Substrate processing apparatus, substrate processing method, and computer-readable storage medium

Abstract

The present invention relates to a substrate processing apparatus, a substrate processing method, and a computer-readable storage medium capable of processing a peripheral portion of a substrate with higher accuracy. The substrate processing apparatus includes: a rotation holding unit that holds and rotates a substrate; a processing liquid supply unit that supplies a processing liquid to the peripheral edge of the substrate; a heating unit that heats a region including a central portion of the substrate; a peripheral edge heating unit that heats a peripheral edge portion of the substrate; and a control unit. The control unit executes: a first process for controlling the rotation holding unit to rotate the substrate; a second process of controlling the processing liquid supply unit to supply the processing liquid to the peripheral edge portion of the rotating substrate; and a third process in which the heating unit and the peripheral edge heating unit are controlled at least during a period in which the processing liquid is supplied to the peripheral edge portion of the substrate, and a region including the central portion of the substrate and the peripheral edge portion of the substrate are heated such that the difference between the temperature of the region including the central portion of the substrate and the temperature of the peripheral edge portion of the substrate is within a predetermined range.

Description

Technical Field

[0001] The invention relates to a substrate processing device, a substrate processing method and a computer-readable storage medium. Background Art

[0002] Patent document 1 discloses a substrate processing device, which includes: a holding portion, which is configured to hold a substrate in a rotatable manner; a supply portion, which is configured to supply a processing liquid to the substrate held by the holding portion; and a heating portion, which is configured to supply heated nitrogen gas to the lower surface of the substrate to heat the substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-134000 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention describes a substrate processing device, a substrate processing method, and a computer-readable storage medium that can process the peripheral portion of a substrate with higher precision.

[0008] Technical solutions for solving technical problems

[0009] An example of a substrate processing device includes: a rotating holding part configured to hold and rotate a substrate; a processing liquid supplying part configured to supply processing liquid to the peripheral part of the substrate; a heating part configured to heat the region including the central part of the substrate; a peripheral heating part configured to heat the peripheral part of the substrate; and a control part. The control part is configured to perform: a first process of controlling the rotating holding part to rotate the substrate; a second process of controlling the processing liquid supplying part to supply processing liquid to the peripheral part of the rotating substrate; and a third process of controlling the heating part and the peripheral heating part to heat the region including the central part of the substrate and the peripheral part of the substrate at least during the supply of processing liquid to the peripheral part of the substrate, so that the temperature difference between the region including the central part of the substrate and the temperature of the peripheral part of the substrate is within a specified range.

[0010] Effects of the Invention

[0011] According to the substrate processing apparatus, substrate processing method and computer-readable storage medium of the present invention, the peripheral portion of the substrate can be processed with higher accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a top view schematically showing an example of a substrate processing system.

[0013] Figure 2 It is a side view schematically showing an example of a liquid processing unit.

[0014] Figure 3 It is mainly used to indicate Figure 2 Side view of the heating section.

[0015] Figure 4 Observed from above Figure 3 Diagram of the liquid handling unit.

[0016] Figure 5 This is a block diagram showing an example of the main parts of the substrate processing system.

[0017] Figure 6 This is a schematic diagram showing an example of the hardware configuration of the controller.

[0018] Figure 7 This is a flowchart for explaining an example of a processing flow of a substrate.

[0019] Figure 8 It is a cross-sectional view for explaining an example of a processing flow of a substrate.

[0020] Fig. 9 This is a diagram showing the temporal changes in the flow rate of each fluid, the temperature of the heating portion, and the temperature of the peripheral heating portion in an example of substrate processing.

[0021] Fig.10 The figure shows the change over time of the temperature at different positions of the substrate (positions 74 mm and 149 mm from the center of the substrate) in a substrate having a diameter of 300 mm.

[0022] Fig.11 This is a diagram showing another example of the liquid processing unit as viewed from above. DETAILED DESCRIPTION

[0023] In the following description, the same reference numerals are used for the same elements or elements having the same functions, and repeated descriptions are omitted. In addition, in this specification, when referring to the top, bottom, right, and left of a figure, the orientation of the reference numerals in the figure is used as a reference.

[0024] First, refer to Figure 1 , a substrate processing system 1 (substrate processing device) configured to process a substrate W is described. The substrate processing system 1 includes a feeding station 2, a processing station 3, and a controller Ctr (control unit). The feeding station 2 and the processing station 3 may be arranged in a row in the horizontal direction, for example.

[0025] The substrate W may be in the shape of a circular plate or a plate other than a circular plate such as a polygon. The substrate W may also have a cutout portion with a portion cut out. The cutout portion may be, for example, a notch (a U-shaped, V-shaped groove), or a straight portion extending in a straight line (the so-called orientation plane). The substrate W may also be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other substrates. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

[0026] The substrate W includes a central region Wa and a peripheral portion Wb. The central region Wa is a region including the central portion of the substrate W and not reaching the peripheral portion Wb. The peripheral portion Wb is a region including the outer periphery of the substrate W and having a predetermined width in the radial direction of the substrate W. The diameter of the central region Wa can be about 0 mm to 100 mm, and the width of the peripheral portion Wb in the radial direction can be about 100 mm to 150 mm.

[0027] The loading and unloading station 2 includes a loading section 4, a loading and unloading section 5, and a shelf unit 6. The loading section 4 includes a Figure 1 A plurality of mounting tables (not shown) are arranged in the vertical direction of the substrate W. Each mounting table is configured to be able to mount a carrier 7. The carrier 7 is configured to be able to accommodate at least one substrate W in a sealed state. The carrier 7 includes an opening and closing door (not shown) for taking out and putting in the substrate W.

[0028] The feeding and discharging unit 5 is arranged in the direction of the feeding and discharging station 2 and the processing station 3 ( Figure 1 The loading and unloading section 5 includes an opening and closing door (not shown) provided relative to the loading section 4. When the carrier 7 is placed on the loading section 4, the opening and closing door of the carrier 7 and the opening and closing door of the loading and unloading section 5 are opened together, thereby communicating the inside of the loading and unloading section 5 with the inside of the carrier 7.

[0029] The feeding and unloading section 5 has a transport arm A1 and a shelf unit 6 built therein. The transport arm A1 is configured to be able to move horizontally in the width direction of the feeding and unloading section 5, move up and down in the vertical direction, and rotate around the vertical axis. The transport arm A1 is configured to be able to take out a substrate W from the carrier 7 and deliver it to the shelf unit 6, and also to receive a substrate W from the shelf unit 6 and return it to the carrier 7. The shelf unit 6 is located near the processing station 3 and is configured to be able to store substrates W.

[0030] The processing station 3 includes a conveying unit 8 and a plurality of liquid processing units U. The conveying unit 8 is, for example, arranged in the direction of the delivery station 2 and the processing station 3 ( Figure 1The conveying unit 8 is provided with a conveying arm A2 (conveying unit). The conveying arm A2 is configured to be able to perform horizontal movement in the length direction of the conveying unit 8, vertical movement in the vertical direction, and rotation around the vertical axis. The conveying arm A2 is configured to be able to take out a substrate W or a substrate for inspection J from the shelf unit 6 and deliver it to the liquid processing unit U, and also to receive a substrate W from the liquid processing unit U and deliver it back to the shelf unit 6.

[0031] The plurality of liquid processing units U are respectively arranged on both sides of the conveying portion 8 along the length direction ( Figure 1 The liquid processing units U are arranged in a row (in the left-right direction). The liquid processing units U are configured to be able to perform a predetermined process (such as an etching process, a cleaning process, etc.) on the substrate W. The details of the liquid processing units U will be described later.

[0032] The controller Ctr is configured to be able to partially or entirely control the substrate processing system 1. Details of the controller Ctr will be described later.

[0033] [Details of Liquid Processing Unit]

[0034] Next, refer to Figure 2 to Figure 4 , the liquid processing unit U is described in detail. Figure 2 As illustrated, the liquid processing unit U (substrate processing apparatus) includes a rotation holding portion 10, processing liquid supply portions 20, 30, a cup member 40, a heating portion 50, a mask portion 60, and a detection portion 70 (detection portion).

[0035] The rotation holding unit 10 includes a driving unit 11, a shaft 12, and a holding unit 13. The driving unit 11 is operable based on an operation signal from a controller Ctr to rotate the shaft 12. The driving unit 11 may be a power source such as an electric motor.

[0036] The holding portion 13 is provided at the front end of the shaft 12. The holding portion 13 is configured to be able to hold the back side of the substrate W by suction, for example. That is, the rotation holding portion 10 may be configured to be able to rotate the substrate W around the rotation center axis Ax (see FIG. 1 ) perpendicular to the surface of the substrate W while the substrate W is in a substantially horizontal position. Figure 2 ) rotates. Figure 3 As illustrated, a plurality of labyrinth components 13A are provided on the radially outer side of the lower surface of the holding portion 13. The plurality of labyrinth components 13A are substantially cylindrical and are arranged substantially concentrically at intervals from each other.

[0037] The processing liquid supply unit 20 is configured to include a liquid source, valves, piping, etc., which are not shown in the figure. It can work based on the working signal from the controller Ctr, and supply the processing liquid stored in the liquid source from the nozzle 21 to the upper surface of the substrate W. The processing liquid stored in the liquid source can be, for example, an acidic liquid, an alkaline liquid, an organic liquid, or a rinse liquid. The acidic liquid can include, for example, SC-2 liquid (a mixture of hydrochloric acid, hydrogen peroxide and pure water), SPM (a mixture of sulfuric acid and hydrogen peroxide water), HF liquid (hydrofluoric acid), DHF liquid (dilute hydrofluoric acid), HNO3+HF liquid (a mixture of nitric acid and hydrofluoric acid), etc. The alkaline liquid can include, for example, SC-1 liquid (a mixture of ammonia, hydrogen peroxide and pure water), hydrogen peroxide water, etc. The organic liquid can include, for example, IPA (isopropyl alcohol), etc. The rinse liquid can also include, for example, pure water (DIW: deionized water), ozone water, carbonated water (CO2 water), ammonia water, etc.

[0038] like Figure 2 As shown in the example, the nozzle 21 is arranged above the substrate W held by the rotating holding part 10. The discharge port of the nozzle 21 may also be directed toward the upper surface of the substrate W and toward the outer peripheral edge side of the substrate W. Therefore, the processing liquid discharged from the nozzle 21 is supplied to the peripheral edge portion Wb of the upper surface of the substrate W. The nozzle 21 may also be configured to be able to move horizontally or vertically above the substrate W by a driving source not shown (see Figure 2 The arrows Ar1 and Figure 4 .

[0039] The processing liquid supply unit 30 is configured to include a liquid source, a valve, a pipe, etc. (not shown), and can operate based on an operation signal from the controller Ctr to supply the processing liquid stored in the liquid source from the nozzle 31 to the lower surface of the substrate W. The processing liquid stored in the liquid source may be the same as the processing liquid stored in the liquid source of the processing liquid supply unit 20.

[0040] The nozzle 31 is disposed below the substrate W held by the rotating holding unit 10. The discharge port of the nozzle 31 may be directed toward the lower surface of the substrate W and toward the outer peripheral edge of the substrate W. Therefore, the processing liquid discharged from the nozzle 31 is supplied to the peripheral edge portion Wb of the lower surface of the substrate W.

[0041] The cup-shaped member 40 is provided to surround the rotation holding portion 10 and the heating portion 50. The cup-shaped member 40 is configured to collect the processing liquid scattered from the outer periphery of the substrate W to the surroundings when the processing liquid is supplied to the substrate W held and rotated by the rotation holding portion 10. A drain port 41 is provided at the bottom of the cup-shaped member 40. The drain port 41 is configured to discharge the processing liquid collected by the cup-shaped member 40 to the outside of the liquid processing unit U.

[0042] like Figure 3As shown in the example, the heating unit 50 may also be located below the substrate W held in the rotating holding unit 10. The heating unit 50 includes a main body 51, a heat source 52, a fluid supply unit 53, and a heat insulator 54. The main body 51 is provided to surround the rotating holding unit 10 and is disposed between the rotating holding unit 10 and the cup-shaped member 40. Specifically, the outer peripheral surface of the main body 51 abuts against the inner peripheral surface of the cup-shaped member 40 via a plurality of sealing members 55 (e.g., O-rings). Therefore, the airtightness in the space V surrounded by the outer peripheral surface of the main body 51, the inner peripheral surface of the cup-shaped member 40, and the plurality of sealing members 55 is maintained.

[0043] The plurality of fins 51A are provided in the space V of the main body 51 . The plurality of fins 51A are arranged in the vertical direction at predetermined intervals in the space V. The plurality of fins 51A may be, for example, plate-like bodies extending in the circumferential direction of the main body 51 .

[0044] like Figure 3 and Figure 4 As illustrated, a plurality of ejection ports 51B and a plurality of ejection ports 51C are provided on the upper surface of the main body 51. The plurality of ejection ports 51B are arranged in a circular shape along the circumference of the main body 51. The plurality of ejection ports 51B are located at a position opposite to an area in the central area Wa close to the center of the substrate W when the substrate W is held in the rotating holding portion 10. The plurality of ejection ports 51C are arranged in a circular shape along the circumference of the main body 51. The plurality of ejection ports 51C are located at a position radially outward of the plurality of ejection ports 51B. The plurality of ejection ports 51C are located at a position opposite to an area in the central area Wa close to the outer peripheral edge of the substrate W when the substrate W is held in the rotating holding portion 10.

[0045] like Figure 3 As shown in the example, a plurality of labyrinth components 51D are provided radially inwardly in the upper surface of the main body 51. The plurality of labyrinth components 51D are substantially cylindrical and are arranged approximately concentrically at intervals from each other. The plurality of labyrinth components 51D are arranged alternately relative to the plurality of labyrinth components 13A. That is, the plurality of labyrinth components 51D and the plurality of labyrinth components 13A are arranged alternately in the radial direction. The labyrinth structure composed of the plurality of labyrinth components 13A and 51D suppresses the unheated air from entering between the substrate W and the main body 51. Therefore, the heating efficiency of the heating unit 50 for the substrate W can be improved.

[0046] The main body 51 is provided with a flow path 51E that fluidically connects the lower surface of the main body 51 and the space V. The flow path 51E extends in the up-down direction from the lower surface of the main body 51 toward the space V. The main body 51 is provided with a flow path 51F that fluidically connects the plurality of discharge ports 51B and the plurality of discharge ports 51C and the space V. The flow path 51F branches after extending upward from the space V and extends toward the plurality of discharge ports 51B and the plurality of discharge ports 51C, respectively.

[0047] The heat source 52 is embedded in the main body 51 so as to be located near the plurality of fins 51A. The heat source 52 is configured to be operable based on an operation signal from the controller Ctr to heat the plurality of fins 51A. The heat source 52 may be a resistance heater (eg, a sheath heater).

[0048] The fluid supply unit 53 is configured to include a liquid source, a valve, a pipe, etc., which are not shown in the figure. It can work based on the working signal from the controller Ctr, and supply the fluid stored in the fluid source to the flow path 51E. The fluid can also be an inert gas (for example, nitrogen). When the fluid is supplied to the flow path 51E by the fluid supply unit 53, the fluid arrives in the space V and performs heat exchange with the plurality of fins 51A. Thus, the heated fluid flows in the flow path 51F and is ejected from the plurality of ejection ports 51B and 51C to the lower surface (central area Wa) of the substrate W. Thus, the central area Wa of the substrate W is heated from the lower surface side of the substrate W.

[0049] The heat insulator 54 is disposed in a region of the inner peripheral surface of the main body 51 that faces the drive unit 11. The heat insulator 54 is configured to prevent the heat of the main body 51 heated by the heat source 52 from being transferred to the rotation holding unit 10.

[0050] The mask portion 60 is disposed above the cup-shaped member 40 and above the substrate W held by the rotation holding portion 10. Figure 4 As shown, the mask portion 60 is in an annular shape (e.g., a circular ring shape) or an arc shape (e.g., an arc shape) as a whole. The mask portion 60 has a function of rectifying a downflow formed by a blower (not shown) disposed near the top of the liquid processing unit U so that the downflow flows from the central area Wa of the substrate W to the peripheral portion Wb.

[0051] like Figure 2 and Figure 3 As shown in the example, the mask portion 60 includes a base portion 60A and a protrusion 60B. The base portion 60A is in the shape of an annular disk. The protrusion 60B protrudes downward from the vicinity of the inner periphery of the base portion 60A and is substantially cylindrical. The lower portion of the protrusion 60B is opposite to the peripheral portion Wb of the substrate W held by the rotation holding portion 10.

[0052] A peripheral heating unit 61 is disposed inside the protruding portion 60B. The peripheral heating unit 61 is configured to be able to operate based on an operation signal from the controller Ctr to heat the peripheral portion Wb of the substrate W. Figure 4As shown in the example, the peripheral heating portion 61 may be arranged over the substantially entire protrusion 60B. The peripheral heating portion 61 may be configured to heat the peripheral portion Wb of the substrate W by, for example, induction heating. The peripheral heating portion 61 may be configured to heat the peripheral portion Wb of the substrate W by, for example, ejecting a heated fluid (for example, nitrogen) from the lower surface of the protrusion 60B. The peripheral heating portion 61 may heat the peripheral portion Wb of the substrate W by, for example, radiant heat.

[0053] like Figure 2 and Figure 3 As shown in the example, the detection unit 70 is arranged above the peripheral portion Wb of the substrate W. The detection unit 70 is configured to be able to operate based on the operation signal from the controller Ctr and detect the warpage amount of the peripheral portion Wb of the substrate W. The detection unit 70 is configured to be able to send the detected warpage amount to the controller Ctr. The detection unit 70 can be, for example, a camera such as a CCD camera or a COMS camera, or a measuring device such as a laser displacement meter. There is no particular limitation on the location of the detection unit 70 as long as it is within the liquid processing unit U.

[0054] [Controller details]

[0055] like Figure 5 As shown in the example, the controller Ctr has a reading unit M1, a storage unit M2, a processing unit M3, and an indication unit M4 as functional modules. These functional modules are just for the sake of convenience to divide the functions of the controller Ctr into multiple modules, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being implemented by executing a program, and can also be implemented using a dedicated circuit (such as a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit, dedicated integrated circuit) obtained by integrating them.

[0056] The reading unit M1 is configured to read a program from a computer-readable storage medium RM. The storage medium RM records a program for operating each unit of the substrate processing system 1 including the liquid processing unit U. The storage medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an optical magnetic recording disk. In addition, the following each unit of the substrate processing system 1 may include a rotation holding unit 10, a processing liquid supply unit 20, a processing liquid supply unit 30, a heating unit 50, a peripheral heating unit 61, and a detection unit 70.

[0057] The storage unit M2 is configured to store various data. The storage unit M2 may store, for example, a program read from the storage medium RM in the reading unit M1, setting data input by an operator via an external input device (not shown), etc. The storage unit M2 may also store data of a captured image captured by the detection unit 70. The storage unit M2 may also store processing conditions for processing the substrate W, etc.

[0058] The storage unit M2 may also store a model that represents the relationship between the processing conditions for processing the peripheral portion Wb of the substrate W with the processing liquid and the amount of warping generated in the peripheral portion Wb of the substrate W when the substrate W is processed under the processing conditions without heating the peripheral portion Wb of the substrate W with the peripheral heating unit 61. The generation method of the model is as follows, for example. First, the rotating holding unit 10 is made to hold the substrate W for testing. Then, the controller Ctr controls the rotating holding unit 10 to rotate the back side of the test substrate W while adsorbing and holding it. In this state, the controller Ctr controls the heating unit 50 to heat the central area Wa of the substrate W. Then, the controller Ctr controls the processing liquid supply units 20 and 30 to supply the processing liquid to the peripheral portion Wb of the substrate W. At this time, the peripheral portion Wb of the substrate W supplied with the processing liquid is cooled, so that a temperature gradient is generated between the central area Wa of the substrate W and the peripheral portion Wb, and warping is generated in the peripheral portion Wb of the substrate W. Therefore, the warpage amount at this time is detected by the detection unit 70, and is associated with the processing conditions and stored as a model in the storage unit M2. In addition, the processing conditions may also include, for example, the type of processing liquid, the supply flow rate of the processing liquid, the supply temperature of the processing liquid, the rotation speed of the substrate W, the heating temperature of the substrate W by the heating unit 50, etc.

[0059] Furthermore, in contrast to the above, when the processing liquid is supplied to the peripheral portion Wb of the substrate W, the peripheral portion Wb of the substrate W is heated by the peripheral heating portion 61, thereby reducing the temperature gradient and making it difficult for warping to occur in the peripheral portion Wb of the substrate W. Therefore, when the warping amount is obtained, the heating temperature of the peripheral heating portion 61 such that the warping amount is close to 0 can be obtained. Therefore, the model may further store the heating temperature of the peripheral heating portion 61 such that the warping amount is close to 0 in association with the warping amount.

[0060] The processing unit M3 is configured to be able to process various data. The processing unit M3 may generate a signal for operating each unit of the substrate processing system 1 based on various data stored in the storage unit M2, for example.

[0061] The instruction unit M4 is configured to be able to transmit the operation signal generated in the processing unit M3 to each unit of the substrate processing system 1 .

[0062] The hardware of the controller Ctr may be composed of, for example, one or more computers for control. Figure 6As shown, the controller Ctr may also include a circuit C1 as a hardware structure. The circuit C1 may also be composed of circuit elements. The circuit C1 may include, for example, a processor C2, a memory C3, a storage C4, a driver C5, and an input / output port C6.

[0063] The processor C2 may also be configured to execute a program in cooperation with at least one of the memory C3 and the memory C4, and to perform input and output of signals via the input / output port C6, thereby realizing the above-mentioned functional modules. The memory C3 and the memory C4 may function as the storage unit M2. The driver C5 may also be a circuit configured to drive each part of the substrate processing system 1 respectively. The input / output port C6 may also be configured to transfer the input and output of signals between the driver C5 and each part of the substrate processing system 1.

[0064] The substrate processing system 1 may include a controller Ctr, or a controller group (control unit) composed of a plurality of controllers Ctr. When the substrate processing system 1 includes a controller group, each of the above-mentioned functional modules may be implemented by a controller Ctr, or a combination of two or more controllers Ctr. When the controller Ctr is composed of a plurality of computers (circuit C1), each of the above-mentioned functional modules may be implemented by a computer (circuit C1), or a combination of two or more computers (circuit C1). The controller Ctr may also have a plurality of processors C2. In this case, each of the above-mentioned functional modules may be implemented by a processor C2, or a combination of two or more processors C2.

[0065] [Substrate processing method]

[0066] Next, refer to Figure 7 to Figure 10 , describing a method for processing the peripheral edge portion Wb of the substrate W using a processing liquid.

[0067] First, the controller Ctr controls the transport arms A1 and A2 to transport the substrate W from the carrier 7 to the liquid processing unit U. Next, the rotating holding unit 10 holds the substrate W. Next, the controller Ctr controls the rotating holding unit 10 to rotate the substrate W while holding the back side of the substrate W by the holding unit 13. In this state, the controller Ctr controls the heating unit 50 to discharge the heated fluid from the plurality of discharge ports 51B and 51C to the central area Wa of the lower surface of the substrate W (see Figure 7 Step S11 and Figure 8 Thus, the central area Wa of the substrate W is heated.

[0068] The following is an example of the processing conditions in step S11 (see Fig. 9 ).

[0069] The rotation speed of substrate W: about 2400rpm

[0070] The set temperature of the heating unit 50 is about 200°C.

[0071] Flow rate of the heating fluid in the heating unit 50: about 250 ml / min

[0072] Next, the controller Ctr controls the peripheral heating unit 61 to heat the peripheral portion Wb of the substrate W using the peripheral heating unit 61 (see Figure 7 Step S12 and Figure 8 (b)).

[0073] The following is an example of the processing conditions in step S12 (see Fig. 9 ).

[0074] The rotation speed of substrate W: about 2400rpm

[0075] The set temperature of the heating unit 50 is about 200°C.

[0076] Flow rate of the heating fluid in the heating unit 50: about 250 ml / min

[0077] The setting temperature of the peripheral heating unit 61 is about 300°C.

[0078] In step S12, the central area Wa of the substrate W is heated to about 90°C, and the peripheral edge Wb of the substrate W is heated to about 99°C (see Fig.10 moment P1).

[0079] Next, the controller Ctr controls the processing liquid supply units 20 and 30 to supply the chemical solution to the peripheral portion Wb of the substrate W (see Figure 7 Step S13 and Figure 8 (c)). Thus, the peripheral portion Wb of the substrate W is processed. Fig. 9 As illustrated, the supply of the chemical solution from the nozzle 21 may be started after the supply of the chemical solution from the nozzle 31 is started (for example, 2 to 5 seconds later).

[0080] The following is an example of the processing conditions in step S13 (see Fig. 9 ).

[0081] The rotation speed of substrate W: about 2400rpm

[0082] The set temperature of the heating unit 50 is about 200°C.

[0083] Flow rate of the heating fluid in the heating unit 50: about 250 ml / min

[0084] The setting temperature of the peripheral heating unit 61 is about 300°C.

[0085] The discharge flow rate of the liquid medicine from the nozzle 21: about 15 ml / min

[0086] The discharge flow rate of the liquid medicine from the nozzle 31 is about 15 ml / min.

[0087] In step S13, the central area Wa of the substrate W is continuously heated by the heating unit 50 to about 90°C to 115°C. On the other hand, the peripheral edge Wb of the substrate W is cooled to about 80°C by contact with the chemical solution (see Fig.10 Therefore, the temperature difference ΔT1 between the central area Wa of the substrate W and the peripheral portion Wb of the substrate W is 36°C or less. In other words, the controller Ctr sets the temperature of the peripheral heating unit 61 based on the processing conditions of the peripheral portion Wb of the substrate W and the model stored in the storage unit M2 so that the temperature difference ΔT1 becomes 36°C or less.

[0088] Then, after the prescribed processing time (in Fig. 9 In the example, after about 110 seconds, the controller Ctr controls the processing liquid supply units 20 and 30 to stop supplying the chemical solution to the peripheral portion Wb of the substrate W ( Figure 7 At this time, the substrate W is continuously heated by the heating unit 50 and the peripheral heating unit 61. Therefore, in step S14, the temperature of the central area Wa of the substrate W becomes about 115°C, and the temperature of the peripheral area Wb of the substrate W becomes about 105°C (refer to Fig.10 moment P3).

[0089] Then, after the prescribed processing time (in Fig. 9 In the example of FIG. 1 , about 50 seconds later, the controller Ctr controls the processing liquid supply unit 20 to supply the rinsing liquid to the peripheral portion Wb of the substrate W (see Figure 7 Step S15). Thus, the rinsing liquid washes away the chemical solution attached to the peripheral edge Wb of the substrate W, the residue after the chemical solution treatment, and the like.

[0090] The following is an example of the processing conditions in step S15 (see Fig. 9 ).

[0091] The rotation speed of substrate W: about 2400rpm

[0092] The set temperature of the heating unit 50 is about 200°C.

[0093] Flow rate of the heating fluid in the heating unit 50: about 250 ml / min

[0094] The setting temperature of the peripheral heating unit 61 is about 300°C.

[0095] The discharge flow rate of the liquid medicine from the nozzle 21: about 15 ml / min

[0096] In step S15, the central area Wa of the substrate W is continuously heated by the heating unit 50 to about 115° C. On the other hand, the peripheral edge Wb of the substrate W is lowered to about 82° C. by contact with the chemical solution (see Fig.10 During the period P4). Therefore, the temperature difference ΔT2 between the central area Wa of the substrate W and the peripheral portion Wb of the substrate W is 36°C or less. In other words, the controller Ctr sets the temperature of the peripheral heating unit 61 based on the processing conditions of the peripheral portion Wb of the substrate W and the model stored in the storage unit M2 so that the temperature difference ΔT2 becomes 36°C or less.

[0097] Then, after the prescribed processing time (in Fig. 9 In the example, after about 50 seconds, the controller Ctr controls the processing liquid supply unit 20 to stop supplying the rinse liquid to the peripheral portion Wb of the substrate W ( Figure 7 At this time, the substrate W is continuously heated by the heating unit 50 and the peripheral heating unit 61. Therefore, in step S16, the central area Wa of the substrate W is heated to about 115°C, and the peripheral area Wb of the substrate W is heated to about 93°C (refer to Fig.10 moment P5).

[0098] Then, after the prescribed processing time (in Fig. 9 In the example of about 30 seconds later), the controller Ctr controls the peripheral heating unit 61 to stop heating the peripheral portion Wb of the substrate W using the peripheral heating unit 61 (refer to Figure 7 At this time, the heating unit 50 continues to heat the substrate W. Therefore, in step S17, the central area Wa of the substrate W is heated to about 118°C, and the peripheral area Wb of the substrate W is heated to about 96°C (refer to Fig.10 period P6).

[0099] Next, after a predetermined processing time has elapsed, the controller Ctr controls the peripheral heating unit 61 to stop heating the central region Wa of the substrate W using the heating unit 50 (see Figure 7 Step S18). Thus, the substrate W is dried and the processing of the peripheral portion Wb of the substrate W is completed.

[0100] [effect]

[0101] According to the above example, the heating unit 50 and the peripheral heating unit 61 heat the central area Wa and the peripheral portion Wb of the substrate W respectively, so that at least during the period when the processing liquid is supplied to the peripheral portion Wb of the substrate W, the temperature gradient between the central area Wa and the peripheral portion Wb of the substrate W becomes smaller. Therefore, it becomes less likely to cause warping in the peripheral portion Wb of the substrate W, so that the processing liquid easily lands on the target position of the peripheral portion Wb of the substrate W. Therefore, the peripheral portion Wb of the substrate W can be processed with higher precision. In addition, since the processing liquid is supplied to the peripheral portion Wb while the peripheral portion Wb of the substrate W is heated, the processing of the peripheral portion Wb of the substrate W progresses in a state where the reaction of the processing liquid is further promoted. Therefore, the peripheral portion Wb of the substrate W can be processed more efficiently.

[0102] According to the above example, before the processing liquid (chemical solution) is supplied to the peripheral portion Wb of the substrate W by the processing liquid supply unit 20, 30, the peripheral portion Wb of the substrate W is heated by the peripheral heating unit 61. In this case, the peripheral portion Wb of the substrate W is heated at the moment when the processing liquid is supplied to the peripheral portion Wb of the substrate W, so the temperature change of the peripheral portion Wb of the substrate W becomes smaller before and after the start of supplying the processing liquid. Therefore, the temperature gradient between the central area Wa of the substrate W and the peripheral portion Wb becomes smaller. Therefore, the peripheral portion Wb of the substrate W can be processed with higher precision.

[0103] According to the above example, after the processing liquid supply unit 20 stops supplying the processing liquid (rinsing liquid) to the peripheral portion Wb of the substrate W, the peripheral heating unit 61 stops heating the peripheral portion Wb of the substrate W. In this case, the peripheral portion Wb is also being heated at the moment when the processing liquid is stopped being supplied to the peripheral portion Wb of the substrate W, so the temperature change of the peripheral portion Wb of the substrate W becomes smaller before and after the processing liquid is stopped. Therefore, the temperature gradient between the central area Wa of the substrate W and the peripheral portion Wb becomes smaller. Therefore, the peripheral portion Wb of the substrate W can be processed with higher accuracy.

[0104] According to the above example, the temperature differences ΔT1 and ΔT2 between the central area Wa and the peripheral portion Wb of the substrate W are within 36°C. In this case, the warping of the peripheral portion Wb of the substrate W is greatly suppressed. Therefore, the peripheral portion Wb of the substrate W can be processed with higher accuracy. In addition, when the peripheral portion Wb of the substrate W is processed without using the peripheral heating unit 61, as shown in FIG. Fig.10 As shown in the example, the temperature differences ΔT3 and ΔT4 between the central region Wa and the peripheral portion Wb of the substrate W are large values ​​exceeding 36° C., and warping is likely to occur in the peripheral portion Wb of the substrate W.

[0105] According to the above example, the heating unit 50 is located below the substrate W held by the rotating holding unit 10, and is configured to heat the central area Wa of the substrate W from the lower surface side of the substrate W. In this case, it is easy to ensure a space for arranging the device on the upper surface side of the substrate W, and it is easy to ensure a moving path of the substrate W when the rotating holding unit 10 holds the substrate W. Therefore, the liquid processing unit U can be made compact.

[0106] According to the above example, the heating unit 50 is configured to heat the central area Wa of the substrate W by supplying the heated fluid to the lower surface of the substrate W. In this case, the heating fluid supplied to the lower surface of the substrate W flows from the central portion side of the substrate W toward the outer peripheral edge side of the substrate W. Therefore, the heating fluid heats the substrate W while blowing the processing liquid supplied to the peripheral portion Wb of the substrate W to the outside of the substrate W. Therefore, the heating of the substrate W and the purification of the back side of the peripheral portion Wb of the substrate W can be performed by using one heating unit.

[0107] According to the above example, the peripheral heating unit 61 is arranged to face the peripheral portion Wb of the substrate W held by the rotating holding unit 10. In this case, the peripheral heating unit 61 is located near the peripheral portion Wb of the substrate W, so the peripheral portion Wb of the substrate W can be heated more efficiently.

[0108] According to the above example, the heating condition of the peripheral portion Wb of the substrate W by the peripheral heating unit 61 is set based on the processing condition of the peripheral portion Wb of the substrate W and the warpage amount obtained from the model. In this case, by obtaining the model in advance, the heating condition is selected so that the warpage amount becomes small based on the processing condition of the peripheral portion Wb of the substrate W. Therefore, even if the processing condition is different for each substrate to be processed, the output of the peripheral heating unit 61 can be controlled according to the processing condition. Therefore, the peripheral portion Wb of the substrate W can be processed with further high accuracy.

[0109] [Modifications]

[0110] The disclosure in this specification should be considered to be illustrative in all aspects and not restrictive. Various omissions, substitutions, changes, etc. may be made to the above examples without departing from the scope of the invention and its gist.

[0111] (1) The peripheral heating section 61 may start heating the peripheral portion Wb of the substrate W substantially simultaneously with the supply of the processing liquid (chemical solution) to the peripheral portion Wb of the substrate W by the processing liquid supply section 20 or 30. Alternatively, the peripheral heating section 61 may start heating the peripheral portion Wb of the substrate W within a predetermined time (e.g., within about 1 to 5 seconds) after the processing liquid (chemical solution) is supplied to the peripheral portion Wb of the substrate W by the processing liquid supply section 20 or 30.

[0112] (2) The peripheral heating section 61 may stop heating the peripheral portion Wb of the substrate W substantially simultaneously with the processing liquid supply section 20 stopping supplying the processing liquid (rinsing liquid) to the peripheral portion Wb of the substrate W. Alternatively, the peripheral heating section 61 may stop heating the peripheral portion Wb of the substrate W before the processing liquid supply section 20 stops supplying the processing liquid (rinsing liquid) to the peripheral portion Wb of the substrate W (for example, about 1 to 5 seconds before).

[0113] (3) In the above example, the output of the peripheral heating unit 61 is controlled so that the temperature differences ΔT1 and ΔT2 between the central area Wa and the peripheral portion Wb of the substrate W are within 36° C. However, the output of the peripheral heating unit 61 may be controlled so that the temperature differences ΔT1 and ΔT2 are about 0° C. to 36° C. according to the processing conditions of the peripheral portion Wb of the substrate W. That is, the output of the peripheral heating unit 61 may be controlled so that the temperature differences ΔT1 and ΔT2 are within a predetermined range according to the size of the substrate W, the type of the processing liquid (the size of the specific heat capacity of the processing liquid), the discharge flow rate of the processing liquid, the processing time of the peripheral portion Wb of the substrate W, the heating time of the heating unit 50 or the peripheral heating unit 61, etc.

[0114] (4) The position of the heating unit 50 is not particularly limited as long as it can heat the central region Wa of the substrate W. For example, the heating unit 50 may be located above the substrate W held by the rotation holding unit 10 .

[0115] (5) The position of the peripheral heating unit 61 is not particularly limited as long as it can heat the peripheral portion Wb of the substrate W. For example, the peripheral heating unit 61 may not be provided on the mask unit 60 , but may be located to the side or below the substrate W held by the rotation holding unit 10 .

[0116] (6) When viewed from the top and bottom, the peripheral heating portion 61 may extend in a substantially circular ring shape so as to overlap substantially the entire circumference of the peripheral portion Wb of the substrate W, or may extend in a substantially circular arc shape (major arc shape or inferior arc shape) so as to overlap a portion of the peripheral portion Wb of the substrate W. Alternatively, Fig.11As shown in the example, the plurality of peripheral heating units 61 are arranged along the peripheral portion Wb of the substrate W when viewed from the top and bottom. One peripheral heating unit 61 may heat one location of the peripheral portion Wb of the substrate W in a spot shape.

[0117] (7) In the above example, the output of the peripheral heating unit 61 is controlled based on the model acquired in advance, but it is also possible that, for example, when a plurality of substrates W are processed under substantially the same processing conditions for the peripheral portion Wb of the substrate W, the output of the peripheral heating unit 61 is fixed. Alternatively, the amount of warping caused by supplying the processing liquid to the peripheral portion Wb of the substrate W may be detected by the detection unit 70, and based on the detected amount of warping, the controller Ctr sets the heating conditions of the peripheral portion Wb of the substrate W using the peripheral heating unit 61. In this case, the heating conditions of the peripheral portion Wb of the substrate W vary based on the amount of warping detected by the detection unit 70, and therefore, the output of the peripheral heating unit 61 is controlled over time so that the amount of warping decreases in real time during the processing of the substrate W. Therefore, the peripheral portion Wb of the substrate W can be processed with further high precision.

[0118] [Other examples]

[0119] Example 1. An example of a substrate processing device includes: a rotating holding part, which is configured to hold and rotate a substrate; a processing liquid supplying part, which is configured to supply processing liquid to the peripheral part of the substrate; a heating part, which is configured to heat the area including the center part of the substrate; a peripheral heating part, which is configured to heat the peripheral part of the substrate; and a control part. The control part is configured to perform: a first process of controlling the rotating holding part to rotate the substrate; a second process of controlling the processing liquid supplying part to supply processing liquid to the peripheral part of the rotating substrate; and a third process of controlling the heating part and the peripheral heating part to heat the area including the center part of the substrate and the peripheral part of the substrate at least during the supply of processing liquid to the peripheral part of the substrate, so that the difference between the temperature of the area including the center part of the substrate and the temperature of the peripheral part of the substrate is within a specified range.

[0120] However, as disclosed in patent document 1 etc., in the substrate processing device in the past, in order to promote the reaction of treatment liquid, the area containing the center of substrate is heated. In this case, when the peripheral portion is supplied with treatment liquid in order to process the peripheral portion of substrate, the temperature of treatment liquid is usually lower than the temperature of heated substrate, so the temperature of the peripheral portion of substrate is reduced, and sometimes a temperature gradient is generated between the area containing the center of substrate and the peripheral portion of substrate. At this time, warping is generated in the peripheral portion of substrate due to temperature gradient, and the landing position of treatment liquid landing to the peripheral portion of substrate may be offset. As a result, it is possible to affect the processing accuracy of the peripheral portion of substrate.

[0121] However, according to Example 1, the heating unit and the peripheral heating unit heat the region of the center of the substrate and the peripheral portion of the substrate respectively, so at least during the period when the peripheral portion of the substrate is supplied with treatment liquid, the temperature gradient between the region of the center of the substrate and the peripheral portion of the substrate decreases. Therefore, it becomes difficult to produce warping at the peripheral portion of the substrate, so the treatment liquid easily lands on the target position of the peripheral portion of the substrate. Therefore, the peripheral portion of the substrate can be processed with higher accuracy. In addition, while the peripheral portion of the substrate is heated, the peripheral portion is supplied with treatment liquid, so the processing progress of the peripheral portion of the substrate under the state that the reaction of the treatment liquid has been further promoted. Therefore, the peripheral portion of the substrate can be processed more efficiently.

[0122] Example 2. In the device of Example 1, the third process may include the following process: before the process liquid supply unit is used to supply the process liquid to the peripheral portion of the substrate, the peripheral portion of the substrate is heated by the peripheral heating unit. In this case, the peripheral portion of the substrate has been heated at the moment when the process liquid is supplied to the peripheral portion of the substrate, so that the temperature change of the peripheral portion of the substrate decreases before and after the process liquid is supplied. Therefore, the temperature gradient between the region containing the center portion of the substrate and the peripheral portion of the substrate becomes smaller. Therefore, the peripheral portion of the substrate can be further processed with high precision.

[0123] Example 3. In the device of Example 1 or Example 2, it can also be that the third process includes the following process: after the treatment liquid supply unit stops supplying the treatment liquid to the peripheral portion of the substrate, the heating of the peripheral portion of the substrate by the peripheral heating unit is stopped. In this case, the peripheral portion is also heated at the moment when the treatment liquid is stopped to be supplied to the peripheral portion of the substrate, so the temperature change of the peripheral portion of the substrate becomes smaller before and after the supply of the treatment liquid is stopped. Therefore, the temperature gradient between the area containing the center portion of the substrate and the peripheral portion of the substrate becomes smaller. Therefore, the peripheral portion of the substrate can be further processed with high precision.

[0124] Example 4. In any of the apparatuses of Examples 1 to 3, the temperature difference between the region including the center portion of the substrate and the temperature of the peripheral portion of the substrate may be within 36° C. In this case, the warping of the peripheral portion of the substrate is greatly suppressed. Therefore, the peripheral portion of the substrate can be processed with further high precision.

[0125] Example 5. In any of the devices of Examples 1 to 4, the heating unit may be located below the substrate held by the rotating holding unit, and may be configured to heat the region including the center of the substrate from the lower surface of the substrate. In this case, it is easy to ensure a space for arranging the device on the upper surface of the substrate, and it is easy to ensure a moving path of the substrate when the rotating holding unit holds the substrate. Therefore, the substrate processing device can be made compact.

[0126] Example 6. In the device of Example 5, the heating unit may be configured to heat the area including the center of the substrate by supplying the heated fluid to the lower surface of the substrate. In this case, the heating fluid supplied to the lower surface of the substrate flows from the center of the substrate toward the outer peripheral side of the substrate. Therefore, the heating fluid heats the substrate while blowing the processing liquid supplied to the peripheral portion of the substrate to the outside of the substrate. Therefore, the heating of the substrate and the purification of the back side of the peripheral portion of the substrate can be performed by one heating unit.

[0127] Example 7. In any of the devices of Examples 1 to 6, the peripheral heating unit may be arranged to face the peripheral portion of the substrate held by the rotating holding unit. In this case, the peripheral heating unit is located near the peripheral portion of the substrate, so that the peripheral portion of the substrate can be heated more efficiently.

[0128] Example 8. In any of the devices of Examples 1 to 7, the control unit may be configured to store a model that represents the relationship between the processing conditions for processing the peripheral portion of the substrate with the processing liquid and the amount of warping generated in the peripheral portion of the substrate when the substrate is processed with the processing conditions without heating the peripheral portion of the substrate with the peripheral heating unit, and the third processing includes the following processing: based on the processing conditions of the peripheral portion of the substrate in the second processing and the amount of warping obtained by the model, the heating conditions of the peripheral portion of the substrate using the peripheral heating unit are set. In this case, by obtaining the model in advance, the heating conditions that reduce the amount of warping are selected based on the processing conditions of the peripheral portion of the substrate. Therefore, even if the processing conditions are different for each substrate to be processed, the output of the peripheral heating unit can be controlled according to the processing conditions. Therefore, the peripheral portion of the substrate can be processed with further high precision.

[0129] Example 9. In any of the devices of Examples 1 to 7, it is also possible that the device further includes a detection unit configured to detect the amount of warpage of the peripheral portion of the substrate, and the third processing includes the following processing: based on the amount of warpage detected by the detection unit in the second processing, the heating conditions of the peripheral portion of the substrate using the peripheral heating unit are set. In this case, the heating conditions of the peripheral portion of the substrate are changed based on the amount of warpage detected by the detection unit, and the output of the peripheral heating unit is controlled over time so that the amount of warpage is reduced in real time during the processing of the substrate. Therefore, the peripheral portion of the substrate can be processed with higher precision.

[0130] Example 10. An example of a substrate processing method includes: a first step of supplying a processing liquid to the peripheral portion of the substrate while holding the substrate with a rotating holding portion and rotating it; and a second step of heating the region including the center portion of the substrate and the peripheral portion of the substrate using a heating portion and a peripheral heating portion respectively during the supply of the processing liquid to at least the peripheral portion of the substrate, so that the difference between the temperature of the region including the center portion of the substrate and the temperature of the peripheral portion of the substrate is within a specified range. In this case, the same effect as the device of Example 1 can be obtained.

[0131] Example 11. In the method of Example 10, the second step may include the following process: before supplying the processing liquid to the peripheral portion of the substrate, the peripheral portion of the substrate is heated by the peripheral heating unit. In this case, the same effect as the device of Example 2 can be obtained.

[0132] Example 12. In the method of Example 10 or Example 11, the second step may include the following process: after stopping the supply of the processing liquid to the peripheral portion of the substrate, stopping the heating of the peripheral portion of the substrate by the peripheral heating unit. In this case, the same effect as the device of Example 3 can be obtained.

[0133] Example 13. In any of the methods of Examples 10 to 12, the temperature difference between the region including the center of the substrate and the temperature of the peripheral portion of the substrate may be within 36° C. In this case, the same effects as those of the apparatus of Example 4 can be obtained.

[0134] Example 14. In any of the methods of Examples 10 to 13, the heating unit may be located below the substrate held by the rotating holding unit, and configured to heat the region including the center of the substrate from the bottom surface of the substrate. In this case, the same effect as the device of Example 5 can be obtained.

[0135] Example 15. In the method of Example 14, the heating unit is configured to heat the region including the center of the substrate by supplying heated fluid to the lower surface of the substrate. In this case, the same effects as those of the apparatus of Example 6 can be obtained.

[0136] Example 16. In any of the methods of Examples 10 to 15, the peripheral heating unit may be arranged to face the peripheral portion of the substrate held by the rotating holding unit. In this case, the same effects as those of the device of Example 7 can be obtained.

[0137] Example 17. In any of the methods of Examples 10 to 16, it is also possible to further include a third step of constructing a model, the model representing the relationship between the processing conditions for processing the peripheral portion of the substrate with the processing liquid and the amount of warpage generated in the peripheral portion of the substrate when the substrate is processed under the processing conditions without heating the peripheral portion of the substrate with the peripheral heating unit, and the second step includes the following processing: based on the processing conditions of the peripheral portion of the substrate in the first step and the amount of warpage obtained by the model, the heating conditions for the peripheral portion of the substrate using the peripheral heating unit are set. In this case, the same effect as the device of Example 8 can be obtained.

[0138] Example 18. In any of the methods of Examples 10 to 16, the first step may include the following processing: when supplying the processing liquid to the peripheral portion of the substrate, the detection unit detects the warping amount of the peripheral portion of the substrate, and the second step includes the following processing: based on the warping amount detected by the detection unit in the first step, the heating condition of the peripheral portion of the substrate by the peripheral heating unit is set. In this case, the same effect as the device of Example 9 can be obtained.

[0139] Example 19. An example of a computer-readable storage medium can record a program for causing a substrate processing device to execute any of the methods in Examples 10 to 18. In this case, the same effects as those of the device in Example 1 can be obtained. In this specification, a computer-readable storage medium may include a non-transitory tangible medium (non-transitory computer recording medium: non-transitory computer storage medium) (such as various main storage devices or auxiliary storage devices) or a transmission signal (transitory computer recording medium: transient computer storage medium) (such as a data signal that can be provided via a network).

[0140] Description of Reference Numerals

[0141] 1...substrate processing system (substrate processing device); 10...rotation holding portion; 20, 30...processing liquid supply portion; 50...heating portion; 60...masking portion; 61...peripheral heating portion; 70...detection portion; Ctr...controller (control portion); U...liquid processing unit (substrate processing device); W...substrate; Wa...central area; Wb...peripheral portion.

Claims

1. A substrate processing device, characterized in that: include: A rotation holding portion configured to hold and rotate the substrate; a processing liquid supply unit configured to supply the processing liquid to the peripheral portion of the substrate; a heating portion configured to heat a region including a central portion of the substrate; a peripheral heating portion configured to heat the peripheral portion of the substrate; and Control Department, The control unit is configured to execute: A first process is to control the rotation holding part to rotate the substrate; a second process of controlling the processing liquid supply unit to supply the processing liquid to the peripheral portion of the rotating substrate; and The third treatment controls the heating portion and the peripheral heating portion to heat the area including the center portion of the substrate and the peripheral portion of the substrate, at least during the period when the treatment liquid is supplied to the peripheral portion of the substrate, so that the difference between the temperature of the area including the center portion of the substrate and the temperature of the peripheral portion of the substrate is within a specified range.

2. The substrate processing device according to claim 1, characterized in that: The third process includes a process of heating the peripheral edge portion of the substrate by the peripheral edge heating portion before supplying the processing liquid to the peripheral edge portion of the substrate by the processing liquid supply portion.

3. The substrate processing device according to claim 1, characterized in that: The third process includes a process of stopping heating the peripheral edge portion of the substrate by the peripheral edge heating portion after the processing liquid supply portion stops supplying the processing liquid to the peripheral edge portion of the substrate.

4. The substrate processing device according to claim 1, characterized in that: The difference between the temperature of the region including the center portion of the substrate and the temperature of the peripheral portion of the substrate is within 36°C.

5. The substrate processing device according to claim 1, characterized in that: The heating unit is located below the substrate held by the rotation holding unit, and is configured to heat a region including a center portion of the substrate from a lower surface side of the substrate.

6. The substrate processing device according to claim 5, characterized in that: The heating unit is configured to heat a region including a center portion of the substrate by supplying heated fluid to the lower surface of the substrate.

7. The substrate processing device according to claim 1, characterized in that: The peripheral heating portion is disposed so as to face the peripheral portion of the substrate held by the rotation holding portion.

8. The substrate processing device according to any one of claims 1 to 7, characterized in that: The control unit is configured to store a model, wherein the model represents a relationship between a processing condition for processing the peripheral portion of the substrate with a processing liquid and an amount of warping generated in the peripheral portion of the substrate when the substrate is processed under the processing condition without heating the peripheral portion of the substrate with the peripheral heating unit, The third process includes a process of setting heating conditions of the peripheral portion of the substrate by the peripheral heating unit based on the processing conditions of the peripheral portion of the substrate in the second process and the warpage amount obtained from the model.

9. The substrate processing device according to any one of claims 1 to 7, characterized in that: The device further includes a detection unit configured to detect a warping amount of a peripheral portion of the substrate. The third process includes a step of setting heating conditions of the peripheral portion of the substrate by the peripheral heating portion based on the warpage amount detected by the detection portion in the second process.

10. A substrate processing method, characterized in that: include: In a first step, a processing liquid is supplied to a peripheral portion of the substrate while the substrate is held and rotated by a rotation holding portion; and In the second step, at least during the period when the processing liquid is supplied to the peripheral portion of the substrate, the heating portion and the peripheral heating portion are used to heat the area including the central portion of the substrate and the peripheral portion of the substrate respectively, so that the difference between the temperature of the area including the central portion of the substrate and the temperature of the peripheral portion of the substrate is within a specified range.

11. The substrate processing method according to claim 10, characterized in that: The second step includes a process of heating the peripheral edge portion of the substrate by the peripheral edge heating unit before supplying the processing liquid to the peripheral edge portion of the substrate.

12. The substrate processing method according to claim 10, characterized in that: The second step includes a process of stopping heating of the peripheral edge portion of the substrate by the peripheral edge heating unit after stopping supply of the processing liquid to the peripheral edge portion of the substrate.

13. The substrate processing method according to claim 10, characterized in that: The difference between the temperature of the region including the center portion of the substrate and the temperature of the peripheral portion of the substrate is within 36°C.

14. The substrate processing method according to claim 10, characterized in that: The heating unit is located below the substrate held by the rotation holding unit, and is configured to heat a region including a center portion of the substrate from a lower surface side of the substrate.

15. The substrate processing method according to claim 14, characterized in that: The heating unit is configured to heat a region including a center portion of the substrate by supplying heated fluid to the lower surface of the substrate.

16. The substrate processing method according to claim 10, characterized in that: The peripheral heating portion is disposed so as to face the peripheral portion of the substrate held by the rotation holding portion.

17. The substrate processing method according to any one of claims 10 to 16, characterized in that: The method further includes a third step of constructing a model, wherein the model represents a relationship between a treatment condition for treating the peripheral portion of the substrate with a treatment liquid and an amount of warpage generated at the peripheral portion of the substrate when the substrate is treated under the treatment condition without heating the peripheral portion of the substrate with the peripheral heating unit. The second step includes a process of setting heating conditions of the peripheral portion of the substrate using the peripheral heating unit based on the processing conditions of the peripheral portion of the substrate in the first step and the warpage amount obtained from the model.

18. The substrate processing method according to any one of claims 10 to 16, characterized in that: The first step includes the following processing: when supplying the processing liquid to the peripheral portion of the substrate, using the detection unit to detect the warping amount of the peripheral portion of the substrate, The second step includes a process of setting a heating condition of the peripheral portion of the substrate by the peripheral heating portion based on the warpage amount detected by the detection portion in the first step.

19. A computer-readable storage medium, characterized in that: A program for causing a substrate processing apparatus to execute the substrate processing method according to claim 10 is recorded.

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