Light emitting device and light emitting device forming substrate

Abstract

A light emitting device includes a plurality of pixels arranged in a matrix in a first direction and a second direction intersecting the first direction, each of the plurality of pixels includes a substrate, a conductive orientation layer over the substrate, a first nitride semiconductor layer over the conductive orientation layer, a second nitride semiconductor layer including a light emitting layer over the first nitride semiconductor layer, and an electrode layer over the second nitride semiconductor layer, the first nitride semiconductor layer and the second nitride semiconductor layer are provided in an island shape, and the substrate is provided in a manner common to the plurality of pixels arranged in a matrix.

Description

Technical Field

[0001] One embodiment of the present invention relates to a light-emitting device comprising a nitride semiconductor. Another embodiment of the present invention relates to a light-emitting device forming substrate having a plurality of light-emitting devices comprising nitride semiconductors formed thereon. Background Technology

[0002] Gallium nitride (GaN), a nitride semiconductor, exhibits the characteristics of a direct transition semiconductor with a large band gap. Light-emitting diodes (LEDs) utilizing these characteristics and employing GaN films have been put into practical use. The GaN film for LEDs is typically deposited on a sapphire substrate using MOCVD (Metal Organic Chemical Vapor Deposition) or HVPE (Hydride Vapor Phase Epitaxy) at high temperatures ranging from 800°C to 1000°C.

[0003] However, in recent years, as a next-generation display device, so-called micro-LED display devices or Mini LED display devices, in which tiny LED chips are mounted within pixels on a circuit board, are being developed. Micro-LED display devices or Mini LED display devices feature high efficiency, high brightness, and high reliability. Such micro-LED display devices or Mini LED display devices are manufactured by transferring LED chips onto a backplane on which transistors using materials such as oxide semiconductors or low-temperature polycrystalline silicon are formed (see, for example, Patent Document 1).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: US Patent No. 8,791,474 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] The manufacturing cost of microLED display devices based on LED chip transfer is high, making it difficult to manufacture microLED display devices at a low cost. On the other hand, if LEDs can be formed on large-area substrates such as amorphous glass substrates, the manufacturing cost can be reduced. However, as mentioned above, since gallium nitride films are formed on sapphire substrates at high temperatures, it is difficult to directly form gallium nitride films on amorphous glass substrates.

[0009] One objective of one embodiment of the present invention is to provide a light-emitting device comprising a nitride semiconductor layer formed on a large-area substrate such as an amorphous glass substrate, in view of the above-mentioned problems. Another objective of one embodiment of the present invention is to provide a light-emitting device forming substrate on which multiple light-emitting devices comprising nitride semiconductor layers are formed.

[0010] Methods for solving problems

[0011] A light-emitting device according to one embodiment of the present invention includes a plurality of pixels arranged in a matrix in a first direction and a second direction intersecting the first direction. The plurality of pixels arranged in a matrix each include a substrate, a conductive alignment layer on the substrate, a first nitride semiconductor layer on the conductive alignment layer, a second nitride semiconductor layer including a light-emitting layer on the first nitride semiconductor layer, and an electrode layer on the second nitride semiconductor layer. The first nitride semiconductor layer and the second nitride semiconductor layer are configured as islands, and the substrate is configured in a manner shared by the plurality of pixels arranged in a matrix.

[0012] A light-emitting device according to one embodiment of the present invention includes a plurality of pixels arranged in a matrix in a first direction and a second direction intersecting the first direction. The plurality of pixels arranged in a matrix each include a substrate, an insulating alignment layer on the substrate, a first nitride semiconductor layer on the insulating alignment layer, a second nitride semiconductor layer including a light-emitting layer on the first nitride semiconductor layer, a first electrode layer on the first nitride semiconductor layer, and a second electrode layer on the second nitride semiconductor layer. The first nitride semiconductor layer and the second nitride semiconductor layer are configured as islands, and the substrate is configured in a manner shared by the plurality of pixels arranged in a matrix. Attached Figure Description

[0013] [ Figure 1 [This is a schematic diagram showing the configuration of a light-emitting device according to one embodiment (first embodiment) of the present invention.]

[0014] [ Figure 2 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment (first embodiment) of the present invention.]

[0015] [ Figure 3 [This is a schematic top view showing the configuration of a light-emitting device according to one embodiment (first embodiment) of the present invention.]

[0016] [ Figure 4A [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (first embodiment) of the present invention.

[0017] [ Figure 4B [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (first embodiment) of the present invention.

[0018] [ Figure 4C [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (first embodiment) of the present invention.

[0019] [ Figure 4D [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (first embodiment) of the present invention.

[0020] [ Figure 4E [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (first embodiment) of the present invention.

[0021] [ Figure 4F [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (first embodiment) of the present invention.

[0022] [ Figure 5 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation of the first embodiment 1).]

[0023] [ Figure 6 This is a schematic top view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation of the first embodiment 1).

[0024] [ Figure 7 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 2 of the first embodiment).]

[0025] [ Figure 8 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 3 of the first embodiment).]

[0026] [ Figure 9 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment (second embodiment) of the present invention.]

[0027] [ Figure 10 [This is a schematic top view showing the configuration of a light-emitting device according to one embodiment (second embodiment) of the present invention.]

[0028] [ Figure 11 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 1 of the second embodiment).]

[0029] [ Figure 12 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 2 of the second embodiment).]

[0030] [ Figure 13[This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 3 of the second embodiment).]

[0031] [ Figure 14 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 4 of the second embodiment).]

[0032] [ Figure 15 [This is a schematic top view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 4 of the second embodiment).]

[0033] [ Figure 16 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 5 of the second embodiment).]

[0034] [ Figure 17 [This is a schematic top view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 5 of the second embodiment).]

[0035] [ Figure 18 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment (the third embodiment) of the present invention.]

[0036] [ Figure 19 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment (the third embodiment) of the present invention.]

[0037] [ Figure 20 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 1 of the third embodiment).]

[0038] [ Figure 21 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 1 of the third embodiment).]

[0039] [ Figure 22 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 2 of the third embodiment).]

[0040] [ Figure 23 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 3 of the third embodiment).]

[0041] [ Figure 24 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment (fourth embodiment) of the present invention.]

[0042] [ Figure 25[This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 1 of the fourth embodiment).]

[0043] [ Figure 26 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment (5th embodiment) of the present invention.]

[0044] [ Figure 27A [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (5th embodiment) of the present invention.

[0045] [ Figure 27B [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (5th embodiment) of the present invention.

[0046] [ Figure 27C [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (5th embodiment) of the present invention.

[0047] [ Figure 27D [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (5th embodiment) of the present invention.

[0048] [ Figure 27E [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (5th embodiment) of the present invention.

[0049] [ Figure 27F [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (5th embodiment) of the present invention.

[0050] [ Figure 27G [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (5th embodiment) of the present invention.

[0051] [ Figure 27H [Illustrated cross-sectional view] is a schematic cross-sectional view showing a method for manufacturing a light-emitting device according to one embodiment (5th embodiment) of the present invention.

[0052] [ Figure 28 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 1 of the fifth embodiment).]

[0053] [ Figure 29 [This is a schematic top view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 1 of the fifth embodiment).]

[0054] [ Figure 30 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (modification 2 of the fifth embodiment).]

[0055] [ Figure 31 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (modification 3 of the fifth embodiment).]

[0056] [ Figure 32 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (modification 4 of the fifth embodiment).]

[0057] [ Figure 33 [This is a schematic top view showing the configuration of a light-emitting device according to one embodiment of the present invention (modification 4 of the fifth embodiment).]

[0058] [ Figure 34 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment (the sixth embodiment) of the present invention.]

[0059] [ Figure 35 [This is a schematic top view showing the configuration of a light-emitting device according to one embodiment (the sixth embodiment) of the present invention.]

[0060] [ Figure 36 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 1 of the sixth embodiment).]

[0061] [ Figure 37 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 2 of the sixth embodiment).]

[0062] [ Figure 38 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 3 of the sixth embodiment).]

[0063] [ Figure 39 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment (the seventh embodiment) of the present invention.]

[0064] [ Figure 40 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 1 of the 7th embodiment).]

[0065] [ Figure 41 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (modification 2 of the 7th embodiment).]

[0066] [ Figure 42 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (modification 3 of the 7th embodiment).]

[0067] [ Figure 43 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment (eighth embodiment) of the present invention.]

[0068] [ Figure 44 [This is a schematic cross-sectional view showing the configuration of a light-emitting device according to one embodiment of the present invention (a variation 1 of the 8th embodiment).]

[0069] [ Figure 45 [This is a schematic diagram showing the structure of a light-emitting device forming substrate according to one embodiment (the 9th embodiment) of the present invention.] Detailed Implementation

[0070] Hereinafter, various embodiments of the present invention will be described with reference to the accompanying drawings. It should be noted that each embodiment is merely an example, and technical solutions that can be easily conceived by those skilled in the art through appropriate modifications while maintaining the inventive spirit are of course included within the scope of the present invention. Furthermore, to make the description clearer, the drawings may schematically represent the width, thickness, or shape of various parts compared to the actual embodiments. However, the shapes illustrated are merely examples and are not intended to limit the interpretation of the present invention.

[0071] In this specification, unless otherwise expressly stated, expressions such as "α includes A, B, or C", "α includes any one of A, B, and C", or "α includes one of the groups selected from A, B, and C" do not exclude the possibility that α includes multiple combinations of A to C. Furthermore, these expressions do not exclude the possibility that α includes other elements.

[0072] In this specification, for ease of explanation, the terms "upper," "above," "lower," or "below" are used. Generally, the direction from the substrate toward the structure is designated as "upper" or "above," based on the substrate to which the structure is formed. Conversely, the direction from the structure toward the substrate is designated as "lower" or "below." Therefore, in the description of structures on the substrate, the surface of the structure facing the substrate is called the lower surface of the structure, and the opposite surface is called the upper surface of the structure. Furthermore, the description of structures on the substrate merely illustrates the vertical relationship between the substrate and the structure; other components may also be placed between the substrate and the structure. Additionally, the terms "upper," "above," "lower," or "below" refer to the stacking order in a structure with multiple layers, and may not necessarily refer to the overlapping positional relationship when viewed from above.

[0073] In this specification, the terms "first", "second" or "third" in the notes to each component are convenient identifiers used to distinguish each component, and have no deeper meaning unless otherwise specified.

[0074] In this specification and accompanying drawings, the same reference numerals are used when referring to multiple identical or similar components in a unified manner. Lowercase or uppercase letters are sometimes added to distinguish the individual components. Additionally, hyphens and natural numbers are sometimes used to distinguish multiple parts within a single component.

[0075] The following implementation methods can be combined with each other as long as there is no technical contradiction.

[0076] <First Embodiment>

[0077] Reference Figures 1 to 4F This invention describes a light-emitting device 100 according to one embodiment of the present invention.

[0078] [1. Structure of the light-emitting device 100]

[0079] Figure 1 This is a schematic diagram illustrating the configuration of a light-emitting device 100 according to one embodiment of the present invention. The light-emitting device 100 has a pixel portion 100P and a terminal portion 100T formed on a substrate 110. The pixel portion 100P is formed in the central portion of the substrate 110, and the terminal portion 100T is formed at the ends of the substrate 110. The pixel portion 100P includes a plurality of pixels 100-p arranged in a first direction and a second direction orthogonal (intersecting) to the first direction. As detailed later, light-emitting diodes (LEDs) are formed in each of the plurality of pixels 100-p. The terminal portion 100T includes a plurality of terminals 100-t. Power supply lines are connected to the plurality of terminals 100-t, allowing voltage (current supply) to be applied to the LEDs within the pixels 100-p. It should be noted that, although not shown in detail, transistors can also be provided in the pixels 100-p, and the LEDs can be controlled to be turned on or off using the transistors.

[0080] Figure 2 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 100 according to one embodiment of the present invention. Specifically, Figure 2 It is a cross-sectional view at 100 pixels. Additionally, Figure 3 This is a schematic top view showing the configuration of a light-emitting device 100 according to one embodiment of the present invention.

[0081] like Figure 2 As shown, the light-emitting device 100 includes a substrate 110, a conductive alignment layer 120, a first nitride semiconductor layer 130, a second nitride semiconductor layer 140, an electrode layer 150, a first rib 160, and a second rib 170. It should be noted that in... Figure 3 For ease of explanation, the electrode layer 150 on the second nitride semiconductor layer 140 and the second rib 170 are omitted.

[0082] A conductive alignment layer 120 is disposed on the substrate 110. Furthermore, the conductive alignment layer 120 is disposed in a manner shared by multiple pixels 100-p arranged in a matrix.

[0083] The first nitride semiconductor layer 130 and the second nitride semiconductor layer 140 are sequentially disposed on the conductive alignment layer 120. In addition, the first nitride semiconductor layer 130 and the second nitride semiconductor layer 140 are each disposed in an island shape on each pixel 100-p arranged in a matrix shape.

[0084] The electrode layer 150 is disposed on the second nitride semiconductor layer 140 and the second rib 170 in a manner that covers the second nitride semiconductor layer 140. In addition, the electrode layer 150 is configured to be shared by a plurality of pixels 100-p arranged in a matrix.

[0085] The first rib 160 is arranged in a grid pattern on the conductive alignment layer 120. Additionally, the second rib 170 is arranged in a grid pattern on the first rib 160. It should be noted that the plurality of pixels 100-p are divided by the first rib 160 and the second rib 170.

[0086] The stack of the first rib 160 and the second rib 170 includes an opening exposing the conductive alignment layer 120. Furthermore, in the opening of the stack of the first rib 160 and the second rib 170, a stack of the first nitride semiconductor layer 130 and the second nitride semiconductor layer 140 is provided to cover the conductive alignment layer 120. That is, the stacks of multiple first nitride semiconductor layers 130 and second nitride semiconductor layers 140 are separated by the first rib 160 and the second rib 170.

[0087] The following describes in detail the components of the light-emitting device 100.

[0088] Substrate 110 serves as a support substrate for the LED. As detailed later, in the light-emitting device 100, since the first nitride semiconductor layer 130 and the second nitride semiconductor layer 140 are formed by sputtering, substrate 110 only needs to have a heat resistance of, for example, around 600 degrees Celsius. Therefore, an amorphous glass substrate can be used as substrate 110, for example. Alternatively, resin substrates such as polyimide substrates, acrylic resin substrates, siloxane substrates, or fluororesin substrates can also be used as substrate 110. It should be noted that amorphous glass substrates or resin substrates are substrates that can achieve large-area applications. Furthermore, polycrystalline substrates can also be used as substrate 110. Compared to sapphire substrates used in the conventional deposition of nitride semiconductor films, polycrystalline substrates can achieve larger areas and, like amorphous glass substrates or resin substrates, can be used as support substrates for the LEDs of the light-emitting device 100.

[0089] Although not shown, a base layer can also be provided in the substrate 110. The base layer prevents the diffusion of impurities from the substrate 110 or from external sources (such as moisture or sodium (Na)). For example, silicon nitride (SiN) can be used as the base layer. x ) films, etc. Additionally, silicon dioxide (SiO2) can also be used as a substrate layer, for example. x ) film and silicon nitride (SiN) x )Layered membranes.

[0090] The conductive alignment layer 120 can improve the crystallinity of nitride semiconductor films such as gallium nitride (GaN) deposited on the conductive alignment layer 120. Specifically, the conductive alignment layer 120 can be controlled to grow such that the c-axis of the nitride semiconductor film deposited on the conductive alignment layer 120 is in the thickness direction. In other words, the conductive alignment layer 120 can be controlled to give the first nitride semiconductor layer 130 a c-axis orientation. The nitride semiconductor with a hexagonal close-packed structure is grown in the c-axis direction to minimize surface energy, and by forming the nitride semiconductor film on the conductive alignment layer 120, the crystallization growth of the nitride semiconductor film in the c-axis direction is promoted. As the conductive alignment layer 120, conductive materials having a hexagonal close-packed structure, a face-centered cubic structure, or structures based on these can be used. Here, the structure based on the hexagonal close-packed structure or the face-centered cubic structure includes a crystallization structure in which the c-axis is not 90° relative to the a-axis and b-axis. A conductive alignment layer 120 using a conductive material having a hexagonal densest structure or a structure based thereon is oriented relative to the substrate 110 along the (0001) direction, i.e., along the c-axis direction (hereinafter referred to as the hexagonal densest structure (0001) orientation). Alternatively, a conductive alignment layer 120 using a material having a face-centered cubic structure or a structure based thereon is oriented relative to the substrate 110 along the (111) direction (hereinafter referred to as the face-centered cubic structure (111) orientation). The conductive alignment layer 120 has a hexagonal densest structure (0001) orientation or a face-centered cubic structure (111) orientation, thereby promoting the crystallization growth of the nitride semiconductor film formed on the conductive alignment layer 120 in the c-axis direction, and the first nitride semiconductor layer 130 has a highly crystalline c-axis orientation.

[0091] The crystallinity of the nitride semiconductor film on the conductive alignment layer 120 is affected by the surface state of the conductive alignment layer 120. Therefore, it is preferable that the conductive alignment layer 120 has few irregularities and a smooth surface. For example, it is preferable that the arithmetic mean roughness (Ra) of the surface of the conductive alignment layer 120 is less than 2.3 nm. In addition, it is preferable that the root mean square roughness (Rq) of the surface of the conductive alignment layer 120 is less than 2.9 nm. When the surface roughness of the conductive alignment layer 120 is as described above, the first nitride semiconductor layer 130 has a c-axis orientation with higher crystallinity. It should be noted that it is preferable that the film thickness of the conductive alignment layer 120 is 50 nm or more.

[0092] The conductive alignment layer 120 is conductive and can also function as an electrode in an LED. For example, titanium (Ti) or titanium nitride (TiN) can be used as the conductive alignment layer 120. x Titanium oxide (TiO) x Materials such as graphene, zinc oxide (ZnO), magnesium diboride (MgB2), aluminum (Al), silver (Ag), calcium (Ca), nickel (Ni), copper (Cu), strontium (Sr), rhodium (Rh), palladium (Pd), cerium (Ce), ytterbium (Yb), iridium (Ir), platinum (Pt), gold (Au), lead (Pb), actinium (Ac), thorium (Th), BiLaTiO, SrFeO, BiFeO, BaFeO, ZnFeO, or PMnN-PZT are preferred. In particular, titanium, graphene, or zinc oxide is preferably used as the conductive alignment layer 120.

[0093] The first nitride semiconductor layer 130 includes the first semiconductor layer of the LED. The first nitride semiconductor layer 130 on the conductive alignment layer 120 includes a nitride semiconductor with a highly crystalline c-axis orientation.

[0094] The second nitride semiconductor layer 140 includes a light-emitting layer and a second semiconductor layer for the LED. The second nitride semiconductor layer 140 also includes a nitride semiconductor, and since it is disposed on the first nitride semiconductor layer 130 which has a highly crystalline c-axis orientation, the second nitride semiconductor layer 140 also has a highly crystalline c-axis orientation. The light-emitting layer is located between the first semiconductor layer and the second semiconductor layer. That is, the stack of the first nitride semiconductor layer 130 and the second nitride semiconductor layer 140 includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. One of the first semiconductor layer and the second semiconductor layer is an n-type nitride semiconductor layer, and the other is a p-type nitride semiconductor layer. For example, a silicon-doped (Si) GaN film can be used as the n-type nitride semiconductor layer. For example, a stack of indium gallium nitride (InGaN) films and gallium nitride films can be used as the light-emitting layer. As a p-type nitride semiconductor layer, a magnesium-doped GaN film can be used, for example.

[0095] Electrode layer 150 functions as an electrode for the LED. As electrode layer 150, transparent oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO) can be used. Alternatively, metallic materials such as indium (In), palladium (Pd), or gold (Au) can be used as electrode layer 150. When the second semiconductor layer of the second nitride semiconductor layer 140 is a p-type nitride semiconductor layer, electrode layer 150 serves as a p-type electrode, and palladium or gold can be used, for example. Furthermore, when the second semiconductor layer of the second nitride semiconductor layer 140 is an n-type nitride semiconductor layer, indium can be used as an n-type electrode in electrode layer 150.

[0096] It should be noted that in the light-emitting device 100, one of the conductive alignment layer 120 and the electrode layer 150 is a p-type electrode, and the other of the conductive alignment layer 120 and the electrode layer 150 is an n-type electrode. In order to extract the light emitted from the light-emitting layer of the second nitride semiconductor layer 140 to the outside, at least one of the p-type electrode and the n-type electrode needs to be transparent or semi-transparent. For example, a semi-transparent p-type electrode or n-type electrode can be formed using a thin metal film.

[0097] The first rib 160 and the second rib 170 function as respective partitions dividing a plurality of pixels 100-p. Each of the first rib 160 and the second rib 170 can be made of inorganic materials such as silicon oxide or silicon nitride, or laminates of these inorganic materials. Alternatively, each of the first rib 160 and the second rib 170 can be made of organic materials such as acrylic resin or polyimide.

[0098] It should be noted that, although not illustrated, a protective film can be applied to cover the LEDs as needed. Silicon nitride (SiN) can be used as the protective film. x ) film. Alternatively, silicon dioxide (SiO2) can also be used as a protective film, for example. x ) film and silicon nitride (SiN) x )Layered membranes.

[0099] Each of the plurality of pixels 100-p includes a conductive alignment layer 120, a first nitride semiconductor layer 130, a second nitride semiconductor layer 140, and an electrode layer 150 as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 120, and the other is the electrode layer 150. The conductive alignment layer 120 and the electrode layer 150 are shared by the plurality of pixels 100-p arranged in a matrix. Therefore, in the light-emitting device 100, it is not possible to control each of the plurality of pixels 100-p individually. It should be noted that, for ease of explanation, the pixel 100-p sometimes includes a substrate 110.

[0100] [2. Method for manufacturing the light-emitting device 100]

[0101] Reference Figures 4A to 4F This invention describes a method for manufacturing a light-emitting device 100 according to one embodiment of the present invention. Figures 4A to 4F This is a schematic cross-sectional view illustrating a method for manufacturing a light-emitting device 100 according to one embodiment of the present invention.

[0102] First, such as Figure 4A As shown, a conductive alignment layer 120 is formed on the substrate 110. The conductive alignment layer 120 can be formed using any method (apparatus) such as sputtering or CVD.

[0103] Next, as Figure 4B As shown, a first rib 160 including an opening exposing the conductive alignment layer 120 is formed on the conductive alignment layer 120. The first rib 160 is formed by depositing an inorganic or organic material into a film and then patterning the inorganic or organic material using photolithography.

[0104] Next, as Figure 4C As shown, a first nitride semiconductor film 130-a is formed on the conductive alignment layer 120 and the first rib 160 in such a way that it covers the opening of the first rib 160. The first nitride semiconductor film 130-a can be formed by sputtering. In the first nitride semiconductor film 130-a, the region in contact with the conductive alignment layer 120 has a highly crystalline c-axis orientation.

[0105] Here, as an example of film formation using sputtered nitride semiconductor films, the formation of gallium nitride films will be described.

[0106] A substrate 110 with a conductive alignment layer 120 is disposed within a vacuum chamber opposite to a gallium nitride target. Regarding the gallium nitride composition ratio in the gallium nitride target, it is preferable that gallium is 0.7 to 2 or less relative to nitrogen. Furthermore, in addition to the sputtering gas (argon or krypton, etc.), nitrogen can be supplied to the vacuum chamber separately. In this case, regarding the gallium nitride composition ratio in the gallium nitride target, it is preferable that gallium is more abundant than nitrogen. For example, nitrogen can be supplied using a nitrogen radical supply source. The sputtering power source can be any of a DC power supply, an RF power supply, or a pulsed DC power supply.

[0107] The substrate 110 within the vacuum chamber can also be heated. For example, the substrate 110 can be heated to a temperature above 400°C and below 600°C. This substrate temperature also allows for the application of amorphous glass substrates with low heat resistance. Furthermore, this substrate temperature is lower than the film formation temperature in MOCVD or HVPE.

[0108] After the vacuum chamber is fully evacuated, sputtering gas is supplied. In addition, a voltage is applied between the substrate 110 and the gallium nitride target at a specified pressure to generate plasma and form a gallium nitride film.

[0109] The above describes the method for forming gallium nitride films based on sputtering, but the sputtering configuration or conditions can be appropriately modified. It should be noted that if a gallium nitride target doped with silicon and a gallium nitride target doped with magnesium are used instead of a gallium nitride target, then n-type gallium nitride films (n-type gallium nitride semiconductor films) and p-type gallium nitride films (p-type gallium nitride semiconductor films) can be formed, respectively.

[0110] Next, as Figure 4D As shown, a second nitride semiconductor film 140-a is formed on the first nitride semiconductor film 130-a. The second nitride semiconductor film 140-a can be formed by sputtering. Since the second nitride semiconductor film 140-a is formed on the first nitride semiconductor film 130-a which has a highly crystalline c-axis orientation, the second nitride semiconductor film 140-a also has a highly crystalline c-axis orientation, just like the first nitride semiconductor film 130-a.

[0111] Next, as Figure 4E As shown, the first nitride semiconductor film 130-a and the second nitride semiconductor film 140-a are patterned using photolithography to form the first nitride semiconductor layer 130 and the second nitride semiconductor layer 140. In addition, through patterning, a grid-like groove 170-g is formed that exposes the first rib 160.

[0112] Next, as Figure 4F As shown, a second rib 170 is formed on the first rib 160, with a filling groove 170-g. The second rib 170 is formed by depositing an inorganic or organic material into a film and then patterning the inorganic or organic material using photolithography. Through patterning, the second rib 170 is formed such that it at least covers the side surface of the second nitride semiconductor layer 140.

[0113] Finally, by forming an electrode layer 150 covering the second nitride semiconductor layer 140 and the second rib 170, a process is fabricated. Figures 1-3 The light-emitting device 100 shown

[0114] In the light-emitting device 100, since the first nitride semiconductor layer 130 is provided on the conductive alignment layer 120, the crystallinity of the first nitride semiconductor layer 130 is improved. Furthermore, by providing the second nitride semiconductor layer 140 on the first nitride semiconductor layer 130, whose crystallinity has been improved, the crystallinity of the second nitride semiconductor layer 140, which includes the light-emitting layer, is also improved. Therefore, the luminous efficiency of the light-emitting device 100 can be improved. Additionally, the conductive alignment layer 120 can be used as the electrode of the LED. Moreover, by providing the conductive alignment layer 120 on the substrate 110, a large-area amorphous substrate can be used as the substrate 110 to manufacture multiple light-emitting devices 100.

[0115] <Modification 1 of the first embodiment>

[0116] Figure 5 and Figure 6 These are schematic cross-sectional and top views illustrating the configuration of a light-emitting device 100A according to one embodiment of the present invention. Specifically, Figure 5 This is a cross-sectional view of pixel 100A-p. The light-emitting device 100A is a variation of the light-emitting device 100. Therefore, when the configuration of the light-emitting device 100A is the same as that of the light-emitting device 100, its description is sometimes omitted.

[0117] like Figure 5 As shown, the light-emitting device 100A includes a substrate 110, a conductive alignment layer 120, a first nitride semiconductor layer 130, a second nitride semiconductor layer 140, an electrode layer 150A, a first rib 160, and a second rib 170.

[0118] like Figure 6 As shown, the electrode layer 150A extends along a first direction of the plurality of pixels 100A-p arranged in a matrix, and is provided in a manner shared by the plurality of pixels 100A-p arranged in the first direction. In addition, the plurality of electrode layers 150A are separated from each other by grooves 150A-g exposing the second ribs 170.

[0119] Each of the multiple pixels 100A-p includes a conductive alignment layer 120, a first nitride semiconductor layer 130, a second nitride semiconductor layer 140, and an electrode layer 150A as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 120, and the other is the electrode layer 150A. The conductive alignment layer 120 is shared by the multiple pixels 100-p arranged in a matrix. On the other hand, the electrode layer 150A is shared by the multiple pixels 100A-p arranged in the first direction. Therefore, in the light-emitting device 100A, the multiple pixels 100A-p arranged in the first direction can be treated as a single unit to control light emission.

[0120] <Modification 2 of the first embodiment>

[0121] Figure 7 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 100B according to one embodiment of the present invention. Specifically, Figure 7 This is a cross-sectional view of pixel 100B-p. The light-emitting device 100B is a variation of the light-emitting device 100. Therefore, when the configuration of the light-emitting device 100B is the same as that of the light-emitting device 100 or the light-emitting device 100A, its description is sometimes omitted.

[0122] like Figure 7 As shown, the light-emitting device 100B includes a substrate 110, a conductive alignment layer 120, a first nitride semiconductor layer 130, a second nitride semiconductor layer 140, an electrode layer 150B, a first rib 160, and a second rib 170.

[0123] Although not shown, electrode layer 150B, like electrode layer 150A, extends along a first direction of the plurality of pixels 100B-p arranged in a matrix, and is configured in a manner shared by the plurality of pixels 100B-p arranged in the first direction. In addition, the plurality of electrode layers 150B are separated from each other by grooves 150B-g exposing the second ribs 170.

[0124] Each of the plurality of pixels 100B-p includes a conductive alignment layer 120, a first nitride semiconductor layer 130, a second nitride semiconductor layer 140, and an electrode layer 150B as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 120, and the other is the electrode layer 150B. The conductive alignment layer 120 is shared by the plurality of pixels 100B-p arranged in a matrix. On the other hand, the electrode layer 150B is shared by the plurality of pixels 100B-p arranged in the first direction. Therefore, in the light-emitting device 100B, light emission can be controlled on a unit consisting of the plurality of pixels 100B-p arranged in the first direction.

[0125] Furthermore, in the light-emitting device 100B, in the groove portion 150B-g, not only is the second rib portion 170 exposed, but also a portion of the surface of the second nitride semiconductor layer 140 is exposed. Therefore, even if the electrode layer 150B is formed of a non-transparent material, light emission from the light-emitting layer of the second nitride semiconductor layer 140 can be extracted in the upper surface direction.

[0126] <Modification 3 of the first embodiment>

[0127] Figure 8 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 100C according to one embodiment of the present invention. Specifically, Figure 8This is a cross-sectional view of pixel 100C-p. The light-emitting device 100C is a variation of the light-emitting device 100. Therefore, when the configuration of the light-emitting device 100C is the same as that of the light-emitting devices 100 to 100B, its description is sometimes omitted.

[0128] like Figure 8 As shown, the light-emitting device 100C includes a substrate 110, a conductive alignment layer 120, a first nitride semiconductor layer 130, a second nitride semiconductor layer 140, an electrode layer 150C, a first rib 160, and a second rib 170.

[0129] Although not shown, electrode layer 150C, like electrode layer 150A, extends along a first direction of the plurality of pixels 100C-p arranged in a matrix, and is configured in a manner shared by the plurality of pixels 100C-p arranged in the first direction. In addition, the plurality of electrode layers 150C are separated from each other by grooves 150C-g exposing the second ribs 170.

[0130] Each of the plurality of pixels 100C-p includes a conductive alignment layer 120, a first nitride semiconductor layer 130, a second nitride semiconductor layer 140, and an electrode layer 150C as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 120, and the other is the electrode layer 150C. The conductive alignment layer 120 is shared by the plurality of pixels 100-p arranged in a matrix. On the other hand, the electrode layer 150C is shared by the plurality of pixels 100C-p arranged in the first direction. Therefore, in the light-emitting device 100C, light emission can be controlled on a unit consisting of the plurality of pixels 100C-p arranged in the first direction.

[0131] Furthermore, in the light-emitting device 100C, in the groove portions 150C-g, not only is the second rib 170 exposed, but also a portion of the surface of the second nitride semiconductor layer 140 is exposed. Therefore, even if the electrode layer 150C is formed of a non-transparent material, light emission from the light-emitting layer of the second nitride semiconductor layer 140 can be extracted in the upper surface direction. Moreover, in the light-emitting device 100C, in the second direction orthogonal to the first direction, the width of the electrode layer 150C is smaller than the opening width of the second rib 170. Therefore, in the light-emitting device 100C, more light emission can be extracted in the upper surface direction than in the light-emitting device 100B.

[0132] <Second Implementation>

[0133] Reference Figure 9 and Figure 10This invention describes a light-emitting device 101 according to one embodiment. It should be noted that when the configuration of the light-emitting device 101 is the same as that of the light-emitting device 100, its description is sometimes omitted.

[0134] Figure 9 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 101 according to one embodiment of the present invention. Specifically, Figure 9 This is a cross-sectional view of pixel 101-p. Additionally, Figure 10 This is a schematic top view illustrating the configuration of a light-emitting device 101 according to one embodiment of the present invention. It should be noted that, for ease of explanation, [the following text is incomplete and requires further context: "In..."] Figure 10 The electrode layer 151 on the second nitride semiconductor layer 141 and the second rib 171 is omitted. Additionally, in... Figure 10 In the diagram, for ease of explanation, the conductive alignment layer 121 is represented by a dashed line.

[0135] like Figure 9 As shown, the light-emitting device 101 includes a substrate 111, a conductive alignment layer 121, a first nitride semiconductor layer 131, a second nitride semiconductor layer 141, an electrode layer 151, a first rib 161, and a second rib 171.

[0136] A conductive alignment layer 121 is disposed on the substrate 111. Furthermore, the conductive alignment layer 121 extends along a first direction and is disposed in a manner shared by a plurality of pixels 101-p arranged in the first direction. The plurality of conductive alignment layers 121 are separated from each other by grooves 121-g exposing the substrate 111. It should be noted that a first rib 161 is filled within the grooves 121-g.

[0137] The first nitride semiconductor layer 131 and the second nitride semiconductor layer 141 are sequentially disposed on the conductive alignment layer 121. In addition, each of the first nitride semiconductor layer 131 and the second nitride semiconductor layer 141 is disposed in an island shape on each pixel 101-p which is arranged in a matrix shape.

[0138] The electrode layer 151 is disposed on the second nitride semiconductor layer 141 and the second rib 171 in such a way that it covers the second nitride semiconductor layer 141. In addition, the electrode layer 151 is disposed in a manner shared by a plurality of pixels 101-p arranged in a matrix.

[0139] The first rib 161 is provided on the substrate 111 in a grid pattern. In addition, the second rib 171 is provided on the first rib 161 in a grid pattern.

[0140] Each of the plurality of pixels 101-p includes a conductive alignment layer 121, a first nitride semiconductor layer 131, a second nitride semiconductor layer 141, and an electrode layer 151 as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 121, and the other is the electrode layer 151. The conductive alignment layer 121 is provided in a manner shared by the plurality of pixels 101-p arranged in the first direction. On the other hand, the electrode layer 151 is provided in a manner shared by the plurality of pixels 101-p arranged in a matrix. Therefore, in the light-emitting device 101, light emission can be controlled on a unit basis by the plurality of pixels 101-p arranged in the first direction. It should be noted that, for ease of explanation, the pixel 101-p sometimes includes a substrate 111.

[0141] In the light-emitting device 101, since the first nitride semiconductor layer 131 is provided on the conductive alignment layer 121, the crystallinity of the first nitride semiconductor layer 131 is improved. Furthermore, by providing the second nitride semiconductor layer 141 on the first nitride semiconductor layer 131 with improved crystallinity, the crystallinity of the second nitride semiconductor layer 141, which includes the light-emitting layer, is also improved. Therefore, the luminous efficiency of the light-emitting device 101 can be improved. Additionally, the conductive alignment layer 121 can be used as an electrode for an LED. Moreover, by providing the conductive alignment layer 121 on the substrate 111, multiple light-emitting devices 101 can be manufactured using a large-area amorphous substrate as the substrate 111.

[0142] <Modification 1 of the second embodiment>

[0143] Figure 11 This is a schematic diagram illustrating the configuration of a light-emitting device 101A according to one embodiment of the present invention. Specifically, Figure 11 This is a cross-sectional view of pixel 101A-p. The light-emitting device 101A is a variation of the light-emitting device 101. Therefore, when the configuration of the light-emitting device 101A is the same as that of the light-emitting device 101, its description is sometimes omitted.

[0144] like Figure 11 As shown, the light-emitting device 101A includes a substrate 111, a conductive alignment layer 121, a first nitride semiconductor layer 131, a second nitride semiconductor layer 141, an electrode layer 151A, a first rib 161, and a second rib 171.

[0145] Although not shown, the electrode layer 151A extends along a first direction of the plurality of pixels 101A-p arranged in a matrix, and is provided in a manner shared by the plurality of pixels 101A-p arranged in the first direction. In addition, the plurality of electrode layers 151A are separated from each other by grooves 151A-g exposing the second ribs 171.

[0146] Each of the plurality of pixels 101A-p includes a conductive alignment layer 121, a first nitride semiconductor layer 131, a second nitride semiconductor layer 141, and an electrode layer 151A as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 121, and the other of the electrodes of the LED is the electrode layer 151A. The conductive alignment layer 121 and the electrode layer 151A are provided in a manner shared by the plurality of pixels 101A-p arranged in the first direction. Therefore, in the light-emitting device 101A, light emission can be controlled on a unit consisting of the plurality of pixels 101A-p arranged in the first direction.

[0147] <Modification 2 of the second embodiment>

[0148] Figure 12 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 101B according to one embodiment of the present invention. Specifically, Figure 12 This is a cross-sectional view of pixel 101B-p. The light-emitting device 101B is a variation of the light-emitting device 101. Therefore, when the configuration of the light-emitting device 101B is the same as that of the light-emitting device 101 or the light-emitting device 101A, its description is sometimes omitted.

[0149] like Figure 12 As shown, the light-emitting device 101B includes a substrate 111, a conductive alignment layer 121, a first nitride semiconductor layer 131, a second nitride semiconductor layer 141, an electrode layer 151B, a first rib 161, and a second rib 171.

[0150] Although not shown, electrode layer 151B, like electrode layer 151A, extends along the first direction of the matrix-arranged pixels 101B-p, and is configured to be shared by multiple pixels 101B-p arranged in the first direction. In addition, the multiple electrode layers 151B are separated from each other by grooves 151B-g exposing the second ribs 171.

[0151] Each of the plurality of pixels 101B-p includes a conductive alignment layer 121, a first nitride semiconductor layer 131, a second nitride semiconductor layer 141, and an electrode layer 151B as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 121, and the other of the electrodes of the LED is the electrode layer 151B. The conductive alignment layer 121 and the electrode layer 151B are provided in a manner shared by the plurality of pixels 101B-p arranged in the first direction. Therefore, in the light-emitting device 101B, light emission can be controlled on a unit consisting of the plurality of pixels 101B-p arranged in the first direction.

[0152] Furthermore, in the light-emitting device 101B, in the groove portion 151B-g, not only is the second rib portion 171 exposed, but also a portion of the surface of the second nitride semiconductor layer 141 is exposed. Therefore, even if the electrode layer 151B is formed of a non-transparent material, light emission from the light-emitting layer of the second nitride semiconductor layer 141 can be extracted in the upper surface direction.

[0153] <Modification 3 of the second embodiment>

[0154] Figure 13 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 101C according to one embodiment of the present invention. Specifically, Figure 13 This is a cross-sectional view of pixel 101C-p. The light-emitting device 101C is a variation of the light-emitting device 101. Therefore, when the configuration of the light-emitting device 101C is the same as that of the light-emitting devices 101 to 101B, its description is sometimes omitted.

[0155] like Figure 13 As shown, the light-emitting device 101C includes a substrate 111, a conductive alignment layer 121, a first nitride semiconductor layer 131, a second nitride semiconductor layer 141, an electrode layer 151C, a first rib 161, and a second rib 171.

[0156] Although not shown, electrode layer 151C, like electrode layer 151A, extends along a first direction of the plurality of pixels 101C-p arranged in a matrix, and is configured in a manner shared by the plurality of pixels 101C-p arranged in the first direction. In addition, the plurality of electrode layers 151C are separated from each other by grooves 151C-g exposing the second ribs 171.

[0157] Each of the plurality of pixels 101C-p includes a conductive alignment layer 121, a first nitride semiconductor layer 131, a second nitride semiconductor layer 141, and an electrode layer 151C as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 121, and the other of the electrodes of the LED is the electrode layer 151C. The conductive alignment layer 121 and the electrode layer 151C are provided in a manner shared by the plurality of pixels 101C-p arranged in the first direction. Therefore, in the light-emitting device 101C, light emission can be controlled on a unit consisting of the plurality of pixels 101C-p arranged in the first direction.

[0158] Furthermore, in the light-emitting device 101C, in the groove portions 151C-g, not only is the second rib 171 exposed, but a portion of the surface of the second nitride semiconductor layer 141 is also exposed. Therefore, even if the electrode layer 151C is formed of a non-transparent material, light emission from the light-emitting layer of the second nitride semiconductor layer 141 can be extracted in the upper surface direction. Moreover, in the light-emitting device 101C, in the second direction orthogonal to the first direction, the width of the electrode layer 151C is smaller than the opening width of the second rib 171. Therefore, in the light-emitting device 101C, more light emission can be extracted in the upper surface direction than in the light-emitting device 101B.

[0159] <Modification 4 of the second embodiment>

[0160] Figure 14 and Figure 15 These are schematic cross-sectional and top views illustrating the configuration of a light-emitting device 101D according to one embodiment of the present invention. Specifically, Figure 14 This is a cross-sectional view of pixel 101D-p. Additionally, in Figure 15 In the diagram, the conductive alignment layer 121 is shown as a dashed line for ease of explanation. The light-emitting device 101D is a variation of the light-emitting device 101. Therefore, when the configuration of the light-emitting device 101D is the same as that of the light-emitting devices 101 to 101C, its description is sometimes omitted.

[0161] like Figure 14 As shown, the light-emitting device 101D includes a substrate 111, a conductive alignment layer 121, a first nitride semiconductor layer 131, a second nitride semiconductor layer 141, an electrode layer 151D, a first rib 161, and a second rib 170.

[0162] like Figure 15 As shown, the electrode layer 151D extends along a second direction orthogonal to the first direction along the plurality of pixels 101D-p arranged in a matrix, and is provided in a manner shared by the plurality of pixels 101D-p arranged in the second direction. In addition, the plurality of electrode layers 151D are separated from each other by grooves 150D-g exposing the second ribs 171.

[0163] Each of the plurality of pixels 101D-p includes a conductive alignment layer 121, a first nitride semiconductor layer 131, a second nitride semiconductor layer 141, and an electrode layer 151D as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 121, and the other is the electrode layer 151D. The conductive alignment layer 121 is provided in a manner shared by the plurality of pixels 101D-p arranged in the first direction. On the other hand, the electrode layer 151D is provided in a manner shared by the plurality of pixels 101D-p arranged in the second direction. Therefore, in the light-emitting device 101D, the light emission of the pixels 101D-p at the intersection of the conductive alignment layer 121 and the electrode layer 151D can be controlled. That is, in the light-emitting device 101D, the light emission of the pixels 101D-p can be controlled by passive driving.

[0164] <Modification 5 of the second embodiment>

[0165] Figure 16 and Figure 17 These are schematic cross-sectional and top views illustrating the configuration of a light-emitting device 101E according to one embodiment of the present invention. Specifically, Figure 16 This is a cross-sectional view of pixel 101E-p. Additionally, for ease of explanation, in... Figure 17 In this diagram, the electrode layer 151 on the second nitride semiconductor layer 141 and the second rib 171 is omitted. Additionally, in... Figure 17 In this text, for ease of explanation, the conductive alignment layer 121E, described later, is indicated by dashed lines. The light-emitting device 101E is a variation of the light-emitting device 101. Therefore, when the configuration of the light-emitting device 101E is the same as that of the light-emitting devices 101 to 101D, its description is sometimes omitted.

[0166] like Figure 16 As shown, the light-emitting device 101E includes a substrate 111, a conductive alignment layer 121E, a first nitride semiconductor layer 131, a second nitride semiconductor layer 141, an electrode layer 151, a first rib 161, and a second rib 171.

[0167] like Figure 17 As shown, conductive alignment layers 121E are disposed in an island-like manner on each pixel 101E-p, which is arranged in a matrix. In addition, the multiple conductive alignment layers 121E are separated from each other by slots 121E-g that are configured in a grid pattern.

[0168] Each of the plurality of pixels 101E-p includes a conductive alignment layer 121E, a first nitride semiconductor layer 131, a second nitride semiconductor layer 141, and an electrode layer 151 as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 121E, and the other is the electrode layer 151. The conductive alignment layer 121E is arranged in an island-like configuration on each of the pixels 101E-p arranged in a matrix. On the other hand, the electrode layer 151 is provided in a manner shared by the plurality of pixels 101E-p arranged in a matrix. In the light-emitting device 101E, a transistor for controlling the LED is provided in the substrate 111. Furthermore, the plurality of conductive alignment layers 121E are each electrically connected to the transistor. Therefore, in the light-emitting device 101E, the light emission of each of the plurality of pixels 101E-p arranged in a matrix can be controlled. That is, in the light-emitting device 101E, the light emission of the pixels 101E-p can be controlled by active driving.

[0169] <Third Implementation>

[0170] Reference Figure 18 and Figure 19 This invention describes a light-emitting device 102 according to one embodiment. It should be noted that when the configuration of the light-emitting device 102 is the same as that of the light-emitting device 100 or the light-emitting device 101, its description may be omitted.

[0171] Figure 18 and Figure 19 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 102 according to one embodiment of the present invention. Specifically, Figure 18 and Figure 19 It is a cross-sectional view of pixel 102-p.

[0172] like Figure 18 As shown, the light-emitting device 102 includes a substrate 112, a conductive alignment layer 122, a first nitride semiconductor layer 132, a second nitride semiconductor layer 142, an electrode layer 152, and a rib 172.

[0173] A conductive alignment layer 122 is disposed on the substrate 112. Furthermore, the conductive alignment layer 122 extends along a first direction and is disposed in a manner shared by a plurality of pixels 102-p arranged in the first direction. The plurality of conductive alignment layers 122 are separated from each other by grooves 172-g exposing the substrate 112. It should be noted that ribs 172 are filled within the grooves 172-g.

[0174] The first nitride semiconductor layer 132 and the second nitride semiconductor layer 142 are sequentially disposed on the conductive alignment layer 122. In addition, the first nitride semiconductor layer 132 and the second nitride semiconductor layer 142 are respectively disposed in an island shape on each pixel 102-p arranged in a matrix shape.

[0175] The electrode layer 152 is disposed on the second nitride semiconductor layer 142 and the rib 172 in a manner that covers the second nitride semiconductor layer 142. In addition, the electrode layer 152 is disposed in a manner that is shared by a plurality of pixels 102-p arranged in a matrix.

[0176] Ribs 172 are provided on the substrate 111 in a grid pattern. That is, ribs 172 are provided in a manner that fills the grid-shaped grooves 172-g. For example... Figure 18 and Figure 19 As shown, the depth of the groove 172-g varies depending on the direction in which it extends. For example... Figure 18 As shown, in the second direction of pixel 102-p, the groove 172-g is provided in such a way that the surface of the substrate 112 is exposed. On the other hand, as... Figure 19 As shown, in the first direction orthogonal to the second direction, the groove 172-g is provided in such a way that the surface of the conductive alignment layer 122 extending in the first direction is exposed.

[0177] Each of the plurality of pixels 102-p comprises a conductive alignment layer 122, a first nitride semiconductor layer 132, a second nitride semiconductor layer 142, and an electrode layer 152 as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 122, and the other is the electrode layer 152. The conductive alignment layer 122 is provided in a manner shared by the plurality of pixels 102-p arranged in the first direction. On the other hand, the electrode layer 152 is provided in a manner shared by the plurality of pixels 102-p arranged in a matrix. Therefore, in the light-emitting device 102, light emission can be controlled on a unit consisting of the plurality of pixels 102-p arranged in the first direction. It should be noted that, for ease of explanation, the pixel 102-p sometimes includes a substrate 112.

[0178] In the light-emitting device 102, since a first nitride semiconductor layer 132 is provided on the conductive alignment layer 122, the crystallinity of the first nitride semiconductor layer 132 is improved. Furthermore, a second nitride semiconductor layer 142 is provided on the first nitride semiconductor layer 132, which has improved crystallinity, thereby also improving the crystallinity of the second nitride semiconductor layer 142, which includes the light-emitting layer. Therefore, the luminous efficiency of the light-emitting device 102 can be improved. Additionally, the conductive alignment layer 122 can be used as an electrode for an LED. Moreover, by providing the conductive alignment layer 122 on the substrate 112, multiple light-emitting devices 102 can be manufactured using a large-area amorphous substrate as the substrate 112.

[0179] <Modification 1 of the third embodiment>

[0180] Figure 20 and Figure 21This is a schematic diagram illustrating the configuration of a light-emitting device 102A according to one embodiment of the present invention. Specifically, Figure 20 and Figure 21 This is a cross-sectional view of pixel 102A-p. The light-emitting device 102A is a variation of the light-emitting device 102. Therefore, when the configuration of the light-emitting device 102A is the same as that of the light-emitting device 102, its description is sometimes omitted.

[0181] like Figure 20 As shown, the light-emitting device 102A includes a substrate 112, a conductive alignment layer 122, a first nitride semiconductor layer 132, a second nitride semiconductor layer 142, an electrode layer 152A, and a rib 172.

[0182] like Figure 20 and Figure 21 As shown, the electrode layer 152A extends along a first direction of the plurality of pixels 102A-p arranged in a matrix, and is provided in a manner shared by the plurality of pixels 102A-p arranged in the first direction. In addition, the plurality of electrode layers 152A are separated from each other by grooves 152A-g exposing the surfaces with ribs 172.

[0183] Each of the plurality of pixels 102A-p comprises a conductive alignment layer 122, a first nitride semiconductor layer 132, a second nitride semiconductor layer 142, and an electrode layer 152A, serving as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 122, and the other is the electrode layer 152A. The conductive alignment layer 122 and the electrode layer 152A are shared by the plurality of pixels 102A-p arranged in the first direction. Therefore, in the light-emitting device 102A, light emission can be controlled on a unit consisting of the plurality of pixels 102A-p arranged in the first direction.

[0184] <Modification 2 of the third embodiment>

[0185] Figure 22 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 102B according to one embodiment of the present invention. Specifically, Figure 22 This is a cross-sectional view of pixel 102B-p. The light-emitting device 102B is a variation of the light-emitting device 102. Therefore, when the configuration of the light-emitting device 102B is the same as that of the light-emitting device 102 or the light-emitting device 102A, its description is sometimes omitted.

[0186] like Figure 22 As shown, the light-emitting device 102B includes a substrate 112, a conductive alignment layer 122, a first nitride semiconductor layer 132, a second nitride semiconductor layer 142, an electrode layer 152B, and a rib 172.

[0187] Although not shown, electrode layer 152B, like electrode layer 152A, extends along the first direction of the matrix-arranged pixels 102B-p, and is configured to be shared by multiple pixels 102B-p arranged in the first direction. Furthermore, the multiple electrode layers 152B are separated from each other by grooves 152B-g exposing ribs 172.

[0188] Each of the multiple pixels 102B-p includes a conductive alignment layer 122, a first nitride semiconductor layer 132, a second nitride semiconductor layer 142, and an electrode layer 152B, serving as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 122, and the other is the electrode layer 152B. The conductive alignment layer 122 and the electrode layer 152B are shared by the multiple pixels 102B-p arranged in the first direction. Therefore, in the light-emitting device 102B, light emission can be controlled on a unit consisting of the multiple pixels 102B-p arranged in the first direction.

[0189] Furthermore, in the light-emitting device 102B, in the groove portion 152B-g, not only is the rib portion 172 exposed, but also a portion of the surface of the second nitride semiconductor layer 142 is exposed. Therefore, even if the electrode layer 152B is formed of a non-transparent material, light emission from the second nitride semiconductor layer 142 can be extracted in the upper surface direction.

[0190] <Modification 3 of the third embodiment>

[0191] Figure 23 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 102C according to one embodiment of the present invention. Specifically, Figure 23 This is a cross-sectional view of pixel 102C-p. The light-emitting device 102C is a variation of the light-emitting device 102. Therefore, when the configuration of the light-emitting device 102C is the same as that of the light-emitting devices 102 to 102B, its description is sometimes omitted.

[0192] like Figure 23 As shown, the light-emitting device 102C includes a substrate 112, a conductive alignment layer 122, a first nitride semiconductor layer 132, a second nitride semiconductor layer 142, an electrode layer 152C, and a rib 172.

[0193] Although not shown, electrode layer 152C, like electrode layer 152A, extends along a first direction of the plurality of pixels 102C-p arranged in a matrix, and is configured in a manner shared by the plurality of pixels 102C-p arranged in the first direction. In addition, the plurality of electrode layers 152C are separated from each other by grooves 152C-g with exposed ribs 172.

[0194] Each of the multiple pixels 102C-p comprises a conductive alignment layer 122, a first nitride semiconductor layer 132, a second nitride semiconductor layer 142, and an electrode layer 152C, serving as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 122, and the other is the electrode layer 152C. The conductive alignment layer 122 and the electrode layer 152C are shared by the multiple pixels 102C-p arranged in the first direction. Therefore, in the light-emitting device 102C, light emission can be controlled on a unit consisting of the multiple pixels 102C-p arranged in the first direction.

[0195] Furthermore, in the light-emitting device 102C, in the groove portions 152C-g, not only is the rib 172 exposed, but a portion of the surface of the second nitride semiconductor layer 142 is also exposed. Therefore, even if the electrode layer 152C is formed of a non-transparent material, light emission from the light-emitting layer of the second nitride semiconductor layer 142 can be extracted in the upper surface direction. Moreover, in the light-emitting device 101C, in the second direction orthogonal to the first direction, the width of the electrode layer 152C is smaller than the opening width of the rib 172. Therefore, in the light-emitting device 102C, more light emission can be extracted in the upper surface direction than in the light-emitting device 102B.

[0196] <Fourth Implementation>

[0197] Reference Figure 24 The present invention describes a light-emitting device 103 according to one embodiment. It should be noted that when the configuration of the light-emitting device 103 is the same as that of the light-emitting devices 100 to 102, its description may be omitted.

[0198] Figure 24 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 103 according to one embodiment of the present invention. Specifically, Figure 24 It is a cross-sectional view of pixel 103-p.

[0199] like Figure 24 As shown, the light-emitting device 103 includes a substrate 113, a conductive alignment layer 123, a first nitride semiconductor layer 133, a second nitride semiconductor layer 143, and an electrode layer 153.

[0200] A conductive alignment layer 123 is disposed on the substrate 113. Furthermore, the conductive alignment layer 123 extends along a first direction and is disposed in a manner shared by a plurality of pixels 103-p arranged in the first direction. The plurality of conductive alignment layers 123 are separated from each other by grooves 173-g exposing the substrate 113.

[0201] The first nitride semiconductor layer 133 and the second nitride semiconductor layer 143 are sequentially disposed on the conductive alignment layer 123. In addition, the first nitride semiconductor layer 133 and the second nitride semiconductor layer 143 are respectively disposed in an island shape on each pixel 103-p arranged in a matrix shape.

[0202] An electrode layer 153 is disposed on the second nitride semiconductor layer 143. Furthermore, the electrode layer 153 is disposed in an island-like configuration on each pixel 103-p arranged in a matrix. It should be noted that the position of the electrode layer 153 on the second nitride semiconductor layer 143 is not particularly limited. Additionally, the size of the electrode layer 153 is not particularly limited.

[0203] Each of the multiple pixels 103-p comprises a conductive alignment layer 123, a first nitride semiconductor layer 133, a second nitride semiconductor layer 143, and an electrode layer 153, serving as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 123, and the other is the electrode layer 153. The conductive alignment layer 123 is provided in a manner shared by the multiple pixels 103-p arranged in the first direction. On the other hand, the electrode layer 153 is provided on each pixel 103-p arranged in a matrix. In the light-emitting device 103, the multiple electrode layers 153 are bonded to a substrate, which is different from the substrate 113, and have a metal layer formed thereon, and are electrically connected to the metal layer. Therefore, in the light-emitting device 103, light emission can be controlled on a unit consisting of the multiple pixels 103-p arranged in the first direction. It should be noted that, for ease of explanation, the pixel 103-p sometimes includes the substrate 113.

[0204] In the light-emitting device 103, since a first nitride semiconductor layer 133 is provided on the conductive alignment layer 123, the crystallinity of the first nitride semiconductor layer 133 is improved. Furthermore, a second nitride semiconductor layer 143 is provided on the first nitride semiconductor layer 133, which has improved crystallinity, thereby also improving the crystallinity of the second nitride semiconductor layer 143, which includes the light-emitting layer. Therefore, the luminous efficiency of the light-emitting device 103 can be improved. Additionally, the conductive alignment layer 123 can be used as an electrode for an LED. Furthermore, by providing the conductive alignment layer 123 on the substrate 113, multiple light-emitting devices 103 can be manufactured using a large-area amorphous substrate as the substrate 113.

[0205] <Modification 1 of the 4th Embodiment>

[0206] Figure 25 This is a schematic diagram illustrating the configuration of a light-emitting device 103A according to one embodiment of the present invention. Specifically, Figure 25This is a cross-sectional view of pixel 103A-p. The light-emitting device 103A is a variation of the light-emitting device 103. Therefore, when the configuration of the light-emitting device 103A is the same as that of the light-emitting device 103, its description is sometimes omitted.

[0207] like Figure 25 As shown, the light-emitting device 103A includes a substrate 113, a conductive alignment layer 123A, a first nitride semiconductor layer 133A, a second nitride semiconductor layer 143, and an electrode layer 153.

[0208] The conductive alignment layer 123A also extends along the first direction of the matrix-arranged pixels 103A-p, just like the conductive alignment layer 123, and is set in a manner shared by the multiple pixels 103A-p arranged in the first direction.

[0209] A first nitride semiconductor layer 133A and a second nitride semiconductor layer 143 are sequentially disposed on the conductive alignment layer 123A. Furthermore, the first nitride semiconductor layer 133 and the second nitride semiconductor layer 143 are respectively disposed in an island-like configuration on each of the pixels 103A-p arranged in a matrix. The stack of multiple first nitride semiconductor layers 133A and second nitride semiconductor layers 143 is separated from each other by trenches 173-g. It should be noted that the sides of the conductive alignment layer 123A are covered by the first nitride semiconductor layer 133A.

[0210] Each of the multiple pixels 103A-p comprises a conductive alignment layer 123A, a first nitride semiconductor layer 133A, a second nitride semiconductor layer 143, and an electrode layer 153, serving as an LED. Here, one of the electrodes of the LED is the conductive alignment layer 123A, and the other is the electrode layer 153. The conductive alignment layer 123A is provided in a manner shared by the multiple pixels 103-p arranged in the first direction. On the other hand, the electrode layers 153 are respectively provided on the multiple pixels 103A-p arranged in a matrix. In the light-emitting device 103A, the multiple electrode layers 153 are bonded to a substrate, different from the substrate 113, on which a metal layer is formed, and are electrically connected to the metal layer. Therefore, in the light-emitting device 103A, light emission can be controlled on a unit consisting of the multiple pixels 103A-p arranged in the first direction.

[0211] <Fifth Implementation>

[0212] Reference Figures 26-27H This invention describes a light-emitting device 200 according to one embodiment. It should be noted that when the configuration of the light-emitting device 200 is the same as that of the light-emitting device 100, its description may be omitted.

[0213] [1. Composition of the light-emitting device 200]

[0214] Figure 26 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 200 according to one embodiment of the present invention. Specifically, Figure 26 It is a cross-sectional view at 200 pixels.

[0215] like Figure 26 As shown, the light-emitting device 200 includes a substrate 210, an insulating alignment layer 220, a first nitride semiconductor layer 230, a second nitride semiconductor layer 240, a first electrode layer 250, a second electrode layer 260, a first rib 270, and a second rib 280.

[0216] An insulating alignment layer 220 is disposed on the substrate 210. Furthermore, the insulating alignment layer 220 is disposed in a manner shared by multiple pixels 200-p arranged in a matrix.

[0217] A first nitride semiconductor layer 230 and a second nitride semiconductor layer 240 are sequentially disposed on an insulating alignment layer 220. Furthermore, the first nitride semiconductor layer 230 and the second nitride semiconductor layer 240 are respectively disposed in an island-like configuration on each pixel 200-p arranged in a matrix. The second nitride semiconductor layer 240 overlaps with the first nitride semiconductor layer 230 and has a smaller area than the first nitride semiconductor layer 230 when viewed from above. That is, the stack of the first nitride semiconductor layer 230 and the second nitride semiconductor layer 240 includes the recess 240-r exposed by the first nitride semiconductor layer 230.

[0218] The first electrode layer 250 is disposed in the recess 240-r and is electrically connected to the first nitride semiconductor layer 230. In addition, the first electrode layer 250 extends along the first direction and is disposed in a manner shared by a plurality of pixels 200-p arranged in the first direction.

[0219] The first rib 270 is disposed on the insulating alignment layer 220 in a grid pattern. The second rib 280 is disposed on the first nitride semiconductor layer 230, the second nitride semiconductor layer 240, and the first electrode layer 250, covering the first nitride semiconductor layer 230, the second nitride semiconductor layer 240, the first electrode layer 250, and the first rib 270. The second rib 280 includes an opening 280-o exposed in the second nitride semiconductor layer 240. It should be noted that the plurality of pixels 200-p are divided by the first rib 270 and the second rib 280.

[0220] The second electrode layer 260 is disposed on the second nitride semiconductor layer 240 and the second rib 280 in a manner that covers the opening 280-o. Furthermore, the second electrode layer 260 is disposed in a manner shared by the pixels 200-p arranged in a matrix. Additionally, the second electrode layer 260 is electrically connected to the second nitride semiconductor layer 240.

[0221] The following describes the details of each component of the light-emitting device 200.

[0222] Since substrate 210 is the same as substrate 110, the description is omitted here.

[0223] Like the conductive alignment layer 120, the insulating alignment layer 220 can improve the crystallinity of the nitride semiconductor film formed on the insulating alignment layer 220. However, unlike the conductive alignment layer 120, the insulating alignment layer 220 is insulating. For example, aluminum nitride (AlN), aluminum oxide (Al2O3), lithium niobate (LiNbO), BiLaTiO, SrFeO, SrFeO, BiFeO, BaFeO, ZnFeO, PMnN-PZT, or bioapatite (BAp) can be used as the insulating alignment layer 220. In particular, aluminum nitride (AlN) is preferred as the insulating alignment layer 220.

[0224] The first nitride semiconductor layer 230 includes the first semiconductor layer of the LED. The first nitride semiconductor layer 230 on the insulating alignment layer 220 includes a nitride semiconductor with a highly crystalline c-axis orientation. It should be noted that the first nitride semiconductor layer 230 includes not only the first semiconductor layer but also a buffer layer containing undoped gallium nitride. In the case where the first nitride semiconductor layer 230 is a stack of a buffer layer and a first semiconductor layer, the first semiconductor layer is stacked on the buffer layer in a manner adjacent to the second nitride semiconductor layer 240.

[0225] The second nitride semiconductor layer 240 is the same as the second nitride semiconductor layer 140, so the description is omitted here.

[0226] The first electrode layer 250 and the second electrode layer 260 function as electrodes for the LED. The first electrode layer 250 and the second electrode layer 260 can each be made of transparent oxides such as indium tin oxide, indium zinc oxide, or zinc oxide. Alternatively, the first electrode layer 250 can be made of metals such as indium, palladium, or gold.

[0227] In the light-emitting device 200, when the first semiconductor layer of the first nitride semiconductor layer 230 is an n-type semiconductor layer and the second semiconductor layer of the second nitride semiconductor layer 240 is a p-type semiconductor layer, the first electrode layer 250 and the second electrode layer 260 are an n-type electrode and a p-type electrode, respectively. On the other hand, when the first semiconductor layer of the first nitride semiconductor layer 230 is a p-type semiconductor layer and the second semiconductor layer of the second nitride semiconductor layer 240 is an n-type semiconductor layer, the first electrode layer 250 and the second electrode layer 260 are a p-type electrode and an n-type electrode, respectively.

[0228] Furthermore, when the light is emitted from the lower surface of the light-emitting device 200, the insulating alignment layer 220 is preferably transparent or semi-transparent. On the other hand, when the light is emitted from the upper surface of the light-emitting device 200, the second electrode layer 260 is preferably transparent or semi-transparent.

[0229] The first rib 270 and the second rib 280 are the same as the first rib 160 and the second rib 170, respectively, so the description is omitted here.

[0230] Each of the multiple pixels 200-p includes a first electrode layer 250, a first nitride semiconductor layer 230, a second nitride semiconductor layer 240, and a second electrode layer 260 as an LED. Here, one of the electrodes of the LED is the first electrode layer 250, and the other is the second electrode layer 260. The first electrode layer 250 is shared by the multiple pixels 200-p arranged in the first direction. On the other hand, the second electrode layer 260 is shared by the multiple pixels 200-p arranged in a matrix. Therefore, in the light-emitting device 200, light emission can be controlled on a unit consisting of the multiple pixels 200-p arranged in the first direction. It should be noted that, for ease of explanation, the pixel 200-p sometimes includes a substrate 210.

[0231] [2. Manufacturing method of light-emitting device 200]

[0232] Reference Figures 27A to 27H The following describes a method for manufacturing a light-emitting device 200 according to one embodiment of the present invention. Figures 27A to 27H This is a schematic cross-sectional view illustrating a method for manufacturing a light-emitting device 200 according to one embodiment of the present invention.

[0233] First, such as Figure 27A As shown, an insulating alignment layer 220 is formed on the substrate 210. The insulating alignment layer 220 can be formed using any method (apparatus) such as sputtering or CVD.

[0234] Next, as Figure 27B As shown, a first rib 270 including an opening exposing the insulating alignment layer 220 is formed on the insulating alignment layer 220. The first rib 270 is formed by depositing an inorganic or organic material into a film and then patterning the inorganic or organic material using photolithography.

[0235] Next, as Figure 27CAs shown, a first nitride semiconductor film 230-a is formed on the insulating alignment layer 220 and the first rib 270 in such a way that it covers the opening of the first rib 270. The first nitride semiconductor film 230-a can be formed by sputtering. In the first nitride semiconductor film 230-a, the region in contact with the insulating alignment layer 220 has a highly crystalline c-axis orientation.

[0236] Next, as Figure 27D As shown, a second nitride semiconductor film 240-a is formed on the first nitride semiconductor film 230-a. The second nitride semiconductor film 240-a can be formed by sputtering. Since the second nitride semiconductor film 240-a is formed on the first nitride semiconductor film 230-a which has a highly crystalline c-axis orientation, the second nitride semiconductor film 240-a also has a highly crystalline c-axis orientation, just like the first nitride semiconductor film 230-a.

[0237] Next, as Figure 27E As shown, the first nitride semiconductor film 230-a and the second nitride semiconductor film 240-a are patterned using photolithography to form island-shaped first nitride semiconductor layer 230 and third nitride semiconductor film 240-b.

[0238] Next, as Figure 27F As shown, the third nitride semiconductor film 240-b is patterned using photolithography to form a recess 240-r exposing the first nitride semiconductor layer 230. Additionally, the second nitride semiconductor layer 240 is formed through this patterning.

[0239] Next, as Figure 27G As shown, a first electrode layer 250 is formed on the first nitride semiconductor layer 230 in the recess 240-r. The first electrode layer 250 is formed by depositing a metal material and patterning the metal material using photolithography.

[0240] Next, as Figure 27H As shown, a first nitride semiconductor layer 230, a second nitride semiconductor layer 240, and a first electrode layer 250 are covered. A second rib 280, including an opening 280-o, is formed on the upper surface of the second nitride semiconductor layer 240. The opening 280-o is formed using photolithography.

[0241] Finally, by forming a second electrode layer 260 covering the opening 280-o and the second rib 280, a manufacturing process is achieved. Figure 26 The light-emitting device 200 shown.

[0242] In the light-emitting device 200, since the first nitride semiconductor layer 230 is provided on the insulating alignment layer 220, the crystallinity of the first nitride semiconductor layer 230 is improved. Furthermore, by providing the second nitride semiconductor layer 240 on the first nitride semiconductor layer 230, whose crystallinity has been improved, the crystallinity of the second nitride semiconductor layer 240, which includes the light-emitting layer, is also improved. Therefore, the luminous efficiency of the light-emitting device 200 can be improved. Additionally, by providing the insulating alignment layer 220 on the substrate 210, multiple light-emitting devices 200 can be manufactured using a large-area amorphous substrate as the substrate 210.

[0243] <Modification 1 of the 5th Embodiment>

[0244] Figure 28 and Figure 29 These are schematic cross-sectional and top views illustrating the configuration of a light-emitting device 200A according to one embodiment of the present invention. Specifically, Figure 28 This is a cross-sectional view at pixel 200A-p. It should be noted that, for ease of explanation, [the image is...]. Figure 29 In the diagram, the second nitride semiconductor layer 240 and the first electrode layer 250 are shown in dashed lines. The light-emitting device 200A is a variation of the light-emitting device 200. Therefore, when the configuration of the light-emitting device 200A is the same as that of the light-emitting device 200, its description is sometimes omitted.

[0245] like Figure 28 As shown, the light-emitting device 200A includes a substrate 210, an insulating alignment layer 220, a first nitride semiconductor layer 230, a second nitride semiconductor layer 240, a first electrode layer 250, a second electrode layer 260A, a first rib 270, and a second rib 280.

[0246] like Figure 29 As shown, the second electrode layer 260A extends along a first direction of the plurality of pixels 200A-p arranged in a matrix, and is configured to be shared by the plurality of pixels 200A-p arranged in the first direction. The second electrode layer 260A is connected to the second nitride semiconductor layer 240 via an opening 280-o. In addition, when viewed from above, the second electrode layer 260A does not overlap with the first electrode layer 250.

[0247] Each of the multiple pixels 200A-p includes a first electrode layer 250, a first nitride semiconductor layer 230, a second nitride semiconductor layer 240, and a second electrode layer 260A as an LED. Here, one of the electrodes of the LED is the first electrode layer 250, and the other is the second electrode layer 260A. The first electrode layer 250 and the second electrode layer 260A are shared by the multiple pixels 200A-p arranged in the first direction. Therefore, in the light-emitting device 200A, light emission can be controlled on a unit consisting of the multiple pixels 200A-p arranged in the first direction.

[0248] <Modification 2 of the 5th Embodiment>

[0249] Figure 30 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 200B according to one embodiment of the present invention. Specifically, Figure 30 This is a cross-sectional view of pixel 200B-p. The light-emitting device 200B is a variation of the light-emitting device 200. Therefore, when the configuration of the light-emitting device 200B is the same as that of the light-emitting device 200 or the light-emitting device 200A, its description is sometimes omitted.

[0250] like Figure 30 As shown, the light-emitting device 200B includes a substrate 210, an insulating alignment layer 220, a first nitride semiconductor layer 230, a second nitride semiconductor layer 240, a first electrode layer 250, a second electrode layer 260B, a first rib 270, and a second rib 280.

[0251] Like the first electrode layer 250, the second electrode layer 260B extends along a first direction of the plurality of pixels 200B-p arranged in a matrix, and is configured in a manner shared by the plurality of pixels 200B-p arranged in the first direction. The second electrode layer 260B is in contact with the second nitride semiconductor layer 240 via an opening 280-o, but does not completely cover the opening 280-o. Therefore, a portion of the upper surface of the second nitride semiconductor layer 240 is exposed in the opening 280-o. In addition, when viewed from above, the second electrode layer 260B does not overlap with the first electrode layer 250.

[0252] Each of the multiple pixels 200B-p includes a first electrode layer 250, a first nitride semiconductor layer 230, a second nitride semiconductor layer 240, and a second electrode layer 260B as an LED. Here, one of the electrodes of the LED is the first electrode layer 250, and the other is the second electrode layer 260B. The first electrode layer 250 and the second electrode layer 260B are shared by the multiple pixels 200B-p arranged in the first direction. Therefore, in the light-emitting device 200B, light emission can be controlled on a unit consisting of the multiple pixels 200B-p arranged in the first direction.

[0253] Furthermore, in the light-emitting device 200B, a portion of the second nitride semiconductor layer 240 is not covered by the second electrode layer 260B. Therefore, when light is emitted from the light-emitting device 200B towards its upward surface, the second electrode layer 260B can be made of either a transparent conductive material or a non-transparent metallic material. Additionally, since light can also be emitted from the opening 280-o, the luminous efficiency of the light-emitting device 200B is improved.

[0254] <Modification 3 of the 5th Embodiment>

[0255] Figure 31 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 200C according to one embodiment of the present invention. Specifically, Figure 31 This is a cross-sectional view of pixel 200C-p. The light-emitting device 200C is a variation of the light-emitting device 200. Therefore, when the configuration of the light-emitting device 200C is the same as that of the light-emitting devices 200 to 200B, its description is sometimes omitted.

[0256] like Figure 31 As shown, the light-emitting device 200C includes a substrate 210, an insulating alignment layer 220, a first nitride semiconductor layer 230, a second nitride semiconductor layer 240, a first electrode layer 250, a second electrode layer 260C, a first rib 270, and a second rib 280.

[0257] Like the first electrode layer 250, the second electrode layer 260C extends along a first direction of the plurality of pixels 200C-p arranged in a matrix, and is configured in a manner shared by the plurality of pixels 200C-p arranged in the first direction. The second electrode layer 260C is in contact with the second nitride semiconductor layer 240 via an opening 280-o, but does not completely cover the opening 280-o. Therefore, a portion of the upper surface of the second nitride semiconductor layer 240 is exposed in the opening 280-o. In addition, in a second direction orthogonal to the first direction, the width of the second electrode layer 260C is smaller than the maximum width of the opening 280-o. Furthermore, when viewed from above, the second electrode layer 260C does not overlap with the first electrode layer 250.

[0258] Each of the multiple pixels 200C-p includes a first electrode layer 250, a first nitride semiconductor layer 230, a second nitride semiconductor layer 240, and a second electrode layer 260C as an LED. Here, one of the electrodes of the LED is the first electrode layer 250, and the other is the second electrode layer 260C. The first electrode layer 250 and the second electrode layer 260C are shared by the multiple pixels 200C-p arranged in the first direction. Therefore, in the light-emitting device 200C, light emission can be controlled on a unit consisting of the multiple pixels 200C-p arranged in the first direction.

[0259] Furthermore, in the light-emitting device 200C, a portion of the second nitride semiconductor layer 240 is not covered by the second electrode layer 260C. Therefore, when the light-emitting device 200C emits light in the direction of its upper surface, the second electrode layer 260C can be made of either a transparent conductive material or a non-transparent metallic material. Additionally, since light can also be emitted from the opening 280-o, the luminous efficiency of the light-emitting device 200C is improved.

[0260] <Modification 4 of the 5th Embodiment>

[0261] Figure 32 and Figure 33 These are schematic cross-sectional and top views illustrating the configuration of a light-emitting device 200D according to one embodiment of the present invention. Specifically, Figure 32 This is a cross-sectional view at 200 pixels (D-p). It should be noted that, for ease of explanation, [the text is incomplete and requires further context]. Figure 33 In the diagram, the second nitride semiconductor layer 240 and the first electrode layer 250 are shown in dashed lines. The light-emitting device 200D is a variation of the light-emitting device 200. Therefore, when the configuration of the light-emitting device 200D is the same as that of the light-emitting devices 200 to 200C, its description is sometimes omitted.

[0262] like Figure 32 As shown, the light-emitting device 200D includes a substrate 210, an insulating alignment layer 220, a first nitride semiconductor layer 230, a second nitride semiconductor layer 240, a first electrode layer 250, a second electrode layer 260D, a first rib 270, and a second rib 280.

[0263] like Figure 33 As shown, the second electrode layer 260D extends along a second direction orthogonal to the first direction, and is configured to be shared by a plurality of pixels 200D-p arranged in the second direction. The second electrode layer 260D is connected to the second nitride semiconductor layer 240 via an opening 280-o. Furthermore, when viewed from above, the second electrode layer 260D intersects with the first electrode layer 250 and is separated from the first electrode layer 250 by a second rib 280.

[0264] Each of the multiple pixels 200D-p includes a first electrode layer 250, a first nitride semiconductor layer 230, a second nitride semiconductor layer 240, and a second electrode layer 260D as an LED. Here, one of the electrodes of the LED is the first electrode layer 250, and the other is the second electrode layer 260D. The first electrode layer 250 is shared by the multiple pixels 200D-p arranged in a first direction. On the other hand, the second electrode layer 260D is shared by the multiple pixels 200D-p arranged in a second direction. Therefore, in the light-emitting device 200D, the light emission of the pixels 200D-p at the intersection of the first electrode layer 250 and the second electrode layer 260 can be controlled. That is, in the light-emitting device 200D, the light emission of the pixels 200D-p can be controlled by passive driving.

[0265] <Sixth Implementation>

[0266] Reference Figure 34 and Figure 35 This invention describes a light-emitting device 201 according to one embodiment. It should be noted that when the configuration of the light-emitting device 201 is the same as that of the light-emitting device 200, its description may sometimes be omitted.

[0267] Figure 34 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 201 according to one embodiment of the present invention. Specifically, Figure 34 This is a cross-sectional view of pixel 201-p. Additionally, Figure 35 This is a schematic top view illustrating the configuration of a light-emitting device 201 according to one embodiment of the present invention. It should be noted that, for ease of explanation, [the following text is missing: "In..."] Figure 35 Only the insulating alignment layer 221, the first nitride semiconductor layer 231, and the first rib 271 are shown.

[0268] like Figure 34 As shown, the light-emitting device 201 includes a substrate 211, an insulating alignment layer 221, a first nitride semiconductor layer 231, a second nitride semiconductor layer 241, a first electrode layer 251, a second electrode layer 261, a first rib 271, and a second rib 281.

[0269] An insulating alignment layer 221 is disposed on the substrate 211. Additionally, as... Figure 35 As shown, the insulating alignment layer 221 is disposed in an island shape on each pixel 201-p configured in a matrix shape.

[0270] A first nitride semiconductor layer 231 and a second nitride semiconductor layer 241 are sequentially disposed on an insulating alignment layer 221. Furthermore, the first nitride semiconductor layer 231 and the second nitride semiconductor layer 241 are respectively disposed in an island-like configuration on each of the pixels 201-p arranged in a matrix. The second nitride semiconductor layer 241 overlaps with the first nitride semiconductor layer 231 and has an area smaller than that of the first nitride semiconductor layer 231 when viewed from above. That is, the stack of the first nitride semiconductor layer 231 and the second nitride semiconductor layer 241 includes a recess 241-r exposing the first nitride semiconductor layer 231.

[0271] The first electrode layer 251 is disposed in the recess 241-r and is electrically connected to the first nitride semiconductor layer 231. In addition, the first electrode layer 251 extends along the first direction and is disposed in a manner shared by a plurality of pixels 201-p arranged in the first direction.

[0272] The first rib 271 is disposed on the substrate 211 in a grid pattern, filling the grooves between the insulating alignment layers 221. The second rib 281 is disposed on the first semiconductor nitride layer 231, the second semiconductor nitride layer 241, the first electrode layer 251, and the first rib 271, covering the first semiconductor nitride layer 231, the second semiconductor nitride layer 241, and the first electrode layer 251. The second rib 281 includes an opening 281-o exposing the second semiconductor nitride layer 241. It should be noted that the plurality of pixels 201-p are divided by the first rib 271 and the second rib 281.

[0273] The second electrode layer 261 is disposed on the second nitride semiconductor layer 241 and the second rib 281 in a manner that covers the opening 281-o. Furthermore, the second electrode layer 261 is disposed in a manner shared by the pixels 201-p arranged in a matrix. Additionally, the second electrode layer 261 is electrically connected to the second nitride semiconductor layer 241.

[0274] Each of the multiple pixels 201-p includes a first electrode layer 251, a first nitride semiconductor layer 231, a second nitride semiconductor layer 241, and a second electrode layer 261 as an LED. Here, one of the electrodes of the LED is the first electrode layer 251, and the other is the second electrode layer 261. The first electrode layer 251 is shared by the multiple pixels 201-p arranged in the first direction. On the other hand, the second electrode layer 261 is shared by the multiple pixels 201-p arranged in a matrix. Therefore, in the light-emitting device 201, light emission can be controlled on a unit consisting of the multiple pixels 201-p arranged in the first direction. It should be noted that, for ease of explanation, the pixel 201-p sometimes includes a substrate 211.

[0275] In the light-emitting device 201, since the first nitride semiconductor layer 231 is provided on the insulating alignment layer 221, the crystallinity of the first nitride semiconductor layer 231 is improved. Furthermore, by providing the second nitride semiconductor layer 241 on the first nitride semiconductor layer 231 with improved crystallinity, the crystallinity of the second nitride semiconductor layer 241, which includes the light-emitting layer, is also improved. Therefore, the luminous efficiency of the light-emitting device 201 can be improved. Additionally, by providing the insulating alignment layer 221 on the substrate 211, multiple light-emitting devices 201 can be manufactured using a large-area amorphous substrate as the substrate 211.

[0276] <Modification 1 of the 6th Embodiment>

[0277] Figure 36 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 201A according to one embodiment of the present invention. Specifically, Figure 36 This is a cross-sectional view of pixel 201A-p. The light-emitting device 201A is a variation of the light-emitting device 201. Therefore, when the configuration of the light-emitting device 201A is the same as that of the light-emitting device 201, its description is sometimes omitted.

[0278] like Figure 36 As shown, the light-emitting device 201A includes a substrate 211, an insulating alignment layer 221, a first nitride semiconductor layer 231, a second nitride semiconductor layer 241, a first electrode layer 251, a second electrode layer 261A, a first rib 271, and a second rib 281.

[0279] Like the first electrode layer 251, the second electrode layer 261A extends along the first direction of the matrix-arranged pixels 201A-p, and is configured to be shared by multiple pixels 201A-p arranged in the first direction. The second electrode layer 261A is connected to the second nitride semiconductor layer 241 via an opening 281-o. Furthermore, when viewed from above, the second electrode layer 261A does not overlap with the first electrode layer 251.

[0280] Each of the multiple pixels 201A-p includes a first electrode layer 251, a first nitride semiconductor layer 231, a second nitride semiconductor layer 241, and a second electrode layer 261A as an LED. Here, one of the electrodes of the LED is the first electrode layer 251, and the other is the second electrode layer 261A. The first electrode layer 251 and the second electrode layer 261A are shared by the multiple pixels 201A-p arranged in the first direction. Therefore, in the light-emitting device 201A, light emission can be controlled on a unit consisting of the multiple pixels 201A-p arranged in the first direction.

[0281] <Modification 2 of the 6th Embodiment>

[0282] Figure 37 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 201B according to one embodiment of the present invention. Specifically, Figure 37 This is a cross-sectional view of pixel 201B-p. The light-emitting device 201B is a variation of the light-emitting device 201. Therefore, when the configuration of the light-emitting device 201B is the same as that of the light-emitting device 201 or the light-emitting device 201A, its description is sometimes omitted.

[0283] like Figure 37 As shown, the light-emitting device 201B includes a substrate 211, an insulating alignment layer 221, a first nitride semiconductor layer 231, a second nitride semiconductor layer 241, a first electrode layer 251, a second electrode layer 261B, a first rib 271, and a second rib 281.

[0284] Like the first electrode layer 251, the second electrode layer 261B extends along a first direction of the matrix-arranged pixels 201B-p, and is configured to be shared by multiple pixels 201B-p arranged in the first direction. The second electrode layer 261B is connected to the second nitride semiconductor layer 241 via an opening 281-o, but does not completely cover the opening 281-o. Therefore, a portion of the upper surface of the second nitride semiconductor layer 241 is exposed in the opening 281-o. Furthermore, when viewed from above, the second electrode layer 261B does not overlap with the first electrode layer 251.

[0285] Each of the multiple pixels 201B-p includes a first electrode layer 251, a first nitride semiconductor layer 231, a second nitride semiconductor layer 241, and a second electrode layer 261B as an LED. Here, one of the electrodes of the LED is the first electrode layer 251, and the other is the electrode layer 261B. The first electrode layer 251 and the second electrode layer 261B are shared by the multiple pixels 201B-p arranged in the first direction. Therefore, in the light-emitting device 201B, light emission can be controlled on a unit consisting of the multiple pixels 201B-p arranged in the first direction.

[0286] Furthermore, in the light-emitting device 201B, a portion of the second nitride semiconductor layer 241 is not covered by the second electrode layer 261B. Therefore, when light is emitted from the light-emitting device 201B towards its upward surface, the second electrode layer 261B can be made of either a transparent conductive material or a non-transparent metallic material. Additionally, since light can also be emitted from the opening 281-o, the luminous efficiency of the light-emitting device 201B is improved.

[0287] <Modification 3 of the 6th Embodiment>

[0288] Figure 38This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 201C according to one embodiment of the present invention. Specifically, Figure 38 This is a cross-sectional view of pixel 201C-p. The light-emitting device 201C is a variation of the light-emitting device 201. Therefore, when the configuration of the light-emitting device 201C is the same as that of the light-emitting devices 201 to 201B, its description is sometimes omitted.

[0289] like Figure 38 As shown, the light-emitting device 201C includes a substrate 211, an insulating alignment layer 221, a first nitride semiconductor layer 231, a second nitride semiconductor layer 241, a first electrode layer 251, a second electrode layer 261C, a first rib 271, and a second rib 281.

[0290] Like the first electrode layer 251, the second electrode layer 261C extends along a first direction of the plurality of pixels 201C-p arranged in a matrix, and is configured in a manner shared by the plurality of pixels 201C-p arranged in the first direction. The second electrode layer 261C is in contact with the second nitride semiconductor layer 241 via an opening 281-o, but does not completely cover the opening 281-o. Therefore, a portion of the upper surface of the second nitride semiconductor layer 241 is exposed in the opening 281-o. In addition, in a second direction orthogonal to the first direction, the width of the second electrode layer 261C is smaller than the maximum width of the opening 281-o. Furthermore, when viewed from above, the second electrode layer 261C does not overlap with the first electrode layer 251.

[0291] Each of the multiple pixels 201C-p includes a first electrode layer 251, a first nitride semiconductor layer 231, a second nitride semiconductor layer 241, and a second electrode layer 261C as an LED. Here, one of the electrodes of the LED is the first electrode layer 251, and the other is the second electrode layer 261C. The first electrode layer 251 and the second electrode layer 261C are shared by the multiple pixels 201C-p arranged in the first direction. Therefore, in the light-emitting device 201C, light emission can be controlled on a unit consisting of the multiple pixels 201C-p arranged in the first direction.

[0292] Furthermore, in the light-emitting device 201C, a portion of the second nitride semiconductor layer 241 is not covered by the second electrode layer 261C. Therefore, when light is emitted from the light-emitting device 201C towards the upward surface, the second electrode layer 261C can be made of either a transparent conductive material or a non-transparent metallic material. Additionally, since light can also be emitted from the opening 281-o, the luminous efficiency of the light-emitting device 201C is improved.

[0293] <Seventh Implementation>

[0294] Reference Figure 39 The configuration of a light-emitting device 202 according to one embodiment of the present invention will be described. It should be noted that when the configuration of the light-emitting device 202 is the same as that of the light-emitting device 200 or the light-emitting device 201, its description may be omitted.

[0295] Figure 39 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 202 according to one embodiment of the present invention. Specifically, Figure 39 This is a cross-sectional view of pixel 202-p.

[0296] like Figure 39 As shown, the light-emitting device 202 includes a substrate 212, an insulating alignment layer 222, a first nitride semiconductor layer 232, a second nitride semiconductor layer 242, a first electrode layer 252, a second electrode layer 262, and a rib 282.

[0297] An insulating alignment layer 222 is disposed on the substrate 212. In addition, the insulating alignment layer 222 is disposed in an island shape on each pixel 202-p arranged in a matrix.

[0298] A first nitride semiconductor layer 232 and a second nitride semiconductor layer 242 are sequentially disposed on an insulating alignment layer 222. Furthermore, the first nitride semiconductor layer 232 and the second nitride semiconductor layer 242 are respectively disposed in an island-like configuration on each pixel 202-p arranged in a matrix. The second nitride semiconductor layer 242 overlaps with the first nitride semiconductor layer 232 and, when viewed from above, has a smaller area than the first nitride semiconductor layer 232. That is, the stack of the first nitride semiconductor layer 232 and the second nitride semiconductor layer 242 includes a recess 242-r exposing the first nitride semiconductor layer 232.

[0299] A first electrode layer 252 is disposed in the recess 242-r and electrically connected to the first nitride semiconductor layer 232. Furthermore, the first electrode layer 252 extends along a first direction and is disposed in a manner shared by a plurality of pixels 202-p arranged in the first direction. Therefore, in the first direction, the first electrode layer 252 is in contact not only with the upper surface of the first nitride semiconductor layer 232 but also with the side surface of the first nitride semiconductor layer 232.

[0300] Ribs 282 cover the first nitride semiconductor layer 232, the second nitride semiconductor layer 242, and the first electrode layer 252, and are disposed on the substrate 212 in a grid pattern to fill the trenches between the insulating alignment layer 222 and the first nitride semiconductor layer 232. Additionally, ribs 282 include openings 282-o that expose the second nitride semiconductor layer 242. It should be noted that the plurality of pixels 202-p are divided by ribs 282.

[0301] The second electrode layer 262 is disposed on the second nitride semiconductor layer 242 and the rib 282 in a manner that covers the opening 282-o. Furthermore, the second electrode layer 262 is disposed in a manner shared by the pixels 202-p arranged in a matrix. Additionally, the second electrode layer 262 is electrically connected to the second nitride semiconductor layer 242.

[0302] Each of the multiple pixels 202-p includes a first electrode layer 252, a first nitride semiconductor layer 232, a second nitride semiconductor layer 242, and a second electrode layer 262 as an LED. Here, one of the electrodes of the LED is the first electrode layer 252, and the other is the second electrode layer 262. The first electrode layer 252 is shared by the multiple pixels 202-p arranged in the first direction. On the other hand, the second electrode layer 262 is shared by the multiple pixels 202-p arranged in a matrix. Therefore, in the light-emitting device 202, light emission can be controlled on a unit consisting of the multiple pixels 202-p arranged in the first direction. It should be noted that, for ease of explanation, the pixel 202-p sometimes includes a substrate 212.

[0303] In the light-emitting device 202, since the first nitride semiconductor layer 232 is provided on the insulating alignment layer 222, the crystallinity of the first nitride semiconductor layer 232 is improved. Furthermore, by providing the second nitride semiconductor layer 242 on the first nitride semiconductor layer 232, whose crystallinity has been improved, the crystallinity of the second nitride semiconductor layer 242, which includes the light-emitting layer, is also improved. Therefore, the luminous efficiency of the light-emitting device 202 can be improved. Additionally, by providing the insulating alignment layer 222 on the substrate 212, multiple light-emitting devices 202 can be manufactured using a large-area amorphous substrate as the substrate 212.

[0304] <Modification 1 of the 7th Embodiment>

[0305] Figure 40 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 202A according to one embodiment of the present invention. Specifically, Figure 40 This is a cross-sectional view of pixel 202A-p. The light-emitting device 202A is a variation of the light-emitting device 202. Therefore, when the configuration of the light-emitting device 202A is the same as that of the light-emitting device 202, its description is sometimes omitted.

[0306] like Figure 40 As shown, the light-emitting device 202A includes a substrate 212, an insulating alignment layer 222, a first nitride semiconductor layer 232, a second nitride semiconductor layer 242, a first electrode layer 252, a second electrode layer 262A, and a rib 282.

[0307] Like the first electrode layer 252, the second electrode layer 262A extends along the first direction of the matrix-arranged pixels 202A-p, and is configured to be shared by a plurality of pixels 202A-p arranged in the first direction. The second electrode layer 262A is connected to the second nitride semiconductor layer 242 via an opening 281-o. Furthermore, when viewed from above, the second electrode layer 262A does not overlap with the first electrode layer 252.

[0308] Each of the multiple pixels 202A-p includes a first electrode layer 252, a first nitride semiconductor layer 232, a second nitride semiconductor layer 242, and a second electrode layer 262A as an LED. Here, one of the electrodes of the LED is the first electrode layer 252, and the other is the second electrode layer 262A. The first electrode layer 252 and the second electrode layer 262A are shared by the multiple pixels 202A-p arranged in the first direction. Therefore, in the light-emitting device 202A, light emission can be controlled on a unit consisting of the multiple pixels 202A-p arranged in the first direction.

[0309] <Modification 2 of the 7th Embodiment>

[0310] Figure 41 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 202B according to one embodiment of the present invention. Specifically, Figure 41 This is a cross-sectional view of pixel 202B-p. The light-emitting device 202B is a variation of the light-emitting device 202. Therefore, when the configuration of the light-emitting device 202B is the same as that of the light-emitting device 202 or the light-emitting device 202A, its description is sometimes omitted.

[0311] like Figure 41 As shown, the light-emitting device 202B includes a substrate 212, an insulating alignment layer 222, a first nitride semiconductor layer 232, a second nitride semiconductor layer 242, a first electrode layer 252, a second electrode layer 262B, and a rib 282.

[0312] Like the first electrode layer 252, the second electrode layer 262B extends along the first direction of the matrix-arranged pixels 202B-p, and is configured to be shared by a plurality of pixels 201B-p arranged in the first direction. The second electrode layer 262B is in contact with the second nitride semiconductor layer 242 via an opening 282-o, but does not completely cover the opening 282-o. Therefore, a portion of the upper surface of the second nitride semiconductor layer 242 is exposed in the opening 282-o. In addition, when viewed from above, the second electrode layer 262B does not overlap with the first electrode layer 252.

[0313] Each of the multiple pixels 202B-p includes a first electrode layer 252, a first nitride semiconductor layer 232, a second nitride semiconductor layer 242, and a second electrode layer 262B as an LED. Here, one of the electrodes of the LED is the first electrode layer 252, and the other is the second electrode layer 262B. The first electrode layer 252 and the second electrode layer 262B are shared by the multiple pixels 202B-p arranged in the first direction. Therefore, in the light-emitting device 202B, light emission can be controlled on a unit consisting of the multiple pixels 202B-p arranged in the first direction.

[0314] Furthermore, in the light-emitting device 202B, a portion of the second nitride semiconductor layer 242 is not covered by the second electrode layer 262B. Therefore, when light is emitted from the light-emitting device 202B towards its upward surface, the second electrode layer 262B can be made of either a transparent conductive material or a non-transparent metallic material. Additionally, since light can also be emitted from the opening 282-o, the luminous efficiency of the light-emitting device 202B is improved.

[0315] <Modification 3 of the 7th Embodiment>

[0316] Figure 42 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 202C according to one embodiment of the present invention. Specifically, Figure 42 This is a cross-sectional view of pixel 202C-p. The light-emitting device 202C is a variation of the light-emitting device 202. Therefore, when the configuration of the light-emitting device 202C is the same as that of the light-emitting devices 202 to 202B, its description is sometimes omitted.

[0317] like Figure 42 As shown, the light-emitting device 202C includes a substrate 212, an insulating alignment layer 222, a first nitride semiconductor layer 232, a second nitride semiconductor layer 242, a first electrode layer 252, a second electrode layer 262C, and a rib 282.

[0318] Like the first electrode layer 252, the second electrode layer 262C extends along a first direction of the plurality of pixels 202C-p arranged in a matrix, and is configured in a manner shared by the plurality of pixels 202C-p arranged in the first direction. The second electrode layer 262C is in contact with the second nitride semiconductor layer 242 via an opening 282-o, but does not completely cover the opening 282-o. Therefore, a portion of the upper surface of the second nitride semiconductor layer 242 is exposed in the opening 282-o. In addition, in a second direction orthogonal to the first direction, the width of the second electrode layer 262C is smaller than the maximum width of the opening 282-o. Furthermore, when viewed from above, the second electrode layer 262C does not overlap with the first electrode layer 252.

[0319] Each of the multiple pixels 202C-p includes a first electrode layer 252, a first nitride semiconductor layer 232, a second nitride semiconductor layer 242, and a second electrode layer 262C as an LED. Here, one of the electrodes of the LED is the first electrode layer 252, and the other is the second electrode layer 262C. The first electrode layer 252 and the second electrode layer 262C are shared by the multiple pixels 202C-p arranged in the first direction. Therefore, in the light-emitting device 202C, light emission can be controlled on a unit consisting of the multiple pixels 202C-p arranged in the first direction.

[0320] Furthermore, in the light-emitting device 202C, a portion of the second nitride semiconductor layer 242 is not covered by the second electrode layer 262C. Therefore, when light is emitted from the light-emitting device 202C towards its upward surface, the second electrode layer 262C can be made of either a transparent conductive material or a non-transparent metallic material. Additionally, since light can also be emitted from the opening 282-o, the luminous efficiency of the light-emitting device 202C is improved.

[0321] <Eighth Implementation>

[0322] Reference Figure 43 This invention describes a light-emitting device 203 according to one embodiment. It should be noted that when the configuration of the light-emitting device 203 is the same as that of the light-emitting devices 200 to 202, its description may be omitted.

[0323] Figure 43 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 203 according to one embodiment of the present invention. Specifically, Figure 43 This is a cross-sectional view of pixel 203-p.

[0324] like Figure 43 As shown, the light-emitting device 203 includes a substrate 213, an insulating alignment layer 223, a first nitride semiconductor layer 233, a second nitride semiconductor layer 243, a first electrode layer 253, and a second electrode layer 263.

[0325] An insulating alignment layer 223 is disposed on the substrate 213. Furthermore, the insulating alignment layer 223 is disposed in an island-like manner on each pixel 203-p arranged in a matrix. The plurality of insulating alignment layers 223 are separated from each other by grooves 283-g exposing the substrate 213.

[0326] A first nitride semiconductor layer 233 and a second nitride semiconductor layer 243 are sequentially disposed on an insulating alignment layer 223. Furthermore, the first nitride semiconductor layer 233 and the second nitride semiconductor layer 243 are respectively disposed in an island-like configuration on each of the pixels 203-p arranged in a matrix. The second nitride semiconductor layer 243 overlaps with the first nitride semiconductor layer 233 and, when viewed from above, has a smaller area than the first nitride semiconductor layer 233. That is, the stack of the first nitride semiconductor layer 233 and the second nitride semiconductor layer 243 includes a recess 243-r exposing the first nitride semiconductor layer 233. Additionally, the stacks of multiple first nitride semiconductor layers 233 and second nitride semiconductor layers 243 are separated from each other by trenches 283-g.

[0327] A first electrode layer 253 is disposed in the recess 243-r and electrically connected to the first nitride semiconductor layer 233. Furthermore, the first electrode layer 253 extends along a first direction and is disposed in a manner shared by a plurality of pixels 203-p arranged in the first direction. Therefore, in the first direction, the first electrode layer 253 is in contact not only with the upper surface of the first nitride semiconductor layer 233 but also with the side surface of the first nitride semiconductor layer 233.

[0328] The second electrode layer 263 is disposed on the second nitride semiconductor layer 243. Furthermore, the second electrode layer 263 is disposed in an island-like configuration on each pixel 203-p arranged in a matrix. It should be noted that the position of the second electrode layer 263 on the second nitride semiconductor layer 243 is not particularly limited. Additionally, the size of the second electrode layer 263 is not particularly limited.

[0329] Each of the multiple pixels 203-p includes a first electrode layer 253, a first nitride semiconductor layer 233, a second nitride semiconductor layer 243, and a second electrode layer 263 as an LED. Here, one of the electrodes of the LED is the first electrode layer 253, and the other is the second electrode layer 263. The first electrode layer 253 is shared by the multiple pixels 202-p arranged in the first direction. On the other hand, the second electrode layer 263 is provided on each of the pixels 203-p arranged in a matrix. In the light-emitting device 203, the multiple second electrode layers 263 are bonded to a substrate (different from the substrate 213) having a metal layer formed on it, and are electrically connected to the metal layer. Therefore, in the light-emitting device 203, light emission can be controlled on a unit consisting of the multiple pixels 203-p arranged in the first direction. It should be noted that, for ease of explanation, the pixel 203-p sometimes includes the substrate 213.

[0330] In the light-emitting device 203, since the first nitride semiconductor layer 233 is provided on the insulating alignment layer 223, the crystallinity of the first nitride semiconductor layer 233 is improved. Furthermore, by providing the second nitride semiconductor layer 243 on the first nitride semiconductor layer 233, whose crystallinity has been improved, the crystallinity of the second nitride semiconductor layer 243, which includes the light-emitting layer, is also improved. Therefore, the luminous efficiency of the light-emitting device 203 can be improved. Additionally, by providing the insulating alignment layer 223 on the substrate 213, multiple light-emitting devices 203 can be manufactured using a large-area amorphous substrate as the substrate 213.

[0331] Alternatively, the first electrode layer 253 and the second electrode layer 263 can be respectively disposed in each pixel 203-p configured in a matrix. That is, the first electrode layer 253 and the second electrode layer 263 can be disposed in an island-like manner within a pixel 203-p. In this case, the first electrode layers 253 of two adjacent pixels 203-p are not electrically connected to each other. Similarly, the second electrode layers 263 of two adjacent pixels 203-p are also not electrically connected to each other. In this case, the light-emitting device 203 can be used, for example, as an LED wafer on which an LED chip is formed. Since the substrate 213 is an amorphous substrate such as a glass substrate, it can be easily cut, and the cut pixel 203-p can be used as an LED chip.

[0332] <Modification 1 of the 8th Embodiment>

[0333] Figure 44 This is a schematic cross-sectional view illustrating the configuration of a light-emitting device 203A according to one embodiment of the present invention. Specifically, Figure 44 This is a cross-sectional view of pixel 203A-p. The light-emitting device 203A is a variation of the light-emitting device 203. Therefore, when the configuration of the light-emitting device 203A is the same as that of the light-emitting device 203, its description is sometimes omitted.

[0334] like Figure 44 As shown, the light-emitting device 203A includes a substrate 213, an insulating alignment layer 223A, a first nitride semiconductor layer 233A, a second nitride semiconductor layer 243, a first electrode layer 253, and a second electrode layer 263.

[0335] The insulating alignment layer 223A is also disposed in an island shape on each pixel 203A-p configured in a matrix, similar to the insulating alignment layer 223.

[0336] A first nitride semiconductor layer 233A and a second nitride semiconductor layer 243 are sequentially disposed on an insulating alignment layer 223A. Furthermore, the first nitride semiconductor layer 233A and the second nitride semiconductor layer 243 are respectively disposed in an island-like configuration on each of the pixels 203A-p arranged in a matrix. The second nitride semiconductor layer 243 overlaps with the first nitride semiconductor layer 233A and has a smaller area than the first nitride semiconductor layer 233A when viewed from above. That is, the stack of the first nitride semiconductor layer 233A and the second nitride semiconductor layer 243 includes a recess 243-r exposing the first nitride semiconductor layer 233A. Additionally, the stacks of multiple first nitride semiconductor layers 233A and second nitride semiconductor layers 243 are separated from each other by trenches 283-g. It should be noted that the side of the insulating alignment layer 223A is covered by the first nitride semiconductor layer 233A.

[0337] Each of the multiple pixels 203A-p includes a first electrode layer 253, a first nitride semiconductor layer 233A, a second nitride semiconductor layer 243, and a second electrode layer 263 as an LED. Here, one of the electrodes of the LED is the first electrode layer 253, and the other is the second electrode layer 263. The first electrode layer 253 is shared by the multiple pixels 202A-p arranged in the first direction. On the other hand, the second electrode layer 263 is provided on each of the pixels 203A-p arranged in a matrix. In the light-emitting device 203, the multiple second electrode layers 263 are bonded to a substrate, different from the substrate 213, on which a metal layer is formed, and are electrically connected to the metal layer. Therefore, in the light-emitting device 203A, light emission can be controlled on a unit consisting of the multiple pixels 203-p arranged in the first direction.

[0338] Alternatively, the first electrode layer 253 and the second electrode layer 263 can be respectively disposed in each pixel 203A-p configured in a matrix. That is, within a pixel 203A-p, the first electrode layer 253 and the second electrode layer 263 can also be respectively disposed in an island shape. In this case, the first electrode layers 253 of two adjacent pixels 203A-p are not electrically connected to each other. Similarly, the second electrode layers 263 of two adjacent pixels 203A-p are also not electrically connected to each other. In this case, the light-emitting device 203A can be used, for example, as an LED wafer on which an LED chip is formed. Since the substrate 213 is an amorphous substrate such as a glass substrate, it can be easily cut, and the cut pixels 203A-p can be used as LED chips.

[0339] <Ninth Embodiment>

[0340] Reference Figure 45 The light-emitting device forming substrate 10 of one embodiment of the present invention is described.

[0341] Figure 45 This is a schematic diagram illustrating the configuration of a light-emitting device forming substrate 10 according to one embodiment of the present invention. The light-emitting device forming substrate 10 includes a plurality of light-emitting devices 100. That is, in the light-emitting device forming substrate 10, a plurality of light-emitting devices 100 are manufactured using a single substrate 110. The substrate 110 is a so-called large-area substrate. In the light-emitting device forming substrate 10, since a plurality of light-emitting devices 100 can be manufactured at once using a large-area substrate, the manufacturing cost of the light-emitting devices 100 can be suppressed.

[0342] It should be noted that the above description uses the light-emitting device 100 described in the embodiment as an example, but it can also be applied to light-emitting devices (100A, 100B, 100C, 101, 101A, 101B, 101C, 101D, 101E, 102, 102A, 102B, 102C, 103, 103A, 200, 200A, 200B, 200C, 200D, 201, 201A, 201B, 201C, 202, 202A, 202B, 202C, 203, 203A) described in other embodiments (including variations).

[0343] As long as they do not contradict each other, the above-described embodiments, which are implementations of the present invention, can be appropriately combined and implemented. Furthermore, as long as the essence of the present invention is present, any technical solutions obtained by those skilled in the art through appropriate addition, deletion, or design changes to constituent elements based on the various embodiments, or through addition, omission, or condition changes to processes, are also included within the scope of the present invention.

[0344] Even if other effects are different from those of the embodiments described above, effects that are known from the description in this specification or that can be easily predicted by those skilled in the art should be considered as effects of the present invention.

[0345] Explanation of reference numerals in the attached figures

[0346] 100, 100A, 100B, 100C, 101, 101A, 101B, 101C, 101D, 101E, 102, 102A, 102B, 102C, 103, 103A: Light-emitting device; 100P: Pixel part; 100-p, 100A-p, 100B-p, 100C-p, 101-p, 101A-p, 101B-p, 101C-p, 101D-p, 101E-p, 102-p, 102A-p, 102B-p, 102C-p, 103-p, 103A-p: Pixel; 100T: Terminal part; 100-t: Terminal; 110, 111, 112, 113: Substrate; 120, 121, 121 E, 122, 123, 123A: Conductive alignment layer; 121-g, 121E-g: Trench; 130, 131, 132, 133, 133A: First nitride semiconductor layer; 130-a: First nitride semiconductor film; 140, 141, 142, 143: Second nitride semiconductor layer; 140-a: Second nitride semiconductor film; 150, 150A, 150B, 150C, 151, 151A, 151B, 151C, 151D, 152, 152A, 152B, 152C, 152D, 153: Electrode layer; 150A-g, 150B-g, 150C-g, 151A-g, 151B-g, 151C-g, 151D-g 152A-g, 152B-g, 152C-g: Groove; 160, 161: First Rib; 170, 171: Second Rib; 170-g: Groove; 172: Rib; 172-g: Groove; 173-g: Groove; 200, 200A, 200B, 200C, 200D, 201, 201A, 201B, 20 1C, 202, 202A, 202B, 202C, 203, 203A: Light-emitting devices; 200-p, 201-p, 201A-p, 201B-p, 202-p, 202A-p, 202B-p, 202C-p, 203-p: Pixels; 210, 211, 212, 213: Substrates; 220, 221... 222, 223, 223A: Insulating alignment layer; 230, 231, 232, 233, 233A: First nitride semiconductor layer; 230-a: First nitride semiconductor film; 240, 241, 242, 243: Second nitride semiconductor layer; 240-a, 240-b: Nitride semiconductor film; 240-r, 241-r, 242-r, 243-r: Recess; 250, 251, 252, 253: First electrode layer; 260, 260A, 260B, 260C, 261, 261A: 261B, 261C; 262, 262A, 262B, 262C, 263: Second electrode layer; 270, 271, 272: First rib; 280...281: Second rib; 280-o; 281-o; 282-o: Opening; 282: Rib; 283-g: Groove.

Claims

1. A light-emitting device comprising a plurality of pixels arranged in a matrix in a first direction and a second direction intersecting the first direction. The plurality of pixels arranged in a matrix each include: substrate; A conductive alignment layer on the substrate; A first nitride semiconductor layer above the conductive alignment layer; A second nitride semiconductor layer, comprising a light-emitting layer, above the first nitride semiconductor layer; and The electrode layer above the second nitride semiconductor layer, The first nitride semiconductor layer and the second nitride semiconductor layer are configured in an island shape. A first rib is provided between two adjacent first nitride semiconductor layers. A second rib is provided between two adjacent second nitride semiconductor layers. The substrate is configured in a manner shared by the multiple pixels arranged in a matrix.

2. The light-emitting device according to claim 1, wherein, The conductive alignment layer is provided in a manner shared by the multiple pixels arranged in a matrix.

3. The light-emitting device according to claim 1, wherein, The conductive alignment layer extends along the first direction and is configured in a manner shared by a plurality of pixels arranged in the first direction.

4. The light-emitting device according to any one of claims 1 to 3, wherein, The electrode layer is configured in a manner shared by the multiple pixels arranged in a matrix.

5. The light-emitting device according to any one of claims 1 to 3, wherein, The electrode layer extends along the first direction and is configured in a manner shared by multiple pixels arranged in the first direction.

6. The light-emitting device according to any one of claims 1 to 3, wherein, The electrode layer extends along the second direction and is configured in a manner shared by multiple pixels arranged in the second direction.

7. The light-emitting device according to any one of claims 1 to 3, wherein, The conductive alignment layer comprises at least one selected from titanium and titanium nitride.

8. The light-emitting device according to any one of claims 1 to 3, wherein, The substrate is amorphous.

9. A light-emitting device forming substrate comprising a plurality of light-emitting devices as described in any one of claims 1 to 8, The substrate is a substrate shared by the plurality of light-emitting devices.

10. A light-emitting device comprising a plurality of pixels arranged in a matrix in a first direction and a second direction intersecting the first direction. The plurality of pixels arranged in a matrix each include: substrate; An insulating alignment layer on the substrate; The first nitride semiconductor layer above the insulating alignment layer; A second nitride semiconductor layer, comprising a light-emitting layer, is placed above the first nitride semiconductor layer; The first electrode layer above the first nitride semiconductor layer; and The second electrode layer above the second nitride semiconductor layer The first nitride semiconductor layer and the second nitride semiconductor layer are configured in an island shape. A first rib is provided between two adjacent first nitride semiconductor layers. A second rib is provided between two adjacent second nitride semiconductor layers. The substrate is configured in a manner shared by the multiple pixels arranged in a matrix.

11. The light-emitting device according to claim 10, wherein, The insulating alignment layer is provided in a manner shared by the multiple pixels arranged in a matrix.

12. The light-emitting device according to claim 10, wherein, The insulating orientation layer is configured as an island.

13. The light-emitting device according to any one of claims 10 to 12, wherein, The second electrode layer is configured in a manner shared by the multiple pixels arranged in a matrix.

14. The light-emitting device according to any one of claims 10 to 12, wherein, The first electrode layer extends along the first direction and is configured to be shared by multiple pixels arranged in the first direction. The second electrode layer extends along the first direction and is configured in a manner shared by multiple pixels arranged in the first direction.

15. The light-emitting device according to any one of claims 10 to 12, wherein, The first electrode layer extends along the first direction and is configured to be shared by multiple pixels arranged in the first direction. The second electrode layer extends along the second direction and is configured in a manner shared by multiple pixels arranged in the second direction.

16. The light-emitting device according to any one of claims 10 to 12, wherein, The insulating orientation layer comprises at least one selected from aluminum nitride and aluminum oxide.

17. The light-emitting device according to any one of claims 10 to 12, wherein, The substrate is amorphous.

18. A light-emitting device forming substrate comprising a plurality of light-emitting devices as described in any one of claims 10 to 17, The substrate is a substrate shared by the plurality of light-emitting devices.

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