Transfer method of LED chip, display panel and display device

Abstract

The application relates to a transfer method of an LED chip, which comprises the following steps: providing a temporary substrate, arranging a first glue layer on one side of the temporary substrate; providing a light-emitting chip module comprising a plurality of LED chips; transferring the plurality of LED chips to the side of the first glue layer which is opposite to the temporary substrate; providing a transfer substrate, arranging a second glue layer on one side of the transfer substrate; transferring the plurality of LED chips to the side of the second glue layer which is opposite to the transfer substrate at a first predetermined temperature; and providing a driving backboard, transferring the plurality of LED chips on the transfer substrate to the driving backboard at a second predetermined temperature, wherein the second predetermined temperature is less than the first predetermined temperature. The application further provides a display panel and a display device with the display panel.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a method for transferring an LED chip, a display panel, and a display device having the display panel. Background Technology

[0002] Micro LEDs, as a next-generation display technology, offer advantages over traditional LEDs, including higher brightness, faster response times, lower energy consumption, and longer lifespan. Furthermore, they can be combined with flexible panels to achieve flexible displays, making them widely applicable across various display fields. In recent years, the number of display products based on Micro LED chips has been increasing, such as wearable watches and mobile phone screens. Because display products require high pixel accuracy, improving the transfer yield of Micro LED chips is crucial for enhancing the overall yield of display products.

[0003] However, due to the small size of Micro LED chips, there are still technical obstacles to overcome before they can be mass-produced. For example, existing Micro LED chips have problems such as slow transfer speed, low transfer yield and high transfer cost when mass-transferring. Summary of the Invention

[0004] In view of the shortcomings of the prior art, the purpose of this application is to provide a method for transferring LED chips, a display panel, and a display device having the display panel, which aims to solve the problems in the prior art, such as low overall transfer efficiency, low transfer yield, and high transfer cost due to the small difference in adhesion between the donor substrate and the acceptor substrate during the LED chip transfer process, which limits the mass transfer efficiency of LED chips.

[0005] A method for transferring LED chips includes: providing a transient substrate and disposing of a first adhesive layer on one side of the transient substrate; providing a light-emitting chip module including a plurality of LED chips and transferring the plurality of LED chips to the side of the first adhesive layer opposite to the transient substrate; providing a transfer substrate and disposing of a second adhesive layer on one side of the transfer substrate, and transferring the plurality of LED chips to the side of the second adhesive layer opposite to the transfer substrate at a first predetermined temperature; and providing a driving backplate and transferring the plurality of LED chips on the transfer substrate to the driving backplate at a second predetermined temperature, wherein the second predetermined temperature is lower than the first predetermined temperature.

[0006] In summary, the LED chip transfer method of this application controls the adhesion of the first adhesive layer and the second adhesive layer by changing the phase transition of the first adhesive layer and the second adhesive layer through temperature control, thereby completing the final transfer of the LED chip from the light-emitting chip module to the driving backplane, thus improving the overall transfer efficiency of the LED chip. Moreover, the adhesion control method of the LED chip transfer method of this application is simple, achieving the change of adhesion force by controlling only the temperature.

[0007] Optionally, providing a light-emitting chip module including a plurality of LED chips and transferring the plurality of LED chips to the side of the first adhesive layer opposite to the transient substrate includes: providing the light-emitting chip module; bonding the plurality of LED chips in the light-emitting chip module to the side of the first adhesive layer opposite to the transient substrate; peeling off the substrate layer in the light-emitting chip module; and etching the first adhesive layer located around the LED chips to transfer the plurality of LED chips to the side of the first adhesive layer opposite to the transient substrate.

[0008] Optionally, providing a transfer substrate, with a second adhesive layer disposed on one side of the transfer substrate, and transferring a plurality of LED chips to the side of the second adhesive layer opposite to the transfer substrate at a first predetermined temperature, includes: providing the transfer substrate, with the second adhesive layer disposed on one side of the transfer substrate; bonding a plurality of LED chips on the transient substrate to the side of the second adhesive layer opposite to the transfer substrate; heating the first adhesive layer and the second adhesive layer to the first predetermined temperature to detach the transient substrate and the first adhesive layer from the LED chips; and etching the second adhesive layer located around the LED chips to transfer the plurality of LED chips to the side of the second adhesive layer opposite to the transfer substrate.

[0009] Optionally, providing a driving backplate and transferring a plurality of LED chips on the transfer substrate to the driving backplate at a second predetermined temperature includes: providing the driving backplate, moving a plurality of LED chips on the transfer substrate to the driving backplate and electrically connecting them to the driving backplate; adjusting the second adhesive layer to the second predetermined temperature so that the transfer substrate and the second adhesive layer detach from the plurality of LED chips.

[0010] Optionally, the first adhesive layer is made of a polymer with a high glass temperature, and the second adhesive layer is made of a polymer with a low glass temperature.

[0011] Optionally, the light-emitting chip module includes a plurality of LED chips and a substrate layer, wherein the plurality of LED chips are disposed on one side of the substrate layer and facing the first adhesive layer, and the substrate layer is a sapphire substrate.

[0012] Optionally, the first predetermined temperature is greater than the glassy state temperature of the second adhesive layer, and the first predetermined temperature is less than the glassy state temperature of the first adhesive layer, and the second predetermined temperature is the glassy state temperature of the second adhesive layer.

[0013] Optionally, the glassy temperature of the second adhesive layer is at least 10°C lower than the glassy temperature of the first adhesive layer.

[0014] In summary, the LED chip transfer method of this application controls the adhesion of the first and second adhesive layers by changing the phase transition of the first and second adhesive layers through temperature control. This allows for the final transfer of the LED chip from the light-emitting chip module to the driving backplane. Furthermore, because the first and second adhesive layers reach a glassy state when heated, the intermolecular forces within them are significantly greater than the surface adsorption forces on the LED chip. Therefore, no adhesive residue remains on the LED chip during separation, thus improving the overall transfer efficiency. Additionally, the adhesion control method of this application is simple, controlling the adhesion force solely through temperature control.

[0015] Based on the same inventive concept, this application also provides a display panel, which includes a driving backplate and a plurality of LED chips transferred to the driving backplate by the above-described LED chip transfer method.

[0016] In summary, in the display panel of this application, the adhesion of the first adhesive layer and the second adhesive layer is controlled by changing the phase transition of the first adhesive layer and the second adhesive layer through temperature control, thereby completing the final transfer of the LED chip from the light-emitting chip module to the driving backplane, thus improving the overall transfer efficiency of the LED chip.

[0017] Based on the same inventive concept, this application also provides a display device, which includes a support frame and the above-described display panel, wherein the support frame is used to support the display panel.

[0018] In summary, in the display device of this application, the adhesion of the first adhesive layer and the second adhesive layer is controlled by changing the phase transition of the first adhesive layer and the second adhesive layer through temperature control. Heating increases the internal energy of the first adhesive layer and the second adhesive layer, causing them to change from a highly elastic state to a glassy state, thereby completing the final transfer of the LED chip from the light-emitting chip module to the driving backplate. Furthermore, since the first adhesive layer and the second adhesive layer reach the glassy state temperature and change to the glassy state when heated, the intermolecular forces between the internal material molecules are much greater than the surface adsorption force on the LED chip, no adhesive material remains on the LED chip during separation, thereby improving the overall transfer efficiency of the LED chip. Attached Figure Description

[0019] Figure 1 This is a schematic flowchart of an LED chip transfer method disclosed in an embodiment of this application;

[0020] Figure 2 for Figure 1 A schematic diagram of the corresponding structure formed in step S10 of the transfer method shown;

[0021] Figure 3 for Figure 1 A flowchart illustrating step S20 in the transfer method shown;

[0022] Figure 4 for Figure 3 A schematic diagram of the corresponding structure formed in step S21 of the transfer method shown;

[0023] Figure 5 for Figure 3 A schematic diagram of the corresponding structure formed in step S22 of the transfer method shown;

[0024] Figure 6 for Figure 3 A schematic diagram of the corresponding structure formed in step S23 of the transfer method shown;

[0025] Figure 7 for Figure 3 A schematic diagram of the corresponding structure formed in step S24 of the transfer method shown;

[0026] Figure 8 for Figure 1 A flowchart illustrating step S30 in the transfer method shown;

[0027] Figure 9 for Figure 8 A schematic diagram of the corresponding structure formed in step S31 of the transfer method shown;

[0028] Figure 10 for Figure 8A schematic diagram of the corresponding structure formed in step S32 of the transfer method shown;

[0029] Figure 11 for Figure 8 A schematic diagram of the corresponding structure formed in step S33 of the transfer method shown;

[0030] Figure 12 for Figure 8 A schematic diagram of the corresponding structure formed in step S34 of the transfer method shown;

[0031] Figure 13 for Figure 1 A flowchart illustrating step S40 in the transfer method shown;

[0032] Figure 14 for Figure 13 A schematic diagram of the corresponding structure formed in step S41 of the transfer method shown;

[0033] Figure 15 for Figure 13 A schematic diagram of the corresponding structure formed in step S42 of the transfer method shown.

[0034] Explanation of reference numerals in the attached figures:

[0035] 10-Transient substrate;

[0036] 11 - First adhesive layer;

[0037] 20-Light-emitting chip module;

[0038] 21-LED chip;

[0039] 22-Substrate layer;

[0040] 30 - Transfer substrate;

[0041] 31 - Second adhesive layer;

[0042] 50-Drive backplane;

[0043] The steps of the transfer method for S10-S40 LED chips;

[0044] Step S20 in the LED chip transfer method (S21-S24);

[0045] Step S30 in the LED chip transfer method (S31-S34);

[0046] Step S40 in the LED chip transfer method S41-S42. Detailed Implementation

[0047] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0048] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0049] Micro LEDs, as a next-generation display technology, offer advantages over traditional LEDs, including higher brightness, faster response times, lower energy consumption, and longer lifespan. Furthermore, they can be combined with flexible panels to achieve flexible displays, making them widely applicable across various display fields. In recent years, the number of display products based on Micro LED chips has been increasing, such as wearable watches and mobile phone screens. Since display products require high pixel accuracy, improving the transfer yield of Micro LED chips is crucial for enhancing the overall yield of display products. However, the small size of Micro LED chips presents significant technological hurdles for mass production. For example, existing Micro LED chips exhibit relatively small differences in adhesion between the donor and acceptor substrates during transfer, leading to slower transfer speeds, lower transfer yields, and higher transfer costs.

[0050] Based on this, this application aims to provide a transfer solution that can solve the above-mentioned technical problems. It can solve the problems of low overall transfer efficiency, low transfer yield, and high transfer cost caused by the small difference in adhesion between the donor substrate and the recipient substrate during the transfer process of LED chips, which limits the mass transfer efficiency of LED chips. The details will be described in the following embodiments.

[0051] This application provides a detailed description of a method for transferring LED chips, a display panel formed by the transfer method, and a display device having the display panel.

[0052] It should be noted that, in the embodiments of this application, the glassy state refers to the polymer being in a rigid solid state, exhibiting only minimal deformation under external force, similar to glass. Common glassy polymers are plastics, which have low surface adhesion. The elastic state refers to the polymer being in an elastomer state, undergoing significant deformation under stress and recovering its shape after the force is removed. Common elastic polymers are rubbers, which have high adhesion. Vitrification refers to the temperature at which polymer chain segments transition from a frozen state to a freely moving state, thus transforming the glassy state into the elastic state upon heating.

[0053] Please see Figure 1 This is a flowchart illustrating a method for transferring LED chips disclosed in an embodiment of this application. In this embodiment, the transfer method is used for mass transfer of LED chips. During mass transfer, the adhesion force is controlled by adjusting the temperature to alter the phase transition of the adhesive layer, thereby improving the overall transfer efficiency of the LED chips. Please refer to [further details omitted]. Figures 2 to 13 As shown in the embodiments of this application, the LED chip transfer method includes at least the following steps.

[0054] S10. A transient substrate 10 is provided, and a first adhesive layer 11 is disposed on one side of the transient substrate 10.

[0055] Specifically, such as Figure 2 As shown, in this embodiment of the application, a transient substrate 10 is provided, and a first adhesive layer 11 is disposed on one side of the transient substrate 10. The first adhesive layer 11 may be made of a high glass temperature polymer, which is in a glassy state at room temperature and can be converted to a highly elastic state after heating. The adhesiveness of the first adhesive layer 11 in the highly elastic state is greater than that in the glassy state.

[0056] In an exemplary embodiment of this application, the first adhesive layer 11 may be made of polymethyl methacrylate (PMAA), polyethylene naphthalate glycol ester (PEN), polyethylene imine (PEI), and highly crosslinked polydimethylsiloxane (PDMS).

[0057] S20, Provide a light-emitting chip module 20 including multiple LED chips, and transfer the multiple LED chips to the side of the first adhesive layer 11 that is opposite to the transient substrate 10.

[0058] Please see Figure 3 In this embodiment, step S20 includes at least the following steps.

[0059] S21, Provides light-emitting chip module 20.

[0060] Specifically, in the embodiments of this application, such as Figure 4 As shown, a light-emitting chip module 20 is provided. The light-emitting chip module 20 includes a plurality of LED chips 21 and a substrate layer 22. The plurality of LED chips 21 can be arranged in an array on one side of the substrate layer 22 and facing the first adhesive layer 11.

[0061] In this embodiment of the application, the substrate layer 22 may be a sapphire substrate.

[0062] S22. The plurality of LED chips 21 in the light-emitting chip module 20 are bonded to the side of the first adhesive layer 11 that is opposite to the transient substrate 10.

[0063] Specifically, in the embodiments of this application, such as Figure 5 As shown, multiple LED chips 21 in the light-emitting chip module 20 are bonded to the first adhesive layer 11 with their backs to the transient substrate 10 by heating and pressurizing. The heating temperature of the transient substrate 10 and the light-emitting chip module 20 is higher than the glass state temperature of the first adhesive layer 11. At this time, the multiple LED chips 21 in the light-emitting chip module 20 are partially embedded within the first adhesive layer 11.

[0064] In an exemplary embodiment, the plurality of LED chips 21 can be prepared by processes such as epitaxy, photolithography, etching, and cleaning.

[0065] S23. Peel off the substrate layer 22 in the light-emitting chip module 20.

[0066] Specifically, such as Figure 6 As shown in this embodiment, a laser can be used to peel the substrate layer 22 from the light-emitting chip module 20, at which point the plurality of LED chips 21 in the light-emitting chip module 20 are bonded to the first adhesive layer 11. The laser can be a 248nm wavelength laser.

[0067] In this embodiment of the application, when the substrate layer 22 in the light-emitting chip module 20 is laser-peeled from the light-emitting chip module 20, gallium nitride decomposition occurs in the area containing the LED chips, thereby peeling the multiple LED chips 21 off from the substrate layer 22.

[0068] S24. Etch the first adhesive layer 11 located around the LED chip 21 to transfer the plurality of LED chips 21 to the side of the first adhesive layer 11 facing away from the transient substrate 10.

[0069] Specifically, such as Figure 7 As shown in this embodiment, since the multiple LED chips 21 in the light-emitting chip module 20 are attached to the first adhesive layer 11, the first adhesive layer 11 located around the LED chips 21 is etched, leaving only the first adhesive layer 11 within the projection range of the LED chips 21 toward the transient substrate 10. That is, the first adhesive layer 11 located outside the projection range of the LED chips 21 toward the transient substrate 10 is removed by etching, thereby realizing the transfer of the multiple LED chips 21 to the side of the first adhesive layer 11 facing away from the transient substrate 10.

[0070] In this embodiment, since the LED chip 21 and the transient substrate 10 are bonded only through a first adhesive layer 11 located directly below the LED chip 21, the mechanical connection force between the first adhesive layer 11 and the LED chip 21 is reduced. The etching method can be dry etching or wet etching.

[0071] S30. A transfer substrate 30 is provided, and a second adhesive layer 31 is disposed on one side of the transfer substrate 30. At a first predetermined temperature, a plurality of LED chips 21 are transferred to the side of the second adhesive layer 31 facing away from the transfer substrate 30.

[0072] Please refer to the following: Figure 8 In this embodiment, step S30 includes at least the following steps.

[0073] S31. Provide the transfer substrate 30, and provide the second adhesive layer 31 on one side of the transfer substrate 30.

[0074] Specifically, such as Figure 9 As shown, in this embodiment of the application, a transfer substrate 30 is provided, and a second adhesive layer 31 is disposed on one side of the transfer substrate 30. The second adhesive layer 31 may be made of a low glass temperature polymer, which is in a glassy state at room temperature. In one embodiment of the application, the glass temperature of the second adhesive layer 31 is at least 10°C lower than the glass temperature of the first adhesive layer 11. For example, 10°C, 12°C, 15°C, 20°C, or other values. Based on this, the range of materials that can be selected can be expanded.

[0075] In an exemplary embodiment of this application, the second adhesive layer 31 may be made of polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polyvinyl chloride (PVC), poly(1,1-difluoroethylene) (PVDF), and PDMS with low crosslinking degree.

[0076] S32. The plurality of LED chips 21 on the transient substrate 10 are bonded to the side of the second adhesive layer 31 that is opposite to the transfer substrate 30.

[0077] Specifically, in the embodiments of this application, such as Figure 10 As shown, a second adhesive layer 31 is provided on one side of the transfer substrate 30, and multiple LED chips 21 on the transient substrate 10 are bonded to the side of the second adhesive layer 31 facing away from the transfer substrate 30. At this time, the side of the LED chips 21 facing away from the transient substrate 10 is bonded to the side of the second adhesive layer 31 facing away from the transfer substrate 30, that is, multiple LED chips 21 are bonded between the first adhesive layer 11 and the second adhesive layer 31.

[0078] S33. Heat the first adhesive layer 11 and the second adhesive layer 31 to a first predetermined temperature so that the transient substrate 10 and the first adhesive layer 11 are detached from the LED chip 21.

[0079] Specifically, in the embodiments of this application, such as Figure 11 As shown, the first adhesive layer 11 and the second adhesive layer 31 are simultaneously heated to the first predetermined temperature, which is located between the glassy state temperature of the second adhesive layer 31 and the glassy state temperature of the first adhesive layer 11. That is, the first predetermined temperature is greater than the glassy state temperature of the second adhesive layer 31 but less than the glassy state temperature of the first adhesive layer 11. At this time, since the first adhesive layer 11 on the transient substrate 10 is in a glassy state and the second adhesive layer 31 on the transfer substrate 30 is in a highly elastic state, the adhesive force of the first adhesive layer 11 is less than that of the second adhesive layer 31. In particular, the adhesive force between the first adhesive layer 11 on the transient substrate 10 and the plurality of LED chips 21 is reduced, causing the transient substrate 10 and the first adhesive layer 11 to detach from the LED chips 21. At this time, the LED chips 21 are still attached to the side of the second adhesive layer 31 facing away from the transfer substrate 30.

[0080] It should be noted that when the polymer is heated to the glassy state, the molecular chains and segments in the polymer cannot move. The interaction force between the polymer molecules or segments is much greater than the adsorption force of the surface molecules on the LED chip 21. Therefore, no adhesive residue will remain on the LED chip 21 during separation.

[0081] S34. Etch the second adhesive layer 31 located around the LED chip 21 to transfer the plurality of LED chips to the side of the second adhesive layer 31 facing away from the transfer substrate 30.

[0082] Specifically, such as Figure 12 As shown in this embodiment, since multiple LED chips 21 are bonded to the second adhesive layer 31, an etching operation is performed on the second adhesive layer 31 located around the LED chips 21. Only the portion of the second adhesive layer 31 within the projection range of the LED chips 21 facing away from the transient substrate 10 is retained. That is, the portion of the second adhesive layer 31 outside the projection range of the LED chips 21 on the transfer substrate 30 is removed by the etching operation, thereby transferring multiple LED chips 21 to the side of the second adhesive layer 31 facing away from the transfer substrate 30. Simultaneously, since the LED chips 21 and the transfer substrate 30 are bonded only through the second adhesive layer 31 disposed below the LED chips 21, the mechanical connection force between the second adhesive layer 31 and the LED chips 21 is reduced by etching the portion of the second adhesive layer 31 surrounding the LED chips 21.

[0083] In the embodiments of this application, the etching method may be dry etching or wet etching.

[0084] S40. A driving backplate 50 is provided, and a plurality of LED chips 21 on the transfer substrate 30 are transferred to the driving backplate 50 at a second predetermined temperature.

[0085] Please refer to the following: Figure 13 In this embodiment, step S40 includes at least the following steps.

[0086] S41. Provide a driving backplate 50, move the plurality of LED chips 21 on the transfer substrate 30 to the driving backplate 50, and electrically connect them to the driving backplate 50.

[0087] Specifically, in the embodiments of this application, such as Figure 14As shown, a driving backplate 50 is provided to move a plurality of LED chips 21 on the transfer substrate 30 to the driving backplate 50, and the electrodes of the LED chips 21 are electrically connected to corresponding positions (e.g., the positions of the pads) on the driving backplate 50, so that the LED chips 21 and the corresponding positions on the driving backplate 50 undergo metal / eutectic bonding, thereby realizing the connection between the LED chips 21 and the driving backplate 50.

[0088] In this embodiment, the driving backplate 50 is the backplate of the thin film field-effect transistor (TFT), the bonding can be metal bonding or eutectic bonding, and the connection can include mechanical connection and electrical connection.

[0089] S42. Adjust the second adhesive layer 31 to a second predetermined temperature so that the transfer substrate 30 and the second adhesive layer 31 are detached from the plurality of LED chips 21.

[0090] Specifically, in the embodiments of this application, such as Figure 15 As shown, the temperature of the second adhesive layer 31 on the transfer substrate 30 is adjusted to a second predetermined temperature, which is lower than the first predetermined temperature. In this embodiment, the second predetermined temperature may be the glass state temperature of the second adhesive layer 31. Since polymers with low glass state temperatures are in a glassy state at room temperature, the second predetermined temperature is room temperature.

[0091] By cooling the second adhesive layer 31 to the second predetermined temperature, the second adhesive layer 31 can be transformed from a highly elastic state to a glassy state. The adhesion of the second adhesive layer 31 to the LED chip 21 is reduced, and the transfer substrate 30 and the second adhesive layer 31 separate from the multiple LED chips 21. At this time, the multiple LED chips 21 are mechanically and electrically connected to the corresponding positions of the driving backplate 50, thereby realizing the transfer of the multiple LED chips 21 to the driving backplate 50 and their electrical connection with the driving backplate 50.

[0092] In summary, the LED chip transfer method of this application controls the adhesion of the first adhesive layer 11 and the second adhesive layer 31 by changing the phase transition of the first adhesive layer 11 and the second adhesive layer 31 through temperature control. By heating, the internal energy of the first adhesive layer 11 and the second adhesive layer 31 is increased, changing from a highly elastic state to a glassy state, thereby completing the final transfer of the LED chip 21 from the light-emitting chip module 20 to the driving backplate 50. Furthermore, since the first adhesive layer 11 and the second adhesive layer 31 reach the glassy state temperature and change to a glassy state when heated, the interaction force between the internal material molecules is much greater than the surface adsorption force on the LED chip 21. Therefore, no adhesive material remains on the LED chip 21 during separation, thereby improving the overall transfer efficiency of the LED chip. At the same time, the adhesion control method of the LED chip transfer method of this application is simple, and the change of adhesion force can be achieved by controlling the temperature alone.

[0093] This application also provides a display panel, which includes the driving backplate 50 shown in the above embodiments and a plurality of LED chips 21 transferred to the driving backplate 50 by the transfer method described in the above embodiments. In this application embodiment, the plurality of LED chips 21 may include a plurality of red LED chips, a plurality of green LED chips, and a plurality of blue LED chips, wherein the red LED chips, the green LED chips, and the blue LED chips form a plurality of pixel regions. In other embodiments, the display panel may further include a display area and a non-display area, wherein the display area is used for image display, and the non-display area is disposed around the display area and is not used for image display. The display panel may use liquid crystal material as the display medium, but this application is not limited thereto.

[0094] Understandably, the display panel can be used in electronic devices that include functions such as a Personal Digital Assistant (PDA) and / or a music player, such as mobile phones, tablets, and wearable electronic devices with wireless communication capabilities (such as smartwatches). The aforementioned electronic devices can also be other electronic devices, such as laptops with touch-sensitive surfaces (e.g., touch panels). In some embodiments, the electronic device may have communication capabilities, i.e., it can establish communication with a network via 2G (second-generation mobile communication technology), 3G (third-generation mobile communication technology), 4G (fourth-generation mobile communication technology), 5G (fifth-generation mobile communication technology), or W-LAN (wireless local area network) or other communication methods that may emerge in the future. For the sake of simplicity, this application embodiment does not further limit this aspect.

[0095] This application also provides a display device, which includes a support frame and a display panel as described in the above embodiments, wherein the support frame supports the display panel. The display device includes, but is not limited to, any electronic device or component with display function, such as a Mini LED panel, a Micro LED panel, a mobile phone, a tablet computer, a navigator, or a monitor; this application does not impose specific limitations on this. It is understood that the display device may further include: a pixel circuit disposed in the display area within the display panel for displaying images; and a circuit board assembly for providing operating voltage, driving current, and corresponding functional signals.

[0096] It should be understood that the application of this application is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A method for transferring an LED chip, characterized in that, The transfer method includes: A transient substrate is provided, and a first adhesive layer is disposed on one side of the transient substrate; A light-emitting chip module including multiple LED chips is provided, and the multiple LED chips are transferred to the side of the first adhesive layer facing away from the transient substrate; A transfer substrate is provided, and a second adhesive layer is disposed on one side of the transfer substrate. At a first predetermined temperature, a plurality of LED chips are transferred to the side of the second adhesive layer that is opposite to the transfer substrate. A driving backplate is provided, and a plurality of LED chips on the transfer substrate are transferred to the driving backplate at a second predetermined temperature, wherein the second predetermined temperature is lower than the first predetermined temperature; The provision of a light-emitting chip module including multiple LED chips, and the transfer of the multiple LED chips to the side of the first adhesive layer facing away from the transient substrate, includes: Provide the aforementioned light-emitting chip module; Multiple LED chips in the light-emitting chip module are bonded to the side of the first adhesive layer that is opposite to the transient substrate; The substrate layer in the light-emitting chip module is stripped away; The first adhesive layer located around the LED chip is etched to transfer the plurality of LED chips to the side of the first adhesive layer that is opposite to the transient substrate. The provision of a transfer substrate, wherein a second adhesive layer is disposed on one side of the transfer substrate, and transferring a plurality of LED chips to the side of the second adhesive layer opposite to the transfer substrate at a first predetermined temperature includes: The transfer substrate is provided, and the second adhesive layer is disposed on one side of the transfer substrate; The plurality of LED chips on the transient substrate are bonded to the side of the second adhesive layer that is opposite to the transfer substrate; Heating the first adhesive layer and the second adhesive layer to the first predetermined temperature causes the transient substrate and the first adhesive layer to detach from the LED chip; The second adhesive layer located around the LED chip is etched to transfer a plurality of the LED chips to the side of the second adhesive layer that is opposite to the transfer substrate.

2. The LED chip transfer method as described in claim 1, characterized in that, The provision of a driving backplate, and the transfer of a plurality of LED chips on the transfer substrate to the driving backplate at a second predetermined temperature, includes: Provide the driving backplate, move a plurality of LED chips on the transfer substrate to the driving backplate, and electrically connect them to the driving backplate; Adjusting the second adhesive layer to the second predetermined temperature causes the transfer substrate and the second adhesive layer to detach from the plurality of LED chips.

3. The LED chip transfer method as described in claim 1, characterized in that, The first adhesive layer is made of a polymer with a high glass temperature, and the second adhesive layer is made of a polymer with a low glass temperature.

4. The LED chip transfer method as described in claim 1, characterized in that, The light-emitting chip module includes a plurality of LED chips and a substrate layer. The plurality of LED chips are disposed on one side of the substrate layer and facing the first adhesive layer. The substrate layer is a sapphire substrate.

5. The LED chip transfer method as described in claim 1, characterized in that, The first predetermined temperature is greater than the glassy state temperature of the second adhesive layer, and the first predetermined temperature is less than the glassy state temperature of the first adhesive layer, and the second predetermined temperature is the glassy state temperature of the second adhesive layer.

6. The LED chip transfer method according to any one of claims 1-5, characterized in that, The glassy temperature of the second adhesive layer is at least 10°C lower than that of the first adhesive layer.

7. A display panel, characterized in that, It includes a driving backplane and a plurality of LED chips transferred to the driving backplane by the LED chip transfer method as described in any one of claims 1-6.

8. A display device, characterized in that, It includes a support frame and a display panel as described in claim 7, wherein the support frame is used to support the display panel.

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