A display panel

Abstract

The embodiment of the present application discloses a display panel, comprising a plurality of sub-pixels, the sub-pixel comprises an opening area and a light shielding area surrounding the opening area at least partially, the display panel comprises: a substrate, an array composite layer arranged on the substrate, the array composite layer comprises a light-transmitting sub-site in the opening area, the array composite layer comprises at least one through hole, the through hole is located in the opening area at least partially, and the light-transmitting sub-site is adjacent to the through hole; a light-transmitting sub-site filling layer is arranged in the through hole at least partially, and the difference between the reflectivity of the through hole site and the reflectivity of the light-transmitting sub-site is less than or equal to 0.5%. In the present application, the difference between the reflectivity of the through hole site and the reflectivity of the light-transmitting sub-site is less than or equal to 0.5%, so that the difference in optical aspects such as reflectivity between the through hole site of the opening area and the non-through hole site of the opening area is reduced, thereby improving the image quality of the display panel.

Description

TECHNICAL FIELD

[0001] The present application relates to the display field, and in particular to a display panel. BACKGROUND

[0002] Various types of display panels have been widely used in display screens of mobile phones, computers, AR (Augmented Reality), VR (Virtual Reality), etc. The existing three-dimensional display mainly achieves the purpose of different content seen by the left and right eyes in a way of sacrificing resolution, which requires higher and higher resolution. The resolution of the display screen of VR (Virtual Reality) and the like is very high, and in order to improve the aperture ratio, the via part needs to be fully utilized to improve the aperture ratio.

[0003] However, there are differences in optical aspects such as reflectivity between the via part of the opening area and the non-via part of the opening area, which reduces the image quality of the display panel. SUMMARY

[0004] The embodiments of the present application provide a display panel, which can solve the problem of differences in optical aspects such as reflectivity between the via part of the opening area and the non-via part of the opening area, which reduces the image quality of the display panel.

[0005] The embodiments of the present application provide a display panel, comprising a plurality of sub-pixels, the sub-pixel comprising an opening area and a light shielding area at least partially surrounding the opening area, the display panel comprising:

[0006] a substrate,

[0007] an array composite layer disposed on the substrate, the array composite layer comprising a light-transmitting sub-part located in the opening area, the array composite layer comprising at least one via, the via being at least partially located in the opening area, the light-transmitting sub-part being adjacent to the via;

[0008] a light-transmitting sub-part filling layer disposed at least in the via, the difference between the reflectivity of the via part and the reflectivity of the light-transmitting sub-part being less than or equal to 0.5%.

[0009] Optionally, in some embodiments of the present application, the light-transmitting sub-part filling layer comprises a first organic layer, and the first organic layer is disposed in the via and the light-transmitting sub-part.

[0010] Optionally, in some embodiments of the present application, the light-transmitting sub-part filling layer comprises a first inorganic layer, and the first inorganic layer is only filled in the via.

[0011] Optionally, in some embodiments of the present application, the array composite layer comprises:

[0012] a first semiconductor layer disposed on the substrate;

[0013] a first gate insulating layer disposed on the first semiconductor layer and part of the substrate;

[0014] a first gate disposed on the first gate insulating layer;

[0015] a first interlayer insulating layer disposed on the first gate and part of the first gate insulating layer;

[0016] a first source metal layer disposed on the first interlayer insulating layer, the first source metal layer comprising a first source electrode;

[0017] a second interlayer insulating layer disposed on the first source metal layer and part of the first interlayer insulating layer;

[0018] a first drain metal layer disposed on the second interlayer insulating layer, the first drain metal layer comprising a first drain electrode;

[0019] a planar layer disposed on the first drain metal layer;

[0020] wherein the through hole penetrates the first gate insulating layer, the first interlayer insulating layer and the second interlayer insulating layer, the first drain metal layer is a transparent conductive layer, and the first drain electrode extends into the through hole to connect the first semiconductor layer.

[0021] Optionally, in some embodiments of the present application, in the thickness direction of the display panel, the light-transmitting sub-area is additionally provided with the first gate insulating layer, the first interlayer insulating layer and the second interlayer insulating layer compared with the through hole area;

[0022] in the thickness direction of the display panel, the through hole area is additionally provided with the first semiconductor layer and the first drain electrode compared with the light-transmitting sub-area.

[0023] Optionally, in some embodiments of the present application, the light-transmitting sub-area filling layer comprises a first organic layer, the light-transmitting sub-area filling layer is the planar layer, and the material of the first organic layer is at least one of polyimide, polymethyl methacrylate and polyethylene terephthalate.

[0024] Optionally, in some embodiments of the present application, the light-transmitting sub-area filling layer comprises a first inorganic layer, the first inorganic layer is filled only in the through hole, and the material of the first inorganic layer comprises at least one of silicon nitride, silicon oxide and niobium pentoxide.

[0025] Optionally, in some embodiments of the present application, the material of the light-transmitting sub-area filling layer comprises a stack of silicon nitride and silicon oxide, the thickness of the silicon nitride is 1500 angstroms to 2000 angstroms, and the thickness of the silicon oxide is 3000 angstroms to 3500 angstroms.

[0026] Optionally, in some embodiments of the present application, the refractive index of the silicon nitride is 1.85 to 1.95, and the refractive index of the silicon oxide is 1.4 to 1.5.

[0027] Optionally, in some embodiments of the present application, the array composite layer further comprises:

[0028] a second semiconductor layer, disposed between the substrate and the first semiconductor layer, the material of the first semiconductor layer being different from the material of the second semiconductor layer;

[0029] a second gate insulating layer, disposed between the second semiconductor layer and the first semiconductor layer;

[0030] a second gate, disposed between the second gate insulating layer and the first semiconductor layer;

[0031] a third interlayer insulating layer, disposed between the second gate and the first semiconductor layer.

[0032] In the embodiments of the present application, a display panel is provided, the display panel comprises a plurality of sub-pixels, each sub-pixel comprises an opening area and a light-shielding area surrounding the opening area at least partially, and the display panel comprises: a substrate, an array composite layer disposed on the substrate, the array composite layer comprising a light-transmitting sub-area located in the opening area, the array composite layer comprising at least one through hole, the through hole being located in the opening area at least partially, and the light-transmitting sub-area being adjacent to the through hole; and a light-transmitting sub-area filling layer disposed in the through hole at least partially, the difference between the reflectivity of the through hole and the reflectivity of the light-transmitting sub-area being less than or equal to 0.5%. In the present application, the through hole is located in the opening area at least partially, so as to improve the aperture ratio of the display panel and improve the transmittance. The display panel comprises the light-transmitting sub-area filling layer, the light-transmitting sub-area filling layer is disposed in the through hole at least partially, so as to make the difference between the reflectivity of the through hole and the reflectivity of the light-transmitting sub-area less than or equal to 0.5%, thereby reducing the difference in optical aspects such as reflectivity between the through hole part of the opening area and the non-through hole part of the opening area, and improving the image quality of the display panel. BRIEF DESCRIPTION OF DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0034] Figure 1 A top view of a partial structure of a sub-pixel of a display panel according to an embodiment of the present application is shown in FIG. 1;

[0035] Figure 2 A first cross-sectional view of a display panel according to an embodiment of the present application is shown in FIG. 2;

[0036] Figure 3 A second cross-sectional view of a display panel according to an embodiment of the present application is shown in FIG. 3;

[0037] Figure 4 A third cross-sectional view of a display panel according to an embodiment of the present application is shown in FIG. 4. DETAILED DESCRIPTION

[0038] The technical solutions in the embodiments of the present application will be clearly and completely described with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, the orientation words such as "upper" and "lower" generally refer to the upper and lower of the device in the actual use or working state, and specifically refer to the direction of the drawing surface in the drawings; and "inner" and "outer" refer to the contour of the device.

[0039] The embodiments of the present application provide a display panel, the display panel comprising a plurality of sub-pixels, each of the sub-pixels comprising an opening region and a light shielding region at least partially surrounding the opening region, the display panel comprising: a substrate; an array composite layer disposed on the substrate, the array composite layer comprising a light-transmitting sub-region located in the opening region, the array composite layer comprising at least one through hole, the through hole being at least partially located in the opening region, the light-transmitting sub-region being adjacent to the through hole; and a light-transmitting sub-region filling layer disposed at least in the through hole, the difference between the reflectivity of the through hole region and the reflectivity of the light-transmitting sub-region being less than or equal to 0.5%. The following will be described in detail. It should be noted that the description order of the following embodiments is not limited as the preferred order of the embodiments.

[0040] Embodiment one

[0041] Please refer to Figure 1 , Figure 2 , Figure 3 and Figure 4 , Figure 1 A top view of a partial structure of a sub-pixel of a display panel according to an embodiment of the present application is shown in FIG. 1; Figure 2 A first cross-sectional view of a display panel according to an embodiment of the present application is shown in FIG. 2; Figure 3A second cross-sectional schematic view of the display panel provided by the embodiment of the present application is shown in FIG. 2B. Figure 4 A third cross-sectional schematic view of the display panel provided by the embodiment of the present application is shown in FIG. 3.

[0042] The display panel 100 provided by the embodiment of the present application includes a plurality of sub-pixels 1001, each of the sub-pixels 1001 including an opening region AR and a light-blocking region BM at least partially surrounding the opening region AR. The display panel 100 includes a substrate 11, an array composite layer, and a light-transmitting sub-region filling layer 30. The array composite layer is disposed on the substrate 11 and includes a light-transmitting sub-region 10011 in the opening region AR. The array composite layer includes at least one through hole 31 at least partially located in the opening region AR, and the light-transmitting sub-region 10011 is adjacent to the through hole 31. The light-transmitting sub-region filling layer 30 is at least disposed in the through hole 31, and the difference between the reflectivity of the through hole 31 and the reflectivity of the light-transmitting sub-region 10011 is less than or equal to 0.5%.

[0043] Specifically, the substrate 11 can be a glass substrate, which is not limited herein.

[0044] Specifically, the display panel 100 includes a plurality of sub-pixels 1001, and the display panel 100 can be a liquid crystal display panel. The plurality of sub-pixels 1001 are arranged in an array on the substrate 11, Figure 1 As shown in FIG. 1, the scanning signal line San1 and the data signal line Data1 surround the plurality of sub-pixels 1001. Each of the sub-pixels 1001 includes an opening region AR and a light-blocking region BM at least partially surrounding the opening region AR. The opening region AR can transmit the light of a backlight to display an image. The light-blocking region BM can be a black matrix (BM) setting region, and the light-blocking region BM can divide the plurality of sub-pixels 1001.

[0045] Specifically, the array composite layer is disposed on the substrate 11. The array composite layer can include a plurality of thin film transistors, a scanning signal line San1, a data signal line Data1, and the like. As can be easily understood, in a liquid crystal display panel, the array composite layer is a plurality of film layers between a liquid crystal layer on a TFT array substrate and the substrate 11.

[0046] Specifically, the array composite layer includes at least one through hole 31 at least partially located in the opening region AR. The through hole 31 is disposed at least partially in the opening region AR to make full use of the position of the through hole 31 to improve the aperture ratio and thus improve the transmittance.

[0047] Specifically, the light-transmitting sub-region filling layer 30 is at least disposed in the through hole 31. The light-transmitting sub-region filling layer 30 is used to eliminate the difference in reflectivity or other optical aspects between the through hole 31 part of the opening region AR and the non-through hole part of the opening region AR.

[0048] In the embodiment, the through hole 31 is at least partially located in the opening region AR to improve the aperture ratio of the display panel 100 and improve the transmittance. The display panel 100 comprises a light-transmitting sub-area filling layer 30, which is arranged at least in the through hole 31, so that the reflectivity of the through hole 31 is less than or equal to 0.5% different from the reflectivity of the light-transmitting sub-area 10011, thereby reducing the difference in reflectivity between the through hole 31 and the non-through hole region of the opening region AR, and improving the image quality of the display panel 100.

[0049] In some embodiments, as shown in Figure 2 The light-transmitting sub-area filling layer 30 comprises a first organic layer, which is arranged in the through hole 31 and the light-transmitting sub-area 10011.

[0050] Specifically, the light-transmitting sub-area filling layer 30 comprises a first organic layer, which is an organic material formed by coating or the like. The first organic layer can be coated in the through hole 31 and the light-transmitting sub-area 10011. The first organic layer flattens the through hole 31, and the thickness of the first organic layer in the through hole 31 is greater than the thickness of the light-transmitting sub-area 10011, so that the reflectivity of the through hole 31 is less than or equal to 0.5% different from the reflectivity of the light-transmitting sub-area 10011.

[0051] In some embodiments, as shown in Figure 3 and Figure 4 The light-transmitting sub-area filling layer 30 comprises a first inorganic layer, which is arranged only in the through hole 31.

[0052] Specifically, the light-transmitting sub-area filling layer 30 comprises a first inorganic layer, which is an inorganic material formed by vapor deposition or the like. The first inorganic layer has a uniform thickness at each position. The first inorganic layer is arranged only in the through hole 31, so that the reflectivity of the through hole 31 is less than or equal to 0.5% different from the reflectivity of the light-transmitting sub-area 10011.

[0053] Embodiment Two

[0054] The display panel 100 of the embodiment is the same as or similar to any one of the display panels 100 of the embodiments one, and the difference is that the embodiment further illustrates a detailed structure of the display panel 100.

[0055] In some embodiments, the array composite layer comprises the first semiconductor layer 16, the first gate insulating layer 17, the first gate electrode 181, the first interlayer insulating layer 19, the first source metal layer 20, the second interlayer insulating layer 21, the first drain metal layer 22, and the planar layer 23; the first semiconductor layer 16 is disposed on the substrate 11; the first gate insulating layer 17 is disposed on the first semiconductor layer 16 and part of the substrate 11; the first gate electrode 181 is disposed on the first gate insulating layer 17; the first interlayer insulating layer 19 is disposed on the first gate electrode 181 and part of the first gate insulating layer 17; the first source metal layer 20 is disposed on the first interlayer insulating layer 19, and the first source metal layer 20 comprises the first source electrode 201; the second interlayer insulating layer 21 is disposed on the first source metal layer 20 and part of the first interlayer insulating layer 19; the first drain metal layer 22 is disposed on the second interlayer insulating layer 21, and the first drain metal layer 22 comprises the first drain electrode 221, which is in conductive connection with the first semiconductor layer 16; and the planar layer 23 is disposed on the first drain metal layer 22; wherein the via hole 31 penetrates the first gate insulating layer 17, the first interlayer insulating layer 19, and the second interlayer insulating layer 21, the first drain metal layer 22 is a transparent conductive layer, and the first drain electrode 221 extends into the via hole 31 to connect the first semiconductor layer 16.

[0056] Specifically, Figure 2 and Figure 3 a cross-sectional structure of a display panel is illustrated, Figure 2 and Figure 3 different setting conditions of the light-transmitting sub-site filling layer 30 are respectively illustrated.

[0057] Specifically, in Figure 2 and Figure 3 , the via hole 31 serves to extend the first drain electrode 221 into the via hole 31 to connect the first semiconductor layer 16, the via hole 31 penetrates the first gate insulating layer 17, the first interlayer insulating layer 19, and the second interlayer insulating layer 21, the via hole 31 penetrates a large number of film layers or a large thickness of film layers, so that the via hole 31 is large, and in the sub-pixel 1001, the via hole 31 occupies a large area, therefore, the via hole 31 needs to be disposed at least partially in the opening region AR to improve the aperture ratio of the sub-pixel 1001.

[0058] Specifically, in order to make the via hole 31 part transmit the light of the backlight, the first drain metal layer 22 is a transparent conductive layer.

[0059] In some embodiments, in the thickness direction of the display panel 100, the light-transmitting sub-area 10011 is provided with the first gate insulating layer 17, the first interlayer insulating layer 19 and the second interlayer insulating layer 21, while the through-hole area 31 is not provided with the first gate insulating layer 17, the first interlayer insulating layer 19 and the second interlayer insulating layer 21; in the thickness direction of the display panel 100, the through-hole area 31 is provided with the first semiconductor layer 16 and the first drain 221, while the light-transmitting sub-area 10011 is not provided with the first semiconductor layer 16 and the first drain 221.

[0060] Specifically, as shown in Figure 2 and Figure 3 , due to the structural arrangement of the display panel, in the thickness direction of the display panel 100, the through-hole area 31 is not provided with the first gate insulating layer 17, the first interlayer insulating layer 19 and the second interlayer insulating layer 21, while the light-transmitting sub-area 10011 is provided with the first gate insulating layer 17, the first interlayer insulating layer 19 and the second interlayer insulating layer 21; in the thickness direction of the display panel 100, the through-hole area 31 is provided with the first semiconductor layer 16 and the first drain 221, while the light-transmitting sub-area 10011 is not provided with the first semiconductor layer 16 and the first drain 221.

[0061] Specifically, the material of the first gate insulating layer 17, the first interlayer insulating layer 19 and the second interlayer insulating layer 21 can be one or both of silicon nitride and silicon oxide.

[0062] Specifically, the material of the first drain metal layer 22 can be indium tin oxide (ITO).

[0063] In some embodiments, as shown in Figure 2 , the light-transmitting sub-area filling layer 30 comprises a first organic layer, the light-transmitting sub-area filling layer 30 is a flat layer, and the material of the first organic layer is at least one of polyimide, polymethyl methacrylate and polyethylene terephthalate.

[0064] Specifically, the light-transmitting sub-area filling layer 30 comprises a first organic layer, the first organic layer is an organic material, the light-transmitting sub-area filling layer 30 is a flat layer, and the light-transmitting sub-area filling layer 30 shares the flat layer 23, which can reduce the manufacturing process of the display panel.

[0065] In some embodiments, as shown in Figure 3 and Figure 4 , the light-transmitting sub-area filling layer 30 comprises a first inorganic layer, the first inorganic layer is filled only in the through-hole 31, and the material of the first inorganic layer comprises at least one of silicon nitride, silicon oxide and niobium pentoxide.

[0066] In some embodiments, the material of the light-transmitting sub-area filling layer 30 comprises a stack of silicon nitride and silicon oxide, the thickness of the silicon nitride is 1500 angstroms to 2000 angstroms, and the thickness of the silicon oxide is 3000 angstroms to 3500 angstroms.

[0067] Specifically, as shown inFigure 4 As shown, Figure 4 The phototransmitter filling layer 30 is illustrated as a stacked structure. The material of the phototransmitter filling layer 30 includes a stack of silicon nitride and silicon oxide. For example, the phototransmitter filling layer 30 is a stack of silicon nitride and silicon oxide, a stack of silicon nitride, silicon oxide, and silicon nitride, or a stack of silicon nitride, silicon oxide, silicon nitride, and silicon oxide. The reduction of reflectivity differences through multiple layers is achieved by adjusting the overall refractive index of the film. Enhancement and destructive effects are achieved by using two media with different refractive indices (such as silicon nitride and silicon oxide) and adjusting the material thickness to adjust the optical path, thereby reducing or enhancing transmitted light. For example, silicon nitride with a thickness of 100–1000 angstroms and silicon oxide with a thickness of 100–1000 angstroms can be used as one unit to block light in the 380 nm–780 nm wavelength band. Then, silicon nitride with a thickness of 100–1000 angstroms and silicon oxide with a thickness of 100–1000 angstroms can be deposited as another unit to block light in the 380 nm–780 nm wavelength band.

[0068] In some embodiments, silicon nitride has a refractive index of 1.85 to 1.95, and silicon oxide has a refractive index of 1.4 to 1.5.

[0069] In some embodiments, the array composite layer further includes a second semiconductor layer, a second gate insulating layer, a second gate, and a third interlayer insulating layer; the second semiconductor layer 12 is disposed between the substrate 11 and the first semiconductor layer 16, and the material of the first semiconductor layer 16 is different from the material of the second semiconductor layer 12; the second gate insulating layer 13 is disposed between the second semiconductor layer 12 and the first semiconductor layer 16; the second gate 142 is disposed between the second gate insulating layer 13 and the first semiconductor layer 16; and the third interlayer insulating layer 15 is disposed between the second gate 142 and the first semiconductor layer 16.

[0070] Specifically, when the display panel 100 is used as a display screen for VR (Virtual Reality) and the like, the LTPO architecture can be used; Figure 2 and Figure 3 The first thin-film transistor 101 can be an oxide semiconductor thin-film transistor, that is, the first semiconductor layer 16 can be an oxide semiconductor material such as IGZO. Figure 2 and Figure 3 The second thin-film transistor 102 can be a thin-film transistor of polycrystalline silicon, that is, the second semiconductor layer 12 can be made of polycrystalline silicon material.

[0071] Specifically, Figure 2 and Figure 3The layer structure of the display panel 100 includes, which are sequentially stacked: a substrate, a second semiconductor layer 12, a second gate insulating layer 13, a second gate metal layer 14, a third interlayer insulating layer 15, a first semiconductor layer 16, a first gate insulating layer 17, a first gate metal layer 18, a first interlayer insulating layer 19, a first source metal layer 20, a second interlayer insulating layer 21, a first drain metal layer 22, a planarization layer 23, a first transparent electrode layer 24, a transparent electrode interlayer insulating layer 25, and a second transparent electrode 26. The second gate metal layer 14 is patterned to form a second gate 142 and a third gate 141; the first gate metal layer 18 is patterned to form a first gate 181, a second source 182, and a second drain 183; the first source metal layer 20 is patterned to form a first source 201; one of the first transparent electrode layer 24 and the second transparent electrode 26 forms a common electrode, and the other forms a pixel electrode.

[0072] It should be noted that the hydrogen content in the material of the light-transmitting sub-area filling layer 30 needs to be small, so as to avoid the influence of the light-transmitting sub-area filling layer 30 on the electrical properties of the first semiconductor layer 16.

[0073] It should be noted that the present application reduces the difference between the reflectivity of the through hole 31 and the reflectivity of the light-transmitting sub-area 10011 from greater than or equal to 3% to less than or equal to 0.5%.

[0074] The above describes in detail a display panel provided by the embodiments of the present application. The principles and implementation manners of the present application are described by applying specific examples. The above description of the embodiments is only used to help understand the method of the present application and its core idea; meanwhile, for those skilled in the art, according to the idea of the present application, the specific implementation manner and application range can be changed; and in summary, the content of the present description should not be understood as a limitation of the present application.

Claims

1. A display panel, characterized by, The display panel comprises a plurality of sub-pixels, each of the sub-pixels comprising an opening region and a light shielding region at least partially surrounding the opening region, and the display panel comprising: a substrate, an array composite layer disposed on the substrate, the array composite layer comprising a light-transmitting sub-region in the opening region, the array composite layer comprising at least one through hole, the through hole being at least partially located in the opening region, the light-transmitting sub-region being adjacent to the through hole; a light-transmitting sub-region filling layer, the light-transmitting sub-region filling layer comprising a first inorganic layer and a planar layer, the first inorganic layer being filled only in the through hole, the planar layer being disposed above the through hole and the light-transmitting sub-region, the planar layer being an organic material, the difference between the reflectivity of the through hole region and the reflectivity of the light-transmitting sub-region being less than or equal to 0.5%.

2. The display panel of claim 1, wherein, The array composite layer comprises: a first semiconductor layer disposed on the substrate; a first gate insulating layer disposed on the first semiconductor layer and part of the substrate; a first gate disposed on the first gate insulating layer; a first interlayer insulating layer disposed on the first gate and part of the first gate insulating layer; a first source metal layer disposed on the first interlayer insulating layer, the first source metal layer comprising a first source electrode; a second interlayer insulating layer disposed on the first source metal layer and part of the first interlayer insulating layer; a first drain metal layer disposed on the second interlayer insulating layer, the first drain metal layer comprising a first drain electrode, the first drain electrode being in conductive connection with the first semiconductor layer; the planar layer is disposed on the first drain metal layer; wherein the through hole penetrates the first gate insulating layer, the first interlayer insulating layer and the second interlayer insulating layer, the first drain metal layer is a transparent conductive layer, and the first drain electrode extends into the through hole to connect the first semiconductor layer.

3. The display panel of claim 2, wherein, In the thickness direction of the display panel, the light-transmitting sub-region is additionally provided with the first gate insulating layer, the first interlayer insulating layer and the second interlayer insulating layer compared with the through hole region; In the thickness direction of the display panel, the through hole region is additionally provided with the first semiconductor layer and the first drain electrode compared with the light-transmitting sub-region.

4. The display panel of claim 3, wherein, The material of the planar layer is at least one of polyimide, polymethyl methacrylate and polyethylene terephthalate.

5. The display panel of claim 3, wherein, The material of the first inorganic layer comprises at least one of silicon nitride, silicon oxide and niobium pentoxide.

6. The display panel of claim 5, wherein, The material of the light-transmitting sub-region filling layer comprises a stack of silicon nitride and silicon oxide, the thickness of the silicon nitride being 1500 angstroms to 2000 angstroms, and the thickness of the silicon oxide being 3000 angstroms to 3500 angstroms.

7. The display panel of claim 6, wherein, The refractive index of the silicon nitride is 1.85 to 1.95, and the refractive index of the silicon oxide is 1.4 to 1.

5.

8. The display panel of claim 2, wherein, The array composite layer further comprises: a second semiconductor layer disposed between the first semiconductor layer and the substrate, the material of the first semiconductor layer being different from the material of the second semiconductor layer; a second gate insulating layer disposed between the second semiconductor layer and the first semiconductor layer; a second gate disposed between the second gate insulating layer and the first semiconductor layer; A third interlayer insulating layer is disposed between the second gate and the first semiconductor layer.

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