A hole repair method for perovskite solar cells and its application

Abstract

The present invention discloses a method and application for repairing holes in perovskite solar cells, and relates to the field of perovskite cell technology. The hole repair method comprises: performing a first post-treatment on the perovskite solution coated on the surface of the first transmission layer to remove the low-boiling-point solvent to form a perovskite wet film; analyzing the composition and ratio of the solute and solvent in the perovskite wet film to prepare a perovskite repair solution; using automated detection equipment to identify holes on the perovskite wet film, forming a 3D map, simulating and calculating the amount of perovskite repair solution required based on the size of the hole, and dripping a fixed amount of perovskite repair solution into the hole; after the hole is repaired, performing a second post-treatment on the perovskite wet film to form a perovskite dry film. This method can effectively repair the perovskite layer while having little impact on the non-repaired area, which is beneficial to improving the performance and stability of the battery.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite cells, and in particular to a method and application of repairing holes in perovskite solar cells. Background Art

[0002] Perovskite materials are neither calcium nor titanium, but rather a general term for a class of "ceramic oxides" with a common crystal structure. Their molecular formula is ABX3, where A represents a "large-radius cation," B represents a "metal cation," and X represents a "halogen anion." These three ions, through the arrangement and combination of different elements or by adjusting their distances, can exhibit a host of remarkable physical properties, including but not limited to insulation, ferroelectricity, antiferromagnetism, and giant magnetic effects. As one of the most promising new materials, perovskites can serve as the active layer of solar cells. They possess numerous excellent optoelectronic properties, including adjustable band gaps, high absorption coefficients, low exciton binding energies, high carrier mobility, and high defect tolerance. Furthermore, their simple preparation process allows them to be semi-transparent, ultra-lightweight, ultra-thin, and flexible. Perovskite raw materials are widely available and abundant. These advantages make perovskite solar cells a next-generation technology that will revolutionize crystalline silicon and thin-film solar cells.

[0003] At present, the perovskite light-absorbing layer of perovskite solar cells is commonly prepared by solution methods, such as blade coating, slit coating, inkjet printing, spin coating or micro-concave coating. A layer of perovskite solution is first coated on the surface of the transport layer 1. The perovskite solution is first post-treated using an air knife or VCD (vacuum concentrate drying) flash evaporation process to remove most of the low-boiling point solvents in the perovskite solution to form a perovskite wet film (a large number of crystal nuclei). A small amount of low-boiling point solvent and most of the high-boiling point solvent are retained in the wet film. The perovskite wet film is then heated and annealed at high temperature (100-150°) for a second post-treatment to remove a small amount of low-boiling point solvent and a large amount of high-boiling point solvent. Small crystal nuclei grow into large grains, eventually forming a perovskite dry film. The transport layer 2, buffer layer, and electrode are then sequentially prepared on the surface of the perovskite dry film layer to form a complete perovskite solar cell.

[0004] However, due to the presence of dust or film defects on the surface of the transport layer 1, the local wettability of the surface is poor. After the perovskite solution is coated on the surface, during the first and second post-processing processes, the solution will shrink and form holes. At this time, the transport layer 1 and the transport layer 2 are in direct contact, affecting the battery performance (efficiency, current density, open circuit voltage, fill factor, etc.) and battery stability.

[0005] In view of this, the present invention is proposed. Summary of the Invention

[0006] The purpose of the present invention is to provide a method and application for repairing holes in perovskite solar cells.

[0007] The present invention is achieved in that:

[0008] In a first aspect, the present invention provides a method for repairing holes in a perovskite solar cell, comprising:

[0009] performing a first post-treatment on the perovskite solution coated on the surface of the transport layer to remove the low-boiling-point solvent and form a perovskite wet film;

[0010] Analyzing the composition and ratio of the solute and solvent in the perovskite wet film to prepare a perovskite repair solution;

[0011] An automated detection device is used to identify the holes on the perovskite wet film to form a 3D map. The amount of perovskite repair solution required is simulated and calculated according to the size of the hole. A fixed amount of the perovskite repair solution is added to the hole. The perovskite repair solution erodes the surrounding area of ​​the hole to form a transition zone. The transition zone and the hole area serve as the repair zone.

[0012] After the holes are repaired, the perovskite wet film is subjected to a second post-processing to form a perovskite dry film.

[0013] In an optional embodiment, the method for analyzing the composition and ratio of the solute and solvent in the perovskite wet film includes gravimetric analysis, spectrophotometry, titration or colorimetry.

[0014] In an optional embodiment, the composition of the perovskite solution includes, by mass percentage, 40% to 60% solute, 30% to 55% low boiling point solvent, and 5% to 10% high boiling point solvent;

[0015] Preferably, the solute includes at least one of PbI2, PbBr2, MaI and CsI;

[0016] Preferably, the low boiling point solvent comprises at least one of DMF and acetonitrile;

[0017] Preferably, the high boiling point solvent includes at least one of DMSO, NMP and DMPU.

[0018] In an optional embodiment, the solute in the composition of the perovskite repair solution remains unchanged from the solute in the perovskite solution, and the volume ratio of the low boiling point solvent to the high boiling point solvent in the perovskite repair solution is 1:(15-500).

[0019] In an optional embodiment, an ionic liquid additive is further added to the perovskite repair solution, and the amount of the ionic liquid additive added accounts for 0.01 to 0.1% of the mass of the perovskite repair solution;

[0020] Preferably, the ionic liquid additive includes at least one of 1,3-bis(cyanomethyl)imidazole chloride, 2-(2-(2-aminoethoxy)ethoxy)acetic acid and 3-chlorobenzylamine.

[0021] In an optional embodiment, a self-repairing material is further added to the perovskite repair solution, and the amount of the self-repairing material added accounts for 0.01 to 0.2% of the mass of the perovskite repair solution;

[0022] Preferably, the self-healing material comprises phenylhydrazine hydrochloride.

[0023] In an optional embodiment, after the perovskite repair solution is added, the repair area is treated with gas;

[0024] Preferably, the first post-treatment comprises performing the first post-treatment for 10 to 90 seconds using an air knife or VCD flash evaporation;

[0025] Preferably, the second post-treatment includes high temperature annealing at 100-150° C. for 10-40 min.

[0026] In a second aspect, the present invention provides an application of the hole repair method of a perovskite solar cell as described in any one of the above embodiments in the preparation of a perovskite solar cell.

[0027] In a third aspect, the present invention provides a method for preparing a perovskite solar cell, comprising: depositing a transparent conductive layer on a substrate, depositing a first transmission layer on the transparent conductive layer, coating a perovskite solution on the first transmission layer, and then repairing the perovskite layer according to the hole repair method of the perovskite solar cell described in any of the aforementioned embodiments. After the repair is completed, a second transmission layer, a buffer layer and an electrode are sequentially deposited on the surface of the perovskite dry film.

[0028] In a fourth aspect, the present invention provides a perovskite solar cell, which is prepared using the method for preparing a perovskite solar cell as described in the above embodiment.

[0029] The present invention has the following beneficial effects:

[0030] The hole repair method of the perovskite solar cell provided by the present invention is repaired on wet film, rather than repaired on perovskite dry film, the present invention is analyzed by the composition and ratio of the solute and solvent in wet film, and prepares a perovskite repair fluid with similar composition, the perovskite repair fluid is used to repair the hole, because the perovskite repair fluid concentration is higher, the solvent is less, but it still erodes the hole peripheral area, forms a transition zone, is conducive to connecting the repair area and the non-repair area, avoids the occurrence of a split phenomenon, in addition, in the present invention, it is repaired on wet film, rather than because the surface of the wet film still retains a part of the solvent, therefore when the perovskite repair fluid is added dropwise in the hole, the diffusion of the perovskite repair fluid is slower, and its impact on the perovskite wet film is smaller. If directly perovskite repair fluid is added dropwise to the surface of dry film, now perovskite repair fluid is rapidly diffused on the surface of dry film, and the damage caused to dry film is larger. Therefore, the hole repair method of the perovskite solar cell provided by the present invention can effectively repair the perovskite layer, while having less impact on the non-repair area. In the process of preparing perovskite solar cells, the above-mentioned hole repair method of perovskite solar cells is used to improve the performance and stability of the cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0032] Figure 1 A process flow chart of a method for repairing holes in a perovskite solar cell according to Example 1 of the present invention;

[0033] Figure 2 A schematic diagram of the step (1) of applying the perovskite solution in the hole repair method of the perovskite solar cell provided in Example 1 of the present invention;

[0034] Figure 3 A schematic diagram of forming a perovskite wet film in step (1) of the hole repair method for a perovskite solar cell provided in Example 1 of the present invention;

[0035] Figure 4 A schematic diagram of holes on the surface of the perovskite wet film in step (3) of the hole repair method for the perovskite solar cell provided in Example 1 of the present invention;

[0036] Figure 5 A schematic diagram of the hole repairing method for a perovskite solar cell provided in Example 1 of the present invention after the perovskite repairing liquid is added to the hole on the surface of the perovskite wet film in step (3);

[0037] Figure 6 A schematic structural diagram of the method for repairing holes in a perovskite solar cell provided in Example 1 of the present invention, wherein step (4) forms a perovskite dry film and then continues to deposit a second transmission layer, a buffer layer, and an electrode;

[0038] Figure 7 This is a process flow chart of the hole repair method for perovskite solar cells provided in Example 6 of the present invention.

[0039] Icons: 100-perovskite solar cell; 110-substrate; 120-transparent conductive layer; 130-first transmission layer; 141-perovskite solution; 142-perovskite wet film; 143-hole; 144-repair area; 145-perovskite dry film; 150-second transmission layer; 160-buffer layer; 170-electrode. DETAILED DESCRIPTION

[0040] To make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention are described clearly and completely below. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer are used. Where the manufacturer of the reagents or instruments is not specified, all are conventional products that can be purchased commercially.

[0041] See also Figures 1-6 The present invention provides a method for repairing holes in a perovskite solar cell, which comprises the following steps:

[0042] (1) The perovskite solution 141 coated on the surface of the first transport layer 130 is subjected to a first post-treatment to remove the low-boiling-point solvent, thereby forming a perovskite wet film 142 .

[0043] In the present invention, the components of the perovskite solution 141 include, by mass percentage, 40% to 60% solute, 30% to 55% low-boiling-point solvent, and 5% to 10% high-boiling-point solvent; wherein the solute includes but is not limited to at least one of PbI2, PbBr2, MaI, and CsI; the low-boiling-point solvent includes but is not limited to at least one of DMF and acetonitrile; and the high-boiling-point solvent includes but is not limited to at least one of DMSO, NMP, and DMPU.

[0044] The first post-treatment includes the use of air knife or VCD flash evaporation for the first post-treatment for 10 to 90 seconds.

[0045] In the present invention, most of the low-boiling-point solvent in the perovskite solution 141 can be removed through the first post-treatment. At this time, a large number of crystal nuclei exist in the perovskite wet film 142, and a small amount of low-boiling-point solvent and most of the high-boiling-point solvent are retained in the wet film.

[0046] (2) Analyze the composition and ratio of the solute and solvent in the perovskite wet film 142 and prepare a perovskite repair solution.

[0047] Methods for analyzing the composition and ratio of the solute and solvent in the perovskite wet film 142 include gravimetric analysis, spectrophotometry, titration or colorimetry. Through the above analysis, the composition and ratio of the solute and solvent in the perovskite wet film 142 can be determined, and then a perovskite repair solution with similar composition and ratio can be prepared.

[0048] Specifically, the solute in the perovskite repair solution remains unchanged from the solute in the perovskite solution 141, and the volume ratio of the low-boiling point solvent to the high-boiling point solvent in the perovskite repair solution is 1:(15-500), preferably 1:15-30. The mass percentage of the solute in the perovskite repair solution is approximately 75-85%, and the total mass percentage of the low-boiling point solvent and the high-boiling point solvent is approximately 15-25%.

[0049] In addition, on the basis of maintaining the above-mentioned solutes and solvents, an ionic liquid additive can be added to the perovskite repair solution, and the amount of the ionic liquid additive added accounts for 0.01~0.1% of the mass of the perovskite repair solution; preferably, the ionic liquid additive includes at least one of 1,3-bis(cyanomethyl)imidazole chloride, 2-(2-(2-aminoethoxy)ethoxy)acetic acid and 3-chlorobenzylamine.

[0050] In some other embodiments, a self-repairing material is further added to the perovskite repair solution, and the amount of the self-repairing material added accounts for 0.01-0.2% of the mass of the perovskite repair solution; preferably, the self-repairing material includes phenylhydrazine hydrochloride.

[0051] The addition of ionic liquid additives and self-healing materials is beneficial to delaying crystallization, passivating interfaces and grain boundaries, thereby achieving self-healing, further reducing the occurrence of holes 143, and improving battery performance and stability.

[0052] (3) An automated detection device is used to identify the holes 143 on the perovskite wet film 142 to form a 3D image. The amount of perovskite repair liquid required is simulated and calculated based on the size of the holes 143. A certain amount of perovskite repair liquid is added to the holes 143. The perovskite repair liquid erodes the surrounding area of ​​the holes 143 to form a transition zone. The transition zone and the area of ​​the holes 143 together serve as the repair zone 144.

[0053] The automatic hole 143 identification device can identify the hole 143 on the perovskite wet film 142, and then use the software algorithm to simulate the shape of the hole 143 and calculate the volume of the hole 143. The dripping device sets the required volume of the repair liquid and drips the repair liquid on the hole 143. Figure 7After adding the perovskite repair liquid, the repair area 144 is treated with gas; by treating the repair area 144 with gas, the low-boiling point solvent in the local area of ​​the repair area 144 can be volatilized, keeping the repair area 144 consistent with the process of other areas, reducing differences, forming a uniform film, and further improving the performance and stability of the battery.

[0054] In addition, in the present invention, the perovskite repair liquid corrodes the surrounding area of ​​the hole 143 to form a transition zone, which is conducive to connecting the repair area 144 with the non-repair area to avoid the occurrence of splitting. At the same time, the area of ​​the repair area 144 in the present invention is larger than the area of ​​the hole 143 area.

[0055] (4) After the hole 143 is repaired, the perovskite wet film 142 is subjected to a second post-processing to form a perovskite dry film 145.

[0056] The second post-treatment includes high temperature annealing at 100-150°C for 10-40 minutes.

[0057] The present invention uses the above-mentioned hole repair method for perovskite solar cells to effectively repair the perovskite layer. In addition, the present invention performs repair on the wet film rather than the dry perovskite film 145. Since the surface of the wet film still retains a portion of the solvent, when the perovskite repair liquid is added to the hole 143, the perovskite repair liquid diffuses slowly and has little impact on the wet perovskite film 142. If the perovskite repair liquid is directly added to the surface of the dry film, the perovskite repair liquid will diffuse rapidly on the surface of the dry film, causing greater damage to the dry film.

[0058] The hole repair method of the perovskite solar cell provided by the present invention can be widely used in the preparation of the perovskite solar cell 100.

[0059] For example, the present invention provides a method for preparing a perovskite solar cell 100, which includes: depositing a transparent conductive layer 120 on a substrate 110, depositing a first transmission layer 130 on the transparent conductive layer 120, coating a perovskite solution 141 on the first transmission layer 130, and then repairing the perovskite layer according to the above-mentioned hole repair method of the perovskite solar cell. After the repair is completed, a second transmission layer 150, a buffer layer 160 and an electrode 170 are sequentially deposited on the surface of the perovskite dry film 145.

[0060] Furthermore, the present invention provides a perovskite solar cell 100, which is manufactured using the aforementioned method for manufacturing a perovskite solar cell 100. The perovskite solar cell 100 of the present invention can repair the holes 143 in the perovskite layer, preventing direct contact between the first transmission layer 130 and the second transmission layer 150, thereby significantly improving the performance and stability of the cell.

[0061] The features and performance of the present invention are further described in detail below with reference to the embodiments.

[0062] Example 1

[0063] This embodiment provides a method for repairing holes in a perovskite solar cell, which includes:

[0064] (1) A layer of perovskite solution 141 (such as Figure 2 As shown), the coating amount of the perovskite solution 141 is 50ul, and the components of the perovskite solution 141 include 50% solute, 44% low boiling point solvent and 6% high boiling point solvent by mass percentage, wherein the solute is CsI, PbI2, FAI, PbBr2 and MACl with a mass ratio of 1:1:1:1, the low boiling point solvent is DMF, and the high boiling point solvent is DMSO and NMP with a mass ratio of 1:1; after the coating is completed, the first post-treatment is performed with an air knife for 40s. The first post-treatment can remove most of the low boiling point solvent to form a perovskite wet film 142 (as shown Figure 3 shown).

[0065] (2) Scrape a small amount of the wet film, weigh the wet film, and place it in a thermogravimetric device. After heating, the material volatilizes to different degrees at different time periods and temperatures. Weigh the wet film at different times to determine the weight of the low-boiling-point solvent and the high-boiling-point solvent. The remainder is the weight of the solute. The composition and ratio of the solute and solvent in the perovskite wet film 142 are analyzed using the above analysis method, and a perovskite repair solution is prepared. The perovskite repair solution includes 80% solute, 1% low-boiling-point solvent, and 19% high-boiling-point solvent by mass.

[0066] (3) Using automated detection equipment to identify holes 143 on the perovskite wet film 142 (e.g. Figure 4 As shown in FIG, a 3D image is formed, and the amount of perovskite repair liquid required is calculated according to the size of the hole 143. A certain amount of perovskite repair liquid is added to the hole 143. The perovskite repair liquid erodes the surrounding area of ​​the hole 143 to form a transition zone. The transition zone and the area of ​​the hole 143 together serve as the repair zone 144 (as shown in FIG. Figure 5 shown).

[0067] (4) After the holes 143 are repaired, the perovskite wet film 142 is subjected to a second post-treatment at 120°C for 20 minutes to form a perovskite dry film 145 (e.g. Figure 6 shown).

[0068] Example 2

[0069] This embodiment is basically the same as Example 1, except that, in this embodiment, the components of the perovskite solution 141 include, by mass percentage, 50% solute, 42% low-boiling-point solvent, and 8% high-boiling-point solvent, wherein the solute is CsI, PbI2, FAI, PbBr2, and MACl in a mass ratio of 1:1:1:1, the low-boiling-point solvent is DMF, and the high-boiling-point solvent is DMSO and NMP in a mass ratio of 1:1.

[0070] The perovskite repair solution includes 80% solute, 0.9% low boiling point solvent and 19.1% high boiling point solvent by mass percentage.

[0071] Example 3

[0072] This embodiment is basically the same as Example 1, except that, in this embodiment, the components of the perovskite solution 141 include, by mass percentage, 50% solute, 40% low-boiling-point solvent, and 10% high-boiling-point solvent, wherein the solute is CsI, PbI2, FAI, PbBr2, and MACl in a mass ratio of 1:1:1:1, the low-boiling-point solvent is DMF, and the high-boiling-point solvent is DMSO and NMP in a mass ratio of 1:1.

[0073] The perovskite repair solution includes 80% solute, 0.7% low boiling point solvent and 19.3% high boiling point solvent by mass percentage.

[0074] Example 4

[0075] This embodiment is basically the same as Example 1, except that 0.05% of the ionic liquid additive 1,3-bis(cyanomethyl)imidazole chloride is further added to the perovskite repair solution.

[0076] Example 5

[0077] This embodiment is basically the same as Example 1, except that 0.05% of the self-repairing material phenylhydrazine hydrochloride is also added to the perovskite repair solution.

[0078] Example 6

[0079] This embodiment is basically the same as embodiment 1, except that an automated detection device is used to identify the holes 143 on the perovskite wet film 142, forming a 3D map, and the amount of perovskite repair liquid required is simulated and calculated according to the size of the holes 143. A certain amount of perovskite repair liquid is added to the holes 143, and the perovskite repair liquid erodes the surrounding area of ​​the holes 143 to form a transition zone. The transition zone and the area of ​​the holes 143 together serve as the repair zone 144. Figure 7 As shown, the repair area 144 is treated with an air gun, so that the low-boiling point solvent in the repair area 144 evaporates, keeping the repair area 144 consistent with the process of other areas, reducing differences, and forming a uniform film.

[0080] Comparative Example 1

[0081] In this comparative example, the perovskite wet film 142 is not repaired, and steps (2) and (3) of Example 1 are omitted. The perovskite wet film 142 is directly subjected to a second post-treatment to obtain a perovskite dry film 145 .

[0082] Comparative Example 2

[0083] This comparative example is substantially the same as Example 1, except that the composition of the perovskite repair solution used in step (2) of this comparative example is exactly the same as that of the perovskite solution 141 .

[0084] Comparative Example 3

[0085] This comparative example is basically the same as Example 1, except that the perovskite repair solution used in step (2) of this comparative example comprises tetramethylene sulfoxide as a ligand solvent, anisole as a non-ligand solvent, and the volume ratio of the ligand solvent to the non-ligand solvent is 0.2:1.

[0086] Comparative Example 4

[0087] This comparative example is basically the same as Example 1, except that the perovskite repairing liquid in step (2) of Example 1 is used as the repairing liquid in this comparative example to repair the surface of the perovskite dry film 145. Specifically, it includes:

[0088] (1) A layer of perovskite solution 141 (such as Figure 2 As shown), the coating amount of the perovskite solution 141 is 50ul, and the components of the perovskite solution 141 include, by mass percentage, 50% solute, 44% low-boiling-point solvent, and 6% high-boiling-point solvent, wherein the solute is CsI, PbI2, FAI, PbBr2, and MACl in a mass ratio of 1:1:1:1, the low-boiling-point solvent is DMF, and the high-boiling-point solvent is DMSO and NMP in a mass ratio of 1:1; after the coating is completed, a first post-treatment is performed with an air knife for 40s. The first post-treatment can remove most of the low-boiling-point solvent to form a perovskite wet film 142.

[0089] (2) The perovskite wet film 142 is subjected to a second post-treatment at 100-150° C. for 20 min to form a perovskite dry film 145 .

[0090] (3) An automated detection device is used to identify the hole 143 on the perovskite dry film 145 to form a 3D image. The amount of perovskite repair liquid required is simulated and calculated based on the size of the hole 143. A certain amount of the perovskite repair liquid in Example 1 is added to the hole 143. The perovskite repair liquid erodes the surrounding area of ​​the hole 143 to form a transition zone. The transition zone and the area of ​​the hole 143 together serve as the repair area 144.

[0091] Experimental Example 1

[0092] The photoelectric performance of the solar cells prepared in the above embodiments and comparative examples was tested, wherein the preparation method of the solar cell includes: depositing a transparent conductive layer 120 with a thickness of 150 nm on the substrate 110, depositing a first transmission layer 130 with a thickness of 130 nm on the transparent conductive layer 120, coating a perovskite solution 141 with a thickness of 150 μm on the first transmission layer 130, and then repairing the perovskite layer according to the above-mentioned hole repair method of the perovskite solar cell. After the repair is completed, a second transmission layer 150 with a thickness of 30 nm, a buffer layer 160 with a thickness of 20 nm, and an electrode 170 with a thickness of 100 nm are sequentially deposited on the surface of the perovskite dry film 145.

[0093]

[0094] Among them, the evaluation method for battery stability is: after continuous irradiation for 100 hours, the efficiency decay is less than 1%, which is evaluated as good; after continuous irradiation for 100 hours, the efficiency decay is between 1% and 2%, which is evaluated as fair; after continuous irradiation for 100 hours, the efficiency decay is greater than 2%, which is evaluated as poor.

[0095] As can be seen from the above table, the battery parameters and stability are the best when the holes are repaired on the wet film after the perovskite coating and the first air knife or VCD treatment. In Comparative Example 1, no repair is performed, and the battery parameters and stability at this time are the worst. In Comparative Example 2, the perovskite solution 141 is directly used for repair. At this time, the composition of the perovskite solution 141 has changed compared to the wet film, and its repair effect is poor, but slightly better than Comparative Example 1. In Comparative Example 3, other ingredients are used as repair liquid, and its repair effect is similar to that of Comparative Example 2, which is still significantly worse than Example 1. In Comparative Example 4, repair is performed on the dry film. At this time, the perovskite repair liquid diffuses rapidly on the surface of the dry film, causing greater damage to the dry film, resulting in poor battery parameters and stability.

[0096] In summary, the hole repair method of the perovskite solar cell provided by the present invention is repaired on the wet film instead of on the perovskite dry film 145. The present invention analyzes the composition and ratio of the solute and solvent in the wet film, and formulates a perovskite repair solution with similar composition. The perovskite repair solution is used to repair the hole 143. Since the concentration of the perovskite repair solution is high and the solvent is relatively small, it will still erode the area around the hole 143 to form a transition zone, which is conducive to connecting the repair area 144 with the non-repair area to avoid the occurrence of a cracking phenomenon. In addition, the present invention is repaired on the wet film. Since the surface of the wet film still retains a portion of the solvent, when the perovskite repair solution is added dropwise to the hole 143, the diffusion of the perovskite repair solution is slow, and its effect on the perovskite wet film 142 is small. If the perovskite repair solution is directly added dropwise to the surface of the dry film, the perovskite repair solution will diffuse rapidly on the surface of the dry film, causing greater damage to the dry film. Therefore, the hole repair method for a perovskite solar cell provided by the present invention can effectively repair the perovskite layer while having minimal impact on the non-repaired area. In the process of preparing the perovskite solar cell 100, the hole repair method for a perovskite solar cell described above can improve the performance and stability of the cell.

[0097] The foregoing description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention are intended to be within the scope of protection of the present invention.

Claims

1. A method for repairing holes in a perovskite solar cell, characterized in that: It includes: performing a first post-treatment on the perovskite solution coated on the surface of the first transport layer to remove the low-boiling-point solvent and form a perovskite wet film; Analyzing the composition and ratio of the solute and solvent in the perovskite wet film, and preparing a perovskite repair solution, wherein the solute in the composition of the perovskite repair solution is the same as the solute in the perovskite solution, the volume ratio of the low-boiling point solvent to the high-boiling point solvent in the perovskite repair solution is 1:(15-500), the mass percentage of the solute in the perovskite repair solution is 75-85%, and the total mass percentage of the low-boiling point solvent and the high-boiling point solvent is 15-25%; An automated detection device is used to identify the holes on the perovskite wet film to form a 3D map. The amount of perovskite repair solution required is simulated and calculated according to the size of the hole. A fixed amount of the perovskite repair solution is added to the hole. The perovskite repair solution erodes the surrounding area of ​​the hole to form a transition zone. The transition zone and the hole area serve as the repair zone. After the holes are repaired, the perovskite wet film is subjected to a second post-processing to form a perovskite dry film.

2. The method for repairing holes in a perovskite solar cell according to claim 1, wherein: Methods for analyzing the composition and ratio of the solute and solvent in the perovskite wet film include gravimetric analysis, spectrophotometry, titration or colorimetry.

3. The method for repairing holes in a perovskite solar cell according to claim 1, wherein: The perovskite solution comprises, by mass percentage, 40% to 60% of solute, 30% to 55% of low-boiling-point solvent, and 5% to 10% of high-boiling-point solvent.

4. The method for repairing holes in a perovskite solar cell according to claim 3, wherein: The solute includes at least one of PbI2, PbBr2, MaI and CsI.

5. The method for repairing holes in a perovskite solar cell according to claim 3, wherein: The low boiling point solvent includes at least one of DMF and acetonitrile.

6. The method for repairing holes in a perovskite solar cell according to claim 3, wherein: The high boiling point solvent includes at least one of DMSO, NMP and DMPU.

7. The method for repairing holes in a perovskite solar cell according to claim 1, wherein: An ionic liquid additive is further added to the perovskite repair liquid, and the amount of the ionic liquid additive added accounts for 0.01 to 0.1% of the mass of the perovskite repair liquid.

8. The method for repairing holes in a perovskite solar cell according to claim 7, wherein: The ionic liquid additive includes at least one of 1,3-bis(cyanomethyl)imidazole chloride, 2-(2-(2-aminoethoxy)ethoxy)acetic acid, and 3-chlorobenzylamine.

9. The method for repairing holes in a perovskite solar cell according to claim 1, wherein: A self-repairing material is further added to the perovskite repair liquid, and the amount of the self-repairing material added accounts for 0.01 to 0.2% of the mass of the perovskite repair liquid.

10. The method for repairing holes in a perovskite solar cell according to claim 9, wherein: The self-healing material includes phenylhydrazine hydrochloride.

11. The method for repairing holes in a perovskite solar cell according to claim 1, wherein: After the perovskite repair solution is added, the repair area is treated with gas.

12. The method for repairing holes in a perovskite solar cell according to claim 1, wherein: The first post-treatment includes using an air knife or VCD flash evaporation to perform the first post-treatment for 10 to 90 seconds.

13. The method for repairing holes in a perovskite solar cell according to claim 1, wherein: The second post-treatment includes high temperature annealing at 100-150° C. for 10-40 minutes.

14. Use of the hole repairing method of a perovskite solar cell according to any one of claims 1 to 13 in the preparation of a perovskite solar cell.

15. A method for preparing a perovskite solar cell, characterized in that: It includes: A transparent conductive layer is deposited on a substrate, a first transmission layer is deposited on the transparent conductive layer, a perovskite solution is coated on the first transmission layer, and then the perovskite layer is repaired according to the hole repair method for a perovskite solar cell according to any one of claims 1 to 13. After the repair is completed, a second transmission layer, a buffer layer and an electrode are sequentially deposited on the surface of the perovskite dry film.

16. A perovskite solar cell, characterized in that: It is prepared using the method for preparing a perovskite solar cell according to claim 15.

Images