Color film substrate, manufacturing method thereof, and display device

Abstract

The application discloses a color film substrate and a manufacturing method thereof, and a display device. The manufacturing method comprises the following steps: forming a first color resistance material film on a substrate, performing a patterning treatment on the first color resistance material film, and forming a first color resistance layer corresponding to a first pixel unit and at least part of a light shielding area, wherein the first color resistance layer is provided with a first thinning groove penetrating through the first color resistance layer in the light shielding area; forming a second color resistance material film on the substrate, performing a patterning treatment on the second color resistance material film, and forming a second color resistance layer corresponding to a second pixel unit and at least part of the light shielding area, wherein the first color resistance layer and the second color resistance layer have a mutually overlapped part in the light shielding area. At least two color resistance layers are overlapped in the light shielding area to replace a black rectangle and simplify a manufacturing process; in the process of manufacturing the first color resistance layer, the first color resistance layer is provided with the first thinning groove penetrating through the first color resistance layer in the light shielding area, so that the thickness of the overlapped part of the color resistance in the light shielding area can be reduced, and the flatness of the color film substrate is improved.

Description

Technical Field

[0001] This invention relates to the technical field of displays, and in particular to a color filter substrate, its manufacturing method, and a display device. Background Technology

[0002] Liquid crystal displays (LCDs) have numerous advantages, including thinness, energy efficiency, and no radiation, leading to their widespread use. Examples include LCD televisions, mobile phones, personal digital assistants (PDAs), digital cameras, computer screens, and laptop screens, where they dominate the flat panel display field.

[0003] Traditional liquid crystal display (LCD) panels consist of a color filter substrate (CF), a thin-film transistor array substrate (TFT array substrate), and a liquid crystal layer filling the space between the two substrates. The array substrate has metal electrodes made of metallic materials (such as molybdenum, aluminum, and copper) for scanning lines, data lines, common electrode lines, gate electrodes, source electrodes, and drain electrodes. The CF substrate has multiple color resist layers arranged in an array and black rectangles separating these layers. The color resist layers include red, green, and blue color resist materials, corresponding to red, green, and blue sub-pixels respectively. The black rectangles correspond to the areas containing the metal electrodes and the border areas, thus masking these areas. Each of the black rectangles and the red, green, and blue color resist layers requires a masking process, resulting in a large number of masks and a complex manufacturing process for this type of CF substrate.

[0004] In existing technologies, to simplify the fabrication process of the color filter substrate, the step of removing the black rectangle is eliminated. Instead, a light-blocking effect is achieved by overlapping two or more layers of different colored resist materials, thus replacing the black rectangle. However, this overlapping of two or more layers of different colored resist materials results in a higher thickness in the overlapping area, leading to poor flatness of the color filter substrate. A thicker flattening layer is required to achieve a relatively flat surface, significantly increasing the thickness of the color filter substrate. Summary of the Invention

[0005] In order to overcome the shortcomings and deficiencies of the prior art, the present invention aims to provide a color filter substrate, a manufacturing method thereof, and a display device, so as to solve the problems of complex manufacturing process and poor flatness of color filter substrate in the prior art.

[0006] The objective of this invention is achieved through the following technical solution:

[0007] This invention provides a method for manufacturing a color filter substrate, the color filter substrate having a light-transmitting area and a light-blocking area that separates multiple light-transmitting areas from each other, wherein the light-transmitting area contains a first pixel unit, a second pixel unit, and a third pixel unit of different colors, and the manufacturing method includes:

[0008] Provide substrate;

[0009] A first color resist material film is formed on the substrate. The first color resist material film is patterned to form a first color resist layer. The first color resist layer corresponds to a first pixel unit and at least a partial light-shielding area. The first color resist layer has a first thinning groove penetrating the first color resist layer in the light-shielding area. The patterned first color resist layer is cured. Before the first color resist layer is cured, the first color resist material near the first thinning groove flows toward the first thinning groove and covers the first thinning groove.

[0010] A second color resist material film is formed on the substrate, the second color resist material film is patterned and a second color resist layer is formed, the second color resist layer corresponds to the second pixel unit and at least part of the light-shielding area, the first color resist layer and the second color resist layer have overlapping portions in the light-shielding area; the patterned second color resist layer is cured.

[0011] A third color resist material film is formed on the substrate, the third color resist material film is patterned to form a third color resist layer, the third color resist layer corresponding to at least a third pixel unit; the patterned third color resist layer is cured.

[0012] Furthermore, the second color resist layer has a second thinning groove penetrating the second color resist layer within the light-shielding area. Before the second color resist layer is cured, the second color resist material near the second thinning groove flows toward the second thinning groove and covers the second thinning groove.

[0013] Furthermore, the third color resist layer corresponds to at least a portion of the light-shielding area, and the third color resist layer has a third thinning groove penetrating the third color resist layer within the light-shielding area. Before the third color resist layer is cured, the third color resist material near the third thinning groove flows toward the third thinning groove and covers the third thinning groove.

[0014] Furthermore, the light-shielding area has a first overlapping area, a second overlapping area, and a third overlapping area. The first overlapping area is located at the edge of the color filter substrate, between two rows of pixel units, and between an adjacent column of first pixel units and a column of second pixel units. The second overlapping area is located between an adjacent column of first pixel units and a column of third pixel units. The third overlapping area is located between an adjacent column of second pixel units and a column of third pixel units.

[0015] The first overlapping region is formed by at least the first color resist layer and the second color resist layer overlapping each other; the second overlapping region is formed by at least the first color resist layer and the third color resist layer overlapping each other; and the third overlapping region is formed by at least the second color resist layer and the third color resist layer overlapping each other.

[0016] Furthermore, the planar shape of the thinning groove is at least one of the following: rectangular, trapezoidal, triangular, circular, and annular.

[0017] The density and / or size of the thinning grooves in the color resist layer gradually increase towards the edge of the color resist layer;

[0018] The projections of the thinning trenches in the overlapping color resist layers onto the substrate are staggered.

[0019] The thinning groove includes one or more combinations of a first thinning groove, a second thinning groove, and a third thinning groove.

[0020] This application also provides a method for manufacturing a color filter substrate, the color filter substrate having a light-transmitting area and a light-blocking area that separates multiple light-transmitting areas from each other, wherein the light-transmitting area contains a first pixel unit, a second pixel unit, and a third pixel unit of different colors, and the manufacturing method includes:

[0021] Provide substrate;

[0022] A first color resist material film is formed on the substrate. The first color resist material film is patterned using a first halftone mask to form a first color resist layer. The first color resist layer corresponds to a first pixel unit and at least a partial light-shielding area. The thickness of the first color resist layer in the light-shielding area is less than the thickness in the first pixel unit. The patterned first color resist layer is then cured.

[0023] A second color resist material film is formed on the substrate, the second color resist material film is patterned and a second color resist layer is formed, the second color resist layer corresponds to the second pixel unit and at least part of the light-shielding area, the first color resist layer and the second color resist layer have overlapping portions in the light-shielding area; the patterned second color resist layer is cured.

[0024] A third color resist material film is formed on the substrate, the third color resist material film is patterned to form a third color resist layer, the third color resist layer corresponding to at least a third pixel unit; the patterned third color resist layer is cured.

[0025] Furthermore, a second halftone mask is used to pattern the second color resist material film, and the thickness of the second color resist layer in the light-shielding area is less than the thickness in the second pixel unit.

[0026] The third color resist material film is patterned using a third halftone mask. The third color resist layer corresponds to at least a portion of the light-shielding area, and the thickness of the third color resist layer in the light-shielding area is less than the thickness in the third pixel unit.

[0027] Furthermore, the first color resist layer and the second color resist layer completely cover the light-shielding area, and the light-shielding area is formed by the first color resist layer and the second color resist layer overlapping each other;

[0028] The first color resist film, the second color resist film and the third color resist film are each a red color resist film, a blue color resist film and a green color resist film, respectively.

[0029] The outer periphery of the color filter substrate has a border area, which is covered by the light-shielding area; or the border area is covered by both the light-transmitting area and the light-shielding area, and the light-transmitting area within the border area is located on the outer periphery of the light-shielding area.

[0030] This application also provides a color filter substrate, which is manufactured using the color filter substrate manufacturing method described above.

[0031] This application also provides a display device, including a color filter substrate as described above.

[0032] The beneficial effects of this invention are as follows: by setting a first color resist layer, a second color resist layer, and a third color resist layer on the substrate, and using at least two color resist layers overlapping each other in the light-shielding area, the light-shielding effect can be achieved without using a black rectangle, simplifying the manufacturing process; moreover, during the fabrication of the first color resist layer, the first color resist layer has a first thinning groove penetrating the first color resist layer in the light-shielding area. Since the color resist material has a certain fluidity before curing, the first color resist material near the first thinning groove flows toward the first thinning groove and covers the first thinning groove before curing, thereby reducing the thickness of the overlapping part of the color resist in the light-shielding area and improving the flatness of the color filter substrate. Attached Figure Description

[0033] Figure 1 This is a schematic diagram of the cross-sectional structure of the color filter substrate in Embodiment 1 of the present invention;

[0034] Figure 2 This is a schematic diagram of the planar structure of the color filter substrate in Embodiment 1 of the present invention;

[0035] Figure 3 This is a schematic diagram of the planar structure of the first color resist layer in Embodiment 1 of the present invention;

[0036] Figure 4 This is a schematic diagram of the planar structure of the second color resist layer in Embodiment 1 of the present invention;

[0037] Figure 5 This is a schematic diagram of the planar structure of the third color resist layer in Embodiment 1 of the present invention;

[0038] Figure 6 This is a simulation diagram of the light transmittance of single-layer and double-layer color resist in Embodiment 1 of the present invention;

[0039] Figures 7a to 7g-2 This is a schematic diagram of the fabrication process of the color filter substrate in Embodiment 1 of the present invention;

[0040] Figure 8 This is one of the planar structural schematic diagrams of the thinning groove in Embodiment 1 of the present invention;

[0041] Figure 9 This is the second schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention;

[0042] Figure 10 This is the third schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention;

[0043] Figure 11 This is the tenth schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention;

[0044] Figure 12 This is the fifth schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention;

[0045] Figure 13 This is the sixth schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention;

[0046] Figure 14 This is the seventh schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention;

[0047] Figure 15 This is the eighth schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention;

[0048] Figures 16a to 16c This is a schematic diagram of the fabrication process of the color filter substrate in Embodiment 2 of the present invention;

[0049] Figure 17 This is a schematic diagram of the cross-sectional structure of the color filter substrate in Embodiment 3 of the present invention;

[0050] Figure 18 This is a schematic diagram of the planar structure of the color filter substrate in Embodiment 3 of the present invention;

[0051] Figure 19 This is a schematic diagram of the planar structure of the color filter substrate in Embodiment 4 of the present invention;

[0052] Figure 20 This is a schematic diagram of the display device in the dark state according to the present invention;

[0053] Figure 21 This is a schematic diagram of the display device in the bright state in this invention. Detailed Implementation

[0054] To further illustrate the technical means and effects adopted by the present invention to achieve the intended purpose, the following detailed description, in conjunction with the accompanying drawings and preferred embodiments, provides a detailed explanation of the specific implementation methods, structures, features, and effects of the color filter substrate and manufacturing method, and the display device proposed according to the present invention:

[0055] [Example 1]

[0056] Figure 1 This is a schematic diagram of the cross-sectional structure of the color filter substrate in Embodiment 1 of the present invention. Figure 2 This is a schematic diagram of the planar structure of the color filter substrate in Embodiment 1 of the present invention. Figure 3 This is a schematic diagram of the planar structure of the first color resist layer in Embodiment 1 of the present invention. Figure 4 This is a schematic diagram of the planar structure of the second color resist layer in Embodiment 1 of the present invention. Figure 5 This is a schematic diagram of the planar structure of the third color resist layer in Embodiment 1 of the present invention.

[0057] like Figures 1 to 5 As shown in Embodiment 1 of the present invention, a color filter substrate is provided. The color filter substrate has a light-transmitting area 110 and a light-shielding area 120 that separates multiple light-transmitting areas 110 from each other. The light-transmitting area 110 contains a first pixel unit P1, a second pixel unit P2, and a third pixel unit P3 of different colors. The light-shielding area 120 is formed by overlapping at least two different colors of color resist material, thus eliminating the need for a black rectangle to achieve the light-shielding effect and simplifying the manufacturing process.

[0058] The color filter substrate is provided with a first color resist layer 11, a second color resist layer 12 and a third color resist layer 13. The first color resist layer 11 corresponds to the first pixel unit P1 and at least part of the light-shielding area 120. The second color resist layer 12 corresponds to the second pixel unit P2 and at least part of the light-shielding area 120. The third color resist layer 13 corresponds to at least the third pixel unit P3. The first color resist layer 11 and the second color resist layer 12 have overlapping portions in the light-shielding area 120.

[0059] In this embodiment, the third color resist layer 13 also corresponds to at least a portion of the light-shielding area 120. The first color resist layer 11 and the third color resist layer 13 have overlapping portions in the light-shielding area 120, and the third color resist layer 13 and the second color resist layer 12 have overlapping portions in the light-shielding area 120. Of course, in other embodiments, the first color resist layer 11 and the second color resist layer 12 completely cover the light-shielding area 120, that is, the entire light-shielding area 120 is formed by the overlapping of the first color resist layer 11 and the second color resist layer 12.

[0060] Furthermore, such as Figures 2 to 6 As shown, the light-shielding area 120 has a first overlapping area C1, a second overlapping area C2, and a third overlapping area C3. The first overlapping area C1 is located at the edge of the color filter substrate, between two rows of pixel units P, and between an adjacent column of first pixel units P1 and a column of second pixel units P2. The second overlapping area C2 is located between an adjacent column of first pixel units P1 and a column of third pixel units P3. The third overlapping area C3 is located between an adjacent column of second pixel units P2 and a column of third pixel units P3.

[0061] In this embodiment, the first overlapping area C1 consists of the first color resist layer 11 and the second color resist layer 12 overlapping each other; the second overlapping area C2 consists of the first color resist layer 11 and the third color resist layer 13 overlapping each other; and the third overlapping area C3 consists of the second color resist layer 12 and the third color resist layer 13 overlapping each other. That is, the first color resist layer 11 and the second color resist layer 12 are both full-surface grid structures, and the third color resist layer 13 is a block structure. Of course, in other embodiments, the first overlapping area C1, the second overlapping area C2, and the third overlapping area C3 can all consist of the three layers of color resist: the first color resist layer 11, the second color resist layer 12, and the third color resist layer 13 overlapping each other.

[0062] Furthermore, the thickness of the first color resist layer 11 within the light-shielding area 120 is less than its thickness within the first pixel unit P1, the thickness of the second color resist layer 12 within the light-shielding area 120 is less than its thickness within the second pixel unit P2, and the thickness of the third color resist layer 13 within the light-shielding area 120 is less than its thickness within the third pixel unit P3. That is, the first color resist layer 11, the second color resist layer 12, and the third color resist layer 13 are all thinned within the light-shielding area 120, thereby reducing the thickness of the overlapping portion of the color resists in the light-shielding area 120 and improving the flatness of the color filter substrate. Of course, in other embodiments, only one or two of the first color resist layer 11, the second color resist layer 12, and the third color resist layer 13 may be thinned within the light-shielding area 120; however, the thinning effect is slightly less, but the manufacturing process can be simplified. Optionally, the thickness of the color resist layer within the light-shielding area 120 is the same as the thickness of the color resist layer within the light-transmitting area 110.

[0063] Furthermore, the first color resist layer 11, the second color resist layer 12, and the third color resist layer 13 are respectively red, blue, and green color resists. The color of the first pixel unit P1 is the same as the color of the first color resist layer 11, the color of the second pixel unit P2 is the same as the color of the second color resist layer 12, and the color of the third pixel unit P3 is the same as the color of the third color resist layer 13. In this embodiment, the first color resist layer 11 is a red color resist, the second color resist layer 12 is a blue color resist, the third color resist layer 13 is a green color resist, the first pixel unit P1 is a red pixel unit, the second pixel unit P2 is a blue pixel unit, and the third pixel unit P3 is a green pixel unit. Of course, in other embodiments, the first color resist layer 11 is a red color resist, the second color resist layer 12 is a green color resist, and the third color resist layer 13 is a blue color resist; or, the first color resist layer 11 is a blue color resist, the second color resist layer 12 is a red color resist, and the third color resist layer 13 is a green color resist; or, the first color resist layer 11 is a blue color resist, the second color resist layer 12 is a green color resist, and the third color resist layer 13 is a red color resist; or, the first color resist layer 11 is a green color resist, the second color resist layer 12 is a blue color resist, and the third color resist layer 13 is a red color resist; or, the first color resist layer 11 is a green color resist, the second color resist layer 12 is a red color resist, and the third color resist layer 13 is a blue color resist.

[0064] Figure 6 This is a simulation diagram of the light transmittance of single-layer and double-layer color resists in Embodiment 1 of the present invention. Figure 6 As shown in the figure, curves R, G, and B represent the light transmittance of red, green, and blue color resists, respectively. Red color resist primarily transmits red light, green color resist primarily transmits green light, and blue color resist primarily transmits blue light. Curves a, b, and c represent the light transmittance when red and green color resists overlap, red and blue color resists overlap, and green and blue color resists overlap, respectively. It can be seen from the figure that the light transmittance is relatively low when red and green color resists overlap, red and blue color resists overlap, and green and blue color resists overlap.

[0065]

[0066] As shown in the table above, the OD value of overlapping red and blue color resists (R&B) is 3.35, the OD value of overlapping green and blue color resists (G&B) is 1.18, the OD value of overlapping red and green color resists (R&G) is 1.78, the OD value of overlapping red, green, and blue color resists (R&G&B) is 4.2, and the OD value of the existing black rectangle (BM) is 4.0. Among these, the light-blocking effect of overlapping red, green, and blue color resists is better than that of the black rectangle, but the thickness is greater. The light-blocking effect of overlapping red and blue color resists is the best among double-layer color resists. Therefore, the light-blocking area 120 is preferably composed of overlapping red and blue color resists, which is not only thinner but also has a better light-blocking effect.

[0067] Furthermore, the color filter substrate is also provided with a planarization layer 14 covering the first color resist layer 11, the second color resist layer 12 and the third color resist layer 13. Support pillars (PS) can also be provided on the planarization layer 14 so that the color filter substrate and the array substrate 20 can be assembled into a cell to provide support.

[0068] Figures 7a to 7g-2 This is a schematic diagram of the fabrication process of the color filter substrate in Embodiment 1 of the present invention. Figures 7a to 7g-2 As shown, this application also provides a method for manufacturing a color filter substrate, used to manufacture the color filter substrate as described above. The color filter substrate has a light-transmitting area 110 and a light-blocking area 120 that spaces the plurality of light-transmitting areas 110 apart from each other. The light-transmitting areas 110 contain a first pixel unit P1, a second pixel unit P2, and a third pixel unit P3 of different colors. (Referring to...) Figures 2 to 6 As shown, the light-shielding area 120 has a first overlapping area C1, a second overlapping area C2, and a third overlapping area C3. The first overlapping area C1 is located at the edge of the color filter substrate, between two rows of pixel units P, and between an adjacent column of first pixel units P1 and a column of second pixel units P2. The second overlapping area C2 is located between an adjacent column of first pixel units P1 and a column of third pixel units P3. The third overlapping area C3 is located between an adjacent column of second pixel units P2 and a column of third pixel units P3.

[0069] The manufacturing method includes:

[0070] like Figure 7a As shown, a substrate 10 is provided. The substrate 10 may be made of materials such as glass, quartz, silicon, acrylic, or polycarbonate. The substrate 10 may also be a flexible substrate. Suitable materials for flexible substrates include, for example, polyethersulfone (PES), polyethylene naphthalate (PEN), polyethylene (PE), polyimide (PI), polyvinyl chloride (PVC), polyethylene terephthalate (PET), or combinations thereof.

[0071] like Figure 7b-1 and Figure 7b-2 As shown, a first color resist material film is formed on the substrate 10. The first color resist material film is patterned to form a first color resist layer 11. The patterning process includes exposing the first color resist material film to a mask, followed by development, to form a pattern corresponding to the mask. The first color resist layer 11 corresponds to the first pixel unit P1 and at least part of the light-shielding area 120. The first color resist layer 11 has a first thinning groove 111 penetrating the first color resist layer 11 within the light-shielding area 120. In this embodiment, refer to... Figure 3 The first color resist layer 11 covers the first pixel unit P1, the first overlapping area C1, and the second overlapping area C2, meaning that the first color resist layer 11 has a first opening corresponding to the second pixel unit P2, the third pixel unit P3, and the third overlapping area C3. The outer edge and inner edge of the first color resist layer 11 are both provided with first thinning grooves 111. The outer edge is a side away from the center of the first color resist layer 11, and the inner edge is a side facing the first opening area of ​​the first color resist layer 11.

[0072] like Figure 7c-1 and Figure 7c-2 As shown, the patterned first color resist layer 11 is cured (e.g., baked). Before the first color resist layer 11 is cured, the first color resist material near the first thinning groove 111 flows toward and covers the first thinning groove 111. Alternatively, the curing process can be performed after the first color resist material near the first thinning groove 111 has flowed toward and covered the first thinning groove 111. Or, the first color resist material near the first thinning groove 111 can flow toward and cover the first thinning groove 111 during the curing process. It is sufficient to ensure that the first color resist material near the first thinning groove 111 flows toward and covers the first thinning groove 111 before the first color resist layer 11 is cured. During the curing process, the first color resist layer 11 has good fluidity when it is first heated, which allows the first color resist material near the first thinning groove 111 to flow toward and cover the first thinning groove 111. Then, with continued heating, the first color resist layer 11 will slowly cure. Because the first color resist material near the first thinning groove 111 flows toward the first thinning groove 111, the thickness of the first color resist layer 11 near the first thinning groove 111 can be reduced, thereby reducing the thickness of the overlapping portion of the color resist in the light-shielding area 110 and improving the flatness of the color filter substrate.

[0073] like Figure 7d-1 and Figure 7d-2As shown, a third color resist material film is formed on the substrate 10. The third color resist material film is patterned to form a third color resist layer 13. The patterning process includes exposing the third color resist material film to a mask, followed by development, to form a pattern corresponding to the mask. The third color resist layer 13 corresponds to the third pixel unit P3 and at least part of the light-shielding area 120. The first color resist layer 11 and the third color resist layer 13 have overlapping portions in the light-shielding area 120. The third color resist layer 13 has a third thinning groove 131 penetrating the third color resist layer 13 within the light-shielding area 120. In this embodiment, refer to... Figure 5 The third color resist layer 13 covers the third pixel unit P3, the second overlapping area C2, and the third overlapping area C3. That is, the first color resist layer 11 is a block structure corresponding to the third pixel unit P3, the second overlapping area C2, and the third overlapping area C3. The first color resist layer 11 and the third color resist layer 13 overlap each other in the second overlapping area C2. The third color resist layer 13 has a third thinning groove 131 on the side facing the first pixel unit P1 and the third pixel unit P3.

[0074] like Figure 7e-1 and Figure 7e-2 As shown, the patterned third color resist layer 13 is cured (e.g., baked). Before the third color resist layer 13 is cured, the third color resist material near the third thinning groove 131 flows toward and covers the third thinning groove 131. Alternatively, the curing process can be performed after the third color resist material near the third thinning groove 131 has flowed toward and covered the third thinning groove 131. Or, the third color resist material near the third thinning groove 131 can flow toward and cover the third thinning groove 131 during the curing process. It is sufficient to ensure that the third color resist material near the third thinning groove 131 flows toward and covers the third thinning groove 131 before the third color resist layer 13 is cured. During the curing process, the third color resist layer 13 has good fluidity when it is first heated, allowing the third color resist material near the third thinning groove 131 to flow towards and cover the third thinning groove 131. Then, with continued heating, the third color resist layer 13 slowly cures. Because the third color resist material near the third thinning groove 131 flows towards it, the thickness of the third color resist layer 11 near the third thinning groove 131 becomes thinner, thereby reducing the thickness of the overlapping portion of the color resist in the light-shielding area 110 and improving the flatness of the color filter substrate.

[0075] like Figure 7f-1 and Figure 7f-2As shown, a second color resist material film is formed on the substrate 10. The second color resist material film is patterned to form a second color resist layer 12. The patterning process includes exposing the first color resist material film to a mask, followed by development, to form a pattern corresponding to the mask. The second color resist layer 12 corresponds to the second pixel unit P2 and at least part of the light-shielding area 120. The first color resist layer 11 and the second color resist layer 12 have overlapping portions in the light-shielding area 120, and the third color resist layer 13 and the second color resist layer 12 also have overlapping portions in the light-shielding area 120. The second color resist layer 12 has a second thinning groove 121 penetrating the second color resist layer 12 within the light-shielding area 120. In this embodiment, refer to... Figure 4 The second color resist layer 12 covers the second pixel unit P2, the first overlapping area C1, and the third overlapping area C3. That is, the second color resist layer 12 has a second opening corresponding to the first pixel unit P1, the third pixel unit P3, and the second overlapping area C2. The first color resist layer 11 and the second color resist layer 12 overlap each other in the first overlapping area C1, and the second color resist layer 12 and the third color resist layer 13 overlap each other in the third overlapping area C3. The outer edge and the inner edge of the second color resist layer 12 are both provided with a second thinning groove 121. The outer edge is the side away from the center of the second color resist layer 12, and the inner edge is the side facing the second opening area of ​​the second color resist layer 12.

[0076] like Figure 7g-1 and Figure 7g-2 As shown, the patterned second color resist layer 12 is cured (e.g., baked). Before the second color resist layer 12 is cured, the second color resist material near the second thinning groove 121 flows toward and covers the second thinning groove 121. Alternatively, the curing process can be performed after the second color resist material near the second thinning groove 121 has flowed toward and covered the second thinning groove 121. Or, the second color resist material near the second thinning groove 121 can flow toward and cover the second thinning groove 121 during the curing process. It is sufficient to ensure that the second color resist material near the second thinning groove 121 flows toward and covers the second thinning groove 121 before the second color resist layer 12 is cured. During the curing process, the second color resist layer 12 has good fluidity when it is first heated, allowing the second color resist material near the second thinning groove 121 to flow towards and cover the second thinning groove 121. Then, with continued heating, the second color resist layer 12 slowly cures. Because the second color resist material near the second thinning groove 121 flows towards it, the thickness of the second color resist layer 12 near the second thinning groove 121 becomes thinner, thereby reducing the thickness of the overlapping portion of the color resist in the light-shielding area 110 and improving the flatness of the color filter substrate.

[0077] The order in which the first color resist layer 11, the second color resist layer 12, and the third color resist layer 13 are made can be adjusted according to actual needs. For example, the first color resist layer 11, the second color resist layer 12, and the third color resist layer 13 can be made in sequence, or the first color resist layer 11, the third color resist layer 13, and the second color resist layer 12 can be made in sequence, or the second color resist layer 12, the first color resist layer 11, and the third color resist layer 13 can be made in sequence, or the third color resist layer 13, the second color resist layer 12, and the first color resist layer 11 can be made in sequence, or the third color resist layer 13, the first color resist layer 11, and the second color resist layer 12 can be made in sequence.

[0078] In this embodiment, the first overlapping area C1 consists of the first color resist layer 11 and the second color resist layer 12 overlapping each other; the second overlapping area C2 consists of the first color resist layer 11 and the third color resist layer 13 overlapping each other; and the third overlapping area C3 consists of the second color resist layer 12 and the third color resist layer 13 overlapping each other. That is, the first color resist layer 11 and the second color resist layer 12 are both full-surface grid structures, and the third color resist layer 13 is a block structure. Of course, in other embodiments, the first overlapping area C1, the second overlapping area C2, and the third overlapping area C3 can all consist of the three layers of color resist: the first color resist layer 11, the second color resist layer 12, and the third color resist layer 13 overlapping each other. Alternatively, the first color resist layer 11 and the second color resist layer 12 completely cover the light-shielding area 120, that is, the entire light-shielding area 120 consists of the first color resist layer 11 and the second color resist layer 12 overlapping each other.

[0079] In this embodiment, the first color resist layer 11 has a first thinning groove 111 penetrating the first color resist layer 11 within the light-shielding area 120; the second color resist layer 12 has a second thinning groove 121 penetrating the second color resist layer 12 within the light-shielding area 120; and the third color resist layer 13 has a third thinning groove 131 penetrating the third color resist layer 13 within the light-shielding area 120. Of course, in other embodiments, thinning grooves may be provided only for one or two of the first color resist layer 11, the second color resist layer 12, and the third color resist layer 13 within the light-shielding area 120. While the thinning effect will be slightly less, the manufacturing process can still be simplified.

[0080] Furthermore, the first, second, and third color resist films are respectively red, blue, and green color resist films, i.e., the first color resist layer 11, the second color resist layer 12, and the third color resist layer 13 are respectively red, blue, and green color resists. The color of the first pixel unit P1 is the same as the color of the first color resist layer 11, the color of the second pixel unit P2 is the same as the color of the second color resist layer 12, and the color of the third pixel unit P3 is the same as the color of the third color resist layer 13. In this embodiment, the first color resist layer 11 is a red color resist, the second color resist layer 12 is a blue color resist, the third color resist layer 13 is a green color resist, the first pixel unit P1 is a red pixel unit, the second pixel unit P2 is a blue pixel unit, and the third pixel unit P3 is a green pixel unit. Of course, in other embodiments, the first color resist layer 11 is a red color resist, the second color resist layer 12 is a green color resist, and the third color resist layer 13 is a blue color resist; or, the first color resist layer 11 is a blue color resist, the second color resist layer 12 is a red color resist, and the third color resist layer 13 is a green color resist; or, the first color resist layer 11 is a blue color resist, the second color resist layer 12 is a green color resist, and the third color resist layer 13 is a red color resist; or, the first color resist layer 11 is a green color resist, the second color resist layer 12 is a blue color resist, and the third color resist layer 13 is a red color resist; or, the first color resist layer 11 is a green color resist, the second color resist layer 12 is a red color resist, and the third color resist layer 13 is a blue color resist.

[0081] Figure 8 This is one of the planar structural schematic diagrams of the thinning groove in Embodiment 1 of the present invention. Figure 9 This is the second schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention. Figure 10 This is the third schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention. Figure 11 This is the tenth schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention. Figure 12 This is the fifth schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention. Figure 13 This is the sixth schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention. Figure 14 This is the seventh schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention. Figure 15 This is the eighth schematic diagram of the planar structure of the thinning groove in Embodiment 1 of the present invention.

[0082] In this embodiment, the thinning trench includes a first thinning trench 111, a second thinning trench 121, and a third thinning trench 131. The planar shape of the thinning trenches (the first thinning trench 111, the second thinning trench 121, and the third thinning trench 131) (i.e., the projection shape of the thinning trench on the substrate 10) is at least one of a rectangle, trapezoid, triangle, circle, and annulus. Figure 8As shown, the planar shape of the thinning groove is rectangular, with a width S of 2–6 μm and a spacing W of 3–10 μm. The width S and spacing W can be the same, for example, both 3 μm or both 6 μm. Figure 9 As shown, the planar shape of the thinning groove is trapezoidal, with the length of the upper base being shorter than the length of the lower base. The upper base S1 of the trapezoid is 3µm, and the lower base S2 is 10µm. The lower base of the trapezoid is located close to the edge of the color resist layers (first color resist layer 11, second color resist layer 12, and third color resist layer 13), thus making the edge of the color resist layer thinner. This prevents the color resist material near the thinning groove from flowing towards the thinning groove and affecting the thickness of the color resist layer at pixel unit P. Figure 10 As shown, the thinning grooves are square in planar shape and distributed in multiple rows and columns, for example, in a mosaic pattern. The width of the squares is 3–8 μm, and the spacing is 3–8 μm, with the width and spacing being the same. Figure 11 As shown, the thinning grooves are circular in planar shape and distributed in multiple rows and columns, for example, in a mosaic pattern. The width of the squares is 3–8 μm, and the spacing is 3–8 μm, with the width and spacing being the same. Figure 12 and Figure 13 As shown, the planar shape of the thinning groove is annular, and the annular grooves can be arranged in a neat array. Figure 12 It can also be distributed in layers of mosaic ( ), Figure 13 The inner diameter of the ring is 5µm to 15µm, and the outer diameter is 10µm to 20µm. For example... Figure 14 As shown, the planar shapes of the thinning grooves are annular and rectangular, with the annular and rectangular shapes alternating in the row and column directions. Figure 15 As shown, the planar shape of the thinning groove is circular, and the density of the thinning groove gradually increases towards the edge of the color resist layer, thereby making the edge of the color resist layer thinner. This prevents the color resist material near the thinning groove from flowing towards the thinning groove and affecting the thickness of the color resist layer at the pixel unit P. Of course, the size of the thinning groove in the color resist layer can also gradually increase towards the edge of the color resist layer.

[0083] The size and spacing of the thinning grooves (first thinning groove 111, second thinning groove 121 and third thinning groove 131) can be set according to actual needs. It is sufficient that the color resist material near the thinning groove can flow towards the thinning groove and cover the thinning groove before the color resist layer is cured.

[0084] Furthermore, the projections of the thinning grooves in the overlapping color resist layers onto the substrate 10 are staggered. For example, in the first overlap region C1, the projections of the first thinning groove 111 of the first color resist layer 11 and the second thinning groove 121 of the second color resist layer 12 onto the substrate 10 are staggered; in the second overlap region C2, the projections of the first thinning groove 111 of the first color resist layer 11 and the third thinning groove 131 of the third color resist layer 13 onto the substrate 10 are staggered; and in the third overlap region C3, the projections of the second thinning groove 121 of the second color resist layer 12 and the third thinning groove 131 of the third color resist layer 13 onto the substrate 10 are staggered. Since the color resist material near the thinning groove flows towards the thinning groove, the thickness of the color resist layer near the thinning groove is conical, rather than forming a flat surface. By staggering the projections of the thinning grooves in the overlapping color resist layers onto the substrate 10, the flatness of the color resist overlapping region can be improved.

[0085] In other embodiments, the thinning groove may also include a combination of one or more of the first thinning groove 111, the second thinning groove 121 and the third thinning groove 131, without limitation.

[0086] [Example 2]

[0087] Figures 16a to 16c This is a structural schematic diagram of the color filter substrate fabrication process in Embodiment 2 of the present invention. Figures 16a to 16c As shown, the color filter substrate and manufacturing method provided in Embodiment 2 of the present invention are the same as those in Embodiment 1. Figures 1 to 15 The color filter substrate and fabrication method are basically the same as those in the previous embodiment, except that in this embodiment, a halftone mask is used to pattern the first color resist film, the second color resist film, and the third color resist film, as follows:

[0088] refer to Figure 7b-1 and Figure 7b-2 As shown, a substrate 10 is provided. The substrate 10 may be made of materials such as glass, quartz, silicon, acrylic, or polycarbonate. The substrate 10 may also be a flexible substrate. Suitable materials for flexible substrates include, for example, polyethersulfone (PES), polyethylene naphthalate (PEN), polyethylene (PE), polyimide (PI), polyvinyl chloride (PVC), polyethylene terephthalate (PET), or combinations thereof.

[0089] like Figure 16aAs shown, a first color resist material film is formed on a substrate 10. A first halftone mask 1 is used to pattern the first color resist material film and form a first color resist layer 11. The patterning process includes exposing the first color resist material film to the first halftone mask 1, followed by development, to form a pattern corresponding to the first halftone mask 1. The first color resist layer 11 corresponds to the first pixel unit P1 and at least part of the light-shielding area 120. The thickness of the first color resist layer 11 within the light-shielding area 120 is less than the thickness within the first pixel unit P1. In this embodiment, refer to... Figure 3 The first color resist layer 11 covers the first pixel unit P1, the first overlapping area C1, and the second overlapping area C2, meaning the first color resist layer 11 has a first opening corresponding to the second pixel unit P2, the third pixel unit P3, and the third overlapping area C3. The first halftone mask 1 has a light-transmitting area corresponding to the first opening, a semi-light-transmitting area corresponding to the first overlapping area C1 and the second overlapping area C2, and a light-blocking area corresponding to the first pixel unit P1.

[0090] The patterned first color resist layer 11 is cured (e.g., baked).

[0091] like Figure 16b As shown, a third color resist material film is formed on the substrate 10. A third halftone mask 3 is used to pattern the third color resist material film and form a third color resist layer 13. The patterning process includes exposing the third color resist material film to the third halftone mask 3, followed by development, to form a pattern corresponding to the third halftone mask 3. The third color resist layer 13 corresponds at least to the third pixel unit P3 and at least part of the light-shielding area 120. The first color resist layer 11 and the third color resist layer 13 have overlapping portions in the light-shielding area 120. The thickness of the third color resist layer 13 in the light-shielding area 120 is less than the thickness in the third pixel unit P3. In this embodiment, refer to... Figure 5 The third color resist layer 13 covers the third pixel unit P3, the second overlapping area C2, and the third overlapping area C3. That is, the first color resist layer 11 is a block structure corresponding to the third pixel unit P3, the second overlapping area C2, and the third overlapping area C3. The first color resist layer 11 and the third color resist layer 13 overlap each other in the second overlapping area C2. The third halftone mask 3 has a light-transmitting area corresponding to the first pixel unit P1, the second pixel unit P2, and the first overlapping area C1, a semi-light-transmitting area corresponding to the second overlapping area C2 and the third overlapping area C3, and a light-blocking area corresponding to the third pixel unit P3.

[0092] The patterned third color resist layer 13 is cured (e.g., baked).

[0093] like Figure 16cAs shown, a second color resist material film is formed on the substrate 10. A second halftone mask 2 is used to pattern the second color resist material film and form a second color resist layer 12. The patterning process includes exposing the second color resist material film to the second halftone mask 2, followed by development, to form a pattern corresponding to the second halftone mask 2. The second color resist layer 12 corresponds to the second pixel unit P2 and at least a portion of the light-shielding area 120. The thickness of the second color resist layer 12 within the light-shielding area 120 is less than the thickness within the second pixel unit P2. The first color resist layer 11 and the second color resist layer 12 have overlapping portions within the light-shielding area 120. In this embodiment, refer to... Figure 4 The second color resist layer 12 covers the second pixel unit P2, the first overlapping area C1, and the third overlapping area C3. That is, the second color resist layer 12 has a second opening corresponding to the first pixel unit P1, the third pixel unit P3, and the second overlapping area C2. The first color resist layer 11 and the second color resist layer 12 overlap each other in the first overlapping area C1, and the second color resist layer 12 and the third color resist layer 13 overlap each other in the third overlapping area C3. The second halftone mask 2 has a light-transmitting area corresponding to the second opening, a semi-transparent area corresponding to the first overlapping area C1 and the third overlapping area C3, and a light-blocking area corresponding to the second pixel unit P2.

[0094] The patterned second color resist layer 12 is cured (e.g., baked).

[0095] Those skilled in the art should understand that the remaining structures and working principles of this embodiment are the same as those of Embodiment 1, and will not be repeated here.

[0096] [Example 3]

[0097] Figure 17 This is a schematic diagram of the cross-sectional structure of the color filter substrate in Embodiment 3 of the present invention. Figure 18 This is a schematic diagram of the planar structure of the color filter substrate in Embodiment 3 of the present invention. For example... Figure 17 and Figure 18 As shown, the color filter substrate and manufacturing method provided in Embodiment 3 of the present invention are the same as those in Embodiment 1. Figures 1 to 15 Example 2 Figures 16a to 16c The color filter substrate and manufacturing method are basically the same as those in the previous embodiment, except that in this embodiment:

[0098] The color filter substrate has a border area 130 on its outer periphery, which is covered by a light-transmitting area 110 and a light-shielding area 120. The light-transmitting area 110 within the border area 130 is located around the light-shielding area 120. Since a cover plate is also required for the display panel when the color filter substrate is made into a display panel, and the cover plate has light-shielding ink applied to the border area 130, the color filter substrate only needs to designate the area near the edge of the display area as the light-shielding area 120 in the border area 130. Of course, in other embodiments, the border area 130 is always covered by the light-shielding area 120, which, combined with the light-shielding ink on the cover plate, can improve the light-shielding effect.

[0099] Those skilled in the art should understand that the remaining structures and working principles of this embodiment are the same as those of Embodiment 1 and Embodiment 2, and will not be repeated here.

[0100] [Example 4]

[0101] Figure 19 This is a schematic diagram of the planar structure of the color filter substrate in Embodiment 4 of the present invention. Figure 19 As shown, the color filter substrate and manufacturing method provided in Embodiment 4 of the present invention are the same as those in Embodiment 1. Figures 1 to 15 Example 2 Figures 16a to 16c Example 3 Figure 17 and Figure 18 The color filter substrate and manufacturing method are basically the same as those in the previous embodiment, except that in this embodiment:

[0102] The first overlapping region C1 consists of three overlapping layers of color resist: the first color resist layer 11, the second color resist layer 12, and the third color resist layer 13. The second overlapping region C2 consists of the first color resist layer 11 and the third color resist layer 13 overlapping each other. The third overlapping region C3 consists of the second color resist layer 12 and the third color resist layer 13 overlapping each other.

[0103] Those skilled in the art should understand that the remaining structures and working principles of this embodiment are the same as those of Embodiment 1, Embodiment 2, and Embodiment 3, and will not be repeated here.

[0104] Figure 20 This is a schematic diagram of the display device in the dark state in this invention. Figure 21 This is a schematic diagram of the display device in the present invention in the illuminated state. (See attached diagram.) Figure 20 and Figure 21 As shown, this application also provides a display panel, including an array substrate 20, a color filter substrate disposed opposite to the array substrate 20, and a liquid crystal layer 30 located between the array substrate 20 and the color filter substrate. The color filter substrate is the color filter substrate described above.

[0105] The liquid crystal layer 30 uses positive liquid crystal molecules, that is, liquid crystal molecules with positive dielectric anisotropy, such as... Figure 20As shown, in the initial state, the positive liquid crystal molecules in the liquid crystal layer 30 are aligned parallel to the color filter substrate and the array substrate 20, and the alignment direction of the positive liquid crystal molecules near the color filter substrate is opposite to that of the positive liquid crystal molecules near the array substrate 20. Of course, in other embodiments, the liquid crystal layer 30 can also use negative liquid crystal molecules, and the negative liquid crystal molecules in the liquid crystal layer 30 can be aligned perpendicular to the color filter substrate and the array substrate 20, that is, similar to the alignment method of VA display mode.

[0106] The array substrate 20 has multiple pixel units defined by multiple scan lines and multiple data lines that are mutually insulated and intersecting on the side facing the liquid crystal layer 30. The light-shielding area 120 corresponds vertically to the scan lines, data lines, and thin-film transistors. Each pixel unit has a pixel electrode 22 and a thin-film transistor. The pixel electrode 22 is electrically connected to the data line of the adjacent thin-film transistor through the thin-film transistor. The thin-film transistor includes a gate, an active layer, a drain, and a source. The gate and the scan line are located on the same layer and are electrically connected. The gate and the active layer are isolated by an insulating layer. The source is electrically connected to the data line, and the drain is electrically connected to the pixel electrode 22 through a contact hole.

[0107] In this embodiment, a common electrode 21 is further provided on the side of the array substrate 20 facing the liquid crystal layer 30. The common electrode 21 and the pixel electrode 22 are located on different layers and are insulated from each other by an insulating layer. The common electrode 21 may be located above or below the pixel electrode 22. Figure 20 The diagram shows the common electrode 21 located above the pixel electrode 22. Preferably, the common electrode 21 is disposed across the entire surface and has a slit in the pixel unit region, while the pixel electrode 22 is a slit electrode with multiple electrode strips in each pixel unit, to form a fringe field switching (FFS) mode. Of course, in other embodiments, the pixel electrode 22 and the common electrode 21 are located on the same layer, but they are insulated from each other. Both the pixel electrode 22 and the common electrode 21 may include multiple electrode strips, and the electrode strips of the pixel electrode 22 and the common electrode 21 are arranged alternately to form an in-plane switching (IPS) mode. Alternatively, the array substrate 20 has the pixel electrode 22 on the side facing the liquid crystal layer 30, and the color filter substrate has the common electrode 21 on the side facing the liquid crystal layer 30 to form a TN mode or a VA mode. For further descriptions of the TN mode and VA mode, please refer to the prior art, which will not be repeated here.

[0108] Furthermore, a sealant 40 is provided between the color filter substrate and the array substrate 20. The sealant 40 is located in the edge border area 130, and gold balls (SP) are disposed within the sealant 40. The border area 130 is covered by the light-shielding area 120. Since the border area 130 uses multilayer color resist stacking, the height of the border area protruding relative to the display area is h1, the height of the sealant 40 is h2, and the distance between the color filter substrate and the array substrate 20 in the display area is d. For example, when h1 is 1µm and d is 3µm, the height h2 of the sealant 40 is 2.0µm. When h1 is 1µm, the height h2 of the sealant 40 is 3.5µm. The effective phase retardation of the liquid crystal layer 30 can be between 310 and 370 nm, corresponding to a refractive index difference Δn of the liquid crystal preferably in the range of 0.068 to 0.08, but not limited to this. The liquid crystal layer 30 can use negative liquid crystal molecules or positive liquid crystal molecules.

[0109] Furthermore, an upper polarizer 51 is provided on the side of the color filter substrate away from the liquid crystal layer 30, and a lower polarizer 52 is provided on the side of the array substrate 20 away from the liquid crystal layer 30. The light transmission axis of the upper polarizer 51 and the light transmission axis of the lower polarizer 52 are perpendicular to each other.

[0110] The present invention also provides a display device, a display panel and a backlight module 60, wherein the backlight module 60 is located below the display panel and is used to provide a backlight source for the display panel.

[0111] The backlight module 60 can be an edge-lit backlight module or a direct-lit backlight module. Preferably, the backlight module 60 adopts a collimated backlight (CBL) mode, which can collect light and ensure display effect.

[0112] In this document, the directional terms such as up, down, left, right, front, and back are defined according to the position of the structures in the accompanying drawings and the relative positions of the structures, and are only used for clarity and convenience in expressing the technical solution. It should be understood that the use of these directional terms should not limit the scope of protection claimed in this application. It should also be understood that the terms "first" and "second," etc., used herein are only used for distinction in name and are not used to limit the number or order.

[0113] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content without departing from the scope of the technical solution of the present invention, which are equivalent embodiments with equivalent changes. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the technical solution of the present invention shall still fall within the protection scope of the technical solution of the present invention.

Claims

1. A method for manufacturing a color filter substrate, characterized in that, The color filter substrate has a light-transmitting area (110) and a light-blocking area (120) that separates the plurality of light-transmitting areas (110) from each other. The light-transmitting areas (110) contain a first pixel unit (P1), a second pixel unit (P2), and a third pixel unit (P3) of different colors. The manufacturing method includes: Provide substrate (10); A first color resist material film is formed on the substrate (10), the first color resist material film is patterned and a first color resist layer (11) is formed, the first color resist layer (11) corresponds to the first pixel unit (P1) and at least part of the light-shielding area (120), the first color resist layer (11) has a first thinning groove (111) penetrating the first color resist layer (11) in the light-shielding area (120); the patterned first color resist layer (11) is cured, before the first color resist layer (11) is cured, the first color resist material near the first thinning groove (111) flows toward the first thinning groove (111) and covers the first thinning groove (111); A second color resist material film is formed on the substrate (10), the second color resist material film is patterned and a second color resist layer (12) is formed, the second color resist layer (12) corresponds to the second pixel unit (P2) and at least part of the light-shielding area (120), the first color resist layer (11) and the second color resist layer (12) have overlapping portions in the light-shielding area (120); the patterned second color resist layer (12) is cured. A third color resist material film is formed on the substrate (10), the third color resist material film is patterned and a third color resist layer (13) is formed, the third color resist layer (13) corresponds at least to the third pixel unit (P3); the patterned third color resist layer (13) is cured.

2. The method for manufacturing a color filter substrate according to claim 1, characterized in that, The second color resist layer (12) has a second thinning groove (121) that penetrates the second color resist layer (12) in the light-shielding area (120). Before the second color resist layer (12) is cured, the second color resist material near the second thinning groove (121) flows toward the second thinning groove (121) and covers the second thinning groove (121).

3. The method for manufacturing a color filter substrate according to claim 1, characterized in that, The third color resist layer (13) corresponds to at least a portion of the light-shielding area (120). The third color resist layer (13) has a third thinning groove (131) penetrating the light-shielding area (120). Before the third color resist layer (13) is cured, the third color resist material near the third thinning groove (131) flows toward the third thinning groove (131) and covers the third thinning groove (131).

4. The method for manufacturing a color filter substrate according to claim 3, characterized in that, The light-shielding area (120) has a first overlapping area (C1), a second overlapping area (C2), and a third overlapping area (C3). The first overlapping area (C1) is located at the edge of the color filter substrate, between two rows of pixel units (P), and between an adjacent column of first pixel units (P1) and a column of second pixel units (P2). The second overlapping area (C2) is located between an adjacent column of first pixel units (P1) and a column of third pixel units (P3). The third overlapping area (C3) is located between an adjacent column of second pixel units (P2) and a column of third pixel units (P3). The first overlapping region (C1) is formed by at least the first color resist layer (11) and the second color resist layer (12) overlapping each other; the second overlapping region (C2) is formed by at least the first color resist layer (11) and the third color resist layer (13) overlapping each other; and the third overlapping region (C3) is formed by at least the second color resist layer (12) and the third color resist layer (13) overlapping each other.

5. The method for manufacturing a color filter substrate according to any one of claims 1-4, characterized in that, The planar shape of the thinning groove is at least one of the following: rectangular, trapezoidal, triangular, circular, and annular. The density and / or size of the thinning grooves in the color resist layer gradually increase towards the edge of the color resist layer; The projections of the thinning trenches in the overlapping color resist layers onto the substrate (10) are staggered. The thinning groove includes one or more combinations of a first thinning groove, a second thinning groove, and a third thinning groove.

6. The method for manufacturing a color filter substrate according to claim 1, characterized in that, The first color resist layer (11) and the second color resist layer (12) completely cover the light-shielding area (120), and the light-shielding area (120) is formed by the first color resist layer (11) and the second color resist layer (12) overlapping each other; The first color resist film, the second color resist film and the third color resist film are each a red color resist film, a blue color resist film and a green color resist film, respectively. The outer periphery of the color filter substrate has a border area (130), which is covered by the light-shielding area (120); or the border area (130) is covered by both the light-transmitting area (110) and the light-shielding area (120), and the light-transmitting area (110) within the border area (130) is located on the outer periphery of the light-shielding area (120).

7. A color filter substrate, characterized in that, It is manufactured using the method for manufacturing a color filter substrate as described in any one of claims 1-6.

8. A display device, characterized in that, Includes the color filter substrate as described in claim 7.

Images