Magnetic element and integrated device
By using a wiring layer structure with alternating crystalline and amorphous materials in the magnetoresistive effect element, and utilizing the spin Hall effect to generate spin current, the high power consumption problem in the prior art is solved, and a low power consumption magnetoresistive effect element is realized.
CN116157863BActive Publication Date: 2026-06-09TDK CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TDK CORP
- Filing Date
- 2021-07-30
- Publication Date
- 2026-06-09
AI Technical Summary
Technical Problem
Existing magnetoresistive devices require a high critical current density when recording data, which leads to increased power consumption.
Method used
A wiring layer structure alternating between crystalline and amorphous materials is adopted, and a spin current is generated through the spin Hall effect to reduce the critical current density. This includes using a crystalline first layer with low resistivity and an amorphous second layer in the wiring layer, and setting a flat interface between the first ferromagnetic layer and the nonmagnetic layer.
Benefits of technology
This effectively reduces the power consumption of magnetoresistive components, decreases the deviation of critical current density, and improves the reliability and stability of the components.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN116157863B_ABST
Abstract
The magnetic element of the present embodiment includes a wiring layer and a first ferromagnetic layer in contact with the wiring layer, and the wiring layer includes a first layer of a crystal phase and a second layer of an amorphous phase between the first ferromagnetic layer and the first layer.
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