Display device

Abstract

A first planarization film (19a) is provided on both sides of the outer side of the bending portion (B) in such a manner as to fill both ends of the slit (S) in the width direction and expose the surface of the resin substrate layer (10) in the middle portion between the two ends. On the first planarization film (19a) and the resin substrate layer (10), a plurality of routing wirings (20c) are provided on both sides of the bending portion (B) and the outer side thereof. The routing wirings (20c) extend parallel to each other in a direction intersecting the extension direction of the bending portion (B), are electrically connected to the plurality of display wirings on the display area side, are electrically connected to the plurality of terminals on the terminal side, and are formed on the same layer with the wiring layer from the same material.

Description

Technical Field

[0001] The present invention relates to a display device. Background Art

[0002] In recent years, as a display device to replace liquid crystal display devices, self-luminous organic EL display devices using organic electroluminescence (hereinafter also referred to as "EL") elements have attracted attention. Among these organic EL display devices, a flexible organic EL display device has been proposed in which organic EL elements and the like are formed on a flexible resin substrate layer. Here, in the organic EL display device, it is desired to provide a frame area around the display area where an image is displayed and to reduce the frame area, so-called narrow frame. Moreover, in a flexible organic EL display device, if the frame area is bent in order to reduce the area occupied by the frame area in a top view, the wiring arranged in the frame area may be disconnected.

[0003] For example, Patent Document 1 discloses a flexible display device that forms a curved hole to remove portions of a buffer film, a gate insulating film, and an interlayer insulating film corresponding to a curved region, thereby preventing disconnection of wiring.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2014-232300 Summary of the Invention

[0007] Technical problems to be solved by the present invention

[0008] However, in flexible organic EL display devices, inorganic insulating films such as a base coating film, a gate insulating film, and an interlayer insulating film are provided on the resin substrate layer. Therefore, in order to prevent the disconnection of the multiple routing wires arranged in the frame area, the following structure has been proposed: the inorganic insulating film in the bent portion (bend portion) of the frame area is removed, a flattening film is filled in the removed portion, and routing wires are formed on the flattening film. However, even if the inorganic insulating film is removed from the bent portion, a flattening film is filled in the removed portion, and routing wires are formed on the flattening film, if the organic EL display device is bent 180° at the bent portion with a curvature radius of, for example, about 0.3 mm to 1.0 mm, cracks may occur in the flattening film, and the routing wires on the flattening film may disconnect.

[0009] The present invention has been made in view of the above-mentioned points, and an object of the present invention is to suppress the occurrence of cracks in a planarizing film and to suppress disconnection of routing wiring in a bent portion.

[0010] Technical solutions to technical problems

[0011] In order to achieve the above-mentioned object, the display device of the present invention comprises: a resin substrate layer; a thin film transistor layer, which is arranged on the resin substrate layer and is stacked with an inorganic insulating film, a first planarizing film, a wiring layer, and a second planarizing film in sequence; and a light-emitting element layer, which is arranged on the thin film transistor layer and corresponds to a plurality of sub-pixels constituting a display area and is stacked with a plurality of first electrodes, a plurality of light-emitting functional layers, and a common second electrode in sequence; a frame area is provided around the display area, a terminal portion is provided at an end of the frame area, a bent portion is provided between the display area and the terminal portion in a manner extending in one direction, a plurality of display wirings are provided in the display area in a manner extending parallel to each other, and a plurality of terminals are provided on the terminal portion along the extending direction of the bent portion, On the inorganic insulating film, at the bending portion, a slit is provided in a manner extending in the direction in which the bending portion extends and exposing the surface of the resin substrate layer. On both sides of the outer side of the bending portion, the first planarizing film is provided in a manner filling both end portions in the width direction of the slit and exposing the surface of the resin substrate layer in the middle portion between the two end portions. On the first planarizing film and the resin substrate layer, a plurality of routing wirings are provided at the bending portion and on both sides of the outer side of the bending portion. The plurality of routing wirings extend parallel to each other in a direction intersecting the extending direction of the bending portion, are electrically connected to the plurality of display wirings on the display area side, are electrically connected to the plurality of terminals on the terminal portion side, and are formed of the same material and on the same layer as the wiring layer.

[0012] In addition, the display device of the present invention comprises: a resin substrate layer; a thin film transistor layer, which is provided on the resin substrate layer and is stacked with an inorganic insulating film, a wiring layer and a planarizing film in this order; a light-emitting element layer, which is provided on the thin film transistor layer and corresponds to a plurality of sub-pixels constituting a display area and is stacked with a plurality of first electrodes, a plurality of light-emitting functional layers and a common second electrode in this order; a sealing film, which is provided in a manner covering the light-emitting element layer and is stacked with a first inorganic sealing film, an organic sealing film and a second inorganic sealing film in this order; and a touch panel layer, which is provided on the sealing film and is stacked with a first touch wiring layer, an interlayer insulating film and a second touch wiring layer in this order, a frame area is provided around the display area, a terminal portion is provided at an end of the frame area, a bending portion is provided between the display area and the terminal portion in a manner extending in one direction, and a plurality of terminals are provided in the display area in a manner extending parallel to each other. A plurality of display wirings, a plurality of terminals are provided on the terminal portion along the extension direction of the bending portion, a slit is provided on the inorganic insulating film at the bending portion in a manner extending in the extension direction of the bending portion and exposing the surface of the resin substrate layer, the planarization film is provided on both sides of the outer side of the bending portion in a manner filling both end portions in the width direction of the slit and exposing the surface of the resin substrate layer in the middle portion between the two end portions, a plurality of routing wirings are provided on the planarization film and the resin substrate layer at the bending portion and on both sides of the outer side of the bending portion, the plurality of routing wirings extend parallel to each other in a direction intersecting the extension direction of the bending portion, are electrically connected to the plurality of display wirings on the display area side, are electrically connected to the plurality of terminals on the terminal portion side, and are formed on the same layer with the same material as the first touch wiring layer or the second touch wiring layer.

[0013] In addition, the display device of the present invention comprises: a resin substrate layer; a thin film transistor layer, which is arranged on the resin substrate layer and is stacked with an inorganic insulating film, a wiring layer and a planarizing film in sequence; and a light-emitting element layer, which is arranged on the thin film transistor layer, corresponds to a plurality of sub-pixels constituting a display area, and is stacked with a plurality of first electrodes, a plurality of light-emitting functional layers and a common second electrode in sequence; a frame area is provided around the display area, a terminal portion is provided at an end of the frame area, a bending portion is provided between the display area and the terminal portion in a manner extending in one direction, a plurality of display wirings are provided in the display area in a manner extending parallel to each other, a plurality of terminals are provided on the terminal portion along the extending direction of the bending portion, and a plurality of terminals are provided on the inorganic insulating layer. On the film, at the bending portion, a slit is provided in a manner extending in the direction in which the bending portion extends and exposing the surface of the resin substrate layer. On both sides of the outer side of the bending portion, another planarizing film is provided in a manner filling both end portions in the width direction of the slit and exposing the surface of the resin substrate layer in the middle portion between the two end portions. On the other planarizing film and the resin substrate layer, a plurality of routing wirings are provided on the bending portion and on both sides of the outer side of the bending portion. The plurality of routing wirings extend parallel to each other in a direction intersecting the extending direction of the bending portion, are electrically connected to the plurality of display wirings on the display area side, are electrically connected to the plurality of terminals on the terminal portion side, and are formed on the same layer with the wiring layer using the same material.

[0014] Beneficial effects

[0015] According to the present invention, the occurrence of cracks in the planarizing film can be suppressed, and disconnection of the routing wiring in the bent portion can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a plan view schematically showing the configuration of an organic EL display device according to the first embodiment of the present invention.

[0017] Figure 2 It is a plan view of the display area of ​​the organic EL display device according to the first embodiment of the present invention.

[0018] Figure 3 It is along Figure 1 A cross-sectional view of the display area of ​​an organic EL display device taken along line III-III.

[0019] Figure 4 This is an equivalent circuit diagram of a thin film transistor layer constituting the organic EL display device according to the first embodiment of the present invention.

[0020] Figure 5It is a cross-sectional view showing an organic EL layer constituting the organic EL display device according to the first embodiment of the present invention.

[0021] Figure 6 It is along Figure 1 A cross-sectional view of an organic EL display device taken along line VI-VI.

[0022] Figure 7 It is along Figure 1 A cross-sectional view of the frame region of the organic EL display device taken along line VII-VII.

[0023] Figure 8 It is along Figure 1 A cross-sectional view of the bent portion of the organic EL display device taken along line VIII-VIII.

[0024] Figure 9 This is a cross-sectional view of the frame region of the organic EL display device according to the second embodiment of the present invention, which is equivalent to Figure 7 Picture.

[0025] Figure 10 This is a cross-sectional view of a bent portion of an organic EL display device according to a second embodiment of the present invention, which is equivalent to Figure 8 Picture.

[0026] Figure 11 This is a cross-sectional view of the frame region of the organic EL display device according to the third embodiment of the present invention, which is equivalent to Figure 7 Picture.

[0027] Figure 12 is a cross-sectional view of a display region of an organic EL display device according to a fourth embodiment of the present invention, which is equivalent to Figure 3 Picture.

[0028] Figure 13 This is a cross-sectional view of the frame region of the organic EL display device according to the fourth embodiment of the present invention, which is equivalent to Figure 7 Picture.

[0029] Figure 14 This is a cross-sectional view of a frame region of a modified example of the organic EL display device according to the fourth embodiment of the present invention, which is equivalent to Figure 7 Picture.

[0030] Figure 15 is a cross-sectional view of a display region of an organic EL display device according to a fifth embodiment of the present invention, which is equivalent to Figure 3 Picture.

[0031] Figure 16 is a cross-sectional view of a frame region of an organic EL display device according to a fifth embodiment of the present invention, which is equivalent to Figure 7 Picture.

[0032] Figure 17 is a cross-sectional view of a display region of an organic EL display device according to a sixth embodiment of the present invention, which is equivalent to Figure 3 Picture.

[0033] Figure 18 is a cross-sectional view of the frame region of the organic EL display device according to the sixth embodiment of the present invention, which is equivalent to Figure 7 Picture.

[0034] Figure 19 This is a cross-sectional view showing a portion of the manufacturing process of the organic EL display device according to the sixth embodiment of the present invention, which is equivalent to Figure 7 Picture. DETAILED DESCRIPTION

[0035] Hereinafter, embodiments of the present invention will be described in detail based on the drawings. However, the present invention is not limited to the following embodiments.

[0036] First Implementation Method

[0037] Figures 1 to 8 The first embodiment of the display device of the present invention is shown. In the following embodiments, an organic EL display device including an organic EL element is exemplified as a display device including a light-emitting element. Figure 1 : is a plan view showing a schematic configuration of an organic EL display device 50a according to this embodiment. Figure 2 : is a top view of the display area D of the organic EL display device 50a. Figure 3 It is along Figure 1 sectional view of the display region D of the organic EL display device 50a along line III-III. Figure 4 : is an equivalent circuit diagram of the thin film transistor layer 30 constituting the organic EL display device 50a. Figure 5 : is a cross-sectional view showing the organic EL layer 33 constituting the organic EL display device 50a. Figure 6 It is along Figure 1 A cross-sectional view of an organic EL display device 50a taken along line VI-VI. Figure 7 It is along Figure 1 A cross-sectional view of the frame region F of the organic EL display device 50a taken along line VII-VII in FIG. Figure 8 It is along Figure 1 A cross-sectional view of a bent portion B of the organic EL display device 50a taken along line VIII-VIII in FIG.

[0038] like Figure 1As shown, the organic EL display device 50a includes, for example, a rectangular display area D for displaying images, and a frame area F provided in a frame shape around the display area D. In this embodiment, a rectangular display area D is exemplified, but this rectangular shape also includes substantially rectangular shapes such as shapes with arc-shaped sides, shapes with arc-shaped corners, and shapes with notches on a portion of the sides.

[0039] like Figure 2 As shown in FIG. 1 , in the display area D, a plurality of sub-pixels P are arranged in a matrix. Figure 2 As shown, for example, a sub-pixel P having a red light-emitting region Er for displaying red, a sub-pixel P having a green light-emitting region Eg for displaying green, and a sub-pixel P having a blue light-emitting region Eb for displaying blue are arranged adjacent to each other. Furthermore, in the display area D, for example, three adjacent sub-pixels P having a red light-emitting region Er, a green light-emitting region Eg, and a blue light-emitting region Eb constitute one pixel.

[0040] In the border area F Figure 1 The lower end portion of the terminal portion T is set to extend in one direction (X direction in the figure). Figure 1 As shown in FIG, a plurality of terminals C are provided on the terminal portion T along the X direction in the figure. Figure 1 As shown, between the display area D and the terminal portion T, the X direction in the figure is used as the bending axis, and a bent portion B that can be bent 180 degrees (U-shaped) with a curvature radius of about 0.3mm to 1.0mm is provided in a manner extending in one direction (the X direction in the figure). In addition, in the frame area F, the first flattening film 19a and the second flattening film 21a described later are provided. Figure 1 and Figure 6 As shown in FIG. 1 , a groove G having a substantially C-shape when viewed from above is provided so as to penetrate the first planarizing film 19a and the second planarizing film 21a. Figure 1 As shown, the groove G is provided in a substantially C-shape so as to be open on the terminal portion T side in a plan view.

[0041] like Figure 3 As shown, the organic EL display device 50a includes: a resin substrate layer 10; a thin film transistor (hereinafter also referred to as "TFT") layer 30 provided on the resin substrate layer 10; an organic EL element layer 35 as a light-emitting element layer provided on the TFT layer 30; and a sealing film 40 provided in a manner covering the organic EL element layer 35.

[0042] like Figure 3 、 Figure 6 、 Figure 7 and Figure 8 As shown, the resin substrate layer 10 includes a first resin substrate layer 6 provided on the side opposite to the TFT layer 30, a second resin substrate layer 8 provided on the TFT layer 30 side, and an intra-substrate inorganic insulating film 7 provided between the first resin substrate layer 6 and the second resin substrate layer 8. Here, the first resin substrate layer 6 and the second resin substrate layer 8 are composed of, for example, a polyimide resin. Furthermore, the intra-substrate inorganic insulating film 7, the base coat film 11 (described later), the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are composed of, for example, a single layer or a stacked layer of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.

[0043] like Figure 3 As shown, the TFT layer 30 includes: a base coat film 11 provided on the resin substrate layer 10, a plurality of first TFTs 9a provided on the base coat film 11, and a plurality of second TFTs 9b (see FIG. Figure 4 ), multiple third TFTs 9c and multiple capacitors 9d, and a first planarizing film 19a and a second planarizing film 21a sequentially provided on each first TFT 9a, each second TFT 9b, each third TFT 9c and each capacitor 9d.

[0044] In the TFT layer 30, as Figure 3 As shown, a base coating film 11, semiconductor pattern layers such as the semiconductor layer 12a described later, a gate insulating film 13, a first wiring layer such as the gate line 14g described later, a first interlayer insulating film 15, a second wiring layer such as the upper conductive layer 16c described later, a second interlayer insulating film 17, a third wiring layer such as the source line 18f described later, a first planarizing film 19a, a fourth wiring layer such as the power line 20a, and a second planarizing film 21a are sequentially stacked on the resin substrate layer 10.

[0045] In the TFT layer 30, as Figure 2 and Figure 4 As shown in FIG. 1 , a plurality of gate lines 14g are provided as a first wiring layer in a manner extending parallel to each other in the horizontal direction in the figure. Figure 2 and Figure 4 As shown in FIG, a plurality of light emitting control lines 14e are provided as the first wiring layer in a manner extending in parallel with each other in the horizontal direction in the figure. Figure 2 As shown, each light emitting control line 14e is arranged adjacent to each gate line 14g. Figure 2 and Figure 4 As shown in FIG. 1 , a plurality of source lines 18f are provided as the third wiring layer in a manner extending parallel to each other in the longitudinal direction of the figure. Figure 1 and Figure 3As shown, the power supply line 20a is provided as a fourth wiring layer in a lattice shape between the first planarizing film 19a and the second planarizing film 21a. Figure 4 As shown, in each sub-pixel P, a first TFT 9a, a second TFT 9b, a third TFT 9c and a capacitor 9d are provided.

[0046] like Figure 4 As shown, the first TFT 9a is electrically connected to the corresponding gate line 14g, source line 18f and second TFT 9b in each sub-pixel P. Figure 3 As shown, the first TFT 9a includes a semiconductor layer 12a, a gate insulating film 13, a gate electrode 14a, a first interlayer insulating film 15, a second interlayer insulating film 17, a source electrode 18a, and a drain electrode 18b, which are sequentially provided on a base coat film 11. Figure 3 As shown in FIG. 1 , the semiconductor layer 12a is provided in an island shape on the base coat film 11 and has a channel region, a source region, and a drain region as described later. Figure 3 As shown in FIG. 1 , the gate insulating film 13 is provided so as to cover the semiconductor layer 12a. Figure 3 As shown in FIG. 1 , the gate electrode 14a is provided on the gate insulating film 13 in such a manner as to overlap with the channel region of the semiconductor layer 12a. Figure 3 As shown in FIG. 1 , the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided so as to cover the gate electrode 14a. Figure 3 As shown in FIG. 1 , the source electrode 18a and the drain electrode 18b are provided in a manner separated from each other on the second interlayer insulating film 17. Figure 3 As shown, the source electrode 18 a and the drain electrode 18 b are electrically connected to the source region and the drain region of the semiconductor layer 12 a via contact holes formed in the stacked film of the gate insulating film 13 , the first interlayer insulating film 15 , and the second interlayer insulating film 17 .

[0047] like Figure 4 As shown, the second TFT 9b is electrically connected to the corresponding first TFT 9a, the power line 20a, and the third TFT 9c in each sub-pixel P. The second TFT 9b has substantially the same structure as the first TFT 9a and the third TFT 9c described later.

[0048] like Figure 4 As shown, the third TFT 9c is electrically connected to the corresponding second TFT 9b, the organic EL layer 33 (contacting the first electrode 31a) and the light emission control line 14e in each sub-pixel P. Figure 3As shown, the third TFT 9c includes a semiconductor layer 12b, a gate insulating film 13, a gate electrode 14b, a first interlayer insulating film 15, a second interlayer insulating film 17, a source electrode 18c, and a drain electrode 18d, which are sequentially provided on the base coating film 11. Figure 3 As shown in FIG. 1 , the semiconductor layer 12b is provided in an island shape on the base coat film 11 and has a channel region, a source region, and a drain region similarly to the semiconductor layer 12a. Figure 3 As shown in FIG. 1 , the gate insulating film 13 is provided in a manner covering the semiconductor layer 12 b. Figure 3 As shown in FIG. 1 , the gate electrode 14b is provided on the gate insulating film 13 in such a manner as to overlap with the channel region of the semiconductor layer 12b. Figure 3 As shown in FIG. 1 , the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided so as to cover the gate electrode 14b. Figure 3 As shown in FIG. 1 , the source electrode 18c and the drain electrode 18d are provided in a manner separated from each other on the second interlayer insulating film 17. Figure 3 As shown, the source electrode 18 c and the drain electrode 18 d are electrically connected to the source region and the drain region of the semiconductor layer 12 b via contact holes formed in the stacked film of the gate insulating film 13 , the first interlayer insulating film 15 , and the second interlayer insulating film 17 .

[0049] In this embodiment, the first TFT 9a, the second TFT 9b, and the third TFT 9c are exemplified as top-gate types. However, the first TFT 9a, the second TFT 9b, and the third TFT 9c may be bottom-gate types.

[0050] like Figure 4 As shown, the capacitor 9d is electrically connected to the corresponding first TFT 9a and the power supply line 20a in each sub-pixel P. Figure 3 As shown, capacitor 9d includes a lower conductive layer 14c provided as a first wiring layer, a first interlayer insulating film 15 provided to cover lower conductive layer 14c, and an upper conductive layer 16c provided as a second wiring layer on first interlayer insulating film 15 so as to overlap lower conductive layer 14c. Upper conductive layer 16c is electrically connected to power supply line 20a via contact holes (not shown) formed in second interlayer insulating film 17 and first planarizing film 19a.

[0051] The first planarization film 19a and the second planarization film 21a have a flat surface in the display area D, and are made of, for example, an organic resin material such as polyimide resin, acrylic resin, or a polysiloxane-based SOG (spin on glass) material. Figure 3As shown, in addition to the above-mentioned power supply line 20 a , a relay electrode 20 b is provided between the first planarizing film 19 a and the second planarizing film 21 a as a fourth wiring layer.

[0052] like Figure 3 As shown, the organic EL element layer 35 includes a plurality of first electrodes 31 a , an edge cover 32 a , a plurality of organic EL layers 33 , and a second electrode 34 , which are sequentially stacked on the TFT layer 30 .

[0053] like Figure 3 As shown, a plurality of first electrodes 31a are arranged in a matrix on the second planarization film 21a in a manner corresponding to a plurality of sub-pixels P. Figure 3 As shown, the first electrode 31a is electrically connected to the drain electrode 18d of each third TFT 9c via a contact hole formed in the first planarizing film 19a, the relay electrode 20b, and a contact hole formed in the second planarizing film 21a. Furthermore, the first electrode 31a has the function of injecting holes into the organic EL layer 33. To improve the efficiency of hole injection into the organic EL layer 33, it is preferable to form the first electrode 31a from a material with a high work function. Examples of materials for the first electrode 31a include metal materials such as silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), and tin (Sn). Alternatively, the material for the first electrode 31a may be an alloy such as astatine (At) / astatine oxide (AtO2). Furthermore, the material constituting the first electrode 31a may be, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO). Furthermore, the first electrode 31a may be formed by stacking multiple layers composed of the above materials. Examples of compound materials with a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO). Specifically, the first electrode 31a may be composed of, for example, a laminated film comprising an ITO film having a thickness of approximately 10 nm, a silver film having a thickness of approximately 100 nm, and an ITO film having a thickness of approximately 10 nm, stacked in this order.

[0054] like Figure 3 As shown, the edge cover 32a is provided in a lattice pattern to cover the peripheral edge portions of each first electrode 31a. Here, the edge cover 32a is made of an organic resin material such as polyimide resin or acrylic resin with a thickness of about 2.5 μm, or a polysiloxane-based SOG material.

[0055] like Figure 3As shown, a plurality of organic EL layers 33 are arranged on each first electrode 31a and are arranged in a matrix as a light emitting functional layer in a manner corresponding to a plurality of sub-pixels P. Figure 5 As shown, each organic EL layer 33 includes a hole injection layer 1 , a hole transport layer 2 , a light emitting layer 3 , an electron transport layer 4 , and an electron injection layer 5 , which are sequentially provided on the first electrode 31 a .

[0056] The hole injection layer 1, also known as an anode buffer layer, has the function of bringing the energy levels of the first electrode 31 a and the organic EL layer 33 closer together, thereby improving the efficiency of hole injection from the first electrode 31 a to the organic EL layer 33. Examples of materials constituting the hole injection layer 1 include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives.

[0057] The hole transport layer 2 has a function of improving the efficiency of hole transport from the first electrode 31 a to the organic EL layer 33. Examples of materials constituting the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylene vinylene, polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, amorphous hydrogenated silicon carbide, zinc sulfide, and zinc selenide.

[0058] The light emitting layer 3 is a region where holes and electrons are injected from the first electrode 31a and the second electrode 34 and recombine when voltage is applied thereto. The light emitting layer 3 is formed of a material with high light emission efficiency. In addition, as materials constituting the light-emitting layer 3, for example, metal hydroxyquinolinone (oxinoid) compounds [8-hydroxyquinoline metal complexes], naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinylacetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, bis(styryl)benzene derivatives, tristyrylbenzene derivatives, perylene derivatives, pyrene ketone derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, acridine derivatives, phenoxazone, quinacridone derivatives, rubrene, poly(p-phenylene vinylene), or polysilanes, etc. can be listed.

[0059] The electron transport layer 4 has the function of efficiently transferring electrons to the light-emitting layer 3. Examples of materials constituting the electron transport layer 4 include organic compounds such as oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, fluorenone derivatives, silole derivatives, and metalloquinolone (8-hydroxyquinoline metal complex) compounds.

[0060] The electron injection layer 5 has the function of bringing the energy levels of the second electrode 34 and the organic EL layer 33 closer together, thereby improving the efficiency of electron injection from the second electrode 34 to the organic EL layer 33. This function can reduce the driving voltage of the organic EL element. The electron injection layer 5 is also called a cathode buffer layer. Examples of materials constituting the electron injection layer 5 include inorganic alkaline compounds such as lithium fluoride (LiF), magnesium fluoride (MgF2), calcium fluoride (CaF2), strontium fluoride (SrF2), and barium fluoride (BaF2), aluminum oxide (Al2O3), and strontium oxide (SrO).

[0061] The second electrode 34 is provided on the plurality of organic EL layers 33 in a manner shared by the plurality of sub-pixels P, that is, as shown in FIG. Figure 3As shown, the second electrode 34 is provided so as to cover each organic EL layer 33 and the edge cover 32a. Furthermore, the second electrode 34 has the function of injecting electrons into the organic EL layer 33. Furthermore, to improve the efficiency of electron injection into the organic EL layer 33, the second electrode 34 is preferably formed of a material with a low work function. Examples of materials for the second electrode 34 include silver (Ag), aluminum (Al), vanadium (V), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), and lithium fluoride (LiF). Alternatively, the second electrode 34 may be formed of an alloy such as magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / astatine oxide (AtO2), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), or lithium fluoride (LiF) / calcium (Ca) / aluminum (Al). Alternatively, the second electrode 34 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO). Alternatively, the second electrode 34 may be formed by stacking multiple layers of the aforementioned materials. Examples of materials with a low work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), and lithium fluoride (LiF) / calcium (Ca) / aluminum (Al).

[0062] like Figure 3 As shown, the sealing film 40 includes a first inorganic sealing film 36, an organic sealing film 37, and a second inorganic sealing film 38, which are provided to cover the second electrode 34 and are sequentially stacked on the second electrode 34. The sealing film 40 protects the organic EL layer 33 of the organic EL element layer 35 from moisture and oxygen. The first and second inorganic sealing films 36, 38 are composed of, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film. The organic sealing film 37 is composed of, for example, an organic resin material such as an acrylic resin, an epoxy resin, a silicone resin, a polyurea resin, a parylene resin, a polyimide resin, or a polyamide resin.

[0063] In addition, if Figure 1 As shown, the organic EL display device 50a includes a first barrier wall Wa provided in a frame region F outside the groove G to surround the display region D, and a second barrier wall Wb provided in a frame around the first barrier wall Wa.

[0064] like Figure 6As shown, the first barrier Wa comprises a lower resin layer 21b formed from the same material and on the same layer as the second planarizing film 21a; and an upper resin layer 32c formed from the same material and on the same layer as the edge cover 32a, provided on the lower resin layer 21b with a connection wiring 31b interposed therebetween. The connection wiring 31b and the first electrode 31a are formed from the same material and on the same layer. Furthermore, the first outer barrier Wa is configured to overlap the peripheral edge of the organic sealing film 37 of the sealing film 40, thereby preventing the spread of ink forming the organic sealing film 37.

[0065] like Figure 6 As shown, the second barrier wall Wb includes: a lower resin layer 21c formed on the same layer with the same material as the second planarizing film 21a; and an upper resin layer 32d arranged on the lower resin layer 21c with the connecting wiring 31b interposed therebetween and formed on the same layer with the edge cover 32a with the same material.

[0066] In addition, if Figure 1 As shown, the organic EL display device 50a includes a first frame wiring 18h in the frame region F. The first frame wiring 18h is provided in a frame shape as a third wiring layer inside the groove G, and both ends of the opening of the groove G extend to the terminal portion T. Here, the first frame wiring 18h is configured to be electrically connected to the power line 20a of the display region D via a contact hole formed in the first planarization film 19a, and a high voltage (ELVDD) is input to the terminal portion T.

[0067] In addition, if Figure 1 As shown, the organic EL display device 50a includes a second frame wiring 18i in the frame region F. The second frame wiring 18i is provided as a third wiring layer outside the groove G in a substantially C-shape, with both ends extending to the terminal portion T. Figure 6 As shown, the second frame wiring 18i is electrically connected to the second electrode 34 of the display area D via the connection wiring 31b provided in the groove G, and a low power supply voltage (ELVSS) is input to the terminal portion T.

[0068] In addition, if Figure 6 As shown, the organic EL display device 50a includes a plurality of peripheral photo spacers 32b in the frame region F. The peripheral photo spacers 32b are provided in an island shape so as to protrude upward from both edges of the groove G. The peripheral photo spacers 32b and the edge cover 32a are formed of the same material and in the same layer.

[0069] In addition, if Figure 7 As shown, in the bent portion B of the frame region F of the organic EL display device 50a, a slit S is provided in the laminated film of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Figure 7As shown, the slit S is formed into a groove shape penetrating the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 so as to expose the surface of the resin substrate layer 10 along the extending direction of the bent portion B. Figure 7 As shown in FIG, the slits S are also provided on the surface layer (depth of about 0.5 μm to 3.0 μm) of the second resin substrate layer 8 (thickness of about 6 μm). Figure 7 As shown, both edges of the laminated film of the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 formed with the slit S are formed so as to protrude inwardly from the side wall of the surface layer of the second resin substrate layer 8 by, for example, about 0.5 μm. Figure 7 As shown, the first planarizing film 19a disposed in the display area D is provided so as to fill the two ends of the slit S in the width direction on both sides of the outer side of the bent portion B and expose the surface of the resin substrate layer 10 in the middle portion between the two ends. Figure 7 As shown, the first planarizing film 19a is provided on the second resin substrate layer 8 side so as to fill the both ends of the width direction of the slit S and thereby fill the eaves-like portion of both edges of the laminated film of the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 in which the slit S is formed. Figure 7 As shown, the side surface of the first planarizing film 19a on the side of the bent portion B is inclined in a forward tapered shape so as to protrude toward the resin substrate layer 10. In addition, the angle θ between the side surface of the first planarizing film 19a on the side of the bent portion B and the surface of the resin substrate layer 10 (see Figure 7 ) is less than 20°. In addition, when the angle θ between the side surface of the bent portion B of the first planarizing film 19a and the surface of the resin substrate layer 10 is larger than 20°, when forming the routing wiring 20c described later, the metal film constituting the routing wiring 20c is likely to remain between adjacent routing wirings 20c, and therefore, adjacent routing wirings 20c may be short-circuited.

[0070] In addition, if Figure 7 and Figure 8 As shown, the organic EL display device 50a includes, on both sides of the bend B and its outer sides, a plurality of routing wires 20c provided on the first planarizing film 19a and the resin substrate layer 10 so as to extend parallel to each other in a direction perpendicular to the extending direction of the bend B, a plurality of protective insulating layers 21d provided so as to respectively cover the plurality of routing wires 20c, and a reinforcing resin layer 46 provided so as to cover the plurality of protective insulating layers 21d. Figure 7As shown, on the surface of the organic EL display device 50a on the side of the first resin substrate layer 6, except for the bent portion B, a protective sheet 47 is provided. In addition, the interval between the left and right protective sheets 47 is, for example, about 2.0 mm in width, and the distance between the end portion of the protective sheet 47 and the slit S is, for example, about 200 μm.

[0071] The lead wiring 20c is provided as the fourth wiring layer and is formed of the same material as the power supply line 20a on the same layer. Here, the lead wiring 20c is electrically connected to display wirings such as the source line 18f on the display area D side and is electrically connected to the terminal C on the terminal portion T side.

[0072] The protective insulating layer 21d is formed of the same material as the second planarization film 21a on the same layer.

[0073] The reinforcing resin layer 46 is constituted of, for example, an acrylic resin having a thickness of about 100 μm.

[0074] In the above-described organic EL display device 50a, in each sub-pixel P, by inputting a gate signal to the first TFT 9a via the gate line 14g, the first TFT 9a becomes conductive, and a predetermined voltage corresponding to the source signal is written to the gate of the second TFT 9b and the capacitor 9d via the source line 18f. When a light emission control signal is input to the third TFT 9c via the light emission control line 14e, the third TFT ⑨c becomes conductive, and a current corresponding to the gate voltage of the second TFT 9b is supplied from the power supply line 20a to the organic EL layer 33, so that the light emitting layer 3 of the organic EL layer 33 emits light and image display is performed. In addition, in the organic EL display device 50a, even when the first TFT 9a becomes non-conductive, the gate voltage of the second TFT 9b is held by the capacitor 9d, so that the light emission of the light emitting layer 3 is maintained in each sub-pixel P until the gate signal of the next frame is input.

[0075] Next, a method for manufacturing the organic EL display device 50a of the present embodiment will be described. In addition, the method for manufacturing the organic EL display device 50a of the present embodiment includes a TFT layer forming step, an organic EL element layer forming step, and a sealing film forming step.

[0076] <TFT layer forming step>

[0077] First, for example, a non-photosensitive polyimide resin (having a thickness of about 6 μm) is coated on a glass substrate, and the coated film is pre-baked and post-baked to form the first resin substrate layer 6.

[0078] Next, an inorganic insulating film (about 500 nm thick) such as a silicon oxide film is formed on the substrate surface having the first resin substrate layer 6 formed thereon by, for example, plasma CVD (chemical vapor deposition) to form an intra-substrate inorganic insulating film 7 .

[0079] Furthermore, after coating the substrate surface with the inorganic insulating film 7 formed therein, for example, a non-photosensitive polyimide resin (thickness of about 6 μm), the coated film is pre-baked and post-baked to form a second resin substrate layer 8 and a resin substrate layer 10.

[0080] Thereafter, a silicon oxide film (about 500 nm thick) and a silicon nitride film (about 100 nm thick) are sequentially formed on the substrate surface having the resin substrate layer 10 formed thereon by, for example, plasma CVD, thereby forming the base coat film 11 .

[0081] Next, a plasma CVD method is used to form, for example, an amorphous silicon film (thickness of about 50 nm) on the surface of the substrate on which the base coating film 11 is formed. After the amorphous silicon film is crystallized by laser annealing or the like to form a semiconductor film of a polycrystalline silicon film, the semiconductor film is patterned to form a semiconductor layer 12a, etc.

[0082] Then, an inorganic insulating film (about 100 nm) such as a silicon oxide film is formed on the substrate surface having the semiconductor layer 12 a and the like formed thereon by plasma CVD, for example, to form the gate insulating film 13 so as to cover the semiconductor layer 12 a and the like.

[0083] Furthermore, a molybdenum film (thickness of about 250 nm) is formed on the substrate surface having the gate insulating film 13 formed thereon by, for example, sputtering, and then patterned to form a first wiring layer such as the gate line 14g.

[0084] Next, using the first wiring layer as a mask, impurity ions are doped to form an intrinsic region and a conductor region in the semiconductor layer 12 a and the like.

[0085] Then, a silicon nitride film (about 100 nm thick) is formed on the substrate surface on which the semiconductor layer 12 a having the intrinsic region and the conductor region is formed, for example, by plasma CVD, thereby forming the first interlayer insulating film 15 .

[0086] Next, a molybdenum film (about 250 nm thick) is formed on the substrate surface having the first interlayer insulating film 15 formed thereon by, for example, sputtering, and then patterned to form a second wiring layer such as the upper conductive layer 16 c .

[0087] Furthermore, a silicon oxide film (about 300 nm thick) and a silicon nitride film (about 200 nm thick) are sequentially formed on the substrate surface having the second wiring layer formed thereon by plasma CVD, for example, to form a second interlayer insulating film 17 .

[0088] Then, the gate insulating film 13 , the first interlayer insulating film 15 , and the second interlayer insulating film 17 are patterned to form contact holes.

[0089] Furthermore, in the bent portion B, dry etching using SF6 gas, CF4 gas, O2 gas, Ar gas, or the like is performed to remove the laminated film of the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17, thereby forming a slit S in the laminated film of the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. At this time, the surface layer of the second resin substrate layer 8 exposed through the slit S is also removed by dry etching.

[0090] Then, on the surface of the substrate with the slit S formed, a titanium film (thickness of about 50 nm), an aluminum film (thickness of about 600 nm) and a titanium film (thickness of about 50 nm) are formed in sequence, for example by sputtering, and then these metal stacked films are patterned to form a third wiring layer such as the source line 18f.

[0091] Furthermore, after a photosensitive polyimide resin (thickness of about 2.5 μm) is coated on the surface of the substrate on which the above-mentioned third wiring layer is formed, for example by spin coating or slit coating, the coating film is pre-baked, exposed, developed and post-baked to form a first planarizing film 19a, etc.

[0092] Then, for example, by sputtering, a titanium film (thickness of about 50 nm), an aluminum film (thickness of about 600 nm) and a titanium film (thickness of about 50 nm) are sequentially formed on the surface of the substrate on which the first planarizing film 19a is formed, and then these metal stacked films are patterned to form a fourth wiring layer such as the power line 20a and the routing wiring 20c.

[0093] Finally, a polyimide-based photosensitive resin film (about 2.5 μm thick) is coated on the surface of the substrate on which the above-mentioned fourth wiring layer is formed, for example by spin coating or slit coating, and then the coated film is pre-baked, exposed, developed and post-baked to form a second planarizing film 21a, a protective insulating layer 21d, etc.

[0094] As described above, the TFT layer 30 can be formed.

[0095] <Organic EL Element Layer Formation Step (Light Emitting Element Layer Formation Step)>

[0096] On the second planarizing film 21a of the TFT layer 30 formed in the above-mentioned TFT layer formation process, a first electrode 31a, an edge cover 32a, an organic EL layer 33 (hole injection layer 1, hole transport layer 2, light-emitting layer 3, electron transport layer 4, electron injection layer 5) and a second electrode 34 are formed using a known method to form an organic EL element layer 35.

[0097] <Sealing Film Forming Step>

[0098] First, on the surface of the substrate on which the organic EL element layer 35 is formed in the above-mentioned organic EL element layer forming step, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed by plasma CVD using a mask, thereby forming a first inorganic sealing film 36.

[0099] Next, an organic resin material such as acrylic resin is formed on the surface of the substrate on which the first inorganic sealing film 36 is formed, for example, by an inkjet method, to form the organic sealing film 37 .

[0100] Then, an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride is formed on the substrate surface having the organic sealing film 37 by plasma CVD using a mask to form the second inorganic sealing film 38 , thereby forming the sealing film 40 .

[0101] Furthermore, after a protective sheet (not shown) is attached to the surface of the substrate on which the sealing film 40 is formed, the glass substrate is peeled off from the lower surface of the resin substrate layer 10 by irradiating the laser from the glass substrate side of the resin substrate layer 10, and then a protective sheet 47 is attached to the lower surface of the resin substrate layer 10 from which the glass substrate is peeled off.

[0102] Furthermore, after removing the portion overlapping with the bent portion B and the terminal portion T of the protective sheet on the surface side, and the portion overlapping with the bent portion B of the protective sheet 47 on the back side, an ultraviolet-curable acrylic resin is applied to the surface side of the bent portion B with a thickness of about 100 μm by a dispenser, etc., and the acrylic resin is cured to form a reinforcing resin layer 46.

[0103] As described above, the organic EL display device 50 a of this embodiment can be manufactured.

[0104] As described above, in the organic EL display device 50a of this embodiment, the first planarizing film 19a is provided to fill the widthwise ends of the slit S formed in the laminated film of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 on both sides outside the bend B, while exposing the surface of the resin substrate layer 10 in the middle between the two ends. As a result, the first planarizing film 19a is substantially absent from the bend B located in the middle of the widthwise direction of the slit S. Therefore, even when the organic EL display device 50a is bent at the bend B, cracks in the first planarizing film 19a are unlikely to form. Furthermore, the plurality of routing wires 20c are formed from the same material and layer as the fourth wiring layer, such as the power supply line 20a, and are provided on the resin substrate layer 10 and the first planarizing film 19a on both sides outside the bend B. Therefore, by suppressing the occurrence of cracks in the first planarizing film 19a, disconnection of the routing wires 20c in the bend B can be prevented. Therefore, the generation of cracks in the first planarizing film 19 a can be suppressed, and disconnection of the routing wiring 20 c at the bent portion B can be suppressed.

[0105] Furthermore, according to the organic EL display device 50a of this embodiment, the angle θ between the side surface of the first planarizing film 19a on the bent portion B side and the surface of the resin substrate layer 10 is 20° or less, thereby suppressing short circuits between adjacent routing wires 20c.

[0106] In addition, according to the organic EL display device 50a of this embodiment, since the multiple lead wirings 20c are respectively covered by multiple protective insulating layers 21d, the etching of the aluminum layer of each lead wiring 20c caused by the etchant used when forming the first electrode 31a can be suppressed, and the wiring of each lead wiring 20c can be suppressed from becoming thinner.

[0107] In addition, according to the organic EL display device 50a of this embodiment, since the slit S formed in the stacked film of the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 is also arranged on the surface layer of the second resin substrate layer 8, the organic EL display device 50a can be easily bent at the bending portion B.

[0108] Furthermore, according to the organic EL display device 50 a of this embodiment, the plurality of protective insulating layers 21 d are provided separately from each other and are not provided integrally throughout the entire bent portion B. Therefore, the occurrence of cracks in the plurality of protective insulating layers 21 d can be suppressed.

[0109] Second Implementation Method

[0110] Figure 9 and Figure 10 A second embodiment of the display device of the present invention is shown. Figure 9This is a cross-sectional view of the frame region F of the organic EL display device 50b of this embodiment, which is equivalent to Figure 7 In addition, Figure 10 is a cross-sectional view of the bent portion B of the organic EL display device 50b, which is equivalent to Figure 8 In addition, in each of the following embodiments, Figures 1 to 8 The same parts are denoted by the same reference numerals, and detailed description thereof is omitted.

[0111] In the first embodiment, the organic EL display device 50a is illustrated in which the routing wiring 20c is covered with the protective insulating layer 21d. However, in this embodiment, the organic EL display device 50b is illustrated in which the routing wiring 20c is covered with the protective conductive layer 31c.

[0112] The organic EL display device 50 b includes a display area D and a frame area F provided around the display area D, similarly to the organic EL display device 50 a of the first embodiment.

[0113] The organic EL display device 50b is similar to the organic EL display device 50a of the first embodiment described above, and includes: a resin substrate layer 10; a TFT layer 30 provided on the resin substrate layer 10; an organic EL element layer 35 provided on the TFT layer 30; and a sealing film 40 provided on the organic EL element layer 35.

[0114] The organic EL display device 50b is similar to the organic EL display device 50a of the first embodiment described above. In the frame area F, it includes a first barrier wall Wa arranged in a frame shape on the outside of the groove G so as to surround the display area D, and a second barrier wall Wb arranged in a frame shape around the first barrier wall Wa.

[0115] The organic EL display device 50b is similar to the organic EL display device 50a of the first embodiment described above, and has a first border wiring 18h in the border area F. The first border wiring 18h is arranged in a frame shape as a third wiring layer on the inner side of the groove G, and the two ends of the opening part of the groove G extend to the terminal part T.

[0116] The organic EL display device 50b is similar to the organic EL display device 50a of the first embodiment. The second frame wiring 18i is provided in the frame area F. The second frame wiring 18i is provided in a substantially C-shape outside the groove G as a third wiring layer, and its both ends extend to the terminal portion T.

[0117] The organic EL display device 50 b has, similarly to the organic EL display device 50 a of the first embodiment, a plurality of peripheral photo spacers 32 b provided in an island shape in the frame region F so as to protrude upward from both edges of the groove G.

[0118] In the organic EL display device 50b, similarly to the organic EL display device 50a of the first embodiment, Figure 9 As shown, at the bent portion B of the frame region F, a slit S is provided in the laminated film of the base coat film 11 , the gate insulating film 13 , the first interlayer insulating film 15 , and the second interlayer insulating film 17 .

[0119] like Figure 9 and Figure 10 As shown, the organic EL display device 50b includes: a plurality of routing wires 20c provided on the first planarizing film 19a and the resin substrate layer 10 on both sides of the bend B and extending parallel to each other in a direction perpendicular to the extension direction of the bend B; a plurality of protective conductive layers 31c provided to cover the plurality of routing wires 20c; and a reinforcing resin layer 46 provided to cover the plurality of protective conductive layers 31c. Here, on the surface of the organic EL display device 50b on the side of the first resin substrate layer 6, as in the organic EL display device 50a of the first embodiment described above, Figure 9 As shown, a protective sheet 47 is provided except for the bent portion B. Furthermore, although it is difficult for the protective conductive layer 31c to completely cover the routing wiring 20c when the thickness is approximately 100 nm, by covering the routing wiring 20c with a resist pattern having a thickness of approximately 2 μm used when patterning the protective conductive layer 31c, it is possible to suppress etching of the aluminum layer of each routing wiring 20c by the etchant used when forming the first electrode 31a (and the protective conductive layer 31c).

[0120] The protective conductive layer 31 c and the first electrode 31 a are formed of the same material and in the same layer.

[0121] The organic EL display device 50b is configured to be flexible in the same manner as the organic EL display device 50a of the first embodiment. In each sub-pixel P, the light-emitting layer 3 of the organic EL layer 33 is appropriately illuminated via the first TFT 9a, the second TFT 9b, and the third TFT 9c to display an image.

[0122] The organic EL display device 50b of this embodiment can be manufactured by forming the protective conductive layer 31c when forming the first electrode 31a instead of forming the protective insulating layer 21d when forming the second planarizing film 21a in the method for manufacturing the organic EL display device 50a of the first embodiment.

[0123] As described above, in the organic EL display device 50b of this embodiment, the first planarizing film 19a is provided to fill the widthwise ends of the slit S formed in the laminated film of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 on both sides outside the bend B, while exposing the surface of the resin substrate layer 10 in the middle between the two ends. As a result, the first planarizing film 19a is substantially absent from the bend B located in the middle of the widthwise direction of the slit S. Therefore, even when the organic EL display device 50b is bent at the bend B, cracks in the first planarizing film 19a are unlikely to form. Furthermore, the plurality of routing wires 20c are formed from the same material and layer as the fourth wiring layer, such as the power supply line 20a, and are provided on the resin substrate layer 10 and the first planarizing film 19a on both sides outside the bend B. Therefore, by suppressing the occurrence of cracks in the first planarizing film 19a, disconnection of the routing wires 20c in the bend B can be prevented. Therefore, the generation of cracks in the first planarizing film 19 a can be suppressed, and disconnection of the routing wiring 20 c at the bent portion B can be suppressed.

[0124] Furthermore, according to the organic EL display device 50b of this embodiment, the angle θ between the side surface of the first planarizing film 19a on the bent portion B side and the surface of the resin substrate layer 10 is 20° or less, thereby preventing short circuits between adjacent routing wires 20c.

[0125] In addition, according to the organic EL display device 50b of this embodiment, since the multiple lead wirings 20c are respectively covered by multiple protective conductive layers 31c, the etching of the aluminum layer of each lead wiring 20c caused by the etchant used when forming the first electrode 31a is suppressed, and the wiring of each lead wiring 20c can be suppressed from becoming thinner.

[0126] In addition, according to the organic EL display device 50b of this embodiment, the slit S formed on the stacked film of the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 is also arranged on the surface layer of the second resin substrate layer 8, so the organic EL display device 50a can be easily bent at the bending portion B.

[0127] Furthermore, according to the organic EL display device 50b of this embodiment, since no layer formed of the same material as the second planarizing film 21a is provided at the bend portion B, cracks are less likely to form in the second planarizing film 21a even when the organic EL display device 50b is bent at the bend portion B. Thus, since the formation of cracks in the second planarizing film 21a is suppressed, disconnection of the routing wiring 20c at the bend portion B can be further suppressed.

[0128] Third Implementation Method

[0129] Figure 11 A third embodiment of the display device of the present invention is shown. Figure 11 This is a cross-sectional view of the frame region F of the organic EL display device 50c of this embodiment, which is equivalent to Figure 7 Picture.

[0130] In the above-mentioned first and second embodiments, organic EL display devices 50a and 50b are illustrated in which the routing wiring 20c is covered by the protective insulating layer 21d and the protective conductive layer 31c, but in this embodiment, an organic EL display device 50c is illustrated in which the routing wiring 20c is not covered by the protective insulating layer 21d and the protective conductive layer 31c.

[0131] The organic EL display device 50 c includes a display area D and a frame area F provided around the display area D, similarly to the organic EL display device 50 a of the first embodiment.

[0132] The organic EL display device 50c is similar to the organic EL display device 50a of the first embodiment described above, and includes: a resin substrate layer 10; a TFT layer 30 provided on the resin substrate layer 10; an organic EL element layer 35 provided on the TFT layer 30; and a sealing film 40 provided on the organic EL element layer 35.

[0133] The organic EL display device 50c is similar to the organic EL display device 50a of the first embodiment described above. In the frame area F, it includes a first barrier wall Wa arranged in a frame shape on the outside of the groove G so as to surround the display area D, and a second barrier wall Wb arranged in a frame shape around the first barrier wall Wa.

[0134] The organic EL display device 50c is similar to the organic EL display device 50a of the first embodiment described above, and has a first border wiring 18h in the border area F. The first border wiring 18h is arranged in a frame shape as a third wiring layer on the inner side of the groove G, and the two ends of the opening part of the groove G extend to the terminal part T.

[0135] The organic EL display device 50c is similar to the organic EL display device 50a of the first embodiment described above, and includes a second frame wiring 18i in the frame area F. The second frame wiring 18i is arranged in a roughly C-shape outside the groove G as a third wiring layer, and its both ends extend to the terminal portion T.

[0136] The organic EL display device 50 c has, similarly to the organic EL display device 50 a of the first embodiment, a plurality of peripheral photo spacers 32 b provided in an island shape in the frame region F so as to protrude upward from both edges of the groove G.

[0137] In the organic EL display device 50c, similarly to the organic EL display device 50a of the first embodiment, Figure 11 As shown, at the bent portion B of the frame region F, a slit S is provided in the laminated film of the base coat film 11 , the gate insulating film 13 , the first interlayer insulating film 15 , and the second interlayer insulating film 17 .

[0138] like Figure 11 As shown, the organic EL display device 50c includes, on the first planarizing film 19a and the resin substrate layer 10, a plurality of routing wires 20d extending parallel to each other in a direction perpendicular to the extending direction of the bent portion B, and a reinforcing resin layer 46 provided so as to cover the plurality of routing wires 20d, at the bent portion B and the outer side thereof. Here, on the surface of the organic EL display device 50c on the side of the first resin substrate layer 6, as in the organic EL display device 50a of the first embodiment described above, Figure 11 As shown, in addition to the bent portion B, a protective sheet 47 is provided.

[0139] The routing wiring 20d is provided as a fourth wiring layer and is formed in the same layer and from the same material as the power supply line 20a. The routing wiring 20d is electrically connected to display wiring such as the source line 18f on the display area D side and to the terminal C on the terminal portion T side. The routing wiring 20d has a width of, for example, approximately 10 μm. This is larger than the width of the routing wiring 20c in the first embodiment (e.g., approximately 6 μm), taking into account the thinning caused by the etching agent used to form the first electrode 31a.

[0140] The organic EL display device 50c is flexible like the organic EL display device 50a of the first embodiment. In each sub-pixel P, the light-emitting layer 3 of the organic EL layer 33 emits light appropriately via the first TFT 9a, the second TFT 9b, and the third TFT 9c, thereby displaying an image.

[0141] The organic EL display device 50c of this embodiment can be manufactured by changing the wiring width of the routing wiring 20c formed when forming the power line 20a in the manufacturing method of the organic EL display device 50a of the above-mentioned first embodiment, instead of forming the protective insulating layer 21d when forming the second planarizing film 21a.

[0142] As described above, in the organic EL display device 50c of this embodiment, the first planarizing film 19a is provided to fill the widthwise ends of the slit S formed in the laminated film of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 on both sides outside the bend B, while exposing the surface of the resin substrate layer 10 in the middle between the two ends. As a result, the first planarizing film 19a is substantially absent from the bend B located in the middle of the widthwise direction of the slit S. Therefore, even when the organic EL display device 50c is bent at the bend B, cracks in the first planarizing film 19a are unlikely to form. Furthermore, the plurality of routing wires 20d are formed from the same material and layer as the fourth wiring layer, such as the power supply line 20a, and are provided on the resin substrate layer 10 and the first planarizing film 19a on both sides outside the bend B. This prevents cracks in the first planarizing film 19a, thereby preventing breakage of the routing wires 20d in the bend B. Therefore, the generation of cracks in the first planarizing film 19 a can be suppressed, and disconnection of the routing wiring 20 d at the bent portion B can be suppressed.

[0143] Furthermore, according to the organic EL display device 50c of this embodiment, the angle θ between the side surface of the first planarizing film 19a on the bent portion B side and the surface of the resin substrate layer 10 is 20° or less, thereby suppressing short circuits between adjacent routing wires 20d.

[0144] In addition, according to the organic EL display device 50c of this embodiment, since the slit S formed in the stacked film of the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 is also arranged on the surface layer of the second resin substrate layer 8, the organic EL display device 50c can be easily bent at the bending portion B.

[0145] Furthermore, according to the organic EL display device 50c of this embodiment, since no layer formed of the same material as the second planarizing film 21a is provided at the bend portion B, the second planarizing film 21a is less likely to crack even when the organic EL display device 50c is bent at the bend portion B. Thus, since the generation of cracks in the second planarizing film 21a is suppressed, disconnection of the routing wiring 20d at the bend portion B can be further suppressed.

[0146] Fourth Implementation Method

[0147] Figure 12 and Figure 13 A fourth embodiment of the display device of the present invention is shown. Figure 12 This is a cross-sectional view of the display region D of the organic EL display device 50d of this embodiment, which is equivalent to Figure 3 In addition, Figure 13This is a cross-sectional view of the frame region F of the organic EL display device 50d, which is equivalent to Figure 7 In addition, Figure 14 This is a cross-sectional view of a frame region of an organic EL display device 50e, which is illustrated as a modified example of the organic EL display device 50d. Figure 7 Picture.

[0148] In the first, second, and third embodiments described above, the organic EL display devices 50 a , 50 b , and 50 c without a touch panel layer are exemplified. However, in this embodiment, an organic EL display device 50 d including a touch panel layer 45 is exemplified.

[0149] The organic EL display device 50 d includes a display area D and a frame area F provided around the display area D, similarly to the organic EL display device 50 a of the first embodiment.

[0150] like Figure 12 As shown, the organic EL display device 50d includes: a resin substrate layer 10; a TFT layer 30 arranged on the resin substrate layer 10; an organic EL element layer 35 arranged on the TFT layer 30 as a light-emitting element layer; a sealing film 40 arranged in a manner covering the organic EL element layer 35; and a touch panel layer 45 arranged on the sealing film 40.

[0151] like Figure 12 As shown, the touch panel layer 45 includes a first touch wiring layer 41 a , a third interlayer insulating film 42 , a second touch wiring layer 43 a , and an overcoat film 44 a , which are provided on the sealing film 40 and sequentially stacked on the second inorganic sealing film 38 of the sealing film 40 .

[0152] The first touch wiring layer 41a is in the display area D, for example, Figure 12 As shown in Figure 1 A plurality of them are provided on the second inorganic sealing film 38 so as to extend parallel to each other in the X direction.

[0153] like Figure 12 As shown, the third interlayer insulating film 42 is provided to cover each first touch wiring layer 41a. Here, the third interlayer insulating film 42 is composed of a single layer or a stacked layer of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.

[0154] The second touch wiring layer 43a is in the display area D, for example, Figure 12 As shown in Figure 1 A plurality of them are provided on the third interlayer insulating film 42 so as to extend parallel to each other in the Y direction.

[0155] like Figure 12As shown, the overcoat film 44 a is provided on the third interlayer insulating film 42 in a manner covering each second touch wiring layer 43 a .

[0156] The organic EL display device 50d is similar to the organic EL display device 50a of the first embodiment described above. In the frame area F, it includes a first barrier wall Wa arranged in a frame shape on the outside of the groove G so as to surround the display area D, and a second barrier wall Wb arranged in a frame shape around the first barrier wall Wa.

[0157] The organic EL display device 50d is similar to the organic EL display device 50a of the first embodiment described above, and has a first border wiring 18h in the border area F. The first border wiring 18h is arranged in a frame shape as a third wiring layer on the inner side of the groove G, and the two ends of the opening part of the groove G extend to the terminal part T.

[0158] The organic EL display device 50d is similar to the organic EL display device 50a of the first embodiment described above, and includes a second frame wiring 18i in the frame area F. The second frame wiring 18i is arranged in a roughly C-shape as a third wiring layer outside the groove G, with both ends extending to the terminal portion T.

[0159] The organic EL display device 50 d includes, similarly to the organic EL display device 50 a of the first embodiment, a plurality of peripheral photo spacers 32 b provided in an island shape in the frame region F so as to protrude upward from both edges of the groove G.

[0160] In the organic EL display device 50d, similarly to the organic EL display device 50a of the first embodiment, Figure 13 As shown, at the bent portion B of the frame region F, a slit S is provided in the laminated film of the base coat film 11 , the gate insulating film 13 , the first interlayer insulating film 15 , and the second interlayer insulating film 17 .

[0161] like Figure 13 As shown, the organic EL display device 50d has a plurality of routing wirings 41b extending parallel to each other in a direction orthogonal to the extension direction of the bending portion B and a reinforcing resin layer 46 arranged in a manner covering the plurality of routing wirings 41b on the first planarizing film 19a and the resin substrate layer 10 on the bending portion B and the two side portions outside the bending portion.

[0162] Here, on the surface of the organic EL display device 50d on the side of the first resin substrate layer 6, similarly to the organic EL display device 50a of the first embodiment, Figure 13 As shown, in addition to the bent portion B, a protective sheet 47 is provided.

[0163] The routing wiring 41b is formed of the same material and on the same layer as the first touch wiring layer 41a. Here, the routing wiring 41b is electrically connected to display wiring such as the source line 18f on the display area D side, and is electrically connected to the terminal C on the terminal portion T side. While this embodiment illustrates the routing wiring 41b formed of the same material and on the same layer as the first touch wiring layer 41a, the routing wiring 41b may also be formed of the same material and on the same layer as the second touch wiring layer 43a.

[0164] In addition, while this embodiment illustrates an organic EL display device 50d in which a reinforcing resin layer 46 is provided on the bend portion B and on both sides thereof to cover the routing wires 41b, an organic EL display device 50e may also be provided in which an overcoat layer 44b is provided on both sides thereof to cover the routing wires 41b. Here, the overcoat layer 44b is formed from the same material and in the same layer as the overcoat film 44a provided in the display area D. This organic EL display device 50e eliminates the need for a reinforcing resin layer 46 on the bend portion B, as is required in organic EL display device 50d. This reduces the manufacturing cost of the organic EL display device 50e. Furthermore, while the first and second planarizing films 19a and 21a formed in the TFT layer formation process are highly precise and require high-temperature resistance, the overcoat films 44a and 44b formed after the TFT layer formation process do not require high precision or high-temperature resistance, and are therefore less susceptible to cracking.

[0165] Similar to the organic EL display device 50a of the first embodiment, the organic EL display device 50d is flexible and displays images in each subpixel P by appropriately emitting light from the light-emitting layer 3 of the organic EL layer 33 via the first TFT 9a, the second TFT 9b, and the third TFT 9c. Furthermore, the organic EL display device 50d is configured to calculate and detect the touched position of the position detection circuit based on changes in capacitance generated at the intersection of the first touch wiring layer 41a and the second touch wiring layer 43a by touching the surface of the overcoat layer 44a of the display area D.

[0166] The organic EL display device 50d of this embodiment can be manufactured by performing the following touch panel layer forming process between the process of forming the sealing film 40 and the process of attaching a protective sheet on the surface side of the substrate surface on which the sealing film 40 is formed, in the sealing film forming process in the manufacturing method of the organic EL display device 50a of the above-mentioned first embodiment.

[0167] <Touch Panel Layer Formation Process>

[0168] First, in the sealing film forming process, a sealing film 40 is formed on the surface of the substrate. For example, a titanium film (thickness of about 50 nm), an aluminum film (thickness of about 300 nm) and a titanium film (thickness of about 50 nm) are formed in sequence by sputtering. Then, these metal stacked films are patterned to form a first touch wiring layer 41a, etc.

[0169] Next, a silicon nitride film (about 400 nm) is formed on the substrate surface on which the first touch wiring layer 41 a and the like are formed, for example, by a plasma CVD method, thereby forming the third interlayer insulating film 42 .

[0170] Furthermore, on the surface of the substrate on which the third interlayer insulating film 42 is formed, a titanium film (thickness of about 50 nm), an aluminum film (thickness of about 300 nm) and a titanium film (thickness of about 50 nm) are formed in sequence, for example by sputtering, and then these metal stacked films are patterned to form a second touch wiring layer 43a, etc.

[0171] Afterwards, a photosensitive transparent acrylic resin (thickness of about 2.0 μm) is coated on the surface of the substrate where the second touch wiring layer 43a is formed, for example by spin coating or slit coating, and the coating film is pre-baked, exposed, developed and post-baked to form an outer coating film 44a, thereby forming a touch panel layer 45.

[0172] As described above, in the organic EL display device 50d of this embodiment, the first planarizing film 19a is provided to fill the widthwise ends of the slit S formed in the laminated film comprising the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17, on both sides outside the bend B, while exposing the surface of the resin substrate layer 10 in the middle portion between the two ends. As a result, the first planarizing film 19a is substantially absent from the bend B located in the middle portion of the widthwise direction of the slit S. Therefore, even when the organic EL display device 50d is bent at the bend B, cracks in the first planarizing film 19a are unlikely to form. Furthermore, the plurality of routing wires 41b are formed from the same material and layer as the first touch wiring layer 41a, and are provided on the resin substrate layer 10 and the first planarizing film 19a at the bend B and on both sides thereof. Therefore, by suppressing the occurrence of cracks in the first planarizing film 19a, disconnection of the routing wires 41b in the bend B can be prevented. Therefore, the occurrence of cracks in the first planarizing film 19 a can be suppressed, and disconnection of the routing wiring 41 b at the bent portion B can be suppressed.

[0173] Furthermore, according to the organic EL display device 50 d of this embodiment, the angle θ between the side surface of the first planarizing film 19 a on the bent portion B side and the surface of the resin substrate layer 10 is 20° or less, thereby suppressing short circuits between adjacent routing wires 41 b .

[0174] In addition, according to the organic EL display device 50d of this embodiment, the slit S formed on the stacked film of the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 is also arranged on the surface layer of the second resin substrate layer 8, so the organic EL display device 50d can be easily bent at the bending portion B.

[0175] Furthermore, according to the organic EL display device 50d of this embodiment, since no layer formed of the same material as the second planarizing film 21a is provided at the bent portion B, the second planarizing film 21a is less likely to crack even when the organic EL display device 50d is bent at the bent portion B. Thus, since the generation of cracks in the second planarizing film 21a is suppressed, disconnection of the routing wiring 41b at the bent portion B can be further suppressed.

[0176] In addition, according to the organic EL display device 50d of this embodiment, the multiple routing wirings 41b and the first touch wiring layer 41a are formed of the same material on the same layer, so the routing wirings 41b will not be etched by the etchant used when forming the first electrode 31a, and there is no need to consider the thinning of the routing wirings 41b caused by the etchant used when forming the first electrode 31a.

[0177] Fifth Implementation Method

[0178] Figure 15 and Figure 16 A fifth embodiment of the display device of the present invention is shown. Figure 15 This is a cross-sectional view of the display area D of the organic EL display device 50f of this embodiment, which is equivalent to Figure 3 In addition, Figure 16 is a cross-sectional view of the frame region F of the organic EL display device 50f, which is equivalent to Figure 7 Picture.

[0179] In the above-mentioned first, second, third and fourth embodiments, organic EL display devices 50a, 50b, 50c and 50d (50e) are exemplified, each of which includes a TFT layer 30 having a power line 20a as a fourth wiring layer, but in this embodiment, an organic EL display device 50f is exemplified, which includes a TFT layer 30f in which the fourth wiring layer is omitted.

[0180] The organic EL display device 50 f includes a display area D and a frame area F provided around the display area D, similarly to the organic EL display device 50 a of the first embodiment.

[0181] like Figure 15As shown, the organic EL display device 50 f includes: a resin substrate layer 10 ; a TFT layer 30 f provided on the resin substrate layer 10 ; an organic EL element layer 35 provided on the TFT layer 30 f ; and a sealing film 40 provided to cover the organic EL element layer 35 .

[0182] like Figure 15 As shown, the TFT layer 30f includes: a base coat film 11 provided on the resin substrate layer 10, a plurality of first TFTs 9a provided on the base coat film 11, and a plurality of second TFTs 9b (see FIG. Figure 4 ), a plurality of third TFTs 9c and a plurality of capacitors 9d, and a second planarizing film 21a provided on each first TFT 9a, each second TFT 9b and each third TFT 9c.

[0183] In the TFT layer 30f, as Figure 15 As shown, on the resin substrate layer 10, there are sequentially stacked semiconductor pattern layers such as a base coating film 11, a semiconductor layer 12a, a gate insulating film 13, a gate 14a and other first wiring layers, a first interlayer insulating film 15, an upper conductive layer 16c and other second wiring layers, a second interlayer insulating film 17, a source 18a and other third wiring layers, and a second planarizing film 21a.

[0184] In the TFT layer 30f, similar to the TFT layer 30 of the organic EL display device 50a in the first embodiment, multiple gate lines 14g are provided as a first wiring layer. Furthermore, similar to the TFT layer 30 of the organic EL display device 50a in the first embodiment, multiple emission control lines 14e are provided as a first wiring layer, extending parallel to one another. Furthermore, similar to the TFT layer 30 of the organic EL display device 50a in the first embodiment, multiple source lines 18f are provided as a third wiring layer, extending parallel to one another. Furthermore, in the TFT layer 30f, multiple power supply lines (not shown) are provided as a third wiring layer, extending parallel to one another. Each power supply line is provided adjacent to each source line 18f. Furthermore, similar to the TFT layer 30 of the organic EL display device 50a of the first embodiment, the TFT layer 30f includes a first TFT 9a, a second TFT 9b, a third TFT 9c, and a capacitor 9d in each subpixel P. The upper conductive layer 16c of the capacitor 9d is electrically connected to a power supply line via a contact hole formed in the second interlayer insulating film 17.

[0185] The organic EL display device 50f is similar to the organic EL display device 50a of the first embodiment described above. In the frame area F, it includes a first barrier wall Wa arranged in a frame shape on the outside of the groove G so as to surround the display area D, and a second barrier wall Wb arranged in a frame shape around the first barrier wall Wa.

[0186] The organic EL display device 50f is similar to the organic EL display device 50a of the first embodiment mentioned above, and has a first border wiring 18h in the border area F. The first border wiring 18h is arranged in a frame shape on the inner side of the groove G as a third wiring layer, and the two ends of the opening part of the groove G extend to the terminal part T.

[0187] The organic EL display device 50f is similar to the organic EL display device 50a of the first embodiment described above, and includes a second frame wiring 18i in the frame area F. The second frame wiring 18i is arranged in a roughly C-shape outside the groove G as a third wiring layer, and its both ends extend to the terminal portion T.

[0188] The organic EL display device 50 f includes, similarly to the organic EL display device 50 a of the first embodiment, a plurality of peripheral photo spacers 32 b provided in an island shape in the frame region F so as to protrude upward from both edges of the groove G.

[0189] In the organic EL display device 50f, similarly to the organic EL display device 50a of the first embodiment, Figure 16 As shown, at the bent portion B of the frame region F, a slit S is provided in the laminated film of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Figure 16 As shown, the first planarizing film 19f is provided as another planarizing film on both sides of the outer side of the bent portion B so as to fill the two ends of the slit S in the width direction and expose the surface of the resin substrate layer 10 in the middle portion between the two ends. The first planarizing film 19f is made of an organic resin material such as polyimide resin, acrylic resin, or a polysiloxane-based SOG (spin on glass) material. Figure 16 As shown, the first planarizing film 19f is provided so as to fill the both ends of the width direction of the slit S and thereby fill the eaves-shaped portion of both edges of the laminated film of the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 on the second resin substrate layer 8 side where the slit S is formed. Figure 16 As shown, the side surface of the first planarizing film 19f on the side of the bent portion B is inclined in a forward tapered shape so as to protrude toward the resin substrate layer 10. In addition, the angle θ between the side surface of the first planarizing film 19f on the side of the bent portion B and the surface of the resin substrate layer 10 (see Figure 16) is 20° or less. In addition, when the angle θ between the side surface of the bent portion B of the first planarizing film 19f and the surface of the resin substrate layer 10 is greater than 20°, when forming the routing wiring 18j described later, the metal film constituting the routing wiring 18j is likely to remain between adjacent routing wirings 18j, and therefore, adjacent routing wirings 18j may be short-circuited.

[0190] like Figure 16 As shown, the organic EL display device 50f includes, on both sides of the bend portion B and its outer sides: a plurality of routing wires 18j arranged on the first planarizing film 19f and the resin substrate layer 10 so as to extend parallel to each other in a direction perpendicular to the extension direction of the bend portion B; a plurality of protective insulating layers 21d arranged so as to respectively cover the plurality of routing wires 18j; and a reinforcing resin layer 46 arranged so as to cover the plurality of protective insulating layers 21d. Here, on the surface of the organic EL display device 50f on the side of the first resin substrate layer 6, as in the organic EL display device 50a of the first embodiment described above, Figure 16 As shown, in addition to the bent portion B, a protective sheet 47 is provided.

[0191] The routing wiring 18j is provided as a third wiring layer and is formed of the same material and in the same layer as the source line 18f. Here, the routing wiring 18j is electrically connected to the display wiring such as the source line 18f on the display area D side and is electrically connected to the terminal C on the terminal portion T side.

[0192] The organic EL display device 50f is configured to be flexible in the same manner as the organic EL display device 50a of the first embodiment. In each sub-pixel P, the light-emitting layer 3 of the organic EL layer 33 is appropriately illuminated via the first TFT 9a, the second TFT 9b, and the third TFT 9c to display an image.

[0193] The organic EL display device 50f of this embodiment can be manufactured by forming a first planarizing film 19f only on both sides of the outer side of the bending portion B after forming the slit S in the TFT layer forming process of the manufacturing method of the organic EL display device 50a of the above-mentioned first embodiment, and sequentially forming a third wiring layer such as the source line 18f and a second planarizing film 21a to form a TFT layer 30f.

[0194] As described above, in the organic EL display device 50f of this embodiment, the first planarizing film 19f fills the widthwise ends of the slit S formed in the laminated film comprising the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 on both sides outside the bend B, while exposing the surface of the resin substrate layer 10 in the middle portion between the two ends. As a result, the first planarizing film 19f is substantially absent from the bend B located in the middle portion of the widthwise direction of the slit S. Therefore, even when the organic EL display device 50f is bent at the bend B, cracks in the first planarizing film 19f are unlikely to form. Furthermore, the plurality of routing wirings 18j are formed from the same material and layer as the third wiring layer, such as the source lines 18f, and are provided on the resin substrate layer 10 and the first planarizing film 19f on both sides outside the bend B. Therefore, by suppressing the occurrence of cracks in the first planarizing film 19f, disconnection of the routing wirings 18j in the bend B can be prevented. Therefore, the generation of cracks in the first planarizing film 19 f can be suppressed, and disconnection of the routing wiring 18 j at the bent portion B can be suppressed.

[0195] Furthermore, according to the organic EL display device 50f of this embodiment, the angle θ between the side surface of the first planarizing film 19f on the bent portion B side and the surface of the resin substrate layer 10 is 20° or less, thereby suppressing short circuits between adjacent routing wires 18j.

[0196] In addition, according to the organic EL display device 50f of this embodiment, since the multiple lead wirings 18j are respectively covered by multiple protective insulating layers 21d, the etching of the aluminum layer of each lead wiring 18j caused by the etchant used when forming the first electrode 31a can be suppressed, and the wiring of each lead wiring 18j can be suppressed from becoming thinner.

[0197] In addition, according to the organic EL display device 50f of this embodiment, the slit S formed on the stacked film of the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 is also arranged on the surface layer of the second resin substrate layer 8, so the organic EL display device 50f can be easily bent at the bending portion B.

[0198] Furthermore, according to the organic EL display device 50 f of this embodiment, the plurality of protective insulating layers 21 d are provided separately from each other and are not provided integrally throughout the entire bent portion B. Therefore, the occurrence of cracks in the plurality of protective insulating layers 21 d can be suppressed.

[0199] Sixth Implementation Method

[0200] Figures 17 to 19 A fifth embodiment of the display device of the present invention is shown. Figure 17 This is a cross-sectional view of the display region D of the organic EL display device 50g of this embodiment, which is equivalent to Figure 3 In addition, Figure 18 is a cross-sectional view of the frame region F of the organic EL display device 50g, which is equivalent to Figure 7 In addition, Figure 19 This is a cross-sectional view showing a portion of the manufacturing process of the organic EL display device 50g, which is equivalent to Figure 7 Picture.

[0201] In the fifth embodiment, the organic EL display device 50 f including the TFT layer 30 f without the fourth wiring layer is exemplified. However, in this embodiment, an organic EL display device 50 g including the TFT layer 30 f and the touch panel layer 45 is exemplified.

[0202] The organic EL display device 50 g includes a display area D and a frame area F provided around the display area D, similarly to the organic EL display device 50 a of the first embodiment.

[0203] like Figure 17 As shown, the organic EL display device 50g includes: a resin substrate layer 10; a TFT layer 30f arranged on the resin substrate layer 10; an organic EL element layer 35 arranged on the TFT layer 30f; a sealing film 40 arranged in a manner covering the organic EL element layer 35; and a touch panel layer 45 arranged on the sealing film 40.

[0204] The organic EL display device 50g is similar to the organic EL display device 50a of the first embodiment described above. In the frame area F, it includes a first barrier wall Wa arranged in a frame shape on the outside of the groove G so as to surround the display area D, and a second barrier wall Wb arranged in a frame shape around the first barrier wall Wa.

[0205] The organic EL display device 50g is similar to the organic EL display device 50a of the first embodiment mentioned above, and has a first border wiring 18h in the border area F. The first border wiring 18h is arranged in a frame shape on the inner side of the groove G as a third wiring layer, and the two ends of the opening part of the groove G extend to the terminal part T.

[0206] The organic EL display device 50g is similar to the organic EL display device 50a of the first embodiment described above, and includes a second frame wiring 18i in the frame area F. The second frame wiring 18i is provided as a third wiring layer in a substantially C-shape outside the groove G, and both ends extend to the terminal portion T.

[0207] The organic EL display device 50g includes a plurality of peripheral photo spacers 32b provided in the frame region F in an island shape so as to protrude upward from both edges of the groove G, similarly to the organic EL display device 50a of the first embodiment.

[0208] In the organic EL display device 50g, similarly to the organic EL display device 50a of the first embodiment, Figure 18 As shown, at the bent portion B of the frame region F, a slit S is provided in the laminated film of the base coat film 11 , the gate insulating film 13 , the first interlayer insulating film 15 , and the second interlayer insulating film 17 .

[0209] like Figure 18 As shown, the organic EL display device 50g includes: a plurality of routing wires 18j arranged on the first planarizing film 19f and the resin substrate layer 10 on the bend portion B and on both sides thereof, extending parallel to each other in a direction perpendicular to the extension direction of the bend portion B; a laminated film of a protective insulating layer 21e and an outer coating layer 44c arranged in sequence on both sides of the outer side of the bend portion B so as to cover the plurality of routing wires 18j; and a reinforcing resin layer 46 provided on the bend portion B so as to cover the plurality of routing wires 18j. Here, on the surface of the first resin substrate layer 6 side of the organic EL display device 50g, as in the organic EL display device 50a of the first embodiment described above, Figure 18 As shown, a protective sheet 47 is provided except for the bent portion B. The protective insulating layer 21e and the second planarizing film 21a are formed of the same material and in the same layer. The overcoat layer 44c and the overcoat film 44a are formed of the same material and in the same layer.

[0210] Similar to the organic EL display device 50a of the first embodiment, the organic EL display device 50g is flexible and displays images by appropriately emitting light from the light-emitting layer 3 of the organic EL layer 33 via the first TFT 9a, the second TFT 9b, and the third TFT 9c in each subpixel P. Furthermore, the organic EL display device 50g is configured to calculate and detect the touched position of the position detection circuit based on changes in capacitance generated at the intersection of the first touch wiring layer 41a and the second touch wiring layer 43a by touching the surface of the overcoat layer 44a of the display area D.

[0211] The organic EL display device 50g of this embodiment is manufactured as follows: after forming the TFT layer 30f as in the manufacturing method of the organic EL display device 50f of the fifth embodiment, similarly to the manufacturing method of the organic EL display device 50d of the fourth embodiment, in the sealing film forming step of the manufacturing method of the organic EL display device 50a of the first embodiment, a touch panel layer forming step is performed between the step of forming the sealing film 40 and the step of attaching the protective sheet on the surface side of the substrate on which the sealing film 40 is formed. In this case, in the organic EL element layer forming step, when forming the first electrode 31a, each routing wiring 18j is protected by the resin film 21 (see FIG. 2 ) which becomes the protective insulating layer 21e. Figure 19) is covered, thereby suppressing etching of the aluminum layer of each routing wiring 18j caused by the etchant used when forming the first electrode 31a. In addition, in the touch panel layer forming process, a non-photosensitive transparent acrylic resin film 44 with a thickness of about 2.0 μm is formed on the surface of the substrate on which the second touch wiring layer 43a and the like are formed, for example, by spin coating or slit coating. Figure 19 As shown, after forming a resist pattern R on the acrylic resin film 44, the acrylic resin film 44 and the resin film 21 exposed from the resist pattern R are removed by dry etching using SF6 gas, CF4 gas, O2 gas, etc., to form a protective insulating layer 21e and an overcoat layer 44c.

[0212] As described above, in the organic EL display device 50g of this embodiment, the first planarizing film 19f is provided so as to fill the widthwise ends of the slit S formed in the laminated film comprising the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 on both sides outside the bend B, while exposing the surface of the resin substrate layer 10 in the middle portion between the two ends. As a result, the first planarizing film 19f is substantially absent from the bend B located in the middle portion of the widthwise direction of the slit S. Therefore, even when the organic EL display device 50g is bent at the bend B, cracks in the first planarizing film 19f are unlikely to form. Furthermore, the plurality of routing wirings 18j are formed from the same material and layer as the third wiring layer, such as the source lines 18f, and are provided on the resin substrate layer 10 and the first planarizing film 19f on both sides outside the bend B. Therefore, by suppressing the occurrence of cracks in the first planarizing film 19f, disconnection of the routing wirings 18j in the bend B can be prevented. Therefore, the generation of cracks in the first planarizing film 19 f can be suppressed, and disconnection of the routing wiring 18 j at the bent portion B can be suppressed.

[0213] Furthermore, according to the organic EL display device 50g of this embodiment, the angle θ between the side surface of the first planarizing film 19f on the bent portion B side and the surface of the resin substrate layer 10 is 20° or less, thereby suppressing short circuits between adjacent routing wires 18j.

[0214] In addition, according to the organic EL display device 50g of this embodiment, since the multiple lead wirings 18j are covered by the resin film 21 when the first electrode 31a is formed, the etching of the aluminum layer of each lead wiring 18j caused by the etchant used when forming the first electrode 31a can be suppressed, and the wiring of each lead wiring 18j can be suppressed from becoming thinner.

[0215] In addition, according to the organic EL display device 50g of this embodiment, the slit S formed on the stacked film of the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 is also arranged on the surface layer of the second resin substrate layer 8, so the organic EL display device 50g can be easily bent at the bending portion B.

[0216] Furthermore, according to the organic EL display device 50g of this embodiment, since no layer formed of the same material as the second planarizing film 21a is provided in the bent portion B, the second planarizing film 21a is less likely to crack even when the organic EL display device 50g is bent at the bent portion B. Thus, since the generation of cracks in the second planarizing film 21a is suppressed, disconnection of the routing wiring 18j in the bent portion B can be further suppressed.

[0217] Other Implementation Methods

[0218] In the above embodiments, an organic EL layer having a five-layer stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer is exemplified. However, the organic EL layer may also have a three-layer stacked structure of, for example, a hole injection layer serving as a hole transport layer, a light-emitting layer, and an electron transport layer serving as an electron injection layer.

[0219] In addition, in the above-mentioned embodiments, an organic EL display device in which the first electrode serves as an anode and the second electrode serves as a cathode is exemplified, but the present invention can also be applied to an organic EL display device in which the stacked structure of the organic EL layer is reversed, the first electrode serves as a cathode, and the second electrode serves as an anode.

[0220] Furthermore, in the above embodiments, an organic EL display device in which the electrode of the TFT connected to the first electrode is used as a drain electrode is exemplified. However, the present invention is also applicable to an organic EL display device in which the electrode of the TFT connected to the first electrode is used as a source electrode.

[0221] Furthermore, in the above embodiments, an organic EL display device is used as an example for the display device. However, the present invention can also be applied to a display device having multiple light-emitting elements driven by current. For example, it can be applied to a display device having a light-emitting element that uses a quantum dot-containing layer, namely a QLED (Quantum-dot light emitting diode).

[0222] Industrial Application Possibilities

[0223] As described above, the present invention is useful for a flexible display device.

[0224] Description of Reference Numerals

[0225] B: Bending part

[0226] C: Terminal

[0227] D: Display area

[0228] F: Border area

[0229] P: Sub-pixel

[0230] S:Slit

[0231] T: Terminal

[0232] 6: First resin substrate layer

[0233] 7: Inorganic insulating film inside the substrate

[0234] 8: Second resin substrate layer

[0235] 10: Resin substrate layer

[0236] 11: Base coating film (inorganic insulating film)

[0237] 13: Gate insulating film (inorganic insulating film)

[0238] 15: First interlayer insulating film (inorganic insulating film)

[0239] 17: Second interlayer insulating film (inorganic insulating film)

[0240] 18f: Source line (display wiring, wiring layer)

[0241] 18j: Route wiring

[0242] 19a: First planarization film

[0243] 19f: First planarization film (other planarization films)

[0244] 20a: Power line (wiring layer)

[0245] 20b: Relay electrode (wiring layer)

[0246] 20c, 20d: Route wiring

[0247] 21a: Second planarization film

[0248] 21d, 21e: Protective insulation layer

[0249] 30: TFT layer (thin film transistor layer)

[0250] 31a: First electrode

[0251] 31c: Protective conductive layer

[0252] 33: Organic EL layer (organic electroluminescent layer, light-emitting functional layer)

[0253] 34: Second electrode

[0254] 35: Organic EL element layer (light-emitting element layer)

[0255] 36: First inorganic sealing film

[0256] 37: Organic sealing film

[0257] 38: Second inorganic sealing film

[0258] 40: Sealing film

[0259] 41a: first touch wiring layer

[0260] 41b: Cabling

[0261] 42: Third interlayer insulating film

[0262] 43a: Second touch wiring layer

[0263] 44a: External coating

[0264] 44b, 44c: outer coating

[0265] 45: Touch panel layer

[0266] 46: Reinforced resin layer

[0267] 50a, 50b, 50c, 50d, 50e, 50f, 50g: Organic EL display devices

Claims

1. A display device, characterized in that: It has: Resin substrate layer; a thin film transistor layer provided on the resin substrate layer, wherein an inorganic insulating film, a first planarizing film, a wiring layer, and a second planarizing film are sequentially stacked; as well as a light-emitting element layer, which is provided on the thin film transistor layer, corresponds to a plurality of sub-pixels constituting the display area, and is sequentially stacked with a plurality of first electrodes, a plurality of light-emitting functional layers, and a common second electrode; A frame area is provided around the display area. A terminal portion is provided at the end of the frame area. A bent portion is provided between the display area and the terminal portion in a manner extending in one direction. A plurality of display wirings are provided in the display area so as to extend parallel to each other. On the terminal portion, a plurality of terminals are provided along the extending direction of the bent portion. The inorganic insulating film is provided with a slit at the bent portion so as to extend in the direction in which the bent portion extends and expose the surface of the resin substrate layer. The first planarizing film is provided on both sides of the outer side of the bent portion so as to fill both ends of the slit in the width direction and expose the surface of the resin substrate layer in the middle portion between the two ends. On the first planarizing film and the resin substrate layer, a plurality of routing wirings are provided on both sides of the bending portion and the outer side of the bending portion, and the plurality of routing wirings extend parallel to each other in a direction intersecting the extension direction of the bending portion, are electrically connected to the plurality of display wirings on the display area side, are electrically connected to the plurality of terminals on the terminal portion side, and are formed on the same layer with the wiring layer using the same material.

2. The display device according to claim 1, wherein The side surface of the first planarizing film on the bent portion side is inclined in a forward tapered shape.

3. The display device according to claim 2, wherein: An angle formed between the side surface of the first planarizing film on the bent portion side and the surface of the resin substrate layer is 20° or less.

4. The display device according to any one of claims 1 to 3, characterized in that The plurality of routing wires are respectively covered by a plurality of protective insulating layers formed of the same material and on the same layer as the second planarizing film.

5. The display device according to claim 4, wherein: The plurality of protective insulating layers are covered with a reinforcing resin layer on both sides of the bent portion and outside the bent portion.

6. The display device according to any one of claims 1 to 3, wherein: The plurality of routing wires are respectively covered by a plurality of protective conductive layers formed of the same material and on the same layer as the plurality of first electrodes.

7. The display device according to claim 6, wherein: The plurality of protective conductive layers are covered with a reinforcing resin layer at both sides of the bent portion and outside the bent portion.

8. The display device according to any one of claims 1 to 3, characterized in that The plurality of routing wires are covered with a reinforcing resin layer on both sides of the bent portion and outside the bent portion.

9. The display device according to any one of claims 1 to 8, wherein: The resin substrate layer includes: a first resin substrate layer disposed on a side opposite to the thin film transistor layer; a second resin substrate layer provided on the thin film transistor layer side; and The intra-substrate inorganic insulating film is provided between the first resin substrate layer and the second resin substrate layer.

10. The display device according to claim 9, wherein The slits are also provided on the surface layer of the second resin substrate layer.

11. The display device according to claim 10, wherein: Both edge portions of the inorganic insulating film in which the slits are formed are provided in an eaves shape so as to protrude inwardly from the side walls of the surface layer of the second resin substrate layer.

12. The display device according to claim 11, wherein The first planarizing film is provided so as to fill the second resin substrate layer side of the eaves-shaped portions of both edge portions of the inorganic insulating film.

13. A display device, characterized in that: It has: Resin substrate layer; a thin film transistor layer provided on the resin substrate layer, wherein an inorganic insulating film, a wiring layer, and a planarization film are sequentially stacked; a light-emitting element layer, which is provided on the thin film transistor layer, corresponds to a plurality of sub-pixels constituting the display area, and is sequentially stacked with a plurality of first electrodes, a plurality of light-emitting functional layers, and a common second electrode; a sealing film provided so as to cover the light-emitting element layer and including a first inorganic sealing film, an organic sealing film, and a second inorganic sealing film stacked in this order; and A touch panel layer is provided on the sealing film, and is sequentially stacked with a first touch wiring layer, an interlayer insulating film, and a second touch wiring layer, and a frame area is provided around the display area. A terminal portion is provided at the end of the frame area. A bent portion is provided between the display area and the terminal portion in a manner extending in one direction. A plurality of display wirings are provided in the display area so as to extend parallel to each other. On the terminal portion, a plurality of terminals are provided along the extending direction of the bent portion. The inorganic insulating film is provided with a slit at the bent portion so as to extend in the direction in which the bent portion extends and expose the surface of the resin substrate layer. The planarizing film is provided on both sides of the outer side of the bent portion so as to fill both ends of the slit in the width direction and expose the surface of the resin substrate layer in the middle portion between the two ends. On the planarizing film and the resin substrate layer, a plurality of routing wirings are provided on both sides of the bending portion and the outer side of the bending portion, and the plurality of routing wirings extend parallel to each other in a direction intersecting with the extension direction of the bending portion, are electrically connected to the plurality of display wirings on the display area side, are electrically connected to the plurality of terminals on the terminal portion side, and are formed on the same layer with the same material as the first touch wiring layer or the second touch wiring layer.

14. The display device according to claim 13, wherein: The side surface of the planarizing film on the bent portion side is inclined in a forward tapered shape.

15. The display device according to claim 14, wherein: An angle formed between the side surface of the planarizing film on the bent portion side and the surface of the resin substrate layer is 20° or less.

16. The display device according to any one of claims 13 to 15, characterized in that The plurality of routing wires are covered with a reinforcing resin layer on both sides of the bent portion and outside the bent portion.

17. The display device according to any one of claims 13 to 15, characterized in that The touch panel layer includes an overcoat film stacked on the second touch wiring layer. The plurality of routing wires are covered at both sides of the bent portion and outside the bent portion by an overcoat layer formed of the same material and the same layer as the overcoat film.

18. The display device according to any one of claims 13 to 17, wherein: The resin substrate layer includes: a first resin substrate layer disposed on a side opposite to the thin film transistor layer; a second resin substrate layer provided on the thin film transistor layer side; and The intra-substrate inorganic insulating film is provided between the first resin substrate layer and the second resin substrate layer.

19. The display device according to claim 18, wherein The slits are also provided on the surface layer of the second resin substrate layer.

20. The display device according to claim 19, wherein Both edge portions of the inorganic insulating film in which the slits are formed are provided in an eaves shape so as to protrude inwardly from the side walls of the surface layer of the second resin substrate layer.

21. The display device according to claim 20, wherein: The planarizing film is provided so as to fill the second resin substrate layer side of the eaves-shaped portions of both edge portions of the inorganic insulating film.

22. A display device, characterized in that: It has: Resin substrate layer; a thin film transistor layer provided on the resin substrate layer, wherein an inorganic insulating film, a wiring layer, and a planarization film are sequentially stacked; and a light-emitting element layer, which is provided on the thin film transistor layer, corresponds to a plurality of sub-pixels constituting the display area, and is sequentially stacked with a plurality of first electrodes, a plurality of light-emitting functional layers, and a common second electrode; A frame area is provided around the display area. A terminal portion is provided at the end of the frame area. A bent portion is provided between the display area and the terminal portion in a manner extending in one direction. A plurality of display wirings are provided in the display area so as to extend parallel to each other. On the terminal portion, a plurality of terminals are provided along the extending direction of the bent portion. The inorganic insulating film is provided with a slit at the bent portion so as to extend in the direction in which the bent portion extends and expose the surface of the resin substrate layer. Another planarizing film is provided on both sides of the outer side of the bent portion so as to fill both ends of the slit in the width direction and expose the surface of the resin substrate layer in the middle portion between the two ends. On the other planarizing film and the resin substrate layer, a plurality of routing wirings are provided on both sides of the bending portion and the outer side of the bending portion, and the plurality of routing wirings extend parallel to each other in a direction intersecting with the extension direction of the bending portion, are electrically connected to the plurality of display wirings on the display area side, are electrically connected to the plurality of terminals on the terminal portion side, and are formed on the same layer with the wiring layer using the same material.

23. The display device according to claim 22, wherein: The side surface of the other planarizing film on the bent portion side is inclined in a forward tapered shape.

24. The display device according to claim 23, wherein: include: The angle between the side surface of the other planarizing film on the bent portion side and the surface of the resin substrate layer is 20° or less.

25. The display device according to any one of claims 22 to 24, characterized in that The plurality of routing wires are respectively covered by a plurality of protective insulating layers formed of the same material and in the same layer as the planarization film.

26. The display device according to claim 25, wherein: The plurality of protective insulating layers are covered with a reinforcing resin layer at both sides of the bent portion and outside the bent portion.

27. The display device according to any one of claims 22 to 26, characterized in that The resin substrate layer includes: a first resin substrate layer disposed on a side opposite to the thin film transistor layer; a second resin substrate layer provided on the thin film transistor layer side; and The intra-substrate inorganic insulating film is provided between the first resin substrate layer and the second resin substrate layer.

28. The display device according to claim 27, wherein: The slits are also provided on the surface layer of the second resin substrate layer.

29. The display device according to claim 28, wherein Both edge portions of the inorganic insulating film in which the slits are formed are provided in an eaves shape so as to protrude inwardly from the side walls of the surface layer of the second resin substrate layer.

30. The display device according to claim 29, wherein The other planarizing film is provided so as to fill the second resin substrate layer side of the eaves-shaped portions of both edge portions of the inorganic insulating film.

31. The display device according to any one of claims 22 to 30, characterized in that The display device further includes: a sealing film provided so as to cover the light-emitting element layer and comprising a first inorganic sealing film, an organic sealing film, and a second inorganic sealing film stacked in this order; A touch panel layer is provided on the sealing film and is sequentially stacked with a first touch wiring layer, an interlayer insulating film, a second touch wiring layer, and an overcoat film. The multiple routing wires are covered by a laminated film of a protective insulating layer and an outer coating on both sides of the outer side of the bending portion, and are covered by a reinforcing resin layer at the bending portion, wherein the protective insulating layer and the planarizing film are formed of the same material and on the same layer, and the outer coating and the outer coating film are formed of the same material and on the same layer.

32. The display device according to any one of claims 1 to 31, characterized in that Each of the light-emitting functional layers is an organic electroluminescent layer.

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