Miniature LED display panel

Abstract

A micro-LED display panel includes a micro-pixel array region having multiple micro-pixel regions, each micro-pixel region including a micro-LED. Each micro-LED includes: at least two light-emitting layers along a vertical direction and a dielectric layer formed between adjacent light-emitting layers; an IC backplane formed on the back surface of the micro-LED and configured to control the light-emitting layers; and a plurality of interconnect structures configured to electrically connect each light-emitting layer to an electrode accordingly. The interconnect structures include: one or more top interconnect structures configured to electrically connect the top of each light-emitting layer in the light-emitting layers to a first electrode; and one or more bottom interconnect structures configured to electrically connect the bottom of each light-emitting layer in the light-emitting layers to the IC backplane and to a second electrode. The interconnect structures are formed around each micro-pixel region, with one bottom interconnect structure corresponding to one micro-LED and one top interconnect structure corresponding to an adjacent micro-LED.

Description

Technical Field

[0001] This disclosure generally relates to micro-LED manufacturing technology, and more specifically to micro-LED display panels. Background Technology

[0002] Inorganic micro-pixel light-emitting diodes (also known as micro-LEDs, micro-LEDs, or μ-LEDs) are becoming increasingly important due to their applications in various fields, including self-emitting microdisplays, visible light communication, and optogenetics. Micro-LEDs exhibit higher output performance than conventional LEDs due to better strain relaxation, improved light extraction efficiency, and uniform current distribution. Compared to conventional LEDs, micro-LEDs also demonstrate several advantages, such as improved thermal efficiency, faster response rates, a wider operating temperature range, higher resolution, a wider color gamut, higher contrast, lower power consumption, and operability at higher current densities.

[0003] Typically, a microLED can include multiple light-emitting layers, and each light-emitting layer can be electrically connected to a corresponding electrode, allowing each light-emitting layer to be controlled. A microLED display panel can include an array of microLEDs. Therefore, this connection for each light-emitting layer of each microLED occupies a significant amount of space within the microLED display panel, which may limit the arrangement of more microLEDs on the panel. Summary of the Invention

[0004] Embodiments of this disclosure provide a micro-LED display panel. The micro-LED display panel includes: a micro-pixel array region comprising a plurality of micro-pixel regions, each micro-pixel region including a micro-LED; wherein the micro-LED includes at least two light-emitting layers along a vertical direction and a dielectric layer formed between adjacent light-emitting layers, wherein the at least two light-emitting layers are coaxial; an IC backplane formed on the back surface of the micro-LED and configured to control the light-emitting layers; and a plurality of interconnect structures configured to electrically connect each light-emitting layer to an electrode, wherein the interconnect structures include one or more top interconnect structures and one or more bottom interconnect structures, the one or more top interconnect structures being configured to electrically connect the top of each light-emitting layer in the light-emitting layers to a first electrode, and the one or more bottom interconnect structures being configured to electrically connect the bottom of each light-emitting layer in the light-emitting layers to the IC backplane and to a second electrode, the interconnect structures being formed around each micro-pixel region, one bottom interconnect structure corresponding to one micro-LED, and one top interconnect structure corresponding to an adjacent micro-LED.

[0005] Embodiments of this disclosure provide a micro-LED display panel. The micro-LED display panel includes: a micro-pixel array region comprising a plurality of micro-pixel regions, each micro-pixel region including a micro-LED; wherein the micro-LED includes at least two light-emitting layers disposed in a vertical direction and a dielectric layer formed between adjacent light-emitting layers in the light-emitting layers, wherein the at least two light-emitting layers are non-coaxial; an IC backplane formed on the back surface of the micro-LED and configured to control the light-emitting layers; and a plurality of interconnect structures configured to electrically connect the light-emitting layers to electrodes respectively, wherein the interconnect structures include one or more top interconnect structures and one or more bottom interconnect structures, the one or more top interconnect structures being configured to electrically connect the top of each light-emitting layer in the light-emitting layers to a first electrode, and the one or more bottom interconnect structures being configured to electrically connect the bottom of each light-emitting layer in the light-emitting layers to the IC backplane and to a second electrode, the interconnect structures being formed around each micro-pixel region, one bottom interconnect structure corresponding to one micro-LED, and one top interconnect structure corresponding to an adjacent micro-LED.

[0006] Embodiments of this disclosure provide a micro-LED display panel. The micro-LED display panel includes: a micro-pixel array region comprising a plurality of micro-pixel regions, each micro-pixel region comprising a micro-LED; wherein the micro-LED includes at least two light-emitting layers disposed in a vertical direction and a dielectric layer formed between adjacent light-emitting layers; an IC backplane formed on the back surface of the micro-LED and configured to control the light-emitting layers; and a plurality of interconnect structures configured to electrically connect the light-emitting layers to electrodes accordingly, wherein the interconnect structures include one or more top interconnect structures and one or more bottom interconnect structures, the one or more top interconnect structures being configured... The top of each light-emitting layer in the light-emitting layer is electrically connected to a first electrode. The one or more bottom interconnect structures are configured to electrically connect the bottom of each light-emitting layer in the light-emitting layer to the IC backplane and to a second electrode. The interconnect structures are formed around each micro-pixel region. One bottom interconnect structure corresponds to one micro-LED, and one top interconnect structure corresponds to an adjacent micro-LED. A plurality of top contacts are configured to connect the one or more top interconnect structures to the first electrode, wherein the top contacts are continuously connected to form a mesh structure, and wherein the micro-LEDs are exposed. Attached Figure Description

[0007] Embodiments and aspects of this disclosure are illustrated in the following detailed description and accompanying drawings. The various features shown in the drawings are not drawn to scale.

[0008] Figure 1 A top view structural diagram showing a micro-package structure of a micro LED display panel according to some embodiments of this disclosure is provided.

[0009] Figure 2 A structural diagram showing a side cross-sectional view of a micro LED display panel according to some embodiments of this disclosure is presented.

[0010] Figure 3 A structural diagram showing a cross-sectional view of an exemplary microLED with multiple light-emitting layers, illustrating some embodiments according to this disclosure, is presented.

[0011] Figure 4A A top view structural diagram is shown illustrating an exemplary micro-LED display panel according to some embodiments of this disclosure.

[0012] Figures 4B to 4D Each of the following is a top view structural diagram showing a separation zone of the metal region, illustrating some embodiments of the exemplary micro-LED display panel according to this disclosure.

[0013] Figure 5A The following are examples illustrating some embodiments according to this disclosure. Figure 4D The diagram shows a structural view of the exemplary micro LED display panel along the X-axis.

[0014] Figure 5B The following are some embodiments shown in accordance with this disclosure: Figure 4D The diagram shows a structural view of a cross-sectional view along the Y-axis of an exemplary micro LED display panel.

[0015] Figure 5C The following are examples illustrating some embodiments according to this disclosure. Figure 4D The diagram shows a structural view of a cross-sectional view along the Z-axis of an exemplary micro LED display panel.

[0016] Figure 6 A structural diagram showing a cross-sectional view along the X-axis of another exemplary micro-LED display panel, illustrating some embodiments according to this disclosure. Detailed Implementation

[0017] Reference will now be made in detail to exemplary embodiments, examples of which are shown in the accompanying drawings. The following description refers to the accompanying drawings, wherein the same numerals in different drawings denote the same or similar elements unless otherwise indicated. The implementations set forth in the following description of the exemplary embodiments do not represent all implementations consistent with the present invention. Rather, they are merely examples of devices and methods consistent with the aspects listed in the appended claims and relevant to the present invention. Specific aspects of this disclosure are described below in more detail. In the event of any conflict with terms and / or definitions incorporated by reference, the terms and definitions provided herein shall prevail.

[0018] Figure 1 A top view structural diagram showing a micro-package structure of a micro LED display panel according to some embodiments of this disclosure is provided. Figure 2 A structural diagram showing a side cross-sectional view of a micro LED display panel according to some embodiments of this disclosure is illustrated. Reference Figure 1 and Figure 2 The micro-package structure 100 includes a micro-LED display panel 130. The micro-LED display panel 130 includes a micro-LED array region 132 and an IC (integrated circuit) backplane 131. The micro-LED array region 132 is located on the IC backplane 131 to form an image display area of ​​the micro-LED display panel 130. The remaining area on the IC backplane 131 not covered by the micro-LED array region 132 is formed as a non-functional area. The IC backplane 131 is formed on the back surface of the micro-LED array region 132, with an extruded portion extending outside the micro-LED array region 132 (i.e., not covered by it). The micro-LED array region 132 further includes a plurality of micro-LEDs 133 arranged in an array. A plurality of signal metal pads and dummy metals may be further formed on the surface of the non-functional area. The signal metal pads may include a plurality of IO (input / output) metal pads 191 and a plurality of dummy metal pads 192.

[0019] The IO metal pads 191 are electrically connected to the IC backplane 131. MicroLEDs 133 in the microLED array region 132 are correspondingly connected to the IC backplane 131 through a plurality of first metal connection holes 193. That is, each microLED 133 is connected to the IC backplane 131 through one first metal connection hole 193. The corresponding top of the first metal connection hole 193 is connected one-to-one with the microLED 133. Therefore, the plurality of first metal connection holes 193 correspond to the plurality of microLEDs 133. Figure 1As shown, the first metal connection hole 193 is formed in the same array as the array of micro-LEDs 133, and the first metal connection hole 193 forms a first connection area on the IC backplane 131, which corresponds to the micro-LED array area 132 (e.g., an image display area). The bottoms of the signal metal pads (i.e., IO metal pads 191 and dummy metal pads 192) are connected to the IC backplane 131 through a plurality of second metal connection holes 194. The bottoms of the second metal connection holes 194 of the IO metal pads 191 are conductively connected to the bottoms of the first metal connection holes 193, for example, through wires (not shown) integrated in the IC backplane 131. Therefore, the IO metal pads 191 can be conductively connected to the micro-LEDs 133 through the second metal connection holes 194, the IC backplane 131, and the first metal connection holes 193. The bottoms of the second metal connection holes 194 of the dummy metal pads 192 are conductively connected to the electrodes of the micro-LEDs 133. The second metal connection hole 194 is formed as a second connection region on a non-functional area. The second connection region is positioned away from the first connection region and close to the edge of the IC backplane 131. In some embodiments, the first connection region refers to an internal connection region, and the second connection region refers to an external connection region. The first metal connection hole 193 and the second metal connection hole 194 are formed in the top layer 134 of the IC backplane 131.

[0020] Figure 3 A structural diagram showing a cross-sectional view of an exemplary microLED 300 having multiple light-emitting layers, illustrating some embodiments according to this disclosure, is provided. It can be understood that... Figure 3 The components shown are for illustrative purposes only and do not constitute a limitation on any particular arrangement. Figure 3 As shown, in this example, the micro-LED 300 includes three light-emitting layers: a first light-emitting layer 311 (i.e., the topmost light-emitting layer), a second light-emitting layer 312, and a third light-emitting layer 313 (i.e., the bottommost light-emitting layer). For example, in some embodiments, the first light-emitting layer 311 is a red light-emitting layer, the second light-emitting layer 312 is a blue light-emitting layer, and the third light-emitting layer 313 is a green light-emitting layer. In some embodiments, the light-emitting layers may include light of the same color. For example, the first light-emitting layer 311 is a green light-emitting layer, and both the second light-emitting layer 312 and the third light-emitting layer 313 are red light-emitting layers. The three light-emitting layers (i.e., layers 311 to 313) are arranged vertically from top to bottom in a relative sense. That is, the second light-emitting layer 312 is disposed above the third light-emitting layer 313, and the first light-emitting layer 311 is disposed above the second light-emitting layer 312. In some embodiments, the vertical distance between two adjacent light-emitting layers is the same. In some implementations, the distance between two adjacent light-emitting layers can be varied depending on the practical design.

[0021] In some implementations, the light-emitting layers are arranged coaxially. That is, the vertical projections of the corresponding light-emitting layers overlap. In some implementations, the sizes (e.g., regions) of the light-emitting layers can be different. In this case, the vertical projections of the corresponding light-emitting layers can partially overlap.

[0022] In some embodiments, the light-emitting layers are arranged non-coaxially. Therefore, the vertical projections of the corresponding light-emitting layers can partially overlap. In some embodiments, the light-emitting layers are staggered. In some embodiments, the vertical projections of the corresponding light-emitting layers are dispersed, with no partial overlap.

[0023] In some embodiments, the microLED 300 further includes a conductive layer network structure 320. The conductive layer network structure 320 is configured to connect each light-emitting layer to an electrode accordingly, thereby creating a potential difference for the light-emitting layers. In some embodiments, the conductive layer network structure 320 includes multiple conductive layers, for example, conductive layers 321 to 324. Conductive layers 321 and 323 are respectively formed on the back surface of each of the first light-emitting layer 311 and the second light-emitting layer 312, and conductive layers 321 and 323 may also be referred to as the bottom conductive layers of the first light-emitting layer 311 and the second light-emitting layer 312. Conductive layers 322 and 324 are respectively formed on the top surface of each of the second light-emitting layer 312 and the third light-emitting layer 313, and conductive layers 322 and 324 may also be referred to as the top conductive layers of the second light-emitting layer 312 and the third light-emitting layer 313. Each conductive layer is configured to connect a corresponding light-emitting layer to an electrode. By utilizing the conductive layer network structure 320, the arrangement of connecting the light emitting layer to the electrodes can be more flexible, which can provide more wiring possibilities.

[0024] In some implementations, the conductive layer is transparent. The material of each conductive layer is one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), or aluminum-doped zinc oxide (AZO).

[0025] In some embodiments, a bottom conductive layer is formed on the back surface of each of the third light-emitting layers 313, and the bottom conductive layer is opaque, thereby improving luminous efficiency.

[0026] In some embodiments, the microLED 300 further includes an interconnect structure configured to connect the conductive layer network structure 320 to an electrode. In some embodiments, an electrode is located on top of the microLED 300, and another electrode is integrated into an IC backplane 330. The IC backplane 330 is formed on the back surface of the microLED 300. The interconnect structure includes one or more top interconnect structures 341 and one or more bottom interconnect structures 342. The top interconnect structure 341 includes top interconnect structures 341a and 341b. The bottom interconnect structure 342 includes bottom interconnect structures 342a and 342b. The top interconnect structure 341 is used, for example, to connect the top of a corresponding light-emitting layer to an electrode (not shown) of the microLED 300 via the conductive layer network structure 320. The bottom interconnect structure 342 is used, for example, to connect the bottom of each light-emitting layer to the IC backplane 330 for connection to another electrode via the conductive layer network structure 320. In some embodiments, each conductive layer (321, 322, 323, or 324) may be connected to a corresponding interconnect structure. In some embodiments, the top interconnect structure can be used to connect the tops of the light-emitting layers other than the top of the topmost light-emitting layer (i.e., 311). That is, the top of the topmost light-emitting layer 311 can be directly connected to the electrodes (not shown) of the micro-LED 300, and the tops of the other light-emitting layers (i.e., 312, 313) are connected to the same top interconnect structure 341 via a conductive layer network structure 320. In some embodiments, the electrodes connected to the tops of the light-emitting layers are disposed on the IC backplane. For example, the micro-LED 300 further includes external wires configured to connect the top interconnect structure to electrodes on the IC backplane. In another example, the top interconnect structure can extend downwards to the IC backplane to connect to extrusions on the IC backplane.

[0027] In some embodiments, each light-emitting layer 311-313 corresponds to a bottom interconnect structure 342, and all bottom interconnect structures 342 are separated and isolated from each other. The bottom of the respective light-emitting layer 311-313 is connected to the corresponding bottom interconnect structure 342 via a conductive layer network structure 320. In some embodiments, the bottom of the bottommost light-emitting layer can be directly connected to the IC backplane 330 via the bottom interconnect structure 342 without the conductive layer network structure 320. In some embodiments, the interconnect structures (e.g., top interconnect structure 341 and bottom interconnect structure 342) are made of conductive metal.

[0028] In some implementations, the interconnect structure is further configured to reflect light emitted from the light-emitting layer and prevent crosstalk between adjacent microLEDs, thereby improving luminous efficiency. Further details will be described below.

[0029] Still refer to Figure 3 In this example, the bottom of the first light-emitting layer 311 is connected to the IC backplane 330 via a conductive layer 321 and a bottom interconnect structure 342a. The top of the second light-emitting layer 312 is connected to the electrodes of the micro-LED 300 via a conductive layer 322 of the conductive layer network structure 320 and a top interconnect structure 341a. The bottom of the second light-emitting layer 312 is connected to the IC backplane 330 via a conductive layer 323 and a bottom interconnect structure 342b. The top of the third light-emitting layer 313 is connected to the electrodes of the micro-LED 300 via a conductive layer 324 of the conductive layer network structure 320 and a top interconnect structure 341b. The bottom of the third light-emitting layer 313 is connected to the IC backplane 330 via a conductive layer and a bottom interconnect structure. Figure 3 As shown, the bottom of the third light-emitting layer 313 can be connected to the IC backplane without requiring a bottom conductive layer. The bottom of the third light-emitting layer 313 (i.e., the bottommost light-emitting layer) is connected to the IC backplane 330 via a bottom conductive connection structure 380. Therefore, one bottom interconnect structure can be omitted. The number of bottom interconnect structures in a micro-LED is one less than the number of light-emitting layers. For example, when there are three light-emitting layers in a micro-LED, the number of bottom interconnect structures is two. If there are five light-emitting layers in a micro-LED, the number of bottom interconnect structures is four. In some embodiments, a bottom conductive layer 325 can be formed on the back surface of the third light-emitting layer 313, and the bottom conductive connection structure 380 is connected to the bottom conductive layer 325. In some embodiments, no conductive layer is formed on the back surface of the third light-emitting layer 313. That is, the bottom conductive connection structure 380 can be connected to the third light-emitting layer 313 without requiring a bottom conductive layer 325.

[0030] Each light-emitting layer is correspondingly connected to an electrode, thereby allowing independent control of each light-emitting layer. In some embodiments, each light-emitting layer is a stacked PN junction layer. In some embodiments, the stacked PN junction layer comprises, from top to bottom, a P-type semiconductor layer, a quantum well layer, and an N-type semiconductor layer.

[0031] In some embodiments, the microLED 300 further includes a dielectric layer 350 formed between adjacent light-emitting layers. For example, a first dielectric layer is formed between a first light-emitting layer 311 and a second light-emitting layer 312, a second dielectric layer is formed between the second light-emitting layer 312 and a third light-emitting layer 313, and a third dielectric layer may be further formed between the third light-emitting layer 313 and the IC backplane 330. In some embodiments, the dielectric layer 350 is formed around an interconnect structure. In some embodiments, the dielectric layer 350 fills a space within the microLED 300. In some embodiments, the dielectric layer 350 is transparent. In some embodiments, the material of the dielectric layer 350 includes one or more of SiO2, SiON, Al2O3, or SiN.

[0032] In some embodiments, the third light-emitting layer 313 (i.e., the bottommost light-emitting layer) further includes a reflective layer 3131 formed on the bottom surface of the third light-emitting layer 313. The reflective layer 3131 is opaque and can reflect light emitted upwards to the bottom of the bottommost light-emitting layer 313 to improve luminous efficiency. In some embodiments, the reflective layer 3131 is an Ag mirror.

[0033] In some embodiments, the third light-emitting layer 313 (i.e., the bottommost light-emitting layer) further includes an isolation layer 3132 formed between the bottom surface of the third light-emitting layer 313 and the reflective layer 3131 to isolate the third light-emitting layer 3133 from the reflective layer 3131. In some embodiments, the material of the isolation layer 3132 includes one or more of SiO2, SiON, Al2O3, or SiN.

[0034] Figure 4A A top view structural diagram is shown illustrating an exemplary micro-LED display panel 400 according to some embodiments of this disclosure. (See also:) Figure 4A As shown, the micro-LED display panel 400 includes a micro-pixel array area. In this example, the micro-pixel array area is a 3×3 array. The micro-pixel array area includes a plurality of micro-LED pixel areas 410. Each micro-pixel area 410 in the micro-pixel array area includes a micro-LED 300. See also... Figure 3Each microLED 300 may be defined with a mesa boundary 360 and a metal boundary 370. The mesa boundary 360 defines a mesa structure region of the microLED 300. The mesa structure has a diameter d and is formed by a light-emitting layer (e.g., 311, 312, or 313). For example, the diameter of the mesa boundary 360 is d. In some embodiments, the mesa structure has a convex structure. In some embodiments, the mesa structure includes a flat top surface. In some embodiments, the top surface of the mesa structure is aligned with the surface of the microLED 300, that is, the mesa structure does not protrude from the surface of the microLED 300. The metal boundary 370 separates the microLED 300 from the metal region. The region defined within the metal boundary 370 forms a microLED pixel region 410 for emitting light. In some embodiments, a small amount of light may be emitted from the region outside the metal boundary 370. For example, the diameter of the metal boundary 370 is D. The region between adjacent microLEDs 300 may be referred to as the metal region 420. Metal can be partially or completely filled in the metal region 420 and used as an emission blocker to prevent optical crosstalk between adjacent microLEDs 300.

[0035] In some implementation schemes, refer to Figure 3 The microLED 300 further includes a microlens 390 above the first light-emitting layer 311. The microlens 390 covers the mesa structure region of the microLED 300 (i.e., the mesa structure region), meaning that the diameter of the microlens 390 is equal to or greater than the diameter d. In some embodiments, the diameter of the microlens 390 is less than or equal to the diameter D. The material of the microlens 390 is selected from silicon oxide, photoresist, etc.

[0036] Figures 4B to 4D These are structural diagrams showing top views of exemplary micro-LED display panels according to some embodiments of this disclosure, illustrating the separation area of ​​the metal region 420. Reference Figure 3 and Figures 4B to 4D In some implementations, the metal region 410 can be divided into multiple regions for providing different functions. For example, the metal region 410 can be divided into a first region for connecting the bottom of each light-emitting layer to the IC backplane 330 and a second region for connecting the top of each light-emitting layer to the electrodes of the microLED. In this example, for a microLED with three light-emitting layers, the first region for connecting the bottom of each light-emitting layer to the IC backplane 330 is divided into two sub-regions A1 and A2. Figure 4B and Figure 4C Subsections A1 and A2 are correspondingly shown according to some embodiments of this disclosure. For example... Figure 4B As shown, sub-region A1 is along... Figure 4BThe area shown connects adjacent micro-LEDs vertically. A bottom interconnect structure 342a for connecting to the bottom of the first light-emitting layer 321 can be provided in sub-region A1. (As shown...) Figure 4C As shown, sub-region A2 is along... Figure 4C The area shown is a horizontally connected region of adjacent microLEDs. A bottom interconnect structure 342b for connecting to the bottom of the second light-emitting layer 312 can be disposed in sub-region A2. In some embodiments, a bottom interconnect structure for connecting to the bottom of the third light-emitting layer 313 can be disposed below the bottom of the microLED, for example, within the mesa boundary 360. In some embodiments, the third light-emitting layer 313 can be connected to the IC backplane without a bottom conductive layer. The bottom of the third light-emitting layer 313 (i.e., the bottommost light-emitting layer) is connected to the IC backplane via a bottom conductive connection structure formed between the bottom of the bottommost light-emitting layer and the IC backplane. Therefore, the third light-emitting layer 313 does not require a bottom interconnect structure. Therefore, the number of bottom interconnect substructures of the microLED can be reduced by one. For example, when there are three light-emitting layers in the microLED, the number of bottom interconnect structures of the microLED is 2. If there are five light-emitting layers in the microLED, the number of bottom interconnect structures of the microLED is 4.

[0037] Sub-regions A1 and A2 are separate. More specifically, bottom interconnect structures 342a and 342b are arranged separately. Figure 4D Subregions A1, A2 and a second region B are shown according to some embodiments of this disclosure for connecting the top of the respective light-emitting layer to electrodes of a micro-LED. For example... Figure 4D As shown, region B can be formed in the remaining area between sub-regions A1 and A2. In this example, sub-regions A1 and A2 are orthogonal, so region B is rectangular. A top interconnect structure 341 for connecting the tops of the respective light-emitting layers (e.g., 311 to 313) can be provided in region B.

[0038] like Figure 4D As shown, regions A1, A2, and B are symmetrically divided, with sub-regions A1 and A2 being separate. It can be understood that in some embodiments, sub-regions A1 and A2 are not orthogonal. An isolation region exists between adjacent regions, configured to separate adjacent regions, and no filling metal is present in the isolation region. For example, see reference... Figure 4D Region C is formed between sub-region A1 and region B, and between sub-region A2 and region B.

[0039] In some implementations, the bottom interconnect structure 342 is symmetrically arranged around each micropixel region, for example, in sub-regions A1 and A2, such as... Figure 4DAs shown. In some embodiments, the top interconnect structure 341 is symmetrically arranged around each micropixel region, for example, at the center of region B, as shown. Figure 4D As shown. In some embodiments, the center of symmetry of the bottom interconnect structure 342 and the top interconnect structure 341 is the center of each microLED.

[0040] In some implementations, more than three light-emitting layers exist in the micro-LED. A first region for connecting the bottom of the respective light-emitting layers to the IC backplane can be further divided into multiple sub-regions. For example, for a micro-LED with four light-emitting layers, the three sub-regions of the first region can be separated by an angle of 120° between two sub-regions. Three bottom interconnect structures corresponding to the three light-emitting layers can be correspondingly disposed within the three sub-regions. The bottom interconnect structure for the bottommost light-emitting layer can be disposed in the mesa structure region, for example, within the mesa boundary. A second region for connecting the top of the respective light-emitting layers to the electrodes of the micro-LED can be formed in the remaining area between the sub-regions of the first region. With this design, the metal region 410 is also symmetrically divided.

[0041] Return to reference Figures 4A to 4C and with Figure 3 Consistently, conductive layer 321 can extend to region A1 to connect with bottom interconnect structure 342a; conductive layer 323 can extend to region A2 to connect with bottom interconnect structure 342b; and conductive layers 322 and 324 can extend to region B to connect with top interconnect structure 341. (Refer to...) Figures 5A to 5C Further structural details are provided. In some embodiments, the sum of the contours of the conductive layers connected to the micro-LEDs is not less than the perimeter of the micro-pixel region. That is, refer to... Figure 4D The sum of the contours of regions A1 and A2 connected to a micro-LED is not less than half (e.g., 50%) of the perimeter of the micro-pixel region (e.g., having a diameter D).

[0042] Figure 5A The following are examples illustrating some embodiments according to this disclosure. Figure 4D The diagram shows a structural view of the exemplary micro LED display panel 400 along the X-axis. Figure 5B The following are examples illustrating some embodiments according to this disclosure. Figure 4D This is a structural diagram of a cross-sectional view along the Y-axis of an exemplary micro-LED display panel 400. (See diagram for reference.) Figure 5AAs shown, the bottom conductive layer 323 of the second light-emitting layer 312 extends to connect to the bottom interconnect structure 342b. The bottom interconnect structure 342b is connected to the IC backplane 330 and formed below sub-region A2. The bottom conductive layer 321 of the first light-emitting layer 311 is not connected to the bottom interconnect structure 342b. In some embodiments, the width of the bottom interconnect structure 342b is the same as the length of the sub-region A2 (i.e., the distance between adjacent micro-LEDs along the X-axis). In some embodiments, the width of the bottom interconnect structure 342b is less than the length of the sub-region A2. In some embodiments, the bottom conductive layer 323 may extend through the bottom interconnect structure 342b, that is, the bottom conductive layer 323 may extend to the farthest edge of the interconnect structure 342b. In some embodiments, the bottom conductive layer 323 may extend into the bottom interconnect structure 342b and terminate at any location within the bottom interconnect structure 342b. For two adjacent microLEDs, the bottom conductive layer 323 of the second light-emitting layer 312 of each microLED can extend to and connect to a bottom interconnect structure 342b, and a bottom interconnect structure 342b can only be connected to one bottom conductive layer 323. For example, in this example, the bottom conductive layer 323 of the second light-emitting layer 312 of each microLED extends to the right (e.g., Figure 5A (As seen) extends to connect with the bottom interconnect structure 342b located on the right side of the micro LED, and not with the left side ( Figure 5A The bottom interconnect structure 342b (which is configured to connect to the bottom conductive layer of the second light emitting layer 312 of the adjacent microLED) is connected in the opposite direction shown. Therefore, one bottom interconnect structure 342b can connect the second light emitting layer 312 of only one microLED to the IC backplane 330. Thus, the second light emitting layer 312 of each microLED can be controlled independently.

[0043] refer to Figure 5B Similar to Figure 5AThe bottom conductive layer 321 of the first light-emitting layer 311 extends to connect to the bottom interconnect structure 342a. The bottom interconnect structure 342a is connected to the IC backplane 330 and formed below region A1. The bottom conductive layer 323 of the second light-emitting layer 312 is not connected to the bottom interconnect structure 342a. In some embodiments, the width of the bottom interconnect structure 342a is the same as the length of sub-region A1 (i.e., the distance between adjacent micro-LEDs along the Y-axis). In some embodiments, the width of the bottom interconnect structure 342a is less than the length of sub-region A1. In some embodiments, the bottom conductive layer 321 may extend through the bottom interconnect structure 342a, that is, the bottom conductive layer 321 may extend to the farthest edge of the interconnect structure 342a. In some embodiments, the bottom conductive layer 321 may extend into the bottom interconnect structure 342a and terminate at any location within the bottom interconnect structure 342a. For two adjacent microLEDs, the bottom conductive layer 321 of the first light-emitting layer 311 of each microLED can extend to and connect to a bottom interconnect structure 342a, and a bottom interconnect structure 342a can only be connected to one bottom conductive layer 321. For example, in this example, the bottom conductive layer 321 of the first light-emitting layer 311 of each microLED extends to the right (e.g., ...). Figure 5B (As seen) extends to connect with the bottom interconnect structure 342a located on the right side, and not with the left side ( Figure 5B The bottom interconnect structure 342a (which is configured to connect to the bottom conductive layer of the first light emitting layer 311 of the adjacent microLED) is connected in the opposite direction shown. Therefore, one bottom interconnect structure 342a can connect the first light emitting layer 311 of only one microLED to the IC backplane 330. Thus, the first light emitting layer 311 of each microLED can be controlled independently.

[0044] like Figure 5A and Figure 5B As shown in both embodiments, the bottom of the third light-emitting layer 313 can be connected to the IC backplane without requiring a bottom conductive layer. The bottom of the third light-emitting layer 313 (i.e., the bottommost light-emitting layer) is connected to the IC backplane 330 via a bottom conductive connection structure 380. The third light-emitting layer 313 is connected to the IC backplane 330 via a corresponding bottom interconnect structure for each microLED. Therefore, each light-emitting layer of each microLED can be individually connected to the IC backplane 330 and thus can be independently controlled. In some embodiments, the top of the bottom interconnect structure 342 is lower than the top of the first light-emitting layer 311 (i.e., the topmost light-emitting layer). Therefore, the bottom interconnect structure 342 does not penetrate the microLED.

[0045] like Figure 5A and Figure 5BAs shown, a bottom interconnect structure 342 is used for only one light-emitting layer of a microLED. Adjacent microLEDs do not share bottom interconnect structures. A microLED may have multiple bottom interconnect structures disposed around the micro-pixel regions used for multiple light-emitting layers. In some embodiments, the multiple bottom interconnect structures are arranged symmetrically around the micro-pixel regions.

[0046] Figure 5C The following are examples illustrating some embodiments according to this disclosure. Figure 4D This is a structural diagram of a cross-sectional view along the Z-axis of an exemplary micro-LED display panel 400. (See diagram for reference.) Figure 5C As shown, both top conductive layers 322 and 324 extend and connect to the top interconnect structure 341. The top interconnect structure 341 is configured to connect to the electrodes of the microLEDs. In some embodiments, both top conductive layers 322 and 324 are formed continuously, that is, each top conductive layer (e.g., 322, 324) extends continuously along the Z-axis. The top conductive layers of adjacent microLEDs can be connected to the same top interconnect structure. For example, four adjacent microLEDs can use the same top interconnect structure, which is located at the center of region B. For all microLEDs, the top interconnect structure can be connected to continuous top conductive layers 322 and 324. (See reference...) Figure 5A and Figure 5B As described, the bottom of each light emitting layer (e.g., 311 to 313) is independently connected to the IC backplane 330 via a corresponding bottom interconnect structure (e.g., 342a, 342b), and the top of each light emitting layer can be connected to the electrodes of the micro LED via a common top interconnect structure 341. This makes the design less complex and thus reduces costs.

[0047] In some embodiments, the top interconnect structure 341 extends through the top and bottom of the microLED. The top of the top interconnect structure 341 is higher than the top of the microLED. The bottom of the top interconnect structure 341 is formed on the IC backplane 330. In some embodiments, the top interconnect structure 341 does not extend through the microLED as long as it can connect to the top conductive layer of the third light-emitting layer.

[0048] In some embodiments, the light-emitting layers (i.e., 311-313) are formed of stacked pn junction layers. The stacked pn junction layers, from top to bottom, include a P-type semiconductor layer, a quantum well layer, and an N-type semiconductor layer. In some embodiments, any one of the light-emitting layers (e.g., the P-type semiconductor layer, the quantum well layer, and the N-type semiconductor layer) is formed continuously between adjacent micropixel regions and continuously over the entire micropixel array region. In some embodiments, a top contact 344 is formed directly on the quantum well layer between adjacent microLEDs, and the top contact 344 is configured to connect electrodes. The top of the top interconnect structure 341 is connected to the bottom of the top contact 344. Therefore, two adjacent microLEDs can share a top contact 344 and a top interconnect structure 341. In some embodiments, the P-type semiconductor layer and / or the N-type semiconductor layer comprises a III-V compound semiconductor.

[0049] In some embodiments, an opening is formed in the quantum well of the first light-emitting layer 311 between adjacent microLEDs. A top conductive connection structure 343 is formed through the opening and connected to the top interconnect structure 341 and the top contact 344. The width of the top conductive connection structure 343 is smaller than the width of the top interconnect structure 341. The width of the top contact 344 is larger than the width of the top conductive connection structure 343. In some embodiments, the width of the top contact 344 is further larger than the width of the top interconnect structure 341 to improve the conductivity of the top interconnect structure 341. In some embodiments, the width of the top contact 344 is larger than the width of the bottom interconnect structure 342. Therefore, the size of the microLED can be reduced and the integration density can be improved.

[0050] In some implementations, multiple top contacts are sequentially connected to form a mesh structure. The mesh structure includes multiple openings, and each microLED is exposed from an opening. The size (e.g., area) of the openings is flexible as long as the mesa structure area of ​​the microLED is exposed.

[0051] The micro-LED display panel provided by the embodiments of this disclosure has an interconnect structure for connecting each light-emitting layer of each micro-LED to connect electrodes, and the interconnect structure is symmetrically arranged on the micro-LED display panel, which can facilitate the manufacturing of the micro-LED display panel. A conductive layer network structure corresponds to the interconnect structure, which can further reduce the use of metal in a symmetrical arrangement.

[0052] Figure 6 A structural diagram is shown, illustrating a cross-sectional view along the X-axis of another exemplary micro-LED display panel, showing some embodiments according to this disclosure. Figure 5A compared to, Figure 6 The width of the bottom interconnect structure 342b shown is less than Figure 5A The width of the bottom interconnect structure 342b shown is thus limited. Therefore, the micro-LEDs can be arranged more compactly, allowing for a greater number of micro-LEDs to be placed in a given micro-LED display panel.

[0053] The micro-LEDs described herein have a very small volume. Micro-LEDs can be organic or inorganic LEDs. Micro-LEDs can be applied in micro-LED array panels. The light-emitting area of ​​a micro-LED array panel is very small, such as 1mm × 1mm, 3mm × 5mm, etc. In some embodiments, the light-emitting area is the area of ​​the micro-LED array within the micro-LED array panel. The micro-LED array panel includes one or more micro-LED arrays forming a pixel array, such as a 1600 × 1200, 680 × 480, or 1920 × 1080 pixel array, where the micro-LEDs are pixels. The diameter of the micro-LEDs ranges from approximately 200nm to 2μm. An IC backplane is formed on the back surface of the micro-LED array and is electrically connected to the micro-LED array. The IC backplane acquires signals such as image data from the outside via signal lines to control the corresponding micro-LEDs to emit light or not emit light.

[0054] Those skilled in the art will understand that the micro LED display model or micro LED display panel is not limited to the structure described above, and may include more or fewer components than those shown in the figures, or may combine some components, or may use different components.

[0055] It should be noted that relational terms in this document, such as “first” and “second”, are used only to distinguish an entity or operation from another entity or operation, without requiring or implying any actual relationship or order between these entities or operations. Furthermore, the words “including,” “having,” “containing,” and “comprising,” as well as other similar forms, are intended to be equivalent in meaning and are open-ended, because one or more items following any of these words do not imply an exhaustive list of this or these items, or that it means limitation to only the listed items.

[0056] As used herein, unless expressly stated otherwise, the term "or" covers all possible combinations unless impractical. For example, if a database is stated to include A or B, then unless expressly stated otherwise or impractical, the database may include A, or B, or A and B. As a second example, if a database is stated to include A, B, or C, then unless expressly stated otherwise or impractical, the database may include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C.

[0057] In the foregoing description, numerous specific details have been described, which may vary depending on the implementation. Certain modifications and alterations may be made to the described embodiments. Other embodiments will be apparent to those skilled in the art in light of the specification and practice of the invention disclosed herein. The specification and examples are intended to be considered merely exemplary, and the true scope and spirit of the invention are indicated by the appended claims. The sequence of steps shown in the accompanying drawings is also intended for illustrative purposes only and is not intended to limit one to any particular order of steps. Therefore, those skilled in the art will understand that these steps may be performed in different orders while implementing the same method.

[0058] Exemplary embodiments have been disclosed in the accompanying drawings and description. However, many variations and modifications can be made to these embodiments. Therefore, although specific terminology has been used, it is used in a general and descriptive sense only and not for limiting purposes.

Claims

1. A micro LED display panel, comprising: a micro pixel array region comprising a plurality of micro pixel regions, each micro pixel region comprising a micro LED; wherein the micro LED comprises at least two light emitting layers arranged along a vertical direction and a dielectric layer formed between adjacent light emitting layers in the light emitting layers, wherein the at least two light emitting layers are coaxial; an IC backplane formed at a back surface of the micro LED and configured to control the light emitting layers; and a plurality of interconnection structures configured to electrically connect the light emitting layers to electrodes respectively, wherein the interconnection structures comprise one or more top interconnection structures configured to electrically connect a top of each of the light emitting layers to a first electrode and one or more bottom interconnection structures configured to electrically connect a bottom of each of the light emitting layers to the IC backplane to a second electrode, the interconnection structures are formed around each micro pixel region, one bottom interconnection structure corresponds to one micro LED, and one top interconnection structure corresponds to adjacent micro LEDs, top conductive layers of adjacent micro LEDs are connected to the same top interconnection structure, and the top interconnection structures are symmetrically arranged in the micro LED display panel. 2.The micro-LED display panel of claim 1, wherein, The plurality of interconnection structures are symmetrically arranged around each micro LED in the micro LED display panel. 3.The micro-LED display panel of claim 1, wherein, The interconnection structures are not directly connected to any of the light emitting layers. 4.The micro-LED display panel of claim 3, wherein, The micro LED comprises three or more light emitting layers along the vertical direction, and the interconnection structures comprise two or more bottom interconnection structures that are respectively electrically connected to the bottom of each light emitting layer of the micro LED except the bottommost light emitting layer. 5.The micro-LED display panel of claim 4, wherein, The bottom of the bottommost light emitting layer is connected to the IC backplane through a bottom conductive connection structure formed between the bottom of the bottommost light emitting layer and the IC backplane. 6.The micro-LED display panel of claim 4, wherein, The number of the bottom interconnection structures for the micro LED is equal to the number of light emitting layers of the micro LED minus one.

7. The micro-LED display panel of claim 3, wherein, The light emitting layers comprise a first light emitting layer, a second light emitting layer, and a third light emitting layer arranged along a vertical direction, the bottom interconnection structures comprise a first bottom interconnection structure and a second bottom interconnection structure, the first bottom interconnection structure is used to connect the bottom of the first light emitting layer of each of the micro LEDs, the second bottom interconnection structure is used to connect the bottom of the second light emitting layer of each of the micro LEDs; and the first bottom interconnection structure and the second bottom interconnection structure are symmetrically arranged around each micro pixel region in the micro LED display panel.

8. The micro-LED display panel of claim 7, wherein, A center of symmetry is a center of the micro LED.

9. The micro-LED display panel of any of claims 1-8, further comprising a conductive layer network structure configured to connect the light emission layers to the interconnect structure.

10. The micro-LED display panel of claim 9, wherein, The conductive layer network structure comprises one or more top conductive layers formed on a top surface of each of the light emission layers to connect the light emission layers with the top interconnect structure and one or more bottom conductive layers formed at a bottom surface of each of the light emission layers to connect the light emission layers with the bottom interconnect structure.

11. The micro-LED display panel of claim 10, wherein, Each of the top conductive layers is continuous between adjacent micro-LEDs; and each of the bottom conductive layers is discontinuous between adjacent micro-LEDs, and the bottom interconnect structure is individually connected with a corresponding bottom conductive layer of each of the micro-LEDs.

12. The micro-LED display panel of claim 9, wherein, The conductive layer network structure is transparent.

13. The micro-LED display panel of claim 12, wherein, A material of the conductive layer network structure is one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), or aluminum-doped zinc oxide (AZO).

14. The micro-LED display panel of claim 11, wherein, The bottom conductive layer of the bottom-most light emission layer is opaque.

15. The micro-LED display panel of claim 9, wherein, A sum of profiles of the conductive layers connected to the micro-LEDs is not less than half of a perimeter of the micro-pixel region.

16. The micro-LED display panel of any of claims 1-8, further comprising a dielectric layer formed between the light emission layers and around the interconnect structure.

17. The micro-LED display panel of claim 16, wherein, The dielectric layer is transparent.

18. The micro-LED display panel of any of claims 1-8, wherein, The bottom interconnect structure is formed on a top surface of the IC backplane and is electrically connected with the IC backplane.

19. The micro-LED display panel of claim 18, wherein, A top of the bottom interconnect structure is lower than a top of the top-most light emission layer.

20. The micro-LED display panel of any of claims 1-8, wherein, The top interconnect structure passes through the top and bottom of the micro-LED, and a top of the top interconnect structure is higher than the top of the micro-LED.

21. The micro-LED display panel of claim 20, wherein, The light emission layers are formed from stacked P-N junction layers comprising a P-type semiconductor layer, a quantum well layer, and an N-type semiconductor layer.

22. The micro-LED display panel of claim 21, wherein, The P-type semiconductor layer and / or the N-type semiconductor layer comprises a III-V compound semiconductor.

23. The micro-LED display panel of claim 21, wherein, The quantum well layer of the top-most light emission layer is continuous between adjacent micro-LEDs and is continuous over the micro-pixel array region.

24. The micro-LED display panel of claim 23, wherein, A top contact is disposed on the quantum well layer between adjacent micro-LEDs.

25. The micro-LED display panel of claim 24, wherein, An opening is formed in the quantum well layer between adjacent micro-LEDs; and a top conductive connection structure is disposed through the opening to connect the top interconnect structure with the top contact.

26. The micro-LED display panel of claim 25, wherein, A plurality of the top contacts are continuously connected to form a mesh structure, with the micro-LEDs exposed.

27. The micro-LED display panel of claim 25, wherein, A width of the top conductive connection structure is less than a width of the top interconnect structure; and a width of the top contact is greater than the width of the top conductive connection structure.

28. The micro-LED display panel of claim 27, wherein, The width of the top contact is greater than the width of the top interconnect structure.

29. The micro-LED display panel of claim 28, wherein, The width of the top contact is greater than the width of the bottom interconnect structure.

30. The micro-LED display panel of any of claims 1-8, wherein, The interconnect structures are made of an electrically conductive metal.

31. The micro-LED display panel of any of claims 1-8, wherein, The light emission layers emit at least two different colors of light.

32. The micro-LED display panel of claim 31, wherein, The light emission layers include a red light emission layer, a blue light emission layer, and a green light emission layer.

33. The micro-LED display panel of claim 31, wherein, The light emission layers include a green light emission layer and two red light emission layers.

34. The micro-LED display panel of any of claims 1-8, wherein, The light emission layers emit the same color of light.

35. The micro-LED display panel of any of claims 1-8, wherein, The micro-LED further includes a mesa structure formed by the light emission layers.

36. The micro-LED display panel of claim 35, wherein, The mesa structure includes a flat top surface.

37. The micro-LED display panel of claim 36, wherein, The mesa structure includes a convex structure.

38. The micro-LED display panel of claim 36, wherein, The surface of the mesa structure is aligned with the surface of the micro-LED.

39. The micro-LED display panel of claim 35, wherein, The micro-LED further includes a microlens disposed over the light emission layers covering the area of the mesa structure.

40. The micro-LED display panel of any of claims 1-8, further comprising a reflective layer formed on a bottom surface of a bottommost light emission layer of the at least two light emission layers.

41. The micro-LED display panel of any of claims 1-8, wherein, The plurality of interconnect structures are configured to reflect light emitted from the at least two light emission layers.

42. The micro-LED display panel of any of claims 1-8, further comprising external wires for connecting the top interconnection structure to the first electrodes, wherein, The first electrode is disposed on the IC backplane.

43. A micro-LED display panel, comprising: a micro-pixel array region comprising a plurality of micro-pixel regions, each micro-pixel region comprising a micro-LED; wherein the micro-LED comprises at least two light emission layers disposed along a vertical direction and a dielectric layer formed between adjacent light emission layers of the light emission layers, wherein the at least two light emission layers are non-coaxial; an IC backplane formed at a back surface of the micro-LED and configured to control the light emission layers; and a plurality of interconnect structures configured to electrically connect the light emission layers to electrodes respectively, wherein the interconnect structures comprise one or more top interconnect structures configured to electrically connect a top of each of the light emission layers to a first electrode and one or more bottom interconnect structures configured to electrically connect a bottom of each of the light emission layers to the IC backplane to a second electrode, the interconnect structures are formed around each micro-pixel region, one bottom interconnect structure corresponds to one micro-LED, and one top interconnect structure corresponds to adjacent micro-LEDs, top conductive layers of adjacent micro-LEDs are connected to the same top interconnect structure, and the top interconnect structures are symmetrically arranged in the micro-LED display panel.

44. The micro-LED display panel of claim 43, wherein, The at least two light emission layers are staggered.

45. The micro-LED display panel of claim 43, wherein, The plurality of interconnect structures are symmetrically arranged around each micro-LED in the micro-LED display panel.

46. The micro-LED display panel of any of claims 43-45, wherein, The interconnect structures are not directly connected to any of the light emission layers.

47. The micro-LED display panel of claim 46, wherein, The micro-LED comprises three or more light emission layers along the vertical direction, and the interconnect structures comprise two or more bottom interconnect structures that are respectively electrically connected to the bottom of each of the light emission layers of the micro-LED except for the bottommost light emission layer.

48. The micro-LED display panel of claim 47, wherein, a bottom of the bottommost light emission layer is connected to the IC backplane by a bottom conductive connection structure formed between the bottom of the bottommost light emission layer and the IC backplane.

49. The micro-LED display panel of claim 47, wherein, The number of the bottom interconnection structures for the micro-LEDs is equal to the number of light emission layers of the micro-LEDs minus one.

50. The micro-LED display panel of claim 46, wherein, The light emission layers include a first light emission layer, a second light emission layer, and a third light emission layer arranged along a vertical direction, the bottom interconnection structures include a first bottom interconnection structure and a second bottom interconnection structure, the first bottom interconnection structure is used to connect a bottom of the first light emission layer of each of the micro-LEDs, the second bottom interconnection structure is used to connect a bottom of the second light emission layer of each of the micro-LEDs, and the first bottom interconnection structure and the second bottom interconnection structure are symmetrically arranged around each micro-pixel region in the micro-LED display panel.

51. The micro-LED display panel of claim 50, wherein, The top interconnection structure is symmetrically arranged in the micro-LED display panel. 52.The micro-LED display panel of claim 50, wherein, A center of symmetry is a center of the micro-LED.

53. The micro-LED display panel of any one of claims 43-45, further comprising a conductive layer network structure configured to connect the light emission layers to the interconnection structures.

54. The micro-LED display panel of claim 53, wherein, The conductive layer network structure includes one or more top conductive layers formed on a top surface of each of the light emission layers to connect the light emission layers to the top interconnection structure and one or more bottom conductive layers formed at a bottom surface of each of the light emission layers to connect the light emission layers to the bottom interconnection structure.

55. The micro-LED display panel of claim 54, wherein, Each of the top conductive layers is continuous between adjacent micro-LEDs, and each of the bottom conductive layers is discontinuous between adjacent micro-LEDs, and the bottom interconnection structure is individually connected to a corresponding bottom conductive layer of each of the micro-LEDs. 56.The micro-LED display panel of claim 53, wherein, The conductive layer network structure is transparent.

57. The micro-LED display panel of claim 56, wherein, A material of the conductive layer network structure is one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), or aluminum-doped zinc oxide (AZO).

58. The micro-LED display panel of claim 55, wherein, A bottom conductive layer of the bottommost light emission layer is opaque.

59. The micro-LED display panel of claim 53, wherein, A sum of profiles of the conductive layers connected to the micro-LEDs is not less than half of a circumference of the micro-pixel region.

60. The micro-LED display panel of any one of claims 43-45, further comprising a dielectric layer formed between the light emission layers and around the interconnection structures.

61. The micro-LED display panel of claim 60, wherein, The dielectric layer is transparent.

62. The micro-LED display panel of any of claims 43-45, wherein, The bottom interconnection structure is formed on a top surface of the IC backplane and electrically connected to the IC backplane.

63. The micro-LED display panel of claim 62, wherein, A top of the bottom interconnection structure is lower than a top of the topmost light emission layer.

64. The micro-LED display panel of any of claims 43-45, wherein, The top interconnection structure passes through a top and a bottom of the micro-LED, and a top of the top interconnection structure is higher than the top of the micro-LED.

65. The micro-LED display panel of claim 64, wherein, The light emission layer is formed by a stacked P-N junction layer including a P-type semiconductor layer, a quantum well layer, and an N-type semiconductor layer.

66. The micro-LED display panel of claim 65, wherein, The P-type semiconductor layer and / or the N-type semiconductor layer includes a III-V compound semiconductor.

67. The micro-LED display panel of claim 65, wherein, The quantum well layer of the topmost light emission layer is continuously formed between adjacent micro-LEDs and continuously formed over the micro-pixel array region.

68. The micro-LED display panel of claim 67, wherein, A top contact is disposed on the quantum well layer between adjacent micro-LEDs.

69. The micro-LED display panel of claim 68, wherein, An opening is formed in the quantum well layer between adjacent micro-LEDs; and a top conductive connection structure is disposed through the opening to connect the top interconnection structure with the top contact.

70. The micro-LED display panel of claim 69, wherein, A plurality of the top contacts are continuously connected to form a mesh structure, wherein the micro-LEDs are exposed.

71. The micro-LED display panel of claim 69, wherein, The width of the top conductive connection structure is less than the width of the top interconnection structure; and the width of the top contact is greater than the width of the top conductive connection structure. 72.The micro-LED display panel of claim 71, wherein, The width of the top contact is greater than the width of the top interconnection structure. 73.The micro-LED display panel of claim 72, wherein, The width of the top contact is greater than the width of the bottom interconnection structure.

74. The micro-LED display panel of any of claims 43-45, wherein, The interconnection structure is made of a conductive metal.

75. The micro-LED display panel of any of claims 43-45, wherein, The light emission layer emits at least two different colors of light. 76.The micro-LED display panel of claim 75, wherein, The light emission layer includes a red light emission layer, a blue light emission layer, and a green light emission layer.

77. The micro-LED display panel of claim 75, wherein, The light emission layer includes a green light emission layer and two red light emission layers.

78. The micro-LED display panel of any of claims 43-45, wherein, The light emission layer emits the same color of light.

79. The micro-LED display panel of any of claims 43-45, wherein, The micro-LED further includes a mesa structure formed by the light emission layer.

80. The micro-LED display panel of claim 79, wherein, The mesa structure includes a flat top surface.

81. The micro-LED display panel of claim 80, wherein, The mesa structure includes a convex structure.

82. The micro-LED display panel of claim 80, wherein, The surface of the mesa structure is aligned with the surface of the micro-LED.

83. The micro-LED display panel of claim 79, wherein, The micro-LED further includes a microlens disposed over the light emission layer covering the area of the mesa structure.

84. The micro-LED display panel of any of claims 43-45, further comprising a reflective layer formed on a bottom surface of a bottommost light emission layer of the at least two light emission layers.

85. The micro-LED display panel of any of claims 43-45, wherein, The plurality of interconnection structures are configured to reflect light emitted from the at least two light emission layers.

86. The micro-LED display panel of any of claims 43-45, further comprising external wires for connecting the top interconnection structure to the first electrodes, wherein, The first electrode is disposed on the IC backplane.

87. A micro-LED display panel, comprising: a micro-pixel array region including a plurality of micro-pixel regions, each micro-pixel region including a micro-LED; wherein the micro-LED includes at least two light emission layers disposed along a vertical direction and a dielectric layer formed between adjacent ones of the light emission layers; an IC backplane formed at a back surface of the micro-LED and configured to control the light emission layers; and an IC backplane formed at a back surface of the micro-LED and configured to control the light emission layers. a plurality of interconnection structures configured to electrically connect the light emitting layers to electrodes respectively, wherein the interconnection structures comprise one or more top interconnection structures configured to electrically connect a top of each of the light emitting layers to a first electrode and one or more bottom interconnection structures configured to electrically connect a bottom of each of the light emitting layers to the IC backplane to a second electrode, the interconnection structures are formed around each micro-pixel region, one bottom interconnection structure corresponds to one micro-LED, and one top interconnection structure corresponds to adjacent micro-LEDs, the top conductive layers of adjacent micro-LEDs are connected to the same top interconnection structure, the top interconnection structures are symmetrically arranged in the micro-LED display panel; and a plurality of top contacts configured to connect the one or more top interconnection structures to the first electrode, wherein the top contacts are connected continuously to form a mesh structure, wherein the micro-LEDs are exposed.

88. The micro-LED display panel of claim 87, wherein, The plurality of interconnection structures are symmetrically arranged around each micro-LED in the micro-LED display panel.

89. The micro-LED display panel of claim 87, wherein, The interconnection structures are not directly connected to any of the light emitting layers. 90.The micro-LED display panel of claim 89, wherein, The micro-LEDs comprise three or more light emitting layers along the vertical direction, and the interconnection structures comprise two or more bottom interconnection structures that are respectively electrically connected to the bottom of each light emitting layer of the micro-LEDs except the bottommost light emitting layer.

91. The micro-LED display panel of claim 90, wherein, The bottom of the bottommost light emitting layer is connected to the IC backplane through a bottom conductive connection structure formed between the bottom of the bottommost light emitting layer and the IC backplane. 92.The micro-LED display panel of claim 90, wherein, The number of the bottom interconnection structures for the micro-LEDs is equal to the number of light emitting layers of the micro-LEDs minus one. 93.The micro-LED display panel of claim 89, wherein, The light emitting layers comprise a first light emitting layer, a second light emitting layer, and a third light emitting layer arranged along a vertical direction, the bottom interconnection structures comprise a first bottom interconnection structure and a second bottom interconnection structure, the first bottom interconnection structure is used to connect the bottom of the first light emitting layer of each of the micro-LEDs, the second bottom interconnection structure is used to connect the bottom of the second light emitting layer of each of the micro-LEDs; and the first bottom interconnection structure and the second bottom interconnection structure are symmetrically arranged around each micro-pixel region in the micro-LED display panel.

94. The micro-LED display panel of claim 93, wherein, The top interconnection structures are symmetrically arranged in the micro-LED display panel. 95.The micro-LED display panel of claim 93, wherein, The center of symmetry is the center of the micro-LED.

96. The micro-LED display panel of any one of claims 87-95, further comprising a network structure of conductive layers configured to connect the light emitting layers to the interconnection structures.

97. The micro-LED display panel of claim 96, wherein, The conductive layer network structure includes one or more top conductive layers formed on a top surface of each of the light emitting layers to connect the light emitting layers with the top interconnect structure, and one or more bottom conductive layers formed at a bottom surface of each of the light emitting layers to connect the light emitting layers with the bottom interconnect structure.

98. The micro-LED display panel of claim 97, wherein, Each of the top conductive layers is continuous between adjacent micro-LEDs; and each of the bottom conductive layers is discontinuous between adjacent micro-LEDs, and the bottom interconnect structure is individually connected with a corresponding bottom conductive layer of each of the micro-LEDs.

99. The micro-LED display panel of claim 96, wherein, The conductive layer network structure is transparent.

100. The micro-LED display panel of claim 99, wherein, The material of the conductive layer network structure is one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), or aluminum-doped zinc oxide (AZO).

101. The micro-LED display panel of claim 100, wherein, The bottom conductive layer of the bottommost light emitting layer is opaque. 102.The micro-LED display panel of claim 96, wherein, The sum of the profiles of the conductive layers connected to the micro-LEDs is no less than half of the circumference of the micro-pixel region.

103. The micro-LED display panel of any of claims 87-95, further comprising a dielectric layer formed between the light emitting layers and around the interconnect structure.

104. The micro-LED display panel of claim 103, wherein, The dielectric layer is transparent.

105. The micro-LED display panel of any of claims 87-95, wherein, The bottom interconnect structure is formed on a top surface of the IC backplane and is electrically connected with the IC backplane.

106. The micro-LED display panel of claim 105, wherein, A top of the bottom interconnect structure is lower than a top of the topmost light emitting layer.

107. The micro-LED display panel of any of claims 87-95, wherein, The top interconnect structure passes through the top and bottom of the micro-LED, and a top of the top interconnect structure is higher than the top of the micro-LED.

108. The micro-LED display panel of claim 107, wherein, The light emitting layers are formed by stacked P-N junction layers including a P-type semiconductor layer, a quantum well layer, and an N-type semiconductor layer. 109.The micro-LED display panel of claim 108, wherein, The P-type semiconductor layer and / or the N-type semiconductor layer includes a III-V compound semiconductor.

110. The micro-LED display panel of claim 108, wherein, The quantum well layer of the topmost light emitting layer is continuous between adjacent micro-LEDs and is continuous over the micro-pixel array region.

111. The micro-LED display panel of claim 110, wherein, The top contact is disposed on the quantum well layer between adjacent micro-LEDs.

112. The micro-LED display panel of claim 111, wherein, An opening is formed in the quantum well layer between adjacent micro-LEDs; and a top conductive connection structure is disposed through the opening to connect the top interconnect structure with the top contact.

113. The micro-LED display panel of claim 112, wherein, A width of the top conductive connection structure is less than a width of the top interconnect structure; and a width of the top contact is greater than the width of the top conductive connection structure.

114. The micro-LED display panel of claim 113, wherein, A width of the top contact is greater than a width of the top interconnect structure.

115. The micro-LED display panel of claim 114, wherein, A width of the top contact is greater than a width of the bottom interconnect structure.

116. The micro-LED display panel of any of claims 87-95, wherein, The interconnect structure is made of a conductive metal.

117. The micro-LED display panel of any of claims 87-95, wherein, The light emitting layers emit at least two different colors of light.

118. The micro-LED display panel of claim 117, wherein, The light emitting layers include a red light emitting layer, a blue light emitting layer, and a green light emitting layer.

119. The micro-LED display panel of claim 117, wherein, The light emitting layers include a green light emitting layer and two red light emitting layers.

120. The micro-LED display panel of any of claims 87-95, wherein, The light emitting layers emit the same color of light.

121. The micro-LED display panel of any of claims 87-95, wherein, The micro-LED further includes a mesa structure formed from the light emission layer.

122. The micro-LED display panel of claim 121, wherein, The mesa structure includes a planar top surface.

123. The micro-LED display panel of claim 122, wherein, The mesa structure includes a convex structure.

124. The micro-LED display panel of claim 122, wherein, A surface of the mesa structure is aligned with a surface of the micro-LED.

125. The micro-LED display panel of claim 121, wherein, The micro-LED further includes a microlens disposed over the light emission layer covering an area of the mesa structure.

126. The micro-LED display panel of any of claims 87-95, further comprising a reflective layer formed on a bottom surface of a bottommost light emission layer of the at least two light emission layers.

127. The micro-LED display panel of any of claims 87-95, wherein, The plurality of interconnect structures are configured to reflect light emitted from the at least two light emission layers.

128. The micro-LED display panel of any of claims 87-95, further comprising external wires for connecting the top interconnection structure to the first electrodes, wherein, The first electrode is disposed on the IC backplane.

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