A layout correction method, system and computer medium

Abstract

The present application relates to the field of photoetching technology, and particularly relates to a layout correction method, system and computer medium, the layout correction method comprises the following steps: obtaining an initial layout comprising at least one target mask pattern and other mask patterns, obtaining coordinate values of line segments of the target mask pattern in the initial layout; obtaining shape features of the other mask patterns, generating a preset mask pattern which is different from the shape features and intersects the target mask pattern based on the coordinate values; marking the line segments in the target mask pattern which intersect the generated preset mask pattern as feature line segments; performing feature calculation on each line segment of all mask patterns and all line segments adjacent thereto, and recording the calculation results as feature values of each line segment; filtering out line segments having the same feature values as the feature line segments based on the recorded feature values, marking the line segments, and outputting the mask patterns in which the line segments are located as results. The efficiency of optical proximity correction is greatly improved.

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