Memory Cards and Terminals

Abstract

The present invention provides a memory card and a terminal, wherein the memory card includes: a storage unit, a control unit and a memory card interface, the storage unit and the control unit are arranged in a card body of the memory card, the memory card interface is arranged on the card body of the memory card, and the control unit is electrically connected to the storage unit and the memory card interface respectively; since the appearance of the memory card is the same as that of the Nano‑SIM card, and the size of the memory card is the same as that of the Nano‑SIM card, a Nano‑SD card is provided, so that the memory card provided in this embodiment can be inserted into the Nano‑SIM card holder, and further, the memory card and the Nano‑SIM card can share the same Nano‑SIM card holder.

Description

Technical Field

[0001] The present application relates to communication technology, and in particular to a memory card and a terminal. Background Art

[0002] With the development of terminal technology, terminals have become an important communication tool in people's lives and work. Now, terminals are equipped with subscriber identification module (SIM) cards and secure digital memory (SD) cards, so that terminals can communicate through SIM cards and store data in SD cards.

[0003] In the prior art, a terminal is configured with dual Nano-SIM cards. Specifically, the terminal provides two Nano-SIM card holders, into which the two Nano-SIM cards can be respectively inserted, so that the terminal realizes dual Nano-SIM card communication.

[0004] However, when a user uses a terminal, the user will often only configure one Nano-SIM card on the terminal and use the Nano-SIM card, so that the Nano-SIM card will not be inserted into another card holder on the terminal, thereby wasting space in the terminal; and, since the SD card provided in the prior art is a Micro-SD card, the existing Micro-SD card is completely incompatible with the Nano-SIM card in terms of appearance and interface definition, and therefore a Micro-SD card holder compatible with the existing Micro-SD card is also provided on the terminal. As the design of terminals becomes increasingly miniaturized, optimization of the design space is a difficult problem in the industry. Summary of the invention

[0005] The present application provides a memory card and a terminal to solve the problem that one Nano-SIM card holder is not used in a terminal provided with two Nano-SIM card holders, thereby wasting terminal space, and that the existing Micro-SD card is completely incompatible with the Nano-SIM card.

[0006] In a first aspect, the present application provides a memory card, comprising: a storage unit, a control unit, and a memory card interface, wherein the storage unit and the control unit are arranged in a card body of the memory card; the memory card interface is arranged on the card body of the memory card; the control unit is electrically connected to the storage unit and the memory card interface, respectively, characterized in that the appearance of the memory card is the same as that of a Nano-user identity SIM card, and the size of the memory card is the same as that of the Nano-SIM card;

[0007] The memory card interface includes at least a first metal contact of the memory card, a second metal contact of the memory card, a third metal contact of the memory card, a fourth metal contact of the memory card, and a fifth metal contact of the memory card; wherein the first metal contact of the memory card is used to transmit a power signal, the second metal contact of the memory card is used to transmit data, the third metal contact of the memory card is used to transmit a control signal, the fourth metal contact of the memory card is used to transmit a clock signal, and the fifth metal contact of the memory card is used to transmit a ground signal.

[0008] In combination with the first aspect, in a first implementation of the first aspect, the first metal contact of the memory card, the second metal contact of the memory card, the third metal contact of the memory card, the fourth metal contact of the memory card, and the fifth metal contact of the memory card are all located on the same side of the card body of the memory card.

[0009] In combination with the first aspect or the first implementation manner of the first aspect, in a second implementation manner of the first aspect, a first metal contact of the Nano-SIM card, a second metal contact of the Nano-SIM card, a third metal contact of the Nano-SIM card, a fourth metal contact of the Nano-SIM card, a fifth metal contact of the Nano-SIM card, and a sixth metal contact of the Nano-SIM card are arranged on the card body of the Nano-SIM card;

[0010] The memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is used to transmit data, the seventh metal contact of the memory card is used to transmit data, and the eighth metal contact of the memory card is used to transmit data;

[0011] The area of ​​the fourth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the first metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0012] The area of ​​the second metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the second metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0013] The seventh metal contact of the memory card and the first metal contact of the memory card are adjacent to and isolated from each other, the area of ​​the seventh metal contact of the memory card and the first metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the third metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the seventh metal contact of the memory card is adjacent to the second metal contact of the memory card;

[0014] The area of ​​the sixth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fourth metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0015] The area of ​​the third metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fifth metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0016] The eighth metal contact of the memory card and the fifth metal contact of the memory card are adjacent to and isolated from each other, the area of ​​the eighth metal contact of the memory card and the fifth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the sixth metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the eighth metal contact of the memory card is adjacent to the third metal contact of the memory card.

[0017] In combination with the first aspect or the first implementation manner of the first aspect, in a third implementation manner of the first aspect, a first metal contact of the Nano-SIM card, a second metal contact of the Nano-SIM card, a third metal contact of the Nano-SIM card, a fourth metal contact of the Nano-SIM card, a fifth metal contact of the Nano-SIM card, and a sixth metal contact of the Nano-SIM card are arranged on the card body of the Nano-SIM card;

[0018] The memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is used to transmit data, the seventh metal contact of the memory card is used to transmit data, and the eighth metal contact of the memory card is used to transmit data;

[0019] The seventh metal contact of the memory card and the fourth metal contact of the memory card are adjacent to and isolated from each other, and the area of ​​the seventh metal contact of the memory card and the fourth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the first metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0020] The area of ​​the second metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the second metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the fourth metal contact of the memory card is adjacent to the second metal contact of the memory card;

[0021] The area of ​​the first metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the third metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0022] The eighth metal contact of the memory card and the sixth metal contact of the memory card are adjacent to and isolated from each other, and the area of ​​the eighth metal contact of the memory card and the sixth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fourth metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0023] The area of ​​the third metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fifth metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the sixth metal contact of the memory card is adjacent to the third metal contact of the memory card;

[0024] The area of ​​the fifth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the sixth metal contact of the Nano-SIM card on the card body of the Nano-SIM card.

[0025] In combination with the first aspect or the first implementation manner of the first aspect, in a fourth implementation manner of the first aspect, a first metal contact of the Nano-SIM card, a second metal contact of the Nano-SIM card, a third metal contact of the Nano-SIM card, a fourth metal contact of the Nano-SIM card, a fifth metal contact of the Nano-SIM card, and a sixth metal contact of the Nano-SIM card are arranged on the card body of the Nano-SIM card;

[0026] The memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is used to transmit data, the seventh metal contact of the memory card is used to transmit data, and the eighth metal contact of the memory card is used to transmit data;

[0027] The area of ​​the fourth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the first metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0028] The second metal contact of the memory card and the seventh metal contact of the memory card are adjacent to and isolated from each other, the area of ​​the second metal contact of the memory card and the seventh metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the second metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the second metal contact of the memory card is adjacent to the fourth metal contact of the memory card;

[0029] The area of ​​the first metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the third metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the seventh metal contact of the memory card is adjacent to the first metal contact of the memory card;

[0030] The area of ​​the sixth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fourth metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0031] The third metal contact of the memory card and the eighth metal contact of the memory card are adjacent to and isolated from each other, the area of ​​the third metal contact of the memory card and the eighth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fifth metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the third metal contact of the memory card is adjacent to the sixth metal contact of the memory card;

[0032] The area of ​​the fifth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the sixth metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the eighth metal contact of the memory card is adjacent to the fifth metal contact of the memory card.

[0033] In combination with the first aspect or the first implementation manner of the first aspect, in a fifth implementation manner of the first aspect, a first metal contact of the Nano-SIM card, a second metal contact of the Nano-SIM card, a third metal contact of the Nano-SIM card, a fourth metal contact of the Nano-SIM card, a fifth metal contact of the Nano-SIM card, and a sixth metal contact of the Nano-SIM card are arranged on the card body of the Nano-SIM card;

[0034] The memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is used to transmit data, the seventh metal contact of the memory card is used to transmit data, and the eighth metal contact of the memory card is used to transmit data;

[0035] The area of ​​the fourth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the first metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0036] The area of ​​the second metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the second metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0037] The seventh metal contact of the memory card and the first metal contact of the memory card are adjacent to and isolated from each other, the area of ​​the seventh metal contact of the memory card and the first metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the third metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the first metal contact of the memory card is adjacent to the second metal contact of the memory card; the area of ​​the first metal contact of the memory card is larger than the area of ​​the seventh metal contact of the memory card;

[0038] The area of ​​the sixth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fourth metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0039] The area of ​​the third metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fifth metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0040] The eighth metal contact of the memory card and the fifth metal contact of the memory card are adjacent to and isolated from each other; the area of ​​the eighth metal contact of the memory card and the fifth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the sixth metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the fifth metal contact of the memory card is adjacent to the third metal contact of the memory card; the area of ​​the fifth metal contact of the memory card is larger than the area of ​​the eighth metal contact of the memory card.

[0041] In combination with the first aspect or the first implementation manner of the first aspect, in a sixth implementation manner of the first aspect, a first metal contact of the Nano-SIM card, a second metal contact of the Nano-SIM card, a third metal contact of the Nano-SIM card, a fourth metal contact of the Nano-SIM card, a fifth metal contact of the Nano-SIM card, and a sixth metal contact of the Nano-SIM card are arranged on the card body of the Nano-SIM card;

[0042] The memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is used to transmit data, the seventh metal contact of the memory card is used to transmit data, and the eighth metal contact of the memory card is used to transmit data;

[0043] The area of ​​the fourth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the first metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0044] The area of ​​the second metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the second metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0045] The area of ​​the first metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the third metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0046] The area of ​​the sixth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fourth metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0047] The area of ​​the third metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fifth metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0048] The area of ​​the fifth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the sixth metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0049] The seventh metal contact of the memory card is located between the fourth metal contact of the memory card and the sixth metal contact of the memory card, and the seventh metal contact of the memory card is isolated from the fourth metal contact of the memory card and the sixth metal contact of the memory card respectively, and the center point of the seventh metal contact of the memory card is located on the connecting line between the center point of the fourth metal contact of the memory card and the center point of the sixth metal contact of the memory card;

[0050] The eighth metal contact of the memory card is located between the first metal contact of the memory card and the fifth metal contact of the memory card, and the eighth metal contact of the memory card is isolated from the first metal contact of the memory card and the fifth metal contact of the memory card, respectively, and the center point of the eighth metal contact of the memory card is located on the connecting line between the center point of the first metal contact of the memory card and the center point of the fifth metal contact of the memory card.

[0051] In combination with the first aspect or the first implementation manner of the first aspect, in a seventh implementation manner of the first aspect, a first metal contact of the Nano-SIM card, a second metal contact of the Nano-SIM card, a third metal contact of the Nano-SIM card, a fourth metal contact of the Nano-SIM card, a fifth metal contact of the Nano-SIM card, and a sixth metal contact of the Nano-SIM card are arranged on the card body of the Nano-SIM card;

[0052] The memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is used to transmit data, the seventh metal contact of the memory card is used to transmit data, and the eighth metal contact of the memory card is used to transmit data;

[0053] The area of ​​the sixth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the first metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0054] The area of ​​the third metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the second metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0055] The seventh metal contact of the memory card and the first metal contact of the memory card are adjacent to and isolated from each other, the area of ​​the seventh metal contact of the memory card and the first metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the third metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the seventh metal contact of the memory card is adjacent to the third metal contact of the memory card;

[0056] The area of ​​the fourth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fourth metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0057] The area of ​​the second metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fifth metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0058] The eighth metal contact of the memory card and the fifth metal contact of the memory card are adjacent to and isolated from each other, the area of ​​the eighth metal contact of the memory card and the fifth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the sixth metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the eighth metal contact of the memory card is adjacent to the second metal contact of the memory card.

[0059] In combination with the first aspect or the first implementation manner of the first aspect, in an eighth implementation manner of the first aspect, a first metal contact of the Nano-SIM card, a second metal contact of the Nano-SIM card, a third metal contact of the Nano-SIM card, a fourth metal contact of the Nano-SIM card, a fifth metal contact of the Nano-SIM card, and a sixth metal contact of the Nano-SIM card are provided on the card body of the Nano-SIM card;

[0060] The memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is used to transmit data, the seventh metal contact of the memory card is used to transmit data, and the eighth metal contact of the memory card is used to transmit data;

[0061] The seventh metal contact of the memory card and the fourth metal contact of the memory card are adjacent to and isolated from each other, and the area of ​​the seventh metal contact of the memory card and the fourth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the first metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0062] The area of ​​the third metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the second metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the clock signal of the memory card is adjacent to the third metal contact of the memory card;

[0063] The area of ​​the fifth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the third metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0064] The eighth metal contact of the memory card and the sixth metal contact of the memory card are adjacent to and isolated from each other, and the area of ​​the eighth metal contact of the memory card and the sixth metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fourth metal contact of the Nano-SIM card on the card body of the Nano-SIM card;

[0065] The area of ​​the second metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the fifth metal contact of the Nano-SIM card on the card body of the Nano-SIM card, and the sixth metal contact of the memory card is adjacent to the second metal contact of the memory card;

[0066] The area of ​​the first metal contact of the memory card on the card body of the memory card corresponds to the area of ​​the sixth metal contact of the Nano-SIM card on the card body of the Nano-SIM card.

[0067] In a second aspect, the present application provides a terminal, on which is disposed a memory card as described in any one of the above items.

[0068] In the above aspects, a memory card consisting of a storage unit, a control unit, and a memory card interface is provided, the storage unit and the control unit are arranged in the card body of the memory card, the memory card interface is arranged on the card body of the memory card, and the control unit is electrically connected to the storage unit and the memory card interface respectively; since the appearance of the memory card is the same as that of the Nano-user identity SIM card, and the size of the memory card is the same as that of the Nano-SIM card, a Nano-SD card is provided, so that the memory card provided in this embodiment can be inserted into the Nano-SIM card holder, and further, the memory card and the Nano-SIM card can share the same Nano-SIM card holder. BRIEF DESCRIPTION OF THE DRAWINGS

[0069] Figure 1 A schematic diagram of the structure of a memory card provided in an embodiment of the present application;

[0070] Figure 2 It is a schematic diagram of the structure of a Nano-SIM card in the prior art;

[0071] Figure 3 A schematic diagram of another memory card provided in an embodiment of the present application Figure 1 ;

[0072] Figure 3a A schematic diagram of another memory card provided in an embodiment of the present application Figure 2 ;

[0073] Figure 3b A schematic diagram of another memory card provided in an embodiment of the present application Figure 3 ;

[0074] Figure 3c A schematic diagram of another memory card provided in an embodiment of the present application Figure 4 ;

[0075] Figure 4 A schematic diagram of another memory card provided in an embodiment of the present application Figure 1 ;

[0076] Figure 4a A schematic diagram of another memory card provided in an embodiment of the present application Figure 2 ;

[0077] Figure 5 A schematic diagram of the structure of another memory card provided in an embodiment of the present application;

[0078] Figure 6 A structural schematic diagram of another memory card provided in an embodiment of the present application;

[0079] Figure 7 A schematic diagram of the structure of another memory card provided in an embodiment of the present application;

[0080] Figure 8 A structural schematic diagram of a memory card is also provided for the embodiment of the present application;

[0081] Fig. 9 A schematic diagram of the structure of another memory card provided in an embodiment of the present application;

[0082] Fig.10 A schematic diagram of the structure of another memory card provided in an embodiment of the present application;

[0083] Fig.11 A schematic diagram of the structure of another memory card provided in an embodiment of the present application;

[0084] Fig.12 Another structural diagram of a memory card provided in the embodiment of the present application is as follows;

[0085] Fig.13 A schematic diagram of the structure of another memory card provided in the embodiment of the present application;

[0086] Fig.14 A schematic diagram of the structure of another memory card provided in the embodiment of the present application;

[0087] Fig.15 A schematic diagram of the structure of another memory card provided in the embodiment of the present application;

[0088] Fig.16 Another structural diagram of a memory card provided in the embodiment of the present application is as follows;

[0089] Fig.17 A schematic diagram of the structure of another memory card provided in an embodiment of the present application;

[0090] Fig.18 A schematic diagram of the structure of another memory card provided in an embodiment of the present application;

[0091] Fig.19 A schematic diagram of the structure of another memory card provided in an embodiment of the present application;

[0092] Fig. 20 A schematic diagram of the structure of another memory card provided in an embodiment of the present application;

[0093] Fig.21 A schematic diagram of the structure of another memory card provided in the embodiment of the present application;

[0094] Fig. 22 A schematic diagram of the structure of another memory card provided in the embodiment of the present application;

[0095] Fig.23 A schematic diagram of the structure of another memory card provided in the embodiment of the present application;

[0096] Fig.24 A structural diagram of a memory card is also provided for the embodiment of the present application;

[0097] Fig.25 Another structural diagram of a memory card provided in the embodiment of the present application is as follows;

[0098] Fig.26 A circuit diagram of a terminal provided in an embodiment of the present application. DETAILED DESCRIPTION

[0099] The embodiments of the present application are applied to a communication device. Some of the terms in the present application are explained below to facilitate understanding by those skilled in the art. It should be noted that when the scheme of the embodiments of the present application is applied to a current communication device or a communication device that may appear in the future, the names of the memory card and the terminal may change, but this does not affect the implementation of the scheme of the embodiments of the present application.

[0100] First, the technical terms involved in this application are explained:

[0101] 1) Universal Serial Bus (USB): It is a serial bus standard for connecting computer systems with external devices. It is also a technical specification for input and output interfaces. It is widely used in information communication products such as personal computers and mobile devices.

[0102] 2) Institute of Electrical and Electronics Engineers (IEEE) 1394 standard: a serial standard.

[0103] 3) Terminal: It can include various handheld devices with communication functions, vehicle-mounted devices, wearable devices, home smart devices, computing devices or other processing devices connected to wireless modems, as well as various forms of terminals, such as mobile stations (MS), terminals, user equipment (UE), soft terminals, etc. For example, water meters, electricity meters, sensors, etc.

[0104] It should be pointed out that the nouns or terms involved in the embodiments of the present application can refer to each other and will not be repeated here.

[0105] It should be noted that in the embodiment of the present application, when a memory card with the same outer dimensions as the Nano-SIM card is used to implement the storage function, the type of the memory card is not limited to the SD card in the above example. In the embodiment of the present application, the memory card can also be a memory card based on interface protocols such as universal serial bus (USB), peripheral component interconnect express (PCIE), universal flash storage (UFS), multimedia memory card (MMC) or embedded multimedia memory card (EMMC).

[0106] The following will describe the technical solution in an example in conjunction with the accompanying drawings in an example. In the prior art, a Micro-SD card or a Nano-SIM card can be configured in a current terminal. The size of a Micro-SD card is 11 mm*15 mm, and the size of a Nano-SIM card is 8.8 mm*12.3 mm. The size of a Micro-SD card is 56 mm larger than that of a Nano-SIM card. 2 , and the Micro-SD card holder is 130mm larger than the Nano SIM card holder 2It can be seen that the Micro-SD card cannot be inserted into the Nano-SIM card holder. However, when the terminal provides two Nano-SIM card holders, users often only configure one Nano-SIM card on the terminal and use one Nano-SIM card, so that the other Nano-SIM card holder on the terminal will not be inserted into the Nano-SIM card holder, thereby wasting the terminal space; and, since the Micro-SD card cannot be inserted into the Nano-SIM card holder, the terminal equipped with dual Nano-SIM card holders cannot store data.

[0107] The pins in each embodiment of the present application are metal contacts, that is, the pins can be contacts with a contact area and a conductive function; the pins in each embodiment of the present application can be called connection terminals; the specific names of the pins are not specifically limited.

[0108] In each embodiment of the present application, A "corresponds" to B, which can also be called A and B mapping, indicating that A and B correspond to / map to the same spring piece of the Nano-SIM card holder. For example, the area of ​​the clock signal pin of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin of the Nano-SIM card on the card body of the Nano-SIM card, wherein "corresponding" here can also be called the mapping of the clock signal pin of the memory card to the clock signal pin of the Nano-SIM card, that is, the clock signal pin of the memory card and the clock signal pin of the Nano-SIM card correspond to / map to the same spring piece of the Nano-SIM card holder.

[0109] In each embodiment of the present application, the “power pin” of the memory card refers to the “first metal contact of the memory card”, the “data transmission pin” of the memory card refers to the “second metal contact of the memory card”, the “control signal pin” of the memory card refers to the “third metal contact of the memory card”, the “clock signal pin” of the memory card refers to the “fourth metal contact of the memory card”, and the “ground signal pin” of the memory card refers to the “fifth metal contact of the memory card”; the “first data transmission pin” of the memory card refers to the “second metal contact”, the “second data transmission pin” of the memory card refers to the “sixth metal contact”, the “third data transmission pin” of the memory card refers to the “seventh metal contact”, and the “fourth data transmission pin” of the memory card refers to the “eighth metal contact”.

[0110] In each embodiment of the present application, the “clock signal pin” of the Nano-SIM card refers to the “first metal contact of the Nano-SIM card”, the “reset signal pin” of the Nano-SIM card refers to the “second metal contact of the Nano-SIM card”, the “power pin” of the Nano-SIM card refers to the “third metal contact of the Nano-SIM card”, the “data transmission pin” of the Nano-SIM card refers to the “fourth metal contact of the Nano-SIM card”, the “programming voltage / input signal pin” of the Nano-SIM card refers to the “fifth metal contact of the Nano-SIM card”, and the “ground signal pin” of the Nano-SIM card refers to the “sixth metal contact of the Nano-SIM card”.

[0111] Figure 1 A schematic diagram of the structure of a memory card provided in an embodiment of the present application is shown in FIG. Figure 1 As shown, the memory card includes: a storage unit, a control unit, and a memory card interface, the storage unit and the control unit are arranged in the card body of the memory card; the memory card interface is arranged on the card body of the memory card; the control unit is electrically connected to the storage unit and the memory card interface respectively, the appearance of the memory card is the same as that of the Nano-SIM card, and the size of the memory card is the same as that of the Nano-SIM card.

[0112] The memory card interface at least includes a power pin, a data transmission pin, a control signal pin, a clock signal pin, and a ground signal pin.

[0113] In an optional implementation manner, the power pin, the data transmission pin, the control signal pin, the clock signal pin, and the ground signal pin are all located on the same side of the card body of the memory card.

[0114] In this embodiment, specifically, the memory card is composed of a storage unit, a control unit, and a memory card interface, and the memory card also includes an interface driving circuit. The storage unit, the control unit, and the interface driving circuit are arranged in the card body of the memory card, and the memory card interface is arranged on the surface of the card body of the memory card.

[0115] In addition, the control unit is electrically connected to the storage unit and the memory card interface respectively. Specifically, the interface driving circuit is electrically connected to the memory card interface and the control unit respectively, and then the interface driving circuit electrically connects the memory card interface to the control unit and electrically connects the control unit to the storage unit.

[0116] The memory card interface includes at least one power pin, four data transmission pins, one control signal pin, one clock signal pin, and one ground signal pin; the power pin, the data transmission pin, the control signal pin, the clock signal pin, and the ground signal pin are all arranged on the same side of the memory card body, such as Figure 1 As shown, each of the above pins is Figure 1 Mark 11 in the memory card. Optionally, the power pin of the memory card, the data transmission pin of the memory card, the control signal pin of the memory card, the clock signal pin of the memory card, and the ground signal pin of the memory card are flat contacts attached to the surface of the card body of the memory card.

[0117] In an optional embodiment, at least one trace is provided on the card body of the memory card, and at least one trace is located between the pins in the memory card interface; at least one trace is used to connect the storage unit with the control unit, and at least one trace is also used to connect the control unit with the memory card interface.

[0118] The positions of the pins of the memory card interface on the memory card body are not limited. The length and height values ​​of the pins of the memory card interface are not limited. The shape of the pins (or contacts, or connection terminals) mentioned in this embodiment can be a regular rectangle or an irregular shape. This embodiment does not limit the shape of the pins (or contacts, or connection terminals). The distance between the edges of the pins of the memory card interface and the side edges of the memory card is not limited; the specific height and length values ​​of the memory card are not limited.

[0119] For example, according to Figure 1 The viewing angle is from left to right for the length of the memory card, and from bottom to top for the width of the memory card. The length of the memory card is 12.30 mm, with a tolerance of 0.10 mm; the width of the memory card is 8.80 mm, with a tolerance of 0.10 mm.

[0120] The appearance of the memory card provided in the embodiment of the present application is the same as that of the Nano-SIM card; for example, the Nano-SIM card is a rectangle, and the four corners of the rectangle are rounded, and one of the four corners of the rectangle is provided with a positioning notch, and then the memory card provided in the embodiment of the present application is also a rectangle, and the four corners of the rectangle are rounded, and one of the four corners of the rectangle is chamfered, and then a positioning notch 12 is provided on the corner. In addition, the size of the memory card provided in the embodiment of the present application is the same as that of the Nano-SIM card, specifically, the length of the memory card is the same as that of the Nano-SIM card, the width of the memory card is the same as that of the Nano-SIM card, and the size of the positioning notch on the memory card is also the same as that of the positioning notch on the Nano-SIM card. Therefore, the memory card provided in the present embodiment can be inserted into the Nano-SIM card holder, and further, the memory card and the Nano-SIM card can share the same Nano-SIM card holder.

[0121] The memory card provided in the embodiment of the present application can be clipped, and can basically adapt to the clipping and non-clipping situations. Figure 1The viewing angle is from top to bottom for the X direction of the memory card, and from left to right for the Y direction of the memory card. Table 1 shows the matching of the Nano-SIM card with the Nano-SIM card holder of the terminal, and the matching of the memory card of this embodiment with the Nano-SIM card holder of the terminal.

[0122] Table 1 is the tolerance analysis of the memory card of the present application and the Nano-SIM card holder of the terminal

[0123]

[0124] It can be seen from Table 1 that the tolerance generated when the memory card of this embodiment cooperates with the Nano-SIM card socket of the terminal is the same as the tolerance generated when the Nano-SIM card cooperates with the Nano-SIM card socket of the terminal, so the memory card of this embodiment can cooperate with the Nano-SIM card socket well.

[0125] This embodiment provides a memory card consisting of a storage unit, a control unit, and a memory card interface. The storage unit and the control unit are arranged in the card body of the memory card, the memory card interface is arranged on the card body of the memory card, and the control unit is electrically connected to the storage unit and the memory card interface respectively. Since the appearance of the memory card is the same as that of the Nano-user identity SIM card, and the size of the memory card is the same as that of the Nano-SIM card, a Nano-SD card is provided. Figure 1 As shown, a positioning notch 12 is provided on the Nano-SD card, so that the memory card provided in this embodiment can be inserted into the Nano-SIM card holder. Furthermore, the memory card and the Nano-SIM card can share the same Nano-SIM card holder.

[0126] Figure 2 FIG. 1 is a schematic diagram of the structure of a Nano-SIM card in the prior art. Figure 2 As shown, the Nano-SIM card body is provided with a clock signal pin 31, a reset signal pin 32, a power pin 33, a data transmission pin 34, a programming voltage / input signal pin 35, and a ground signal pin 36. In the following embodiments, when the pins are split, the shape and size of the pins obtained after the split are not limited, and the shape and size of other pins are not limited; for example, the edges of the pins of the memory card may have chamfers or may not have chamfers. In the following embodiments, when the pins are split, the shape and size of the memory card are not limited, for example, a positioning notch may be provided on one corner of the memory card.

[0127] Figure 3 A schematic diagram of another memory card provided in an embodiment of the present application Figure 1 ,exist Figure 1The illustrated embodiment provides a memory card based on, Figure 3 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0128] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0129] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card.

[0130] The third data transmission pin 27 of the memory card and the power pin 22 of the memory card are adjacent to and isolated from each other. The area of ​​the third data transmission pin 27 and the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card, and the third data transmission pin 27 is adjacent to the first data transmission pin 25 of the memory card.

[0131] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0132] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card.

[0133] The fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card are adjacent to and isolated from each other. The area of ​​the fourth data transmission pin 28 and the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card, and the fourth data transmission pin 28 is adjacent to the control signal pin 23 of the memory card.

[0134] In this embodiment, specifically, Figure 2As shown, a clock signal (clock, CLK) pin 31, a reset signal (reset signal, RST) pin 32, a power supply (power supply, VCC) pin 33, a data line (data line, DAT) pin 34, a programming voltage / input signal (programming voltage / input signal, VPP) pin 35, and a ground signal (power supply ground, GND) pin 36 are arranged on the card body of the existing Nano-SIM card. For example, the center points of the CLK pin 31, the RST pin 32, and the VCC pin 33 are located on the same straight line, and the center points of the DAT pin 34, the VPP pin 35, and the GND pin 36 are located on the same straight line, and these two straight lines are parallel.

[0135] like Figure 3 As shown, the memory card interface of the memory card provided in the embodiment of the present application includes at least a clock signal pin 21, a power pin 22, a control signal (command / response, CMD) pin 23, a ground signal pin 24, a first data transmission pin 25, a second data transmission pin 26, a third data transmission pin 27 and a fourth data transmission pin 28.

[0136] like Figure 3As shown, in this embodiment, the area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card, wherein the "corresponding" here can also be referred to as the mapping of the clock signal pin 21 of the memory card and the clock signal pin 31 of the Nano-SIM card, that is, the clock signal pin 21 of the memory card and the clock signal pin 31 of the Nano-SIM card correspond to / map the same spring of the Nano-SIM card holder; the first data transmission pin 25 of the memory card is located in the memory card body. The area on the card body of the storage card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card, wherein the "corresponding" here can also be referred to as the mapping of the first data transmission pin 25 of the storage card and the reset signal pin 32 of the Nano-SIM card, that is, the first data transmission pin 25 of the storage card and the reset signal pin 32 of the Nano-SIM card correspond / map to the same spring piece of the Nano-SIM card socket; furthermore, the clock signal pin 21 of the storage card is adjacent to and isolated from the first data transmission pin 25 of the storage card. In addition, the third data transmission pin 27 of the memory card and the power pin 22 of the memory card are adjacent to and isolated from each other. The areas of the third data transmission pin 27 and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card. The third data transmission pin 27 is adjacent to and isolated from the first data transmission pin 25 of the memory card. The "corresponding" here can also mean that both the third data transmission pin 27 and the power pin 22 of the memory card are mapped to the power pin 33 of the Nano-SIM card, that is, the third data transmission pin 27 and the power pin 22 of the memory card correspond to / map the same spring clip of the Nano-SIM card holder with the power pin 33 of the Nano-SIM card. Furthermore, the areas of the clock signal pin 21 of the memory card, the first data transmission pin 25 of the memory card, the third data transmission pin 27 of the memory card and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card, thereby ensuring that the memory card provided in this embodiment can share the same Nano-SIM card holder with the Nano-SIM card. It can be seen that the area of ​​the power pin 33 on the Nano-SIM card is split into two pins, thereby obtaining the third data transmission pin 27 of the memory card and the power pin 22 of the memory card, wherein the shape and size of the third data transmission pin 27 of the memory card and the power pin 22 of the memory card are not limited. In addition, the shape and size of the clock signal pin 21 of the memory card and the first data transmission pin 25 of the memory card are not limited.

[0137] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card; the area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card; further, the second data transmission pin 26 of the memory card is adjacent to and isolated from the control signal pin 23 of the memory card. In addition, the fourth data transmission pin 28 of the memory card is adjacent to and isolated from the ground signal pin 24 of the memory card, and the area of ​​the fourth data transmission pin 28 and the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card, and the fourth data transmission pin 28 is adjacent to and isolated from the control signal pin 23 of the memory card. Furthermore, the areas of the second data transmission pin 26 of the memory card, the control signal pin 23 of the memory card, the fourth data transmission pin 28 of the memory card, and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, the programming voltage / input signal pin 35, and the ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card, thereby ensuring that the memory card provided in this embodiment can share the same Nano-SIM card holder with the Nano-SIM card. It can be seen that the area of ​​the ground signal pin 36 on the Nano-SIM card is split into two pins, thereby obtaining the fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card, wherein the shape and size of the fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card are not limited. In addition, the shape and size of the second data transmission pin 26 of the memory card and the control signal pin 23 of the memory card are not limited.

[0138] and, Figure 3a A schematic diagram of another memory card provided in an embodiment of the present application Figure 2 ,like Figure 3a As shown, the shape of each pin (or contact, or connection terminal) of the memory card is not limited, and each pin (or contact, or connection terminal) can be an irregular shape; Figure 3a It can be seen that there may be no spacing between the pins (or contacts, or connection terminals) of the memory card, and thus the wiring of the memory card may be inside the card body of the memory card. The wiring is used to connect the storage unit with the control unit, and the wiring is also used to connect the control unit with the memory card interface. Figure 3b A schematic diagram of another memory card provided in an embodiment of the present application Figure 3 ,like Figure 3bAs shown, there may be spacing between the pins (or contacts, or connection terminals) of the memory card, and there may also be spacing between the pins (or contacts, or connection terminals) and the edge of the memory card. It can be seen that the pins on the memory card do not cover the entire surface of the memory card body, and these spacings are areas on the surface of the memory card body, and then these areas can be used to set routing, that is, the routing is laid on the spacing between the pins (or contacts, or connection terminals), and on the spacing between the pins (or contacts, or connection terminals) and the edge of the memory card, and the routing is used to connect the storage unit with the control unit, and the routing is also used to connect the control unit with the memory card interface.

[0139] and, Figure 3c A schematic diagram of another memory card provided in an embodiment of the present application Figure 4 ,like Figure 3c As shown, in Figure 3a In the case of memory card ground signal pin 24 Figure 3a For the shapes shown, see Figure 3c The area filled with diagonal lines, Figure 3c The area filled with diagonal lines serves as the ground signal pin 24 of the memory card.

[0140] The shapes and spacings of the pins (or contacts or connection terminals) in the following embodiments may refer to the descriptions of the shapes and spacings of the pins (or contacts or connection terminals) in this embodiment.

[0141] In the drawings of the following embodiments, the clock signal pin 21 of the memory card is marked as CLK, the power pin 22 of the memory card is marked as VCC, the control signal pin 23 of the memory card is marked as CMD, the ground signal pin 24 of the memory card is marked as GND, the first data transmission pin 25 of the memory card is marked as D0, the second data transmission pin 26 of the memory card is marked as D1, the third data transmission pin 27 of the memory card is marked as D2, and the fourth data transmission pin 28 of the memory card is marked as D3.

[0142] Figure 4 A schematic diagram of another memory card provided in an embodiment of the present application Figure 1 ,exist Figure 1 The illustrated embodiment provides a memory card based on, Figure 4 As shown, the memory card includes four data transmission pins, which are a first data transmission pin 25, a second data transmission pin 26, a third data transmission pin 27 and a fourth data transmission pin 28.

[0143] The third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card are adjacent to and isolated from each other. The area of ​​the third data transmission pin 27 and the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0144] The area of ​​the first data transmission pin 25 of the memory card on the card body corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body, and the clock signal pin 21 of the memory card is adjacent to the first data transmission pin 25 .

[0145] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0146] The fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are adjacent to and isolated from each other. The area of ​​the fourth data transmission pin 28 and the second data transmission pin 26 on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0147] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card, and the second data transmission pin 26 is adjacent to the control signal pin 23 of the memory card.

[0148] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0149] In this embodiment, specifically, according to the above pin layout, the areas of the third data transmission pin 27 of the memory card, the clock signal pin 21 of the memory card, the first data transmission pin 25 of the memory card and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the clock signal pin 31 on the Nano-SIM card is split into two pins, thereby obtaining the third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card, wherein the shape and size of the third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card are not limited. In addition, the shape and size of the first data transmission pin 25 of the memory card and the power pin 22 of the memory card are not limited.

[0150] The areas of the above four pins, namely, the fourth data transmission pin 28 of the memory card, the second data transmission pin 26 of the memory card, the control signal pin 23 of the memory card, and the ground signal pin 24 of the memory card, on the card body of the memory card correspond to the areas of the data transmission pin 34, the programming voltage / input signal pin 35, and the ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card, thereby ensuring that the memory card provided in this embodiment can share the same Nano-SIM card holder with the Nano-SIM card. For example, the areas of the above four pins on the card body of the memory card are the same as the areas of the data transmission pin 34, the programming voltage / input signal pin 35, and the ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the data transmission pin 34 of the Nano-SIM card is split into two pins, thereby obtaining the fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card, wherein the appearance and size of the fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are not limited. Furthermore, the shapes and sizes of the control signal pin 23 of the memory card and the ground signal pin 24 of the memory card are not limited.

[0151] and, Figure 4a A schematic diagram of another memory card provided in an embodiment of the present application Figure 2 ,like Figure 4a As shown, the shape of each pin (or contact, or connection terminal) of the memory card is not limited, and each pin (or contact, or connection terminal) may be an irregular shape. In addition, there may be a spacing between each pin (or contact, or connection terminal) of the memory card in this embodiment, and then the wiring of the memory card may be set on the surface of these spacings; there may also be no spacing, and then the wiring of the memory card may be inside the card body of the memory card.

[0152] In this embodiment, "corresponding" may also be referred to as a mapping relationship. For example, the area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card, which means that the first data transmission pin 25 of the memory card is mapped to the reset signal pin 32 of the Nano-SIM card, that is, the first data transmission pin 25 of the memory card and the reset signal pin 32 of the Nano-SIM card correspond to / map to the same spring piece of the Nano-SIM card socket.

[0153] Figure 5 A schematic diagram of the structure of another memory card provided in an embodiment of the present application, Figure 1 The illustrated embodiment provides a memory card based on, Figure 5As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0154] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0155] The first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card are adjacent to and isolated from each other. The area of ​​the first data transmission pin 25 and the third data transmission pin 27 on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card, and the first data transmission pin 25 is adjacent to the clock signal pin 21 of the memory card.

[0156] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card, and the third data transmission pin 27 is adjacent to the power pin 22 of the memory card.

[0157] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0158] The control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are adjacent to and isolated from each other. The area of ​​the control signal pin 23 and the fourth data transmission pin 28 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card, and the control signal pin 23 of the memory card is adjacent to the second data transmission pin 26 of the memory card.

[0159] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card, and the fourth data transmission pin 28 is adjacent to the ground signal pin 24 of the memory card.

[0160] In this embodiment, specifically, according to the above pin layout, the areas of the clock signal pin 21 of the memory card, the first data transmission pin 25 of the memory card, the third data transmission pin 27 of the memory card and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the reset signal pin 32 of the Nano-SIM card is split into two pins, thereby obtaining the first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card, wherein the shape and size of the first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card are not limited. In addition, the shape and size of the clock signal pin 21 of the memory card and the power pin 22 of the memory card are not limited.

[0161] The areas of the second data transmission pin 26 of the memory card, the control signal pin 23 of the memory card, the fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, the programming voltage / input signal pin 35 and the ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card is split into two pins, and then the control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are obtained, wherein the shape and size of the control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are not limited. In addition, the shape and size of the second data transmission pin 26 of the memory card and the ground signal pin 24 of the memory card are not limited.

[0162] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, so that the wiring of the memory card can be arranged on the surface of these spacings; or there may be no spacings, so that the wiring of the memory card can be inside the card body of the memory card.

[0163] In this embodiment, "corresponding" may also be referred to as a mapping relationship. For example, the area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card, which means that the clock signal pin 21 of the memory card is mapped to the clock signal pin 31 of the Nano-SIM card, that is, the clock signal pin 21 of the memory card and the clock signal pin 31 of the Nano-SIM card correspond to / map to the same spring piece of the Nano-SIM card holder.

[0164] Figure 6A schematic diagram of a memory card structure provided in an embodiment of the present application is shown in FIG. Figure 1 The illustrated embodiment provides a memory card based on, Figure 6 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0165] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0166] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card.

[0167] The third data transmission pin 27 of the memory card and the power pin 22 of the memory card are adjacent to and isolated from each other. The areas of the third data transmission pin 27 and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card, and the power pin 22 of the memory card is adjacent to the first data transmission pin 25 of the memory card; the area of ​​the power pin 22 of the memory card is larger than the area of ​​the third data transmission pin 27 of the memory card.

[0168] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0169] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card.

[0170] The fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card are adjacent to and isolated from each other. The areas of the fourth data transmission pin 28 and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card, and the ground signal pin 24 of the memory card is adjacent to the control signal pin 23 of the memory card; the area of ​​the ground signal pin 24 of the memory card is larger than the area of ​​the fourth data transmission pin 28 of the memory card.

[0171] In this embodiment, specifically, according to the above pin layout, the areas of the clock signal pin 21 of the memory card, the first data transmission pin 25 of the memory card, the power pin 22 of the memory card, and the third data transmission pin 27 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32, and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the power pin 33 of the Nano-SIM card is split into two pins, thereby obtaining the power pin 22 of the memory card and the third data transmission pin 27 of the memory card. In this embodiment, the power pin 22 of the memory card is adjacent to the first data transmission pin 25 of the memory card. Among them, the shape and size of the power pin 22 of the memory card and the third data transmission pin 27 of the memory card are not limited. In addition, the shape and size of the clock signal pin 21 of the memory card and the first data transmission pin 25 of the memory card are not limited.

[0172] The areas of the second data transmission pin 26 of the memory card, the control signal pin 23 of the memory card, the ground signal pin 24 of the memory card, and the fourth data transmission pin 28 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, the programming voltage / input signal pin 35, and the ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the ground signal pin 36 on the Nano-SIM card is split into two pins, thereby obtaining the ground signal pin 24 of the memory card and the fourth data transmission pin 28 of the memory card. In this embodiment, the ground signal pin 24 of the memory card is adjacent to the control signal pin 23 of the memory card. Among them, the shape and size of the ground signal pin 24 of the memory card and the fourth data transmission pin 28 of the memory card are not limited. In addition, the shape and size of the second data transmission pin 26 of the memory card and the control signal pin 23 of the memory card are not limited.

[0173] Furthermore, the area of ​​the power pin 22 of the memory card is larger than the area of ​​the third data transmission pin 27 of the memory card, and the area of ​​the ground signal pin 24 of the memory card is larger than the area of ​​the fourth data transmission pin 28 of the memory card. Therefore, the signals of the newly added third data transmission pin 27 and fourth data transmission pin 28 of the memory card are placed as far as possible outside the card; and the position of the center point of the power pin 22 of the memory card on the card body of the memory card corresponds as far as possible to the position of the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card; the position of the center point of the ground signal pin 24 of the memory card on the card body of the memory card corresponds as far as possible to the position of the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card; thereby, the tolerance margin of the Nano-SD card can be increased.

[0174] For example, according to Figure 6 From the viewing angle, from right to left, the third data transmission pin 27 of the memory card has a first edge and a second edge, and the memory card has a first side edge and a second side edge; the length of the first edge of the third data transmission pin 27 of the memory card from the first side edge of the memory card is 1 mm, and the tolerance is 0.1 mm; the length of the second edge of the third data transmission pin 27 of the memory card from the first side edge of the memory card is 4.9 mm, and the tolerance is 0.1 mm; the length of the first edge of the third data transmission pin 27 of the memory card from the second side edge of the memory card is 11.3 mm, and the tolerance is 0.1 mm; the length of the second edge of the third data transmission pin 27 of the memory card from the second side edge of the memory card is 7.55 mm, and the tolerance is 0.1 mm.

[0175] according to Figure 6 From the viewing angle, from right to left, the fourth data transmission pin 28 of the memory card has a first side and a second side; the length of the first side of the fourth data transmission pin 28 of the memory card is 7.55 mm from the first side of the memory card, with a tolerance of 0.1 mm; the length of the second side of the fourth data transmission pin 28 of the memory card is 11.3 mm from the first side of the memory card, with a tolerance of 0.1 mm; the length of the first side of the fourth data transmission pin 28 of the memory card is 4.9 mm from the second side of the memory card, with a tolerance of 0.1 mm; the length of the second side of the fourth data transmission pin 28 of the memory card is 1 mm from the second side of the memory card, with a tolerance of 0.1 mm. Figure 6 The lengths of the first sides and the second sides of the other pins in the memory card from the first side edge and the second side edge of the memory card respectively can refer to the above data.

[0176] according to Figure 6From the viewing angle of FIG. 1 , from top to bottom, the memory card has a third side and a fourth side, the fourth data transmission pin 28 of the memory card has a third side and a fourth side, the ground signal pin 24 of the memory card has a third side and a fourth side, the control signal pin 23 of the memory card has a third side and a fourth side, and the second data transmission pin 26 of the memory card has a third side and a fourth side. The maximum length of the third side of the fourth data transmission pin 28 of the memory card from the third side of the memory card is 0.2 mm, and the maximum length of the fourth side of the fourth data transmission pin 28 of the memory card from the third side of the memory card is 1.05 mm. The maximum length of the third side of the ground signal pin 24 of the memory card from the third side of the memory card is 1.4 mm; the fourth side of the ground signal pin 24 of the memory card from the third side of the memory card is 2.6 mm, and the tolerance is 0.1 mm. The maximum length of the third side of the control signal pin 23 of the memory card from the third side of the memory card is 3.35 mm, with a tolerance of 0.1 mm; the fourth side of the control signal pin 23 of the memory card is 5.25 mm, with a tolerance of 0.1 mm. The maximum length of the third side of the second data transmission pin 26 of the memory card from the third side of the memory card is 6.05 mm, with a tolerance of 0.1 mm; the fourth side of the second data transmission pin 26 of the memory card is 7.95 mm, with a tolerance of 0.1 mm. The distance between the third side of the memory card and the fourth side of the memory card is 8.8 mm, with a tolerance of 0.1 mm.

[0177] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, so that the wiring of the memory card can be arranged on the surface of these spacings; or there may be no spacings, so that the wiring of the memory card can be inside the card body of the memory card.

[0178] In this embodiment, "corresponding" may also be referred to as a mapping relationship. For example, the area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card, which means that the first data transmission pin 25 of the memory card is mapped to the reset signal pin 32 of the Nano-SIM card, that is, the first data transmission pin 25 of the memory card and the reset signal pin 32 of the Nano-SIM card correspond to / map to the same spring piece of the Nano-SIM card socket.

[0179] Figure 7 A schematic diagram of the structure of another memory card provided in an embodiment of the present application, Figure 1 The illustrated embodiment provides a memory card based on, Figure 7As shown, the memory card includes four data transmission pins, which are a first data transmission pin 25, a second data transmission pin 26, a third data transmission pin 27 and a fourth data transmission pin 28.

[0180] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0181] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card.

[0182] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0183] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0184] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card.

[0185] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0186] The third data transmission pin 27 of the memory card is located between the clock signal pin 21 and the second data transmission pin 26 of the memory card, and the third data transmission pin 27 is isolated from the clock signal pin 21 and the second data transmission pin 26 of the memory card respectively, and the center point of the third data transmission pin 27 is located on the connecting line between the center point of the clock signal pin 21 of the memory card and the center point of the second data transmission pin 26.

[0187] The fourth data transmission pin 28 of the memory card is located between the power pin 22 of the memory card and the ground signal pin 24 of the memory card, and the fourth data transmission pin 28 is isolated from the power pin 22 of the memory card and the ground signal pin 24 of the memory card, respectively. The center point of the fourth data transmission pin 28 is located on the connecting line between the center point of the power pin 22 of the memory card and the center point of the ground signal pin 24 of the memory card.

[0188] In this embodiment, specifically, according to the above pin layout, the areas of the clock signal pin 21 of the memory card, the first data transmission pin 25 of the memory card and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card.

[0189] The areas of the second data transmission pin 26 of the memory card, the control signal pin 23 of the memory card and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, the programming voltage / input signal pin 35 and the ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card.

[0190] The third data transmission pin 27 of the memory card is arranged between the clock signal pin 21 of the memory card and the second data transmission pin 26 of the memory card. Preferably, the center point of the third data transmission pin 27 of the memory card is located on the connection line between the center point of the clock signal pin 21 of the memory card and the center point of the second data transmission pin 26 of the memory card. The fourth data transmission pin 28 of the memory card is arranged between the power supply pin 22 of the memory card and the ground signal pin 24 of the memory card. Preferably, the center point of the fourth data transmission pin 28 of the memory card is located on the connection line between the center point of the power supply pin 22 of the memory card and the center point of the ground signal pin 24 of the memory card.

[0191] For example, according to Figure 7From the viewing angle of FIG. 1 , from left to right, the clock signal pin 21 of the memory card has a first side and a second side, the memory card has a first side and a second side, the third data transmission pin 27 of the memory card has a first side and a second side, and the second data transmission pin 26 of the memory card has a first side and a second side. The length of the first side of the clock signal pin 21 of the memory card from the first side of the memory card is at most 1.00 mm, and the length of the second side of the clock signal pin 21 of the memory card from the first side of the memory card is at least 3.00 mm. The length of the first side of the third data transmission pin 27 of the memory card from the first side of the memory card is at most 4.81 mm, and the length of the second side of the third data transmission pin 27 of the memory card from the first side of the memory card is at least 6.81 mm. The length of the first side of the second data transmission pin 26 of the memory card from the first side of the memory card is at most 8.62 mm, and the length of the second side of the second data transmission pin 26 of the memory card from the first side of the memory card is at least 10.02 mm. The distance between the first side of the memory card and the second side of the memory card is 12.30 mm, with a tolerance of 0.1 mm. The distance between the second side of the second data transmission pin 26 of the memory card and the second side of the memory card is 1.65 mm, with a tolerance of 0.1 mm. The angle of the positioning notch of the memory card is 45 degrees. Figure 7 The lengths of the first sides and the second sides of the other pins in the memory card from the first side edge and the second side edge of the memory card respectively can refer to the above data.

[0192] according to Figure 7From the viewing angle of FIG. 1 , from top to bottom, the memory card has a third side and a fourth side, the second data transmission pin 26 of the memory card has a third side and a fourth side, the control signal pin 23 of the memory card has a third side and a fourth side, the ground signal pin 24 of the memory card has a third side and a fourth side, the fourth data transmission pin 28 of the memory card has a third side and a fourth side, and the third data transmission pin 27 of the memory card has a third side and a fourth side. The maximum length of the third side of the fourth data transmission pin 28 of the memory card from the third side of the memory card is 0.81 mm, and the minimum length of the fourth side of the fourth data transmission pin 28 of the memory card from the third side of the memory card is 2.51 mm. The maximum length of the third side of the third data transmission pin 27 of the memory card from the third side of the memory card is 6.29 mm, and the minimum length of the fourth side of the third data transmission pin 27 of the memory card from the third side of the memory card is 7.99 mm. The maximum length of the third side of the ground signal pin 24 of the memory card from the third side of the memory card is 1.01 mm, and the minimum length of the fourth side of the ground signal pin 24 of the memory card from the third side of the memory card is 2.71 mm. The maximum length of the third side of the control signal pin 23 of the memory card from the third side of the memory card is 3.55 mm, and the minimum length of the fourth side of the control signal pin 23 of the memory card from the third side of the memory card is 5.25 mm. The maximum length of the third side of the second data transmission pin 26 of the memory card from the third side of the memory card is 6.09 mm, and the minimum length of the fourth side of the second data transmission pin 26 of the memory card from the third side of the memory card is 7.79 mm. The distance between the third side of the memory card and the fourth side of the memory card is 8.80 mm, and the tolerance is 0.1 mm.

[0193] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, so that the wiring of the memory card can be arranged on the surface of these spacings; or there may be no spacings, so that the wiring of the memory card can be inside the card body of the memory card.

[0194] In this embodiment, "corresponding" may also be referred to as a mapping relationship. For example, the area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card, which means that the power pin 22 of the memory card is mapped to the power pin 33 of the Nano-SIM card, that is, the power pin 22 of the memory card and the power pin 33 of the Nano-SIM card correspond to / map to the same spring piece of the Nano-SIM card socket.

[0195] Figure 8 A schematic diagram of a memory card structure is also provided in the embodiment of the present application. Figure 1 The illustrated embodiment provides a memory card based on, Figure 8As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0196] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0197] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card.

[0198] The third data transmission pin 27 of the memory card and the power pin 22 of the memory card are adjacent to and isolated from each other. The area of ​​the third data transmission pin 27 and the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card, and the third data transmission pin 27 is adjacent to the control signal pin 23 of the memory card.

[0199] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0200] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card.

[0201] The fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card are adjacent to and isolated from each other. The area of ​​the fourth data transmission pin 28 and the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card, and the fourth data transmission pin 28 is adjacent to the first data transmission pin 25 of the memory card.

[0202] In this embodiment, specifically, the areas of the second data transmission pin 26 of the memory card, the control signal pin 23 of the memory card, the third data transmission pin 27 of the memory card, and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32, and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the power pin 33 on the Nano-SIM card is split into two pins, thereby obtaining the third data transmission pin 27 of the memory card and the power pin 22 of the memory card, wherein the shape and size of the third data transmission pin 27 of the memory card and the power pin 22 of the memory card are not limited. In addition, the shape and size of the second data transmission pin 26 of the memory card and the control signal pin 23 of the memory card are not limited.

[0203] Furthermore, the areas of the clock signal pin 21 of the memory card, the first data transmission pin 25 of the memory card, the fourth data transmission pin 28 of the memory card, and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, the programming voltage / input signal pin 35, and the ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the ground signal pin 36 on the Nano-SIM card is split into two pins, and then the fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card are obtained, wherein the shape and size of the fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card are not limited. In addition, the shape and size of the clock signal pin 21 of the memory card and the first data transmission pin 25 of the memory card are not limited.

[0204] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, so that the wiring of the memory card can be arranged on the surface of these spacings; or there may be no spacings, so that the wiring of the memory card can be inside the card body of the memory card.

[0205] In this embodiment, "corresponding" may also be referred to as a mapping relationship. For example, the area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card, which means that the second data transmission pin 26 of the memory card is mapped to the clock signal pin 31 of the Nano-SIM card, that is, the second data transmission pin 26 of the memory card and the clock signal pin 31 of the Nano-SIM card correspond to / map to the same spring piece of the Nano-SIM card holder.

[0206] Fig. 9 Another structural diagram of a memory card provided in the embodiment of the present application is as follows: Figure 1 The illustrated embodiment provides a memory card based on, Fig. 9 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0207] The third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card are adjacent to and isolated from each other. The area of ​​the third data transmission pin 27 and the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0208] The area of ​​the control signal pin 23 of the memory card on the card body corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body, and the clock signal of the memory card is adjacent to the control signal pin 23 of the memory card.

[0209] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0210] The fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are adjacent to and isolated from each other. The area of ​​the fourth data transmission pin 28 and the second data transmission pin 26 on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0211] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card, and the second data transmission pin 26 is adjacent to the first data transmission pin 25.

[0212] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0213] In this embodiment, specifically, according to the above pin layout, the areas of the third data transmission pin 27 of the memory card, the clock signal pin 21 of the memory card, the control signal pin 23 of the memory card, and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32, and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the clock signal pin 31 on the Nano-SIM card is split into two pins, thereby obtaining the third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card, wherein the shape and size of the third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card are not limited. In addition, the shape and size of the control signal pin 23 of the memory card and the ground signal pin 24 of the memory card are not limited.

[0214] The areas of the fourth data transmission pin 28 of the memory card, the second data transmission pin 26 of the memory card, the first data transmission pin 25 of the memory card and the power supply pin 22 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, programming voltage / input signal pin 35 and ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the data transmission pin 34 of the Nano-SIM card is split into two pins, and then the fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are obtained, wherein the shape and size of the fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are not limited. In addition, the shape and size of the first data transmission pin 25 of the memory card and the power supply pin 22 of the memory card are not limited.

[0215] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, so that the wiring of the memory card can be arranged on the surface of these spacings; or there may be no spacings, so that the wiring of the memory card can be inside the card body of the memory card.

[0216] In this embodiment, "corresponding" can also be referred to as a mapping relationship. For example, the area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card, which means that the ground signal pin 24 of the memory card is mapped to the power pin 33 of the Nano-SIM card, that is, the ground signal pin 24 of the memory card and the power pin 33 of the Nano-SIM card correspond to / map to the same spring piece of the Nano-SIM card socket.

[0217] Fig.10 A schematic diagram of the structure of a memory card is provided in the embodiment of the present application. Figure 1 The illustrated embodiment provides a memory card based on, Fig.10 As shown, the memory card includes four data transmission pins, which are a first data transmission pin 25, a second data transmission pin 26, a third data transmission pin 27 and a fourth data transmission pin 28.

[0218] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0219] The first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card are adjacent to and isolated from each other. The area of ​​the first data transmission pin 25 and the third data transmission pin 27 on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card, and the first data transmission pin 25 is adjacent to the second data transmission pin 26 of the memory card.

[0220] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0221] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0222] The control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are adjacent to and isolated from each other. The area of ​​the control signal pin 23 and the fourth data transmission pin 28 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card, and the control signal pin 23 of the memory card is adjacent to the clock signal pin 21 of the memory card.

[0223] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0224] In this embodiment, specifically, according to the above pin layout, the areas of the second data transmission pin 26 of the memory card, the first data transmission pin 25 of the memory card, the third data transmission pin 27 of the memory card and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the reset signal pin 32 of the Nano-SIM card is split into two pins, thereby obtaining the first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card, wherein the shape and size of the first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card are not limited. In addition, the shape and size of the second data transmission pin 26 of the memory card and the ground signal pin 24 of the memory card are not limited.

[0225] The areas of the clock signal pin 21 of the memory card, the control signal pin 23 of the memory card, the fourth data transmission pin 28 of the memory card and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, programming voltage / input signal pin 35 and ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card is split into two pins, and then the control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are obtained, wherein the shape and size of the control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are not limited. In addition, the shape and size of the clock signal pin 21 of the memory card and the power pin 22 of the memory card are not limited.

[0226] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0227] Fig.11 A schematic diagram of the structure of another memory card provided in the embodiment of the present application is shown in FIG. Figure 1 The illustrated embodiment provides a memory card based on, Fig.11 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0228] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0229] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card.

[0230] The third data transmission pin 27 of the memory card and the power pin 22 of the memory card are adjacent to and isolated from each other. The areas of the third data transmission pin 27 and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card, and the power pin 22 of the memory card is adjacent to the control signal pin 23 of the memory card. The area of ​​the power pin 22 of the memory card is larger than the area of ​​the third data transmission pin 27 of the memory card.

[0231] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0232] The area on the card body of the memory card where the first data of the memory card is transmitted corresponds to the area on the card body of the Nano-SIM card where the programming voltage / input signal pin 35 of the Nano-SIM card is located.

[0233] The fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card are adjacent to and isolated from each other. The areas of the fourth data transmission pin 28 and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card, and the ground signal pin 24 of the memory card is adjacent to the first data transmission of the memory card; the area of ​​the ground signal pin 24 of the memory card is larger than the area of ​​the fourth data transmission pin 28 of the memory card.

[0234] In this embodiment, specifically, according to the above pin layout, the areas of the second data transmission pin 26 of the memory card, the control signal pin 23 of the memory card, the power pin 22 of the memory card, and the third data transmission pin 27 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32, and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the power pin 33 of the Nano-SIM card is split into two pins, thereby obtaining the power pin 22 of the memory card and the third data transmission pin 27 of the memory card. In this embodiment, the power pin 22 of the memory card is adjacent to the control signal pin 23 of the memory card. Among them, the shape and size of the power pin 22 of the memory card and the third data transmission pin 27 of the memory card are not limited. In addition, the shape and size of the second data transmission pin 26 of the memory card and the control signal pin 23 of the memory card are not limited.

[0235] The areas of the clock signal pin 21 of the memory card, the first data transmission pin 25 of the memory card, the ground signal pin 24 of the memory card, and the fourth data transmission pin 28 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, the programming voltage / input signal pin 35, and the ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the ground signal pin 36 on the Nano-SIM card is split into two pins, thereby obtaining the ground signal pin 24 of the memory card and the fourth data transmission pin 28 of the memory card. In this embodiment, the ground signal pin 24 of the memory card is adjacent to the first data transmission pin 25 of the memory card. Among them, the shape and size of the ground signal pin 24 of the memory card and the fourth data transmission pin 28 of the memory card are not limited. In addition, the shape and size of the clock signal pin 21 of the memory card and the first data transmission pin 25 of the memory card are not limited.

[0236] Furthermore, the area of ​​the power pin 22 of the memory card is larger than the area of ​​the third data transmission pin 27 of the memory card, and the area of ​​the ground signal pin 24 of the memory card is larger than the area of ​​the fourth data transmission pin 28 of the memory card. Therefore, the signals of the newly added third data transmission pin 27 and fourth data transmission pin 28 of the memory card are placed as far as possible outside the card; and the position of the center point of the power pin 22 of the memory card on the card body of the memory card corresponds as far as possible to the position of the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card; the position of the center point of the ground signal pin 24 of the memory card on the card body of the memory card corresponds as far as possible to the position of the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card; thereby, the tolerance margin of the Nano-SD card can be increased.

[0237] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0238] Fig.12 Another structural diagram of a memory card provided in the embodiment of the present application is as follows: Figure 1 The illustrated embodiment provides a memory card based on, Fig.12 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0239] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0240] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card.

[0241] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0242] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0243] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card;

[0244] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0245] The fourth data transmission pin 28 of the memory card is located between the clock signal pin 21 and the second data transmission pin 26 of the memory card, and the fourth data transmission pin 28 is isolated from the clock signal pin 21 and the second data transmission pin 26 of the memory card respectively, and the center point of the fourth data transmission pin 28 is located on the connecting line between the center point of the clock signal pin 21 of the memory card and the center point of the second data transmission pin 26.

[0246] The third data transmission pin 27 of the memory card is located between the power pin 22 of the memory card and the ground signal pin 24 of the memory card, and the third data transmission pin 27 is isolated from the power pin 22 of the memory card and the ground signal pin 24 of the memory card, respectively. The center point of the third data transmission pin 27 is located on the connecting line between the center point of the power pin 22 of the memory card and the center point of the ground signal pin 24 of the memory card.

[0247] In this embodiment, specifically, according to the above pin layout, the areas of the clock signal pin 21 of the memory card, the first data transmission pin 25 of the memory card and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card.

[0248] The areas of the second data transmission pin 26 of the memory card, the control signal pin 23 of the memory card and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, the programming voltage / input signal pin 35 and the ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card.

[0249] The fourth data transmission pin 28 of the memory card is arranged between the clock signal pin 21 of the memory card and the second data transmission pin 26 of the memory card. Preferably, the center point of the fourth data transmission pin 28 of the memory card is located on the connection line between the center point of the clock signal pin 21 of the memory card and the center point of the second data transmission pin 26 of the memory card. The third data transmission pin 27 of the memory card is arranged between the power supply pin 22 of the memory card and the ground signal pin 24 of the memory card. Preferably, the center point of the third data transmission pin 27 of the memory card is located on the connection line between the center point of the power supply pin 22 of the memory card and the center point of the ground signal pin 24 of the memory card.

[0250] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0251] Fig.13 Another structural diagram of a memory card provided in the embodiment of the present application is as follows: Figure 1 The illustrated embodiment provides a memory card based on, Fig.13 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0252] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0253] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card.

[0254] The third data transmission pin 27 of the memory card and the power pin 22 of the memory card are adjacent to and isolated from each other. The area of ​​the third data transmission pin 27 and the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card, and the third data transmission pin 27 is adjacent to the clock signal pin 21 of the memory card.

[0255] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0256] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card.

[0257] The fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card are adjacent to and isolated from each other. The area of ​​the fourth data transmission pin 28 and the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card, and the fourth data transmission pin 28 is adjacent to the second data transmission pin 26 of the memory card.

[0258] In this embodiment, specifically, according to the above pin layout, the areas of the first data transmission pin 25 of the memory card, the clock signal pin 21 of the memory card, the third data transmission pin 27 of the memory card and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the power pin 33 on the Nano-SIM card is split into two pins, thereby obtaining the third data transmission pin 27 of the memory card and the power pin 22 of the memory card, wherein the shape and size of the third data transmission pin 27 of the memory card and the power pin 22 of the memory card are not limited. In addition, the shape and size of the first data transmission pin 25 of the memory card and the clock signal pin 21 of the memory card are not limited.

[0259] The areas of the control signal pin 23 of the memory card, the second data transmission pin 26 of the memory card, the fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, programming voltage / input signal pin 35 and ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the ground signal pin 36 on the Nano-SIM card is split into two pins, thereby obtaining the fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card, wherein the shape and size of the fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card are not limited. In addition, the shape and size of the control signal pin 23 of the memory card and the second data transmission pin 26 of the memory card are not limited.

[0260] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0261] Fig.14 Another structural diagram of a memory card provided in the embodiment of the present application is as follows: Figure 1 The illustrated embodiment provides a memory card based on, Fig.14 As shown, the memory card includes four data transmission pins, which are a first data transmission pin 25, a second data transmission pin 26, a third data transmission pin 27 and a fourth data transmission pin 28.

[0262] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0263] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card.

[0264] The third data transmission pin 27 of the memory card and the power pin 22 of the memory card are adjacent to and isolated from each other. The areas of the third data transmission pin 27 and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card, and the power pin 22 of the memory card is adjacent to the clock signal pin 21 of the memory card; the area of ​​the power pin 22 of the memory card is larger than the area of ​​the third data transmission pin 27 of the memory card.

[0265] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0266] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card.

[0267] The fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card are adjacent to and isolated from each other. The areas of the fourth data transmission pin 28 and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card, and the ground signal pin 24 of the memory card is adjacent to the second data transmission pin 26 of the memory card; the area of ​​the ground signal pin 24 of the memory card is larger than the area of ​​the fourth data transmission pin 28 of the memory card.

[0268] In this embodiment, specifically, according to the above pin layout, the areas of the first data transmission pin 25 of the memory card, the clock signal pin 21 of the memory card, the power pin 22 of the memory card, and the third data transmission pin 27 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32, and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the power pin 33 of the Nano-SIM card is split into two pins, thereby obtaining the power pin 22 of the memory card and the third data transmission pin 27 of the memory card. In this embodiment, the power pin 22 of the memory card is adjacent to the clock signal pin 21 of the memory card. Among them, the shape and size of the power pin 22 of the memory card and the third data transmission pin 27 of the memory card are not limited. In addition, the shape and size of the first data transmission pin 25 of the memory card and the clock signal pin 21 of the memory card are not limited.

[0269] The areas of the control signal pin 23 of the memory card, the second data transmission pin 26 of the memory card, the ground signal pin 24 of the memory card, and the fourth data transmission pin 28 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, the programming voltage / input signal pin 35, and the ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the ground signal pin 36 on the Nano-SIM card is split into two pins, thereby obtaining the ground signal pin 24 of the memory card and the fourth data transmission pin 28 of the memory card. In this embodiment, the ground signal pin 24 of the memory card is adjacent to the second data transmission pin 26 of the memory card. Among them, the shape and size of the ground signal pin 24 of the memory card and the fourth data transmission pin 28 of the memory card are not limited. In addition, the shape and size of the control signal pin 23 of the memory card and the second data transmission pin 26 of the memory card are not limited.

[0270] Furthermore, the area of ​​the power pin 22 of the memory card is larger than the area of ​​the third data transmission pin 27 of the memory card, and the area of ​​the ground signal pin 24 of the memory card is larger than the area of ​​the fourth data transmission pin 28 of the memory card. Therefore, the signals of the newly added third data transmission pin 27 and fourth data transmission pin 28 of the memory card are placed as far as possible outside the card; and the position of the center point of the power pin 22 of the memory card on the card body of the memory card corresponds as far as possible to the position of the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card; the position of the center point of the ground signal pin 24 of the memory card on the card body of the memory card corresponds as far as possible to the position of the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card; thereby, the tolerance margin of the Nano-SD card can be increased.

[0271] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0272] Fig.15 Another structural diagram of a memory card provided in the embodiment of the present application is as follows: Figure 1 The illustrated embodiment provides a memory card based on, Fig.15 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0273] The third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card are adjacent to and isolated from each other. The area of ​​the third data transmission pin 27 and the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0274] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card, and the third data transmission pin 27 of the memory card is adjacent to the first data transmission pin 25.

[0275] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0276] The fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are adjacent to and isolated from each other. The area of ​​the fourth data transmission pin 28 and the second data transmission pin 26 on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0277] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card, and the fourth data transmission pin 28 of the memory card is adjacent to the control signal pin 23 of the memory card.

[0278] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0279] In this embodiment, specifically, according to the above pin layout, the areas of the clock signal pin 21 of the memory card, the third data transmission pin 27 of the memory card, the first data transmission pin 25 of the memory card and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the clock signal pin 31 on the Nano-SIM card is split into two pins, thereby obtaining the third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card, wherein the shape and size of the third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card are not limited. In addition, the shape and size of the first data transmission pin 25 of the memory card and the power pin 22 of the memory card are not limited.

[0280] The areas of the second data transmission pin 26 of the memory card, the fourth data transmission pin 28 of the memory card, the control signal pin 23 of the memory card, and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, programming voltage / input signal pin 35, and ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the data transmission pin 34 of the Nano-SIM card is split into two pins, and then the fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are obtained, wherein the shape and size of the fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are not limited. In addition, the shape and size of the control signal pin 23 of the memory card and the ground signal pin 24 of the memory card are not limited.

[0281] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0282] Fig.16 Another structural diagram of a memory card provided in the embodiment of the present application is as follows: Figure 1 The illustrated embodiment provides a memory card based on, Fig.16 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0283] The third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card are adjacent to and isolated from each other. The area of ​​the third data transmission pin 27 and the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0284] The area of ​​the control signal pin 23 of the memory card on the card body corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body, and the third data transmission pin 27 of the memory card is adjacent to the control signal pin 23 of the memory card.

[0285] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0286] The fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are adjacent to and isolated from each other. The area of ​​the fourth data transmission pin 28 and the second data transmission pin 26 on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0287] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card, and the fourth data transmission pin 28 of the memory card is adjacent to the first data transmission pin 25.

[0288] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0289] In this embodiment, specifically, according to the above pin layout, the areas of the clock signal pin 21 of the memory card, the third data transmission pin 27 of the memory card, the control signal pin 23 of the memory card, and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32, and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the clock signal pin 31 on the Nano-SIM card is split into two pins, thereby obtaining the third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card, wherein the shape and size of the third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card are not limited. In addition, the shape and size of the control signal pin 23 of the memory card and the ground signal pin 24 of the memory card are not limited.

[0290] The areas of the second data transmission pin 26 of the memory card, the fourth data transmission pin 28 of the memory card, the first data transmission pin 25 of the memory card and the power supply pin 22 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, programming voltage / input signal pin 35 and ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the data transmission pin 34 of the Nano-SIM card is split into two pins, and then the fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are obtained, wherein the shape and size of the fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are not limited. In addition, the shape and size of the first data transmission pin 25 of the memory card and the power supply pin 22 of the memory card are not limited.

[0291] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0292] Fig.17 A schematic diagram of the structure of another memory card provided in an embodiment of the present application, Figure 1 The illustrated embodiment provides a memory card based on, Fig.17 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0293] The third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card are adjacent to and isolated from each other. The area of ​​the third data transmission pin 27 and the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0294] The area of ​​the control signal pin 23 of the memory card on the card body corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body, and the third data transmission pin 27 of the memory card is adjacent to the control signal pin 23 of the memory card.

[0295] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0296] The fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are adjacent to and isolated from each other. The area of ​​the fourth data transmission pin 28 and the second data transmission pin 26 on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0297] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card, and the second data transmission pin 26 of the memory card is adjacent to the first data transmission pin 25.

[0298] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0299] In this embodiment, specifically, according to the above pin layout, the areas of the clock signal pin 21 of the memory card, the third data transmission pin 27 of the memory card, the control signal pin 23 of the memory card, and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32, and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the clock signal pin 31 on the Nano-SIM card is split into two pins, thereby obtaining the third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card, wherein the shape and size of the third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card are not limited. In addition, the shape and size of the control signal pin 23 of the memory card and the ground signal pin 24 of the memory card are not limited.

[0300] The areas of the fourth data transmission pin 28 of the memory card, the second data transmission pin 26 of the memory card, the first data transmission pin 25 of the memory card and the power supply pin 22 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, programming voltage / input signal pin 35 and ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the data transmission pin 34 of the Nano-SIM card is split into two pins, and then the fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are obtained, wherein the shape and size of the fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are not limited. In addition, the shape and size of the first data transmission pin 25 of the memory card and the power supply pin 22 of the memory card are not limited.

[0301] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0302] Fig.18 A schematic diagram of the structure of another memory card provided in an embodiment of the present application, Figure 1 The illustrated embodiment provides a memory card based on, Fig.18 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0303] The third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card are adjacent to and isolated from each other. The area of ​​the third data transmission pin 27 and the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0304] The area of ​​the control signal pin 23 of the memory card on the card body corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body, and the clock signal pin 21 of the memory card is adjacent to the control signal pin 23 of the memory card.

[0305] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0306] The fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are adjacent to and isolated from each other. The area of ​​the fourth data transmission pin 28 and the second data transmission pin 26 on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0307] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card, and the fourth data transmission pin 28 of the memory card is adjacent to the first data transmission pin 25.

[0308] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0309] In this embodiment, specifically, according to the above pin layout, the areas of the third data transmission pin 27 of the memory card, the clock signal pin 21 of the memory card, the control signal pin 23 of the memory card, and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32, and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the clock signal pin 31 on the Nano-SIM card is split into two pins, thereby obtaining the third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card, wherein the shape and size of the third data transmission pin 27 of the memory card and the clock signal pin 21 of the memory card are not limited. In addition, the shape and size of the control signal pin 23 of the memory card and the ground signal pin 24 of the memory card are not limited.

[0310] The areas of the second data transmission pin 26 of the memory card, the fourth data transmission pin 28 of the memory card, the first data transmission pin 25 of the memory card and the power supply pin 22 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, programming voltage / input signal pin 35 and ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the data transmission pin 34 of the Nano-SIM card is split into two pins, and then the fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are obtained, wherein the shape and size of the fourth data transmission pin 28 of the memory card and the second data transmission pin 26 of the memory card are not limited. In addition, the shape and size of the first data transmission pin 25 of the memory card and the power supply pin 22 of the memory card are not limited.

[0311] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0312] Fig.19 A schematic diagram of the structure of another memory card provided in an embodiment of the present application, Figure 1 The illustrated embodiment provides a memory card based on, Fig.19 As shown, the memory card includes four data transmission pins, which are a first data transmission pin 25, a second data transmission pin 26, a third data transmission pin 27 and a fourth data transmission pin 28.

[0313] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0314] The first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card are adjacent to and isolated from each other. The area of ​​the first data transmission pin 25 and the third data transmission pin 27 on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card, and the third data transmission pin 27 of the memory card is adjacent to the clock signal pin 21 of the memory card.

[0315] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0316] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0317] The control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are adjacent to and isolated from each other. The area of ​​the control signal pin 23 and the fourth data transmission pin 28 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card, and the fourth data transmission pin 28 of the memory card is adjacent to the second data transmission pin 26 of the memory card.

[0318] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0319] In this embodiment, specifically, according to the above pin layout, the areas of the clock signal pin 21 of the memory card, the third data transmission pin 27 of the memory card, the first data transmission pin 25 of the memory card and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the reset signal pin 32 of the Nano-SIM card is split into two pins, thereby obtaining the first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card, wherein the shape and size of the first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card are not limited. In addition, the shape and size of the clock signal pin 21 of the memory card and the power pin 22 of the memory card are not limited.

[0320] The areas of the second data transmission pin 26 of the memory card, the fourth data transmission pin 28 of the memory card, the control signal pin 23 of the memory card, and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, programming voltage / input signal pin 35, and ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card is split into two pins, and then the control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are obtained, wherein the shape and size of the control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are not limited. In addition, the shape and size of the second data transmission pin 26 of the memory card and the ground signal pin 24 of the memory card are not limited.

[0321] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0322] Fig. 20 A schematic diagram of the structure of another memory card provided in the embodiment of the present application, Figure 1 The illustrated embodiment provides a memory card based on, Fig. 20 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0323] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0324] The first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card are adjacent to and isolated from each other. The area of ​​the first data transmission pin 25 and the third data transmission pin 27 on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card, and the third data transmission pin 27 of the memory card is adjacent to the second data transmission pin 26 of the memory card.

[0325] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0326] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0327] The control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are adjacent to and isolated from each other. The area of ​​the control signal pin 23 and the fourth data transmission pin 28 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card, and the fourth data transmission pin 28 of the memory card is adjacent to the clock signal pin 21 of the memory card.

[0328] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0329] In this embodiment, specifically, according to the above pin layout, the areas of the second data transmission pin 26 of the memory card, the third data transmission pin 27 of the memory card, the first data transmission pin 25 of the memory card and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the reset signal pin 32 of the Nano-SIM card is split into two pins, thereby obtaining the first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card, wherein the shape and size of the first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card are not limited. In addition, the shape and size of the second data transmission pin 26 of the memory card and the ground signal pin 24 of the memory card are not limited.

[0330] The areas of the clock signal pin 21 of the memory card, the fourth data transmission pin 28 of the memory card, the control signal pin 23 of the memory card, and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, programming voltage / input signal pin 35, and ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card is split into two pins, and then the control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are obtained, wherein the shape and size of the control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are not limited. In addition, the shape and size of the clock signal pin 21 of the memory card and the power pin 22 of the memory card are not limited.

[0331] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0332] Fig.21 Another structural diagram of a memory card provided in the embodiment of the present application is as follows: Figure 1 The illustrated embodiment provides a memory card based on, Fig.21 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0333] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0334] The first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card are adjacent to and isolated from each other. The area of ​​the first data transmission pin 25 and the third data transmission pin 27 on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card, and the first data transmission pin 25 is adjacent to the second data transmission pin 26 of the memory card.

[0335] The area of ​​the ground signal pin 24 of the memory card on the card body corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body, and the third data transmission pin 27 of the memory card is adjacent to the ground signal pin 24 of the memory card.

[0336] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card;

[0337] The control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are adjacent to and isolated from each other. The area of ​​the control signal pin 23 and the fourth data transmission pin 28 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card, and the fourth data transmission pin 28 of the memory card is adjacent to the clock signal pin 21 of the memory card.

[0338] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card, and the control signal pin 23 of the memory card is connected to the power pin 22 of the memory card.

[0339] In this embodiment, specifically, according to the above pin layout, the areas of the second data transmission pin 26 of the memory card, the first data transmission pin 25 of the memory card, the third data transmission pin 27 of the memory card and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the reset signal pin 32 of the Nano-SIM card is split into two pins, thereby obtaining the first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card, wherein the shape and size of the first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card are not limited. In addition, the shape and size of the second data transmission pin 26 of the memory card and the ground signal pin 24 of the memory card are not limited.

[0340] The areas of the clock signal pin 21 of the memory card, the fourth data transmission pin 28 of the memory card, the control signal pin 23 of the memory card, and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, programming voltage / input signal pin 35, and ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card is split into two pins, and then the control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are obtained, wherein the shape and size of the control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are not limited. In addition, the shape and size of the clock signal pin 21 of the memory card and the power pin 22 of the memory card are not limited.

[0341] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0342] Fig. 22 Another structural diagram of a memory card provided in the embodiment of the present application is as follows: Figure 1 The illustrated embodiment provides a memory card based on, Fig. 22As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0343] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0344] The first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card are adjacent to and isolated from each other. The area of ​​the first data transmission pin 25 and the third data transmission pin 27 on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card, and the third data transmission pin 27 of the memory card is adjacent to the second data transmission pin 26 of the memory card.

[0345] The area of ​​the ground signal pin 24 of the memory card on the card body corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body, and the first data transmission pin 25 of the memory card is adjacent to the ground signal pin 24 of the memory card.

[0346] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0347] The control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are adjacent to and isolated from each other. The area of ​​the control signal pin 23 and the fourth data transmission pin 28 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card, and the control signal pin 23 of the memory card is adjacent to the clock signal pin 21 of the memory card.

[0348] The area of ​​the power pin 22 of the memory card on the card body corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body, and the fourth data transmission pin 28 of the memory card is adjacent to the power pin 22 of the memory card.

[0349] In this embodiment, specifically, according to the above pin layout, the areas of the second data transmission pin 26 of the memory card, the third data transmission pin 27 of the memory card, the first data transmission pin 25 of the memory card and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the reset signal pin 32 of the Nano-SIM card is split into two pins, thereby obtaining the first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card, wherein the shape and size of the first data transmission pin 25 of the memory card and the third data transmission pin 27 of the memory card are not limited. In addition, the shape and size of the second data transmission pin 26 of the memory card and the ground signal pin 24 of the memory card are not limited.

[0350] The areas of the clock signal pin 21 of the memory card, the control signal pin 23 of the memory card, the fourth data transmission pin 28 of the memory card and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, programming voltage / input signal pin 35 and ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card. It can be seen that the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card is split into two pins, and then the control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are obtained, wherein the shape and size of the control signal pin 23 of the memory card and the fourth data transmission pin 28 of the memory card are not limited. In addition, the shape and size of the clock signal pin 21 of the memory card and the power pin 22 of the memory card are not limited.

[0351] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0352] Fig.23 Another structural diagram of a memory card provided in the embodiment of the present application is as follows: Figure 1 The illustrated embodiment provides a memory card based on, Fig.23 As shown, the memory card includes four data transmission pins, which are a first data transmission pin 25, a second data transmission pin 26, a third data transmission pin 27 and a fourth data transmission pin 28.

[0353] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0354] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card.

[0355] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0356] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0357] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card.

[0358] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0359] The third data transmission pin 27 of the memory card is located between the power pin 22 and the second data transmission pin 26 of the memory card, and the third data transmission pin 27 is isolated from the power pin 22 and the second data transmission pin 26 of the memory card respectively, and the center point of the third data transmission pin 27 is located on the connecting line between the center point of the power pin 22 of the memory card and the center point of the second data transmission pin 26.

[0360] The fourth data transmission pin 28 of the memory card is located between the clock signal pin 21 of the memory card and the ground signal pin 24 of the memory card, and the fourth data transmission pin 28 is isolated from the clock signal pin 21 of the memory card and the ground signal pin 24 of the memory card, respectively. The center point of the fourth data transmission pin 28 is located on the connecting line between the center point of the clock signal pin 21 of the memory card and the center point of the ground signal pin 24 of the memory card.

[0361] In this embodiment, specifically, according to the above pin layout, the power pin 22 of the memory card, the first data transmission pin 25 of the memory card and the areas of the above three pins on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card.

[0362] The areas of the second data transmission pin 26 of the memory card, the control signal pin 23 of the memory card and the ground signal pin 24 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, the programming voltage / input signal pin 35 and the ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card.

[0363] The third data transmission pin 27 of the memory card is arranged between the power pin 22 of the memory card and the second data transmission pin 26 of the memory card. Preferably, the center point of the third data transmission pin 27 of the memory card is located on the connection line between the center point of the power pin 22 of the memory card and the center point of the second data transmission pin 26 of the memory card. The fourth data transmission pin 28 of the memory card is arranged between the clock signal pin 21 of the memory card and the ground signal pin 24 of the memory card. Preferably, the center point of the fourth data transmission pin 28 of the memory card is located on the connection line between the center point of the clock signal pin 21 of the memory card and the center point of the ground signal pin 24 of the memory card.

[0364] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0365] Fig.24 Another structural diagram of a memory card is provided in the embodiment of the present application. Figure 1 The illustrated embodiment provides a memory card based on, Fig.24 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0366] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0367] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card.

[0368] The area of ​​the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card.

[0369] The area of ​​the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0370] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card.

[0371] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card.

[0372] The third data transmission pin 27 of the memory card is located between the clock signal pin 21 of the memory card and the ground signal pin 24 of the memory card, and the third data transmission pin 27 is isolated from the clock signal pin 21 of the memory card and the ground signal pin 24 of the memory card, respectively. The center point of the third data transmission pin 27 is located on the connecting line between the center point of the clock signal pin 21 of the memory card and the center point of the ground signal pin 24 of the memory card.

[0373] The fourth data transmission pin 28 of the memory card is located between the power pin 22 and the second data transmission pin 26 of the memory card, and the fourth data transmission pin 28 is isolated from the power pin 22 and the second data transmission pin 26 of the memory card respectively, and the center point of the fourth data transmission pin 28 is located on the connecting line between the center point of the power pin 22 of the memory card and the center point of the second data transmission pin 26.

[0374] In this embodiment, specifically, according to the above pin layout, the areas of the clock signal pin 21 of the memory card, the first data transmission pin 25 of the memory card and the power pin 22 of the memory card on the card body of the memory card correspond to the areas of the clock signal pin 31, the reset signal pin 32 and the power pin 33 in the Nano-SIM card on the card body of the Nano-SIM card.

[0375] The areas of the ground signal pin 24 of the memory card, the control signal pin 23 of the memory card and the second data transmission pin 26 of the memory card on the card body of the memory card correspond to the areas of the data transmission pin 34, the programming voltage / input signal pin 35 and the ground signal pin 36 in the Nano-SIM card on the card body of the Nano-SIM card.

[0376] The third data transmission pin 27 of the memory card is arranged between the clock signal pin 21 of the memory card and the ground signal pin 24 of the memory card. Preferably, the center point of the third data transmission pin 27 of the memory card is located on the connection line between the center point of the clock signal pin 21 of the memory card and the center point of the ground signal pin 24 of the memory card. The fourth data transmission pin 28 of the memory card is arranged between the power supply pin 22 of the memory card and the second data transmission pin 26 of the memory card. Preferably, the center point of the fourth data transmission pin 28 of the memory card is located on the connection line between the center point of the power supply pin 22 of the memory card and the center point of the second data transmission pin 26 of the memory card.

[0377] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0378] Fig.25 Another structural diagram of a memory card provided in the embodiment of the present application is as follows: Figure 1 The illustrated embodiment provides a memory card based on, Fig.25 As shown, the memory card includes four data transmission pins, which are respectively a first data transmission pin 25 , a second data transmission pin 26 , a third data transmission pin 27 and a fourth data transmission pin 28 .

[0379] The area of ​​the clock signal pin 21 of the memory card on the card body of the memory card corresponds to the area of ​​the clock signal pin 31 of the Nano-SIM card on the card body of the Nano-SIM card.

[0380] The area of ​​the first data transmission pin 25 of the memory card on the card body of the memory card corresponds to the area of ​​the reset signal pin 32 of the Nano-SIM card on the card body of the Nano-SIM card.

[0381] The area of ​​the third data transmission pin 27 and the power pin 22 of the memory card on the card body of the memory card corresponds to the area of ​​the power pin 33 of the Nano-SIM card on the card body of the Nano-SIM card, and the power pin 22 of the memory card occupies a partial area of ​​the third data transmission pin 27 of the memory card, the power pin 22 of the memory card is isolated from the third data transmission pin 27 of the memory card, and the power pin 22 of the memory card is adjacent to the first data transmission pin 25 of the memory card.

[0382] The area of ​​the second data transmission pin 26 of the memory card on the card body of the memory card corresponds to the area of ​​the data transmission pin 34 of the Nano-SIM card on the card body of the Nano-SIM card.

[0383] The area of ​​the control signal pin 23 of the memory card on the card body of the memory card corresponds to the area of ​​the programming voltage / input signal pin 35 of the Nano-SIM card on the card body of the Nano-SIM card.

[0384] The area of ​​the fourth data transmission pin 28 and the ground signal pin 24 of the memory card on the card body of the memory card corresponds to the area of ​​the ground signal pin 36 of the Nano-SIM card on the card body of the Nano-SIM card, and the ground signal pin 24 of the memory card occupies a partial area of ​​the fourth data transmission pin 28 of the memory card, the ground signal pin 24 of the memory card is isolated from the fourth data transmission pin 28 of the memory card, and the ground signal pin 24 of the memory card is adjacent to the control signal pin 23 of the memory card.

[0385] In this embodiment, specifically, the areas of the clock signal pin 21 of the memory card, the first data transmission pin 25 of the memory card, the power pin 22 of the memory card, and the third data transmission pin 27 of the memory card on the memory card body correspond to the areas of the clock signal pin 31, the reset signal pin 32, and the power pin 33 in the Nano-SIM card on the Nano-SIM card body. It can be seen that the area of ​​the power pin 33 on the Nano-SIM card is split into two pins, thereby obtaining the third data transmission pin 27 of the memory card and the power pin 22 of the memory card, and making the power pin 22 of the memory card occupy part of the area of ​​the third data transmission pin 27 of the memory card, from Fig.25 It can be seen that the power pin 22 of the memory card occupies a corner of the third data transmission pin 27 of the memory card. The shape and size of the third data transmission pin 27 of the memory card and the power pin 22 of the memory card are not limited; and the shape and size of the clock signal pin 21 of the memory card and the first data transmission pin 25 of the memory card are not limited.

[0386] The areas of the second data transmission pin 26 of the memory card, the control signal pin 23 of the memory card, the ground signal pin 24 of the memory card and the fourth data transmission pin 28 of the memory card on the memory card body correspond to the areas of the data transmission pin 34, the programming voltage / input signal pin 35 and the ground signal pin 36 in the Nano-SIM card on the Nano-SIM card body. It can be seen that the area of ​​the ground signal pin 36 on the Nano-SIM card is split into two pins, thereby obtaining the fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card, and making the ground signal pin 24 of the memory card occupy part of the area of ​​the fourth data transmission pin 28 of the memory card, from Fig.25 It can be seen that the ground signal pin 24 of the memory card occupies a corner of the fourth data transmission pin 28 of the memory card. The shape and size of the fourth data transmission pin 28 of the memory card and the ground signal pin 24 of the memory card are not limited; and the shape and size of the second data transmission pin 26 of the memory card and the control signal pin 23 of the memory card are not limited.

[0387] Furthermore, the pins (or contacts, or connection terminals) of the memory card in this embodiment may have spacings between them, and the wiring of the memory card may be arranged on the surface of these spacings; or there may be no spacings, and the wiring of the memory card may be inside the card body of the memory card. In this embodiment, "corresponding" may also be referred to as a mapping relationship, and the description of the above embodiment may be referred to.

[0388] The present application further provides a terminal including the above-mentioned memory card. The memory card is usually used for applications with various products (e.g., terminals) to store digital data. Frequently, the memory card can be removed from the terminal so that the digital data stored by the memory card is portable. The memory card according to the present application can have a relatively small form factor and can be used to store digital data for a terminal such as a camera, a handheld or laptop computer, a network application device, a set-top box, a handheld or other small audio player / recorder, and a medical monitor.

[0389] Fig.26 A circuit diagram of a terminal provided in an embodiment of the present application, such as Fig.26As shown, the above-mentioned memory card can be inserted into the Nano-SIM card holder of the terminal, and the Nano-SIM card holder is provided with a first connection point 41 corresponding to the clock signal pin 21 of the memory card, a second connection point 42 corresponding to the power pin 22 of the memory card, a second connection point 43 corresponding to the control signal pin 23 of the memory card, a second connection point 44 corresponding to the ground signal pin 24 of the memory card, a second connection point 45 corresponding to the first data transmission pin 25 of the memory card, a second connection point 46 corresponding to the second data transmission pin 26 of the memory card, a second connection point 47 corresponding to the third data transmission pin 27 of the memory card, and a second connection point 48 corresponding to the fourth data transmission pin 28 of the memory card; after the memory card is inserted into the Nano-SIM card holder, each pin of the memory card contacts with its corresponding connection point respectively. The control chip of the terminal is provided with a first pin 51 connected to the first connection point 41, a second pin 52 connected to the second connection point 42, a third pin 53 connected to the second connection point 43, a fourth pin 54 connected to the second connection point 44, a fifth pin 55 connected to the second connection point 45, a sixth pin 56 connected to the second connection point 46, a seventh pin 57 connected to the second connection point 47, and an eighth pin 58 connected to the second connection point 48. Among them, the second pin 52 can be a power pin of the control chip, and the fourth pin 54 can be a ground signal pin of the control chip.

[0390] In addition, an SD interface and a SIM interface are provided in the terminal. The SD interface is provided with six pins, namely, a first SD pin, a second SD pin, a third SD pin, a fourth SD pin, a fifth SD pin, and a sixth SD pin; the SIM interface is provided with three pins, namely, a first SIM pin, a second SIM pin, and a third SIM pin.

[0391] Three switches 61 are provided in the control chip, and one end of each of the three switches 61 is connected one-to-one with any three pins among the first pin 51, the third pin 53, the fifth pin 55, the sixth pin 56, the seventh pin 57, and the eighth pin 58; the other three pins among the first pin 51, the third pin 53, the fifth pin 55, the sixth pin 56, the seventh pin 57, and the eighth pin 58 that are not connected to the switch 61 are respectively connected one-to-one with the three pins on the SD interface.

[0392] The remaining three pins on the SD interface that are not connected to the pins of the control chip are matched one by one with the other ends of the three switches 61 ; the three pins on the SIM interface are matched one by one with the other ends of the three switches 61 .

[0393] The control chip controls the other ends of the three switches 61 to be connected one-to-one with the remaining three pins on the SD interface that are not connected to the pins of the control chip according to the detection of the memory card, so that the memory card currently realizes the storage function; or, the control chip controls the other ends of the three switches 61 to be connected one-to-one with the three pins on the SIM interface according to the detection of the memory card, so that the memory card is converted into a SIM card to realize the communication function.

[0394] Preferably, a near field communication (NFC) structure 71 is provided, the output end of the NFC structure 71 corresponds to one end of another switch, and the seventh pin 57 corresponds to one end of the other switch; the other end of the other switch is connected to the second connection point 47. Thus, the output end of the NFC structure 71 is connected to one end of another switch, or the seventh pin 57 is connected to one end of the other switch.

[0395] In the above embodiments, memory cards and terminals are particularly discussed. The embodiments suitable for memory cards explained above serve as an exemplary purpose and are not meant to limit the present application. The technology disclosed in the present application can also apply memory cards to devices connected to and controlled or operated by a computing device. In addition to terminals, examples of applications that can be implemented on memory cards include wireless communication devices, global positioning system (GPS) devices, cellular devices, network interfaces, modems, disk storage systems, etc.

[0396] Many features and advantages of the present application are apparent from the written description, and it is intended that all such features and advantages be covered by the appended claims. In addition, since various modifications and variations are readily apparent to one skilled in the art, the present application is not limited to the precise structure and operation illustrated and described. Therefore, all such modifications and variations are within the scope of the present application.

Claims

1. A memory card, comprising a card body and a memory card interface, wherein the memory card interface is disposed on a surface of the card body; The memory card interface includes eight metal contacts. include: a first metal contact for transmitting a power signal, a second metal contact for transmitting a first data signal, a third metal contact for transmitting a control signal, a fourth metal contact for transmitting a clock signal, a fifth metal contact for transmitting a ground signal, a sixth metal contact for transmitting a second data signal, a seventh metal contact for transmitting a third data signal, and an eighth metal contact for transmitting a fourth data signal; The size of the memory card is the same as that of the Nano-SIM card; The card body includes a first side, a second side, a third side and a fourth side; The first side is parallel to the second side, and the third side is parallel to the fourth side; The distance between the third side and the fourth side is greater than the distance between the first side and the second side; A notch is provided at one corner of the card body, and the notch is located between the second side and the fourth side; The sixth metal contact, the third metal contact, the fifth metal contact and the eighth metal contact are sequentially distributed along the fourth side; The fourth metal contact, the second metal contact, the first metal contact and the seventh metal contact are sequentially distributed along the third side; The fourth metal contact and the sixth metal contact are adjacent to the second side; The seventh metal contact and the eighth metal contact are adjacent to the first side; When the memory card is set in the card holder, the first metal contact is electrically connected to the first spring sheet of the card holder, the fifth metal contact is electrically connected to the second spring sheet of the card holder, the second metal contact is electrically connected to the fifth spring sheet of the card holder, the third metal contact is electrically connected to the sixth spring sheet of the card holder, the fourth metal contact is electrically connected to the seventh spring sheet of the card holder, and the sixth metal contact is electrically connected to the eighth spring sheet of the card holder; When the Nano-SIM card is set in the card holder, the power contact of the Nano-SIM card is electrically connected to the first spring piece, the ground contact of the Nano-SIM card is electrically connected to the second spring piece, the reset signal pin of the Nano-SIM card is electrically connected to the fifth spring piece of the card holder, the programming voltage / input signal pin of the Nano-SIM card is electrically connected to the sixth spring piece of the card holder, the clock signal pin of the Nano-SIM card is electrically connected to the seventh spring piece of the card holder, and the data signal pin of the Nano-SIM card is electrically connected to the eighth spring piece of the card holder.

2. The memory card according to claim 1, It is characterized in that The memory card further comprises a storage unit and a control unit, wherein the storage unit and the control unit are arranged in the card body, the control unit is electrically connected to the storage unit, and the control unit is electrically connected to the memory card interface.

3. The memory card according to claim 1 or 2, It is characterized in that The memory card is a memory card based on one of the interface protocols of universal serial bus (USB), peripheral component interconnect express (PCIE), universal flash storage (UFS), multimedia card (MMC) or embedded multimedia card (EMMC).

4. The memory card according to claim 1 or 2, It is characterized in that When the memory card is set in the card holder, the seventh metal contact is electrically connected to the third spring piece of the card holder, and the eighth metal contact is electrically connected to the fourth spring piece of the card holder; When the Nano-SIM card is set in the card socket, the area of ​​the power contact of the Nano-SIM card on the card socket corresponds to the area of ​​the first metal contact and the seventh metal contact on the card socket, and the area of ​​the ground contact of the Nano-SIM card on the card socket corresponds to the area of ​​the fifth metal contact and the eighth metal contact on the card socket.

5. The memory card according to claim 1 or 2, It is characterized in that The length of the memory card is 12.3 mm, and the width of the memory card is 8.8 mm.

6. The memory card according to claim 1 or 2, It is characterized in that The seventh metal contact has an L-shape, and the eighth metal contact has an L-shape.

7. A terminal, comprising a card holder, wherein the card holder is used to set a memory card and a Nano-SIM card; the size of the memory card is the same as the size of the Nano-SIM card; The memory card comprises a card body and a memory card interface, wherein the memory card interface is arranged on a surface of the card body; The memory card interface includes eight metal contacts. include: a first metal contact for transmitting a power signal, a second metal contact for transmitting a first data signal, a third metal contact for transmitting a control signal, a fourth metal contact for transmitting a clock signal, a fifth metal contact for transmitting a ground signal, a sixth metal contact for transmitting a second data signal, a seventh metal contact for transmitting a third data signal, and an eighth metal contact for transmitting a fourth data signal; The card body includes a first side, a second side, a third side and a fourth side; The first side is parallel to the second side, and the third side is parallel to the fourth side; The distance between the third side and the fourth side is greater than the distance between the first side and the second side; A notch is provided at one corner of the card body, and the notch is located between the second side and the fourth side; The sixth metal contact, the third metal contact, the fifth metal contact and the eighth metal contact are sequentially distributed along the fourth side; The fourth metal contact, the second metal contact, the first metal contact and the seventh metal contact are sequentially distributed along the third side; The fourth metal contact and the sixth metal contact are adjacent to the second side; The seventh metal contact and the eighth metal contact are adjacent to the first side; When the memory card is set in the card holder, the first metal contact is electrically connected to the first spring sheet of the card holder, the fifth metal contact is electrically connected to the second spring sheet of the card holder, the second metal contact is electrically connected to the fifth spring sheet of the card holder, the third metal contact is electrically connected to the sixth spring sheet of the card holder, the fourth metal contact is electrically connected to the seventh spring sheet of the card holder, and the sixth metal contact is electrically connected to the eighth spring sheet of the card holder; When the Nano-SIM card is set in the card holder, the power contact of the Nano-SIM card is electrically connected to the first spring piece, the ground contact of the Nano-SIM card is electrically connected to the second spring piece, the reset signal pin of the Nano-SIM card is electrically connected to the fifth spring piece of the card holder, the programming voltage / input signal pin of the Nano-SIM card is electrically connected to the sixth spring piece of the card holder, the clock signal pin of the Nano-SIM card is electrically connected to the seventh spring piece of the card holder, and the data signal pin of the Nano-SIM card is electrically connected to the eighth spring piece of the card holder.

8. The terminal according to claim 7, It is characterized in that When the memory card is set in the card holder, the seventh metal contact is electrically connected to the third spring piece of the card holder, and the eighth metal contact is electrically connected to the fourth spring piece of the card holder; When the Nano-SIM card is set in the card socket, the area of ​​the power contact of the Nano-SIM card on the card socket corresponds to the area of ​​the first metal contact and the seventh metal contact on the card socket, and the area of ​​the ground contact of the Nano-SIM card on the card socket corresponds to the area of ​​the fifth metal contact and the eighth metal contact on the card socket.

9. The terminal according to claim 7 or 8, It is characterized in that The length of the memory card is 12.3 mm, and the width of the memory card is 8.8 mm.

10. A system comprising a terminal and a memory card, wherein the terminal comprises a card holder for arranging the memory card and the Nano-SIM card; the size of the memory card is the same as the size of the Nano-SIM card; The memory card comprises a card body and a memory card interface, wherein the memory card interface is arranged on a surface of the card body facing the card holder; The memory card interface includes eight metal contacts. include: a first metal contact for transmitting a power signal, a second metal contact for transmitting a first data signal, a third metal contact for transmitting a control signal, a fourth metal contact for transmitting a clock signal, a fifth metal contact for transmitting a ground signal, a sixth metal contact for transmitting a second data signal, a seventh metal contact for transmitting a third data signal, and an eighth metal contact for transmitting a fourth data signal; The card body includes a first side, a second side, a third side and a fourth side; The first side is parallel to the second side, and the third side is parallel to the fourth side; The distance between the third side and the fourth side is greater than the distance between the first side and the second side; A notch is provided at one corner of the card body, and the notch is located between the second side and the fourth side; The sixth metal contact, the third metal contact, the fifth metal contact and the eighth metal contact are sequentially distributed along the fourth side; The fourth metal contact, the second metal contact, the first metal contact and the seventh metal contact are sequentially distributed along the third side; The fourth metal contact and the sixth metal contact are adjacent to the second side; The seventh metal contact and the eighth metal contact are adjacent to the first side; When the memory card is set in the card holder, the first metal contact is electrically connected to the first spring sheet of the card holder, the fifth metal contact is electrically connected to the second spring sheet of the card holder, the second metal contact is electrically connected to the fifth spring sheet of the card holder, the third metal contact is electrically connected to the sixth spring sheet of the card holder, the fourth metal contact is electrically connected to the seventh spring sheet of the card holder, and the sixth metal contact is electrically connected to the eighth spring sheet of the card holder; When the Nano-SIM card is set in the card holder, the power contact of the Nano-SIM card is electrically connected to the first spring piece, the ground contact of the Nano-SIM card is electrically connected to the second spring piece, the reset signal pin of the Nano-SIM card is electrically connected to the fifth spring piece of the card holder, the programming voltage / input signal pin of the Nano-SIM card is electrically connected to the sixth spring piece of the card holder, the clock signal pin of the Nano-SIM card is electrically connected to the seventh spring piece of the card holder, and the data signal pin of the Nano-SIM card is electrically connected to the eighth spring piece of the card holder.

11. The system according to claim 10, It is characterized in that When the memory card is set in the card holder, the seventh metal contact is electrically connected to the third spring piece of the card holder, and the eighth metal contact is electrically connected to the fourth spring piece of the card holder; When the Nano-SIM card is set in the card socket, the area of ​​the power contact of the Nano-SIM card on the card socket corresponds to the area of ​​the first metal contact and the seventh metal contact on the card socket, and the area of ​​the ground contact of the Nano-SIM card on the card socket corresponds to the area of ​​the fifth metal contact and the eighth metal contact on the card socket.

12. The system according to claim 10 or 11, It is characterized in that The length of the memory card is 12.3 mm, and the width of the memory card is 8.8 mm.

Images