059] In some embodiments, such as Figure 5 As shown, the groove 18 can also completely penetrate the first semiconductor layer 12, thereby exposing the substrate 10, which is more conducive to reducing the overall operating voltage of the light-emitting diode.

[0060] In some embodiments, such as Figure 6 and Figure 7As shown, the light-emitting diode may further include an insulating layer 24, a first pad 41, and a second pad 42. The insulating layer 24 covers the first electrode 21 and the second electrode 22, and the insulating layer 24 has a first opening 241 and a second opening 242. The material of the insulating layer 24 comprises a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material may include silicone. The dielectric material includes electrically insulating materials such as aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. For example, the insulating layer 24 may be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or a combination thereof, such as a Bragg mirror (DBR) formed by repeatedly stacking two materials with different refractive indices.

[0061] The first pad 41 is electrically connected to the first electrode 21 through the first opening 241. The second pad 42 is electrically connected to the second electrode 22 through the second opening 242. The first pad 41 and the second pad 42 can be metal pads and can be formed together in the same process using the same material, thus having the same layer structure.

[0062] The light-emitting diode may further include a first connecting electrode 31 and a second connecting electrode 32. The first connecting electrode 31 covers the first electrode 21 and is located between the first electrode 21 and the first pad 41. The second connecting electrode 32 covers the second electrode 22 and is located between the second electrode 22 and the second pad 42. The first connecting electrode 31 protects the underlying first electrode 21 and provides support and elevation. Preferably, the first connecting electrode 31 completely covers the first electrode 21 to prevent metal deposition within the first electrode 21, such as preventing Al metal deposition. The material of the first connecting electrode 31 may be selected from one or more of Cr, Pt, Au, Ni, Ti, and Al. Preferably, the surface metal of the first connecting electrode 31 is a Ti metal layer or a Cr metal layer, so that a stable adhesion relationship is formed between the first connecting electrode 31 and the adjacent structural layer. The material of the second connecting electrode 32 may be selected from one or more of Cr, Pt, Au, Ni, Ti, and Al. Preferably, the surface metal of the second connecting electrode 32 is a Ti metal layer or a Cr metal layer, so that a stable adhesion relationship is formed between the second connecting electrode 32 and the adjacent structural layer.

[0063] Please see Figure 8 , Figure 8 This is a top view schematic diagram of the light-emitting diode provided in the third embodiment of the present invention. Compared to Figure 3 The main difference between this embodiment and the light-emitting diode shown in the first embodiment is that: Figure 8As shown, the first electrode 21 located at the edge is a distributed electrode, and part of the baffle structure 20 overlaps with the distributed electrode. By using this distributed electrode, an intermittent ohmic contact can be formed between the first electrode 21 and the first semiconductor layer 12, thereby causing different current expansion directions (e.g., the current only expands laterally between two adjacent first electrodes 21), changing the current flow path and improving the luminous brightness of the light-emitting diode.

[0064] Please see Figure 9A and Figure 9B , Figure 9A This is a top view schematic diagram of the light-emitting diode provided in the fourth embodiment of the present invention. Figure 9B yes Figure 9A A magnified view of region B in the middle. Compared to Figure 3 The main difference between this embodiment and the light-emitting diode shown in the first embodiment is that: Figure 9A As shown, the baffle structure 20 does not protrude from the first electrode 21; that is, the end of the baffle structure 20 near the second semiconductor layer 16 is located within the first electrode 21. This allows the current at the first electrode 21, which is not obscured by the baffle structure 20, to have both lateral and vertical expansion, improving the quality of the light-emitting diode. Viewed from above the light-emitting diode towards the first semiconductor layer 12, a portion of the baffle structure 20 extends from the edge of the first semiconductor layer 12 towards its center, with its end located within the first electrode 21 (i.e., the baffle structure 20 does not protrude from the first electrode 21). The distance S3 from the extended end of the baffle structure 20 to the first electrode 21 ranges from 0.1 to 20 μm, thereby improving the luminous brightness of the light-emitting diode. In one embodiment, the distance S4 from the extended end of the baffle structure 20 to the groove 18 ranges from 0.1 to 12 μm, further improving the luminous brightness of the light-emitting diode.

[0065] Please see Figure 10 , Figure 10 This is a top view schematic diagram of the light-emitting diode provided in the fifth embodiment of the present invention. Compared to Figure 3 The main difference between this embodiment and the light-emitting diode shown in the first embodiment is that: Figure 10As shown, the baffle structure 20 is no longer positioned close to the groove 18, but rather has a predetermined distance L1 between it and the groove 18. Furthermore, at least one groove 18 exists between two adjacent baffle structures 20 located around the periphery of the first semiconductor layer 12. This reduces the height difference between the first electrode 21 and the second electrode 22, facilitating metal stripping. It can also act as a light guide, providing a reflective effect and improving the light emission performance of the LED. Simultaneously, no ohmic contact is formed between the baffle structure 20 and the first electrode 21; the current here only spreads laterally through the first electrode 21, effectively blocking current and improving current diffusion. Preferably, to avoid the baffle structures 20 being positioned too close together, the predetermined distance L1 can be at least greater than 0.001 μm, further improving the light emission characteristics of the LED.

[0066] The present invention also provides a light-emitting device that employs the light-emitting diode provided in any of the above embodiments. The light-emitting diode may be an ultraviolet light-emitting diode, and the resulting light-emitting device has good photoelectric quality.

[0067] In summary, the light-emitting diode and light-emitting device provided in one embodiment of the present invention, through the setting of the baffle structure 20, can reduce the height difference, reduce the die-bonding void ratio, increase the contact points during metal stripping, and facilitate metal stripping; it can also serve as a light guide post to achieve a reflective effect and improve the light emission performance of the light-emitting diode.

[0068] Furthermore, those skilled in the art should understand that although many problems exist in the prior art, each embodiment or technical solution of the present invention can be improved in only one or a few aspects, without necessarily solving all the technical problems listed in the prior art or the background art simultaneously. Those skilled in the art should understand that any content not mentioned in a claim should not be construed as a limitation on that claim.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light-emitting diode, characterized in that: The light-emitting diode includes: The first semiconductor layer has opposing upper and lower surfaces; A light-emitting layer is disposed on the upper surface of the first semiconductor layer; A second semiconductor layer is disposed on the light-emitting layer; The groove extends from the upper surface of the first semiconductor layer to the lower surface of the first semiconductor layer; A baffle structure is disposed on the first semiconductor layer close to the groove; Specifically, when viewed from above the light-emitting diode towards the first semiconductor layer, the first semiconductor layer surrounds at least two sides of the groove, and the baffle structure is independent of the light-emitting layer; when viewed from above the light-emitting diode towards the first semiconductor layer, the baffle structure is disposed around the groove. The obstruction structure is a light guide post, which is used for reflection. The light-emitting diode also includes a first electrode and a second electrode. The first electrode is electrically connected to the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer. Viewed from above the light-emitting diode toward the first semiconductor layer, part of the obstruction structure extends from the edge of the first semiconductor layer toward the center of the first semiconductor layer to protrude from the first electrode. The distance by which the obstruction structure protrudes from the first electrode ranges from 0.1 to 30 μm.

2. The light-emitting diode according to claim 1, characterized in that: The first semiconductor layer includes a doped layer and an undoped layer, the doped layer being located between the undoped layer and the light-emitting layer, and the groove penetrating the doped layer.

3. The light-emitting diode according to claim 1, characterized in that: Viewed from above the light-emitting diode toward the first semiconductor layer, the grooves are distributed at least at the periphery of the first semiconductor layer.

4. The light-emitting diode according to claim 1, characterized in that: The light-emitting diode further includes a substrate disposed on the lower surface of the first semiconductor layer, and the groove penetrates the first semiconductor layer to expose the substrate.

5. The light-emitting diode according to claim 1, characterized in that: The blocking structure includes a first blocking body and a second blocking body. The first blocking body is disposed on the first semiconductor layer, and the second blocking body is disposed on the first blocking body. The material of the first blocking body is the same as that of the light-emitting layer, and the material of the second blocking body is the same as that of the second semiconductor layer.

6. The light-emitting diode according to claim 5, characterized in that: The baffle structure further includes a third baffle, which is located between the first semiconductor layer and the first baffle, and the material of the third baffle is the same as that of the first semiconductor layer.

7. The light-emitting diode according to claim 1, characterized in that: The upper surface of the baffle structure is flush with the upper surface of the second semiconductor layer.

8. The light-emitting diode according to claim 1, characterized in that: The first electrode includes a finger electrode, which is viewed from above the light-emitting diode toward the first semiconductor layer, and a portion of the groove is distributed within the finger electrode.

9. The light-emitting diode according to claim 1, characterized in that: The first electrode is a distributed electrode, and part of the barrier structure overlaps with the distributed electrode.

10. The light-emitting diode according to claim 1, characterized in that: Viewed from above the light-emitting diode toward the first semiconductor layer, a portion of the baffle structure extends from the edge of the first semiconductor layer toward the center of the first semiconductor layer, and the distance from the sidewall of the baffle structure to the groove ranges from 0.1 to 25 μm.

11. A light-emitting diode, characterized in that: The light-emitting diode includes: The first semiconductor layer has opposing upper and lower surfaces; A light-emitting layer is disposed on the upper surface of the first semiconductor layer; A second semiconductor layer is disposed on the light-emitting layer; The groove extends from the upper surface of the first semiconductor layer to the lower surface of the first semiconductor layer; A barrier structure is disposed on the first semiconductor layer; In this configuration, viewed from above the light-emitting diode toward the first semiconductor layer, the first semiconductor layer surrounds at least two sides of the groove. The baffle structure is independent of the light-emitting layer. There are multiple baffle structures. The groove exists between two adjacent baffle structures. There is a preset distance between the baffle structure and the groove. The obstruction structure is a light guide post, which is used for reflection. The light-emitting diode also includes a first electrode and a second electrode. The first electrode is electrically connected to the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer. Viewed from above the light-emitting diode toward the first semiconductor layer, part of the obstruction structure extends from the edge of the first semiconductor layer toward the center of the first semiconductor layer to protrude from the first electrode. The distance by which the obstruction structure protrudes from the first electrode ranges from 0.1 to 30 μm.

12. The light-emitting diode according to claim 11, characterized in that: Viewed from above the light-emitting diode toward the first semiconductor layer, the grooves are distributed at least at the periphery of the first semiconductor layer.

13. The light-emitting diode according to claim 11, characterized in that: The blocking structure includes a first blocking body and a second blocking body. The first blocking body is disposed on the first semiconductor layer, and the second blocking body is disposed on the first blocking body. The first blocking body is the same as the light-emitting layer, and the second blocking body is the same as the second semiconductor layer.

14. The light-emitting diode according to claim 11, characterized in that: The upper surface of the baffle structure is flush with the upper surface of the second semiconductor layer.

15. A light-emitting device, characterized in that: The light-emitting device is a light-emitting diode as described in any one of claims 1 to 14.

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