Apparatus and method for particle beam analysis and / or processing of a sample

Abstract

An apparatus (100) is proposed for analyzing and / or processing a sample (10) using a particle beam (110), comprising a providing unit (106) for providing the particle beam (110), a shielding element (202) for shielding an electric field (E) generated by an electric charge (Q) accumulated on the sample (10), wherein the shielding element (202) has a through-hole (206) for the particle beam (110) to pass through and to be directed towards the sample (10), a detecting unit (112) configured to detect an actual position of the shielding element (202), and an adjusting unit (600) for adjusting the shielding element (202) from the actual position to a target position.

Description

[0001] The contents of priority application DE 10 2020 124 307.3 are incorporated herein by reference in their entirety. Technical Field

[0002] This invention relates to apparatus and methods for using particle beams to analyze and / or process samples. Background Technology

[0003] Microlithography is used to produce microstructured components, such as integrated circuits. Microlithography processes are performed using a lithography apparatus equipped with an illumination system and a projection system. In this case, the image of a mask (mask reticle) illuminated by the illumination system is projected onto a substrate (e.g., a silicon wafer) via the projection system. The substrate is coated with a photosensitive layer (photoresist) and positioned within the image plane of the projection system to transfer the mask structure onto the photosensitive coating of the substrate.

[0004] Masks, or photolithographic masks, are used for extensive exposures, so it is crucial that they are free of defects. Consequently, a significant effort is made to inspect photolithographic masks for defects and repair those identified. Defects in photolithographic masks can be on the order of several nanometers. Repairing such defects requires apparatus that provides very high spatial resolution for the repair process.

[0005] Suitable devices for this purpose are based on particle beam-induced processes to activate local etching or deposition processes.

[0006] EP 1 587 128 B1 discloses an apparatus that uses a beam of charged particles (“particle beam”), particularly an electron beam from an electron microscope, to initiate a chemical process. If the sample is non-conductive or has only poor conductivity, the use of charged particles can induce sample charging. This can lead to uncontrolled beam deflection, thus limiting the achievable process resolution. Therefore, it is proposed to configure the shielding element very close to the processing location to minimize sample charging and improve process resolution and control.

[0007] Specifically, electron microscopes are known to contain a shielding element in the form of a metallic shield, located, for example, 70–80 μm above a mask. The shielding element typically has openings, such as circular, rectangular, or hexagonal meshes, and is held in the desired position by a holder. The holder is an integral part of the assembly, integrating an electrostatic deflection system and a gas supply. The particle beam is intended to be guided along the optical axis of the electron microscope through specific openings in the shielding element. Up to this point, this required complex adjustments to the shielding element, first creating a vacuum, detecting the position of the shielding element with the electron microscope, and then manually shifting the holder and mesh after breaking the vacuum. This process was repeated until the corresponding openings were in the correct positions. Summary of the Invention

[0008] In this context, one object of the present invention is to provide an improved apparatus for analyzing and / or processing samples using particle beams, as well as an improved method.

[0009] According to the first aspect, an apparatus for analyzing and / or processing samples using a particle beam is proposed. The apparatus comprises:

[0010] Provides a unit for providing a particle beam;

[0011] A shielding element for shielding the electric field generated by the charge accumulated on the sample, wherein the shielding element has a through hole for the particle beam to pass through and be directed toward the sample;

[0012] The detection unit is configured to detect the actual position of the shielding element; and

[0013] The adjustment unit is used to adjust the shielding element from its actual position to its target position.

[0014] The advantage of this device is that the position of the shielding element can be adjusted partially or completely automatically by means of the adjustment unit. In particular, manual adjustment is thus avoided. The vacuum no longer needs to be broken. It is especially advantageous that the position of the shielding element can be observed by means of a detection unit throughout or part of the adjustment process. As a result, the iterative process known in the prior art is better avoided.

[0015] For example, the sample is a photolithographic mask with feature dimensions in the range of 10 nm to 10 µm. This could be a transmissive photolithographic mask for DUV lithography (DUV: "deep ultraviolet light," operating wavelength in the range of 30–250 nm) or a reflective photolithographic mask for EUV lithography (EUV: "extreme ultraviolet light," operating wavelength in the range of 1–30 nm). Analysis specifically involves acquiring images of the sample surface with the aid of a particle beam. Processes performed with the aid of a particle beam include, for example, etching processes that locally remove material from the sample surface, deposition processes that locally apply material to the sample surface, and / or similar localized activation processes, such as forming a passivation layer or a compaction layer.

[0016] The particle beam contains charged particles, such as ions, electrons, or positrons. The providing unit is, for example, an electron column, which can provide an electron beam with an energy range of 10 eV – 10 keV and a current range of 1 µA – 1 pA. However, it can also be an ion source providing an ion beam. The particle beam is preferably focused on the surface of the sample, for example, reaching an irradiation area with a diameter in the range of 1 nm – 100 nm. The particle beam, composed of charged particles, can be influenced by electric and magnetic fields, i.e., accelerated, oriented, shaped, and / or focused, for example. For this purpose, the providing unit may include multiple elements configured to generate the corresponding electric and / or magnetic fields. These elements are specifically arranged between the beam generating unit and the shielding element.

[0017] The shielding element fulfills the task of shielding the electric field of the charge accumulated on the sample, that is, spatially defining the electric field, particularly to the minimum possible gap between the shielding element and the sample. For this purpose, the shielding element comprises a conductive material. For example, the shielding element comprises a noble metal. For instance, the shielding element comprises at least one element from the list containing gold, nickel, palladium, platinum, and iridium. In a specific embodiment, the shielding element is formed of gold. For example, the shielding element is grounded so that the charge striking the shielding element is dissipated. In the spatial region above the shielding element (from which the particle beam originates), the electric field of the charge on the sample is effectively shielded by the shielding element.

[0018] The shielding element itself can be implemented in a sheet-like manner, preferably forming a three-dimensional shape, with a raised portion on its surface in the direction of the sample stage for holding the sample. The raised portion is preferably formed closest to the sample stage, i.e., the distance between the sample stage or sample and the shielding element is minimized in the region of the raised portion. The raised portion extends, for example, at least 100 µm, preferably at least 250 µm, and preferably at least 500 µm in the direction toward the sample stage. Preferably, the difference between the distance between the nearest point of the shielding element and the sample stage and the distance between the farthest point of the shielding element and the sample stage is at least 100 µm, preferably at least 250 µm, and preferably at least 500 µm. Within the raised portion, the shielding element may have a through-hole through which the particle beam passes and is incident on the sample. The shielding element may be configured near an opening of the supply unit through which the particle beam is guided to a processing position on the sample, and / or the shielding element forms a component of the supply unit closest to the sample stage in the beam direction.

[0019] For example, when using particle beams to analyze or process samples, the distance between the shielding element (especially its protrusions) and the sample is at most 100 µm, preferably at most 50 µm, more preferably at most 25 µm, and even more preferably at most 10 µm. The smaller the distance, the less influence the electrical interference field has on the particle beam.

[0020] Therefore, particle beams can be precisely controlled and are less affected by random and / or uncontrollable disturbances. Thus, high resolution is possible during image acquisition (such as in scanning electron microscopy) and during processing methods performed using particle beams (e.g., particle beam-induced etching or deposition processes, ion implantation, and / or advanced structural modification processes).

[0021] The shielding element has a length and width, for example, in the range of 1 mm to 50 mm. The material thickness of the shielding element is, for example, in the range of 1 µm to 100 µm, preferably 5 µm to 15 µm. The cross-sectional area of ​​the through-hole is, for example, 100 µm². 2 – 2500 µm 2 Between, preferably at 400 µm 2 – 1600 µm 2 Between, preferably at 750 µm 2 – 1400 µm 2 The through-hole has a diameter, for example, ranging from 10 µm to 50 µm, preferably from 20 µm to 40 µm, and more preferably from 25 µm to 35 µm. The diameter, for example, refers to the distance between two oppositely positioned points of the through-hole.

[0022] Any type of sensor is suitable as the detection unit. In particular, electron microscopes are relevant, as described below. Alternatively, the sensor can be an optical, inductive, or capacitive sensor. Preferably, the detection unit detects the actual position before adjustment and the new actual position after adjustment (which corresponds to the target position of the shielding element, or an intermediate position between the actual and target positions). The detection unit can be configured to sample the corresponding actual position of the shielding element at a sampling rate, for example, greater than 1, greater than 10, or greater than 100 Hz. In various cases, the actual and / or target positions can be detected relative to the optical axis of the unit.

[0023] The adjustment unit may include one or more motors or actuators. The motors may be electric motors, and the actuators may be electromagnetic actuators.

[0024] In particular, closed-loop control can be provided by adjusting the shielding element according to its actual position (at the corresponding sampling time, if appropriate).

[0025] Furthermore, the apparatus may include a gas supplier configured to supply processing gas into a gap formed by a sample and a shielding element disposed on a sample stage. The processing gas flows through the gap to a processing position on the sample. The supply unit includes, for example, a circulation plate containing openings for the particle beam. For instance, the gas supplier is implemented via a circulation plate.

[0026] Suitable process gases for deposition materials or for growing elevated structures that interact with particle beams, particularly alkyl compounds of main group elements, metals, or transition elements. Examples include cyclopentadienyltrimethylplatinum CpPtMe3 (Me=CH4), methyl-cyclopentadienyltrimethylplatinum MeCpPtMe3, tetramethyltin SnMe4, trimethylgallium GaMe3, ferrocene Cp2Fe, diarylchromium Ar2Cr, and / or carbonyl compounds of main group elements, metals, or transition elements (e.g., hexacarbonylchromium Cr(CO)6, hexacarbonylmolybdenum Mo(CO)6, hexacarbonyltungsten W(CO)6, octacarbonyldicobalt Co2(CO)8, dodecacarbonyltriruthenium Ru3(CO)12, pentacarbonyliron Fe(CO)5), and / or alkoxy compounds of main group elements, metals, or transition elements (e.g., tetraethyl orthosilicate Si(OC2H5)). 4. Tetraisopropoxytitanium (Ti(OC3H7)4), and / or halide compounds of main group elements, metals, or transition elements (e.g., tungsten hexafluoride (WF6), tungsten hexachloride (WCl6), titanium tetrachloride (TiCl4), boron trifluoride (BF3), silicon tetrachloride (SiCl4), and / or complexes containing main group elements, metals, or transition elements (e.g., bis(hexafluoroacetylacetone)copper (Cu(C5F6HO2)2), trifluoroacetylacetone dimethyl gold (Me2Au(C5F3H4O2)), and / or organic compounds (e.g., carbon dioxide (CO), carbon dioxide (CO2), aliphatic and / or aromatic hydrocarbons, etc.).

[0027] Suitable processing gases for etching materials that interact with particle beams include, for example, xenon difluoride (XeF2), xenon dichloride (XeCl2), xenon tetrachloride (XeCl4), water vapor (H2O), heavy water (D2O), oxygen (O2), ozone (O3), ammonia (NH3), nitrosyl chloride (NOCl), and / or the following halides: XNO, XONO2, X2O, XO2, X2O2, X2O4, X2O6, where X is a halide. The applicant's U.S. Patent Application No. 13 / 0103281 details other processing gases for etching materials.

[0028] For example, additive gases that can be mixed in proportion with the processing gas to better control the processing include: oxidizing gases (e.g., hydrogen peroxide H₂O₂, nitrous oxide N₂O, nitrogen oxide NO, nitrogen dioxide NO₂, nitric acid HNO₃, and other oxygen-containing gases), and / or halides (e.g., chlorine Cl₂, hydrogen chloride HCl, hydrogen fluoride HF, iodine I₂, hydrogen iodide HI, bromine Br₂, hydrogen bromide HBr, phosphorus trichloride PCl₃, phosphorus pentachloride PCl₅, phosphorus trifluoride PF₃, and other halogen-containing gases), and / or reducing gases (e.g., hydrogen H₂, ammonia NH₃, methane CH₄, and other hydrogen-containing gases). These additive gases can be used, for example, in etching processes, as buffer gases, as passivation media, etc.

[0029] In a specific embodiment, adjustments to the shielding element and / or retainer (explained in more detail later) alter the supply of processing gas relative to the processing location.

[0030] According to a specific embodiment, the device includes a vacuum housing for providing a vacuum therein, wherein at least a shielding element and an adjustment unit are disposed within the vacuum housing.

[0031] This provides a simple solution where the vacuum does not need to be broken to adjust the position of the shielding components. In the presence of a vacuum—especially without a handling gas—the residual gas pressure in the vacuum enclosure is preferably 2 x 10⁻⁶. -07 and 4x10 -07 Between millibars, preferably 3 x 10 -07 millibar.

[0032] The apparatus preferably includes a sample stage for holding a sample. Preferably, the sample stage is disposed within a vacuum housing. The apparatus includes, for example, a positioning unit for positioning the sample stage relative to a providing unit. The positioning unit may be configured to, for example, shift the sample stage along three spatial axes. Furthermore, the positioning unit may be configured to rotate the sample stage about at least one, preferably at least two, of these axes. The sample stage is preferably held by a holding structure in a vibration-decoupled manner and / or in an actively damped manner.

[0033] According to a specific embodiment, the detection unit includes an electron microscope, particularly a scanning electron microscope.

[0034] This allows for accurate detection of the location of shielding elements, especially the location of through-holes. Advantageously, the apparatus provided for analyzing and / or processing samples also utilizes a detection unit as a means of detecting the location of shielding elements.

[0035] According to a specific embodiment, a fixing device for fixing a shielding element by friction locking is provided, wherein the adjusting unit is configured to move the shielding element from its actual position to its target position while overcoming friction locking.

[0036] The fixing device may be disposed on the supply unit, particularly at its lower end. The fixing device may be integrally or integrally implemented with the supply unit. A predetermined force must be used to overcome frictional locking. Specifically, the fixing device may include one or more clamps, through which the shielding element or a retainer holding the shielding element is clamped against a friction surface (also referred to herein as the "reverse retainer surface"). The clamping force generates a frictional force perpendicular to it, which counteracts displacement of the shielding element or its retainer along the friction surface. The friction surface may be, in particular, the end surface facing the sample stage and / or the downward-facing supply unit.

[0037] According to another specific embodiment, the adjustment unit can be operatively connected to the shielding element.

[0038] The operative connection allows the adjustment unit to act on the shielding element indirectly or directly. Furthermore, it can be configured to be permanent or detachable. The operative connection can be provided, in particular, mechanically and / or electromagnetically. Specifically, for adjustment purposes, the adjustment unit can be detachably connected to or may be connected to the shielding element or a retainer for holding the shielding element.

[0039] According to another specific embodiment, the device includes a joining element and a receiving element that can be detachably joined to each other to provide an operational connection, wherein the adjustment unit includes elements of the joining element and the receiving element, and the shielding element or a retainer for holding the shielding element includes corresponding other elements of the joining element and the receiving element.

[0040] The engaging element and the receiving element form a detachably connected positive locking fit. This allows for a particularly simple operative connection. Preferably, the positive locking fit is created by moving the engaging element vertically to the receiving element.

[0041] According to another specific embodiment, the engaging element is implemented as a pin and / or the receiving element is implemented as a hole, particularly as a hole in a shielding element or retainer.

[0042] Specifically, the pin moves along its longitudinal axis to engage in the hole in a positive locking manner. The pin may have a cylindrical outer profile, while the hole may have a corresponding circular inner profile.

[0043] According to another specific embodiment, the device includes a force transmission element for providing an operative connection between an adjustment unit and a shielding element, wherein the mechanical stability of the force transmission element is selected such that force transmission along the operative connection is limited to a predetermined scale, wherein the force transmission element has, in particular, a predetermined break point and / or a coupling element forming the force transmission element.

[0044] This makes it possible to ensure that the adjusting unit can shift the shielding element within a predetermined range; on the other hand, it limits the application of force to other parts of the device when the limit of this range (especially as predefined by the stop) is reached and there is therefore a threat of damage to other parts of the device.

[0045] According to another specific embodiment, an additional detection unit is provided, configured to detect the position of the bonding element relative to the receiving element.

[0046] Therefore, the joining process can be carried out in a controlled manner, thereby enabling the process to be completed more quickly and / or without causing potential damage to other parts of the device.

[0047] According to another specific embodiment, the detection unit further includes a camera and / or records images by means of a deflecting mirror.

[0048] Therefore, the connecting elements can be observed particularly easily.

[0049] According to another specific embodiment, the engaging element protrudes from the deflector. Alternatively, the receiving element may also be shaped as a deflector or be permeable to a deflector.

[0050] As a result, the bonding element can be introduced into the receiving element particularly easily, because the outer contour of the bonding element and the inner contour of the receiving element can be observed by means of a deflecting mirror.

[0051] According to another specific embodiment, the adjustment unit has a sample stage and / or sample for holding the sample.

[0052] Advantageously, the provided sample stage is also used as an adjustment unit, meaning the sample stage acts directly or indirectly on the shielding element. Alternatively, it is also possible to use a special sample (so-called a service sample) that moves via the sample stage, where the sample acts directly or indirectly on the shielding element. In particular, the engaging or receiving element is fixedly mounted on the sample stage or the sample.

[0053] According to a further specific embodiment, the unit configuration is adjusted to shift the shielding element in a direction that is transverse to the optical axis of the providing unit.

[0054] In principle, adjusting the actual position to the target position can involve positioning the shielding element in up to six degrees of freedom (three rotations and three translations). However, preferably, only a mechanically easily achievable lateral displacement of the shielding element relative to the optical axis of the providing unit is provided.

[0055] According to another specific embodiment, a circulation plate for providing processed gas is provided, wherein the shielding element is detachably fixed to the circulation plate with respect to its actual position and its target position.

[0056] In particular, the circulation plate may include a fixing device for removably securing the shielding element or its retainer.

[0057] According to a second aspect, a method is provided for positioning a shielding element in an apparatus that uses a particle beam to analyze and / or process samples. The method includes the following steps:

[0058] The shielding components are installed inside the vacuum housing of the device;

[0059] A vacuum is created inside the vacuum enclosure;

[0060] Detect the actual location of the shielding element; and

[0061] Adjust the shielding element from its actual position to the target position in the presence of a vacuum.

[0062] Advantageously, the vacuum is not broken during steps c) and d). Adjustment costs are thus significantly reduced. The apparatus can be particularly suitable for the apparatus according to the first aspect. These steps do not necessarily have to be performed in the order shown in a)–d). For example, step c) can be performed before step b).

[0063] Further possible embodiments of the present invention may include combinations of features or specific embodiments not explicitly mentioned in the foregoing or hereinafter with respect to exemplary embodiments. In such cases, those skilled in the art will also add individual aspects as improvements or supplements to the various basic forms of the invention. Attached Figure Description

[0064] Other advantageous configurations and aspects of the invention are the objectives of the appended claims and the exemplary embodiments of the invention described below. Hereinafter, the invention will be explained in more detail based on preferred embodiments with reference to the accompanying drawings.

[0065] Figure 1 A schematic diagram of a first exemplary embodiment of a device for analyzing and / or processing samples using a particle beam is shown.

[0066] Figure 2 An excerpt of a schematic diagram of a second exemplary embodiment of a device for analyzing and / or processing samples using a particle beam is shown;

[0067] Figure 3 An exemplary specific embodiment of the shielding element is shown in a plan view;

[0068] Figure 4 A perspective view of several components of a third exemplary embodiment of a device for analyzing and / or processing samples using a particle beam is shown;

[0069] Figure 5It shows the state of being installed in the device. Figure 4 Components in;

[0070] Figure 6 Showing Figure 5 The device and the camera pointing at the deflecting mirror are used to illustrate specific embodiments of the advancement;

[0071] Figure 7 a) and b) exemplarily show in Figure 5 In the case of the device, the shielding element is located at different positions; and

[0072] Figure 8 The flowchart illustrates several method steps according to a specific embodiment.

[0073] Unless otherwise specified, identical or functionally equivalent elements have the same element symbols in the accompanying drawings. It should also be noted that the schematic diagrams in the figures are not necessarily drawn to scale. Detailed Implementation

[0074] Figure 1 A schematic diagram of a first exemplary embodiment of an apparatus 100 for analyzing and processing sample 10 is shown. The apparatus 100 includes a vacuum housing 102, the interior of which is maintained at a specific vacuum by means of a vacuum pump 104.

[0075] Specifically, the apparatus 100 is configured for analyzing and processing sample 10, which is particularly in the form of a photolithographic mask. For example, the apparatus is a tool for verifying and / or repairing photolithographic masks, particularly for EUV (Extreme Ultraviolet) or DUV (Deep Ultraviolet) lithography masks. In this case, the sample 10 to be analyzed or processed is mounted on a sample stage 11 within a vacuum housing 102. Specifically, the sample stage 11 of the apparatus 100 is configured to position the sample 10 with precision down to the nanometers via three spatial directions and three rotational axes.

[0076] The apparatus 100 also includes a supply unit 106 in the form of an electron column. The supply unit 106 includes an electron source 108 for supplying an electron beam 110 (particle beam) and an electron microscope 112 for detecting electrons backscattered from the sample 10. An ion beam may also be provided instead of the electron beam 110. An additional detector (not shown) for secondary electrons may also be provided. The electron column 106 preferably has a dedicated vacuum enclosure 113 within a vacuum enclosure 102. For example, the vacuum enclosure 113 is evacuated to 10... -7 mbar - 10 -8 The residual gas pressure is mbar. An electron beam 110 from electron source 108 passes through this vacuum until it exits from the bottom side of vacuum housing 113 and then strikes the sample 10.

[0077] The electron column 106 can interact with the supplied process gas to perform an electron beam induced processing (EBIP) process, wherein the process gas is supplied from the outside via a gas line 116 to the focal region of the electron beam 110 on the sample 10 by a gas supply unit 114. Specifically, this includes depositing material on and / or etching material from the sample 10. The apparatus 100 also includes a control computer 118, which appropriately controls the electron column 106, the sample stage 11, and / or the gas supply unit 114.

[0078] Figure 2 This is an excerpt of a schematic diagram of a second exemplary embodiment of an apparatus 100 for analyzing and / or processing sample 10 using particle beam 110. Unless otherwise stated below, Figure 2 The device 100 in the middle may have the same Figure 1 It has the same features as the device 100 in the middle.

[0079] An opening 200 for the electron beam 110 is disposed on the bottom side of the vacuum housing 113. The opening 200 is partially or completely closed by a shielding element 202. The shielding element 202 is implemented in a sheet-like manner and comprises a conductive material, particularly gold. The shielding element 202 may have a protrusion 204 that protrudes relative to the sample stage 11. The protrusion 204 is curved in the direction of the sample stage 11. The protrusion 204 (or, if such a portion is not present, the shielding element 202 is generally present) has a through-hole 206 for the electron beam 110 to pass through. The distance between the shielding element 202 and the sample stage 11 is preferably minimized in the region of the through-hole 206. During operation of the apparatus 100 (analysis / processing of the sample 10), the distance between the through-hole 206 and the sample 10 is preferably between 1 μm and 100 μm, preferably between 5 μm and 30 μm, and more preferably 10 μm.

[0080] The shielding element 202 is configured to shield the electric field E. To illustrate this, in Figure 2 The charge Q that generates the electric field E is shown by way of example. The charge Q is shown below the shielding element 202, in the region where the processing area 208 of the sample 10 is located during the use of the device 100. In particular, when the sample 10 is non-conductive or only slightly conductive (at least partially), when the electron beam 110 is incident on the sample 10, the sample 10 is charged and thus an electric field E is formed. Figure 1 The negative charge Q generated due to the incident electron beam 110 is shown as an example.

[0081] Due to the shielding effect of the electric field E, firstly, the accuracy of the impact point and focal position of the electron beam 110 on the sample 10 is improved, which enhances resolution and process control. Secondly, the flight trajectories of backscattered electrons and secondary electrons flying in the opposite direction to the electron beam 110 in the direction of the electron source 108 are less affected, which also improves resolution and process control and further enhances sensitivity.

[0082] In this example, the supply unit 106 includes a gas supplier 210 configured to supply processing gas PG into the gap 212 between the shielding element 202 and the sample 10. The processing gas PG flows along the gap 212 and thus reaches the processing position 208 on the sample 10. Therefore, by means of the gas supplier 210, it is first ensured that the processing position 208 is adequately supplied with processing gas PG, and secondly, it is ensured that the volumetric flow rate of processing gas PG entering the supply unit 106 through the through-hole 206 is relatively low, particularly lower than if the processing gas PG were guided to the processing position 208 from above through the through-hole 206.

[0083] Figure 3 An example of a shielding element 202 with multiple through-holes 206 is shown; for clarity, only one is identified by the element symbol. The through-holes 206 here all have a hexagonal geometry. In this example, the multiple through-holes 206 are also located in the protrusions 204, at least partially in each case.

[0084] Figure 4 A perspective view shows several components of a third exemplary embodiment of an apparatus 100 for analyzing and / or processing sample 10 using particle beam 110. Figure 5 The component is shown as being installed in device 100. Figure 6 Showing Figure 5 The device 100 and the camera are included. Unless otherwise stated below, Figures 4 to 6 The device 100 in the middle may have the same Figure 1 and Figure 2 The shielding element 202 has the same features as the device 100 in the middle. Figure 3 Implementation as shown.

[0085] Figure 4 The shielding element 202 is held by the retainer 300. For this purpose, the shielding element 202 can be fixed to the retainer 300, particularly to its ring 302, which is only partially concealed. For example, fusion welding, soldering, or adhesive bonding are suitable methods of fixation. Alternatively, the shielding element 202 can be integrated into the retainer 300, that is, it can be specifically formed with the retainer body.

[0086] According to an exemplary embodiment, the retainer 300 has an opening 200 (shown in a concealed manner because it is behind the shielding element 202), which is closed by the shielding element 202. The opening 200 may be specifically formed within the ring 302.

[0087] The retainer 300 may further include a gas supply 210, specifically in the form of an opening or hole 304. Four holes 304 are provided in the example, wherein the number of holes can be varied, particularly between 2 and 6. The process gas PG is supplied via the holes 304 (see [link to example]). Figure 2 Supply to processing location 208 (see Figure 2 The hole 304 may be formed by a web 306, wherein the web 306 connects the ring 302 to a portion 308 of the retainer 300. The retainer 300 may be made of metal, alloy or plastic.

[0088] The retainer 300 is clamped in a friction-locking manner with the aid of one or more clamps 310 – two such clamps 310 are provided here. The clamping force can be applied, in particular, to portion 308. For example, the clamps 310 may have arms 312 acting on the retainer 300 or portion 308. A portion of the electron column 106 can act as (very generally) a reverse retainer surface 314, which is used to create a clamping effect with the clamps 310 or their arms 312. In particular, the underside of the vacuum housing 113 acts as the reverse retainer surface 314. In an exemplary embodiment, a plate (particularly a circulation plate 316) fixed to or attached to the underside region of the vacuum housing 113 has a reverse retainer surface 314. The circulation plate 316 has a connector 500 for handling gas PG (one such connection is shown by way of example), which also... Figure 5 As shown in the figure, Figure 5 The circulation plate 316 is shown in a simplified manner. Via the channel 210 formed in the circulation plate 316 (see...) Figure 2 The connector 500 is configured to selectively supply the processing gas PG to the processing area 208 through the hole 304.

[0089] Alternatively or additionally, the circulation plate 316 (or plate) may have a beam deflection device 216 fixed thereto or integrated therein (see Figure 2 With the aid of beam deflection device 216, electron beam 110 is deflected to process processing region 208. Beam deflection device 216 comprises multiple (e.g., between four and sixteen, preferably six to ten, particularly eight (hence the beam deflection device 216 is also called an octet)) coils or electromagnets (not shown as they are concealed) arranged around the optical axis 214 of electron column 106. Current connection 318 ( Figure 4 The example shows one of them providing current to the electromagnet.

[0090] The retainer 300 is configured together with the shielding element 202 so that it is adjustable, i.e., movable, between its actual position and target position. In this case, Figure 4 The actual position is displayed. The actual position is detected by a detection unit, which, according to an exemplary embodiment, is formed by an electron microscope 112, particularly a scanning electron microscope. This microscope detects electrons backscattered from the shielding element 202. The corresponding detection image is shown below. Figure 7 As shown in Figure a, where 206 represents a through-hole intended to be positioned relative to the optical axis 214 of the electron column 106. The optical axis 214 and... Figure 1 and Figure 2 The electron beam 110 is displayed collinearly. The optical axis 214 therefore extends in the vertical direction and intersects the center point of the opening 200.

[0091] Positioning of the retainer 300 or shielding element 202 in all six degrees of freedom is conceivable in principle. According to an exemplary embodiment, positioning occurs only in a plane perpendicular to the optical axis 214, that is, in this case, in the horizontal direction. Figure 4 (xy plane). In this case, the reverse retainer surface 314 serves as a sliding or supporting surface, guiding the horizontal displacement of the retainer 300. For sliding motion, the frictional force acting between the retainer 300 and the reverse retainer surface 314 must be overcome. The frictional force can be set by means of screws 320 that hold the clamp 310 on the reverse retainer surface 314. The reverse retainer surface 314 can be recessed into the circulation plate 316, as shown, thereby creating an edge 322. The edge 322 defines the displacement movement of the retainer 300 in the xy plane, that is, forms the end stop of the retainer. A receiving element is provided in the retainer 300 in the form of a hole 324 in a protrusion 326 integrally formed on the retainer 300. The hole plane is also arranged in the xy plane.

[0092] exist Figure 6 The adjustment unit 600 shown (also partially shown in) Figure 5 With the assistance of ( ), the adjustment of the retainer 300 and the shielding element 202 is achieved. According to an exemplary embodiment, the adjustment unit 600 includes a sample stage 11, wherein an engagement element 602 is fixed to the sample stage 11, the engagement element 602 being specifically implemented here as a pin projecting vertically upward. The pin 602 may also be alternatively mounted on a sample 10 (so-called service sample) specifically provided for this purpose, which is temporarily (i.e., only during adjustment) positioned on the sample stage 11.

[0093] In an exemplary embodiment, pin 602 is located at deflector 502 (see...). Figure 5The deflector 502 is tilted relative to the optical axis 214. For this purpose, the deflector can be implemented, for example, on a block 504, which is shaped to form a wedge or prism. The block 504 is then fixed to the sample stage 11 or the sample 10.

[0094] like Figure 6 As shown, a detection unit 606, in the form of a camera, is arranged horizontally outside the gap 604 between the sample stage 11 and the electron column 106. Using the camera 606 and the deflecting mirror 502, it is possible to observe the position of the pin 602 relative to the hole 324 on the protrusion 326 of the retainer 300, such as... Figure 6 As indicated by the arrow in the diagram. Next, for example, in control computer 118 (see...) Figure 1 With the assistance of [unclear], the sample stage 11 is properly controlled to insert the pin 602 vertically into the hole 324. Then, the pin 602 moves horizontally via the sample stage 11, and once a predetermined frictional force value is exceeded, this simultaneously causes the retainer 300 and the shielding element 202 to move. Therefore, the retainer 300 and the shielding element 202 are displaced, and the through-hole 206 in the shielding element 202 is brought into play. Figure 7 The target location is shown in b.

[0095] To prevent damage within the device 100, particularly to the retainer 300 or the shielding element 202, a predetermined break point 506 (see [reference needed]) can be provided by means of a pin 602, for example, in case of improper movement. Figure 5 If a force exceeding a predetermined force limit is applied to the pin, particularly its free tip, the pin 602 will break at the predetermined breakage point. Specifically, if the retainer 300 is pressed against edge 322 by the pin 602 (see... Figure 3 This situation will occur when the force consumed exceeds the predetermined force limit.

[0096] Figure 8 A flowchart illustrates several method steps according to a specific embodiment.

[0097] First, when a new generating device 100 is installed, or when the shielding element 202 is replaced (selectively together with the bracket 300), the new shielding element 202 is installed on the reverse retainer surface 314. Figure 8Step S1 in the process. This is accomplished with the help of tightening the clamp 310 and screw 320. At this time, the vacuum housing 102 is open, meaning that the vacuum in the vacuum housing 102 has been broken. The installation of the retainer 300 and the shielding element 202 can be performed with the circulation plate 316 removed from the vacuum housing 102, that is, after the mounting bracket 300 is installed, the circulation plate is brought back into the vacuum housing 102 and installed on the electron column 106. Alternatively, the retainer 300 and the shielding element 202 are installed together in the vacuum housing 102, that is, on the circulation plate 316 that has already been installed on the electron column 106.

[0098] The vacuum in the vacuum housing 102 is then re-established with the aid of the vacuum pump 104 (step S2). As a result, the holder 300, shielding element 202, and sample stage 11 are in a vacuum.

[0099] Step S3 regarding electron microscope 112 (see Figure 1 With the help of ), the actual position of the shielding element 202 (especially the through hole 206) relative to the optical axis 214 is detected.

[0100] Based on the target position of the shielding element 202, which is provided to or calculated by the control computer 118, in step S4, the control computer or some other computer unit determines the travel path along which the sample stage 11 is intended to move to properly move the shielding element 202 with the aid of the pin 602. Then, the sample stage 11 or the pin 602 moves accordingly (step S5). In other words, the pin 602 first engages with the hole 324 by its vertical movement and selective horizontal movement. Next, the pin 602 moves horizontally to displace the shielding element 202 in the xy-plane and bring it from its actual position to the target position. The current actual position is continuously sampled by the electron microscope 112, for example, at a sampling rate of 100 Hz. Once the target position is reached, the pin 602 and the hole 324 disengage again. Specifically, the engagement and disengagement of pin 602 and hole 324 are monitored by camera 606, wherein in a specific embodiment, camera 606 transmits the corresponding measurement data to control computer 118, so that the movement of sample stage 11 can be carried out under closed-loop control.

[0101] The sample stage 11 can then be moved to a different position (step S6), where the block 504 and pin 602 are removed together. This can be optionally achieved using an automatic tool changer.

[0102] Then - step S6 is selectively omitted - in step S7, processing begins in region 208 ( Figure 2 The analysis and / or processing of sample 10 in the sample can selectively avoid disrupting the vacuum provided in step S2.

[0103] Although the invention has been described based on exemplary embodiments, it can be modified in many ways.

[0104] Figure Labels

[0105] 10 samples

[0106] 11 Sample Stage

[0107] 100 devices

[0108] 102 Vacuum Enclosure

[0109] 104 vacuum pump

[0110] 106 electron columns

[0111] 108 Electronic Source

[0112] 110 electron beam

[0113] 112 Electron Microscope

[0114] 113 Vacuum Enclosure

[0115] 114 Gas Supply Unit

[0116] 116 Gas Pipeline

[0117] 118 Control Computer

[0118] 200 opening

[0119] 202 shielding components

[0120] 204 raised portion

[0121] 206 through hole

[0122] 208 processing area

[0123] 210 gas supply unit

[0124] 212 gap

[0125] 214 optical axes

[0126] 216 Beam Deflection Device

[0127] 300 retainer

[0128] 302 rings

[0129] 304 holes

[0130] 306 web

[0131] Part 308

[0132] 310 clamp

[0133] 312 arms

[0134] 314 Reverse Retainer Surface

[0135] 316 circulating board

[0136] 318 Current Connection

[0137] 320 screws

[0138] 322 edge

[0139] 324 holes

[0140] 326 bumps

[0141] 500 connectors

[0142] 502 deflector

[0143] 504 block

[0144] 506 Predetermined fracture point

[0145] 600 adjustment unit

[0146] 602 sales

[0147] 604 gap

[0148] 606 camera

[0149] Electric field E

[0150] PG processing gas

[0151] Q charge

[0152] x direction

[0153] y direction

Claims

1. An apparatus (100) for analyzing and / or processing a sample (10) using a particle beam (110), comprising: A providing unit (106) is used to provide the particle beam (110); A shielding element (202) is used to shield the electric field (E) generated by the charge (Q) accumulated on the sample (10) when the shielding element (202) is at most 100µm away from the sample (10), wherein the shielding element (202) has a through hole (206) for the particle beam (110) to pass through and toward the sample (10); The detection unit (112) is configured to detect the actual position of the shielding element (202); An adjustment unit (600) is used to adjust the shielding element (202) from the actual position to the target position; as well as A fixing device (310) is provided for fixing the shielding element by friction locking, wherein the adjusting unit (600) is configured to move the shielding element (202) from the actual position to the target position while overcoming the friction locking. The adjustment unit (600) is configured to shift the shielding element (202) in a direction (x, y) relative to the transverse direction of the particle beam (110).

2. The apparatus of claim 1, comprising a vacuum housing (102) for providing a vacuum within the vacuum housing, wherein at least the shielding element (202) and the adjustment unit (600) are arranged within the vacuum housing (102).

3. The apparatus of claim 2, wherein the detection unit (112) comprises an electron microscope.

4. The apparatus of claim 3, wherein the electron microscope is a scanning electron microscope.

5. The apparatus according to any one of claims 1 to 4, wherein the adjustment unit (600) acts indirectly or directly on the shielding element.

6. The apparatus of any one of claims 1 to 4, further comprising a joining element (602) and a receiving element (324) capable of being detachably joined to each other to provide an operative connection, wherein the adjusting unit (600) comprises one of the joining element (602) and the receiving element (324), and the shielding element (202) or the retainer (300) holding the shielding element (202) comprises the other corresponding element of the joining element (602) and the receiving element (324).

7. The apparatus of claim 6, further comprising the engaging element (602) and the receiving element (324), wherein the engaging element (602) is configured as a pin and the receiving element (324) is configured as a hole.

8. The apparatus of claim 7, wherein the hole is a hole in the shielding element (202) or the retainer (300).

9. The apparatus of claim 6, wherein the engaging element (602) forms a force transmission element for providing the operative connection between the adjusting unit (600) and the shielding element (202), wherein the mechanical stability of the force transmission element is selected such that force transmission along the operative connection is limited to a predetermined scale.

10. The apparatus of claim 6, further comprising a detection unit (606) configured to detect the position of the engagement element (602) relative to the receiving element (324).

11. The apparatus of claim 10, wherein the additional detection unit (606) comprises a camera and / or records images with the assistance of a deflector (502).

12. The apparatus of claim 11, wherein the engaging element (602) protrudes from one of the deflecting mirrors (502).

13. The apparatus of claim 10, wherein the adjustment unit (600) has a sample stage (11) for holding the sample (10) and / or the sample (10).

14. The apparatus of any one of claims 1 to 4, comprising a circulation plate (316) for providing a process gas, wherein the shielding element (202) is detachably attached to the circulation plate (316) at its actual position and target position.

15. A method for positioning a shielding element (202) in an apparatus (100) for analyzing and / or processing a sample (10) using a particle beam (110), wherein the shielding element (202) is used to shield an electric field (E) generated by a charge (Q) accumulated on the sample (10) when the shielding element (202) is at most 100 µm away from the sample (10), wherein the shielding element (202) has a through-hole (206) through which the particle beam (110) passes toward the sample (10), and wherein the method comprises the following steps: a) The shielding element (202) is installed in the vacuum housing (102) of the device (100), wherein the shielding element is fixed by friction locking; b) A vacuum is generated in the vacuum housing (102); c) Detect the actual position of the shielding element (202); and d) In the presence of a vacuum, adjust the shielding element (202) from its actual position to the target position while overcoming the frictional locking. The adjustment unit (600) is configured to shift the shielding element (202) in a direction (x, y) relative to the transverse direction of the particle beam (110).

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