Method for processing broken wire of silicon wafer cutting

Abstract

The application discloses a kind of silicon wafer cutting broken wire processing method, comprising: after the first wire net broken wire, the silicon rod being cut is lifted;The end section of the first wire net is retained, and the part except the end section on the first wire net is cut off, wherein the length of the end section of the first wire net is less than 0.15 times the length of the silicon rod;Second wire net is formed by the end section of the first wire net, and the end of the silicon rod is cut by the second wire net to polish the diamond wire with the preset line amount value;Through the diamond wire after polishing, rewiring is carried out, the third wire net is formed, and the silicon rod is continuously cut by the third wire net.The silicon rod is continuously cut by the diamond wire after polishing in the embodiment of the application, so that the wear condition of the diamond wire used when the silicon rod is cut twice is basically consistent, and the silicon wafer color difference is reduced.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic technology, and in particular to a method for processing broken wires during silicon wafer cutting. Background Technology

[0002] Currently, silicon rods are typically cut into silicon wafers using diamond wire. The cutting method usually employs multi-wire cutting. In multi-wire cutting, wire mesh is laid on multiple main rollers, and the silicon rod is cut through this wire mesh.

[0003] During the process of dicing silicon rods into silicon wafers, wire mesh is prone to breakage. In the event of a breakage during the initial dicing of a newly laid wire mesh, the silicon rod must be lifted, and then new diamond wire must be used to reconnect and rewire the mesh.

[0004] However, when cutting the uncut silicon rod after rewiring, the appearance of the area cut before the wire break on the silicon wafer will be inconsistent with the area cut after rewiring because the silicon rod has undergone two different cuts. This will result in color difference in the silicon wafer after further cutting. Summary of the Invention

[0005] This invention provides a method for handling broken wires in silicon wafer cutting, aiming to solve the technical problem of color difference in silicon wafers after further cutting in the prior art.

[0006] This invention provides a method for handling broken wires during silicon wafer dicing, comprising:

[0007] After the first wire is disconnected, lift the cut silicon rod;

[0008] The end section of the first wire mesh is retained, and the portion of the first wire mesh other than the end section is cut off, wherein the length of the end section of the first wire mesh is less than 0.15 times the length of the silicon rod;

[0009] A second wire mesh is formed through the end section of the first wire mesh, and the end of the silicon rod is cut through the second wire mesh to polish out diamond wire with a preset wire amount value.

[0010] The silicon rod is then rewired using polished diamond wire to form a third wire mesh, which is then used to continue cutting the silicon rod.

[0011] Optionally, the end segment of the first wire mesh includes the tail segment of the first wire mesh, and the end of the silicon rod includes the tail portion of the silicon rod;

[0012] The step of retaining the end segments of the first wire mesh and cutting off the portion of the first wire mesh excluding the end segments includes:

[0013] Retain the tail section of the first wire mesh, and cut off the portion of the first wire mesh except for the tail section;

[0014] The process of forming a second mesh through the end section of the first mesh and cutting the end of the silicon rod through the second mesh includes:

[0015] The end of the first wire mesh is connected to the diamond wire drawn from the wire feeding wheel to form a second wire mesh, and the end of the silicon rod is cut through the second wire mesh.

[0016] Optionally, after the first wire mesh is broken and after the step of lifting the cut silicon rod, and before the step of retaining the tail section of the first wire mesh and cutting off the portion of the first wire mesh excluding the tail section, the method further includes:

[0017] Record the first cutting information when the first wire network breaks;

[0018] The step of cutting the tail of the silicon rod through the second wire mesh includes:

[0019] Determine the second cutting information based on the first cutting information;

[0020] Based on the second cutting information, the tail of the silicon rod is cut through the second wire mesh using a bidirectional reciprocating cutting method.

[0021] Optionally, the first cutting information includes a first cutting depth and a first number of reciprocating rounds, and the second cutting information includes a second number of reciprocating rounds, a second cutting depth, the amount of wire fed per round, and a preset amount of wire returned per round;

[0022] The step of determining the second cutting information based on the first cutting information includes:

[0023] The second cutting depth is determined based on the first cutting depth;

[0024] The second number of rounds is determined based on the first number of rounds;

[0025] The incoming line per round is determined based on the second number of reciprocating rounds, the preset line quantity value, and the preset return line quantity per round.

[0026] Optionally, the second number of reciprocating rounds is determined by the following formula:

[0027] M2 = M1 × 2 + 5

[0028] Where M2 is the second number of rounds, and M1 is the first number of rounds.

[0029] Optionally, the incoming line amount per round is determined by the following formula:

[0030] L1 = L0 / M2 + L2

[0031] Wherein, L0 is the preset line quantity value, L1 is the line quantity received per round, and L2 is the preset line quantity returned per round.

[0032] Optionally, the second wire mesh is laid on multiple main rollers, and the length of the second wire mesh is 60mm-80mm along the length direction of the main rollers.

[0033] Optionally, the step of connecting the end of the first wire mesh to the diamond wire drawn from the pay-off reel to form the second wire mesh includes:

[0034] Move the feed guide wheel bracket to the tail section of the first wire mesh, wherein the feed guide wheel bracket is equipped with a feed guide wheel;

[0035] The end of the first wire mesh is connected to the end of the wire of the infeed guide wheel to form a first knot, thereby connecting the diamond wire drawn out by the pay-off wheel;

[0036] The first line is transferred to the take-up reel to form the second line net.

[0037] Optionally, the process of rewiring the polished diamond wire to form a third wire mesh includes:

[0038] Turn the diamond wire, with the preset wire weight at the center of the take-up reel, to the feed reel;

[0039] Cut off the inlet of the second wire mesh and turn the end of the wire at the inlet of the second wire mesh to the inlet of the main roller;

[0040] Reset the wire feed guide wheel bracket, and connect the wire end that has rotated to the wire feed end of the main roller to the wire feed guide wheel to form a second knot;

[0041] The second wire is transferred to the output end of the main roller to form a third wire mesh.

[0042] Optionally, the step of continuing to cut the silicon rod through the third wire mesh includes:

[0043] Press down on the silicon rod to embed the third wire mesh into the slit of the silicon rod;

[0044] The silicon rod was cut according to the original cutting parameters.

[0045] In this embodiment of the invention, the end of the silicon rod is cut using a second wire mesh, which can grind diamond wire with a preset wire density. The ground diamond wire restores the wear condition when the first wire mesh broke. Continuing to cut the silicon rod with the ground diamond wire ensures that the wear condition of the diamond wire used in the two cuts is essentially the same, avoiding the cutting differences before and after the first wire mesh breakage, thereby reducing silicon wafer color difference and improving silicon wafer yield. Furthermore, since the length of the end segment of the first wire mesh is less than 0.15 times the length of the silicon rod, when cutting the silicon rod using the second wire mesh formed through the end segment of the first wire mesh, only the end of the silicon rod is cut. That is, only the end of the silicon rod is used to grind the diamond wire; other parts of the silicon rod besides the end do not participate in the diamond wire grinding. Therefore, there is no color difference after being cut by the third wire mesh, meaning that discarding the end of the silicon rod saves most of the silicon rod.

[0046] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention, it can be implemented according to the contents of the specification. In order to make the above and other objects, features and advantages of the present invention more obvious and understandable, specific embodiments of the present invention are described below. Attached Figure Description

[0047] Figure 1 This is a flowchart of the steps in the silicon wafer cutting wire breakage treatment method provided in an embodiment of the present invention;

[0048] Figure 2 This is a schematic diagram of the structure of the first wire mesh provided in an embodiment of the present invention;

[0049] Figure 3 This is a schematic diagram of the structure of the second wire mesh provided in an embodiment of the present invention;

[0050] Figure 4 A schematic diagram of the structure of the third wire mesh provided in an embodiment of the present invention.

[0051] Figure label:

[0052] 10-Silicon rod, 20-Main roller, 21-Inlet end, 22-Outlet end, 30-Inlet guide roller bracket. Detailed Implementation

[0053] Exemplary embodiments of the invention will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this invention will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0054] Reference Figure 1This invention discloses a method for processing broken wires during silicon wafer dicing, comprising:

[0055] Step 101: After the first wire is disconnected, lift the cut silicon rod.

[0056] Specifically, silicon rods are cut into silicon wafers using a slicing machine. (See reference...) Figure 2 The slicing machine includes a feed reel, a take-up reel, and multiple main rollers 20. Diamond wire drawn from the feed reel is wound onto the take-up reel, and the diamond wire is wound into a wire mesh on the main rollers 20 between the feed and take-up reels. The main rollers 20 are rotatable, and the number of main rollers 20 can be set to two. A liftable crystal holder is provided above the wire mesh, and the silicon rod 10 is fixed on the crystal holder. By using the wire mesh to cut the silicon rod 10, it can be cut into several silicon wafers. If a wire breaks during the first wire mesh cutting process of the silicon rod 10, the silicon rod 10 being cut is lifted above the first wire mesh by the crystal holder, so that the silicon rod 10 is detached from the first wire mesh.

[0057] Step 102: Keep the end segments of the first wire mesh and cut off the portion of the first wire mesh other than the end segments.

[0058] Specifically, refer to Figure 4 The main roller 20 has an inlet end 21 and an outlet end 22 arranged opposite to each other. The end section of the first wire mesh can be the head section of the first wire mesh near the inlet end 21 or the tail section of the first wire mesh near the outlet end 22. Along the length direction of the main roller 20, the length of the end section of the first wire mesh is less than 0.15 times the length of the silicon rod. When the length of the silicon rod is 720 mm, the length of the end section of the first wire mesh can be 60 mm to 80 mm.

[0059] Step 103: Form a second wire mesh through the end section of the first wire mesh, and cut the end of the silicon rod through the second wire mesh to polish out diamond wire with a preset wire quantity value.

[0060] Specifically, the length of the second mesh is the same as the length of the first mesh, and the length of the second mesh can be 60mm-80mm. The end of the silicon rod 10 cut by the second mesh can be the head of the silicon rod 10 near the inlet end 21 or the tail of the silicon rod 10 near the outlet end 22. The length of the end of the silicon rod 10 cut by the second mesh is 60mm-80mm. When the end segment of the first mesh is the tail segment of the first mesh, the formed second mesh is as follows: Figure 3 As shown, the second wire mesh is used to cut the tail of the silicon rod.

[0061] When cutting the end of the silicon rod 10 using the second wire mesh, a bidirectional reciprocating cutting method can be adopted. This bidirectional reciprocating cutting includes a wire feeding stage and a wire return stage. During the cutting process, the main roller 20 rotates, causing the second wire mesh on it to move. In the wire feeding stage, the main roller 20 rotates forward, and the diamond wire on the feed reel enters the second wire mesh. In the wire return stage, the main roller 20 rotates in reverse, and the diamond wire on the take-up reel returns to the second wire mesh. The amount of wire fed in the wire feeding stage is greater than the amount of wire returned in the wire return stage. The amount of wire fed refers to the actual length the diamond wire travels in the wire feeding stage, and the amount of wire returned refers to the actual length the diamond wire returns in the wire return stage.

[0062] When cutting the end of the silicon rod 10 using a bidirectional reciprocating cutting method, by setting the wire feed amount in the feeding stage to be greater than the wire return amount in the return stage, the diamond wire on the feed wheel can be continuously transferred to the second wire mesh for polishing, thereby polishing out diamond wire with a preset wire quantity value. The preset wire quantity value can be determined according to the length of the silicon rod. For example, the preset wire quantity value can be greater than or equal to the wire mesh quantity required to cut a silicon rod of that length. For example, the wire mesh quantity required to cut a 720mm silicon rod is approximately 4.8km, so the preset wire quantity value is greater than or equal to 4.8km. In this embodiment of the invention, when the length of the silicon rod is 720mm, the preset wire quantity value is preferably 5km.

[0063] Step 104: Rewire the silicon rod using the polished diamond wire to form a third mesh, and then continue cutting the silicon rod using the third mesh.

[0064] Specifically, the wear condition of the diamond wire after polishing is basically the same as that of the diamond wire when the first mesh broke. This forms the third mesh, as shown below. Figure 4 As shown. The length of the third mesh formed after the diamond wire of the preset line value is rewired is greater than or equal to the length of the silicon rod 10, thereby satisfying the cutting of the silicon rod 10.

[0065] In this embodiment of the invention, the end of the silicon rod is cut using a second wire mesh, which can grind diamond wire with a preset wire density. The ground diamond wire restores the wear condition when the first wire mesh broke. Continuing to cut the silicon rod with the ground diamond wire ensures that the wear condition of the diamond wire used in the two cuts is essentially the same, avoiding the cutting differences before and after the first wire mesh breakage, thereby reducing silicon wafer color difference and improving silicon wafer yield. Furthermore, since the length of the end segment of the first wire mesh is less than 0.15 times the length of the silicon rod, when cutting the silicon rod using the second wire mesh formed through the end segment of the first wire mesh, only the end of the silicon rod is cut. That is, only the end of the silicon rod is used to grind the diamond wire; other parts of the silicon rod besides the end do not participate in the diamond wire grinding. Therefore, there is no color difference after being cut by the third wire mesh, meaning that discarding the end of the silicon rod saves most of the silicon rod.

[0066] The end segment of the first wire mesh includes the tail segment of the first wire mesh, and the end of the silicon rod includes the tail of the silicon rod.

[0067] Step 102 retains the end segments of the first wire mesh and cuts off the portion of the first wire mesh excluding the end segments, including: retaining the tail segments of the first wire mesh and cutting off the portion of the first wire mesh excluding the tail segments.

[0068] Step 103, which involves forming a second wire mesh through the end section of the first wire mesh and cutting the end of the silicon rod through the second wire mesh, includes: connecting the end of the tail section of the first wire mesh to the diamond wire drawn out by the wire feeding wheel to form a second wire mesh, and cutting the tail of the silicon rod through the second wire mesh.

[0069] Specifically, the tail section of the first wire mesh is close to the output end 22 of the main roller 20. When cutting off the portion of the first wire mesh other than the tail section, the wire can be cut from the end of the first wire mesh away from the tail section until it reaches the tail section. It should be noted that if the break in the first wire mesh is at the tail section, the break in the first wire mesh must be rotated to the middle position before cutting. After the portion of the first wire mesh other than the tail section is cut off, a wire end will remain at the tail section of the first wire mesh. This wire end needs to be connected to the diamond wire drawn from the pay-off wheel to form the second wire mesh. In this embodiment of the invention, the second wire mesh is formed through the tail section of the first wire mesh, which facilitates on-site operation.

[0070] After the first wire mesh breaks, after the step of lifting the cut silicon rod, and before the step of retaining the tail section of the first wire mesh and cutting off the part of the first wire mesh excluding the tail section, the process also includes: recording the first cutting information when the first wire mesh breaks.

[0071] Cutting the tail of a silicon rod using a second wire mesh includes: determining second cutting information based on first cutting information; and cutting the tail of the silicon rod using a bidirectional reciprocating cutting method based on the second cutting information.

[0072] Specifically, the first cutting information may include the first cutting depth and the first number of reciprocating turns. Different first cutting depths and first number of reciprocating turns at the time of the first wire mesh breakage result in different degrees of wear on the diamond wire at that time. The greater the first cutting depth and the greater the first number of reciprocating turns at the time of the first wire mesh breakage, the greater the wear on the diamond wire at that time. The second cutting information may include the second number of reciprocating turns, the second cutting depth, the amount of wire fed per turn, and the preset amount of wire returned per turn.

[0073] In this embodiment of the invention, the first wire mesh is used to cut the silicon rod in a bidirectional reciprocating cutting manner. By using a bidirectional reciprocating cutting method to cut the tail of the silicon rod through the second wire mesh, the actual cutting situation of the diamond wire on the first wire mesh can be reproduced as much as possible.

[0074] The first cutting information includes the first cutting depth and the first number of rounds; the second cutting information includes the second number of rounds, the second cutting depth, the amount of incoming lines per round, and the preset amount of outgoing lines per round.

[0075] Determining the second cutting information based on the first cutting information includes: determining the second cutting depth based on the first cutting depth; determining the second reciprocating round number based on the first reciprocating round number; and determining the incoming line amount per round based on the second reciprocating round number, a preset line quantity value, and a preset return line amount per round.

[0076] Specifically, the first cutting depth refers to the depth to which the first wire mesh has been cut when it breaks, and the first cutting depth can be less than 50mm. The first wire mesh is used to cut the silicon rod in a bidirectional reciprocating manner. One reciprocating wire feeding stage and one reciprocating wire returning stage constitute one reciprocating cycle. The number of the first reciprocating cycles refers to the number of reciprocating cycles that have been completed when the first wire mesh breaks.

[0077] The second wire mesh is used to cut the tail of the silicon rod in a bidirectional reciprocating cutting manner. The second reciprocating rounds refer to the number of reciprocating rounds the second wire mesh needs to run. The second cutting depth refers to the depth to which the second wire mesh needs to cut. The wire feed per round refers to the amount of wire fed during the feeding phase in a single reciprocating round. The preset return wire amount per round refers to the amount of wire returned during the return phase in a single reciprocating round. The preset return wire amount per round is determined in advance according to actual needs; for example, it can be set to 1000m. The wire feed per round is greater than the preset return wire amount per round. When cutting the tail of the silicon rod using the second wire mesh, the diamond wire moving speed and the silicon rod feeding speed can be set according to actual needs; for example, the diamond wire moving speed can be 35m / s, and the silicon rod feeding speed can be 2.5mm / min-3mm / min.

[0078] In this embodiment of the invention, the second cutting information is determined according to the first cutting information to ensure that the wear condition of the diamond wire after polishing is basically consistent with the wear condition of the diamond wire when the first wire mesh is broken.

[0079] The number of the second round of reciprocating motion is determined by the following formula:

[0080] M2 = M1 × 2 + 5

[0081] Where M2 is the number of the second rounds and M1 is the number of the first rounds.

[0082] In this embodiment of the invention, the formula is the optimal formula obtained through experimentation. When the second wire mesh cuts the tail of the silicon rod, the second reciprocating cycle number determined according to the formula is used, which can ensure that the wear condition of the diamond wire after polishing is basically the same as the wear condition of the diamond wire when the first wire mesh breaks.

[0083] The amount of incoming lines per round is determined by the following formula:

[0084] L1 = L0 / M2 + L2

[0085] Where L0 is the preset line amount, L1 is the line amount received per round, and L2 is the preset line amount returned per round.

[0086] Specifically, the units for L0, L1, and L2 are all meters (m), with L0 being 5000m and L2 being 1000m. L1-L2 represents the actual amount of wire transferred to the take-up reel in each round, and this amount of diamond wire transferred to the take-up reel is already polished. (L1-L2)×M2 is the amount of polished diamond wire after several rounds of the second reciprocating cycle. (L1-L2)×M2=L0 means that the amount of polished diamond wire after several rounds of the second reciprocating cycle is the preset wire amount value.

[0087] In this embodiment of the invention, the amount of wire fed per round determined by the above formula can ensure that when the second wire mesh cuts the tail of the silicon rod, and after running several rounds of the second reciprocating round, the amount of diamond wire polished is the preset amount of wire.

[0088] The second cutting depth is determined by the following formula:

[0089] H2 (mm) = H1 (mm) + 60 (mm)

[0090] Where H2 is the second cutting depth and H1 is the first cutting depth.

[0091] Specifically, the units for H2 and H1 are both mm. The formula for determining the second cutting depth is the optimal formula obtained through experiments. When the second wire mesh cuts the tail of the silicon rod, the second cutting depth determined according to this formula is used to ensure that the wear condition of the diamond wire after grinding is basically the same as the wear condition of the diamond wire when the first wire mesh breaks.

[0092] Reference Figure 3 The second wire mesh is laid on multiple main rollers 20, and the length of the second wire mesh is 60mm-80mm along the length direction of the main rollers 20.

[0093] Specifically, the length of the second wire mesh can be referenced. Figure 3 The length L3 shown can be any value within the range of 60mm-80mm, such as 60mm, 65mm, 70mm, 75mm, 80mm, etc., of the second wire mesh. In this embodiment of the invention, by setting the length of the second wire mesh within this range, the discarded silicon rod is avoided due to its excessive length, while also improving the grinding efficiency of the diamond wire.

[0094] Connecting the end of the first wire mesh to the diamond wire drawn from the pay-off reel to form the second wire mesh includes: moving the feed guide wheel bracket to the end of the first wire mesh; connecting the end of the end of the first wire mesh to the end of the feed guide wheel to form a first knot, thereby connecting to the diamond wire drawn from the pay-off reel; and turning the first knot to the take-up reel to form the second wire mesh.

[0095] Specifically, the slicing machine also includes an infeed guide roller bracket 30, on which an infeed guide roller is mounted. During wire feeding, the diamond wire on the pay-off roller is passed through the infeed guide roller and then wound onto the main roller 20. (Refer to...) Figure 2 The location of the incoming line of the first-line network and Figure 3 The position of the wire inlet of the second wire mesh is different. In order to facilitate the connection of the wire end of the first wire mesh to the diamond wire drawn from the pay-off wheel, the wire inlet guide wheel bracket 30 needs to be moved to the tail of the first wire mesh along the first direction. The first direction can be referred to as... Figure 2 The direction indicated by arrow A in the middle.

[0096] After cutting off the portion of the first wire mesh except for the end section, a wire end will remain at the infeed guide wheel. Connecting the wire end of the tail section of the first wire mesh to the wire end of the infeed guide wheel forms a first knot, thereby allowing the wire end of the tail section of the first wire mesh to be connected to the diamond wire drawn from the pay-off wheel. In this embodiment of the invention, by moving the infeed guide wheel bracket to the tail section of the first wire mesh, it is convenient for the wire end of the tail section of the first wire mesh to be connected to the diamond wire drawn from the pay-off wheel.

[0097] Step 104 involves rewiring the polished diamond wire to form a third wire mesh, including: rewinding the diamond wire with a preset wire weight from the take-up reel to the pay-off reel; cutting the wire inlet of the second wire mesh and turning the wire end at the wire inlet of the second wire mesh to the wire inlet end of the main roller; resetting the wire guide wheel bracket and connecting the wire end turned to the wire inlet end of the main roller with the wire end of the wire guide wheel to form a second knot; and turning the second knot to the wire outlet end of the main roller to form the third wire mesh.

[0098] Specifically, the diamond wire with a preset wire weight on the take-up reel is pre-polished. The main roller 20 can be reversed to transfer the polished diamond wire to the pay-off reel. Then, the wire inlet of the second wire mesh is cut off, and the wire end at the inlet of the second wire mesh is taped. The wire end at the inlet of the second wire mesh is pulled, causing the main roller 20 to reverse, thereby turning the wire end at the inlet of the second wire mesh to the inlet end 21 of the main roller 20. Then, the wire guide wheel bracket 30 is moved along the second direction to reset it. The second direction can be referred to... Figure 3 The direction indicated by arrow B in the middle.

[0099] Finally, the wire end at the inlet end 21 of the main roller 20 is connected to the wire end of the inlet guide wheel to form a second knot. The second knot is then transferred to the outlet end 22 of the main roller 20 to form a third wire mesh. It should be noted that since the tail of the silicon rod has already been used for polishing diamond wire, the tail of the silicon rod is unsuitable after cutting and needs to be discarded. Therefore, transferring the second knot to the outlet end 22 of the main roller 20 does not affect the continued cutting of the silicon rod by the third wire mesh. In this embodiment of the invention, by transferring the second knot to the outlet end 22 of the main roller 20, the cutting of other parts of the silicon rod except the tail can be avoided.

[0100] Reference Figure 2 The first wire mesh is inclinedly arranged on two main rollers 20. The main rollers 20 have grooves for winding diamond wire. The first wire mesh has an inlet side and an outlet side arranged opposite each other along the length of the main rollers 20. Along the length of the main rollers 20, the two ends of the inlet side of the first wire mesh are offset by n grooves, and the two ends of the outlet side are also offset by n grooves, where n is greater than or equal to 1. When recording the first cut information when the first wire mesh breaks, the number of grooves n of the first wire mesh also needs to be recorded. After forming the third wire mesh, it is necessary to check whether the number of grooves in the third wire mesh is consistent with the number of grooves in the first wire mesh.

[0101] Step 104, which involves continuing to cut the silicon rod using the third wire mesh, includes: pressing down on the silicon rod to embed the third wire mesh into the cut of the silicon rod; and continuing to cut the silicon rod according to the original cutting parameters.

[0102] Specifically, the original cutting parameters are the cutting parameters used during the first wire mesh cutting of the silicon rod. These parameters include the diamond wire moving speed, silicon rod feed speed, wire feed amount, and wire return amount. In this embodiment of the invention, by setting the silicon rod to continue cutting according to the original cutting parameters, it is possible to ensure that the cutting conditions of the silicon rod are consistent in the two cutting operations, thereby reducing the color difference of the silicon wafer.

[0103] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0104] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims. All of these forms are within the protection scope of the present invention.

Claims

1. A method for cutting and breaking a wire of a silicon wafer, characterized by, The method comprises the following steps: After the first wire net is broken, the cut silicon rod is lifted up; An end section of the first wire net is reserved, and the rest of the first wire net is cut off, wherein the length of the end section of the first wire net is less than 0.15 times the length of the silicon rod; A second wire net is formed by the end section of the first wire net, and the end of the silicon rod is cut by the second wire net to polish the diamond wire with a preset wire length; The diamond wire is rewired after polishing, a third wire net is formed, and the silicon rod is continuously cut by the third wire net; The end section of the first wire net includes the tail section of the first wire net; The second wire net is formed by connecting the end of the first wire net to the end of the wire guide wheel to form a first knot, and then transferring the first knot to the take-up wheel; The second wire net is laid on a plurality of main rollers; the third wire net is formed by rewiring the diamond wire after polishing, which includes reversing the diamond wire with a preset wire length from the take-up wheel to the pay-off wheel, cutting off the wire end of the second wire net, transferring the wire end of the second wire net to the wire inlet end of the main roller, resetting the wire guide wheel support, connecting the wire end of the wire guide wheel to the wire end of the wire guide wheel to form a second knot, and transferring the second knot to the wire outlet end of the main roller to form the third wire net.

2. The method of claim 1, wherein the step of cutting the wire is performed by a laser. The end of the silicon rod includes the tail of the silicon rod; The end section of the first wire net is reserved, and the rest of the first wire net is cut off, which includes: The tail section of the first wire net is reserved, and the rest of the first wire net is cut off; The end of the silicon rod is cut by the second wire net, which includes: The tail of the silicon rod is cut by the second wire net.

3. The method of claim 2, wherein the step of cutting the wire is performed by a laser. After the first wire net is broken, the cut silicon rod is lifted up, and before the tail section of the first wire net is reserved and the rest of the first wire net is cut off, the method further comprises the following steps: The first cutting information when the first wire net is broken is recorded; The end of the silicon rod is cut by the second wire net, which includes: The second cutting information is determined according to the first cutting information; According to the second cutting information, the tail of the silicon rod is cut by the second wire net in a bidirectional reciprocating cutting manner.

4. The method of claim 3, wherein the step of cutting the wire is performed by a laser. The first cutting information includes the first cutting depth and the first reciprocating round number, and the second cutting information includes the second reciprocating round number, the second cutting depth, the wire feeding amount per round, and the preset wire returning amount per round; The second cutting information is determined according to the first cutting information, which includes: The second cutting depth is determined according to the first cutting depth; The second reciprocating round number is determined according to the first reciprocating round number; The wire feeding amount per round is determined according to the second reciprocating round number, the preset wire length, and the preset wire returning amount per round.

5. The method of claim 4, wherein the step of cutting the wire is performed by a laser. The second reciprocating round number is determined by the following formula: M2=M1x2+5 Wherein, M2 is the second number of reciprocating rounds, M1 is the first number of reciprocating rounds.

6. The method of claim 5, wherein the step of cutting the wire is performed by a laser. The amount of wire feeding per round is determined by the following formula: L1=L0 / M2+L2 Wherein, L0 is the preset wire amount value, L1 is the amount of wire feeding per round, and L2 is the preset amount of wire returning per round.

7. The method of claim 2, wherein the step of cutting the wire is performed by a laser. The length of the second wire net is 60-80 mm along the length direction of the main roller.

8. The method of claim 1, wherein the step of cutting the wire is performed by a laser. The continuous cutting of the silicon rod by the third wire net comprises: Pressing down the silicon rod so that the third wire net is embedded into the cut seam of the silicon rod; Continuing to cut the silicon rod according to the original cutting parameters.

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