Radio frequency device, method for preparing nano gate, and method for manufacturing radio frequency device

The gate cap pattern is defined by I-line lithography and the extremely short gate of GaN HEMT radio frequency devices is prepared by deposition-etching process, solving the problem of process difficulty and low efficiency caused by relying on electron beam lithography in the prior art, achieving a more efficient preparation process and better compatibility.

CN117878145BActive Publication Date: 2025-03-21SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Patent Information

Application Number
CN202410084715.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-01-19
Publication Date
2025-03-21
Estimated Expiration
2044-01-19

AI Technical Summary

Technical Problem

In the prior art, the nanogate preparation process of GaN HEMT radio frequency devices relies on electron beam lithography, resulting in high process difficulty, low efficiency, poor compatibility, and relying on foreign equipment and glues.

Method used

I-line lithography is used to define the gate cap pattern, and an extremely short gate electrode is prepared through deposition-etching to form a support layer and an Γ-type gate structure. It does not require electron beam lithography technology at all and is suitable for domestic equipment.

Benefits of technology

The requirements for equipment for gate structure preparation are reduced, the preparation efficiency is improved, and it is suitable for mass production, and the problem of poor process compatibility in the prior art is solved.

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Abstract

The present invention discloses a method for preparing a radio frequency device, a nano gate and a method for manufacturing a radio frequency device. The radio frequency device includes an epitaxial structure and a source, a drain, a support layer and a gate matched with the epitaxial structure, the gate is arranged between the source and the drain along the second direction, the support layer is stacked on the epitaxial structure along the first direction, the gate includes a gate cap and a gate root, the gate cap is stacked on the support layer along the first direction, the gate root is arranged on the epitaxial structure and on one side of the support layer along the second direction, the gate root is also connected to the gate cap and forms a Γ-shaped structure, and the first direction is perpendicular to the second direction. The present invention reduces the requirements for equipment in the preparation of the gate structure, and prepares an extremely short gate by deposition-etching, and does not require electron beam lithography technology at all, and domestic equipment can meet production needs.
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