A display panel, its manufacturing method, and a display device.

Abstract

This application provides a display panel and its manufacturing method and display device. The display panel includes a first display area and a second display area. Both display areas include: a substrate and a plurality of thin-film transistors, a plurality of first electrodes, a pixel definition layer, a light-emitting layer, a plurality of second electrodes, and an encapsulation layer sequentially disposed on one side of the substrate. The pixel definition layer has a plurality of first openings, and each light-emitting unit of the light-emitting layer is disposed in the first opening. The plurality of first electrodes are electrically connected to the source of their corresponding thin-film transistors, and the second electrodes are transparent electrodes. The pixel definition layer of the second display area also includes at least one second opening. The first opening is disposed around the second opening, and a photosensitive unit is disposed in the second opening. The light-emitting unit in the first opening can emit infrared light or the light emitted by the light-emitting unit can be converted into infrared light. The photosensitive unit is used to receive infrared light and form a photocurrent between the first electrode and the second electrode, and transmits it to the source of the thin-film transistor through the first electrode.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display panel, a method for manufacturing the same, and a display device. Background Technology

[0002] Currently, optical sensors, including ambient light sensors, color temperature sensors, and proximity sensors, are installed in the displays of mobile phones and other electronic devices. Optical sensors, primarily composed of photosensitive elements, sense surrounding light conditions, including ambient light, color temperature, and distance. They then inform the processing chip of the electronic device to automatically adjust the backlight brightness of the display, reducing power consumption, or automatically adjusting screen brightness to prevent accidental touches. For example, when answering a call, if the proximity sensor detects a close proximity, the processor can turn off the display to prevent accidental touches. Furthermore, to protect the ear, the processor can adjust the volume accordingly. Ambient light sensors adjust screen brightness based on changes in the surrounding environment, providing a softer image and improving the user's visual experience. When the ambient light is high, the processor automatically adjusts the brightness of the display using an ambient light sensor to high; when the ambient light is low, the processor adjusts the brightness to low.

[0003] However, optical sensors, especially distance sensors, in current display devices are generally independent peripheral modules and are placed at the edge of the display device, occupying a large screen edge size, which affects the screen utilization rate of the display device, i.e., the screen ratio is low, and is not conducive to the thinning and lightening of the display device. Summary of the Invention

[0004] The purpose of this application is to provide a display panel and its manufacturing method, as well as a display device, to improve the screen-to-body ratio and reduce the thickness of the display device. The specific technical solution is as follows:

[0005] A first aspect of this application provides a display panel, the display panel including a first display area and a second display area, the first display area being disposed around the second display area, the second display area being a functional sensor display area; both the first display area and the second display area include: a substrate and a plurality of thin-film transistors, a plurality of first electrodes, a pixel definition layer, a light-emitting layer, a plurality of second electrodes, and an encapsulation layer sequentially disposed on one side of the substrate, the pixel definition layer having a plurality of first openings, each light-emitting unit of the light-emitting layer being disposed within the first opening, the plurality of first electrodes being electrically connected to the source of their corresponding thin-film transistors, and the second electrodes being transparent electrodes; the pixel definition layer of the second display area further includes at least one second opening, the first opening being disposed around the second opening, and a photosensitive unit being disposed within the second opening; the light-emitting unit within the first opening is capable of emitting infrared light or the light emitted by the light-emitting unit is capable of being converted into infrared light; the photosensitive unit is used to receive infrared light and form a photocurrent between the first electrode and the second electrode, and transmits it to the source of the thin-film transistor through the first electrode.

[0006] In some embodiments, the light-emitting unit includes periodically arranged red light-emitting units, green light-emitting units, and blue light-emitting units; in the second display area, a first planarization layer is provided on the side of the encapsulation layer away from the substrate, and at least one light conversion unit is provided in the first planarization layer, and the orthogonal projection of each light conversion unit on the pixel definition layer at least covers the first opening provided around the second opening, so as to convert the light emitted by the light-emitting unit into infrared light.

[0007] In some embodiments, the light conversion unit is a transparent nanopillar, and the light conversion unit is disposed opposite to the red light-emitting unit disposed in the first opening.

[0008] In some embodiments, the light conversion unit comprises a transparent plastic and europium metal coated on the surface of the transparent plastic.

[0009] In some embodiments, the light conversion unit is a photoluminescent quantum dot element, which is disposed opposite to the blue light-emitting unit disposed in the first opening, and the photoluminescent quantum dot is made of materials including PbSe, CdTe, and CdSe.

[0010] In some embodiments, the light-emitting unit includes periodically arranged red light-emitting units, green light-emitting units, and blue light-emitting units, and at least one of the blue light-emitting units disposed around the second opening contains quantum dot material to emit infrared light.

[0011] In some embodiments, the light-emitting unit includes periodically arranged red light-emitting units, green light-emitting units, and blue light-emitting units, and at least one of the red light-emitting units disposed around the second opening contains infrared light-emitting material to emit infrared light.

[0012] In some embodiments, the second display area is the area surrounding the camera.

[0013] In some embodiments, the photosensitive unit is made of amorphous silicon, photosensitive inorganic material, or photosensitive organic material.

[0014] A second aspect of this application provides a method for manufacturing a display panel, used to manufacture the display panel described above, comprising the following steps:

[0015] A substrate is provided, the substrate including a first display area and a second display area, the first display area being disposed around the second display area, and the second display area being a functional sensor display area.

[0016] Thin-film transistors are fabricated in the first display area and the second display area of ​​the substrate.

[0017] On the side of the thin-film crystal in the first display area and the second display area away from the substrate, a first electrode, a pixel definition layer, a light-emitting layer, a second electrode, and an encapsulation layer are prepared. The pixel definition layer has a plurality of first openings, and each light-emitting unit of the light-emitting layer is disposed in the first opening. The first electrode is electrically connected to the source of the thin-film transistor.

[0018] A second opening is prepared in the pixel definition layer of the second display area, which is on the same layer as the first opening. The first opening is arranged around the second opening. A photosensitive unit is provided in the second opening. The light-emitting unit in the first opening can emit infrared light or the light emitted by the light-emitting unit can be converted into infrared light. The photosensitive unit is used to receive infrared light and form a photocurrent between the first electrode and the second electrode. The photocurrent is transmitted to the source electrode through the first electrode so as to control the display state of the display panel through the thin film transistor.

[0019] A third aspect of this application provides a display device, the display device including the display panel described above.

[0020] The display panel provided in this application embodiment has an infrared light-emitting unit that can emit infrared light or convert the light emitted by the light-emitting unit into infrared light, serving as the transmitter of a distance sensor, and a light-sensing unit that serves as the receiver of the distance sensor. By integrating the distance sensor into the film structure of the display panel, there is no need to reserve space for the distance sensor at the edge of the screen, reducing the screen occupancy and improving the screen-to-body ratio. Furthermore, by setting the second opening in the same layer as the first opening, the number of film layers in the display panel can be reduced, which is beneficial for making the display panel thinner and lighter.

[0021] Of course, implementing any product or method of this application does not necessarily require achieving all of the advantages described above at the same time. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other embodiments can be obtained based on these drawings.

[0023] Figure 1 This is a simplified structural diagram of the display panel provided in an embodiment of this application;

[0024] Figure 2 This is a schematic diagram of the structure of the display panel provided in the embodiments of this application in the first embodiment;

[0025] Figure 3 This is a schematic diagram of the structure of the display panel provided in the embodiments of this application in a second embodiment;

[0026] Figure 4 This is a schematic diagram of the structure of the display panel provided in the embodiments of this application in a third embodiment;

[0027] Figure 5 This is a schematic diagram of the structure of the display panel provided in the embodiments of this application in a fourth embodiment;

[0028] Figure 6 This is a schematic diagram of the structure of the display panel provided in the fifth embodiment of this application.

[0029] The attached figures are labeled as follows:

[0030] Substrate 100; First display area 101; Second display area 102; Thin film transistor 200; Active layer 201; Channel region 201a; Doped region 201b; Source 202; Drain 203; Gate 204; Gate insulating layer 205; Interlayer insulating layer 206; Second planarization layer 207; First electrode 208; Pixel definition layer 209; Light-emitting unit 210; Red light-emitting unit 210a; Blue light-emitting unit 210b; Second electrode 211; Encapsulation layer 212; First planarization layer 213; Photosensitive unit 214; Light conversion unit 300; Cover plate 400; Reflector S. Detailed Implementation

[0031] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art based on this application are within the scope of protection of this application.

[0032] This application provides a display panel, such as... Figure 1 As shown, the display panel includes a first display area 101 and a second display area 102. The first display area 101 is arranged around the second display area 102, and the second display area 102 is a display area for functional sensors. Figures 2-6 As shown, both the first display area 101 and the second display area 102 include: a substrate 100 and a plurality of thin-film transistors 200, a plurality of first electrodes 208, a pixel definition layer 209, a light-emitting layer, a plurality of second electrodes 211, and an encapsulation layer 212 sequentially disposed on one side of the substrate 100. The pixel definition layer 209 has a plurality of first openings, and each light-emitting unit 210 of the light-emitting layer is disposed within a first opening. The plurality of first electrodes 208 are electrically connected to the source 202 of their corresponding thin-film transistors 200, and the second electrodes 211 are transparent electrodes. The pixel definition layer 209 of the second display area 102 also includes at least one second opening, with the first opening surrounding the second opening. A photosensitive unit 214 is disposed within the second opening. The light-emitting unit 210 within the first opening can emit infrared light or the light emitted by the light-emitting unit 210 can be converted into infrared light. The photosensitive unit 214 is used to receive infrared light and form a photocurrent between the first electrodes 208 and the second electrodes 211, which is transmitted to the source 202 of the thin-film transistor 200 through the first electrodes 208.

[0033] In this embodiment, the light-emitting unit 210 can emit infrared light or the light emitted by the light-emitting unit 210 can be converted into infrared light, serving as the transmitter of the distance sensor, and the photosensitive unit 214 serves as the receiver of the distance sensor. The infrared light emitted by the transmitter can be detected by the photosensitive unit 214, which generates a corresponding electrical signal according to the distance and transmits it to the processing chip of the electronic device. The specific working principle is as follows: the photosensitive unit 214 receives infrared light from the environment and generates photocurrent, which is transmitted to the source 202 of the thin-film transistor 200 through the first electrode 208. The display state of the display panel is controlled by detecting the on-state current of the thin-film transistor 200, such as adjusting to high brightness, low brightness, or turning off the display panel.

[0034] By integrating the distance sensor into the film structure of the display panel, there is no need to reserve space for the distance sensor at the edge of the screen, reducing the screen occupancy and improving the screen-to-body ratio. Furthermore, both the second and first openings are located within the pixel definition layer 209, meaning they are on the same layer, which reduces the number of film layers in the display panel and contributes to a thinner and lighter display panel.

[0035] Among them, such as Figures 2-6 As shown in the figure, S is a reflector. When the distance sensor measures the distance, the reflector S can change the propagation direction of the infrared light emitted by the light-emitting unit 210 or the infrared light converted from the light emitted by the light-emitting unit 210, so that the light-sensing unit 214 can receive it and transmit the corresponding electrical signal to the processing chip of the electronic device according to the distance. The processing chip indicates whether the display screen needs to be turned off and whether the earpiece volume needs to be adjusted.

[0036] Understandably, ambient light sensors and color temperature sensors can also be integrated into the film structure of the display panel, just like distance sensors. The difference between them and distance sensors is that ambient light sensors and color temperature sensors do not require a transmitter.

[0037] Specifically, the thin-film transistor 200 includes an active layer 201, a source 202, a drain 203, and a gate 204 electrically connected to the active layer 201. The active layer 201 and the gate 204 are separated by a gate insulating layer 205. The gate insulating layer 205 is separated from the first electrode 208 by an interlayer dielectric insulating layer 206. The surface of the first electrode 208 is planarized by a second planarization layer 207. The first electrode 208 can be either an anode or a cathode. When the first electrode 208 is an anode, the second electrode 211 is a cathode, and when the first electrode 208 is a cathode, the second electrode 211 is an anode. More specifically, the active layer 201 includes a channel region 201a and doped regions 201b located on both sides of the channel region 201a. The source 202 and the drain 203 are electrically connected to the doped regions 201b, respectively. The second planarization layer 207 can be fabricated by coating and can be made of an organic insulating material.

[0038] In some embodiments of this application, such as Figures 2-6 As shown, the light-emitting unit 210 includes a periodically arranged red light-emitting unit 210a, a green light-emitting unit (not shown in the figure), and a blue light-emitting unit 210b; within the second display area 102, a first planarization layer 213 is provided on the side of the encapsulation layer 212 away from the substrate 100, and at least one light conversion unit 300 is provided in the first planarization layer 213. The orthogonal projection of each light conversion unit 300 on the pixel definition layer 209 at least covers the first opening provided around the second opening, so as to convert the light emitted by the light-emitting unit 210 into infrared light.

[0039] In this embodiment, the orthographic projection of each light conversion unit 300 onto the pixel definition layer 209 at least covers the first opening surrounding the second opening. This means that the orthographic projection of each light conversion unit 300 onto the pixel definition layer 209 exactly and completely covers the first opening, i.e., the orthographic projection area of ​​the light conversion unit 300 is equal to the area of ​​the first opening. Alternatively, the orthographic projection of each light conversion unit 300 onto the pixel definition layer 209 covers not only the first opening but also the surrounding area of ​​the first opening, i.e., the orthographic projection area of ​​the light conversion unit 300 is larger than the area of ​​the first opening. The larger orthographic projection area of ​​the light conversion unit 300 allows it to convert more light emitted by the light-emitting unit 210 within the first opening into infrared light, increasing the intensity of the emitted signal and thus improving the detection rate of the photosensing unit 214.

[0040] In this embodiment, a light conversion unit 300 is fabricated on the side of the encapsulation layer 212 away from the substrate 100, and planarized using a first planarization layer 213. This facilitates the fabrication of subsequent film layers, and the first planarization layer 213 also protects the light conversion unit 300. Specifically, the first planarization layer 213 can be an OC (Over Coat) layer. The encapsulation layer 212 can employ an inorganic-organic-inorganic three-layer encapsulation method. Encapsulating the light-emitting layer with the encapsulation layer 212 helps prevent external moisture and oxygen from affecting the light-emitting layer. The inorganic layer can be SiN. X The layer can also be SiN. X The composite film layer of SiO2 has better water and oxygen barrier properties.

[0041] like Figures 2-6 As shown, the side of the light conversion unit 300 away from the substrate 100 also includes a cover plate 400, which encapsulates the light conversion unit 300 and provides protection such as insulation and waterproofing.

[0042] In the first embodiment, such as Figure 2 As shown, the light conversion unit 300 is a transparent nanopillar, and the light conversion unit 300 is disposed opposite to the red light-emitting unit 210a disposed in the first opening.

[0043] In this embodiment, the transparent nanoparticles can be AlGaN nanopillars or SiN nanopillars. X Nanopillars, such as titanium dioxide nanopillars, can be fabricated using nanoimprinting. Specific colors, such as the infrared light required in this embodiment, can be produced by adjusting the structure and size of the nanopillar film.

[0044] In the second embodiment, such as Figure 3 As shown, the light conversion unit 300 is a wavelength conversion material (WCM), which is composed of transparent plastic and europium metal coated on the surface of the transparent plastic.

[0045] In this embodiment, the wavelength conversion material not only allows visible light to pass through but also converts incident ultraviolet wavelengths into infrared light. Preferably, the light conversion unit 300 and the blue light-emitting unit 210b can be arranged opposite each other. This is because the wavelengths of blue light and ultraviolet light are closer, so the blue light-emitting unit 210b may contain more ultraviolet light. Therefore, arranging the light conversion unit 300 and the blue light-emitting unit 210b opposite each other allows for the collection of more ultraviolet light, resulting in more ultraviolet light being converted into infrared light.

[0046] Specifically, the wavelength range of red light is 625–740 nm, the wavelength range of yellow light is 570–585 nm, the wavelength range of blue light is 440–475 nm, and the wavelength range of ultraviolet light is 10 nm–400 nm.

[0047] In the third embodiment, such as Figure 4 As shown, the light conversion unit 300 is a photoluminescent quantum dot element, which is disposed opposite to the blue light-emitting unit 210b disposed in the first opening. The photoluminescent quantum dot is made of PbSe, CdTe, and CdSe.

[0048] In this embodiment, quantum dot materials possess advantages such as high luminous efficiency, narrow emission peak, high purity of emitted color, and wide color gamut. This application does not limit the materials used to fabricate photoluminescent quantum dots; the PbSe (lead selenide) quantum dots, CdTe (cadmium telluride) quantum dots, or CdSe (cadmium selenide) quantum dots listed here are merely examples and not exhaustive. The photoluminescent quantum dot element includes a thin film layer made of PbSe quantum dots, CdTe quantum dots, or CdSe, and a cathode layer and an anode layer located on both sides of the photoluminescent quantum dot film layer. Furthermore, an electron transport layer can be provided between the cathode layer and the photoluminescent quantum dot film layer, and a hole transport layer can be provided between the anode layer and the photoluminescent quantum dot film layer, wherein the traces of the cathode and anode can be led to the bonding region.

[0049] When a photoinduced quantum dot element is positioned in the light emission direction of the blue light-emitting unit 210b, the PbSe, CdTe, and CdSe quantum dots can emit infrared light under the excitation of the light emitted by the blue light-emitting unit 210b, serving as an infrared light source. The photoinduced quantum dot element is positioned opposite the blue light-emitting unit 210b because the frequency of blue light is greater than that of red light. Exciting the photoinduced quantum dot element with blue light can increase the intensity of the emitted infrared light signal, thereby improving the detection rate of the photosensitive unit 214.

[0050] In the fourth embodiment, such as Figure 5 As shown, at least one blue light-emitting unit 210b arranged around the second opening contains quantum dot material, enabling the blue light-emitting unit 210b to emit infrared light.

[0051] In this embodiment, by doping PbSe quantum dot material into the blue light-emitting unit 210b, the blue light-emitting unit 210b can excite the PbSe quantum dots to emit infrared light when it emits light. Furthermore, the transmission distance between the light-emitting material of the blue light-emitting unit 210b and the PbSe quantum dots is reduced, thereby increasing the intensity of the converted infrared light. The modified blue light-emitting unit 210b is arranged around the second opening; that is, the blue light-emitting units 210b surrounding the photosensitive unit 214 are modified so that the distance between the emitted infrared light and the photosensitive unit 214 is closer, reducing the attenuation of the infrared light intensity and thus improving the detection rate of the photosensitive unit 214. Doping the blue light-emitting unit 210b with PbSe quantum dot material is because the blue light-emitting unit 210b contains more ultraviolet light, which can excite more infrared light.

[0052] Specifically, quantum dot materials can be selected from PbSe, CdTe, CdS, CdSe, ZnSe, InP, CuInS, CuInSe, PbS, CdS / ZnS, CdSe / ZnS, CdSe / ZnSeS, CdSe / CdS, ZnSe / ZnS, InP / ZnS, CuInS / ZnS, (Zn)CuInS / ZnS, (Mn)CuInS / ZnS, AgInS / ZnS, and (Zn)AgInS / ZnS. At least one of the following: nS, CuInSe / ZnS, CuInSeS / ZnS, PbS / ZnS, CsPbCl3 / ZnS, CsPbBr3 / ZnS, CsPhI3 / ZnS, organic-inorganic perovskite quantum dots (MAPbX3, where MA is CH3NH3 and X is selected from any one of Cl, Br, and I), all-inorganic perovskite quantum dots (CsPbX3, where X is selected from any one of Cl, Br, and I), carbon quantum dots, and silicon quantum dots.

[0053] Furthermore, quantum dot materials can be PbSe. As a feasible approach, such as... Figure 5 As shown, a doped layer of PbSe quantum dot material can be fabricated on the blue light-emitting unit 210b, and this doped layer serves as the light conversion unit 300. Alternatively, PbSe quantum dot material can be doped into the material used to fabricate the blue light-emitting unit 210b, thus integrating the blue light-emitting unit 210b and the light conversion unit 300 into one unit.

[0054] Furthermore, the size of quantum dots is 4nm-14nm.

[0055] In the fifth embodiment, such as Figure 6 As shown, at least one red light-emitting unit 210a arranged around the second opening contains an infrared light-emitting material and emits infrared light using the infrared light-emitting material. That is, the light-emitting unit 210 can directly emit infrared light.

[0056] In this embodiment, the red light-emitting unit 210a surrounding the light-sensing unit 214 can be modified into a light-emitting unit 210 containing infrared light-emitting material, thereby emitting more infrared light, thus eliminating the need to set up the light conversion unit 300.

[0057] In the above embodiments, the second display area 102 is the area surrounding the camera.

[0058] In this embodiment, the second display area 102 is located in the area surrounding the camera, which is also close to the earpiece. Placing a distance sensor in this area allows for more accurate target distance detection. Based on the detection results, the distance sensor can promptly instruct the processor to turn off the display screen, preventing accidental touches and adjusting the volume accordingly. Furthermore, placing the second display area 102 in the area surrounding the camera integrates it seamlessly with the camera, resulting in a more aesthetically pleasing appearance.

[0059] In the above embodiments, as Figures 2-6 As shown, the photosensitive unit 214 is made of amorphous silicon, photosensitive inorganic material, or photosensitive organic material.

[0060] The photosensitive unit 214, made of amorphous silicon, photosensitive inorganic materials, or photosensitive organic materials, can sense light signals and react accordingly, emitting a certain electrical signal. This electrical signal is transmitted to the processing chip of the electronic device, which adjusts the display screen according to the signal. This light can be visible light, infrared light, or ultraviolet light. The photosensitive unit 214 is made of amorphous silicon, which can be made into a very thin film and can be freely cut, facilitating the thinner and lighter design of the display panel.

[0061] Commonly used photosensitive inorganic materials for the photosensitive unit 214 include silicon, germanium, and cadmium sulfide, which can exist in the form of nanoparticles, nanowires, nanorods, etc. Commonly used photosensitive organic materials for the photosensitive unit 214 include azobenzene derivatives. The above examples are merely illustrative and are not intended to limit this application. Those skilled in the art should understand that any photosensitive material can be used to form the photosensitive unit 214 in this disclosure.

[0062] A second aspect of this application provides a method for manufacturing a display panel, used to manufacture the display panel described above, comprising the following steps:

[0063] S1: A substrate 100 is provided. The substrate 100 includes a first display area 101 and a second display area 102. The first display area 101 is disposed around the second display area 102. The second display area 102 is a functional sensor display area.

[0064] S2: Thin film transistors 200 are fabricated in the first display area 101 and the second display area 102 of the substrate 100;

[0065] S3: On the side of the thin film crystal in the first display area 101 and the second display area 102 away from the substrate 100, a first electrode 208, a pixel definition layer 209, a light-emitting layer, a second electrode 211, and an encapsulation layer 212 are prepared. The pixel definition layer 209 has a plurality of first openings. Each light-emitting unit 210 of the light-emitting layer is disposed in the first opening. The first electrode 208 is electrically connected to the source 202 of the thin film transistor 200.

[0066] S4: A second opening is prepared in the pixel definition layer 209 of the second display area 102, which is on the same layer as the first opening. The first opening is arranged around the second opening. A photosensitive unit 214 is provided in the second opening. The light-emitting unit 210 in the first opening can emit infrared light or the light emitted by the light-emitting unit 210 can be converted into infrared light. The photosensitive unit 214 is used to receive infrared light and form a photocurrent between the first electrode 208 and the second electrode 211. The photocurrent is transmitted to the source electrode 202 through the first electrode 208 so as to control the display state of the display panel through the thin film transistor 200.

[0067] The display panel manufactured using this method can integrate the distance sensor into the film layer structure of the display panel, eliminating the need to reserve space for the distance sensor at the screen boundary, thus reducing screen occupancy and improving the screen-to-body ratio. Furthermore, by placing the second opening in the same layer as the first opening, the number of film layers in the display panel can be reduced, contributing to a thinner and lighter display panel.

[0068] A third aspect of this application provides a display device, which includes the display panel described above.

[0069] In this embodiment, the display device includes a display panel. By integrating the distance sensor into the film structure of the display panel, there is no need to reserve space for the distance sensor at the edge of the screen, reducing the screen occupancy and improving the screen-to-body ratio. Furthermore, by setting the second opening in the same layer as the first opening, the number of film layers in the display panel can be reduced, which is beneficial for making the display panel thinner and lighter.

[0070] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0071] The various embodiments in this specification are described in a related manner. The same or similar parts between the various embodiments can be referred to each other. Each embodiment focuses on describing the differences from other embodiments.

[0072] The above description is merely a preferred embodiment of this application and is not intended to limit the scope of protection of this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application are included within the scope of protection of this application.

Claims

1. A display panel, characterized by, The display panel comprises a first display area and a second display area, the first display area is arranged around the second display area, and the second display area is a functional sensor display area. The first display area and the second display area each comprise a substrate, a plurality of thin film transistors arranged on one side of the substrate, a plurality of first electrodes, a pixel definition layer, a light emitting layer, a plurality of second electrodes, and an encapsulation layer, the pixel definition layer has a plurality of first openings, each light emitting unit of the light emitting layer is arranged in the first opening, the plurality of first electrodes are electrically connected to the source electrodes of the corresponding thin film transistors, and the second electrodes are transparent electrodes. The pixel definition layer of the second display area further comprises at least one second opening, the first opening is arranged around the second opening, and a light sensing unit is arranged in the second opening; the light emitted by the light emitting unit in the first opening can be converted into infrared light; the light sensing unit is used for receiving infrared light and forming a photoelectric current between the first electrode and the second electrode, and the photoelectric current is transmitted to the source electrode of the thin film transistor through the first electrode; The light emitting unit can serve as a transmitting end of a distance sensor, the light sensing unit serves as a receiving end of the distance sensor, and the light sensing unit generates a corresponding electrical signal according to the distance. The light conversion unit is a transparent nano column, the light conversion unit is arranged opposite to a red light emitting unit arranged in the first opening, and the transparent nano column is made by nanoimprinting.

2. The display panel of claim 1, wherein, The light emitting unit comprises periodically arranged red light emitting units, green light emitting units, and blue light emitting units; in the second display area, a first planarization layer is arranged on the side of the encapsulation layer away from the substrate, at least one light conversion unit is arranged in the first planarization layer, and the orthographic projection of each light conversion unit on the pixel definition layer at least covers the first opening arranged around the second opening, so as to convert the light emitted by the light emitting unit into infrared light.

3. The display panel of claim 2, wherein, The light conversion unit is composed of transparent plastic and metallic europium coated on the surface of the transparent plastic.

4. The display panel of claim 2, wherein, The light conversion unit is a photo-induced quantum dot element, the photo-induced quantum dot element is arranged opposite to the blue light emitting unit arranged in the first opening, and the manufacturing material of the photo-induced quantum dot element comprises PbSe, CdTe, and CdSe.

5. The display panel of claim 1, wherein, The light emitting unit comprises periodically arranged red light emitting units, green light emitting units, and blue light emitting units, and at least one blue light emitting unit arranged around the second opening contains quantum dot material to emit infrared light.

6. The display panel of claim 1, wherein, The light emitting unit comprises periodically arranged red light emitting units, green light emitting units, and blue light emitting units, and at least one red light emitting unit arranged around the second opening contains infrared light emitting material to emit infrared light.

7. The display panel of any one of claims 1-6, wherein, The second display area is a camera peripheral area.

8. The display panel of any one of claims 1-6, wherein, The manufacturing material of the light sensing unit is amorphous silicon or light-sensitive inorganic material or light-sensitive organic material. 9.A method for manufacturing a display panel, the method being used for manufacturing the display panel according to any one of claims 1-8, characterized in that, The method comprises the following steps: A substrate substrate is provided, which includes a first display area and a second display area, the first display area is arranged around the second display area, and the second display area is a functional sensor display area; A thin film transistor is prepared in the first display area and the second display area of the substrate substrate; A first electrode, a pixel definition layer, a light emitting layer, a second electrode and an encapsulation layer are prepared on the side of the thin film transistor away from the substrate substrate in the first display area and the second display area, the pixel definition layer has a plurality of first openings, each light emitting unit of the light emitting layer is arranged in the first opening, and the first electrode is electrically connected with the source electrode of the thin film transistor; A second opening is prepared in the pixel definition layer of the second display area, which is in the same layer as the first opening, the first opening is arranged around the second opening, the second opening is provided with a light sensing unit, the light emitted by the light emitting unit in the first opening can be converted into infrared light, the light sensing unit is used for receiving infrared light and forming a photoelectric current between the first electrode and the second electrode, and the photoelectric current is transmitted to the source electrode through the first electrode to control the display state of the display panel through the thin film transistor; Wherein, the light emitting unit can serve as the emitting end of the distance sensor, the light sensing unit serves as the receiving end of the distance sensor, and the light sensing unit generates a corresponding electrical signal according to the distance; a light conversion unit is arranged at a position opposite to the red light emitting unit of the first opening, the light conversion unit is a transparent nano column, and the transparent nano column is prepared by nano-imprinting.

10. A display device, characterized by comprising: The display device includes the display panel of any one of claims 1-8.

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