Memory and storage systems

Abstract

The embodiment of the present disclosure provides a memory and a storage system, the memory comprises: a substrate; a control circuit layer located in the substrate; the control circuit layer comprises part of the control circuit of the memory; at least two storage structure layers are sequentially stacked on the control circuit layer in a first direction; the first direction is perpendicular to the surface of the substrate; the storage structure layer is connected with the control circuit layer; the storage structure layer comprises: array-arranged storage units; the storage unit comprises a storage structure and at least two series-connected selection transistors connected with the storage structure; the at least two series-connected selection transistors are arranged in a stacked mode in the first direction; the channel structure of the selection transistor comprises at least one nanosheet; the at least two series-connected selection transistors share one gate structure.

Images