Polycrystalline in-situ analysis method, device, apparatus and storage medium

Abstract

This invention relates to the field of polycrystalline material performance analysis technology, and discloses a quasi-in-situ analysis method, apparatus, device, and storage medium for polycrystalline materials. The method includes: acquiring an original morphology image of the nth target crystal and performing a stretching operation until the strain of the target crystal reaches a preset strain or the target crystal fractures. For the nth target crystal, the number of layers of the nth target crystal is obtained; image analysis is performed based on the number of layers, the original morphology image, and the stretching image to obtain the layer-level polycrystalline deformation coordination mechanism of the nth target crystal; and the layer-level polycrystalline deformation coordination mechanism of the nth target crystal is synthesized to obtain the polycrystalline deformation coordination mechanism of the polycrystalline material, thereby enabling reliable and accurate analysis of the polycrystalline material properties.

Description

Technical Field

[0001] This invention relates to the field of polycrystalline materials technology, and specifically to a quasi-in-situ analysis method, apparatus, equipment, and storage medium for polycrystalline materials. Background Technology

[0002] The deformation coordination behavior among numerous grains within polycrystalline materials is extremely complex and often exhibits anomalous phenomena. Accurate understanding of the intrinsic mechanisms underlying strain coordination between grains through dislocation slip, twinning, and other behaviors requires sophisticated in-situ or quasi-in-situ characterization experiments, such as in-situ scanning electron microscopy (in-situ SEM) and in-situ electron backscattering diffraction (in-situ EBSD). However, current observational methods like SEM and EBSD can only characterize the sample surface and cannot observe the deformation behavior of grains below the surface. Three-dimensional EBSD characterization methods require thickness-direction slicing of the deformed sample for further characterization, making in-situ or quasi-in-situ observation of the entire deformation process impossible. This results in limited current understanding of the deformation coordination behavior among polycrystalline materials, and the intrinsic mechanisms of some anomalous behaviors remain difficult to explain accurately. Summary of the Invention

[0003] In view of the above problems, embodiments of the present invention provide a quasi-in-situ analysis method for polycrystalline materials to solve the technical problem that the intrinsic mechanism of deformation coordination between grains in polycrystalline materials cannot be explained in the prior art.

[0004] According to one aspect of the present invention, a quasi-in-situ analysis method for polycrystalline materials is provided, the method comprising:

[0005] Obtain the processing requirements for N polycrystalline materials of different thicknesses, where N is greater than or equal to 2;

[0006] The polycrystalline material is processed according to the processing requirements to obtain N target crystals of different thicknesses;

[0007] The first loop is executed until n is greater than N; the first loop includes:

[0008] Obtain the original morphology image corresponding to the nth target crystal, where n is greater than or equal to 1;

[0009] Obtain the stretched image corresponding to the nth target crystal;

[0010] Obtain the number of layers of the nth target crystal;

[0011] For the nth target crystal, image analysis is performed based on the number of layers of the nth target crystal, the original morphology image of the nth target crystal, and the tensile image of the nth target crystal to obtain the layered polycrystalline deformation coordination mechanism of the nth target crystal, with n increasing by 1;

[0012] The polycrystalline deformation coordination mechanism of the polycrystalline material is obtained based on the hierarchical polycrystalline deformation coordination mechanism of the N target crystals.

[0013] According to another aspect of the present invention, a quasi-in-situ analysis apparatus for polycrystalline materials is provided, the polycrystalline quasi-in-situ analysis apparatus comprising:

[0014] The parameter acquisition module is used to obtain the processing requirements of N polycrystalline materials with different thicknesses, where N is greater than or equal to 2.

[0015] The execution module is used to process the polycrystalline material according to the processing requirements to obtain N target crystals of different thicknesses and to execute the first cycle process until n is greater than N;

[0016] The first loop process is as follows: acquire the original morphology image corresponding to the nth target crystal, where n is greater than or equal to 1; acquire the stretched image corresponding to the nth target crystal; acquire the number of layers of the nth target crystal; for the nth target crystal, perform image analysis based on the number of layers of the nth target crystal, the original morphology image of the nth target crystal, and the stretched image of the nth target crystal to obtain the layered polycrystalline deformation coordination mechanism of the nth target crystal, where n increments by 1;

[0017] The analysis module is used to obtain the polycrystalline deformation coordination mechanism of the polycrystalline material based on the hierarchical polycrystalline deformation coordination mechanism of the N target crystals.

[0018] According to another aspect of the present invention, a quasi-in-situ analysis device for polycrystalline materials is provided, comprising: a processor, a memory, a communication interface, and a communication bus, wherein the processor, the memory, and the communication interface communicate with each other through the communication bus;

[0019] The memory is used to store at least one executable instruction that causes the processor to perform the operation of the polycrystalline quasi-in-situ analysis method as described above.

[0020] According to another aspect of the present invention, a storage medium is provided, wherein at least one executable instruction is stored therein, which, when executed on a polycrystalline quasi-in-situ analysis device / apparatus, causes the polycrystalline quasi-in-situ analysis device / apparatus to perform the operation of the polycrystalline quasi-in-situ analysis method as described above.

[0021] This invention establishes processing requirements for at least two different thicknesses of any polycrystalline material. By analyzing the stretching and deformation parameters of each target crystal, the deformation coordination differences of multiple target crystals can be obtained. By summarizing the hierarchical polycrystalline deformation coordination mechanism of multiple target crystals, the polycrystalline deformation coordination mechanism of the polycrystalline material can be obtained, without the need for observation through direct observation, in-situ surface observation, or three-dimensional slice observation. This clearly explains the intrinsic mechanism of deformation coordination between polycrystalline material grains.

[0022] The above description is merely an overview of the technical solutions of the embodiments of the present invention. In order to better understand the technical means of the embodiments of the present invention and to implement them in accordance with the contents of the specification, and to make the above and other objects, features and advantages of the embodiments of the present invention more apparent and understandable, specific embodiments of the present invention are described below. Attached Figure Description

[0023] The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0024] Figure 1 A schematic flowchart of a first embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention is shown.

[0025] Figure 2 A flowchart illustrating a second embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention is shown.

[0026] Figure 3 A schematic diagram of the structure of a single-layer target crystal obtained through processing in the quasi-in-situ analysis method for polycrystalline materials provided by the present invention is shown.

[0027] Figure 4 A schematic diagram of the structure of the bilayer target crystal obtained through processing in the quasi-in-situ analysis method for polycrystalline materials provided by the present invention is shown.

[0028] Figure 5 A schematic diagram of the structure of the multilayer target crystal obtained through processing in the quasi-in-situ analysis method for polycrystalline materials provided by the present invention is shown.

[0029] Figure 6 A schematic cross-sectional view of the target crystal obtained after processing in the quasi-in-situ analysis method for polycrystalline materials provided by the present invention is shown.

[0030] Figure 7 A schematic diagram of the electropolishing apparatus in the quasi-in-situ analysis method for polycrystalline materials provided by the present invention is shown.

[0031] Figure 8The diagram illustrates multiple processes obtained in one embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention.

[0032] Figure 8 -(a) shows a schematic diagram of the original morphology image of the first section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0033] Figure 8 -(d) shows a schematic diagram of the original morphology image of the second section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0034] Figure 8 -(b) shows a schematic diagram of a tensile image of the first section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0035] Figure 8 -(c) shows a schematic diagram of a tensile image of the second section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0036] Figure 8 -(e) shows a color map of the first orientation information of the first section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0037] Figure 8 -(f) shows a comparative schematic diagram of the color map of the second orientation information of the second section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0038] Figure 9 This diagram illustrates multiple processes obtained in another embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention.

[0039] Figure 9 -(a) shows a schematic diagram of the original morphology image of the first section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0040] Figure 9 -(d) shows a schematic diagram of the original morphology image of the second section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0041] Figure 9 -(b) shows a schematic diagram of a tensile image of the first section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0042] Figure 9 -(c) shows a schematic diagram of a tensile image of the second section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0043] Figure 9 -(e) shows a color map of the first orientation information of the first section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0044] Figure 9 -(f) shows a comparative schematic diagram of the color map of the second orientation information of the second section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0045] Figure 10 This diagram illustrates multiple processes obtained in another embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention.

[0046] Figure 10 -(a) shows a schematic diagram of the original morphology image of the first section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0047] Figure 10 -(d) shows a schematic diagram of the original morphology image of the second section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0048] Figure 10 -(b) shows a schematic diagram of a tensile image of the first section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0049] Figure 10 -(c) shows a schematic diagram of a tensile image of the second section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0050] Figure 10 -(e) shows a color map of the first orientation information of the first section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0051] Figure 10 -(f) shows a comparative schematic diagram of the color map of the second orientation information of the second section obtained in an embodiment of the quasi-in-situ analysis method for polycrystalline materials provided by the present invention;

[0052] Figure 11 A schematic diagram of the structure of a first embodiment of the polycrystalline quasi-in-situ analysis apparatus provided by the present invention is shown.

[0053] Figure 12 A schematic diagram of an embodiment of the polycrystalline quasi-in-situ analysis apparatus provided by the present invention is shown. Detailed Implementation

[0054] Exemplary embodiments of the invention will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention can be implemented in various forms and should not be limited to the embodiments set forth herein.

[0055] The following analysis, based on relevant technologies, examines the testing schemes for polycrystalline performance analysis in existing technologies.

[0056] Unlike single-crystal materials, polycrystalline materials, especially polycrystalline metals, exhibit deformation compatibility behavior between adjacent grains during plastic deformation due to the presence of grains with different orientations or phase compositions. When two adjacent grains are strain-compatible (e.g., the grain orientation difference is less than 30°), dislocations or twins can smoothly transfer strain at the grain boundaries, reducing the difficulty of local strain compatibility. The material may exhibit better plasticity, lower strength, or higher work hardening potential (good toughness). Conversely, when two adjacent grains are strain-incompatible (e.g., the grain orientation difference is greater than 30°), dislocations may accumulate at the grain boundaries, and twin chains may stop at the grain boundaries, failing to effectively transfer strain. This drastically increases the difficulty of local strain compatibility, potentially leading to poorer plasticity, higher strength, or lower work hardening potential (high brittleness). Therefore, precise analysis of the deformation compatibility behavior between polycrystalline grains, revealing its underlying mechanisms, is of significant reference value for optimizing material mechanical properties and adjusting microstructure and composition.

[0057] Taking polycrystalline magnesium alloys as an example, current analytical methods for their intergranular deformation coordination behavior mainly include direct observation, in-situ surface observation, and three-dimensional cross-section observation. All three methods first require mechanical grinding, mechanical polishing, electrolytic polishing, or mechanical polishing of the material surface to obtain a fresh, stress-free, and corrosion-free metal surface, followed by deformation loading of the sample.

[0058] The direct observation method involves observing, after sample loading, whether uneven cracking occurs at grain boundaries, whether dislocations accumulate at grain boundaries, and calculating the possibility of strain coordination between twins and dislocations based on orientation data, thereby analyzing the deformation coordination behavior between grains. Its advantage is its simplicity, but its disadvantage is that it can only deduce the deformation coordination process from the results, which may lead to discrepancies between conclusions and reality. It also makes it difficult to explain special cases, such as deformation occurring even in hard-oriented grains. Furthermore, the direct observation method is limited by the principles of SEM and backscatter diffraction calibration equipment, only allowing observation of grain changes on the sample surface. It cannot observe grain deformation below the surface, nor can it analyze the influence mechanism of thickness-direction grain deformation on surface grain strain coordination.

[0059] In-situ surface observation can be viewed as a combination of multiple direct observation processes. First, the morphology and orientation of the sample surface are observed in its initial state before deformation. Then, repeated observations are performed at various stages of deformation. If the material is still deforming during the observation process, it can be considered in-situ observation. If a pause is needed to fully observe the morphological and orientation changes of all grains within a specific range, it is quasi-in-situ observation. Compared to direct observation, in-situ surface observation can obtain data on the morphological and orientation evolution of material grains throughout the deformation process, allowing analysis of the dominant deformation mechanism and intergranular coordination process during strain coordination between adjacent grains. However, like direct observation, it cannot directly observe the deformation of grains below the sample surface, and cannot analyze the influence mechanism of thickness-direction grain deformation on surface grain strain coordination.

[0060] A typical example of three-dimensional slice observation is three-dimensional electron backscatter diffraction (3D-EBSD) observation. This involves using polishing techniques or dual-beam electron microscopy (FIB) to micro-polish or micro-process the deformed polycrystalline structure, exposing the grain structure at different depths sequentially. EBSD calibration is then performed to obtain grain orientation information along the thickness direction. The orientation changes between grains can be analyzed directly, or the data can be reconstructed into three-dimensional grain data for analysis of intergranular deformation coordination. Its advantage is that it can obtain grain orientation information below the sample surface, thus analyzing the deformation coordination relationship between grains in the depth direction. However, it also has disadvantages such as cumbersome operation, low success rate, and inability to perform in-situ or quasi-in-situ observation, which is not conducive to the accurate analysis of the deformation coordination process between polycrystalline grains.

[0061] This application provides a quasi-in-situ analysis method for polycrystalline materials that takes into account the drawbacks of various analytical methods.

[0062] In one implementation scenario, refer to Figure 1 As shown, this scheme is based on a quasi-in-situ analysis device using polycrystalline materials.

[0063] In one possible implementation scenario, the quasi-in-situ analysis method for polycrystalline materials in this solution can be run on various terminal processing devices for detection, including but not limited to mobile phones, computers, tablets, and other personal terminals.

[0064] Figure 1 A flowchart illustrating a first embodiment of the quasi-in-situ analysis method for polycrystalline materials according to the present invention is shown. This quasi-in-situ analysis method for polycrystalline materials is performed by a quasi-in-situ analysis apparatus, device, and storage medium device. Figure 1 As shown, the method includes the following steps:

[0065] The method includes:

[0066] Step S110: Obtain the processing requirements of N polycrystalline materials with different thicknesses, where N is greater than or equal to 2;

[0067] The processing requirements are set by the user, or can be set as needed when the instrument measures the thickness of the single crystal in the polycrystalline material. When N equals 2, it indicates that the polycrystalline material will be processed into target crystals of at least two thicknesses; when N equals 3, it indicates that the polycrystalline material will be processed into target crystals of at least three thicknesses. The number of target crystals for each thickness is set according to the analysis requirements. Theoretically, the more target crystals, the more accurate the final determination of the polycrystalline deformation coordination mechanism. Generally, to obtain data quickly, only one target crystal is processed for each thickness. It should be noted that, to improve measurement accuracy, the thickness in the processing requirements is generally set to an integer multiple of the single crystal thickness, such as one single crystal thickness, two single crystal thickness, and multiples of the single crystal thickness.

[0068] Optionally, the target crystal includes the single-layer target crystal and the double-layer target crystal.

[0069] At this point, single-layer and double-layer crystals can be effectively analyzed.

[0070] Optionally, refer to Figures 2-5 As shown, the target crystal includes the single-layer target crystal, the double-layer target crystal, and at least one multi-layer target crystal.

[0071] In this design, the thickness of a single-layer target crystal is one times the thickness of a single crystal, the thickness of a double-layer target crystal is twice the thickness of a single crystal, and the thickness of a multi-layer target crystal is the thickness of the corresponding number of single crystal layers. The multi-layer target crystal not only serves as the experimental group for data analysis but also verifies the accuracy of the analytical results corresponding to the single-layer and double-layer thickness data; in other words, it can also be used as an experimental group to verify the reliability of the results.

[0072] The above parameters were analyzed and then set. When analyzing monolayer crystals, since both cross-sections perpendicular to the thickness direction of the monolayer crystal can be set as observation planes, images from both sides can be acquired. The deformation direction, such as slip traces, twinning, or deformation, is then identified through image recognition algorithms.

[0073] When analyzing two-layer crystals, slippage in the thickness direction and crystal constraint variables in the thickness direction are introduced. At this time, unevenness, wrinkles and other phenomena can be collected. The collected images are identified by image recognition algorithms to determine whether it is unevenness or other deformation directions.

[0074] Similarly, when analyzing multilayer crystals, the mutual variables between multilayer crystals are introduced. At this time, since the single-layer and double-layer crystals have basically revealed the variation law of the current type of crystal, the image analysis of multilayer crystals can be carried out on this basis. Only the abnormal deformation phenomenon of the grains needs to be focused on. Specifically, the relevant anomalies can be identified through image recognition algorithms.

[0075] Step S120: Process the polycrystalline material according to the processing requirements to obtain N target crystals of different thicknesses;

[0076] Furthermore, the step of processing the polycrystalline material according to the processing requirements to obtain N target crystals of different thicknesses further includes:

[0077] Obtaining polycrystalline materials with distinct grains;

[0078] Large-grain polycrystalline materials can be obtained by increasing the grain size of polycrystalline materials through high-temperature annealing or other processes.

[0079] Polycrystalline materials are cut to obtain N different thicknesses of semi-finished products;

[0080] Among them, N different thicknesses of semi-finished products, since N is greater than or equal to 2, means that at least single-layer grain samples and double-layer grain samples must be available. For details, please refer to [reference needed]. Figure 6 As shown, material is cut into sheet (plate) tensile test specimens of varying thicknesses using wire cutting or other cutting methods. Generally, to ensure the specimen has only a single or double layer, in actual grinding, the thickness is set to be less than or equal to 1.5 times the grain size as the standard. This yields single-layer and double-layer grain specimens, thus avoiding inaccurate test data caused by differences in the number of layers in the original sample. Alternatively, the thickness can be set to be greater than twice the grain size to obtain multi-layer grain specimens. This step can be performed using a wire cutting instrument or a sheet cutting instrument.

[0081] In one embodiment, AZ91 magnesium alloy was selected and subjected to a high-temperature heat treatment at 400°C for 24 hours to achieve a grain size of approximately 500–3000 μm. Subsequently, the sample was cut into two sets of in-situ tensile test samples (target crystals) using wire cutting, with thicknesses of 0.3 mm and 0.6 mm, or three sets as shown in the figure. Figure 6 The in-situ tensile test samples (target crystals) of the dimensions shown have thicknesses of 0.3 mm, 0.6 mm, and 0.9 mm, respectively.

[0082] The semi-finished products of N different thicknesses are mechanically ground and polished to obtain primary products of N different thicknesses.

[0083] For each set of samples, both sides are mechanically sanded and polished until there are no scratches. For example, 150#, 250#, 40#, 600#, 800#, 1000#, 2000#, 3000#, and 4000# wet sandpaper can be used to mechanically sand the three sets of samples on both sides in sequence.

[0084] Electrolytic polishing or mechanical vibration polishing is performed on N primary products of different thicknesses to obtain N secondary products of different thicknesses.

[0085] use Figure 7 The double-sided synchronous electropolishing device in the middle performs double-sided synchronous electropolishing on the sample. Figure 7 The double-sided synchronous electropolishing device consists of an electrolytic cell 1, an anode sample 2, an electrolyte 3, a cathode 4, an ammeter 5, a DC power supply 6, an anode electrode 7, a sliding table 8, a magnetic stirring rod 9, and a magnetic stirring platform 10. This device has two cathode electrodes (4 pieces) distributed at both ends of the electrolytic cell. The sample to be polished is fixed on the anode plate 7 in the middle, and the two surfaces of the sample are parallel to the two cathode plates 4 respectively. The distance between a single cathode plate 4 and one side of the sample can be adjusted arbitrarily. An electromagnetic stirring system can be installed at the bottom of the electrolytic cell 1 to make the electropolishing more uniform. The type of electropolishing solution used depends on the material being polished. It should be noted that mechanical vibration polishing or other methods can also be used instead of electropolishing; in this case, the polished side should be protected with PTFE tape, rubber sheets, etc., when polishing the other side.

[0086] The secondary products of N different thicknesses are subjected to low-pressure polishing to obtain N different thicknesses of test products that can be calibrated.

[0087] When the DC power supply voltage is set to a relatively low level, the sample surface can be polished to a smooth, stress-free, and contaminant-free state within a specific time period, resulting in a fresh surface that can be used for characterization experiments such as EBSD calibration.

[0088] High-pressure polishing was performed on N calibrable experimental samples of different thicknesses to obtain N target crystals of different thicknesses that could be labeled and calibrated.

[0089] Increasing the voltage for a short period of high-voltage polishing can over-polish the sample surface, creating scattered pits or protrusions that can serve as markers for strain measurements. It should be noted that, in this case, the N target crystals of different thicknesses can be represented by one or more samples of each thickness. Furthermore, to verify the accuracy of the analytical results, a multi-layered grain sample can be prepared to obtain a multi-layered target crystal.

[0090] Using the above method, taking polycrystalline metal materials as an example, firstly, ultra-large grain (approximately 500–3000 μm) metal material bulks are prepared using a high-temperature, long-duration heat treatment process. Then, quasi-in-situ tensile plate samples of different thicknesses are fabricated using methods such as wire cutting or turning. By setting different thicknesses, the samples can exhibit single-layer, double-layer, or multi-layer grain structures in the thickness direction. Subsequently, double-sided mechanical polishing and a special double-sided electrolytic polishing process are used to allow for in-situ or quasi-in-situ morphological evolution imaging and grain orientation evolution measurement on both surfaces of the samples.

[0091] Step S130: Execute the first loop process until n is greater than N;

[0092] Reference Figure 2 As shown, the first loop includes:

[0093] Step S1301: Obtain the original morphology image corresponding to the nth target crystal, where n is greater than or equal to 1;

[0094] At this point, the original morphology image is obtained by photographing the polished target crystal using OM or SEM, and orientation is determined using EBSD to obtain the initial grain orientation information. In a single-layer grain sample, the grains in the corresponding regions on both sides are the same grain, and therefore have the same orientation. In a double-layer or multi-layer grain sample, the grains corresponding to the two sides are different grains, and therefore their orientations will be different.

[0095] Step S1302: Obtain the stretching image corresponding to the nth target crystal;

[0096] The tensile image is obtained by sampling after the strain of the target crystal meets the preset strain or after the target crystal breaks, and can provide feedback on the deformation of the target crystal after the ultimate tensile force.

[0097] Step S1303: Obtain the number of layers of the nth target crystal;

[0098] The number of layers refers to the number of grains in the target crystal.

[0099] Step S1304: For the nth target crystal, perform image analysis based on the number of layers of the nth target crystal, the original morphology image of the nth target crystal, and the tensile image of the nth target crystal to obtain the layered polycrystalline deformation coordination mechanism of the nth target crystal, with n increasing by 1;

[0100] In this process, for each target crystal, the first cycle described above is executed. After each cycle, a hierarchical polycrystalline deformation coordination mechanism for the nth target crystal can be obtained. This feedback hierarchical polycrystalline deformation coordination mechanism is obtained by image analysis based on the number of layers, the original morphology image of the nth target crystal, and the tensile image of the nth target crystal, which can fully reflect the deformation mechanism of the corresponding target.

[0101] Step S140: Obtain the polycrystalline deformation coordination mechanism of the polycrystalline material based on the hierarchical polycrystalline deformation coordination mechanism of the N target crystals.

[0102] The technical solution of this application establishes N processing requirements for any polycrystalline material, that is, at least two processing parts of different thicknesses. By analyzing the stretching and deformation parameters of each target crystal, the hierarchical polycrystalline deformation coordination mechanism of multiple target crystals can be obtained. The deformation coordination differences of multiple target crystals can be compared and obtained. By summarizing the hierarchical polycrystalline deformation coordination mechanisms of multiple target crystals, the polycrystalline deformation coordination mechanism of the polycrystalline material can be obtained. This eliminates the need for observation through direct observation, in-situ surface observation, and three-dimensional slice observation, and can accurately and clearly explain the intrinsic mechanism of deformation coordination between polycrystalline material grains.

[0103] In one alternative approach, the step of obtaining the stretched image corresponding to the nth target crystal includes:

[0104] The second cycle is executed until the strain of the target crystal reaches the preset strain or the tensile force of the target crystal reaches the preset tensile force, and the tensile image of the (M-1)th target crystal is taken as the tensile image corresponding to the nth target crystal.

[0105] The second cycle process is as follows:

[0106] The target crystal is subjected to the Mth tensile force value in the target tensile force scheme to cause the target crystal to be stretched and deformed, wherein the Mth tensile force value is less than a preset tensile force value;

[0107] At this point, the Mth tensile force value of the target tensile scheme needs to be set for different types and layers of target crystals to ensure that the target crystal will not break at once, nor will it be so small as to not cause deformation. It also needs to ensure that the target crystal changes to a certain extent during each stretching process, so that users can easily observe the deformation evolution process.

[0108] The stretched image of the target crystal after stretching deformation is updated to the Mth stretched image of the nth target crystal, the value of M is incremented by 1, and the real-time strain of the target crystal and whether the target crystal is fractured after stretching deformation are detected; M is greater than 1.

[0109] The real-time strain is measured by the displacement of the crossbeam or clamp, or by using a video extensometer. Whether it is broken can also be determined by detecting the tension on both sides of the fixed end. When the tension is equal to the preset tension value, it is determined that both ends are broken, and the tensile image of the nth target crystal is output.

[0110] The above method can avoid uneven stress caused by manual stretching, as well as partial deformation caused by insufficient stress. It standardizes the stretching operation, avoids improper operation from affecting the results of subsequent measurements, and ensures the accuracy and reliability of the determined deformation coordination mechanism between polycrystalline materials.

[0111] In one alternative approach, the step of obtaining the layer number of the nth target crystal is as follows:

[0112] Electron backscatter diffraction pattern calibration is performed on the nth target crystal;

[0113] Among them, electron backscatter diffraction pattern calibration is actually to calibrate the orientation of each grain in the target crystal, and different colors indicate different orientations of the grains.

[0114] Obtain the orientation information color map of two corresponding cross-sections after calibration, wherein the cross-sections are perpendicular to the thickness direction of the target crystal;

[0115] The number of layers of the target crystal is determined based on the comparison results of the two orientation information color maps.

[0116] Using the above method, the thickness / number of layers of the target crystal can be quickly determined, enabling rapid measurement.

[0117] In one alternative approach, when the orientation information color maps of two stretched images have the same color and the color overlap range exceeds a preset ratio range, it is confirmed that the current layer is a single layer.

[0118] When the orientation information colors of the grains on the first cut surface correspond exactly to those on the second cut surface—meaning the colors, number of colors, relative positions of each color, and area occupied by each color are all identical on both cut surfaces—it can be accurately determined that the target crystal is a monolayer. In other words, if only one grain exists at the same location on each cut surface, meaning this grain extends throughout the thickness of the target crystal, it proves that the target crystal is a monolayer crystal structure.

[0119] When the colors of the orientation information color maps of the two stretched images are different and / or the color overlap range is less than a preset ratio range, the measuring instrument is controlled to measure the thickness of the target crystal to obtain the sample thickness, and the direction of the thickness is parallel to the direction of the cut surface.

[0120] In this context, different colors in the orientation information color map of the stretched image indicate differences in any of the following parameters: color of the two cross-sections, number of colors, relative position of each color, or area occupied by each color. It should be noted that at this point, it is possible to determine whether it is a single-layer target crystal. Even if the color overlap range is below a preset ratio, it can still be used to determine whether it is a single-layer target crystal. Combining both methods avoids inaccurate judgments caused by line cutting. Subsequently, since the two cross-sections of a double-layer or multi-layer target crystal may have the same or different colors, making judgment difficult, it is necessary to use a measuring instrument to measure the thickness of the target crystal to obtain the sample thickness.

[0121] The number of crystal layers of the target crystal is determined based on the thickness.

[0122] Using the above methods, regardless of the number of crystal layers in the target crystal, the number of crystal layers can be quickly obtained using the two methods described above.

[0123] In one alternative approach, the processing requirements include thickness requirements and quantity requirements corresponding to those thicknesses, and the step of processing the polycrystalline material according to the processing requirements to obtain N target crystals of different thicknesses includes:

[0124] When the thickness requirement is a single-layer crystal thickness, the polycrystalline material is processed according to the single-layer crystal thickness processing method to obtain a single-layer target crystal corresponding to the quantity requirement;

[0125] The single-layer crystal thickness processing method involves processing polycrystalline materials according to the thickness of a single crystal, with the quantity requirement set by the user. Generally, to ensure that the sample contains only a single layer, the target grinding thickness is set to be less than a single grain thickness / size, for example, 0.5 to 0.9 times the grain size, thus ensuring that there is only one layer of crystal in the target crystal.

[0126] When the thickness requirement is a double-layer crystal thickness, the polycrystalline material is processed according to the double-layer crystal thickness processing method to obtain the target double-layer crystal corresponding to the quantity requirement;

[0127] The double-layer crystal thickness processing method involves processing polycrystalline materials according to the thickness of the double-layer crystals, with the quantity requirement set by the user. Generally, to ensure that the sample contains only double layers, the target grinding thickness is set to be less than twice the grain thickness / size, for example, 1.5 to 1.9 times the grain size, with 1.5 times being preferred, thus ensuring that the target crystal contains only double-layer crystals.

[0128] When the thickness requirement is p-layer crystal thickness, the polycrystalline material is processed according to the multi-layer crystal thickness processing method to obtain the target crystal with p layers corresponding to the quantity requirement, where P is greater than or equal to 3.

[0129] The p-layer crystal thickness processing method involves processing polycrystalline materials according to the thickness of the p-layer crystals, with the quantity requirement set by the user. Generally, to ensure the sample contains only p-layers, the target grinding thickness is set to be less than p times the grain thickness / size, for example, p-0.9 times to p-0.1 times the grain size, thus ensuring that the target crystal contains only p-layer crystals.

[0130] Alternatively, the thickness can be set to be greater than twice the grain size to obtain a multi-layer grain sample.

[0131] Alternatively, to facilitate polishing and save experimental materials, the polishing requirement can be set to 2.5 times the grain size.

[0132] By precisely controlling the thickness of the target crystal, samples with single-layer, double-layer, or multi-layer grain structures in the thickness direction are prepared. Using a special surface treatment process, both opposite surfaces of the sample can be observed in situ or quasi-in-situ using SEM or EBSD. By comparing the differences in deformation coordination behavior between the two opposite surfaces of double-layer grains, and the orientation evolution relationship between grains at relative positions in the upper and lower layers, the deformation coordination process between each grain can be clearly analyzed, revealing the polycrystalline deformation coordination mechanism in the thickness direction. By comparing the differences in deformation coordination behavior between single-layer, double-layer, and multi-layer grains, the influence mechanism of grain deformation coordination behavior in the thickness direction on the overall deformation capacity of the material can be further obtained. This invention cleverly overcomes the shortcomings of existing analytical methods, enabling in-situ or quasi-in-situ observation and analysis of the deformation coordination behavior between grains in the thickness direction of polycrystalline materials, providing a more convenient analytical means for analyzing the intrinsic deformation mechanism of polycrystalline materials.

[0133] In an optional implementation, the step of performing image analysis on the nth target crystal based on the number of layers of the nth target crystal, the original morphological image of the nth target crystal, and the stretched image of the nth target crystal to obtain the layered polycrystalline deformation coordination mechanism of the nth target crystal, wherein n is incremented by 1, includes:

[0134] Step S13041: Perform electron backscatter diffraction pattern calibration on the nth target crystal to be detected;

[0135] Step S13042: Obtain the first orientation information color map corresponding to the original morphology image of the nth target crystal before the stretching deformation action is performed;

[0136] In the electron backscatter diffraction (EBSD) calibration, different colors represent different grain orientations. When the orientation information colors of the grains on both sides correspond to the same color, it indicates that there is only one grain in the corresponding location. In other words, this grain runs through the entire thickness direction of the sample, proving that the sample has a monolayer crystalline structure.

[0137] Step S13043: Obtain the second orientation information color map corresponding to the stretching image of the nth target crystal after the stretching deformation action is completed;

[0138] It should be noted that the first orientation information color map and the second orientation information color map should be images from the same cross section for easy comparison. Alternatively, the first orientation information color maps and the second orientation information color maps from both cross sections can be compared to obtain a more comprehensive result.

[0139] Step S13044: Determine the deformation size, initial position, and final position of each grain based on the two first orientation information color maps and the second orientation information color map;

[0140] This step can be achieved through image recognition combined with software. The specific process is as follows: Using code, the percentage of similar orientations (e.g., a deviation of 5°) of the measured points on the relative coordinates of both sides reaches a threshold (e.g., 60%). This can further determine whether it is a monolayer crystal sample. Alternatively, one can directly observe whether the colors of the grains on the corresponding sides, used to indicate orientation information, are the same to determine if they are the same grain. When the grain colors are the same and the sample thickness is less than one grain, it can be considered the same grain, and the sample is a monolayer crystal structure; otherwise, it is a bilayer or multilayer crystal structure.

[0141] Step S13045: Determine the strain and orientation change of each grain before and after deformation based on the deformation of each grain, the initial position, and the final position;

[0142] Slip traces are obtained through conventional image convolution processing and filtering. Their angle with the horizontal direction of the image is then identified to determine the slip trace orientation. Alternatively, a protractor or other angle measuring tools can be used to measure the angle between the slip trace and the horizontal direction to determine the orientation. Simultaneously, the theoretical orientation of each slip system trace is calculated based on the Euler angles of the corresponding grain orientations. If the difference between the theoretical orientation and the actual slip trace orientation is less than a set threshold (e.g., 5°), it can be determined as a slip trace, proving that this slip was activated during deformation. The same principle applies to twins.

[0143] Step S13046: Based on the orientation changes of each grain before and after deformation, determine the Schmitt factor of the basal slip system of each grain and the deformation compatibility factor between the slip systems and twin systems of adjacent grains.

[0144] The Schmidt factor of the basal slip system and the deformation compatibility factor of adjacent grains;

[0145] The formula for calculating the Schmidt factor is as follows:

[0146] SF = cosα·cosβ

[0147] Where α is the angle between the slip direction or twin shear direction and the external load direction, and β is the angle between the normal of the slip plane or twin plane and the loading direction. Both are derived from Euler angle information.

[0148] Formula for calculating deformation compatibility factor:

[0149] m=cosδ·cosγ

[0150] Where δ is the angle between the slip directions of the corresponding slip systems of adjacent grains, and γ is the angle between the normals of the slip planes of the corresponding slip systems. At this point, by calculating the Schmitt factor of mechanisms such as basal plane slip, cylindrical slip, and tensile twinning within each grain, and comparing it with the type of activated slip system, it can be determined whether the activated slip system has the largest Schmitt factor. If so, it indicates that it follows Schmitt's law; otherwise, it is considered an anomaly. For anomalies, the deformation compatibility factor between the activated slip system and the basal plane, cylindrical plane, or tensile twinning mechanisms of adjacent grains can be further calculated.

[0151] Step S13047: Determine the polycrystalline deformation coordination mechanism of the nth target crystal based on the number of layers of the nth target crystal, the original morphology image of the nth target crystal, the deformation of the nth target crystal, the strain of each grain in the nth target crystal, the Schmitt factor of the basal slip system of the nth target crystal, and the deformation coordination factor of the nth target crystal.

[0152] The above-described process for determining the hierarchical polycrystalline deformation coordination mechanism of the nth target crystal is based on comparing the obtained data with data from the prior art to obtain comparison results, which are then summarized. For example: 1. If the deformation coordination factor between the activated deformation mechanism in an adjacent grain and the activated slip system in this grain is greater than a threshold (e.g., 0.6, with a maximum of 1.0), it can be determined that the activation of this slip system is the result of the combined action of macroscopic load and adjacent grains.

[0153] 2. Image recognition algorithms are used to identify abnormal areas for conditions such as unevenness, tearing, etc., which could lead to localized stress concentration or disorder, and consequently, anomalous activation of local deformation mechanisms. Existing digital image correlation technology can correlate the same parts of the sample surface before and after deformation, obtaining the changes in the position coordinates of the corresponding parts before and after deformation, thereby obtaining the in-plane strain, and generating corresponding strain contour maps (or strain cloud maps) on both surfaces of the entire sample. By statistically analyzing the strain mean, standard deviation, or variance of all calculated points and comparing it with the preset (or read from the tensile / compression testing machine) macroscopic strain values, the difference between the observed surface strain level and the macroscopic strain, as well as the level of strain concentration, can be obtained.

[0154] 3. Using a ruler and vernier calipers, the spacing changes of easily identifiable characteristic patches and edges on the sample before and after deformation are measured to statistically analyze the average strain value of the local area. The difference between the observed surface strain level and the macroscopic strain is analyzed. The larger the standard deviation or variance of the strain distribution, the higher the level of strain concentration, indicating less intergranular strain coordination within the sample, and that the deformation mechanism is mainly dislocation slip within individual grains. Conversely, a smaller standard deviation indicates more intergranular strain coordination, which is beneficial for fully utilizing the material's plastic deformation capacity. Based on the above implementation scheme of the hierarchical polycrystalline deformation coordination mechanism, the process of obtaining the polycrystalline deformation coordination mechanism of the polycrystalline material based on the hierarchical polycrystalline deformation coordination mechanism of N target crystals is as follows:

[0155] The following three implementation cases illustrate the implementation of the above scheme:

[0156] Case 1, the original morphology image obtained from steps S13041-S13043, the stretched image, and the orientation information color map are as follows: Figure 8 As shown, the process of obtaining the polycrystalline deformation coordination mechanism of the polycrystalline material using the above scheme is as follows:

[0157] exist Figure 8 In the middle, for reference Figure 8 -(c) and Figure 8 As shown in -(f), the grains from left to right are numbered as grain 1, grain 2, grain 3, grain 4 and grain 5.

[0158] Figure 8 The morphological evolution and grain orientation of a 0.3mm thick sample before and after deformation are shown below: Figure 8 -(a) and Figure 8 -(d) are the original topographic images of the two plates before deformation, i.e., the original topographic images. Figure 8 -(b) and Figure 8 -(e) are the stretched images of the two plates after deformation. Figure 8 -(c) and Figure 8-(f) shows the grain orientations within the two plates after deformation, i.e., the orientation information color diagrams. Grains with the same color are the same grain. Figure 8 -(c) and Figure 8 -(f) shows that the sample has only one grain in the thickness direction, and the plastic deformation is concentrated only within one grain. The target crystal thickness was measured using vernier calipers. Figure 8 The sample thickness is 0.3 mm. EBSD calibration results show that the orientation information colors of the grains on both sides are the same, indicating that only one grain exists in the corresponding location. This means that the grain extends throughout the entire thickness of the sample, proving that the sample has a monolayer crystalline structure. Furthermore, morphological information shows that the deformation occurs at the same location on both sides, within grain ③. Surface deformation only occurs within this grain; there is no obvious deformation within adjacent grains. The deformation process of the monolayer crystalline sample does not exhibit strain coordination between grains. Therefore, steps S13044 and S13045 only yield the basal plane slip Schmidt factor. The basal plane slip Schmidt factor for each grain is shown in the table below:

[0159]

[0160]

[0161] Table 1

[0162] Table 1 above is related to Figure 8 Corresponding to the basal slip Schmidt factor of each grain (the theoretical maximum value of 0.5 in uniaxial tensile testing), the Schmidt factor of this grain is calculated. The hierarchical polycrystalline deformation coordination mechanism obtained in step S13046 is that the basal slip Schmidt factor matches a higher Schmidt factor, meaning it has preferential deformation capability. In other words, this grain has the highest basal slip system and can deform most preferentially. Since there is no grain restriction in the thickness direction, its internal dislocations can directly slide out of the grain surface, resulting in no significant work hardening. Therefore, it is always in a preferential deformation position relative to other grains.

[0163] Case 2, the original morphology image obtained from steps S13041-S13043, the stretched image, and the orientation information color map are as follows: Figure 9 As shown, the process of obtaining the polycrystalline deformation coordination mechanism of the polycrystalline material using the above scheme is as follows:

[0164] exist Figure 9 In the middle, for reference Figure 9 -(c) and Figure 9 As shown in -(f), the grains in 9-(c) are numbered sequentially from left to right as grain 1, grain 2, etc. Figure 9 The -f option numbers the grains from left to right as grain 3, grain 4, etc. Figure 9The morphological evolution and grain orientation of a 0.6 mm thick sample before and after deformation are shown in Figures 9-(a) and 9-(d), which are the original morphological images of the two plates before deformation; Figures 9-(b) and 9-(e), which are the tensile images of the two plates after deformation; and Figures 9-(c) and 9-(f), which are the grain orientations within the two plates after deformation, i.e., the orientation information color maps. Grains of the same color are the same grain. Comparing Figures 9-(c) and 9-(f), it can be seen that there is only one layer of grains in a local area on the left half of the sample in the thickness direction, while two grains on the right half are inclined and penetrate the entire thickness of the sample. Plastic deformation is concentrated within one of the grains. The grain deformation is also very concentrated in the 0.3 mm and 0.6 mm thick samples, as measured using vernier calipers. Figure 9 The total thickness was measured to be approximately 0.6 mm using vernier calipers. Steps S13044 and S13045 were performed to obtain the Schmidt factor of the base surface slip system, as shown in Table 2 below.

[0165]

[0166] Table 2

[0167] Table 2 shows the results. Figure 9 The Schmidt factor of the basal plane slip system corresponding to the middle grain was used to locate the deformation of the nth target crystal. It was found that only individual crystals 1, 2, 3, and 4 showed significant changes in crystal area. Their initial and final positions did not change much. Therefore, the corresponding hierarchical polycrystalline deformation coordination mechanism is that surface deformation only occurs within this grain, with no significant deformation within adjacent grains. Furthermore, Figure 9 The grain with the highest basal slip Schmidt factor extends throughout the entire sample thickness. Step S13044 reveals that significant slip occurred only within this grain (accumulation of slip traces and grain unevenness leading to a darkening of the morphology). EBSD calibration results indicate that only one grain exists in the corresponding region, thus exhibiting similar deformation behavior to the 0.3 mm thick target crystal in Example 1. Therefore, it can be concluded that when the sample has a monolayer grain structure, the sample thickness has no significant impact on its intergranular deformation coordination behavior.

[0168] Case 3, the original morphology image obtained from steps S13041-S13043, the stretched image, and the orientation information color map are as follows: Figure 10 As shown, the process of obtaining the polycrystalline deformation coordination mechanism of the polycrystalline material using the above scheme is as follows:

[0169] refer to Figure 10 -(c) and Figure 10 As shown in (f), the grains in 10-(c) are numbered from left to right as grain 1, grain 2, grain 3, and grain 4. Figure 10-(f) The grains from left to right are numbered as grain 5; morphological evolution and grain orientation of the 0.9mm thick sample before and after deformation: 10-(a) and 10-(d) are the morphologies of the two plate surfaces before deformation, 10-(b) and 10-(e) are the morphologies of the two plate surfaces after deformation, and 10-(c) and 10-(f) are the grain orientations within the two plate surfaces after deformation. Grains of the same color are the same grain. Comparing 10-(c) and 10-(f), it can be seen that the sample has two layers of grains in the thickness direction. The measurement results show that the plastic strain is relatively uniformly distributed throughout the sample. The two layers of grains have significantly different degrees of deformation. The process of obtaining the number of layers of the target crystal is as follows: EBSD calibration results show that the grain colors representing grain orientation are different in the corresponding areas on the front and back sides, that is, the corresponding parts on the two sides are different grains. The thickness of this sample was measured to be 0.9 mm by vernier calipers. Since the sample grain size is about 0.5 to 3 mm, there should not be three or more grain structures in the thickness direction of this sample. It can only be a typical bilayer crystal structure. Steps S13044-S13045 are performed to obtain the Schmidt factor of the basal slip system and the deformation compatibility factor as shown in Tables 3 and 4.

[0170]

[0171] Table 3

[0172]

[0173] Table 4

[0174] Table 3 shows the results of... Figure 10 Schmitt factor of basal plane slip system of each grain in the table is shown in Table 4. Figure 10 Calculation of deformation compatibility factor between adjacent grains. Step S13044 shows that after deformation, one side ( Figure 10 -(b)) Numerous depressions or protrusions caused by strain incompatibility between grains can be observed, and wrinkles are present in some areas due to difficulties in deformation. Then, based on the execution results of step S13046, it can be concluded that:

[0175] 1. Based on the identification of slip trace types, it can be seen that some grains exhibited basal slip, while others exhibited prismatic slip (prismatic slip is a slip mechanism in the hexagonal crystal system, i.e., a slip system that slips within the six rectangular lateral faces of a hexagonal prism; basal slip is a slip system that occurs within the two base faces; pyramidal slip or twins are slip systems or twins on internal inclined planes; each slip system or twin has 3 or 6 variants depending on the shear direction (determined by 3 sets of mutually parallel opposite sides, or 6 crystallographically equivalent slip planes)).

[0176] 2. Comparison Figure 10As shown in -(c) and 10-(f) and Tables 3 and 4, both grains on the front and back sides have high basal slip Schmidt factors, making basal slip highly likely in these areas, resulting in the most pronounced unevenness. However, due to the low basal slip deformation compatibility factors between grains 1 and 5, their strain compatibility is poor, and the unevenness on both sides differs significantly. Grain 1 exhibits obvious wrinkles, while grain 5 shows more depressions, which is caused by material compression from grain 5 towards grain 1. Furthermore, grain 2 has a low basal slip Schmidt factor, making basal slip less likely. However, since the basal slip deformation compatibility factor between adjacent grain 1 and grain 2 is 0.57, based on the above values, grain 1 has a certain promoting effect. Figure 10 -(b) shows that a certain amount of basal slip also occurs inside grain 2. Similarly, the basal slip Schmitt factor of grain 4 is close to 0, which is a hard orientation and belongs to the numerical range where basal slip is not easy to occur. However, the basal slip Schmitt factor of the adjacent grain 3 is 0.37 and the cylindrical slip Schmitt factor is 0.38, which are both more easily activated.

[0177] 3. The calculation results in Table 4 show that although the basal slip deformation compatibility factors of grain 3 and grain 4 are low, the cylindrical slip deformation compatibility factor of grain 3 and grain 4 is relatively high at 0.69. Therefore, based on the value of the slip deformation compatibility factor, it is determined that grain 3 exhibited cylindrical slip, which coordinated with grain 4 to exhibit basal slip. A large amount of slip was accumulated at the grain boundaries, resulting in an uneven grain boundary phenomenon. This result can well explain the anomalous deformation phenomenon of grain 4.

[0178] Therefore, through the above process, parameters such as basal slip, cylindrical slip, and twinning are matched based on the number of layers of the nth target crystal, the original morphology image of the nth target crystal, the Schmitt factor of the basal slip system of the nth target crystal, and the deformation compatibility factor of the nth target crystal. Thus, the deformation compatibility behavior corresponding to the parameters is taken as part of the hierarchical polycrystalline deformation compatibility mechanism, and the hierarchical polycrystalline deformation compatibility mechanism of the nth target crystal is obtained.

[0179] By matching the data range of the obtained data, the matching analysis results can be obtained, and the deformation coordination behavior between grains in the thickness direction of the material can be directly obtained, and its intrinsic mechanism can be analyzed. The method provided by this invention can observe the deformation coordination behavior between grains in the thickness (or depth) direction in situ without slicing the sample, providing a more accurate and convenient analytical method for revealing the intrinsic mechanism of deformation coordination behavior between grains in polycrystalline materials.

[0180] Figure 11 A schematic diagram of an embodiment of the quasi-in-situ analysis apparatus for polycrystalline materials of the present invention is shown. Figure 3As shown, the quasi-in-situ analysis device 300 for polycrystalline materials includes: a parameter acquisition module 310, a calculation module 320, and an analysis module 330.

[0181] In one alternative approach, parameter acquisition module 310 is used to acquire the processing requirements of N polycrystalline materials of different thicknesses, where N is greater than or equal to 2.

[0182] The execution module 320 is used to process the polycrystalline material according to the processing requirements to obtain N target crystals of different thicknesses and to execute the first cycle process until n is greater than N;

[0183] The first loop process is as follows: acquire the original morphology image corresponding to the nth target crystal, where n is greater than or equal to 1; acquire the stretched image corresponding to the nth target crystal; acquire the number of layers of the nth target crystal; for the nth target crystal, perform image analysis based on the number of layers of the nth target crystal, the original morphology image of the nth target crystal, and the stretched image of the nth target crystal to obtain the layered polycrystalline deformation coordination mechanism of the nth target crystal, where n increments by 1;

[0184] Analysis module 330 is used to obtain the polycrystalline deformation coordination mechanism of the polycrystalline material based on the hierarchical polycrystalline deformation coordination mechanism of the N target crystals.

[0185] In an alternative embodiment, the execution module 320 is configured to execute a second cycle process until the strain of the target crystal reaches a preset strain or the tensile force of the target crystal reaches a preset tensile force.

[0186] A tensile force matching that of the nth target crystal is applied to the target crystal to cause the target crystal to be stretched and deformed.

[0187] The stretched image of the target crystal after stretching deformation is updated to the stretched image corresponding to the nth target crystal. The value of M is incremented by 1, and the real-time strain of the target crystal and whether the target crystal after stretching deformation is broken are detected; M is greater than 1.

[0188] In an optional manner, the execution module 320 is used to perform electron backscatter diffraction pattern calibration on the nth target crystal; obtain orientation information color maps of two opposite cross-sections after calibration, the cross-sections being perpendicular to the thickness direction of the target crystal; and determine the number of layers of the target crystal based on the comparison result of the two orientation information color maps.

[0189] In an alternative approach, the execution module 320 is configured to confirm that the current state is a single layer when the colors of the two orientation information color maps are the same and / or the color overlap range exceeds a preset ratio range.

[0190] When the colors of the two orientation information color maps are different and the color overlap range is less than a preset ratio range, the measuring instrument is controlled to measure the thickness of the target crystal to obtain the sample thickness.

[0191] The number of crystal layers of the target crystal is determined based on the thickness.

[0192] In an alternative embodiment, the execution module 320 is used to perform electron backscatter diffraction pattern calibration on the nth target crystal to be detected;

[0193] Obtain the first orientation information color map corresponding to the original morphology image of the nth target crystal before the stretching deformation action is performed;

[0194] Obtain the second orientation information color map corresponding to the stretched image of the nth target crystal after the stretching deformation action is completed;

[0195] The deformation, initial position, and final position of each grain are located based on the first orientation information color map and the second orientation information color map.

[0196] The basal slip system Schmidt factor of each grain and the deformation compatibility factor of adjacent grains are determined based on the deformation of each grain, the initial position, and the final position.

[0197] The hierarchical polycrystalline deformation coordination mechanism of the nth target crystal is determined based on the number of layers of the nth target crystal, the original morphological image of the nth target crystal, the deformation of the nth target crystal, the Schmitt factor of the basal plane slip system of the nth target crystal, and the deformation coordination factor of the nth target crystal.

[0198] Figure 12 The diagram shows a schematic representation of an embodiment of the quasi-in-situ analysis device for polycrystalline materials according to the present invention. The specific embodiments of the present invention do not limit the specific implementation of the quasi-in-situ analysis device for polycrystalline materials.

[0199] like Figure 12 As shown, the quasi-in-situ analysis device for polycrystalline materials may include: a processor 402, a communications interface 404, a memory 406, and a communications bus 408.

[0200] The processor 402, communication interface 404, and memory 406 communicate with each other via communication bus 408. Communication interface 404 is used to communicate with other network elements such as clients or other servers. The processor 402 executes program 410, specifically performing the relevant steps described in the embodiment of the quasi-in-situ analysis method for polycrystalline materials.

[0201] Specifically, program 410 may include program code, which includes computer-executable instructions.

[0202] Processor 402 may be a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement embodiments of the present invention. Quasi-in-situ analysis method, apparatus, and storage medium for polycrystalline materials.

[0203] The device includes one or more processors, which can be processors of the same type, such as one or more CPUs; or processors of different types, such as one or more CPUs and one or more ASICs.

[0204] Memory 406 is used to store program 410. Memory 406 may include high-speed RAM memory, and may also include non-volatile memory, such as at least one disk storage device.

[0205] Specifically, program 410 can be called by processor 402 to enable the polycrystalline quasi-in-situ analysis device to perform the above-mentioned polycrystalline quasi-in-situ analysis method.

[0206] This invention provides a storage medium storing at least one executable instruction. When the executable instruction is executed on a polycrystalline quasi-in-situ analysis device / apparatus, it causes the polycrystalline quasi-in-situ analysis device / apparatus to perform the polycrystalline quasi-in-situ analysis method in any of the above method embodiments.

[0207] The algorithms or displays provided herein are not inherently related to any particular computer, virtual system, or other device. Furthermore, the embodiments of this invention are not directed to any particular programming language.

[0208] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of the invention may be practiced without these specific details. Similarly, for the sake of brevity and to aid in understanding one or more aspects of the invention, in the description of exemplary embodiments of the invention above, various features of the embodiments are sometimes grouped together in a single embodiment, figure, or description thereof. The claims, which follow the detailed description, are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of the invention.

[0209] Those skilled in the art will understand that the modules in the device of the embodiment can be adaptively changed and placed in one or more devices different from that embodiment. Modules, units, or components in the embodiment can be combined into a single module, unit, or component, and further, they can be divided into multiple sub-modules, sub-units, or sub-components, except that at least some of such features and / or processes or units are mutually exclusive.

[0210] It should be noted that the above embodiments are illustrative of the invention and not restrictive, and that those skilled in the art can devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses should not be construed as limiting the claims. The word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention can be implemented by means of hardware comprising several different elements and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by the same item of hardware. The use of the words first, second, and third, etc., does not indicate any order. These words can be interpreted as names. The steps in the above embodiments, unless otherwise specified, should not be construed as limiting the order of execution.

Claims

1. A method for quasi-in-situ analysis of polycrystalline materials, characterized by, The method includes: Obtain the processing requirements for N polycrystalline materials of different thicknesses, where N is greater than or equal to 2; The polycrystalline material is processed according to the processing requirements to obtain N target crystals of different thicknesses; The first loop continues until n is greater than N; The first loop includes: Obtain the original morphology image corresponding to the nth target crystal, where n is greater than or equal to 1; Obtain the stretched image corresponding to the nth target crystal; Obtain the number of layers of the nth target crystal; For the nth target crystal, image analysis is performed based on the number of layers of the nth target crystal, the original morphology image of the nth target crystal, and the tensile image of the nth target crystal to obtain the layered polycrystalline deformation coordination mechanism of the nth target crystal, with n increasing by 1; The polycrystalline deformation coordination mechanism of the polycrystalline material is obtained based on the hierarchical polycrystalline deformation coordination mechanism of the N target crystals; The target crystal includes a single-layer target crystal and a double-layer target crystal; or, The target crystal includes a single-layer target crystal, a double-layer target crystal, and a multi-layer target crystal; For the nth target crystal, image analysis is performed based on the number of layers of the nth target crystal, the original morphological image of the nth target crystal, and the stretched image of the nth target crystal to obtain the layered polycrystalline deformation coordination mechanism of the nth target crystal. The steps of incrementing n by 1 include: Electron backscatter diffraction pattern calibration is performed on the nth target crystal to be tested; Obtain the first orientation information color map corresponding to the original morphology image of the nth target crystal before the stretching deformation action is performed; Obtain the second orientation information color map corresponding to the stretched image of the nth target crystal after the stretching deformation action is completed; The deformation, initial position, and final position of each grain are located based on the first orientation information color map and the second orientation information color map. The strain and orientation change before and after deformation of each grain are determined based on the deformation of each grain, the initial position, and the final position. Based on the orientation changes of each grain before and after deformation, the Schmidt factor of the basal slip system of each grain and the deformation compatibility factor between the slip systems and twin systems of adjacent grains are determined. The hierarchical polycrystalline deformation coordination mechanism of the nth target crystal is determined based on the number of layers of the nth target crystal, the original morphological image of the nth target crystal, the deformation of the nth target crystal, the strain of each grain in the nth target crystal, the Schmitt factor of the basal slip system of the nth target crystal, and the deformation coordination factor of the nth target crystal.

2. The method of polycrystalline in situ analysis of claim 1, wherein, The step of obtaining the stretched image corresponding to the nth target crystal includes: The second cycle is executed until the strain of the target crystal reaches the preset strain or the tensile force of the target crystal reaches the preset tensile force, and the tensile image of the (M-1)th target crystal is taken as the tensile image corresponding to the nth target crystal. The second cycle process is as follows: The target crystal is subjected to the Mth tensile force value in the target tensile force scheme to cause the target crystal to be stretched and deformed, wherein the Mth tensile force value is less than a preset tensile force value; The stretched image of the target crystal after stretching deformation is updated to the stretched image of the Mth target crystal corresponding to the nth target crystal. The value of M is incremented by 1, and the real-time strain of the target crystal and whether the target crystal after stretching deformation is broken are detected; M is greater than 1.

3. The method of polycrystalline in situ analysis of claim 2, wherein, The step of obtaining the layer number of the nth target crystal is as follows: Electron backscatter diffraction pattern calibration is performed on the nth target crystal; Obtain the orientation information color map of two opposite cross-sections after calibration, wherein the cross-sections are perpendicular to the thickness direction of the target crystal; The number of layers of the target crystal is determined based on the comparison results of the two orientation information color maps.

4. The quasi-in-situ analysis method for polycrystalline materials according to claim 3, characterized in that, When the colors of the two orientation information color maps are the same and / or the color overlap range exceeds the preset ratio range, it is confirmed that the current layer is a single layer. When the two orientation information color maps have different colors and the color overlap range is less than a preset ratio range, the control measuring instrument measures the thickness of the target crystal to obtain the sample thickness. The number of crystal layers of the target crystal is determined based on the thickness.

5. The quasi-in-situ analysis method for polycrystalline materials according to claim 3 or 4, characterized in that, The processing requirements include thickness requirements and corresponding quantity requirements. The step of processing the polycrystalline material according to the processing requirements to obtain N target crystals of different thicknesses includes: When the thickness requirement is a single-layer crystal thickness, the polycrystalline material is processed according to the single-layer crystal thickness processing method to obtain a single-layer target crystal corresponding to the quantity requirement; When the thickness requirement is a double-layer crystal thickness, the polycrystalline material is processed according to the double-layer crystal thickness processing method to obtain the target double-layer crystal corresponding to the quantity requirement; When the thickness requirement is p-layer crystal thickness, the polycrystalline material is processed according to the multi-layer crystal thickness processing method to obtain the target crystal with p layers corresponding to the quantity requirement, where P is greater than or equal to 3.

6. A quasi-in-situ analysis apparatus for polycrystalline materials, characterized in that, For performing the quasi-in-situ analysis method for polycrystalline materials as described in any one of claims 1 to 5, the quasi-in-situ analysis apparatus for polycrystalline materials comprises: The parameter acquisition module is used to obtain the processing requirements of N polycrystalline materials with different thicknesses, where N is greater than or equal to 2. The execution module is used to process the polycrystalline material according to the processing requirements to obtain N target crystals of different thicknesses and to execute the first cycle process until n is greater than N; The first cyclic process is as follows: acquire the original morphology image corresponding to the nth target crystal, where n is greater than or equal to 1; acquire the stretched image corresponding to the nth target crystal; acquire the number of layers of the nth target crystal; for the nth target crystal, perform image analysis based on the number of layers of the nth target crystal, the original morphology image of the nth target crystal, and the stretched image of the nth target crystal to obtain the layered polycrystalline deformation coordination mechanism of the nth target crystal, where n increments by 1; The analysis module is used to obtain the polycrystalline deformation coordination mechanism of the polycrystalline material based on the hierarchical polycrystalline deformation coordination mechanism of the N target crystals.

7. A quasi-in-situ analysis device for polycrystalline materials, characterized in that, include: The processor, memory, communication interface, and communication bus are provided, wherein the processor, memory, and communication interface communicate with each other via the communication bus. The memory is used to store at least one executable instruction that causes the processor to perform the operation of the quasi-in-situ analysis method for polycrystalline materials as described in any one of claims 1-5.

8. A storage medium, characterized in that, The storage medium stores at least one executable instruction, which, when executed on the polycrystalline quasi-in-situ analysis device / apparatus, causes the polycrystalline quasi-in-situ analysis device / apparatus to perform the operation of the polycrystalline quasi-in-situ analysis method as described in any one of claims 1-5.

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