Anti-counterfeiting element, method for producing same, and anti-counterfeiting article

Abstract

The application provides a kind of anti-fake element and its preparation method and anti-fake article, anti-fake element includes: substrate layer;Receiving antenna layer is arranged above substrate layer, including first end point and second end point;Anode layer is connected with first end point;Light-emitting layer is connected with anode layer, light-emitting layer can emit light under energized state;Pattern layer is connected with light-emitting layer, including anti-fake pattern, light-emitting layer is in the state of light emission, and the anti-fake pattern on pattern layer is displayed;Cathode layer is arranged above light-emitting layer, and is connected with second end point;Wherein, receiving antenna layer, anode layer, light-emitting layer, cathode layer form a closed loop;Receiving antenna layer can receive radio wave signal transmitting end to transmit radio wave signal, to make the induced current in closed loop, to make the anti-fake pattern on pattern layer be displayed;Receiving antenna layer can receive the radio wave signal of frequency greater than or equal to 10kHz, and less than or equal to 500kHz, to make the induced current in closed loop.

Description

Technical Field

[0001] This invention relates to the field of anti-counterfeiting technology, and more specifically, to an anti-counterfeiting element, its preparation method, and anti-counterfeiting articles. Background Technology

[0002] Existing anti-counterfeiting elements are usually simple in structure, making them easy for criminals to copy and counterfeit, resulting in poor anti-counterfeiting effect. In addition, existing anti-counterfeiting elements involve a large number of layers and have a large surface area, which makes the overall anti-counterfeiting element area large.

[0003] Therefore, in order to improve the anti-counterfeiting effect, inventing a new type of anti-counterfeiting element is a technical problem that urgently needs to be solved. Summary of the Invention

[0004] The present invention aims to solve or improve at least one of the above-mentioned technical problems.

[0005] The first aspect of the present invention is to provide an anti-counterfeiting element.

[0006] A second aspect of the present invention is to provide a method for preparing an anti-counterfeiting element.

[0007] A third aspect of the present invention is to provide an anti-counterfeiting article.

[0008] The anti-counterfeiting element provided by this invention includes: a substrate layer; a receiving antenna layer disposed above the substrate layer, including a first endpoint and a second endpoint; an anode layer connected to the first endpoint; a light-emitting layer connected to the anode layer, which emits light when energized; a pattern layer connected to the light-emitting layer, including an anti-counterfeiting pattern, which is displayed when the light-emitting layer emits light; and a cathode layer disposed above the light-emitting layer and connected to the second endpoint. The receiving antenna layer, anode layer, light-emitting layer, and cathode layer form a closed loop. The receiving antenna layer can receive radio wave signals emitted by a radio wave signal transmitter, thereby generating an induced current within the closed loop, energizing the light-emitting layer to emit light, and displaying the anti-counterfeiting pattern on the pattern layer. The receiving antenna layer can receive radio wave signals with frequencies greater than or equal to 10 kHz and less than or equal to 500 kHz, thereby generating an induced current within the closed loop.

[0009] In this technical solution, the receiving antenna layer can receive radio wave signals with a frequency greater than or equal to 10kHz and less than or equal to 500kHz, so as to generate an induced current in the closed loop. The frequency of the radio wave signal received by the anti-counterfeiting element of this application is significantly different from the frequency of the radio wave signal received by the current anti-counterfeiting element.

[0010] In some technical solutions, optionally, the receiving antenna layer can receive radio wave signals with a frequency greater than or equal to 50 kHz and less than or equal to 300 kHz, so as to induce a current in the closed loop.

[0011] In some technical solutions, optionally, the receiving antenna layer can receive radio wave signals with a frequency greater than or equal to 100 kHz and less than or equal to 200 kHz, for example, 150 kHz.

[0012] In some technical solutions, optionally, the receiving antenna layer includes a receiving antenna, which is helical in shape.

[0013] In some technical solutions, optionally, the receiving antenna layer is rectangular, with each side having a length greater than or equal to 1 cm and less than or equal to 6 cm. Alternatively, each side of the receiving antenna layer has a length greater than or equal to 2 cm and less than or equal to 4 cm. For example, the receiving antenna layer is square with a side length of 3 cm.

[0014] In some technical solutions, optionally, the number of turns of the receiving antenna is greater than or equal to 5 turns and less than or equal to 50 turns. Alternatively, the number of turns of the receiving antenna is greater than or equal to 10 turns and less than or equal to 20 turns. For example, the number of turns of the receiving antenna is equal to 15 turns.

[0015] In some technical solutions, optionally, the resistance of the receiving antenna is less than 200Ω. Alternatively, the resistance of the receiving antenna is less than 100Ω. For example, the resistance of the receiving antenna is equal to 20Ω.

[0016] In some technical solutions, optionally, the linewidth of the receiving antenna is greater than or equal to 100 μm and less than or equal to 1000 μm. Alternatively, the linewidth of the receiving antenna is greater than or equal to 300 μm and less than or equal to 600 μm. For example, the linewidth of the receiving antenna is 400 μm.

[0017] In some technical solutions, optionally, the line spacing of the receiving antenna is greater than or equal to 10 μm and less than or equal to 100 μm. Alternatively, the line spacing of the receiving antenna is greater than or equal to 30 μm and less than or equal to 60 μm. For example, the line spacing of the receiving antenna is 40 μm.

[0018] In these technical solutions, the present invention improves the receiving antenna structure on the receiving antenna layer, so that the frequency of the radio wave signal received by the anti-counterfeiting element of the present invention is significantly different from the frequency of the radio wave signal received by the current anti-counterfeiting element. Only radio wave signals with frequencies within the corresponding range can emit light, greatly increasing the difficulty for criminals to copy.

[0019] In some technical solutions, optionally, the material of the light-emitting layer is an organic electroluminescent material, and the luminescent current of the organic electroluminescent material is greater than or equal to 0.5 mA / cm². 2 And less than or equal to 100 mA / cm 2 The luminous voltage is greater than or equal to 0.5V and less than or equal to 20V, and the luminous power is greater than or equal to 5mW and less than or equal to 100mW.

[0020] In this technical solution, the material of the light-emitting layer is an organic electroluminescent material, and the luminescent current of the organic electroluminescent material is greater than or equal to 0.5 mA / cm². 2 And less than or equal to 100 mA / cm 2 Optionally, the luminous current is greater than or equal to 1 mA / cm. 2 And less than or equal to 50 mA / cm 2 Optionally, the luminous current is greater than or equal to 5 mA / cm. 2 And less than or equal to 20 mA / cm 2 The luminescent voltage is greater than or equal to 0.5V and less than or equal to 20V; optionally, the luminescent voltage is greater than or equal to 1V and less than or equal to 10V; optionally, the luminescent voltage is greater than or equal to 2V and less than or equal to 4V; the luminescent power is greater than or equal to 5mW and less than or equal to 100mW; optionally, the luminescent power is greater than or equal to 20mW and less than or equal to 50mW; optionally, the luminescent power is 35mW. Thus, when the luminescent current, luminescent voltage, and luminescent power are within the corresponding ranges, the organic electroluminescent material can emit light to generate an anti-counterfeiting pattern. This invention improves the anti-counterfeiting effect and prevents counterfeiting by criminals by limiting the luminescent conditions of the luminescent layer material.

[0021] In some technical solutions, the organic electroluminescent material optionally includes an organic light-emitting material, which includes at least one of the following compounds: polyphenylene vinylidene copolymer, 9,9-didecylfluorene-bis(thiophene)-benzothiadiazole polymer, polyspirofluorene, and polyarylfluorene.

[0022] In some technical solutions, the organic electroluminescent material may optionally include quantum dot luminescent materials.

[0023] That is, organic electroluminescent materials include at least one of organic light-emitting materials and quantum dot light-emitting materials.

[0024] In some technical solutions, optionally, the emission wavelength of the organic electroluminescent material is greater than or equal to 430 nm and less than or equal to 730 nm; optionally, the emission wavelength of the organic electroluminescent material is equal to 600 nm.

[0025] In some technical solutions, optionally, the half-width at half maximum (WHM) of the emission peak of the organic electroluminescent material is less than 100 nm, wherein the WHM of the emission peak is the difference between the two wavelengths corresponding to half of the maximum luminous intensity. Optionally, the WHM of the emission peak of the organic electroluminescent material is less than 50 nm.

[0026] In some technical solutions, optionally, the luminous intensity of the organic electroluminescent material is greater than 100 nits. Optionally, the luminous intensity of the organic electroluminescent material is greater than 1000 nits.

[0027] In these embodiments, by improving the organic electroluminescent material, the luminescent current, luminescent voltage, and luminescent power of the luminescent layer of the anti-counterfeiting element of the present invention are significantly different from those of current luminescent elements. The anti-counterfeiting element can only emit light within the range described in this invention, increasing the difficulty of copying. Furthermore, the half-width at half-maximum (WHM) of the luminescent peak of the luminescent material of the present invention is much smaller than that of conventional luminescent materials. This allows for authenticity verification during subsequent authentication processes, improving the accuracy of authentication. In addition, the luminescence brightness of the luminescent material of the present invention is much greater than that of conventional luminescent materials, reaching a maximum brightness of over 2000 nits. This improves the accuracy of detection during testing, preventing misjudgments due to low brightness.

[0028] In some technical solutions, optionally, the light-emitting layer can emit light when its output power at the radio wave signal transmitting end is greater than or equal to 0.5W and less than or equal to 100W, and its output voltage is greater than or equal to 0.5V and less than or equal to 100V.

[0029] In this technical solution, the output power of the radio wave signal transmitter is greater than or equal to 0.5W and less than or equal to 100W. Optionally, the output power of the radio wave signal transmitter is greater than or equal to 1W and less than or equal to 50W. Optionally, the output power of the radio wave signal transmitter is greater than or equal to 5W and less than or equal to 10W. The output voltage is greater than or equal to 0.5V and less than or equal to 100V. Optionally, the output voltage is greater than or equal to 1V and less than or equal to 50V. Optionally, the output voltage is greater than or equal to 5V and less than or equal to 10V. That is, when the output power and output voltage of the radio wave signal transmitter are within this range, the organic electroluminescent material can emit light, thereby causing the anti-counterfeiting element to generate an anti-counterfeiting pattern.

[0030] In some technical solutions, optionally, the anode layer includes a first light-transmitting layer, through which light emitted by the light-emitting layer can be emitted to make the anti-counterfeiting pattern of the pattern layer visible, and / or the cathode layer includes a second light-transmitting layer, through which light emitted by the light-emitting layer can be emitted to make the anti-counterfeiting pattern of the pattern layer visible.

[0031] In this technical solution, at least one of the anode layer and cathode layer is transparent. The light-emitting layer and pattern layer are disposed between the anode layer and cathode layer. This allows light emitted from the light-emitting layer to be emitted from either the first light-transmitting layer of the anode layer or the second light-transmitting layer of the cathode layer. Light emitted from the first light-transmitting layer of the anode layer allows the anti-counterfeiting pattern to be observed from the lower surface of the anti-counterfeiting element, while light emitted from the second light-transmitting layer of the cathode layer allows the anti-counterfeiting pattern to be observed from the upper surface of the anti-counterfeiting element. By selecting one observation method according to different needs, the concealment is improved. Optionally, the light emitted from the light-emitting layer can be emitted from the first light-transmitting layer of the anode layer, meaning the anti-counterfeiting pattern can be observed from the lower surface of the anti-counterfeiting element. Since most anti-counterfeiting patterns are observed from the upper surface of the anti-counterfeiting element, this application's observation from the lower surface increases the difficulty of copying.

[0032] In some technical solutions, optionally, the receiving distance of the anti-counterfeiting element for receiving radio wave signals is less than or equal to 1 cm.

[0033] In this technical solution, the receiving distance of the anti-counterfeiting element to receive radio wave signals is controlled. That is, when the receiving distance is too far, the radio wave signals cannot be received, so the anti-counterfeiting element cannot emit light. The anti-counterfeiting element will only emit light when the receiving distance is less than or equal to 1cm, thus improving its concealment.

[0034] In some technical solutions, the anode layer is optionally disposed above the receiving antenna layer.

[0035] In some technical solutions, the light-emitting layer is optionally disposed above the anode layer.

[0036] In some technical solutions, the pattern layer is optionally disposed between the light-emitting layer and the receiving antenna layer.

[0037] In these technical solutions, the arrangement of upper and lower layers, compared to placing them all on the same layer, can greatly reduce the surface area of ​​the anti-counterfeiting elements, thereby making the length and width of the anti-counterfeiting elements smaller, making them less likely to be detected by adversaries and improving anti-counterfeiting performance.

[0038] In some technical solutions, the anti-counterfeiting element may optionally include: a barrier layer disposed above the substrate layer, and a receiving antenna layer disposed above the barrier layer; an insulating layer disposed above the receiving antenna layer, including a first hollow area and a second hollow area, the first hollow area being disposed above a first endpoint and the second hollow area being disposed above a second endpoint; an anode layer disposed at the first hollow area and connected to the first endpoint; a bridging layer disposed at the second hollow area and connected to the second endpoint, the luminescent layer not connected to the bridging layer; a cathode layer covering the entire luminescent layer and connected to the bridging layer; and a protective layer connected to the substrate layer and capable of forming a closed area with the substrate layer, wherein the substrate layer, barrier layer, receiving antenna layer, insulating layer, anode layer, bridging layer, luminescent layer, pattern layer, and cathode layer are all disposed within the closed area.

[0039] In this technical solution, the anti-counterfeiting element further includes a barrier layer, an insulating layer, a bridging layer, and a protective layer. The barrier layer is disposed above the substrate layer. The receiving antenna layer is disposed above the barrier layer and includes a first endpoint and a second endpoint. The insulating layer is disposed above the receiving antenna layer and includes a first hollow area and a second hollow area. The first hollow area is disposed above the first endpoint, and the second hollow area is disposed above the second endpoint. The anode layer is disposed at the first hollow area and connected to the first endpoint. The bridging layer is disposed at the second hollow area and connected to the second endpoint. The light-emitting layer is disposed above the anode layer and includes a light-emitting area and a non-light-emitting area. The light-emitting area can emit light to display the anti-counterfeiting pattern when energized. The light-emitting layer is not connected to the bridging layer. The pattern layer is disposed in a portion of the contact surface between the light-emitting layer and the anode layer. The pattern layer also includes a third hollow area. The cathode layer is disposed above the light-emitting layer and covers the entire surface. The light-emitting layer is connected to the bridging layer through a third hollow area. The receiving antenna layer, anode layer, the light-emitting area of ​​the light-emitting layer, cathode layer, and bridging layer are sequentially connected to form a closed loop. The receiving antenna layer can receive radio wave signals emitted by the radio wave signal transmitter, causing an induced current in the closed loop, which in turn powers the light-emitting area of ​​the light-emitting layer to emit light and generate an anti-counterfeiting pattern. The light-emitting principle of the anti-counterfeiting pattern in this application is as follows: by setting the pattern layer on the contact surface between the light-emitting layer and the anode layer, since the anode layer is below the light-emitting layer and the cathode layer is above the light-emitting layer, the current flows from bottom to top. Because the pattern layer separates part of the contact surface between the light-emitting layer and the anode layer, the entire light-emitting layer is divided into two areas: a conductive area and a non-conductive area. The conductive area emits light, while the non-conductive area does not, thus generating the corresponding anti-counterfeiting pattern. The anti-counterfeiting element also includes a protective layer, which is connected to the substrate layer and forms a closed area with it. The barrier layer, receiving antenna layer, insulating layer, anode layer, bridging layer, light-emitting layer, pattern layer, and cathode layer are all located within this closed area, thus protecting the entire anti-counterfeiting element. This application allows for the creation of various anti-counterfeiting patterns through the combined use of the pattern layer and the light-emitting layer, resulting in a stronger anti-counterfeiting effect compared to a single anti-counterfeiting pattern.

[0040] The anti-counterfeiting element provided by this invention arranges its receiving antenna layer, anode layer, bridging layer, light-emitting layer, and cathode layer in an upper and lower layer arrangement, which greatly reduces the surface area of ​​the anti-counterfeiting element compared to placing them all on the same layer. This results in a smaller length and width for the anti-counterfeiting element, making it less likely to be detected by adversaries and improving anti-counterfeiting performance. In addition, the anode layer and bridging layer are formed in one step using the same material and the same process, which reduces the manufacturing difficulty of the anti-counterfeiting element and improves the manufacturing efficiency.

[0041] In some technical solutions, optionally, the substrate layer is a three-layer stacked structure consisting of a molecular polymer layer, an oxide layer, and a molecular polymer layer; the barrier layer is a stacked structure composed of an oxide layer and a nitride layer; the receiving antenna layer is a stacked structure of alternating alloy layers and single metal layers or a single metal layer; the insulating layer is made of nitride; the anode layer and the bridging layer are both single metal layers or stacked structures of alternating metal layers and metal oxide layers, and the anode layer and the bridging layer are fabricated using the same process; the pattern layer is made of molecular polymer material; the light-emitting layer, from bottom to top, includes at least a hole injection layer, a hole transport layer, a light-emitting center layer, an electron transport layer, and an electron injection layer; the cathode layer is made of metallic material or an alloy material; and the protective layer is a composite material of alternating organic and inorganic materials, where the organic material is a polymer material and the inorganic material is a nitride and an oxide material.

[0042] The second aspect of this invention provides a method for preparing an anti-counterfeiting element, applicable to the preparation of the anti-counterfeiting element provided in the first aspect of this invention. The method includes: sputtering a receiving antenna layer material onto a substrate layer using magnetron sputtering to form a receiving antenna layer thin film; sequentially coating photoresist onto the receiving antenna layer thin film; masking the substrate with a pre-processed first mask featuring a spiral coil-shaped perforation pattern; locally curing the photoresist under exposure conditions; and finally forming the receiving antenna layer using an etching process; and sputtering an anode layer material onto a first endpoint region using magnetron sputtering to form an anode layer thin film; and then sequentially coating a receiving antenna layer thin film onto the anode layer thin film. The process involves: applying photoresist, then partially masking the area with a pre-fabricated third mask featuring a perforated pattern, followed by localized curing of the photoresist under exposure, and finally etching to form the anode layer; depositing the material for the light-emitting layer onto the anode layer using vapor deposition to form the light-emitting layer; coating the material for the pattern layer onto the light-emitting layer to form a pattern layer film, followed by applying photoresist, then partially masking the area with a pre-fabricated fourth mask featuring a perforated pattern, followed by localized curing of the photoresist under exposure, and finally etching to form the pattern layer; and depositing the material for the cathode layer onto the light-emitting layer using vapor deposition to form the cathode layer.

[0043] A third aspect of the present invention provides an anti-counterfeiting article, including an article substrate; and an anti-counterfeiting element as provided in any of the technical solutions of the first aspect of the present invention.

[0044] The present invention provides an anti-counterfeiting element and a method for preparing the same, which has the following beneficial effects:

[0045] 1. Compared to placing all layers on the same layer, the receiving antenna layer, anode layer, bridging layer, light-emitting layer, and cathode layer of the anti-counterfeiting element of this invention are arranged in an upper and lower layer manner. This greatly reduces the surface area of ​​the anti-counterfeiting element, thereby making the length and width of the anti-counterfeiting element smaller, making it less likely to be detected by opponents and improving anti-counterfeiting performance.

[0046] 2. The anode layer and the bridging layer are formed in one step using the same materials and the same process, which reduces the difficulty of manufacturing anti-counterfeiting elements and improves manufacturing efficiency.

[0047] 3. This invention can achieve a variety of anti-counterfeiting patterns by combining the pattern layer and the light-emitting layer, which has a stronger anti-counterfeiting effect compared to a single anti-counterfeiting pattern.

[0048] 4. The receiving antenna layer of this application has a specific structure and a specific manufacturing process, which makes the frequency of the received radio wave signal significantly different from the frequency of the radio wave signal received by current anti-counterfeiting elements, thus further improving the anti-counterfeiting effect of this application.

[0049] Additional aspects and advantages of the invention will become apparent in the following description or may be learned by practice of the invention. Attached Figure Description

[0050] The above and / or additional aspects and advantages of embodiments of the present invention will become apparent and readily understood from the description of the embodiments in conjunction with the following drawings, wherein:

[0051] Figure 1 A schematic diagram of the structure of the anti-counterfeiting element provided in an embodiment of the present invention is shown;

[0052] Figure 2 A schematic diagram of the insulating layer of the anti-counterfeiting element provided in an embodiment of the present invention is shown;

[0053] Figure 3 A block diagram of the anode layer of the anti-counterfeiting element provided in an embodiment of the present invention is shown;

[0054] Figure 4 A block diagram of the cathode layer of the anti-counterfeiting element provided in an embodiment of the present invention is shown;

[0055] Figure 5 One of the manufacturing process flowcharts of the anti-counterfeiting element provided by an embodiment of the present invention is shown;

[0056] Figure 6 A second flowchart illustrating the preparation process of the anti-counterfeiting element provided in an embodiment of the present invention is shown;

[0057] Figure 7 A block diagram of an anti-counterfeiting article provided by an embodiment of the present invention is shown.

[0058] in, Figures 1 to 4 and Figure 7 The correspondence between component names and their corresponding numbers is as follows:

[0059] 1 Anti-counterfeiting item, 12 Anti-counterfeiting element, 121 Substrate layer, 122 Barrier layer, 123 Receiving antenna layer, 1232 First endpoint, 1234 Second endpoint, 124 Insulating layer, 1242 First hollow area, 1244 Second hollow area, 125 Anode layer, 1252 First light-transmitting layer, 126 Bridging layer, 127 Pattern layer, 128 Light-emitting layer, 129 Cathode layer, 1292 Second light-transmitting layer, 220 Protective layer, 14 Item substrate. Detailed Implementation

[0060] To better understand the above aspects, features, and advantages of the embodiments of the present invention, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that, unless otherwise specified, the embodiments and features described in these embodiments can be combined with each other.

[0061] Numerous specific details are set forth in the following description in order to provide a full understanding of embodiments of the invention. However, embodiments of the invention may also be implemented in other ways different from those described herein. Therefore, the scope of protection of embodiments of the invention is not limited to the specific embodiments disclosed below.

[0062] like Figure 1As shown, the anti-counterfeiting element 12 provided in this embodiment includes a substrate layer 121, a receiving antenna layer 123, an anode layer 125, a light-emitting layer 128, a pattern layer 127, and a cathode layer 129. The receiving antenna layer 123 is disposed above the substrate layer 121 and includes a first endpoint 1232 and a second endpoint 1234. The anode layer 125 is connected to the first endpoint 1232 and is disposed above the receiving antenna layer 123. The light-emitting layer 128 is connected to the anode layer 125 and is disposed above the anode layer 125. The light-emitting layer 128 can emit light when energized. The pattern layer 127 is connected to the light-emitting layer 128 and is located between the light-emitting layer 128 and the insulating layer 124. The pattern layer 127 includes an anti-counterfeiting pattern and emits light. When layer 128 is illuminated, the anti-counterfeiting pattern on pattern layer 127 is displayed; cathode layer 129 is disposed above luminescent layer 128 and connected to second endpoint 1234; receiving antenna layer 123, anode layer 125, luminescent layer 128 and cathode layer 129 form a closed loop; receiving antenna layer 123 can receive radio wave signals emitted by radio wave signal transmitter, so as to generate an induced current in the closed loop, so as to energize luminescent layer 128 and make it light up, so as to display the anti-counterfeiting pattern on pattern layer 127; receiving antenna layer 123 can receive radio wave signals with a frequency greater than or equal to 10kHz and less than or equal to 500kHz, so as to generate an induced current in the closed loop.

[0063] In this embodiment, the receiving antenna layer 123 can receive radio wave signals with a frequency greater than or equal to 10kHz and less than or equal to 500kHz, so as to generate an induced current in the closed loop. The frequency of the radio wave signal received by the anti-counterfeiting element 12 of this application is significantly different from the frequency of the radio wave signal received by the current anti-counterfeiting element 12, which further improves the anti-counterfeiting effect of this application.

[0064] In some embodiments, the receiving antenna layer 123 may optionally receive radio wave signals with a frequency greater than or equal to 50 kHz and less than or equal to 300 kHz, so as to induce a current in the closed loop.

[0065] In some embodiments, the receiving antenna layer 123 may optionally receive radio wave signals with frequencies greater than or equal to 100 kHz and less than or equal to 200 kHz, for example, 150 kHz. In some embodiments, the receiving antenna layer 123 may optionally include a receiving antenna in a helical shape.

[0066] In some embodiments, the receiving antenna layer 123 may optionally be rectangular, with each side of the receiving antenna layer 123 having a length greater than or equal to 1 cm and less than or equal to 6 cm. Alternatively, the length of each side of the receiving antenna layer 123 may be greater than or equal to 2 cm and less than or equal to 4 cm. For example, the receiving antenna layer 123 may be square with a side length of 3 cm.

[0067] In some embodiments, the receiving antenna may optionally have 5 or more turns and 50 or less. Alternatively, the receiving antenna may have 10 or more turns and 20 or less. For example, the receiving antenna may have 15 turns.

[0068] In some embodiments, the resistance of the receiving antenna is optionally less than 200Ω. Alternatively, the resistance of the receiving antenna is less than 100Ω. For example, the resistance of the receiving antenna is equal to 20Ω.

[0069] In some embodiments, optionally, the linewidth of the receiving antenna is greater than or equal to 100 μm and less than or equal to 1000 μm. Optionally, the linewidth of the receiving antenna is greater than or equal to 300 μm and less than or equal to 600 μm. For example, the linewidth of the receiving antenna is 400 μm.

[0070] In some embodiments, optionally, the line spacing of the receiving antenna is greater than or equal to 10 μm and less than or equal to 100 μm. Optionally, the line spacing of the receiving antenna is greater than or equal to 30 μm and less than or equal to 60 μm. For example, the line spacing of the receiving antenna is 40 μm.

[0071] In these embodiments, the present invention improves the receiving antenna structure on the receiving antenna layer 123, so that the frequency of the radio wave signal received by the anti-counterfeiting element 12 of the present invention is significantly different from the frequency of the radio wave signal received by the current anti-counterfeiting element 12. Only radio wave signals with frequencies within the corresponding range can emit light, greatly increasing the difficulty for criminals to copy.

[0072] In some embodiments, the material of the light-emitting layer 128 is optionally an organic electroluminescent material, and the luminescent current of the organic electroluminescent material is greater than or equal to 0.5 mA / cm². 2 And less than or equal to 100 mA / cm 2 The luminous voltage is greater than or equal to 0.5V and less than or equal to 20V, and the luminous power is greater than or equal to 5mW and less than or equal to 100mW.

[0073] In this embodiment, the material of the light-emitting layer 128 is an organic electroluminescent material, and the luminescent current of the organic electroluminescent material is greater than or equal to 0.5 mA / cm². 2 And less than or equal to 100 mA / cm 2 Optionally, the luminous current is greater than or equal to 1 mA / cm. 2 And less than or equal to 50 mA / cm 2 Optionally, greater than or equal to 5 mA / cm 2 And less than or equal to 20 mA / cm 2The luminescent voltage is greater than or equal to 0.5V and less than or equal to 20V; optionally, the luminescent voltage is greater than or equal to 1V and less than or equal to 10V; optionally, the luminescent voltage is greater than or equal to 2V and less than or equal to 4V; the luminescent power is greater than or equal to 5mW and less than or equal to 100mW; optionally, the luminescent power is greater than or equal to 20mW and less than or equal to 50mW; optionally, the luminescent power is 35mW. Thus, when the luminescent current, luminescent voltage, and luminescent power are within the corresponding ranges, the organic electroluminescent material can emit light to generate an anti-counterfeiting pattern. This invention improves the anti-counterfeiting effect and prevents counterfeiting by criminals by limiting the luminescent conditions of the luminescent layer 128 material.

[0074] In some embodiments, the organic electroluminescent material may optionally include an organic light-emitting material, which includes at least one of the following compounds: polyphenylene vinylidene copolymer, 9,9-didecylfluorene-bis(thiophene)-benzothiadiazole polymer, polyspirofluorene, and polyarylfluorene.

[0075] In some embodiments, the organic electroluminescent material may optionally include quantum dot luminescent materials.

[0076] That is, organic electroluminescent materials include at least one of organic light-emitting materials and quantum dot light-emitting materials.

[0077] In some embodiments, the emission wavelength of the organic electroluminescent material is optionally greater than or equal to 430 nm and less than or equal to 730 nm; alternatively, the emission wavelength of the organic electroluminescent material is equal to 600 nm.

[0078] In some embodiments, optionally, the half-width at half maximum (WHM) of the emission peak of the organic electroluminescent material is less than 100 nm, wherein the WHM of the emission peak is the difference between the two wavelengths corresponding to half of the maximum luminous intensity; optionally, the WHM of the emission peak of the organic electroluminescent material is less than 50 nm.

[0079] In some embodiments, the luminescence intensity of the organic electroluminescent material is optionally greater than 100 nits. Alternatively, the luminescence intensity of the organic electroluminescent material is optionally greater than 1000 nits.

[0080] In these embodiments, by improving the organic electroluminescent material, the luminescent current, luminescent voltage, and luminescent power of the luminescent layer of the anti-counterfeiting element of the present invention are significantly different from those of current luminescent elements. The anti-counterfeiting element can only emit light within the range described in this invention, increasing the difficulty of copying. Furthermore, the half-width at half-maximum (WHM) of the luminescent peak of the luminescent material of the present invention is much smaller than that of conventional luminescent materials. This allows for authenticity verification during subsequent authentication processes, improving the accuracy of authentication. In addition, the luminescence brightness of the luminescent material of the present invention is much greater than that of conventional luminescent materials, reaching a maximum brightness of over 2000 nits. This improves the accuracy of detection during testing, preventing misjudgments due to low brightness.

[0081] In some embodiments, optionally, the light-emitting layer 128 can emit light when its output power at the radio wave signal transmitting end is greater than or equal to 0.5W and less than or equal to 100W, and its output voltage is greater than or equal to 0.5V and less than or equal to 100V.

[0082] In this embodiment, the output power of the radio wave signal transmitter is greater than or equal to 0.5W and less than or equal to 100W. Optionally, the output power of the radio wave signal transmitter is greater than or equal to 1W and less than or equal to 50W. Optionally, the output power of the radio wave signal transmitter is greater than or equal to 5W and less than or equal to 10W. The output voltage is greater than or equal to 0.5V and less than or equal to 100V. Optionally, the output voltage is greater than or equal to 1V and less than or equal to 50V. Optionally, the output voltage is greater than or equal to 5V and less than or equal to 10V. That is, when the output power and output voltage of the radio wave signal transmitter are within this range, the organic electroluminescent material can emit light, thereby causing the anti-counterfeiting element 12 to generate an anti-counterfeiting pattern.

[0083] In some embodiments, optionally, such as Figure 3 and Figure 4 As shown, the anode layer 125 includes a first light-transmitting layer 1252, through which light emitted from the light-emitting layer 128 can be emitted to make the anti-counterfeiting pattern of the pattern layer 127 visible, and / or the cathode layer 129 includes a second light-transmitting layer 1292, through which light emitted from the light-emitting layer 128 can be emitted to make the anti-counterfeiting pattern of the pattern layer 127 visible.

[0084] In this embodiment, at least one of the anode layer 125 and the cathode layer 129 is transparent. The light-emitting layer 128 and the pattern layer 127 are disposed between the anode layer 125 and the cathode layer 129. This allows light emitted from the light-emitting layer 128 to be emitted from either the first light-transmitting layer 1252 of the anode layer 125 or the second light-transmitting layer 1292 of the cathode layer 129. Emission from the first light-transmitting layer 1252 of the anode layer 125 allows the anti-counterfeiting pattern to be observed from the lower surface of the anti-counterfeiting element, while emission from the second light-transmitting layer 1292 of the cathode layer 129 allows the anti-counterfeiting pattern to be observed from the upper surface of the anti-counterfeiting element. By selecting one observation method according to different needs, the concealment is improved. Optionally, the light emitted from the light-emitting layer 128 can be emitted from the first light-transmitting layer 1252 of the anode layer 125, meaning the anti-counterfeiting pattern can be observed from the lower surface of the anti-counterfeiting element. Since most anti-counterfeiting patterns are observed from the upper surface of the anti-counterfeiting element, this application's observation from the lower surface increases the difficulty of copying.

[0085] In some embodiments, the anti-counterfeiting element 12 may optionally receive radio wave signals emitted by the radio wave signal transmitter at a distance of less than or equal to 1 cm.

[0086] In this embodiment, the receiving distance of the anti-counterfeiting element 12 to receive the radio wave signal emitted by the radio wave signal transmitter is controlled. That is, when the receiving distance is too far, the radio wave signal cannot be received, so the anti-counterfeiting element 12 cannot emit light. The anti-counterfeiting element 12 will only emit light when the receiving distance is less than or equal to 1 cm, thus improving its concealment.

[0087] In some embodiments, the anode layer 125 is optionally disposed above the receiving antenna layer 123.

[0088] In some embodiments, the light-emitting layer 128 is optionally disposed above the anode layer 125.

[0089] In some embodiments, the pattern layer 127 is optionally disposed between the light-emitting layer 128 and the receiving antenna layer 123.

[0090] In these embodiments, the arrangement of the anti-counterfeiting elements in upper and lower layers, compared to placing them all on the same layer, can greatly reduce the surface area of ​​the anti-counterfeiting elements, thereby making the length and width of the anti-counterfeiting elements smaller, making them less likely to be detected by adversaries and improving anti-counterfeiting performance.

[0091] like Figure 1 and Figure 2As shown, in some embodiments, optionally, the anti-counterfeiting element 12 further includes: a barrier layer 122 disposed above the substrate layer 121, and a receiving antenna layer 123 disposed above the barrier layer 122; an insulating layer 124 disposed above the receiving antenna layer 123, including a first hollow area 1242 and a second hollow area 1244, the first hollow area 1242 being disposed above the first endpoint 1232, and the second hollow area 1244 being disposed above the second endpoint 1234; and an anode layer 125 disposed at the first hollow area 1242, connected to the first endpoint 1232, and located above the receiving antenna layer 123. A bridging layer 126 is disposed at the second hollow area 1244 and connected to the second endpoint 1234, and is located above the receiving antenna layer 123; the light-emitting layer 128 is not connected to the bridging layer 126; the cathode layer 129 covers the entire light-emitting layer 128 and is connected to the bridging layer 126; the protective layer 220 is connected to the substrate layer 121 and can form a closed area with the substrate layer 121; the substrate layer 121, the barrier layer 122, the receiving antenna layer 123, the insulating layer 124, the anode layer 125, the bridging layer 126, the light-emitting layer 128, the pattern layer 127, and the cathode layer 129 are all disposed within the closed area.

[0092] In this embodiment, the anti-counterfeiting element 12 further includes a barrier layer 122, an insulating layer 124, a bridging layer 126, and a protective layer 220. The barrier layer 122 is disposed above the substrate layer 121. The receiving antenna layer 123 is disposed above the barrier layer 122 and includes a first endpoint 1232 and a second endpoint 1234. The insulating layer 124 is disposed above the receiving antenna layer 123 and includes a first hollow area 1242 and a second hollow area 1244. The first hollow area 1242 is disposed above the first endpoint 1232, and the second hollow area 1244 is disposed above the second endpoint 1232. Above 234; the anode layer 125 is disposed at the first hollow area 1242 and connected to the first endpoint 1232; the bridging layer 126 is disposed at the second hollow area 1244 and connected to the second endpoint 1234; the light-emitting layer 128 is disposed above the anode layer 125, including a light-emitting area and a non-light-emitting area, the light-emitting area can emit light to display an anti-counterfeiting pattern when energized, and the light-emitting layer 128 is not connected to the bridging layer 126; the pattern layer 127 is disposed in a portion of the contact surface between the light-emitting layer 128 and the anode layer 125; the pattern layer 127 also includes a third hollow area. In the empty area, the cathode layer 129 is disposed above the light-emitting layer 128 and covers the entire light-emitting layer 128, and is connected to the bridging layer 126 through the third hollow area; wherein, the receiving antenna layer 123, the anode layer 125, the light-emitting area of ​​the light-emitting layer 128, the cathode layer 129, and the bridging layer 126 are sequentially connected to form a closed loop; the receiving antenna layer 123 can receive the radio wave signal emitted by the radio wave signal transmitter, so as to generate an induced current in the closed loop, so as to energize the light-emitting area of ​​the light-emitting layer 128 to emit light and generate an anti-counterfeiting pattern; the anti-counterfeiting pattern of this application The light-emitting principle is as follows: by placing the pattern layer 127 on the contact surface between the light-emitting layer 128 and the anode layer 125, and since the anode layer 125 is below the light-emitting layer 128 and the cathode layer 129 is above the light-emitting layer 128, the current flows from bottom to top. Because the pattern layer 127 separates part of the contact surface between the light-emitting layer 128 and the anode layer 125, the entire light-emitting layer 128 is divided into two areas: a conductive area and a non-conductive area. The conductive area emits light, while the non-conductive area does not, thus generating the corresponding anti-counterfeiting pattern. The anti-counterfeiting element 12 also includes a protective layer 220, which is connected to the substrate layer 121 and can form a closed area with the substrate layer 121. The barrier layer 122, the receiving antenna layer 123, the insulating layer 124, the anode layer 125, the bridging layer 126, the light-emitting layer 128, the pattern layer 127, and the cathode layer 129 are all placed within the closed area, thus protecting the entire anti-counterfeiting element 12 through the protective layer 220. This application can achieve a variety of anti-counterfeiting patterns by using pattern layer 127 and light-emitting layer 128 together, which has a stronger anti-counterfeiting effect compared to a single anti-counterfeiting pattern.

[0093] The anti-counterfeiting element 12 provided by the present invention has an upper and lower layer arrangement of the receiving antenna layer 123, anode layer 125, bridging layer 126, light-emitting layer 128 and cathode layer 129, which greatly reduces the surface area of ​​the anti-counterfeiting element 12 compared to placing them all on the same layer. This results in a smaller length and width of the anti-counterfeiting element 12, making it less likely to be detected by adversaries and improving anti-counterfeiting performance. In addition, the anode layer 125 and bridging layer 126 are formed in one piece using the same material and the same process, which reduces the difficulty of manufacturing the anti-counterfeiting element 12 and improves the manufacturing efficiency.

[0094] In some embodiments, optionally, the substrate layer 121 is a three-layer stacked structure consisting of a polymer layer, an oxide layer, and a polymer layer; the barrier layer 122 is a stacked structure consisting of an oxide layer and a nitride layer; the receiving antenna layer 123 is a stacked structure consisting of alternating alloy layers and single metal layers or a single metal layer; the insulating layer 124 is made of nitride; the anode layer 125 and the bridging layer 126 are both single metal layers or stacked structures consisting of alternating metal layers and metal oxide layers, and the anode layer 125 and the bridging layer 126 are fabricated using the same process; the patterned layer 127 is made of polymer material; the light-emitting layer 128 includes at least a hole injection layer, a hole transport layer, a light-emitting center layer, an electron transport layer, and an electron injection layer from bottom to top; the cathode layer 129 is made of metal material or alloy material; and the protective layer 220 is a composite material consisting of alternating organic and inorganic materials, wherein the organic material is a polymer material and the inorganic material is a nitride and an oxide material.

[0095] like Figure 5 As shown, this embodiment provides a method for preparing an anti-counterfeiting element, applied to the preparation of the anti-counterfeiting element provided in the first aspect embodiment of the present invention. The method for preparing the anti-counterfeiting element includes:

[0096] S102: Fabrication of the receiving antenna layer;

[0097] Specifically: The material of the receiving antenna layer is sputtered onto the substrate layer using magnetron sputtering to form a thin film of the receiving antenna layer. Then, photoresist is sequentially coated on the thin film of the receiving antenna layer. A mask with a pre-processed spiral coil-shaped hollow pattern is then used to block the photoresist. The photoresist is then locally cured under exposure. Finally, the receiving antenna layer is formed by etching.

[0098] S104: Preparation of the anode layer;

[0099] Specifically: the anode layer material is sputtered onto the first endpoint region using magnetron sputtering to form an anode layer film. Then, photoresist is applied sequentially on top of the anode layer film. A pre-processed mask with a hollowed-out pattern is used for partial masking. The photoresist is then locally cured under exposure. Finally, an etching process is used to form the anode layer.

[0100] S106: Fabrication of the light-emitting layer;

[0101] Specifically: The material of the light-emitting layer is deposited on top of the anode layer using a vapor deposition process to form the light-emitting layer;

[0102] S108: Prepare the patterned layer;

[0103] Specifically: The pattern layer material is coated onto the light-emitting layer using a coating process to form a pattern layer film. Then, photoresist is applied sequentially. A pre-processed mask with a hollowed-out pattern is used for partial masking. The photoresist is then partially cured under exposure. Finally, an etching process is used to form the pattern layer.

[0104] S110: Fabrication of the cathode layer;

[0105] Specifically: The cathode layer is formed by depositing the cathode material on top of the light-emitting layer using a vapor deposition process;

[0106] like Figure 6 As shown in this embodiment, another method for preparing an anti-counterfeiting element is provided. The method for preparing the anti-counterfeiting element includes:

[0107] S202: Prepare the barrier layer;

[0108] Specifically, a barrier layer is adsorbed onto the substrate layer using a chemical vapor deposition method.

[0109] S204: Fabrication of the receiving antenna layer;

[0110] Specifically, magnetron sputtering will be used to sputter the material of the receiving antenna layer onto the barrier layer to form a thin film of the receiving antenna layer. Then, photoresist will be applied to the thin film of the receiving antenna layer in sequence. Then, a mask with a pre-processed spiral coil-shaped hollow pattern will be used for masking. Then, the photoresist will be locally cured under exposure. Finally, the receiving antenna layer will be formed by etching process.

[0111] S206: Preparation of the insulating layer;

[0112] Specifically, the insulating material is adsorbed onto the receiving antenna layer using chemical vapor deposition to form an insulating film. Then, photoresist is applied sequentially on the insulating film. A pre-processed mask with a hollow pattern is used for partial masking. The photoresist is then partially cured under exposure. Finally, an etching process is used to form the insulating layer.

[0113] S208: Fabrication of the anode layer and bridging layer;

[0114] Specifically, magnetron sputtering is used to sputter the materials of the anode layer and the bridging layer onto the first and second cutout areas to form anode layer films and bridging layer films. Then, photoresist is sequentially coated on the anode layer films and bridging layer films. A pre-processed mask with a cutout pattern is used for partial masking. The photoresist is then locally cured under exposure. Finally, an etching process is used to form the anode layer and the bridging layer.

[0115] S210: Prepare the patterned layer;

[0116] Specifically, a coating process is used to coat the pattern layer material onto the insulating layer to form a pattern layer film. Then, photoresist is applied sequentially, followed by partial masking using a pre-processed mask with a hollowed-out pattern. The photoresist is then partially cured under exposure conditions, and finally, an etching process is used to form the pattern layer.

[0117] S212: Fabrication of the light-emitting layer;

[0118] Specifically, the luminescent layer is formed by depositing the material of the luminescent layer on top of the anode layer and the pattern layer using a vapor deposition process;

[0119] S214: Fabrication of the cathode layer;

[0120] Specifically, the cathode layer is formed by depositing the cathode material on top of the light-emitting layer and the bridging layer using a vapor deposition process;

[0121] S216: Prepare a protective layer;

[0122] Specifically, the protective layer is placed on the top and outermost part of the anti-counterfeiting element; the protective layer is a laminate of alternating organic and inorganic materials, the organic material is a polymer material, which is realized by inkjet printing, and the inorganic material is a nitride and oxide material, which is realized by chemical vapor deposition.

[0123] Optionally, the photomasks used in this invention are composed of a quartz substrate and a metal plating layer on the quartz substrate, and the hollow pattern on the photomask is formed by laser scanning photolithography.

[0124] like Figure 7 As shown, a third aspect of the present invention provides an anti-counterfeiting article 1, including an article substrate 14; and an anti-counterfeiting element 12 as provided in any embodiment of the first aspect of the present invention.

[0125] In embodiments of the present invention, the terms "first," "second," and "third" are used only for descriptive purposes and should not be construed as indicating or implying relative importance; the term "multiple" refers to two or more unless otherwise expressly defined. The terms "install," "connect," "link," and "fix" should be interpreted broadly. For example, "connect" can be a fixed connection, a detachable connection, or an integral connection; "link" can be a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in embodiments of the present invention according to the specific circumstances.

[0126] Furthermore, although the operations are described in a specific order, this should be understood as requiring that such operations be performed in a specific order or sequential order, or requiring that all illustrated operations be performed to achieve the desired result. In certain environments, multitasking and parallel processing may be advantageous. Similarly, although several specific implementation details are included in the above discussion, these should not be construed as limiting the scope of the invention. Certain features described in the context of individual embodiments may also be implemented in combination in a single implementation. Conversely, various features described in the context of a single implementation may also be implemented individually or in any suitable sub-combination in multiple implementations.

[0127] Although the subject matter has been described using language describing specific structural features and / or methodological logic, it should be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or actions described above. Rather, the specific features and actions described above are merely illustrative examples of implementing the claims.

[0128] The above are merely preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Those skilled in the art will recognize that various modifications and variations are possible with respect to the embodiments of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of the present invention should be included within the protection scope of the embodiments of the present invention.

Claims

1. An anti-counterfeiting element, characterized in that, include: Substrate layer; A receiving antenna layer is disposed above the substrate layer, including a first endpoint and a second endpoint; The anode layer is connected to the first endpoint; A light-emitting layer is connected to the anode layer, and the light-emitting layer can emit light when energized; A pattern layer is disposed in a portion of the contact surface between the luminescent layer and the anode layer, and is connected to the luminescent layer. The pattern layer includes an anti-counterfeiting pattern. The pattern layer separates a portion of the contact surface between the luminescent layer and the anode layer, so that the luminescent layer forms conductive and non-conductive areas. When the luminescent layer is luminescent, the conductive areas emit light, and the anti-counterfeiting pattern on the pattern layer is displayed. A cathode layer is disposed above the light-emitting layer and connected to the second endpoint; A barrier layer is disposed above the substrate layer, and the receiving antenna layer is disposed above the barrier layer; An insulating layer is disposed above the receiving antenna layer, including a first cutout area and a second cutout area. The first cutout area is disposed above the first endpoint, and the second cutout area is disposed above the second endpoint. The anode layer is disposed at the first cutout area and connected to the first endpoint. A bridging layer is disposed at the second hollow area and connected to the second endpoint; the light-emitting layer is not connected to the bridging layer. The pattern layer also includes a third cutout area; The cathode layer covers the entire light-emitting layer and is connected to the bridging layer through the third hollow area; A protective layer is connected to the substrate layer and can form a closed area with the substrate layer. The substrate layer, the barrier layer, the receiving antenna layer, the insulating layer, the anode layer, the bridging layer, the light-emitting layer, the pattern layer, and the cathode layer are all disposed within the closed area. The receiving antenna layer, the anode layer, the light-emitting layer, the cathode layer, and the bridging layer are sequentially connected to form a closed loop. The receiving antenna layer can receive radio wave signals emitted by the radio wave signal transmitter, thereby generating an induced current in the closed loop, which in turn powers the light-emitting layer to emit light, thus displaying the anti-counterfeiting pattern on the pattern layer. The receiving antenna layer is capable of receiving radio wave signals with a frequency greater than or equal to 10 kHz and less than or equal to 500 kHz, so as to generate the induced current in the closed loop.

2. The anti-counterfeiting element according to claim 1, characterized in that, The receiving antenna layer is capable of receiving radio wave signals with frequencies greater than or equal to 50 kHz and less than or equal to 300 kHz, so as to generate the induced current in the closed loop.

3. The anti-counterfeiting element according to claim 1, characterized in that, The receiving antenna layer includes a receiving antenna. The receiving antenna is spiral-shaped; and / or The receiving antenna layer is rectangular, and the length of each side of the receiving antenna layer is greater than or equal to 1 cm and less than or equal to 6 cm; and / or The receiving antenna has 5 or more turns and 50 or less; and / or The resistance of the receiving antenna is less than 200Ω; and / or The linewidth of the receiving antenna is greater than or equal to 100 μm and less than or equal to 1000 μm; and / or The line spacing of the receiving antenna is greater than or equal to 10 μm and less than or equal to 100 μm.

4. The anti-counterfeiting element according to claim 1, characterized in that, The material of the light-emitting layer is an organic electroluminescent material, and the luminescent current of the organic electroluminescent material is greater than or equal to 0.5 mA / cm². 2 And less than or equal to 100 mA / cm 2 The luminous voltage is greater than or equal to 0.5V and less than or equal to 20V, and the luminous power is greater than or equal to 5mW and less than or equal to 100mW.

5. The anti-counterfeiting element according to claim 4, characterized in that, The organic electroluminescent material includes an organic light-emitting material, which comprises at least one of the following compounds: polyphenylene vinylidene copolymer, 9,9-decylfluorene-bis(thiophene)-benzothiadiazole polymer, polyspirofluorene, polyarylfluorene; and / or The organic electroluminescent material includes quantum dot luminescent materials; and / or The emission wavelength of the organic electroluminescent material is greater than or equal to 430 nm and less than or equal to 730 nm; and / or The organic electroluminescent material has a half-width at half-maximum (WHM) of less than 100 nm, wherein the WHM of the emission peak is the difference between the two wavelengths corresponding to half of the maximum luminescence intensity; and / or The luminescence intensity of the organic electroluminescent material is greater than 100 nits.

6. The anti-counterfeiting element according to claim 1, characterized in that, The light-emitting layer can emit light when its output power at the radio wave signal transmitting end is greater than or equal to 0.5W and less than or equal to 100W, and its output voltage is greater than or equal to 0.5V and less than or equal to 100V.

7. The anti-counterfeiting element according to claim 1, characterized in that, The anode layer includes a first light-transmitting layer, through which light emitted by the luminescent layer can be emitted to make the anti-counterfeiting pattern of the pattern layer visible, and / or the cathode layer includes a second light-transmitting layer, through which light emitted by the luminescent layer can be emitted to make the anti-counterfeiting pattern of the pattern layer visible.

8. The anti-counterfeiting element according to claim 1, characterized in that, The anti-counterfeiting element receives radio wave signals at a distance of less than or equal to 1 cm; and / or The anode layer is disposed above the receiving antenna layer; and / or The light-emitting layer is disposed above the anode layer; and / or The pattern layer is disposed between the light-emitting layer and the receiving antenna layer.

9. The anti-counterfeiting element according to claim 1, characterized in that, The substrate layer is a three-layer stacked structure consisting of a molecular polymer layer, an oxide layer, and a molecular polymer layer. The barrier layer is a stacked structure composed of an oxide layer and a nitride layer; The receiving antenna layer is a stack of alternating alloy layers and single metal layers or a single metal layer; The insulating layer is made of a nitride. Both the anode layer and the bridging layer are single metal layers or stacks of alternating metal layers and metal oxide layers, and the anode layer and the bridging layer are prepared using the same process. The patterned layer is made of a molecular polymer material; The light-emitting layer, from bottom to top, includes at least a hole injection layer, a hole transport layer, a light-emitting center layer, an electron transport layer, and an electron injection layer; The cathode layer is made of a metallic material or an alloy material; The protective layer is a composite material consisting of alternating layers of organic and inorganic materials, wherein the organic material is a polymer material and the inorganic material is a nitride and an oxide material.

10. A method for preparing an anti-counterfeiting element, characterized in that, Applied to the preparation of anti-counterfeiting elements as described in any one of claims 1 to 9, the method for preparing the anti-counterfeiting element includes: The material of the receiving antenna layer is sputtered onto the substrate layer using magnetron sputtering to form a thin film of the receiving antenna layer. Then, photoresist is sequentially coated on the thin film of the receiving antenna layer. A first mask with a pre-processed spiral coil-shaped hollow pattern is used for masking. The photoresist is then locally cured under exposure. Finally, the receiving antenna layer is formed by etching. The material of the anode layer is sputtered onto the first endpoint region using magnetron sputtering to form an anode layer film. Then, photoresist is applied sequentially on top of the anode layer film. A third mask with a pre-processed hollow pattern is used for partial masking. The photoresist is then partially cured under exposure. Finally, the anode layer is formed using an etching process. The material of the light-emitting layer is deposited on top of the anode layer using a vapor deposition process to form the light-emitting layer; The pattern layer material is coated onto the light-emitting layer using a coating process to form a pattern layer film. Then, photoresist is applied sequentially. A pre-processed fourth mask with a hollowed-out pattern is used for partial masking. The photoresist is then partially cured under exposure. Finally, the pattern layer is formed using an etching process. The cathode layer is formed by depositing the material of the cathode layer on top of the light-emitting layer using a vapor deposition process.

11. An anti-counterfeiting product, characterized in that, include: Item base material; The anti-counterfeiting element as described in any one of claims 1 to 9.

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