Semiconductor laser element having interlayer hot exciton conversion layer

Abstract

The application provides a semiconductor laser element with an interlayer hot exciton conversion layer, and relates to the technical field of semiconductor optoelectronic devices, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer; an interlayer hot exciton conversion layer is arranged between the upper confinement layer and the electron blocking layer and between the lower confinement layer and the lower waveguide layer; in the charge transport process of the laser element, the interlayer hot exciton conversion layer forms a mismatched momentum, generates a large number of interlayer hot excitons, and is converted into a tightly bound interlayer exciton after the release of extra energy, thereby improving the peak gain of the active layer of the laser element and improving thermal degradation, reducing non-radiative recombination centers, improving the refractive index dispersion of the laser element, improving the confinement factor of the laser element, improving the mode gain, improving the radiation recombination efficiency of the active layer of the laser element, reducing the excitation threshold of the laser element, and improving the optical power and the slope efficiency of the laser element.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic device technology, and more specifically, to a semiconductor laser element having an interlayer thermal exciton conversion layer. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization. Lasers differ significantly from nitride semiconductor light-emitting diodes (LEDs): 1) Lasers are generated by stimulated emission of charge carriers, resulting in a smaller spectral half-width and very high brightness; a single laser can have output power in the W range, while nitride LEDs are generated spontaneously, with output power in the mW range; 2) Lasers operate at current densities of KA / cm², more than two orders of magnitude higher than nitride LEDs, leading to stronger electron leakage, more severe Auger recombination, stronger polarization effects, and more severe electron-hole mismatch, resulting in more severe efficiency degradation and the Droop effect; 3) Light-emitting diodes... The spontaneous transition radiation of a light-emitting diode (LED) is incoherent light that transitions from a high energy level to a low energy level without external influence. In contrast, a laser emits stimulated transition radiation, where the energy of the induced photon must be equal to the energy difference between the transitioning electron and the induced photon to produce coherent light. 4) The principles are different: LEDs emit light through radiative recombination when electrons and holes transition to quantum wells or pn junctions under external voltage. Lasers, on the other hand, require certain lasing conditions to be met. This requires the carriers in the active region to be reversed, and the stimulated emission light to oscillate back and forth in the resonant cavity. The propagation of the light in the gain medium amplifies the light, and the threshold condition must be met so that the gain is greater than the loss, ultimately resulting in the output of laser light. Nitride semiconductor lasers have the following problems: 1) High absorption loss in the optical waveguide. Inherent carbon impurities in p-type semiconductors can compensate for acceptors and destroy p-type structure. The low ionization rate of p-type doping and the large amount of unionized Mg acceptor impurities can lead to an increase in internal optical loss. In addition, the refractive index dispersion and confinement factor of the laser decrease with increasing wavelength, resulting in a decrease in the mode gain of the laser. 2) Increased In content in the quantum well will produce In content fluctuations and strain, which will broaden the laser gain spectrum, reduce the peak gain, increase the threshold current and reduce the slope efficiency. Increased In content in the quantum well will worsen the thermal stability. High-temperature p-type semiconductor and confinement layer growth will cause thermal degradation of the active layer, reducing the quality of the active layer and the interface quality. High defect density inside the active layer, large inter-solution gap between InN and GaN, InN phase separation segregation, thermal degradation, and unsatisfactory crystal quality will lead to unsatisfactory quantum well quality and interface quality, and enhance non-radiative recombination centers. Summary of the Invention

[0003] The purpose of this invention is to provide a semiconductor laser element with an interlayer thermal exciton conversion layer, which solves the problems existing in the prior art.

[0004] A semiconductor laser device with an interlayer thermal exciton conversion layer comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. An interlayer thermal exciton conversion layer is provided between the upper confinement layer and the electron blocking layer and between the lower confinement layer and the lower waveguide layer. The active layer is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10–80 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10–120 angstroms.

[0005] As a preferred embodiment of the present invention, the interlayer thermal exciton conversion layer is 1D-Bi2S3@2D-MoS2 or 1D-In2O3@2D-K4Nb6O. 17 Magic-angle multidimensional van der Waals heterojunctions of any one or any combination of 1D-MoS2@2D-gC3N4, 1D-CoSe2@2D-BiOCl, 1D-WO3@2D-BiCuSeO, and 1D-MnO2@2D-NiCo2O4.

[0006] As a preferred technical solution of the present invention, any combination of the interlayer thermal exciton conversion layers includes the following binary combinations of magic-angle multidimensional van der Waals heterojunctions: 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 , 1D-Bi2S3@2D-MoS2 / 1D-MoS2@2D-gC3N4, 1D-Bi2S3@2D-MoS2 / 1D-CoSe2@2D-BiOCl, 1D-Bi2S3@ 2D-MoS2 / 1D-WO3@2D-BiCuSeO, 1D-Bi2S3@2D-MoS2 / 1D-MnO2@2D-NiCo2O4, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4, 1D-In2O3@2D-K4Nb6O 17 / 1D-CoSe2@2D-BiOCl, 1D-In2O3@2D-K4Nb6O 17 / 1D-MnO2@2D-NiCo2O4, 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl, 1D-MoS2@2D-gC3N4 / 1D-WO3@2D-BiCuSeO, 1D-MoS2@2D-gC3N4 / 1D-MnO2@2D- NiCo2O4, 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO, 1D-CoSe2@2D-BiOCl / 1D-MnO2@2D-NiCo2O4, 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4.

[0007] As a preferred technical solution of the present invention, any combination of the interlayer thermal exciton conversion layers includes the following ternary combinations of magic-angle multidimensional van der Waals heterojunctions: 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-CoSe2@2D-BiOCl, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-WO3@2D-BiCuSeO, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MnO2@2D-NiCo2O4, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-WO3@2D-BiCuSeO, 1D-In2O3@2D-K4Nb6O17 / 1D-MoS2@2D-gC3N4 / 1D-MnO2@2D-NiCo2O4, 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO, 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-MnO2@2D-NiCo2O4, 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4.

[0008] As a preferred technical solution of the present invention, any combination of the interlayer thermal exciton conversion layers includes the following quaternary combinations of magic-angle multidimensional van der Waals heterojunctions:

[0009] 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOC1, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-WO3@2D-BiCuSeO, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-MnO2@2D-NiCo2O4, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOC1 / 1D-WO3@2D-BiCuSeO, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOC1 / 1D-MnO2@2D-NiCo2O4, 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOC1 / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4.

[0010] As a preferred technical solution of the present invention, any combination of the interlayer thermal exciton conversion layers includes the following five-element combinations of magic-angle multidimensional van der Waals heterojunctions:

[0011] 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO,

[0012] 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-MnO2@2D-NiCo2O4,

[0013] 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4,

[0014] 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4,

[0015] 1D-Bi2S3@2D-MoS2 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-Bi0Cl / 1D-WO3@2D-BiCuSe0 / 1D-MnO2@2D-NiCo2O4,

[0016] 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4,

[0017] 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4.

[0018] As a preferred technical solution of the present invention, an interlayer thermal exciton conversion layer is provided between the active layer and the lower waveguide layer, and between the lower confinement layer and the lower waveguide layer. During the charge transport process of the laser element, the interlayer thermal exciton conversion layer forms mismatched momentum, generates a large number of interlayer thermal excitons, and converts them into tightly bound interlayer excitons after the additional energy is released. This improves the peak gain of the active layer of the laser element and improves thermal degradation, reduces non-radiative recombination centers, improves the refractive index dispersion of the laser element, increases the confinement factor of the laser element, and increases the mode gain, thereby improving the radiative recombination efficiency of the active layer of the laser element, reducing the excitation threshold of the laser element, and improving the optical power and slope efficiency of the laser element.

[0019] As a preferred embodiment of the present invention, the thickness of the interlayer thermal exciton conversion layer is 5–500 nm.

[0020] As a preferred embodiment of the present invention, the lower confining layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50–5000 nm and a Si doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0021] As a preferred embodiment of the present invention, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50–1000 nm and a Si doping concentration of 1E16–5E19 cm⁻¹. -3 The electron blocking layer and the upper confinement layer are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20–1000 nm and a Mg doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0022] As a preferred technical solution of the present invention, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0023] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0024] In the solution of this invention:

[0025] Compared to existing technologies, an interlayer thermal exciton conversion layer is provided between the active layer and the lower waveguide layer, as well as between the lower confinement layer and the lower waveguide layer. During the charge transport process of the laser element, the interlayer thermal exciton conversion layer generates mismatched momentum, producing a large number of interlayer thermal excitons. After the additional energy is released, these excitons are converted into tightly bound interlayer excitons, which improve the peak gain of the active layer of the laser element and improve thermal degradation, reduce non-radiative recombination centers, improve the refractive index dispersion of the laser element, increase the confinement factor of the laser element, and increase the mode gain. This improves the radiative recombination efficiency of the active layer of the laser element, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of a semiconductor laser element with an interlayer thermal exciton conversion layer provided by the present invention.

[0027] The image shows:

[0028] 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer; 105: Electron blocking layer; 106: Upper confinement layer; 107: Interlayer thermal exciton conversion layer. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0030] Therefore, the following detailed description of embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely illustrates some embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0031] It should be noted that, unless otherwise specified, the embodiments and features and technical solutions in the embodiments of the present invention can be combined with each other.

[0032] Example 1

[0033] Please see Figure 1 This embodiment provides a technical solution: a semiconductor laser device with an interlayer thermal exciton conversion layer, comprising, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. An interlayer thermal exciton conversion layer 107 is provided between the upper confinement layer 106 and the electron blocking layer 105 and between the lower confinement layer 101 and the lower waveguide layer 102. The active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 3≥m≥1. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 to 80 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 to 120 angstroms.

[0034] The interlayer thermal exciton conversion layer 107 is 1D-Bi2S3@2D-MoS2 or 1D-In2O3@2D-K4Nb g O 17 Magic-angle multidimensional van der Waals heterojunction of any one of 1D-MoS2@2D-gC3N4, 1D-CoSe2@2D-BiOCl, 1D-WO3@2D-BiCuSeO, or 1D-MnO2@2D-NiCo2O4.

[0035] During the charge transport process of the laser element, the interlayer thermal exciton conversion layer 107 generates mismatched momentum, producing a large number of interlayer thermal excitons. After the additional energy is released, these excitons are converted into tightly bound interlayer excitons, which improve the peak gain of the active layer of the laser element and improve thermal degradation, reduce non-radiative recombination centers, improve the refractive index dispersion of the laser element, increase the confinement factor of the laser element, and increase the mode gain. This improves the radiative recombination efficiency of the active layer of the laser element, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0036] The thickness of the interlayer thermal exciton conversion layer 107 is 5–500 nm.

[0037] The lower confinement layer 101 is any one or any combination of GaN, AlCaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50–5000 nm and a Si doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0038] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50–1000 nm and a Si doping concentration of 1E16–5E19 cm⁻¹. -3 The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20–1000 nm and a Mg doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0039] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0040] Example 2

[0041] Please see Figure 1This embodiment provides a technical solution: a semiconductor laser element with an interlayer thermal exciton conversion layer, which, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. An interlayer thermal exciton conversion layer 107 is provided between the upper confinement layer 106 and the electron blocking layer 105 and between the lower confinement layer 101 and the lower waveguide layer 102. The active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 3≥m≥1. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 to 80 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 to 120 angstroms.

[0042] During the charge transport process of the laser element, the interlayer thermal exciton conversion layer 107 generates mismatched momentum, producing a large number of interlayer thermal excitons. After the additional energy is released, these excitons are converted into tightly bound interlayer excitons, which improve the peak gain of the active layer of the laser element and improve thermal degradation, reduce non-radiative recombination centers, improve the refractive index dispersion of the laser element, increase the confinement factor of the laser element, and increase the mode gain. This improves the radiative recombination efficiency of the active layer of the laser element, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0043] Any combination of the interlayer thermal exciton conversion layer 107 includes the following binary combinations of magic-angle multidimensional van der Waals heterojunctions: 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 , 1D-Bi2S3@2D-MoS2 / 1D-MoS2@2D-gC3N4, 1D-Bi2S3@2D-MoS2 / 1D-CoSe2@2D-BiOCl, 1D-Bi2S3@ 2D-MoS2 / 1D-WO3@2D-BiCuSeO, 1D-Bi2S3@2D-MoS2 / 1D-MnO2@2D-NiCo2O4, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4, 1D-In2O3@2D-K4Nb6O 17 / 1D-CoSe2@2D-BiOC1, 1D-In2O3@2D-K4Nb6O 17 / 1D-MnO2@2D-NiCo2O4, 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl, 1D-MoS2@2D-gC3N4 / 1D-WO3@2D-BiCuSeO, 1D-MoS2@2D-gC3N4 / 1D-MnO2@2D- NiCo2O4, 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO, 1D-CoSe2@2D-BiOCl / 1D-MnO2@2D-NiCo2O4, 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4.

[0044] The thickness of the interlayer thermal exciton conversion layer 107 is 5–500 nm.

[0045] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInCaN, AlN, InN, and AlInN, with a thickness of 50–5000 nm and a Si doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0046] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50–1000 nm and a Si doping concentration of 1E16–5E19 cm⁻¹. -3 The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20–1000 nm and a Mg doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0047] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, CaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0048] Example 3

[0049] Please see Figure 1This embodiment provides a technical solution: a semiconductor laser element with an interlayer thermal exciton conversion layer, which, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. An interlayer thermal exciton conversion layer 107 is provided between the upper confinement layer 106 and the electron blocking layer 105 and between the lower confinement layer 101 and the lower waveguide layer 102. The active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 3≥m≥1. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 to 80 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 to 120 angstroms.

[0050] During the charge transport process of the laser element, the interlayer thermal exciton conversion layer 107 generates mismatched momentum, producing a large number of interlayer thermal excitons. After the additional energy is released, these excitons are converted into tightly bound interlayer excitons, which improve the peak gain of the active layer of the laser element and improve thermal degradation, reduce non-radiative recombination centers, improve the refractive index dispersion of the laser element, increase the confinement factor of the laser element, and increase the mode gain. This improves the radiative recombination efficiency of the active layer of the laser element, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0051] Any combination of the interlayer thermal exciton conversion layer 107 includes the following ternary combinations of magic-angle multidimensional van der Waals heterojunctions: 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-CoSe2@2D-BiOCl, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-WO3@2D-BiCuSeO, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MnO2@2D-NiCo2O4, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-WO3@2D-BiCuSeO, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-MnO2@2D-NiCo2O4, 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO, 1D-MoS2@2 D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-MnO2@2D-NiCo2O4, 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4.

[0052] The thickness of the interlayer thermal exciton conversion layer 107 is 5–500 nm.

[0053] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50–5000 nm and a Si doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0054] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50–1000 nm and a Si doping concentration of 1E16–5E19 cm⁻¹. -3 The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20–1000 nm and a Mg doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0055] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0056] Example 4

[0057] Please see Figure 1This embodiment provides a technical solution: a semiconductor laser element with an interlayer thermal exciton conversion layer, which, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. An interlayer thermal exciton conversion layer 107 is provided between the upper confinement layer 106 and the electron blocking layer 105 and between the lower confinement layer 101 and the lower waveguide layer 102. The active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 3≥m≥1. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 to 80 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 to 120 angstroms.

[0058] During the charge transport process of the laser element, the interlayer thermal exciton conversion layer 107 generates mismatched momentum, producing a large number of interlayer thermal excitons. After the additional energy is released, these excitons are converted into tightly bound interlayer excitons, which improve the peak gain of the active layer of the laser element and improve thermal degradation, reduce non-radiative recombination centers, improve the refractive index dispersion of the laser element, increase the confinement factor of the laser element, and increase the mode gain. This improves the radiative recombination efficiency of the active layer of the laser element, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0059] Any combination of the interlayer thermal exciton conversion layer 107 includes the following quaternary combinations of magic-angle multidimensional van der Waals heterojunctions: 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-WO3@2D-BiCuSeO, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-MnO2@2D-NiCo2O4, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-MnO2@2D-NiCo2O4, 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4.

[0060] The thickness of the interlayer thermal exciton conversion layer 107 is 5–500 nm.

[0061] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInCaN, AlN, InN, and AlInN, with a thickness of 50–5000 nm and a Si doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0062] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50–1000 nm and a Si doping concentration of 1E16–5E19 cm⁻¹. -3 The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20–1000 nm and a Mg doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0063] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0064] Example 5

[0065] Please see Figure 1This embodiment provides a technical solution: a semiconductor laser element with an interlayer thermal exciton conversion layer, which, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. An interlayer thermal exciton conversion layer 107 is provided between the upper confinement layer 106 and the electron blocking layer 105 and between the lower confinement layer 101 and the lower waveguide layer 102. The active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 3≥m≥1. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 to 80 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 to 120 angstroms.

[0066] During the charge transport process of the laser element, the interlayer thermal exciton conversion layer 107 generates mismatched momentum, producing a large number of interlayer thermal excitons. After the additional energy is released, these excitons are converted into tightly bound interlayer excitons, which improve the peak gain of the active layer of the laser element and improve thermal degradation, reduce non-radiative recombination centers, improve the refractive index dispersion of the laser element, increase the confinement factor of the laser element, and increase the mode gain. This improves the radiative recombination efficiency of the active layer of the laser element, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0067] Any combination of the interlayer thermal exciton conversion layer 107 includes the following pentagonal multidimensional van der Waals heterojunctions:

[0068] 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO,

[0069] 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOC1 / 1D-MnO2@2D-NiCo2O4,

[0070] 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4,

[0071] 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4,

[0072] 1D-Bi2S3@2D-MoS2 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4,

[0073] 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4,

[0074] 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4.

[0075] The thickness of the interlayer thermal exciton conversion layer 107 is 5–500 nm.

[0076] The lower confinement layer 101 is any one or any combination of CaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50–5000 nm and a Si doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0077] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50–1000 nm and a Si doping concentration of 1E16–5E19 cm⁻¹. -3 The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20–1000 nm and a Mg doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0078] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0079] Experimental Example 1:

[0080] The green laser experiment was conducted using the technical solution in Example 1, with the interlayer thermal exciton conversion layer being 1D-Bi2S3@2D-MoS2.

[0081] Experimental Example 2:

[0082] The green laser experiment was conducted using the technical solution described in Example 2, with the interlayer thermal exciton conversion layer being 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O. 17 Conduct experiments;

[0083] Experimental Example 3:

[0084] The green laser experiment was conducted using the technical solution described in Example 3, with the interlayer thermal exciton conversion layer being 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O. 17 Experiments were conducted using 1D-MoS2@2D-gC3N4;

[0085] Experiment Example 4:

[0086] The green laser experiment was conducted using the technical solution described in Example 4, with the interlayer thermal exciton conversion layer being 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O. 17 Experiments were conducted using / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl;

[0087] Experimental Example 5:

[0088] The green laser experiment was conducted using the technical solution described in Example 5, with the interlayer thermal exciton conversion layer being 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O. 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO. Experiments were conducted;

[0089] The data for Experiments 1-5 are as follows:

[0090] Green Laser - Project Experimental Example 1 Experiment Example 2 Experimental Example 3 Experiment Example 4 Experimental Example 5 average value Slope efficiency (W / A) 1.24 1.24 1.21 1.22 1.24 1.23 <![CDATA[Threshold current density (kA / cm 2 )]]> 1.00 0.98 0.97 0.96 0.99 0.98 Optical power (W) 1.11 1.13 1.11 1.14 1.11 1.12 Limiting factor (%) 2.37 2.37 2.36 2.39 2.41 2.38

[0091] The average values ​​of the data for the experimental limitation factors in Examples 1-5 are compared with those of conventional laser elements as follows:

[0092] Green Laser - Project Traditional lasers Laser of the present invention range of change Slope efficiency (W / A) 0.59 1.23 108％ <![CDATA[Threshold current density (kA / cm 2 )]]> 1.97 0.98 -50％ Optical power (W) 0.63 1.12 78％ Limiting factors 1.13％ 2.38％ 111％

[0093] The slope efficiency of the green laser element increased from 0.59 W / A to 1.23 W / A, an improvement of 108%; the threshold current density increased from 1.97 kA / cm². 2 Reduced to 0.98 kA / cm 2 The change was 50%, the optical power increased from 0.63W to 1.12W, a change of 78%, and the confinement factor increased from 1.13 to 2.38%, a change of 111%.

[0094] Compared to existing technologies, interlayer thermal exciton conversion layers are provided between the upper confinement layer and the electron blocking layer, and between the lower confinement layer and the lower waveguide layer. During the charge transport process of the laser element, the interlayer thermal exciton conversion layer generates mismatched momentum, producing a large number of interlayer thermal excitons. After the additional energy is released, these excitons are converted into tightly bound interlayer excitons, which improve the peak gain of the active layer of the laser element and improve thermal degradation, reduce non-radiative recombination centers, improve the refractive index dispersion of the laser element, increase the confinement factor of the laser element, and increase the mode gain. This improves the radiative recombination efficiency of the active layer of the laser element, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0095] The above embodiments are only used to illustrate the present invention and are not intended to limit the technical solutions described herein. Although the present invention has been described in detail with reference to the above embodiments, the present invention is not limited to the specific embodiments described above. Therefore, any modifications or equivalent substitutions to the present invention, as well as all technical solutions and improvements that do not depart from the spirit and scope of the invention, are covered within the scope of the claims of the present invention.

Claims

1. A semiconductor laser device having an interlayer thermal exciton conversion layer, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that: An interlayer thermal exciton conversion layer (107) is provided between the upper confinement layer (106) and the electron blocking layer (105) and between the lower confinement layer (101) and the lower waveguide layer (102). The active layer (103) is a periodic structure composed of a well layer and a barrier layer, with a period number of 3≥m≥1. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10~80 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10~120 angstroms.

2. A semiconductor laser element with an interlayer thermal exciton conversion layer as described in claim 1, characterized in that, During the charge transport process of the laser element, the interlayer thermal exciton conversion layer (107) forms a mismatched momentum, generates a large number of interlayer thermal excitons, and converts them into tightly bound interlayer excitons after the additional energy is released, thereby improving the radiative recombination efficiency of the active layer of the laser element, reducing the excitation threshold of the laser element, and improving the optical power and slope efficiency of the laser element.

3. A semiconductor laser element with an interlayer thermal exciton conversion layer as described in claim 2, characterized in that, The interlayer thermal exciton conversion layer (107) is 1D-Bi2S3@2D-MoS2 or 1D-In2O3@2D-K4Nb6O 17 Magic-angle multidimensional van der Waals heterojunctions of any one or any combination of 1D-MoS2@2D-gC3N4, 1D-CoSe2@2D-BiOCl, 1D-WO3@2D-BiCuSeO, and 1D-MnO2@2D-NiCo2O4.

4. A semiconductor laser element with an interlayer thermal exciton conversion layer as described in claim 2, characterized in that, Any combination of the interlayer thermal exciton conversion layer (107) includes the following binary combinations of magic-angle multidimensional van der Waals heterojunctions: 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 , 1D-Bi2S3@2D-MoS2 / 1D-MoS2@2D-gC3N4, 1D-Bi2S3@2D-MoS2 / 1D-CoSe2@2D-BiOCl, 1D-Bi2S3@2D-MoS2 / 1D-WO3@2D-BiCuSeO, 1D-Bi2S3@2D-MoS2 / 1D-MnO2@2D-NiCo2O4, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4, 1D-In2O3@2D-K4Nb6O 17 / 1D-CoSe2@2D-BiOCl, 1D-In2O3@2D-K4Nb6O 17 / 1D-MnO2@2D-NiCo2O4, 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl, 1D-MoS2@2D-gC3N4 / 1D-WO3@2D-BiCuSeO, 1D-MoS2@2D-gC3N4 / 1D-MnO2@2D-NiCo2O4, 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO, 1D-CoSe2@2D-BiOCl / 1D-MnO2@2D-NiCo2O4, 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4.

5. A semiconductor laser element having an interlayer thermal exciton conversion layer as described in claim 2, characterized in that, Any combination of the interlayer thermal exciton conversion layers (107) includes the following ternary combinations of magic-angle multidimensional van der Waals heterojunctions: 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 1D-CoSe2@2D-BiOCl, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-WO3@2D-BiCuSeO, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 1D-MnO2@2D-NiCo2O4, 1D-In2O3@2D-K4Nb6O 17 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-WO3@2D-BiCuSeO, 1D-In2O3@2D-K4Nb6O 17 1D-MoS2@2D-gC3N4 / 1D-MnO2@2D-NiCo2O4, 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO, 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-MnO2@2D-NiCo2O4, 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4 6. A semiconductor laser element having an interlayer thermal exciton conversion layer as described in claim 2, characterized in that, Any combination of the interlayer thermal exciton conversion layer (107) includes the following quaternary combinations of magic-angle multidimensional van der Waals heterojunctions: 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-WO3@2D-BiCuSeO, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-MnO2@2D-NiCo2O4, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-MnO2@2D-NiCo2O4, 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4.

7. A semiconductor laser element having an interlayer thermal exciton conversion layer as described in claim 2, characterized in that, Any combination of the following five-dimensional combination of the following five-dimensional combination of magic angles and combinations of different combinations: 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-MnO2@2D-NiCo2O4, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4, 1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4, 1D-Bi2S3@2D-MoS2 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4, 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4,1D-Bi2S3@2D-MoS2 / 1D-In2O3@2D-K4Nb6O 17 / 1D-MoS2@2D-gC3N4 / 1D-CoSe2@2D-BiOCl / 1D-WO3@2D-BiCuSeO / 1D-MnO2@2D-NiCo2O4.

8. A semiconductor laser element having an interlayer thermal exciton conversion layer as described in claim 1, characterized in that, The thickness of the interlayer thermal exciton conversion layer (107) is 5~500 nm, and the lower confinement layer (101) is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50~5000 nm and a Si doping concentration of 1E18~1E20 cm⁻¹. -3 .

9. A semiconductor laser element having an interlayer thermal exciton conversion layer as described in claim 1, characterized in that, The lower waveguide layer (102) and the upper waveguide layer (104) are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50~1000nm and a Si doping concentration of 1E16~5E19 cm⁻¹. -3 The electron blocking layer (105) and the upper confinement layer (106) are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20~1000 nm and a Mg doping concentration of 1E18~1E20 cm⁻¹. -3 .

10. A semiconductor laser element having an interlayer thermal exciton conversion layer as described in claim 1, characterized in that, The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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