Multilayer aerosol deposition coating for aluminum components for plasma processing chambers

Abstract

To provide a plasma chamber component for use in the manufacture of a semiconductor device.SOLUTION: In a device adapted for use in a plasma processing chamber, a component body 204, which is an aluminum body having at least one side, has an aluminum oxide-containing aerosol-deposited coating 208 disposed on at least one side of a component body 204, and an yttrium-containing aerosol-deposited coating 212 deposited on the aluminum oxide-containing aerosol-deposited coating 208. The yttrium-containing aerosol-deposited coating includes yttria (Y2O3).SELECTED DRAWING: Figure 2C

Description

【Background Art】 【0001】 [Cross - Reference to Related Applications] This application claims the benefit of priority of U.S. Application No. 62 / 814,022, filed Mar. 5, 2019, which is hereby incorporated by reference in its entirety for all purposes. 【0002】 This disclosure generally relates to the manufacture of semiconductor devices. In particular, this disclosure relates to plasma chamber components used in the manufacture of semiconductor devices. 【0003】 During semiconductor wafer processing, a plasma processing chamber is used to process semiconductor devices. Aluminum components of the plasma processing chamber are exposed to the plasma. The plasma can degrade the components. 【Summary of the Invention】 【0004】 In accordance with an object of this disclosure, an apparatus adapted for use in a plasma processing chamber is provided. An aluminum body having at least one surface is provided. An aluminum oxide - containing aerosol deposition coating is deposited on at least one surface of the aluminum body. A yttrium - containing aerosol deposition coating is deposited on the aluminum oxide - containing aerosol deposition coating. 【0005】 In another embodiment, a method for coating a plasma processing chamber component is provided. An aluminum oxide - containing coating is aerosol - deposited on at least one surface of the plasma processing chamber component. A yttrium - containing coating is aerosol - deposited on the aluminum oxide - containing coating. 【0006】 These and other features of this disclosure will be described in more detail in the following detailed description of the invention of this disclosure, in conjunction with the following figures. 【Brief Description of the Drawings】 【0007】 This disclosure is provided for illustrative purposes only and not for limitation, and in the figures of the attached drawings, similar reference numbers mean similar elements. 【0008】 [Figure 1] A high-level flowchart of an embodiment. 【0009】 [Figure 2A] A schematic diagram of the component processed according to the embodiment. [Figure 2B] A schematic diagram of the component processed according to the embodiment. [Figure 2C] A schematic diagram of the component processed according to the embodiment. 【0010】 [Figure 3] A schematic diagram of a plasma processing chamber that may be used in the embodiment. [Modes for carrying out the invention] 【0011】 Herein, the disclosure is described in detail with reference to some preferred embodiments thereof, as shown in the accompanying drawings. In the following description, some specific details are given in order to provide a full understanding of the disclosure. However, it will be obvious to those skilled in the art that the disclosure may be carried out without some or all of these specific details. In other examples, well-known process steps and / or configurations are not described in detail so as not to make the disclosure unnecessarily difficult to understand. 【0012】 In plasma processing chambers, coated components are used. Because bare aluminum is easily polished, it is a common material for providing coated components. To protect the bare aluminum from the plasma, it must be adequately coated. 【0013】 For ease of understanding, Figure 1 is a high-level flowchart of the process used in the embodiment. A component body is provided (step 104). Figure 2A is a schematic cross-sectional view of component body 204. Component body 204 is an aluminum body. In this example, the aluminum body is at least 95% by weight of pure aluminum. For example, the aluminum body is made of Al6061. Generally, the aluminum body is either pure aluminum or an aluminum alloy. Generally, the aluminum alloy is at least 95% by weight of pure aluminum. 【0014】 After the component body 204 is provided, at least one surface of the component body 204 is polished (step 108). In this example, the top surface of the component body 204 is polished. Since the component body 204 is at least 95% pure aluminum, the surface is soft enough to be polished. The polishing provides a surface roughness of less than 16 Ra (microinches) (0.0004064 mm). In other embodiments, the polishing provides a surface roughness of less than 10 Ra (0.000254 mm). In other embodiments, the polishing provides a surface roughness of less than 5 Ra (0.000127 mm). 【0015】 After the component 204 is polished (step 108), an aluminum oxide (Al2O3) aerosol deposition film is deposited on at least one polished surface of the component body 204 (step 112). Aerosol deposition is achieved by flowing a carrier gas through a fluidized bed of solid ceramic particles. Driven by the pressure difference, the solid ceramic particles are accelerated through a nozzle, forming an aerosol jet at its outlet. The aerosol jet is then directed towards at least one polished surface of the component body 204 and impacts the surface at high speed. The solid particles break into solid nano-sized fragments, forming a film. Optimization of the carrier gas type, gas consumption, standoff distance, and scanning speed provides a high-quality film. Figure 2B is a schematic cross-sectional view of a portion of the component body 204 after the aluminum oxide aerosol deposition film 208 has been deposited on at least one polished surface of the component body 204. 【0016】 After the aluminum oxide aerosol deposition film is deposited (step 112), a yttrium-containing aerosol deposition film is deposited on the aluminum oxide aerosol deposition film 208 (step 116). In this example, the yttrium-containing aerosol deposition film contains yttria (Y2O3). In other embodiments, the yttrium-containing aerosol deposition film contains at least one of yttrium oxyfluoride (YOF), yttrium aluminum oxide, yttria-stabilized zirconia (YSZ), and yttrium(III) fluoride (YF3). Yttrium aluminum oxide is generally yttrium aluminum garnet (Y3Al5O3). 12 This represents many materials such as (YAG), monoclinic yttrium aluminum (Y4Al2O9(YAM)), and yttrium aluminum perovskite (YAlO3(YAP)). Figure 2C is a schematic cross-sectional view of a portion of the component body 204 after the yttrium-containing aerosol deposition film 212 has been deposited on the aluminum oxide aerosol deposition film 208. 【0017】 After the yttrium-containing aerosol deposition film 212 is deposited (step 116), the formation of the protective film is completed, and the component body 204 is attached to the plasma processing chamber (step 120). The plasma processing chamber is used to process the substrate (step 124), and plasma is generated in the chamber to process the substrate, such as etching the substrate. The yttrium-containing aerosol deposition film 212 is exposed to the plasma. 【0018】 Various embodiments for coating the component body 204 provide a more etching-resistant coating. An aerosol deposition process that relies on energy collisions between submicron solid ceramic powder and the substrate results in a coating with a bulk ceramic density greater than 95 wt%. The aerosol deposition process typically involves multiple passes; the first pass is used to fix the coating to the substrate for adhesion. Subsequent passes are used to deposit the thickness of the coating. 【0019】 Thermal spray yttria has relatively high porosity. While not bound by theory, yttria aerosol deposition is said to provide a coating with much lower porosity than thermal spray yttria. The density of the aerosol-deposited coating depends on the hardness of the substrate. When yttria aerosol deposition is performed directly on aluminum, the first coating is said to be able to penetrate the surface of the soft aluminum component body 204 to achieve the desired adhesion. However, in subsequent coating passes, the fragmentation and impact of the yttria aerosol deposition powder may not be effective due to the low hardness of the yttria anchor layer and the soft aluminum component body 204. The soft aluminum body reduces the impact energy. 【0020】 In the above embodiment, the aluminum oxide aerosol deposition film 208 is deposited on the aluminum component body 204. The aluminum oxide aerosol deposition film 208 forms an anchor layer that is harder than that of the yttria aerosol deposition film. Aluminum oxide has a Vickers hardness of 2085. Yttria has a Vickers hardness of 700. Because aluminum oxide is hard, the aluminum oxide aerosol deposition film 208 penetrates deep into the surface of the component body 204, forming a highly bonded interface with stronger adhesion. The anchor layer also provides a solid base for subsequent yttria aerosol deposition, providing more efficient fracturing and plastic deformation. The aluminum oxide aerosol deposition film 208 has better chemical resistance than the yttrium-containing aerosol film 212. More specifically, the improved chemical resistance provides a superior diffusion barrier to wet chemicals. The superior diffusion barrier then provides improved component life when the component body 204 is exposed to wet cleaning processes. 【0021】 The subsequent yttria aerosol deposition results in a yttrium-containing aerosol deposition film 212 with a higher density than when yttrium-containing aerosol deposition occurs on bare aluminum. 【0022】 In various embodiments, the yttrium-containing aerosol-deposited film 212 has a thickness of 1 to 20 microns. In other embodiments, the yttrium-containing aerosol-deposited film 212 has a thickness of 1 to 10 microns. In various embodiments, the aluminum oxide aerosol-deposited film 208 has a thickness of 1 to 20 microns. In other embodiments, the aluminum oxide aerosol-deposited film 208 has a thickness of 1 to 10 microns. Generally, an aluminum oxide aerosol-deposited film is an aluminum oxide-containing aerosol-deposited film. However, an aluminum oxide-containing aerosol-deposited film may further contain other materials or impurities. 【0023】 FIG. 3 schematically depicts an example of a plasma processing chamber 300. The plasma processing chamber 300 may be used in an embodiment. The plasma processing chamber 300 includes a plasma reactor 302 having a confinement chamber 304 for plasma processing inside. A plasma power supply 306 adjusted by a matching network 308 supplies power to a transformer-coupled plasma (TCP) coil 310 located near a power window 312 by providing inductive coupling power, generating a plasma 314 within the confinement chamber 304 for plasma processing. A pinnacle 372 (where “pinnacle” is a registered trademark) extends from a chamber wall 376 of the confinement chamber 304 for plasma processing to the power window 312, forming a pinnacle ring. The pinnacle 372 is angled with respect to the chamber wall 376 and the power window 312 such that the interior angle between the pinnacle 372 and the chamber wall 376, and the interior angle between the pinnacle 372 and the power window 312 are each greater than 90° and less than 180°. As shown in the figure, the pinnacle 372 provides an angled ring near the top of the confinement chamber 304 for plasma processing. The TCP coil (upper power supply) 310 may be configured to form a uniform diffusion profile in the confinement chamber 304 for plasma processing. For example, the TCP coil 310 may be configured to generate toroidal power distribution in the plasma 314. The power window 312 is provided to separate the confinement chamber 304 for plasma processing from the TCP coil 310 while allowing energy to flow from the TCP coil 310 into the confinement chamber 304 for plasma processing. A wafer bias voltage power supply 316 adjusted by a matching network 318 supplies power to an electrode 320 to set a bias voltage on a substrate 366. The substrate 366 is supported by the electrode 320. A controller 324 sets points for the plasma power supply 306 and the wafer bias voltage power supply ******** 【0024】 It should be noted that the text seems to be incomplete at the end of where "********" is shown. Please check and correct if necessary.The plasma power supply 306 and the wafer bias voltage power supply 316 may be configured to operate at specific radio frequencies (e.g., 13.56 megahertz (MHz), 27 MHz, 2 MHz, 60 MHz, 400 kilohertz (kHz), 2.54 gigahertz (GHz), or a combination thereof). The plasma power supply 306 and the wafer bias voltage power supply 316 may be appropriately sized to supply a certain range of power to achieve the desired process performance. For example, in one embodiment, the plasma power supply 306 may supply 50 to 5000 watts of power, and the wafer bias voltage power supply 316 may supply a bias voltage of 20 to 2000 volts (V). The TCP coil 310 and / or electrode 320 may consist of two or more sub-coils or sub-electrodes. The sub-coils or sub-electrodes may be powered by a single power supply or multiple power supplies. 【0025】 As shown in FIG. 3, the plasma processing chamber 300 further includes a gas source / gas supply mechanism 330. The gas source 330 is in fluid connection with the plasma processing confinement chamber 304 through a gas inlet such as a gas injector 340. The gas injector 340 may be installed at any convenient position within the plasma processing confinement chamber 304 and may take any form for injecting gas. However, it is preferred that the gas inlet be configured to form an "adjustable" gas injection profile. The adjustable gas injection profile allows independent adjustment of the respective gas flows to a plurality of zones of the plasma processing confinement chamber 304. The gas injector is more preferably attached to the power window 312. Attachment of the gas injector to the power window 312 means that the gas injector can be attached on, within, or form part of the power window. The gas source / gas supply mechanism 330 is controlled by a controller 324. A pressure control valve 342 and a pump 344 are in fluid connection with the plasma processing confinement chamber 304. The process gas and by-products are removed from the plasma processing confinement chamber 304 by the pressure control valve 342 and the pump 344. The gas pressure control valve 342 and the pump 344 also function to maintain a specific pressure inside the plasma processing confinement chamber 304. The pressure control valve 342 can maintain a pressure of less than 1 torr during processing. An edge ring 360 is installed around the substrate 366. Kiyo by Lam Research Corporation of Fremont, California may be used to implement the embodiments. 【0026】 In various embodiments, this component may be a different part of the plasma treatment confinement chamber 304, such as a confinement ring, edge ring 360, pinnacle 372, electrostatic chuck, electrode 320, grounding ring, chamber liner, door liner, or other components. Other components of other types of plasma treatment chambers may be used. For example, the plasma exclusion ring of a bevel etching chamber may be covered in an embodiment. In another example, the plasma treatment chamber may be a dielectric treatment chamber or a conductive treatment chamber. In some embodiments, one or more but not all surfaces are covered. 【0027】 While this disclosure has been described in terms of several preferred embodiments, there are many variations, reinterpretations, modifications, and various alternative equivalents that fall within the scope of this disclosure. It should also be noted that there are many other ways of carrying out the methods and apparatus of this disclosure. Therefore, the following appended claims are intended to be construed as encompassing all such variations, reinterpretations, and various alternative equivalents that fall within the true spirit and scope of this disclosure. This disclosure may be implemented in the following forms: [Form 1] Apparatus suitable for use in a plasma processing chamber, An aluminum body having at least one surface, An aluminum oxide-containing aerosol deposition film deposited on at least one surface of the aluminum body, The aluminum oxide-containing aerosol-deposited coating is deposited on the yttrium-containing aerosol-deposited coating, A device equipped with the following features. [Form 2] The apparatus described in Embodiment 1, The yttrium-containing aerosol deposition coating is an apparatus containing yttria. [Form 3] The apparatus described in Embodiment 1, The yttrium-containing aerosol-deposited coating has a thickness in the range of 1 to 20 microns, and the apparatus is provided. [Form 4] The apparatus described in Embodiment 3, The apparatus wherein the aluminum oxide-containing aerosol-deposited coating has a thickness in the range of 1 to 20 microns. [Form 5] The apparatus described in Embodiment 1, The apparatus wherein the yttrium-containing aerosol deposition coating comprises one or more of yttria, yttrium oxyfluoride, yttrium aluminum oxide, yttria-stabilized zirconia, and yttrium(III) fluoride. [Form 6] The apparatus described in Embodiment 1, The apparatus is at least one of a confinement ring, an edge ring, a pinnacle, an electrostatic chuck, an electrode, a grounding ring, a chamber liner, and a door liner. [Form 7] The apparatus described in Embodiment 1, The apparatus wherein at least one surface of the aluminum body has a surface roughness of less than 16 Ra (microinches) (0.0004064 millimeters). [Form 8] The apparatus described in Embodiment 1, The apparatus wherein the aluminum body is made of at least 95% by weight of pure aluminum. [Form 9] The apparatus described in Embodiment 1, The apparatus is an aluminum oxide aerosol-deposited coating. [Form 10] The apparatus described in Embodiment 1, The apparatus wherein the aluminum oxide-containing aerosol-deposited film functions as an anchor layer to provide adhesion for the yttrium-containing aerosol-deposited film. [Form 11] The apparatus described in Embodiment 1, The apparatus wherein the aluminum oxide-containing aerosol deposition film functions as a diffusion barrier protecting against wet chemicals. [Form 12] A method for covering the main body of a plasma processing chamber component, A step of aerosol deposition of an aluminum oxide-containing film onto at least one surface of the plasma processing chamber component body, The process involves aerosol deposition of a yttrium-containing film containing yttrium aluminum oxide onto the aforementioned aluminum oxide-containing film, Methods that include... [Form 13] The method described in Embodiment 12, further, A method comprising the step of polishing at least one surface of the plasma processing chamber component body before aerosol deposition of the aluminum oxide-containing film. [Form 14] The method described in Embodiment 12, The yttrium-containing coating comprises yttria, and the method is described above. [Form 15] The method described in Embodiment 12, The yttrium-containing coating has a thickness in the range of 1 to 20 microns. [Form 16] The method described in Embodiment 15, The aluminum oxide-containing coating has a thickness in the range of 1 to 20 microns. [Form 17] The method described in Embodiment 12, The method wherein the yttrium-containing coating comprises one or more of yttria, yttrium oxyfluoride, aluminum yttrium oxide, yttria-stabilized zirconia, and yttrium(III) fluoride. [Form 18] The method described in Embodiment 12, The plasma processing chamber component body is at least one of a confinement ring, an edge ring, a pinnacle, an electrostatic chuck, an electrode, a grounding ring, a chamber liner, and a door liner, in a method. [Form 19] The method described in Embodiment 12, further, A method comprising the step of polishing at least one surface of the plasma processing chamber component body to have a surface roughness of less than 16 Ra (microinches) before aerosol deposition of the aluminum oxide-containing film. [Form 20] The method described in Embodiment 12, The method wherein the plasma processing chamber component body is made of at least 95% by weight of pure aluminum. [Form 21] The method described in Embodiment 12, The step of aerosol deposition of the aluminum oxide-containing film is a method for depositing an aluminum oxide film. [Form 22] The method described in Embodiment 12, A method wherein the aluminum oxide-containing film functions as an anchor layer to provide adhesion for the yttrium-containing film to be aerosol-deposited. [Form 23] The method described in Embodiment 12, A method wherein the aluminum oxide-containing coating functions as a diffusion barrier that protects against wet chemicals.

Claims

[Claim 1] Apparatus suitable for use in a plasma processing chamber, An aluminum body having at least one surface, Al deposited on at least one surface of the aluminum body 2 O 3 Aerosol-deposited coating and, The aforementioned Al 2 O 3 Yttrium-containing aerosol deposit film deposited on an aerosol deposit film, Equipped with, The yttrium-containing aerosol deposition film contains yttrium aluminum oxide, The apparatus wherein the yttrium aluminum oxide includes at least one of yttrium aluminum garnet (Y3Al5O12 (YAG)), monoclinic yttrium aluminum (Y4Al2O9 (YAM)), and yttrium aluminum perovskite (YAlO3 (YAP)). [Claim 2] The apparatus according to claim 1, The apparatus wherein the yttrium-containing aerosol deposition film has a thickness in the range of 1 to 20 microns. [Claim 3] The apparatus according to claim 2, The aforementioned Al 2 O 3 The aerosol deposition coating is a device having a thickness in the range of 1 to 20 microns. [Claim 4] The apparatus according to claim 1, The apparatus is at least one of a confinement ring, an edge ring, a pinnacle, an electrostatic chuck, an electrode, a grounding ring, and a door liner. [Claim 5] The apparatus according to claim 1, The apparatus wherein at least one surface of the aluminum body has a surface roughness of less than 16 Ra (microinches) (0.0004064 millimeters). [Claim 6] The apparatus according to claim 1, The apparatus wherein the aluminum body is made of at least 95% by weight of pure aluminum. [Claim 7] The apparatus according to claim 1, The aforementioned Al 2 O 3 An apparatus wherein the aerosol deposition film functions as an anchor layer to provide adhesion for the yttrium-containing aerosol deposition film. [Claim 8] The apparatus according to claim 1, The above-mentioned Al 2 O 3 The aerosol deposition film functions as a diffusion barrier for protecting from wet chemical substances, apparatus. [Claim 9] A method for covering the main body of a plasma processing chamber component, Al 2 O 3 The process involves aerosol deposition of the coating, The aforementioned Al 2 O 3 A process of aerosol deposition of a yttrium-containing coating onto the coating, Includes, The yttrium-containing coating comprises yttrium aluminum oxide, The method wherein the yttrium aluminum oxide comprises at least one of yttrium aluminum garnet (Y3Al5O12 (YAG)), monoclinic yttrium aluminum (Y4Al2O9 (YAM)), and yttrium aluminum perovskite (YAlO3 (YAP)). [Claim 10] The method according to claim 9, further, The aforementioned Al 2 O 3 A method comprising the step of polishing at least one surface of the plasma processing chamber component body before aerosol deposition of the coating. [Claim 11] The method according to claim 9, The yttrium-containing coating has a thickness in the range of 1 to 20 microns. [Claim 12] The method according to claim 11, The aforementioned Al 2 O 3 The coating has a thickness in the range of 1 to 20 microns. [Claim 13] The method according to claim 9, The plasma processing chamber component body is at least one of a confinement ring, an edge ring, a pinnacle, an electrostatic chuck, an electrode, a grounding ring, and a door liner, in a method. [Claim 14] The method according to claim 9, further, The aforementioned Al 2 O 3 A method comprising the step of polishing at least one surface of the plasma processing chamber component body to have a surface roughness of less than 16 Ra (microinches) before aerosol deposition of the coating. [Claim 15] The method according to claim 9, The method wherein the plasma processing chamber component body is made of at least 95% by weight of pure aluminum. [Claim 16] The method according to claim 9, The aforementioned Al 2 O 3 The step of aerosol deposition of a coating is a method for depositing an aluminum oxide coating. [Claim 17] The method according to claim 9, The aforementioned Al 2 O 3 A method wherein the coating functions as an anchor layer to provide adhesion for the yttrium-containing coating to be aerosol-deposited. [Claim 18] The method according to claim 9, The aforementioned Al 2 O 3 A method in which the coating acts as a diffusion barrier that protects against wet chemicals.

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