Method and apparatus for determining performance indicators of a field emission electron source

Abstract

The application discloses a kind of field emission electron source performance index determination method and device, comprising: in response to the input operation of interactive interface, the current array of field emission electron source, corresponding voltage array, the preset value of work function, the preset value of field enhancement factor, calculation mode are obtained;Current array and voltage array are first preprocessed and linearly fitted to obtain fitting formula;Fitting formula includes the value of first parameter and the value of second parameter;According to calculation mode, the preset value of work function or the preset value of field enhancement factor, the value of first parameter and the first preset formula of first parameter determine the parameter to be determined in first preset formula;According to the value of work function that has been determined, the value of field enhancement factor that has been determined, the value of second parameter and the second preset formula of second parameter determine field emission electron source performance index.The embodiment of the application can optimize the calculation process, save computing power, and can be widely applied to the performance index characterization of cold cathode electron source in the field of vacuum electron technology.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of computer technology and vacuum electron technology, and in particular to a field emission electron source performance index determination method and device. BACKGROUND

[0002] Field emission refers to the phenomenon of electron release from the surface of a cathode under the action of a strong electric field, and belongs to cold cathode emission. Field emission electron tubes are a breakthrough technology that allows electrons to fly out, and have advantages such as high efficiency, low power consumption, and small size, and can be applied to various electronic devices such as microscopes, displays, microwave sources, and X-ray machines.

[0003] The key performance indicators of a field emission electron source are of great significance to the research and application of the field emission electron source. At present, the key performance indicators of the field emission electron source generally involve bringing data into a theoretical formula for fitting calculation. Due to the involvement of complex calculation formulas, the calculation is cumbersome, with many steps and time and effort consuming. SUMMARY

[0004] Therefore, to solve one of the above problems, the purpose of the embodiments of the present application is to provide a field emission electron source performance index determination method and device, which can optimize the calculation process and save computing power.

[0005] In one aspect, the embodiments of the present application provide a field emission electron source performance index determination method, the performance index including an electron emission area, and the method comprising:

[0006] In response to an input operation of an interactive interface, a current array and a corresponding voltage array of a field emission electron source are obtained, a preset value of a work function and a preset value of a field enhancement factor are obtained, and a calculation mode is obtained;

[0007] The current array and the voltage array are first pre-processed and linearly fitted to obtain a fitting formula; the fitting formula includes a value of a first parameter and a value of a second parameter;

[0008] According to the calculation mode, the preset value of the work function or the preset value of the field enhancement factor, the value of the first parameter, and a first preset formula of the first parameter, a to-be-determined parameter in the first preset formula is determined; the first preset formula includes a to-be-determined work function or a to-be-determined field enhancement factor;

[0009] According to the determined work function value, the determined field enhancement factor value, the second parameter value and a second preset formula of the second parameter, a field emission electron source performance index is determined, the field emission electron source performance index including any one or more of an electron emission area, a current density, a number of electrons per unit area tunneling or a brightness of a cathode; wherein the number of electrons per unit area tunneling is determined according to the determined work function and the determined field enhancement factor value, and the electron emission area, the current density and the brightness of the cathode are determined according to the number of electrons per unit area tunneling.

[0010] Optionally, the calculation mode includes a fixed work function mode, and the first preset formula includes a first function including a to-be-determined field enhancement factor, and the to-be-determined parameter in the first preset formula is determined by the following steps:

[0011] According to the current value of the field enhancement factor and the first function, a current value of the first function is determined; a first value of the current value of the field enhancement factor is determined according to a first initial value;

[0012] According to the current value of the first function, the first preset formula, the preset value of the work function and the value of the first parameter, a next value of the field enhancement factor is determined;

[0013] It is determined whether the next value of the field enhancement factor and the current value of the field enhancement factor meet a first requirement, and if not, the next value of the field enhancement factor is taken as the current value of the field enhancement factor, and the step of determining the current value of the first function according to the current value of the field enhancement factor and the first function is continued until the next value of the field enhancement factor and the current value of the field enhancement factor meet the first requirement;

[0014] According to the preset value of the work function and the next value of the field enhancement factor, the to-be-determined parameter in the first preset formula is determined.

[0015] Optionally, it is determined whether the next value of the field enhancement factor and the current value of the field enhancement factor meet the first requirement, and specifically includes:

[0016] A first difference value between the next value of the field enhancement factor and the current value of the field enhancement factor is determined;

[0017] According to the first difference value and the next value of the field enhancement factor, a first quotient value is determined;

[0018] If the first quotient value is within a first preset range, the first requirement is met; otherwise, the first requirement is not met.

[0019] Optionally, the calculation mode includes a fixed field enhancement factor mode, and the to-be-determined parameter in the first preset formula is determined by the following steps:

[0020] determining a current value of the first function according to the current value of the work function and the first function; a first value of the current value of the work function being determined according to a second initial value;

[0021] determining a next value of the work function according to the current value of the first function, the first preset formula, the preset value of the field enhancement factor and the value of the first parameter;

[0022] determining whether an error between the next value of the work function and the current value of the work function meets a second requirement, and if not, taking the next value of the work function as the current value of the work function and continuing to execute the step of determining the current value of the first function according to the current value of the work function and the first function until the next value of the work function and the current value of the work function meet the second requirement;

[0023] determining the parameter to be determined in the first preset formula according to the preset value of the field enhancement factor and the next value of the work function.

[0024] Optionally, the determining whether the error between the next value of the work function and the current value of the work function meets the second requirement specifically comprises:

[0025] determining a second difference between the next value of the work function and the current value of the work function;

[0026] determining a second quotient value according to the second difference and the next value of the work function;

[0027] if the second quotient value is within a second preset range, the second requirement is met; otherwise, the second requirement is not met.

[0028] Optionally, the electron emission area, the current density or the brightness of the cathode is determined by the following method:

[0029] determining and displaying an electron emission area according to the determined value of the work function, the determined value of the field enhancement factor, the value of the second parameter and a second preset formula of the second parameter;

[0030] determining a current density according to the current array and the electron emission area;

[0031] determining a brightness of the cathode according to the current density and a preset brightness formula.

[0032] Optionally, the number of electrons per unit area, the current density or the electron emission area is determined by the following method:

[0033] in response to an input operation of an interactive interface, obtaining a temperature value, a work function value and an electric field strength value;

[0034] determine a number of electron tunneling per unit area of different energy according to the temperature value, the work function value, the electric field intensity value and a preset power formula;

[0035] perform a second preprocessing according to the number of electron tunneling per unit area of different energy to obtain a current density;

[0036] determine the electron emission area according to the current array and the current density;

[0037] determine the brightness of the cathode according to the electron emission area and a preset brightness formula.

[0038] In another aspect, an embodiment of the present application provides a field emission electron source performance index determination device, comprising:

[0039] A first module is configured to acquire a current array and a corresponding voltage array of a field emission electron source, acquire a preset value of a work function and a preset value of a field enhancement factor, and acquire a calculation mode in response to an input operation of an interactive interface.

[0040] A second module is configured to perform a first preprocessing and linear fitting on the current array and the voltage array to obtain a fitting formula; the fitting formula comprises a value of a first parameter and a value of a second parameter.

[0041] A third module is configured to determine a to-be-determined parameter in a first preset formula according to the calculation mode, the preset value of the work function or the preset value of the field enhancement factor, the value of the first parameter and the first preset formula of the first parameter; the first preset formula comprises a to-be-determined work function or a to-be-determined field enhancement factor.

[0042] A fourth module is configured to determine a field emission electron source performance index according to the determined value of the work function, the determined value of the field enhancement factor, the value of the second parameter and a second preset formula of the second parameter; the field emission electron source performance index comprises any one or more of an electron emission area, a current density, a number of electron tunneling per unit area or a brightness of a cathode; wherein the number of electron tunneling per unit area is determined according to the determined values of the work function and the field enhancement factor, and the electron emission area, the current density and the brightness of the cathode are determined according to the number of electron tunneling per unit area.

[0043] In another aspect, an embodiment of the present application provides a field emission electron source performance index determination device, comprising:

[0044] at least one processor;

[0045] at least one memory configured to store at least one program;

[0046] When the at least one program is executed by the at least one processor, the at least one processor implements the above method.

[0047] In another aspect, an embodiment of the present application provides a computer readable storage medium, which stores a processor executable program, and the processor executable program is used for executing the above method when executed by a processor.

[0048] The implementation of the embodiment of the present application has the following beneficial effects: the method of the embodiment includes: in response to an input operation of an interactive interface, obtaining a current array and a corresponding voltage array of a field emission electron source, obtaining a preset value of a work function and a preset value of a field enhancement factor, and obtaining a calculation mode; performing first preprocessing and linear fitting on the current array and the voltage array to obtain a fitting formula; the fitting formula includes a value of a first parameter and a value of a second parameter; determining a to-be-determined parameter in a first preset formula of the first parameter according to the calculation mode, the preset value of the work function or the preset value of the field enhancement factor, the value of the first parameter, and the first preset formula of the first parameter; determining and displaying an electron emission area according to the determined value of the work function, the determined value of the field enhancement factor, the value of the second parameter, and a second preset formula of the second parameter; by linear fitting on the current array and the voltage array, the values of the first parameter and the second parameter are obtained, and then the performance index of the field emission electron source is calculated according to the correlation between the to-be-determined parameters in the first preset formula of the first parameter and the second preset formula of the second parameter and the determined parameters, so as to optimize the calculation process and save computing power. BRIEF DESCRIPTION OF DRAWINGS

[0049] Figure 1 is a step flowchart of a field emission electron source performance index determination method provided by an embodiment of the present application;

[0050] Figure 2 is a schematic diagram of an interactive interface provided by an embodiment of the present application;

[0051] Figure 3 is a fitting curve diagram of a current array and a voltage array, a field enhancement factor result diagram, and a field emission electron source performance index result diagram provided by an embodiment of the present application;

[0052] Figure 4 is a schematic diagram of another interactive interface provided by an embodiment of the present application;

[0053] Figure 5 is a schematic diagram of a number of electrons per unit area and a current density value provided by an embodiment of the present application;

[0054] Figure 6 is a structural block diagram of a field emission electron source performance index determination device provided by an embodiment of the present application;

[0055] Figure 7 is a structural block diagram of another field emission electron source performance index determination device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0056] The present application will be further described below in conjunction with the drawings and specific embodiments. For the step numbers in the following embodiments, they are only set for the convenience of description, and the order between the steps is not limited in any way, and the execution order of each step in the embodiments can be adaptively adjusted according to the understanding of those skilled in the art.

[0057] As shown in Figure 1 , an embodiment of the present application provides a field emission electron source performance index determination method, the performance index including an electron emission area, the method including steps S100 to S400.

[0058] S100, in response to an input operation of an interactive interface, obtaining a current array and a corresponding voltage array of a field emission electron source, obtaining a preset value of a work function and a preset value of a field enhancement factor, and obtaining a calculation mode.

[0059] It should be noted that the input operation of the interactive interface is determined according to actual application, and the present embodiment does not make specific limitation, for example, file reading, text input or check operation, etc. The calculation mode includes a fixed work function mode and a fixed field enhancement factor mode.

[0060] Referring to Figure 2 , Figure 2 , an illustrative diagram of the interactive interface, the current array and the corresponding voltage array of the field emission electron source can be obtained by file reading, for example, an excel data file in a specific format is input, the data set is usually obtained by experiment, the data content is a column of voltage values and a column of current values. Click the

Open File

[0061] S200, first preprocessing and linear fitting the current array and the voltage array to obtain a fitting formula; the fitting formula includes a value of a first parameter and a value of a second parameter.

[0062] The first preprocessing includes but is not limited to integrating the current array and the voltage array to form two-dimensional data and performing data transformation.

[0063] In one embodiment, the acquired current array and voltage array are preprocessed to obtain two-dimensional data as shown in Table 1.

[0064] Table 1

[0065] Serial number Current (A) Voltage (V) 0 1.6E-09 300 1 2.1E-09 305 2 2.7E-09 310 3 3.4E-09 315 4 4.2E-09 320

[0066] Through calculation based on the I and V data columns, 1 / V and ln(I / V 2 ) two columns of data are obtained, which are theoretically linearly related, and the specific results are shown in Table 2.

[0067] Table 2

[0068]

[0069]

[0070] Linear fitting is performed on the 1 / V and ln(I / V 2 ) two columns of data to obtain the slope k and intercept b of the fitting formula ln(I / V 2 ) = k x 1 / V + b.

[0071] wherein k represents the first parameter and b represents the second parameter. The value of the first parameter and the value of the second parameter can be determined according to the above data and the fitting formula. Referring to Figure 3 (a) and (b) in Figure 3 (a) represents the original data of I and V, Figure 3 (b) represents the fitting curve of 1 / V and ln(I / V 2 ), and in one embodiment, the coincidence degree of the fitting curve reaches 99.8%.

[0072] S300, determining the to-be-determined parameter in the first preset formula according to the calculation mode, the preset value of the work function or the preset value of the field enhancement factor, the value of the first parameter, and the first preset formula of the first parameter; the first preset formula includes a to-be-determined work function or a to-be-determined field enhancement factor.

[0073] Through the selected fixed work function or fixed field enhancement factor different mode, one of the preset value of the work function or the preset value of the field enhancement factor corresponding to the calculation mode is calculated to determine the to-be-determined parameter in the first preset formula.

[0074] In theory, k = -s y c2φ 3 / 2 / β, b = ln(Ac1β 2 r / φ), wherein c1 and c2 are constants, y = cF1 / 2 / φ, c is a constant, F is the electric field intensity, φ is the work function, F = β x V, β is the field enhancement factor, V is the voltage value in the original data, A is the electron emission area, A is the parameter to be calculated. In the formula of k and b, there are three independent parameters φ, β and A, and theoretically the value of each parameter cannot be obtained. φ can be obtained by the theoretical value of the physical properties of the cathode material, and β can be obtained by the geometry of the cathode structure.

[0075] S400, determining the field emission electron source performance index according to the determined value of the work function, the determined value of the field enhancement factor, the value of the second parameter and the second preset formula of the second parameter, the field emission electron source performance index including any one or more of the electron emission area, the current density, the number of electron tunneling per unit area or the brightness of the cathode; wherein the number of electron tunneling per unit area is determined according to the determined work function and the determined value of the field enhancement factor, and the emission area, the current density and the brightness of the cathode are determined according to the number of electron tunneling per unit area.

[0076] When the value of the work function and the value of the field enhancement factor in the first preset formula are determined, the value of the work function and the value of the field enhancement factor in the first preset formula are substituted into the second preset formula to calculate the electron emission area.

[0077] Optionally, the calculation mode includes a fixed work function mode, the first preset formula includes a first function, the first function includes a to-be-determined field enhancement factor, and the to-be-determined parameter in the first preset formula is determined by the following manner:

[0078] S310A, determining the current value of the first function according to the current value of the field enhancement factor and the first function; the first value of the current value of the field enhancement factor is determined according to the first initial value;

[0079] S320A, determining the next value of the field enhancement factor according to the current value of the first function, the first preset formula, the preset value of the work function and the value of the first parameter;

[0080] S330A, determining whether the next value of the field enhancement factor and the current value of the field enhancement factor meet the first requirement, if not, taking the next value of the field enhancement factor as the current value of the field enhancement factor, and continuing to execute the step of determining the current value of the first function according to the current value of the field enhancement factor and the first function until the next value of the field enhancement factor and the current value of the field enhancement factor meet the first requirement;

[0081] S340A, determining the to-be-determined parameter in the first preset formula according to the preset value of the work function and the next value of the field enhancement factor.

[0082] During the calculation, the work function φ input through the interface is used and remains unchanged throughout the calculation. The preset initial field enhancement factor β is used and updated in each calculation until the final rate of change of β meets the requirements.

[0083] The calculation begins, with k, c2, and φ known. In a specific embodiment, β0 is preset to 1 × 10⁻⁶. 6 According to Calculate s, then substitute s into k = -s y c2φ 3 / 2 / β, obtain β1, then according to Calculate s, and substitute k = -s y c2φ 3 / 2 / β, calculate β2, and repeat this process several times to obtain a stable β. For the input Excel data file, a corresponding β value can be calculated for each data point. See also Figure 3 (c) in the middle Figure 3 (c) in the figure represents the result of the field enhancement factor under the fixed work function mode.

[0084] At this point, b, β, c1, and φ are known. Substituting these values ​​into the formula b = ln(Ac1β) 2 By calculating R / φ, A can be directly obtained, and a corresponding A value can be calculated for each data point. This completes the calculation of the emission area A for each data point in the data file. See also... Figure 3 (d) in the middle Figure 3 In the diagram, (d) represents the result of the emission area under the fixed work function mode.

[0085] Optionally, determining whether the next value of the field enhancement factor satisfies the first requirement compared to the current value of the field enhancement factor specifically includes:

[0086] S331A, Determine the first difference between the next value of the field enhancement factor and the current value of the field enhancement factor;

[0087] S332A. Determine the first quotient value based on the first difference and the next value of the field enhancement factor;

[0088] S333A. If the first quotient is within the first preset range, the first requirement is met; otherwise, the first requirement is not met.

[0089] Specifically, the following formula is used to calculate whether the next value of the field enhancement factor and the current value of the field enhancement factor meet the first requirement.

[0090] -P<(β i+1 -β i ) / β i+1 <P

[0091] Where, β i+1β represents the next value of the field enhancement factor i P represents the current value of the field enhancement factor, and P represents the boundary of the first preset range. P is determined according to actual application, and the embodiment is not specifically limited, for example, P = 0.01%, wherein the smaller the value of P is theoretically, the better.

[0092] Optionally, the calculation mode includes a fixed field enhancement factor mode, and the to-be-determined parameter in the first preset formula is determined by the following method:

[0093] S310B, determining a current value of the first function according to the current value of the work function and the first function; a first value of the current value of the work function is determined according to a second initial value;

[0094] S320B, determining a next value of the work function according to the current value of the first function, the first preset formula, a preset value of the field enhancement factor and a value of the first parameter;

[0095] S330B, determining whether an error between the next value of the work function and the current value of the work function meets a second requirement, if not, taking the next value of the work function as the current value of the work function, and continuing to execute the step of determining the current value of the first function according to the current value of the work function and the first function until the next value of the work function and the current value of the work function meet the second requirement;

[0096] S340B, determining the to-be-determined parameter in the first preset formula according to the preset value of the field enhancement factor and the next value of the work function.

[0097] During the calculation, the work function β input by the interface is used and remains unchanged during the calculation, the preset initial work function φ is used and updated in each calculation, and finally the change rate of φ meets the second requirement.

[0098] Starting calculation, k, c2, β are known, in a specific embodiment, the preset φ is 2.5, which can be determined according to Calculate s, and bring s into k =-s y c2φ 3 / 2 / β, φ1 is obtained, and then φ2 is obtained according to Calculate s, and bring s into k =-s y c2φ 3 / 2 / β, φ2 is obtained, and the stable φ is obtained by repeating the above steps for several times. For the input excel data file, a corresponding φ value can be calculated for each data point.

[0099] At this time, b, β, c1, φ are known, there are different methods to calculate the current density and the emission area, and further calculate the brightness and other parameters based on the current density and the emission area.

[0100] The first method directly calculates the current density according to the theoretical formula, and then further divides the current density by the total current to obtain the emission area. At this time, β is known, the electric field strength = field enhancement factor x voltage value, that is, F = β x V, V is the test voltage, that is, the voltage value in Table 1, and the electric field strength F corresponding to each data point is calculated. The electric field strength F of each data point and the work function φ of the material are known, and the current density at this time at room temperature can be calculated according to the theoretical calculation. According to the formula P(W) = D(W)N(W), the total number of tunneling electrons per unit time per unit area Q is obtained by integrating P(W) in the range of 0 to infinity, and the current density J = Q / 6.24x10 18 After obtaining the current density, the total current of the test, that is, the current value in Table 1, is divided by the current density, A = I / J, and the emission area A can be obtained.

[0101] The second method continues to calculate the emission area using the physical meaning of the linear fitting formula, and calculates the current density and other parameters according to the calculation of the emission area. The obtained parameters b, β, c1, φ, etc. are brought into the formula b = ln(Ac1β 2 r / φ), and A can be directly calculated and solved. Each data point can calculate a corresponding A value. At this time, the calculation of the emission area A of each data point in the data file is completed. After obtaining the emission area A, the total current of the test, that is, the current value in Table 1, is divided by the emission area, J = I / A, and the current density can be obtained.

[0102] For the same set of data, the current density values obtained by the above two methods are basically the same.

[0103] Optionally, it is determined whether the error between the next value of the work function and the current value of the work function meets the second requirement, which specifically includes:

[0104] S331B, determining a second difference between the next value of the work function and the current value of the work function;

[0105] S332B, determining a second quotient value according to the second difference and the next value of the work function;

[0106] S333B, if the second quotient value is within a second preset range, the second requirement is met; otherwise, the second requirement is not met.

[0107] Specifically, the next value of the work function and the current value of the work function are determined whether they meet the second requirement according to the following formula.

[0108] -Q<(φ i+1 -φ i ) / φ i+1 <Q

[0109] Wherein, φ i+1 represents the next value of the work function, and φ iThe current value of the work function is represented by Q, and the boundary of the first preset range is represented by Q. Q is determined according to actual application, and the embodiment does not make specific limitation, for example, Q = 0.01%, wherein the Q value is theoretically smaller the better.

[0110] It should be noted that in the calculation process, β or φ is calculated by a method of loop iteration to avoid solving complex equations, further optimize the calculation method, and reduce the computing power.

[0111] Optionally, the electron emission area or the current density or the brightness of the cathode is determined by the following method:

[0112] S510, determining and displaying the electron emission area according to the determined value of the work function, the determined value of the field enhancement factor, the value of the second parameter, and the second preset formula of the second parameter;

[0113] S520, determining the current density according to the current array and the electron emission area;

[0114] S530, determining the brightness of the cathode according to the current density and the preset brightness formula.

[0115] When the value of the work function and the value of the field enhancement factor in the first preset formula are determined, the value of the work function and the value of the field enhancement factor in the first preset formula are substituted into the second preset formula to calculate the electron emission area.

[0116] In a specific embodiment, the brightness formula is: J is the current density, J = I / A, I is the current data column in the input excel file, A is the emission area calculated above, and d is a function related to y (y = cF 1 / 2 / φ). At this time, the brightness of the cathode can be calculated. See Figure 3 (e) and (f) in FIG. 6, Figure 3 (e) in FIG. 6 represents a result graph of the current density in the fixed work function mode, Figure 3 (f) in FIG. 6 represents a result graph of the brightness of the cathode in the fixed work function mode.

[0117] Optionally, the number of electrons per unit area or the current density or the electron emission area is determined by the following method:

[0118] S610, in response to the input operation of the interactive interface, acquiring the temperature value, the work function value, and the electric field intensity value;

[0119] S620, determining the number of electrons per unit area of different energies according to the temperature value, the work function value, the electric field intensity value, and the preset power formula;

[0120] S630, performing a second preprocessing on the number of electrons per unit area of different energies to obtain the current density;

[0121] S640, determining the electron emission area according to the current array and the current density;

[0122] S650, determining the brightness of the cathode according to the electron emission area and a preset brightness formula.

[0123] Referring to Figure 4 , the interactive interface is further provided with a "field emission energy dispersion calculation" area. A suitable work function, temperature and electric field intensity value are selected, a

save result

start automatic calculation

[0124] The number of electrons per unit area tunneling at different energies is calculated by a theoretical formula P(W)=D(W)N(W). The number of electrons per unit area tunneling at different energies calculated above is integrated and linearly calculated to obtain the current density value. Here, the current density value of the cold cathode field emission at a certain temperature, work function and electric field intensity is theoretically obtained. Referring to Figure 5 , the number of electrons per unit area tunneling is as shown in (a) of Figure 5 , and the current density value is as shown in (b) of Figure 5 . After obtaining the current density, the total current I is divided by the current density J, A=I / J, to obtain the emission area A.

[0125] The embodiment of the present application has the following beneficial effects: the method of the embodiment includes: in response to an input operation of an interactive interface, obtaining a current array and a corresponding voltage array of a field emission electron source, obtaining a preset value of a work function and a preset value of a field enhancement factor, and obtaining a calculation mode; performing first preprocessing and linear fitting on the current array and the voltage array to obtain a fitting formula; the fitting formula includes a value of a first parameter and a value of a second parameter; determining a to-be-determined parameter in a first preset formula of the first parameter according to the calculation mode, the preset value of the work function or the preset value of the field enhancement factor, the value of the first parameter and the first preset formula of the first parameter; determining and displaying an electron emission area according to the determined value of the work function, the determined value of the field enhancement factor, the value of the second parameter and a second preset formula of the second parameter; and calculating the electron emission area, brightness, current density value and the like according to the correlation between the to-be-determined parameters in the first preset formula of the first parameter and the second preset formula of the second parameter and the already determined parameters by linear fitting on the current array and the voltage array, so as to optimize the calculation process and save computing power.

[0126] Referring to Figure 6 , the embodiment of the present application provides a field emission electron source performance index determination device, which includes:

[0127] The first module is configured to acquire a current array and a corresponding voltage array of the field emission electron source, acquire a preset value of a work function and a preset value of a field enhancement factor, and acquire a calculation mode in response to an input operation of the interactive interface.

[0128] The second module is configured to perform first preprocessing and linear fitting on the current array and the voltage array to obtain a fitting formula, wherein the fitting formula comprises a value of a first parameter and a value of a second parameter.

[0129] The third module is configured to determine a to-be-determined parameter in a first preset formula according to the calculation mode, the preset value of the work function or the preset value of the field enhancement factor, the value of the first parameter, and the first preset formula, wherein the first preset formula comprises the to-be-determined work function or the to-be-determined field enhancement factor.

[0130] The fourth module is configured to determine a performance index of the field emission electron source according to the determined value of the work function, the determined value of the field enhancement factor, the value of the second parameter, and a second preset formula of the second parameter, wherein the performance index of the field emission electron source comprises any one or more of an electron emission area, a current density, a number of electrons per unit area, or a brightness of a cathode, the number of electrons per unit area is determined according to the determined value of the work function and the determined value of the field enhancement factor, and the electron emission area, the current density, and the brightness of the cathode are determined according to the number of electrons per unit area.

[0131] It can be seen that the content in the method embodiment is applicable to the device embodiment, the device embodiment specifically implements the same functions as the method embodiment, and achieves the same beneficial effects as the method embodiment.

[0132] Referring to Figure 7 The device embodiment of the present application provides a device for determining a performance index of a field emission electron source, which comprises:

[0133] at least one processor;

[0134] at least one memory configured to store at least one program;

[0135] When the at least one program is executed by the at least one processor, the at least one processor implements the method described above.

[0136] The memory, as a non-transitory computer readable storage medium, can be used to store non-transitory software programs and non-transitory computer executable programs. The memory can include a high-speed random access memory, and can also include a non-transitory memory, such as at least one magnetic disk storage device, a flash memory device, or other non-transitory solid-state memory device. In some embodiments, the memory can optionally include remote memory that is remotely located relative to the processor, and the remote memory can be connected to the processor through a network. Examples of the network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and a combination thereof.

[0137] It can be seen that the contents in the method embodiments are applicable to the device embodiments, the device embodiments specifically implement the same functions as the method embodiments, and achieve the same beneficial effects as the method embodiments.

[0138] In addition, the embodiments of the present application further disclose a computer program product or a computer program, which is stored in a computer readable storage medium. The processor of the computer device can read the computer program from the computer readable storage medium, and the processor executes the computer program, so that the computer device executes the above-mentioned method. Similarly, the contents in the method embodiments are applicable to the storage medium embodiments, the storage medium embodiments specifically implement the same functions as the method embodiments, and achieve the same beneficial effects as the method embodiments.

[0139] The embodiments of the present application further provide a computer readable storage medium, which stores a program executable by a processor, and the program executable by the processor is used to implement the above-mentioned method when the processor executes the program.

[0140] It is to be understood that all or some of the steps, systems, etc. in the methods disclosed above can be performed by software, firmware, hardware, and / or any suitable combination thereof. Some or all of the physical components can be implemented as software executed by a processor, such as a central processing unit, a digital signal processor, or a micro-processing unit, as hardware, or as an integrated circuit, such as an application- specific integrated circuit. Such software can be distributed on computer readable media, which can comprise computer storage media (or non-transitory media), and communication media (or transitory media). As is well known to those of ordinary skill in the art, computer storage media includes all computer-readable media in which data, computer executable instructions, or other computer readable data is / are publicized, embodied, or otherwise accessed. Computer storage media does not include communication media unless the communication media facilitates access to computer readable data. By way of example, and not limitation, computer storage media can include random- access memory (RAM), read-only memory (ROM), EEPROM, flash memory, or other memory technology, CD-ROM, digital versatile disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tapes, magnetic disk storage, or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer. Further, as is well known to those of ordinary skill in the art, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media. The term "modulated data signal" means a signal that has one or more of its characteristics changed or set in a manner so as to encode information in the signal. By way of example, and not limitation, communication media includes wired media such as a wired network or direct-wired connection, and wireless media such as wireless networks, cellular telephone connections, RF data links, Bluetooth connections, and the like.

[0141] The above description is that of the preferred embodiments of the application. Various modifications and changes can be made thereto without departing from the spirit of the application, which is defined by the scope of the following claims.

Claims

1. A method for determining the performance indicators of a field emission electron source, characterized in that, The method includes: In response to input operations on the interactive interface, obtain the current array and corresponding voltage array of the field emission electron source, obtain the preset value of the work function and the preset value of the field enhancement factor, and obtain the calculation mode; The current array and the voltage array are preprocessed and linearly fitted to obtain a fitting formula; the fitting formula includes the values ​​of the first parameter and the second parameter, and the fitting formula is: ln(I / V) 2 I = k × 1 / V + b, where I represents current, V represents voltage, k represents the first parameter, and b represents the second parameter; The parameter to be determined in the first preset formula is determined according to the calculation mode, the preset value of the work function or the preset value of the field enhancement factor, the value of the first parameter and the first preset formula of the first parameter; the first preset formula includes the work function to be determined or the field enhancement factor to be determined; the calculation mode includes a fixed work function mode or a fixed field enhancement factor mode; The performance indicators of the field emission electron source are determined based on the determined work function value, the determined field enhancement factor value, the value of the second parameter, and the second preset formula of the second parameter. The performance indicators of the field emission electron source include any one or more of electron emission area, current density, electron tunneling per unit area, or cathode brightness. The electron tunneling per unit area is determined based on the determined work function and the determined field enhancement factor value, and the emission area, the current density, and the cathode brightness are determined based on the electron tunneling per unit area.

2. The method according to claim 1, characterized in that, The calculation mode includes a fixed work function mode, the first preset formula includes a first function, the first function includes a field enhancement factor to be determined, and the parameters to be determined in the first preset formula are determined in the following way: The current value of the first function is determined based on the current value of the field enhancement factor and the first function; The first value of the current value of the field enhancement factor is determined based on the first initial value; The next value of the field enhancement factor is determined based on the current value of the first function, the first preset formula, the preset value of the work function, and the value of the first parameter. Determine whether the next value of the field enhancement factor and the current value of the field enhancement factor meet the first requirement. If not, take the next value of the field enhancement factor as the current value of the field enhancement factor, and continue to execute the step of determining the current value of the first function based on the current value of the field enhancement factor and the first function, until the next value of the field enhancement factor and the current value of the field enhancement factor meet the first requirement. The parameters to be determined in the first preset formula are determined based on the preset value of the work function and the next value of the field enhancement factor.

3. The method according to claim 2, characterized in that, Determining whether the next value of the field enhancement factor and the current value of the field enhancement factor satisfy the first requirement specifically includes: Determine the first difference between the next value of the field enhancement factor and the current value of the field enhancement factor; The first quotient is determined based on the first difference and the next value of the field enhancement factor; If the first quotient is within a first preset range, the first requirement is met; otherwise, the first requirement is not met.

4. The method according to claim 1, characterized in that, The calculation mode includes a fixed field enhancement factor mode, and the first preset formula includes a first function. The parameters to be determined in the first preset formula are determined in the following way: The current value of the first function is determined based on the current value of the work function and the first function; The first value of the current value of the work function is determined based on the second initial value; The next value of the work function is determined based on the current value of the first function, the first preset formula, the preset value of the field enhancement factor, and the value of the first parameter. Determine whether the error between the next value of the work function and the current value of the work function meets the second requirement. If not, take the next value of the work function as the current value of the work function and continue to execute the step of determining the current value of the first function based on the current value of the work function and the first function, until the next value of the work function and the current value of the work function meet the second requirement. The parameters to be determined in the first preset formula are determined based on the preset value of the field enhancement factor and the next value of the work function.

5. The method according to claim 4, characterized in that, The step of determining whether the error between the next value of the work function and the current value of the work function meets the second requirement specifically includes: Determine a second difference between the next value of the work function and the current value of the work function; The second quotient is determined based on the second difference and the next value of the work function; If the second quotient is within the second preset range, it meets the second requirement; otherwise, it does not meet the second requirement.

6. The method according to any one of claims 1-5, characterized in that, The electron emission area, the current density, or the brightness of the cathode is determined by the following method: The electron emission area is determined and displayed based on the determined work function value, the determined field enhancement factor value, the value of the second parameter, and the second preset formula of the second parameter; The current density is determined based on the current array and the electron emission area; The brightness of the cathode is determined based on the current density and a preset brightness formula.

7. The method according to any one of claims 1-5, characterized in that, The number of electron tunnelings per unit area, the current density, the electron emission area, or the brightness of the cathode are determined by the following methods: In response to input operations on the interactive interface, the temperature value, work function value, and electric field strength value are obtained; The number of electrons tunneling per unit area for different energies is determined based on the temperature value, the work function value, the electric field strength value, and the preset power formula. A second preprocessing step is performed based on the number of electron tunnelings per unit area at different energies to obtain the current density; The electron emission area is determined based on the current array and the current density; The brightness of the cathode is determined based on the electron emission area and a preset brightness formula.

8. A device for determining the performance indicators of a field emission electron source, characterized in that, include: The first module is used to respond to input operations on the interactive interface, obtain the current array and corresponding voltage array of the field emission electron source, obtain the preset value of the work function and the preset value of the field enhancement factor, and obtain the calculation mode. The second module is used to perform a first preprocessing and linear fitting on the current array and the voltage array to obtain a fitting formula; the fitting formula includes the values ​​of the first parameter and the second parameter, and the fitting formula is: ln(I / V) 2 I = k × 1 / V + b, where I represents current, V represents voltage, k represents the first parameter, and b represents the second parameter; The third module is used to determine the parameter to be determined in the first preset formula based on the calculation mode, the preset value of the work function or the preset value of the field enhancement factor, the value of the first parameter and the first preset formula of the first parameter; the first preset formula includes the work function to be determined or the field enhancement factor to be determined; The calculation mode includes a fixed work function mode or a fixed field enhancement factor mode; The fourth module is used to determine the performance indicators of the field emission electron source based on the determined work function value, the determined field enhancement factor value, the value of the second parameter, and the second preset formula of the second parameter. The performance indicators of the field emission electron source include any one or more of electron emission area, current density, electron tunneling per unit area, or cathode brightness. The electron tunneling per unit area is determined based on the determined work function and the determined field enhancement factor value, and the emission area, the current density, and the cathode brightness are determined based on the electron tunneling per unit area.

9. A device for determining the performance indicators of a field emission electron source, characterized in that, include: At least one processor; At least one memory for storing at least one program; When the at least one program is executed by the at least one processor, the at least one processor performs the method as described in any one of claims 1-7.

10. A computer-readable storage medium storing a processor-executable program, characterized in that, The processor-executable program, when executed by the processor, is used to perform the method as described in any one of claims 1-7.

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