An inorganic compound crystal Yb 2x Sc 2(1-x) Si2O7 and a preparation method and application thereof
By preparing Yb3+-doped inorganic compound crystal Yb2xSc2(1-x)Si2O7, the high threshold problem caused by the high thermal population in Yb3+ lasers was solved, and high-power, low-threshold 1-micron band laser output was achieved.
CN117089929BActive Publication Date: 2026-06-16FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
- Filing Date
- 2022-05-11
- Publication Date
- 2026-06-16
Abstract
The application discloses an inorganic compound crystal and a preparation method and application thereof. The chemical formula of the inorganic compound crystal is M y Yb 2x Sc 2(1‑x) Si2O7; 0.001<=x<=0.3. M is selected from at least one of Li, Na, K, Cs, Mg, Ca, Al, Ti, Zr, Hf, Nb or Ta; 0.00001<=y<=0.001. Benefited from Yb 3+ ion 2 F 7 / 2 The crystal has a large multiplet splitting and excellent thermal performance, and the particle thermal population of the lower level of the laser is small, so that a 1-micron wave band laser with high power and low threshold can be obtained.
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