Thermoresistive device structure and method for obtaining a thermal resistance thereof

Abstract

A resistance temperature detector (RTD) device structure and a method for obtaining the RTD resistance of the same are disclosed. The RTD device structure includes: a substrate; a plurality of gate structures located on the substrate; a plurality of electrical connection structures located on the substrate, each electrical connection structure being situated between two adjacent gate structures, and each electrical connection structure having its two ends electrically connected to the two adjacent gate structures respectively; a plurality of gate connection structures electrically connected to at least one end of at least some of the gate structures; and a voltage connection structure electrically connected to one end of some of the gate structures. For multi-gate field-effect transistors, the RTD device structure and the method for obtaining the RTD resistance of the transistor improve the accuracy of the RTD measurement.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and specifically to a thermal resistance device structure and a method for obtaining thermal resistance. Background Technology

[0002] With the development of semiconductor technology, the size of semiconductor devices continues to shrink. As a result, the size of field-effect transistors (FETs) is also shrinking, and the integration density of FETs is becoming higher and higher.

[0003] However, highly integrated field-effect transistors (FETs) have poor thermal conductivity and significant structural limitations, leading to a severe self-heating effect (SHE) that negatively impacts device performance. Therefore, accurate characterization of the self-heating effect in FET devices is crucial for obtaining accurate performance data.

[0004] Thermal resistance is an important parameter characterizing the temperature change of a device under different operating power. To ensure accuracy and convenience of measurement, the gate structure of a field-effect transistor (FET) is often used as the measurement object. However, in the current technology, the accuracy of measuring the thermal resistance of a multi-gate FET through the gate structure still needs to be improved. Summary of the Invention

[0005] The technical problem solved by this invention is to provide a thermal resistance device structure and a method for obtaining thermal resistance, which improves the accuracy of thermal resistance measurement for multi-gate field-effect transistors.

[0006] To solve the above-mentioned technical problems, the present invention provides a thermal resistor device structure, comprising: a substrate, the substrate including an active region; a plurality of gate structures located on the active region; a plurality of electrical connection structures located on the substrate, each electrical connection structure being located between two adjacent gate structures, and each electrical connection structure having its two ends electrically connected to two adjacent gate structures respectively; a plurality of gate connection structures electrically connected to at least one end of at least some of the gate structures; and a voltage connection structure electrically connected to one end of some of the gate structures.

[0007] Optionally, the connection between the gate structures can be in series.

[0008] Optionally, the connection between the gate structures can be in parallel connection.

[0009] Optionally, the gate structure includes interdigitated gates, and the gate structure is arranged in an array.

[0010] Optionally, the gate connection structure is used to acquire voltage; the voltage connection structure is used to apply voltage.

[0011] Optionally, the gate structure includes a starting gate, an ending gate, and several intermediate gates arranged in parallel; the two ends of each intermediate gate are electrically connected to one end of two adjacent electrical connection structures, one end of the starting gate is electrically connected to the electrical connection structure, and one end of the ending gate is connected to the electrical connection structure.

[0012] Optionally, each of the gate structures is parallel to the others; each of the electrical connection structures is parallel to the others; and each of the gate structures is perpendicular to the electrical connection structures.

[0013] Optionally, one end of each intermediate gate and the starting gate is electrically connected to the gate connection structure; both ends of the ending gate are electrically connected to the gate connection structure.

[0014] Optionally, the starting gate has a first end and a second end opposite to each other, and the ending gate has a third end and a fourth end opposite to each other; the first end of the starting gate and the fourth end of the ending gate are respectively electrically connected to a voltage connection structure, and the second end of the starting gate and the third end of the ending gate are respectively electrically connected to adjacent electrical connection structures.

[0015] Optionally, it may also include: a transistor structure, the transistor structure including a plurality of gate structures located on the substrate.

[0016] Accordingly, the technical solution of the present invention provides a method for obtaining the thermal resistance of a thermal resistance device structure, comprising: providing a thermal resistance device structure, the thermal resistance device structure comprising: a substrate, the substrate comprising an active region; a transistor structure, the transistor structure comprising a plurality of gate structures located on the active region; a plurality of electrical connection structures located on the substrate, each electrical connection structure being located between two adjacent gate structures, and each electrical connection structure having its two ends electrically connected to two adjacent gate structures respectively; a plurality of gate connection structures electrically connected to one end of at least some of the gate structures; a voltage connection structure electrically connected to one end of some of the gate structures; performing a plurality of temperature increases on the transistor structure to reach a plurality of test temperatures, applying a first voltage to the gate structure through the voltage connection structure, and obtaining a first unit resistance value of the gate structure corresponding to each test temperature; obtaining the temperature resistivity coefficient of the gate structure based on each first unit resistance value and each test temperature; placing the transistor structure at a plurality of operating power, and obtaining a second unit resistance value of the gate structure corresponding to each operating power; obtaining the operating temperature increment of the gate structure at each operating power based on each second unit resistance value and the temperature resistivity coefficient; and obtaining the thermal resistance value of the transistor based on each operating power and each operating temperature increment of the gate structure.

[0017] Optionally, obtain the first unit resistance value R. g1 The methods include: performing several resistance tests to obtain several equivalent resistance values ​​R.total And the corresponding test spacing S, each resistance test measures the resistance between two gate connection structures in a plurality of gate connection structures, wherein the test spacing S is the spacing between the two gate connection structures; for each equivalent resistance value R total The first unit resistance value R is obtained by fitting the test intervals S. g1 .

[0018] Optionally, for each equivalent resistance value R total The method for fitting each test interval S includes: using the first unit resistance fitting model, and fitting each equivalent resistance value R... total The first unit resistance value R is obtained by fitting the test intervals S. g1 .

[0019] Optionally, the first unit fitting model is: R total =S*(N*R g1 +R m )+N*R g1 N is the number of electrical connection structure spacing steps, R m This represents the equivalent resistance value of the electrical connection structure.

[0020] Optionally, the gate structure includes a starting gate, an ending gate, and a plurality of intermediate gates arranged in parallel, wherein the starting gate has a first end and a second end opposite to each other, and the ending gate has a third end and a fourth end opposite to each other. The first end of the starting gate and the fourth end of the ending gate are respectively electrically connected to a voltage connection structure; obtain any equivalent resistance value R. total The method includes: obtaining a first gate connection structure and a second gate connection structure from a plurality of gate connection structures, wherein the first gate connection structure is a gate connection structure on one of the third ends of a start gate, an intermediate gate, or an end gate, and the second gate connection structure is a gate connection structure on the fourth end of the end gate; performing a resistance test between the first gate connection structure and the second gate connection structure to obtain the equivalent resistance value R. total .

[0021] Optionally, the method for obtaining the test spacing S includes: obtaining the position NF of the first gate connection structure. x The second gate connection structure is located at position FF; the first gate connection structure is located at position NF based on the test results. x The test spacing S = FF - NF is obtained by determining the position of the second gate connection structure FF. x .

[0022] Optionally, obtain the equivalent resistance value R. total The method includes: measuring the voltage V at the first test position through the first gate connection structure. sense1The voltage V at the second test position is measured through the second gate connection structure. sense2 ; Obtain the test current I of the transistor structure force According to the voltage V at the first test location sense1 Voltage V at the second test location sense2 and test current I force Obtain the equivalent resistance value R total =|V sense1 -V sense2 | / I force .

[0023] Optionally, for each equivalent resistance value R total The method for fitting each test interval S includes: using the first unit resistance fitting model, and fitting each equivalent resistance value R... total The first unit resistance value R is obtained by fitting the test intervals S. g1 .

[0024] Optionally, the first unit fitting model is: R total =(FF–NF) x )*(N*R g1 +R m )+N*R g1 N is the number of electrical connection structure spacing steps, R m This represents the equivalent resistance value of the electrical connection structure.

[0025] Optionally, the number of the thermal resistance device structures is greater than 1, and each thermal resistance device structure includes an electrical connection structure with a different electrical connection structure spacing step N.

[0026] Optionally, obtain the first unit resistance value R. g1 The method includes: performing resistance tests on each thermal resistance device structure with different electrical connection spacing steps N to obtain several corresponding equivalent resistance values ​​R. total And the corresponding test spacing S, each resistance test measures the resistance between two gate connection structures in a plurality of gate connection structures, the test spacing S being the spacing between the two gate connection structures; for each equivalent resistance value R total The first unit resistance value R is obtained by fitting the step number N of the spacing between each electrical connection structure. g1 .

[0027] Optionally, the test interval S is the same in each resistance test.

[0028] Optionally, for each equivalent resistance value R total The method for fitting the spacing N of each electrical connection structure includes: using a first unit resistance fitting model to fit each equivalent resistance value R. totalThe first unit resistance value R is obtained by fitting the step number N of the spacing between each electrical connection structure. g1 .

[0029] Optionally, the first unit resistance fitting model is: R total =S*(N*R g1 +R m ), R m This represents the equivalent resistance value of the electrical connection structure.

[0030] Optionally, the electrical connection structure spacing step number N is the ratio of the electrical connection structure spacing X to the electrical connection structure spacing step size M1.

[0031] Optionally, the gate structure includes a starting gate, a terminal gate, and a plurality of intermediate gates arranged in parallel, wherein the terminal gate has a third terminal and a fourth terminal opposite to each other, the fourth terminal being electrically connected to a voltage connection structure, and the third terminal being connected to an adjacent electrical connection structure; any equivalent resistance value R is obtained. total The method includes: obtaining a first gate connection structure and a second gate connection structure from a plurality of gate connection structures, wherein the first gate connection structure and the second gate connection structure are gate connection structures on any two gate structures in each gate structure, and the fourth end of the terminal gate is not electrically connected to either the first gate connection structure or the second gate connection structure; performing a resistance test between the first gate connection structure and the second gate connection structure to obtain the equivalent resistance value R. total .

[0032] Optionally, the method for obtaining the test spacing S includes: obtaining the position NF of the first gate connection structure. x1 The second gate connection structure position NF x2 According to the position NF of the first gate connection structure x1 The second gate connection structure position NF x2 Obtain the test interval S = NF x1 -NF x2 .

[0033] Optionally, for each equivalent resistance value R total The method for fitting the spacing N of each electrical connection structure includes: using a first unit resistance fitting model to fit each equivalent resistance value R. total The first unit resistance value R is obtained by fitting the step number N of the spacing between each electrical connection structure. g1 .

[0034] Optionally, the first unit fitting model is: R total =(NF x1 –NF x2 )*(N*R g1+R m ), R m This represents the equivalent resistance value of the electrical connection structure.

[0035] Optionally, the method for obtaining the temperature resistivity TCR of the gate structure includes: obtaining a room temperature T0, applying a first voltage to the gate structure through the voltage connection structure, and obtaining an initial first unit resistance value R0 of the gate structure corresponding to the room temperature T0; and determining the initial first unit resistance value R0 based on each first unit resistance value R0. g1 And obtain the change in each unit resistance value ΔR from the initial first unit resistance value R0. g1 =R g1 -R0; based on each test temperature T test And room temperature T0, obtain the change in temperature for each test ΔT=T test -T0; Using a temperature resistivity fitting model, the change in resistance value ΔR of each first unit is calculated. g1 The temperature resistance coefficient TCR is obtained by fitting the temperature change ΔT of each test.

[0036] Optionally, the temperature resistivity fitting model is: ΔR g1 =TCR*△T.

[0037] Optionally, the second unit resistance value R g2 The methods for obtaining the equivalent resistance value R include: performing several resistance tests to obtain several equivalent resistance values ​​R. total And the corresponding test spacing S, each resistance test measures the resistance between two gate connection structures in a plurality of gate connection structures, wherein the test spacing S is the spacing between the two gate connection structures; for each equivalent resistance value R total The second unit resistance value R is obtained by fitting the test intervals S. g2 .

[0038] Optionally, the number of the thermal resistance device structures is greater than 1, and each thermal resistance device structure includes an electrical connection structure with a different electrical connection structure spacing step N.

[0039] Optionally, obtain the second unit resistance value R. g2 The method includes: performing resistance tests on each thermal resistance device structure with different electrical connection spacing steps N to obtain several corresponding equivalent resistance values ​​R. total And the corresponding test spacing S, each resistance test measures the resistance between two gate connection structures in a plurality of gate connection structures, the test spacing S being the spacing between the two gate connection structures; for each equivalent resistance value R total The second unit resistance value R is obtained by fitting the number of steps N between each electrical connection structure. g2 .

[0040] Optionally, obtain the operating temperature increment T of the gate structure. rise The method includes: obtaining the initial unit resistance value R of the gate structure. g0 The initial unit resistance value R g0 This is the unit resistance value of the gate structure in the transistor's non-conducting state; based on the initial unit resistance value R... g0 The second unit resistance value R g2 And the temperature resistivity TCR, to obtain the operating temperature increment T rise =(R g2 -R g0 ) / TCR.

[0041] Optional, thermal resistance value R th The methods for obtaining the values ​​include: using a resistance temperature matching model to obtain the values ​​for each operating power P and each operating temperature increment T. rise The thermal resistance value R is obtained by performing a fitting process. th .

[0042] Optionally, the thermal resistance fitting model is T rise =R th *P.

[0043] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects:

[0044] In the thermal resistance device structure provided by the technical solution of the present invention, each electrical connection structure is located between two adjacent gate structures, and both ends of each electrical connection structure are electrically connected to the two adjacent gate structures respectively. In addition, at least one end of at least some gate structures is connected to the gate connection structure, which is beneficial to the subsequent testing process, by measuring the resistance value or unit resistance value of the gate structure and the electrical connection structure respectively through each gate connection structure, separating the influence of the electrical connection structure on the gate structure, thereby improving the measurement accuracy of the thermal resistance value of multi-gate transistors.

[0045] The method for obtaining the resistance temperature of a transistor using a thermal resistance device structure provided by the present invention, by utilizing the aforementioned thermal resistance device structure, allows for the separation of the resistance values ​​of the gate structure and the electrical connection structure when using various gate connection structures. This enables the precise acquisition of an independent first unit resistance value for the gate structure, thereby obtaining a more accurate temperature resistivity coefficient. Consequently, the operating temperature increment of the gate structure can be accurately obtained under different operating power conditions, ultimately improving the measurement accuracy of the transistor's thermal resistance value. The thermal resistance value of the transistor measured using this thermal resistance device structure method is unaffected by the electrical connection structure, thus significantly improving accuracy. Attached Figure Description

[0046] Figure 1 and Figure 2This is a top view of the structure of the resistance temperature detector (RTD) device according to an embodiment of the present invention;

[0047] Figure 3 This is a flowchart illustrating the method for obtaining the thermal resistance of the thermal resistance device structure in this embodiment;

[0048] Figure 4 for Figure 1 A schematic diagram of the structure of a resistance temperature detector (RTD) device during the RTD acquisition process. Detailed Implementation

[0049] As described in the background section, current technology often uses the gate structure of a field-effect transistor (FET) as the measurement object to measure the FET's thermal resistance (TRT) value. For multi-gate FETs, the gate structures and electrical interconnects are typically connected in parallel. Therefore, obtaining the independent resistance values ​​of each gate structure and each electrical interconnect is difficult; usually, only the parallel equivalent resistance value of each gate structure and each electrical interconnect can be obtained. Consequently, the equivalent TRT value obtained from the parallel equivalent resistance value differs from the transistor's own TRT value, resulting in low accuracy in measuring the transistor's TRT value.

[0050] To address the aforementioned technical problems, the present invention provides a resistance temperature detector (RTD) device structure, comprising a plurality of gate structures located on an active region; a plurality of electrical connection structures located on a substrate, each electrical connection structure having its two ends electrically connected to two adjacent gate structures; and a plurality of gate connection structures electrically connected to at least one end of at least some of the gate structures. Because the electrical connection structures and gate structures are arranged as described above, in subsequent testing, the RTD device structure can be used to measure the unit resistance value or resistance value of each gate structure and electrical connection structure, thereby improving the measurement accuracy of the RTD value of multi-gate transistors.

[0051] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0052] Figure 1 and Figure 2 This is a top view of the structure of the resistance temperature detector (RTD) device according to an embodiment of the present invention.

[0053] Please refer to Figure 1 , Figure 1The view direction is perpendicular to the substrate surface. The structure of the thermal resistor device includes: a substrate (not shown); a transistor structure (not shown), the transistor structure including a plurality of gate structures 101 connected in series on the substrate; a plurality of electrical connection structures 102 on the substrate, each electrical connection structure 102 being located between two adjacent gate structures 101, and each electrical connection structure 102 having its two ends electrically connected to the two adjacent gate structures 101 respectively; a plurality of gate connection structures 111 electrically connected to at least one end of at least some of the gate structures 101; and a voltage connection structure 112 electrically connected to one end of some of the gate structures 101.

[0054] In other embodiments, the gate structures may also be connected in parallel.

[0055] In this embodiment, the substrate includes an active region 100, and the transistor structure is located on the active region 100.

[0056] In this embodiment, each of the gate structures 101 is parallel to each other; each of the electrical connection structures 102 is parallel to each other; and each of the gate structures 101 is perpendicular to each of the electrical connection structures 102.

[0057] In this embodiment, each electrical connection structure 102 forms a plurality of parallel first electrical connection layers (not shown), and each gate structure 101 is located between two first electrical connection layers. An isolation and cut-off structure 120 is provided between two adjacent electrical connection structures 102, separating each electrical connection structure 102 from each other. Since each electrical connection structure 102 and each isolation and cut-off structure 120 are arranged at intervals, and both ends of each electrical connection structure 102 are electrically connected to two adjacent gate structures 101, the gate structures 101 are thus connected in series.

[0058] Specifically, each gate structure 101 and each electrical connection structure 102 are electrically connected through a first plug 131.

[0059] In this embodiment, the gate structure 101 includes a starting gate 101a, a terminal gate 101c arranged in parallel, and a plurality of intermediate gates 101b located between the starting gate 101a and the terminal gate 101c; both ends of each intermediate gate 101b are electrically connected to one end of two adjacent electrical connection structures 102, one end of the starting gate 101a is electrically connected to the electrical connection structure 102, and one end of the terminal gate 101c is connected to the electrical connection structure 102.

[0060] In this embodiment, one end of each intermediate gate 101b and the starting gate 101a is electrically connected to the gate connection structure 111; both ends of the ending gate 101c are electrically connected to the gate connection structure 111.

[0061] In the subsequent resistance temperature test of the resistance temperature device structure, the gate connection structure 111 is used to obtain the voltage.

[0062] In this embodiment, the thermal resistor device structure further includes a third electrical connection layer 105 parallel to the first electrical connection layer composed of each electrical connection structure 102, and the third electrical connection layer 105 is located on both sides of the first electrical connection layer.

[0063] Specifically, the connection between the gate connection structure 111 and the gate structure 101 includes the following: the gate connection structure 111 is electrically connected to the third electrical connection layer 105 through the second plug 132, and the third electrical connection layer 105 is electrically connected to the gate structure 101 through the first plug 131, thereby realizing the electrical connection between the gate connection structure 111 and the gate structure 101. Therefore, the gate connection structure 111, which is electrically connected to each gate structure 101, is used to obtain the voltage on the corresponding gate structure 101.

[0064] In this embodiment, one end of a portion of the gate structure 101 is electrically connected to the voltage connection structure 112. The voltage connection structure 112 is used to apply voltage during subsequent resistance testing of the resistance temperature detector (RTD) device structure.

[0065] Specifically, in this embodiment, the starting gate 101a has a first end and a second end, and the ending gate 101c has a third end and a fourth end; the first end of the starting gate 101a and the fourth end of the ending gate 101c are electrically connected to the voltage connection structure 112, and the second end of the starting gate 101a and the third end of the ending gate 101c are electrically connected to the adjacent electrical connection structure 102.

[0066] Specifically, the first end of the starting gate 101a and the fourth end of the ending gate 101c are electrically connected to the voltage connection structure 112 through the second plug 132.

[0067] In this embodiment, the projection patterns of the first plug 131 and the second plug 132 on the substrate surface are close to the region of the active region 100, thereby enabling more accurate measurement of the resistance change of the gate structure 101 in subsequent tests, and thus accurately obtaining the thermal resistance value of the transistor.

[0068] In this embodiment, the gate structure 101 includes interdigitated gates, and the gate structures 101 are arranged in an array.

[0069] It should be noted that the number of gate structures 101, electrical connection structures 102, and gate connection structures 111 included in the RTD device structure of this embodiment is a natural number greater than or equal to 1. For ease of understanding, Figure 1Only a portion of the gate structure 101, electrical connection structure 102, and gate connection structure 111 are shown in the diagram. The remaining gate structures, electrical connection structures, and gate connection structures are identical and are therefore omitted here.

[0070] Please refer to Figure 2 In this embodiment, the transistor structure further includes a source region structure (not shown) and a drain region structure (not shown) located on both sides of the gate structure 101. Correspondingly, the thermal resistor device structure further includes: a source region connection layer 141 connecting the source region structure, a drain region connection layer 142 connecting the drain region structure, and a second electrical connection layer 103 respectively connected to the source region structure and the drain region structure.

[0071] In this embodiment, there is no electrical connection between the second electrical connection layer 103 and the gate structure 101.

[0072] It should be noted that the above Figure 1 and Figure 2 The view orientations are consistent for ease of understanding. Figure 1 The source region connection layer 141 and the drain region connection layer 142 are omitted. Figure 2 The image shows the specific locations of the source region connection layer 141 and the drain region connection layer 142. Figure 1 and Figure 2 The rest of the structure of the resistance temperature detector shown in the image is the same.

[0073] During the operation of a transistor structure, a self-heating effect often occurs, which causes changes in the electrical performance of the transistor structure. In order to accurately and conveniently measure the degree of self-heating of the transistor structure, the gate structure 101 is usually used as the measurement object. By obtaining its resistance change and temperature change, the thermal resistance value of the transistor is obtained, so as to characterize the temperature change of the device under different operating power.

[0074] In this embodiment, since each electrical connection structure 102 is connected in series with each gate structure 101, the unit resistance value or resistance value of each gate structure 101 and the electrical connection structure 102 can be measured by means of each gate connection structure 111 electrically connected to the gate structure 101 during the subsequent resistance temperature measurement process. This separates the influence of the electrical connection structure 102 on the gate structure 101, thereby improving the measurement accuracy of the resistance temperature value of the multi-gate transistor.

[0075] Accordingly, embodiments of the present invention also provide a method for obtaining the resistance temperature (RTD) of a RTD device structure, wherein the RTD is tested using the aforementioned RTD device structure. This RTD method can separately measure the unit resistance or resistance value of the gate structure and the electrical connection structure, thereby separating the influence of the electrical connection structure on the gate structure and improving the measurement accuracy of the RTD value of multi-gate transistors.

[0076] Figure 3 This is a flowchart illustrating the method for obtaining the resistance temperature of the resistance temperature device structure in this embodiment.

[0077] Please refer to Figure 3 The method for obtaining the thermal resistance of the aforementioned thermal resistance device structure includes the following steps:

[0078] Step S100: Provide the structure of the resistance temperature detector (RTD) device;

[0079] Step S110: The transistor structure is heated several times to reach several test temperatures. A first voltage is applied to the gate structure 101 through the voltage connection structure 112, and the first unit resistance value of the gate structure 101 corresponding to each test temperature is obtained respectively.

[0080] Step S120: Obtain the temperature resistivity of the gate structure 101 based on the first unit resistance value and the test temperature.

[0081] Step S130: Set the transistor structure to several operating powers and obtain the second unit resistance value of the gate structure 101 corresponding to each operating power;

[0082] Step S140: Based on the resistance values ​​of each second unit and the temperature resistivity, obtain the operating temperature increment of the gate structure 101 at each operating power.

[0083] Step S150: Obtain the thermal resistance value of the transistor based on the operating power and operating temperature increment of the gate structure 101.

[0084] Figure 4 for Figure 1 A schematic diagram of the structure of a resistance temperature detector (RTD) device during the RTD acquisition process.

[0085] The following combination Figure 3 and Figure 4 The method for obtaining the thermal resistance of the thermal resistance device structure in this embodiment will be described in detail.

[0086] Please combine Figure 4 refer to Figure 3In step S100, a resistance temperature detector (RTD) device structure is provided, the RTD device structure comprising: a substrate, the substrate including an active region 100; a transistor structure, the transistor structure including a plurality of gate structures 101 located on the active region 100, the gate structures 101 being connected in series; a plurality of electrical connection structures 102 located on the substrate, each electrical connection structure 102 being located between two adjacent gate structures 101, and both ends of each electrical connection structure 102 being electrically connected to two adjacent gate structures 101 respectively; a plurality of gate connection structures 111 electrically connected to one end of at least some of the gate structures 101; and a voltage connection structure 112 electrically connected to one end of some of the gate structures 101.

[0087] In this embodiment, the specific structure of the resistance temperature detector (RTD) device is as follows: Figure 1 and Figure 2 As shown, it will not be elaborated further here.

[0088] It should be noted that, for ease of understanding, Figure 4 The source region connection layer and drain region connection layer are omitted in the structure of the resistance temperature detector (RTD) device.

[0089] Please combine Figure 4 refer to Figure 3 In step S110, the transistor structure is heated several times to reach several test temperatures, a first voltage is applied to the gate structure 101 through the voltage connection structure 112, and the first unit resistance value of the gate structure 101 corresponding to each test temperature is obtained.

[0090] In this embodiment, the transistor structure is in a non-operating state during the process of obtaining the first unit resistance value.

[0091] A first voltage is applied to the gate structure 101 through the voltage connection structure 112, thereby measuring the first unit resistance value of the gate structure 101 at each test temperature. The voltage applied at the voltage connection structure 112, which is electrically connected to the first terminal of the starting gate 101a, is denoted as V. force1 V force1 The voltage applied at the voltage connection structure 112, which is electrically connected to the fourth terminal of the terminal gate 101c, is greater than 0 and is denoted as V. force2 The voltage connection structure 112 is grounded, therefore V force2 It equals 0.

[0092] In this embodiment, the first unit resistance value R is obtained. g1 The methods include: performing several resistance tests to obtain several equivalent resistance values ​​R. totalAnd the corresponding test spacing S, each resistance test measures the resistance between two gate connection structures 111 in a plurality of gate connection structures 111, the test spacing S being the spacing between the two gate connection structures 111; for each equivalent resistance value R total The first unit resistance value R is obtained by fitting the test intervals S. g1 .

[0093] In this embodiment, by selecting two gate connection structures 111 at different locations in each resistance test to measure the resistance, the corresponding equivalent resistance value R can be obtained in each resistance test. total And the corresponding test spacing S.

[0094] In this embodiment, for each equivalent resistance value R total The method for fitting each test interval S includes: using the first unit resistance fitting model, and fitting each equivalent resistance value R... total The first unit resistance value R is obtained by fitting the test intervals S. g1 .

[0095] In this embodiment, the first unit fitting model is: R total =S*(N*R g1 +R m )+N*R g1 N is the number of electrical connection structure spacing steps, R m This represents the equivalent resistance value of the electrical connection structure.

[0096] Specifically, the electrical connection structure spacing step number N is the ratio of the electrical connection structure spacing X to the electrical connection structure spacing step size M1.

[0097] In this embodiment, the electrical connection structure spacing X is the distance between two adjacent first electrical connection layers composed of electrical connection structures 102 connected to each gate structure 101.

[0098] In this embodiment, the equivalent resistance value R of the electrical connection structure m It is equal to the sum of the resistance of the electrical connection structure 102 and the resistance of the two adjacent first plugs 131.

[0099] In this embodiment, the corresponding equivalent resistance value R is obtained in each resistance test. total The specific method for the corresponding test spacing S is described below.

[0100] In this embodiment, any equivalent resistance value R is obtained. totalThe method includes: obtaining a first gate connection structure (not shown) and a second gate connection structure (not shown) from a plurality of gate connection structures 111, wherein the first gate connection structure is a gate connection structure 111 on one of the third ends of a start gate 101a, an intermediate gate 101b, or an end gate 101c, and the second gate connection structure is a gate connection structure 111 on the fourth end of the end gate 101c; performing a resistance test between the first gate connection structure and the second gate connection structure to obtain the equivalent resistance value R. total .

[0101] The voltages that can be obtained from each gate connection structure 111 during the test are labeled as V. sense1 V sense2 …V senseFF , where V sense1 It is the voltage obtained by the gate connection structure 111 connected to the first terminal of the starting gate 101a, V senseFF It is the voltage obtained by the gate connection structure 111 connected to the fourth terminal of the terminal gate 101c, V senseNF It is the voltage obtained by the gate connection structure 111 connected to the third terminal of the terminal gate 101c, V sense2 To V sense(NF-1) The voltage obtained for the gate connection structure 111 at the remaining locations.

[0102] In this embodiment, the position of the second gate connection structure is fixed in each resistance test; it is a gate connection structure 111 electrically connected to the fourth terminal of the end gate 101c. The position of the first gate connection structure can be arbitrarily selected from the gate connection structures 111 connected to the third terminal of the starting gate 101a, the intermediate gate 101b, and the end gate 101c.

[0103] In this embodiment, the equivalent resistance value R is obtained. total The method includes: measuring a first test position voltage V1 through a first gate connection structure, and measuring a second test position voltage V2 through a second gate connection structure; obtaining the test current I of the transistor structure. force Based on the voltage V1 at the first test position, the voltage V2 at the second test position, and the test current I... force Obtain the equivalent resistance value R total =|V1-V2| / I force .

[0104] Since the gate structures 101 in the transistor structure are connected in series, the current on each gate structure 101 is equal, I forceMeasurements can be performed at any location within each gate structure 101. Specifically, in this embodiment, the test current I can be obtained at the first end of the starting gate 101a or the fourth end of the ending gate 101c. force .

[0105] In this embodiment, the method for obtaining the test spacing S between the corresponding first gate connection structure and the second gate connection structure in each resistance test includes: obtaining the position NF of the first gate connection structure. x The second gate connection structure is located at position FF; the first gate connection structure is located at position NF based on the test results. x The test spacing S = FF - NF is obtained by determining the position of the second gate connection structure FF. x .

[0106] Specifically, the first gate connection structure is located at NF x The method for obtaining the second gate connection structure position FF includes: numbering each gate structure 101 from the starting gate 101a to the ending gate 101c, and the position of each gate connection structure is the number of the gate structure 101 electrically connected to the gate connection structure 111, thereby obtaining the first gate connection structure position NF. x The second gate connection structure is located at position FF.

[0107] It should be noted that when the first gate connection structure is the gate connection structure 111 on the third end of the end gate 101c, the first gate connection structure and the second gate connection structure are located on the same gate structure 101, that is, at both ends of the end gate 101c. Therefore, the test spacing S is zero at this time.

[0108] Therefore, in this embodiment, the first unit fitting model is: R total =(FF–NF) x )*(N*R g1 +R m )+N*R g1 N is the number of electrical connection structure spacing steps, R m R represents the equivalent resistance value of the electrical connection structure. By employing a first unit resistance fitting model, the equivalent resistance values ​​R are... total The first unit resistance value R is obtained by fitting the test intervals S. g1 .

[0109] In this embodiment, each electrical connection structure 102 is connected in series with each gate structure 101, and at least one end of each gate structure 101 is connected to the gate connection structure 111. Therefore, during the testing process, multiple measurements can be performed using each gate connection structure 111 to obtain multiple sets of equivalent resistance values ​​R. total The test spacing S data was used to obtain the first unit resistance value R through fitting processing.g1 That is, the unit resistance value of the gate structure 101 and the equivalent resistance value R of the electrical connection structure. m This isolates the influence of the electrical connection structure 102 on the gate structure 101 during resistance testing, thereby improving the accuracy of subsequent measurements of the transistor's thermal resistance value.

[0110] In this embodiment, each gate structure 101 is connected to at least one gate connection structure 111. Therefore, the equivalent resistance value R at more locations on each gate structure 101 can be obtained more precisely. total And the test intervals S, thus providing more data for subsequent fitting processing to obtain a more accurate first unit resistance value R. g1 .

[0111] In other embodiments, only a portion of the gate structure is connected to the gate connection structure, which can save on the fabrication cost of the thermal resistance device structure and make the thermal resistance acquisition method simpler.

[0112] In this embodiment, the same resistance temperature detector (RTD) device structure can be used. By selecting two gate connection structures 111 at different locations in each resistance test to measure the resistance, the corresponding equivalent resistance value R can be obtained in each resistance test. total And the corresponding test spacing S, thereby obtaining multiple sets of equivalent resistance values ​​R. total And the test spacing S data, after fitting processing, accurately obtained the first unit resistance value R of each gate structure 101. g1 Therefore, the method for obtaining the resistance of the aforementioned resistance device structure can improve the first unit resistance value R under conditions of low cost and simple operation. g1 The accuracy.

[0113] In another embodiment, the number of provided resistance temperature detector (RTD) device structures is greater than 1, and each RTD device structure includes electrical connection structures with different electrical connection structure spacing steps N. Except for the electrical connection structure spacing steps N, all other parts of each RTD device structure are the same.

[0114] Specifically, the number of electrical connection structure spacing steps N is the ratio of the electrical connection structure spacing X to the electrical connection structure spacing step size M1. In each RTD structure, the electrical connection structure spacing X is different, while the electrical connection structure spacing step size M1 is a constant value.

[0115] In the embodiment described, the first unit resistance value R is obtained. g1 The method includes: performing resistance tests on each thermal resistance device structure with different electrical connection spacing steps N to obtain several corresponding equivalent resistance values ​​R. totalAnd the corresponding test spacing S, each resistance test measures the resistance between two gate connection structures in a plurality of gate connection structures 111, the test spacing S being the spacing between the two gate connection structures; for each equivalent resistance value R total The first unit resistance value R is obtained by fitting the step number N of the spacing between each electrical connection structure. g1 .

[0116] In the embodiment described, the test interval S is the same in each resistance test. Specifically, each resistance test is performed in two gate connection structures 111 at the same position in different thermistor device structures.

[0117] In the embodiment described, for each equivalent resistance value R total The method for fitting the spacing N of each electrical connection structure includes: using a first unit resistance fitting model to fit each equivalent resistance value R. total The first unit resistance value R is obtained by fitting the step number N of the spacing between each electrical connection structure. g1 The first unit resistance fitting model is: R total =S*(N*R g1 +R m ), R m This represents the equivalent resistance value of the electrical connection structure.

[0118] In the embodiment described, any equivalent resistance value R is obtained. total The method includes: obtaining a first gate connection structure and a second gate connection structure from a plurality of gate connection structures, wherein the first gate connection structure and the second gate connection structure are gate connection structures on any two gate structures in each gate structure, and the fourth end of the terminal gate is not electrically connected to either the first gate connection structure or the second gate connection structure; performing a resistance test between the first gate connection structure and the second gate connection structure to obtain the equivalent resistance value R. total .

[0119] In the embodiment described above, the method for obtaining the test spacing S includes: obtaining the position NF of the first gate connection structure. x1 The second gate connection structure position NF x2 According to the position NF of the first gate connection structure x1 The second gate connection structure position NF x2 Obtain the test interval S = NF x1 -NF x2 .

[0120] In the embodiment described, for each equivalent resistance value R total The method for fitting the spacing N of each electrical connection structure includes: using a first unit resistance fitting model to fit each equivalent resistance value R.total The first unit resistance value R is obtained by fitting the step number N of the spacing between each electrical connection structure. g1 .

[0121] Specifically, the first unit fitting model is: R total =(NF x1 –NF x2 )*(N*R g1 +R m ), R m This represents the equivalent resistance value of the electrical connection structure.

[0122] Please combine Figure 4 refer to Figure 3 In step S120, the temperature resistivity of the gate structure 101 is obtained based on the first unit resistance value and the test temperature.

[0123] Since the first unit resistance value of the gate structure 101 corresponding to each test temperature is obtained in step S110 at different test temperatures, the temperature resistivity of the gate structure 101 can be obtained based on multiple sets of first unit resistance values ​​and corresponding test temperature data.

[0124] In this embodiment, the method for obtaining the temperature resistivity (TCR) of the gate structure 101 includes: obtaining a room temperature (T0), applying a first voltage to the gate structure through the voltage connection structure, and obtaining an initial first unit resistance value (R0) of the gate structure corresponding to the room temperature (T0); and determining the initial first unit resistance value (R0) based on each first unit resistance value (R0). g1 And obtain the change in each unit resistance value ΔR from the initial first unit resistance value R0. g1 =R g1 -R0; based on each test temperature T test And room temperature T0, obtain the change in temperature for each test ΔT=T test -T0; Using a temperature resistivity fitting model, the change in resistance value ΔR of each first unit is calculated. g1 The temperature resistance coefficient TCR is obtained by fitting the temperature change ΔT of each test.

[0125] Specifically, the temperature resistivity fitting model is: ΔR g1 =TCR*△T.

[0126] Please combine Figure 4 refer to Figure 3 In step S130, the transistor structure is set to several operating powers, and the second unit resistance value of the gate structure 101 corresponding to each operating power is obtained.

[0127] In this embodiment, the second unit resistance value is obtained when the transistor structure is in operation. When the transistor structure is in operation, each source region is grounded, and a second voltage is applied to each drain region. This second voltage is greater than 0. Simultaneously, a third voltage is applied at the voltage connection structure 112 electrically connected to the first terminal of the starting gate 101a, and a fourth voltage is applied at the voltage connection structure 112 electrically connected to the fourth terminal of the ending gate 101c. Both the third and fourth voltages are greater than 0, and the third and fourth voltages are different, thereby enabling the transistor structure to enter the operating state. During testing, the operating power of the transistor structure is changed by altering the second, third, or fourth voltage.

[0128] In this embodiment, the test process for obtaining the second unit resistance value of the gate structure 101 corresponding to each operating power is carried out at the same room temperature.

[0129] In this embodiment, the second unit resistance value R g2 The methods for obtaining the equivalent resistance value R include: performing several resistance tests to obtain several equivalent resistance values ​​R. total And the corresponding test spacing S, each resistance test measures the resistance between two gate connection structures 111 in a plurality of gate connection structures 111, the test spacing S being the spacing between the two gate connection structures 111; for each equivalent resistance value R total The second unit resistance value R is obtained by fitting the test intervals S. g2 .

[0130] In another embodiment, the number of the provided resistance temperature detector (RTD) device structures is greater than 1, and each RTD device structure includes an electrical connection structure 102 with a different electrical connection structure spacing step N.

[0131] Specifically, obtain the second unit resistance value R. g2 The method includes: performing resistance tests on each thermal resistance device structure with different electrical connection spacing steps N to obtain several corresponding equivalent resistance values ​​R. total And the corresponding test spacing S, each resistance test measures the resistance between two gate connection structures 111 in a plurality of gate connection structures 111, the test spacing S being the spacing between the two gate connection structures 111; for each equivalent resistance value R total The second unit resistance value R is obtained by fitting the number of steps N between each electrical connection structure. g2 .

[0132] The second unit resistance value R g2 The detailed method and steps for obtaining the first unit resistance value R in S110 g1 The method for obtaining it is the same, and will not be described again here.

[0133] Please combine Figure 4 refer to Figure 3 In step S140, the operating temperature increment of the gate structure 101 at each operating power is obtained based on the second unit resistance value and the temperature resistivity.

[0134] Since in step S130, the second unit resistance value of the gate structure 101 corresponding to each operating power is obtained when the transistor structure is at different operating power, the operating temperature increment of the gate structure 101 under each operating power can be obtained according to each second unit resistance value and the temperature resistance coefficient.

[0135] Specifically, the operating temperature increment T of the gate structure 101 is obtained. rise The method includes: obtaining the initial unit resistance value R of the gate structure 101. g0 The initial unit resistance value R g0 This is the unit resistance value of the gate structure 101 in the non-conducting state of the transistor; based on the initial unit resistance value R... g0 The second unit resistance value R g2 And the temperature resistivity TCR, to obtain the operating temperature increment T rise =(R g2 -R g0 ) / TCR.

[0136] Please combine Figure 4 refer to Figure 3 In step S150, the thermal resistance value of the transistor is obtained based on the operating power and operating temperature increment of the gate structure 101.

[0137] In this embodiment, the thermal resistance value R th The methods for obtaining the values ​​include: using a resistance temperature matching model to obtain the values ​​for each operating power P and each operating temperature increment T. rise The thermal resistance value R is obtained by performing a fitting process. th .

[0138] Specifically, the thermal resistance fitting model is T rise =R th *P.

[0139] In summary, in the thermal resistance acquisition method of this embodiment, by performing multiple measurements using the gate connection structures 111 on each gate structure 101, the equivalent resistance value R can be obtained. totalBy separating the resistance values ​​of the gate structure 101 and the electrical connection structure 102, an independent first unit resistance value of the gate structure 101 can be accurately obtained, leading to a more accurate temperature resistivity coefficient. This allows for precise acquisition of the operating temperature increment of the gate structure 101 under different operating power conditions, ultimately improving the measurement accuracy of the transistor's thermal resistance value. The thermal resistance value of the transistor measured using this thermal resistance device structure is unaffected by the electrical connection structure 102, thus significantly improving accuracy.

[0140] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method for obtaining the thermal resistance of a thermal resistance device structure, characterized in that, include: A resistance temperature detector (RTD) device structure is provided, the RTD device structure comprising: a substrate, the substrate including an active region; a transistor structure including a plurality of gate structures located on the active region; a plurality of electrical connection structures located on the substrate, each electrical connection structure being located between two adjacent gate structures, and each electrical connection structure having its two ends electrically connected to two adjacent gate structures respectively; a plurality of gate connection structures electrically connected to one end of at least some of the gate structures; and a voltage connection structure electrically connected to one end of some of the gate structures. The transistor structure is heated several times to reach several test temperatures. A first voltage is applied to the gate structure through the voltage connection structure, and the first unit resistance value of the gate structure corresponding to each test temperature is obtained respectively. The temperature resistivity of the gate structure is obtained based on the resistance values ​​of each first unit and each test temperature. The transistor structure is subjected to several operating powers, and the second unit resistance value of the gate structure corresponding to each operating power is obtained. Based on the resistance values ​​of each second unit and the temperature resistivity, the operating temperature increment of the gate structure at each operating power is obtained. The thermal resistance value of the transistor is obtained based on the operating power and operating temperature increment of the gate structure. Obtain the first unit resistance value R g1 The methods include: performing several resistance tests to obtain several equivalent resistance values ​​R. total And the corresponding test spacing S, each resistance test measures the resistance between two gate connection structures in a plurality of gate connection structures, wherein the test spacing S is the spacing between the two gate connection structures; for each equivalent resistance value R total The first unit resistance value R is obtained by fitting the test intervals S. g1 ; Obtain the equivalent resistance value R total The method includes: measuring the voltage V at the first test position through the first gate connection structure. sense1 The voltage V at the second test position is measured through the second gate connection structure. sense2 ; Obtain the test current I of the transistor structure force According to the voltage V at the first test location sense1 Voltage V at the second test location sense2 and test current I force Obtain the equivalent resistance value R total =| V sense1 -V sense2 | / I force .

2. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 1, characterized in that, For each equivalent resistance value R total The method for fitting each test interval S includes: using the first unit resistance fitting model, and fitting each equivalent resistance value R... total The first unit resistance value R is obtained by fitting the test intervals S. g1 The first unit resistance fitting model is: R total =S*(N*R g1 +R m )+N*R g1 N is the number of electrical connection structure spacing steps, R m This represents the equivalent resistance value of the electrical connection structure.

3. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 2, characterized in that, The gate structure includes a starting gate, an ending gate, and a plurality of intermediate gates arranged in parallel, the starting gate and the ending gate, the starting gate having a first end and a second end opposite to each other, and the ending gate having a third end and a fourth end opposite to each other. The first end of the starting gate and the fourth end of the ending gate are respectively electrically connected to a voltage connection structure; obtain any equivalent resistance value R. total The method includes: obtaining a first gate connection structure and a second gate connection structure from a plurality of gate connection structures, wherein the first gate connection structure is a gate connection structure on one of the third ends of a start gate, an intermediate gate, or an end gate, and the second gate connection structure is a gate connection structure on the fourth end of the end gate; performing a resistance test between the first gate connection structure and the second gate connection structure to obtain the equivalent resistance value R. tota .

4. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 3, characterized in that, The method for obtaining the test spacing S includes: obtaining the position NF of the first gate connection structure. x The second gate connection structure is located at position FF; the first gate connection structure is located at position NF based on the test results. x The test spacing S = FF - NF is obtained by determining the position of the second gate connection structure FF. x .

5. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 4, characterized in that, For each equivalent resistance value R total The method for fitting each test interval S includes: using the first unit resistance fitting model, and fitting each equivalent resistance value R... total The first unit resistance value R is obtained by fitting the test intervals S. g1 ; The first unit resistance fitting model is: R total =(FF – NF x )*(N*R g1 +R m )+N*R g1 N is the number of electrical connection structure spacing steps, R m This represents the equivalent resistance value of the electrical connection structure.

6. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 1, characterized in that, The number of the thermal resistance device structures is greater than 1, and each thermal resistance device structure includes an electrical connection structure with a different electrical connection structure spacing step N.

7. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 6, characterized in that, Perform several resistance tests to obtain several equivalent resistance values ​​R. total The method for the corresponding test spacing S includes: performing resistance tests on each thermal resistance device structure with different electrical connection structure spacing steps N to obtain several equivalent resistance values ​​R. total And the corresponding test spacing S.

8. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 7, characterized in that, The test interval S is the same in each resistance test.

9. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 7, characterized in that, For each equivalent resistance value R total The method for fitting the spacing N of each electrical connection structure includes: using a first unit resistance fitting model to fit each equivalent resistance value R. total The first unit resistance value R is obtained by fitting the step number N of the spacing between each electrical connection structure. g1 ; The first unit resistance fitting model is: R total =S*(N*R g1 +R m ), R m This represents the equivalent resistance value of the electrical connection structure.

10. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 7, characterized in that, The electrical connection structure spacing step number N is the ratio of the electrical connection structure spacing X to the electrical connection structure spacing step size M1.

11. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 7, characterized in that, The gate structure includes a parallel-arranged start gate, an end gate, and a plurality of intermediate gates located between the start gate and the end gate. The end gate has opposing third and fourth terminals. The fourth terminal is electrically connected to a voltage connection structure, and the third terminal is connected to an adjacent electrical connection structure. Any equivalent resistance value R is obtained. total The method includes: obtaining a first gate connection structure and a second gate connection structure from a plurality of gate connection structures, wherein the first gate connection structure and the second gate connection structure are gate connection structures on any two gate structures in each gate structure, and the fourth end of the terminal gate is not electrically connected to either the first gate connection structure or the second gate connection structure; performing a resistance test between the first gate connection structure and the second gate connection structure to obtain the equivalent resistance value R. total .

12. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 11, characterized in that, The method for obtaining the test spacing S includes: obtaining the position NF of the first gate connection structure. x1 The second gate connection structure position NF x2 According to the position NF of the first gate connection structure x1 The second gate connection structure position NF x2 Obtain the test interval S = NF x1 - NF x2 .

13. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 12, characterized in that, For each equivalent resistance value R total The method for fitting the spacing N of each electrical connection structure includes: using a first unit resistance fitting model to fit each equivalent resistance value R. total The first unit resistance value R is obtained by fitting the step number N of the spacing between each electrical connection structure. g1 ; The first unit resistance fitting model is: R total =(NF x1 – NF x2 )*(N*R g1 +R m ), R m This represents the equivalent resistance value of the electrical connection structure.

14. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 1, characterized in that, The method for obtaining the temperature resistivity (TCR) of the gate structure includes: obtaining a room temperature (T0); applying a first voltage to the gate structure through the voltage connection structure; and obtaining an initial first unit resistance value (R0) of the gate structure corresponding to the room temperature (T0); and based on each first unit resistance value (R0)... g1 And obtain the change in each unit resistance value ΔR from the initial first unit resistance value R0. g1 = R g1 - R0; based on each test temperature T test And room temperature T0, obtain the change in temperature for each test ΔT=T test -T0; Using a temperature resistivity fitting model, the change in resistance value ΔR of each first unit is calculated. g1 The temperature resistance coefficient TCR is obtained by fitting the temperature change ΔT of each test.

15. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 14, characterized in that, The temperature resistivity fitting model is: ΔR g1 = TCR*△T.

16. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 1, characterized in that, The second unit resistance value R g2 The methods for obtaining the equivalent resistance value R include: performing several resistance tests to obtain several equivalent resistance values ​​R. total And the corresponding test spacing S, each resistance test measures the resistance between two gate connection structures in a plurality of gate connection structures, wherein the test spacing S is the spacing between the two gate connection structures; for each equivalent resistance value R total The second unit resistance value R is obtained by fitting the test intervals S. g2 .

17. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 1, characterized in that, The number of the thermal resistance device structures is greater than 1, and each thermal resistance device structure includes an electrical connection structure with a different electrical connection structure spacing step N.

18. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 17, characterized in that, Obtain the second unit resistance value R g2 The method includes: performing resistance tests on each thermal resistance device structure with different electrical connection spacing steps N to obtain several corresponding equivalent resistance values ​​R. total And the corresponding test spacing S, each resistance test measures the resistance between two gate connection structures in a plurality of gate connection structures, the test spacing S being the spacing between the two gate connection structures; for each equivalent resistance value R total The second unit resistance value R is obtained by fitting the number of steps N between each electrical connection structure. g2 .

19. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 1, characterized in that, Obtain the operating temperature increment T of the gate structure rise The method includes: obtaining the initial unit resistance value R of the gate structure. g0 The initial unit resistance value R g0 This is the unit resistance value of the gate structure in the non-conducting state of the transistor; based on the initial unit resistance value R... g0、 Second unit resistance value R g2 And the temperature resistivity TCR, to obtain the operating temperature increment T rise =(R g2 -R g0 ) / TCR.

20. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 1, characterized in that, thermal resistance value R th The methods for obtaining the values ​​include: using a resistance temperature matching model to obtain the values ​​for each operating power P and each operating temperature increment T. rise The thermal resistance value R is obtained by performing a fitting process. th .

21. The method for obtaining the thermal resistance of the thermal resistance device structure as described in claim 20, characterized in that, The thermal resistance fitting model is T rise =R th *P.

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