Capacitor array

Abstract

A capacitor array (1) is provided with: a plurality of capacitor sections (10) arranged in a plane in a plane direction orthogonal to a thickness direction (T); and a sealing part (60) which seals the plurality of capacitor parts (10) from two main surface sides facing each other in the thickness direction (T) of the plurality of capacitor parts (10), and which is made of an insulating material, the sealing part (60) being formed by laminating a plurality of sealing layers in the thickness direction (T), the plurality of sealing layers including: a first sealing layer (60A) positioned closest to the capacitor parts (10) in the thickness direction (T), and a second sealing layer (60B) positioned closest to the capacitor parts (10) in the thickness direction (T); and a second sealing layer (60B) that is positioned on the opposite side of the capacitor section (10) from the first sealing layer (60A) in the thickness direction (T), and that constitutes two main surfaces of the sealing section (60) that face each other in the thickness direction (T).

Description

Technical Field

[0001] The present invention relates to capacitor arrays. Background Art

[0002] Patent document 1 discloses a capacitor array, which includes: a plurality of solid electrolytic capacitor elements divided from a solid electrolytic capacitor sheet; a sheet-shaped first sealing layer; and a sheet-shaped second sealing layer, the solid electrolytic capacitor sheet includes: an anode plate formed of a valve-acting metal; a porous layer provided on at least one main surface of the anode plate; a dielectric layer provided on the surface of the porous layer; and a cathode layer including a solid electrolyte layer provided on the surface of the dielectric layer, the solid electrolytic capacitor sheet having a first main surface and a second main surface facing each other in the thickness direction, the first main surface side of each of the plurality of solid electrolytic capacitor elements is arranged on the first sealing layer, the second sealing layer is arranged in a manner to cover the plurality of solid electrolytic capacitor elements on the first sealing layer from the second main surface side, and the solid electrolytic capacitor elements are divided by slit-shaped sheet removal portions.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2020-167361 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] In the capacitor array described in Patent Document 1, a sealing layer is provided to seal the periphery of a plurality of solid electrolytic capacitor elements. However, in the capacitor array described in Patent Document 1, there is room for improvement in suppressing warping, strain, ripples, etc. caused by the sealing layer, that is, suppressing a decrease in flatness (coplanarity).

[0008] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a capacitor array capable of suppressing a decrease in flatness.

[0009] Solutions for solving problems

[0010] The capacitor array of the present invention is characterized in that the capacitor array includes: a plurality of capacitor parts, which are arranged in a plane in a plane direction orthogonal to the thickness direction; and a sealing part, which seals the plurality of capacitor parts from two main surface sides opposite to each other in the thickness direction, and is composed of an insulating material, the sealing part is formed by stacking a plurality of sealing layers in the thickness direction, and the plurality of sealing layers include: a first sealing layer, which is located closest to the capacitor part side in the thickness direction; and a second sealing layer, which is located on the opposite side of the capacitor part than the first sealing layer in the thickness direction, and constitutes two main surfaces opposite to each other in the thickness direction of the sealing part.

[0011] Effects of the Invention

[0012] According to the present invention, it is possible to provide a capacitor array capable of suppressing a decrease in flatness. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 FIG. 1 is a schematic plan view showing an example of a capacitor array according to the present invention.

[0014] Figure 2 Yes means Figure 1 FIG. 1 is a schematic cross-sectional view of an example of a cross section of the capacitor array along line segment A1 - A2 shown.

[0015] Figure 3 It is magnified Figure 2 Schematic cross-sectional view of the area surrounded by the dotted line in FIG.

[0016] Figure 4 Yes means Figure 1 FIG. 1 is a schematic cross-sectional view of an example of a cross section of the capacitor array along line segment B1 - B2 shown.

[0017] Figure 5 It is magnified Figure 4 Schematic cross-sectional view of the area surrounded by the dotted line in FIG.

[0018] Figure 6 This is a schematic cross-sectional view showing, in an enlarged manner, a via conductor and its surroundings in a capacitor array in a case where the insulating material constituting the second sealing layer includes glass cloth. DETAILED DESCRIPTION

[0019] The capacitor array of the present invention is described below. In addition, the present invention is not limited to the following structure, and can be appropriately changed within the scope of the present invention. In addition, a structure obtained by combining multiple preferred structures described below is also the present invention.

[0020] The drawings shown below are schematic diagrams, and their dimensions, aspect ratios, and other aspects may differ from those of actual products.

[0021] Figure 1 FIG. 1 is a schematic plan view showing an example of a capacitor array according to the present invention.

[0022] Figure 1 The capacitor array 1 shown has a plurality of capacitor portions 10 .

[0023] The number of capacitor units 10 is not particularly limited as long as it is two or more.

[0024] The plurality of capacitor portions 10 are arranged in a plane direction perpendicular to the thickness direction T. Figure 1 In the example shown, the plurality of capacitor portions 10 are arranged in a plane along a first direction U orthogonal to the thickness direction T and a second direction V orthogonal to the thickness direction T and the first direction U. That is, the plane direction is a direction including the first direction U and the second direction V.

[0025] The plurality of capacitor units 10 may be Figure 1 The capacitor units 10 may be arranged in multiple directions as shown, or may be arranged in one direction. In addition, the capacitor units 10 may be arranged regularly or irregularly.

[0026] As a planar shape of the capacitor portion 10 when viewed from the thickness direction T, for example, the following can be cited. Figure 1 A rectangle (square or oblong) as shown, a quadrilateral other than a rectangle, a triangle, a pentagon, a hexagon or other polygon, a circle, an ellipse, etc.

[0027] The planar shapes of the plurality of capacitor portions 10 when viewed in the thickness direction T may be the same as or different from each other, or may be partially different from each other.

[0028] The areas of the plurality of capacitor portions 10 when viewed in the thickness direction T may be the same as or different from each other, or may be partially different from each other.

[0029] Figure 2 Yes means Figure 1 FIG. 1 is a schematic cross-sectional view of an example of a cross section of the capacitor array along line segment A1 - A2 shown. Figure 3 It is magnified Figure 2 Schematic cross-sectional view of the area surrounded by the dotted line in FIG. Figure 4 Yes means Figure 1 FIG. 1 is a schematic cross-sectional view of an example of a cross section of the capacitor array along line segment B1 - B2 shown. Figure 5 It is magnified Figure 4 Schematic cross-sectional view of the area surrounded by the dotted line in FIG.

[0030] like Figure 2 , Figure 3 , Figure 4 as well as Figure 5 As shown, the capacitor portion 10 has an anode plate 20 , a dielectric layer 30 , and a cathode layer 40 .

[0031] Hereinafter, an example in which capacitor unit 10 is configured as an electrolytic capacitor will be described.

[0032] The anode plate 20 includes a core 21 and a porous layer 22 .

[0033] The core 21 is preferably formed of metal, and more preferably of valve-acting metal. When the core 21 is formed of valve-acting metal, the anode plate 20 is also referred to as a valve-acting metal substrate.

[0034] Examples of the valve-acting metal include simple metals such as aluminum, tantalum, niobium, titanium, and zirconium, and alloys containing at least one of these simple metals. Among them, aluminum or an aluminum alloy is preferred.

[0035] The porous layer 22 is provided on at least one of the two main surfaces of the core 21 that are opposite to each other in the thickness direction T. That is, the porous layer 22 may be provided on only one main surface of the core 21, or may be provided on the other main surface of the core 21. Figure 2 As shown in the figure, the anode plate 20 is provided on both main surfaces of the core 21. Thus, the anode plate 20 has a porous layer 22 on at least one of the two main surfaces facing each other in the thickness direction T. As a result, the surface area of ​​the anode plate 20 increases, so that the capacity of the capacitor unit 10 is easily increased.

[0036] It is preferable that the porous layer 22 is an etching layer formed by etching the surface of the anode plate 20 .

[0037] The shape of the anode plate 20 is preferably a flat plate, and more preferably a foil.

[0038] In this specification, the plate shape also includes a foil shape, a sheet shape, a film shape, etc., and these shapes are not distinguished based on the size in the thickness direction.

[0039] The dielectric layer 30 is provided on the surface of the porous layer 22. More specifically, the dielectric layer 30 is provided along the surface (contour) of each pore present in the porous layer 22.

[0040] Preferably, the dielectric layer 30 is composed of an oxide film of the valve metal described above. For example, when the anode plate 20 is an aluminum foil, the oxide film that becomes the dielectric layer 30 is formed by subjecting the anode plate 20 to an anodic oxidation treatment (also called a chemical conversion treatment) in an aqueous solution containing ammonium adipate or the like. The dielectric layer 30 is formed along the surface of the porous layer 22, and thus fine pores (recesses) are provided in the dielectric layer 30.

[0041] The cathode layer 40 is disposed on the surface of the dielectric layer 30 .

[0042] Preferably, cathode layer 40 includes solid electrolyte layer 41 provided on the surface of dielectric layer 30 and conductor layer 42 provided on the surface of solid electrolyte layer 41. When cathode layer 40 includes solid electrolyte layer 41, capacitor unit 10 forms a solid electrolytic capacitor.

[0043] Preferably, solid electrolyte layer 41 includes an inner layer provided inside the pores of dielectric layer 30 and an outer layer covering the inner layer.

[0044] As a constituent material of the solid electrolyte layer 41, for example, conductive polymers such as polypyrrole, polythiophene, and polyaniline can be cited. Among them, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene) (PEDOT) is particularly preferred. In addition, the conductive polymer may contain a dopant such as polystyrene sulfonic acid (PSS).

[0045] The solid electrolyte layer 41 is formed in a predetermined area on the surface of the dielectric layer 30, for example, by applying a dispersion of a conductive polymer such as poly(3,4-ethylenedioxythiophene) to the surface of the dielectric layer 30 and drying it, or by using a treatment solution containing a polymerizable monomer such as 3,4-ethylenedioxythiophene to form a polymer film such as poly(3,4-ethylenedioxythiophene) on the surface of the dielectric layer 30.

[0046] Preferably, the conductor layer 42 includes a conductive resin layer 42A provided on the surface of the solid electrolyte layer 41 and a metal layer 42B provided on the surface of the conductive resin layer 42A.

[0047] As the conductive resin layer 42A, for example, a conductive adhesive layer containing at least one conductive filler selected from the group consisting of a copper filler, a silver filler, a nickel filler, and a carbon filler can be cited.

[0048] Preferably, the metal layer 42B contains a metal filler.

[0049] Preferably, the metal filler is at least one selected from the group consisting of a copper filler, a silver filler, and a nickel filler.

[0050] The metal layer 42B may be, for example, a metal plating film, a metal foil, etc. In this case, the metal layer 42B is preferably formed of at least one metal selected from the group consisting of copper, silver, nickel, and an alloy containing at least one of these metals as a main component.

[0051] In this specification, the main component refers to the element component with the largest weight ratio.

[0052] The conductor layer 42 may include, for example, a carbon layer as the conductive resin layer 42A and a copper layer as the metal layer 42B.

[0053] The carbon layer is formed in a predetermined region by applying a carbon paste containing a carbon filler to the surface of the solid electrolyte layer 41 by a sponge transfer method, a screen printing method, a dispenser coating method, an inkjet printing method, or the like, for example.

[0054] The copper layer is formed in a predetermined region by applying a copper paste containing a copper filler to the surface of the carbon layer by sponge transfer, screen printing, spray coating, dispenser coating, inkjet printing or the like.

[0055] Alternatively, the conductor layer 42 may include at least one of the conductive resin layer 42A and the metal layer 42B. That is, the conductor layer 42 may include only the conductive resin layer 42A or only the metal layer 42B, or may include both conductive resin layers 42A and 42B. Figure 2 As shown in FIG. 4 , the conductive resin layer 42A and the metal layer 42B are included.

[0056] Preferably, the capacitor unit 10 further includes a shielding layer 50 provided on the periphery of the porous layer 22 when viewed in the thickness direction T. In this case, insulation between the anode plate 20 and the cathode layer 40 is ensured to prevent a short circuit therebetween.

[0057] It is preferable that the shielding layer 50 is provided on the entire periphery of the porous layer 22. Alternatively, the shielding layer 50 may be provided on a portion of the periphery of the porous layer 22.

[0058] The shielding layer 50 is preferably provided to extend inward from at least one of the two main surfaces of the anode plate 20 in the thickness direction T, and more preferably provided to extend inward from both main surfaces of the anode plate 20 .

[0059] The shielding layer 50 may or may not be in contact with the core portion 21 in the thickness direction T.

[0060] Alternatively, the shielding layer 50 may be provided outside the porous layer 22 in addition to being provided inside the porous layer 22. In this case, the shielding layer 50 may be filled inside the porous layer 22 and provided on the surface of the filled porous layer 22. In other words, the dimension of the shielding layer 50 in the thickness direction T may be larger than the dimension of the porous layer 22 in the thickness direction T.

[0061] When the shielding layer 50 is provided outside the porous layer 22 , it is preferable that the shielding layer 50 is provided in a region surrounding the cathode layer 40 when viewed in the thickness direction T.

[0062] When viewed in the thickness direction T, the shielding layer 50 may partially overlap with the cathode layer 40 , or may not overlap with the cathode layer 40 at all.

[0063] The shielding layer 50 is made of an insulating material.

[0064] As insulating materials constituting the shielding layer 50, for example, polyphenylsulfone (PPS), polyethersulfone (PES), cyanate resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, etc.), a composition composed of soluble polyimide siloxane and epoxy resin, polyimide resin, polyamide-imide resin, their derivatives or precursors, etc. can be cited.

[0065] Shielding layer 50 is formed on the periphery of porous layer 22 by, for example, applying the above-mentioned insulating material to the positions of both main surfaces of anode plate 20 overlapping with the periphery of porous layer 22 and penetrating from both main surfaces of anode plate 20 toward the inside.

[0066] The shielding layer 50 may be formed on the porous layer 22 before or after the dielectric layer 30 is formed.

[0067] Figure 2 and Figure 4 The capacitor array 1 shown has a sealing portion 60 in addition to the plurality of capacitor portions 10 .

[0068] The sealing portion 60 seals the plurality of capacitor portions 10 from two main surface sides of the plurality of capacitor portions 10 that are opposed to each other in the thickness direction T. Thus, the plurality of capacitor portions 10 are protected by the sealing portion 60 .

[0069] The sealing portion 60 is made of an insulating material. In other words, the sealing portion 60 functions as an insulating portion.

[0070] The sealing portion 60 is formed by laminating a plurality of sealing layers in the thickness direction T.

[0071] The plurality of sealing layers constituting the sealing portion 60 include a first sealing layer 60A and a second sealing layer 60B. Figure 2 In the example shown in FIG. 1 , the sealing portion 60 is formed by stacking the first sealing layer 60A and the second sealing layer 60B in the thickness direction T in this order from the capacitor portion 10 side. Figure 2 In the example shown in FIG. 1 and FIG. 2 , the second sealing layer 60B is adjacent to the first sealing layer 60A on the opposite side of the capacitor portion 10 .

[0072] The first sealing layer 60A is located at a position closest to the capacitor unit 10 in the thickness direction T among the plurality of sealing layers. Therefore, the first sealing layer 60A functions as a sealing layer that follows the surface shape of the capacitor unit 10 .

[0073] The second sealing layer 60B is located on the opposite side of the capacitor unit 10 than the first sealing layer 60A in the thickness direction T, and constitutes two main surfaces of the sealing unit 60 that are opposite to each other in the thickness direction T. That is, the second sealing layer 60B is located on the outermost surface of the sealing unit 60. Therefore, the second sealing layer 60B functions as a sealing layer that makes the two main surfaces of the sealing unit 60 flat and further makes the two main surfaces of the capacitor array 1 flat.

[0074] In the capacitor array 1, in the sealing portion 60, the first sealing layer 60A can be mainly responsible for sealing the capacitor portion 10, and the second sealing layer 60B can be mainly responsible for making the two main surfaces of the sealing portion 60 flat and thus making the two main surfaces of the capacitor array 1 flat. Therefore, in the capacitor array 1 in which the sealing portion 60 is composed of a plurality of sealing layers including the first sealing layer 60A and the second sealing layer 60B, warping, strain, ripples, etc. caused by the sealing portion 60 are less likely to occur compared to a capacitor array in which the sealing portion is composed of only one sealing layer.

[0075] As described above, in the capacitor array 1 , the occurrence of warping, strain, ripples, etc. can be suppressed, and therefore, a decrease in flatness can be suppressed.

[0076] The sealing portion 60 only needs to include at least the first sealing layer 60A and the second sealing layer 60B, and may further include at least one sealing layer between the first sealing layer 60A and the second sealing layer 60B.

[0077] The insulating material constituting the first sealing layer 60A may include an insulating resin.

[0078] Examples of the insulating resin contained in the insulating material constituting the first sealing layer 60A include epoxy resin, phenol resin, polyimide resin, and the like.

[0079] The insulating material constituting the first sealing layer 60A may further contain an inorganic filler.

[0080] Examples of the inorganic filler contained in the insulating material constituting the first sealing layer 60A include a silica filler and an alumina filler.

[0081] Preferably, the median diameter D of the inorganic filler contained in the insulating material constituting the first sealing layer 60A is 50 In this case, even if the first sealing layer 60A contains an inorganic filler, it is easy to follow the surface shape of the capacitor unit 10 .

[0082] Preferably, the median diameter D of the inorganic filler contained in the insulating material constituting the first sealing layer 60A is 50It is 0.1μm or more.

[0083] The median diameter D of the inorganic filler contained in the insulating material constituting the sealing layer is determined as follows: 50 First, the capacitor array is cut, ground, etc., so that the cross section of the sealing layer of the exposed object along the thickness direction is revealed. Figure 2 A cross section along the thickness direction of the exposed first sealing layer as shown is revealed. Next, an image of the above cross section is captured using a scanning electron microscope (SEM) or the like. Next, in the captured cross-sectional image, an analysis method such as energy dispersive X-ray analysis (EDX) is used to confirm the existence region of the first sealing layer, and further confirm the existence region of the inorganic filler existing inside the first sealing layer. Then, by performing image analysis of the cross-sectional image, the equivalent circle diameter of the inorganic filler existing inside the first sealing layer is measured, and the obtained equivalent circle diameter is set as the particle size of the inorganic filler. Thereafter, the cumulative particle size distribution based on the number of particles is calculated based on the obtained particle size of the inorganic filler, and the particle size with a cumulative probability of 50% in the cumulative particle size distribution based on the number of particles is determined as the median diameter D of the inorganic filler. 50 .

[0084] The first sealing layer 60A is formed to seal the capacitor unit 10 from both main surfaces of the capacitor unit 10 by, for example, a method of thermocompression bonding an insulating resin sheet or a method of applying an insulating resin paste and then thermally curing the paste.

[0085] The insulating material constituting the second sealing layer 60B may include an insulating resin.

[0086] Examples of the insulating resin contained in the insulating material constituting the second sealing layer 60B include epoxy resin, phenol resin, polyimide resin, and the like.

[0087] It is preferable that the insulating materials constituting the first sealing layer 60A and the second sealing layer 60B contain insulating resins different from each other.

[0088] In this specification, "the insulating materials constituting the multiple sealing layers contain insulating resins different from each other" means that, for the insulating materials constituting the multiple sealing layers, at least the types of insulating resins are different from each other, and preferably, in addition to the types of insulating resins, the proportion of the insulating resin content relative to the total amount of the insulating material is also different from each other.

[0089] The insulating materials constituting the first sealing layer 60A and the second sealing layer 60B contain insulating resins different from each other, so that the first sealing layer 60A and the second sealing layer 60B are likely to have different properties from each other.

[0090] As described above, in the capacitor array 1, in the sealing portion 60, the first sealing layer 60A is mainly responsible for sealing the capacitor portion 10, and the second sealing layer 60B is mainly responsible for making the two main surfaces of the sealing portion 60 flat and thus making the two main surfaces of the capacitor array 1 flat. Therefore, it is preferred that the first sealing layer 60A and the second sealing layer 60B have different characteristics from each other.

[0091] Furthermore, the insulating materials constituting the first sealing layer 60A and the second sealing layer 60B may include the same insulating resin.

[0092] In this specification, "the insulating materials constituting the multiple sealing layers contain the same insulating resin as each other" means that, for the insulating materials constituting the multiple sealing layers, at least the types of the insulating resins are the same as each other, and preferably, in addition to the types of the insulating resins, the ratio of the content of the insulating resin to the total amount of the insulating materials is also the same as each other.

[0093] The insulating material constituting the second sealing layer 60B may further contain an inorganic filler.

[0094] Examples of the inorganic filler contained in the insulating material constituting the second sealing layer 60B include a silica filler and an alumina filler.

[0095] The inorganic fillers contained in the insulating materials constituting the first sealing layer 60A and the second sealing layer 60B may be the same as or different from each other at least in terms of the type.

[0096] The median diameter D of the inorganic filler contained in the insulating material constituting the first sealing layer 60A and the second sealing layer 60B is 50 They can be the same as or different from each other.

[0097] In the first sealing layer 60A and the second sealing layer 60B, the ratio of the content of the inorganic filler to the total amount of the insulating material may be the same as or different from each other.

[0098] The insulating material constituting the second sealing layer 60B may further include glass cloth. In this case, the rigidity of the second sealing layer 60B is easily increased, so that the flatness of the second sealing layer 60B is easily maintained. As a result, the flatness of the capacitor array 1 is easily maintained.

[0099] Examples of insulating materials containing glass cloth include prepreg and the like.

[0100] The second sealing layer 60B is formed adjacent to the first sealing layer 60A on the opposite side of the capacitor portion 10 by, for example, a method of thermally pressing an insulating resin sheet after forming the first sealing layer 60A by the above-mentioned method, a method of thermally curing the insulating resin slurry after applying the slurry, etc. In this way, if the second sealing layer 60B is formed on the first sealing layer 60A by a lamination process, it is not necessary to soften the already formed first sealing layer 60A due to the heat treatment when forming the second sealing layer 60B. Therefore, when the second sealing layer 60B is formed, the first sealing layer 60A and the second sealing layer 60B are not integrated, and an interface exists between the first sealing layer 60A and the second sealing layer 60B.

[0101] From the viewpoint of achieving a state where an interface exists between the first sealing layer 60A and the second sealing layer 60B, it is preferable that the glass transition temperature of the insulating material constituting the second sealing layer 60B is lower than the glass transition temperature of the insulating material constituting the first sealing layer 60A.

[0102] In addition, the glass transition temperature of the insulating material constituting the second sealing layer 60B may be the same as the glass transition temperature of the insulating material constituting the first sealing layer 60A, or may be higher than the glass transition temperature of the insulating material constituting the first sealing layer 60A. When the glass transition temperature of the insulating material constituting the second sealing layer 60B is higher than the glass transition temperature of the insulating material constituting the first sealing layer 60A, even if heat treatment is performed in the manufacturing process of the capacitor array 1, it is easy to maintain the flatness of the two main surfaces of the sealing portion 60 constituted by the second sealing layer 60B, and further, it is easy to maintain the flatness of the two main surfaces of the capacitor array 1, compared with the case where the glass transition temperature of the insulating material constituting the second sealing layer 60B is lower than the glass transition temperature of the insulating material constituting the first sealing layer 60A.

[0103] The glass transition temperature of the insulating material constituting the sealing layer is measured by thermogravimetric-differential thermal analysis (TG-DTA) or differential scanning calorimetry (DSC).

[0104] Preferably, the linear expansion coefficient of the second sealing layer 60B in the thickness direction T is smaller than the linear expansion coefficient of the first sealing layer 60A in the thickness direction T. When the linear expansion coefficient of the second sealing layer 60B in the thickness direction T is smaller than the linear expansion coefficient of the first sealing layer 60A in the thickness direction T, even when heat treatment is performed in the manufacturing process of the capacitor array 1, it is easy to maintain the flatness of the two main surfaces of the sealing portion 60 formed by the second sealing layer 60B, and further, it is easy to maintain the flatness of the two main surfaces of the capacitor array 1, compared with the case where the linear expansion coefficient of the second sealing layer 60B in the thickness direction T is greater than the linear expansion coefficient of the first sealing layer 60A in the thickness direction T.

[0105] Furthermore, the linear expansion coefficient of the second sealing layer 60B in the thickness direction T may be the same as the linear expansion coefficient of the first sealing layer 60A in the thickness direction T, or may be larger than the linear expansion coefficient of the first sealing layer 60A in the thickness direction T.

[0106] The linear expansion coefficient of the sealing layer in the thickness direction was measured by thermomechanical analysis (TMA).

[0107] Preferably, the first sealing layer 60A includes a first insulating portion 61 covering both main surfaces of the plurality of capacitor portions 10. Figure 2 In the example shown in FIG. 1 and FIG. 2 , the first insulating portion 61 covers the cathode layer 40 and the shielding layer 50 constituting both main surfaces of the plurality of capacitor portions 10 .

[0108] When viewed in the thickness direction T, the first insulating portion 61 overlaps with the plurality of capacitor portions 10 .

[0109] Preferably, in a region on one of the two main surfaces of the sealing portion 60 , a maximum dimension da1 of the first insulating portion 61 of the first sealing layer 60A in the thickness direction T and a maximum dimension db1 of the second sealing layer 60B in the thickness direction T are different from each other.

[0110] Preferably, in the region on the side of one of the two main surfaces of the sealing portion 60, the maximum dimension da1 of the first insulating portion 61 of the first sealing layer 60A in the thickness direction T is larger than the maximum dimension db1 of the second sealing layer 60B in the thickness direction T. In this case, it is easy to make the first insulating portion 61 follow the surface shape of the capacitor portion 10, and it is easy to make the main surface of the first insulating portion 61 on the opposite side of the capacitor portion 10 flat. As a result, it is easy to make the two main surfaces of the sealing portion 60 flat, and further, it is easy to make the two main surfaces of the capacitor array 1 flat.

[0111] Preferably, in the area on the side of one of the two main surfaces of the sealing portion 60, the ratio (da1 / db1) of the maximum dimension da1 of the first insulating portion 61 of the first sealing layer 60A in the thickness direction T to the maximum dimension db1 of the second sealing layer 60B in the thickness direction T is greater than 110%.

[0112] Preferably, in the region on one of the two main surfaces of the sealing portion 60, a ratio (da1 / db1) of a maximum dimension da1 of the first insulating portion 61 of the first sealing layer 60A in the thickness direction T to a maximum dimension db1 of the second sealing layer 60B in the thickness direction T is less than 500%.

[0113] Preferably, in a region on one of the two main surfaces of the sealing portion 60 , the maximum dimension da1 of the first insulating portion 61 of the first sealing layer 60A in the thickness direction T is 5 μm or more.

[0114] Preferably, in a region on one of the two main surfaces of the sealing portion 60 , a maximum dimension da1 of the first insulating portion 61 of the first sealing layer 60A in the thickness direction T is 100 μm or less.

[0115] Preferably, in a region on one of the two main surfaces of the sealing portion 60 , the maximum dimension db1 of the second sealing layer 60B in the thickness direction T is 100 μm or less.

[0116] Preferably, in a region on one of the two main surfaces of the sealing portion 60 , the maximum dimension db1 of the second sealing layer 60B in the thickness direction T is 5 μm or more.

[0117] Alternatively, in a region on one of the two main surfaces of the sealing portion 60, a ratio (da2 / da1) of a minimum dimension da2 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A to a maximum dimension da1 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A is 50% or less. In this case, it can be said that a large step exists on one main surface of the capacitor portion 10 located on one main surface side of the sealing portion 60. In view of this, in the capacitor array 1, even if a large step exists on one main surface of the capacitor portion 10, a plurality of sealing layers including the first sealing layer 60A and the second sealing layer 60B can be used to suppress a decrease in the flatness of the capacitor array 1.

[0118] It may also be that, in the area on the side of one of the two main surfaces of the sealing portion 60, the ratio (da2 / da1) of the minimum dimension da2 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A to the maximum dimension da1 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A is greater than 5%.

[0119] The maximum dimension da1 of the first insulating portion 61 of the first sealing layer 60A in the thickness direction T corresponds to the maximum dimension of the portion of the first sealing layer 60A that overlaps with the plurality of capacitor portions 10 when viewed in the thickness direction T. Figure 3 and Figure 5 In the example shown, the maximum dimension da1 of the first insulating portion 61 of the first sealing layer 60A in the thickness direction T corresponds to the distance in the thickness direction T between the main surface of the first insulating portion 61 opposite to the capacitor portion 10 and the main surface of the shielding layer 50 opposite to the anode plate 20 .

[0120] The minimum dimension da2 of the first insulating portion 61 of the first sealing layer 60A in the thickness direction T corresponds to the minimum dimension of the portion of the first sealing layer 60A that overlaps with the plurality of capacitor portions 10 when viewed in the thickness direction T. Figure 3 and Figure 5 In the example shown, the minimum dimension da2 of the first insulating portion 61 of the first sealing layer 60A in the thickness direction T is equivalent to the distance in the thickness direction T between the main surface of the first insulating portion 61 on the opposite side to the capacitor portion 10 and the main surface of the cathode layer 40 on the opposite side to the anode plate 20, and the main surface of the cathode layer 40 on the opposite side to the anode plate 20 is the main surface of the conductor layer 42 on the opposite side to the anode plate 20.

[0121] The maximum dimension db1 of the second sealing layer 60B in the thickness direction T corresponds to the maximum distance in the thickness direction T between the main surface of the second sealing layer 60B on the opposite side to the capacitor unit 10 and the main surface of the second sealing layer 60B on the capacitor unit 10 side.

[0122] The maximum and minimum dimensions of the sealing layer in the thickness direction are determined as follows. First, the capacitor array is cut, ground, etc. to reveal a cross section of the sealing layer in the thickness direction. Figure 2 The cross section along the thickness direction of the exposed first sealing layer and the second sealing layer as shown in the figure is revealed. Then, an image of the above cross section is taken using a scanning electron microscope or the like. Then, in the taken cross-sectional image, an analysis method such as energy dispersive X-ray analysis is used to confirm the existence area of ​​the first insulating portion of the first sealing layer and the existence area of ​​the second sealing layer. Then, by performing image analysis of the cross-sectional image, the maximum dimension of the first insulating portion of the first sealing layer in the thickness direction, the minimum dimension of the first insulating portion of the first sealing layer in the thickness direction, and the maximum dimension of the second sealing layer in the thickness direction are measured.

[0123] In the above, the maximum dimension in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A, the minimum dimension in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A, and the maximum dimension in the thickness direction T of the second sealing layer 60B are described, but preferably, the same morphology is also applied to the region on the other main surface side of the two main surfaces of the sealing portion 60.

[0124] Preferably, the first sealing layer 60A further includes a second insulating portion 62 for isolating the plurality of capacitor portions 10 into individual capacitor portions 10. Figure 2 In the illustrated example, the second insulating portion 62 is filled between the two capacitor portions 10 to separate the two capacitor portions 10 into individual capacitor portions 10 .

[0125] Preferably, the first sealing layer 60A further includes a third insulating portion 63 penetrating each of the plurality of capacitor portions 10 in the thickness direction T. Figure 2 In the example shown in FIG. 1 and FIG. 2 , the third insulating portion 63 penetrates the anode plate 20 and the shielding layer 50 of each of the plurality of capacitor portions 10 in the thickness direction T. As shown in FIG.

[0126] When the first sealing layer 60A includes the first insulating portion 61 , the second insulating portion 62 , and the third insulating portion 63 , the first insulating portion 61 , the second insulating portion 62 , and the third insulating portion 63 are provided so as to follow the surface shape of the capacitor portion 10 .

[0127] When the first sealing layer 60A includes the first insulating portion 61, the second insulating portion 62, and the third insulating portion 63, the Figure 2 As shown in the figure, the first insulating portion 61, the second insulating portion 62 and the third insulating portion 63 are integrated, and the interfaces of the insulating portions are not visible. Alternatively, the first insulating portion 61, the second insulating portion 62 and the third insulating portion 63 may not be integrated, and the interfaces of the insulating portions may be visible.

[0128] Preferably, capacitor array 1 further includes through-hole conductor 70A.

[0129] The through-hole conductor 70A penetrates the capacitor portion 10 and the sealing portion 60 in the thickness direction T. Figure 2 In the example shown in FIG. 1 and FIG. 2 , the via-hole conductor 70A not only penetrates the capacitor portion 10 in the thickness direction T, but also penetrates the first insulating portion 61 of the first sealing layer 60A and the second sealing layer 60B in the thickness direction T.

[0130] Preferably, the through-hole conductor 70A is provided on at least the inner wall surface of the through-hole 71A penetrating the capacitor portion 10 and the sealing portion 60 in the thickness direction T. Figure 2 In the examples shown in FIG. 1 and FIG. 2 , the through-hole conductor 70A is not provided throughout the entire interior of the through-hole 71A but is provided on the inner wall surface of the through-hole 71A.

[0131] Preferably, the through-hole conductor 70A is electrically connected to the anode plate 20 at the inner wall surface of the through-hole 71A. More specifically, preferably, the through-hole conductor 70A is electrically connected to the end surface of the anode plate 20 facing the inner wall surface of the through-hole 71A in the planar direction. Thus, the anode plate 20 is electrically conducted to the outside via the through-hole conductor 70A.

[0132] Preferably, core 21 and porous layer 22 are exposed to the end surface of anode plate 20 electrically connected to through-hole conductor 70A. In this case, core 21 is electrically connected to through-hole conductor 70A and porous layer 22 is also electrically connected to through-hole conductor 70A.

[0133] Preferably, the through-hole conductor 70A is electrically connected to the anode plate 20 over the entire circumference of the through-hole 71A when viewed in the thickness direction T. In this case, the connection resistance between the anode plate 20 and the through-hole conductor 70A is easily reduced, and thus the equivalent series resistance (ESR) of the capacitor unit 10 is easily reduced.

[0134] For example, the through-hole conductor 70A is formed as follows. First, a through-hole 71A is formed that penetrates the capacitor portion 10 and the sealing portion 60 in the thickness direction T by drilling, laser processing, etc. Then, the through-hole conductor 70A is formed by metallizing the inner wall surface of the through-hole 71A with a metal material containing a metal with low resistance such as copper, gold, silver, etc. When forming the through-hole conductor 70A, for example, the inner wall surface of the through-hole 71A is metallized by using a non-electrolytic copper plating process, an electrolytic copper plating process, etc., so that the processing becomes easy. In addition, regarding the method of forming the through-hole conductor 70A, in addition to the method of metallizing the inner wall surface of the through-hole 71A, a method of filling the through-hole 71A with a metal material, a composite material of metal and resin, etc. may also be used.

[0135] Preferably, the capacitor array 1 further includes an anode connection layer 72 provided between the anode plate 20 and the through-hole conductor 70A in the planar direction. Figure 2 In the example shown in FIG. 1 and FIG. 2 , the anode connecting layer 72 is in contact with both the anode plate 20 and the through-hole conductor 70A.

[0136] The anode connection layer 72 is provided between the anode plate 20 and the through-hole conductor 70A in the planar direction, so that the anode connection layer 72 functions as a barrier layer for the anode plate 20, and more specifically, functions as a barrier layer for the core 21 and the porous layer 22. If the anode connection layer 72 functions as a barrier layer for the anode plate 20, the dissolution of the anode plate 20 generated during the treatment with a chemical solution for forming the external electrode layer 80A described later can be suppressed, and further, the penetration of the chemical solution into the capacitor part 10 can be suppressed, so that the reliability of the capacitor array 1 can be easily improved.

[0137] Preferably, the anode plate 20 and the through-hole conductor 70A are electrically connected via the anode connecting layer 72 .

[0138] Preferably, the dimension of the anode connection layer 72 in the thickness direction T is larger than the dimension of the anode plate 20 in the thickness direction T. In this case, the entire end surface of the anode plate 20 is covered by the anode connection layer 72, so the barrier property of the anode connection layer 72 to the anode plate 20 is easily improved.

[0139] Preferably, the dimension of the anode connecting layer 72 in the thickness direction T is larger than 100% of the dimension of the anode plate 20 in the thickness direction T and is equal to or smaller than 200% of the dimension of the anode plate 20 in the thickness direction T.

[0140] Furthermore, the dimension of the anode connecting layer 72 in the thickness direction T may be the same as the dimension of the anode plate 20 in the thickness direction T, or may be smaller than the dimension of the anode plate 20 in the thickness direction T.

[0141] Preferably, when viewed from the thickness direction T, the through-hole conductor 70A is connected to the anode connection layer 72 over the entire circumference of the through-hole 71A. In this case, the contact area between the through-hole conductor 70A and the anode connection layer 72 increases, so the connection resistance between the through-hole conductor 70A and the anode connection layer 72 is easily reduced. As a result, the connection resistance between the anode plate 20 and the through-hole conductor 70A is easily reduced, so the equivalent series resistance of the capacitor unit 10 is easily reduced. In addition, the close contact between the through-hole conductor 70A and the anode connection layer 72 is easily improved, so it is not easy to cause undesirable conditions such as peeling between the through-hole conductor 70A and the anode connection layer 72 due to thermal stress.

[0142] Anode connection layer 72 preferably includes a layer containing nickel as a main component. In this case, damage to the metal (eg, aluminum) constituting anode plate 20 is reduced, so the barrier property of anode connection layer 72 to anode plate 20 is easily improved.

[0143] Furthermore, the anode connection layer 72 may not be provided between the anode plate 20 and the through-hole conductor 70A in the planar direction. In this case, the through-hole conductor 70A may be directly connected to the end surface of the anode plate 20 .

[0144] Preferably, the capacitor array 1 further includes an external electrode layer 80A electrically connected to the through-hole conductor 70A. Figure 2 In the example shown in FIG. 1 and FIG. 2 , the external electrode layer 80A is provided on the surface of the through-hole conductor 70A, and functions as a connection terminal of the capacitor array 1 (capacitor unit 10 ). Figure 2 In the examples shown in FIG. 1 and FIG. 2 , the external electrode layer 80A is electrically connected to the anode plate 20 via the through-hole conductor 70A, and functions as a connection terminal for the anode plate 20 .

[0145] Examples of the constituent material of the external electrode layer 80A include metal materials containing low-resistance metals such as silver, gold, and copper. In this case, the external electrode layer 80A is formed by plating the surface of the through-hole conductor 70A, for example.

[0146] In order to improve the close fit between the external electrode layer 80A and other components, in order to improve the close fit between the external electrode layer 80A and the through-hole conductor 70A, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin can also be used as the constituent material of the external electrode layer 80A.

[0147] Preferably, the capacitor array 1 further includes a resin filling portion 90A formed by filling the through hole 71A with a resin material. Figure 2 In the example shown in , resin filling portion 90A is provided in the space surrounded by through-hole conductor 70A on the inner wall surface of through-hole 71A. If the space in through-hole 71A is eliminated by providing resin filling portion 90A, delamination of through-hole conductor 70A is suppressed.

[0148] It is preferable that the thermal expansion coefficient of the resin filling portion 90A is higher than that of the through-hole conductor 70A. More specifically, it is preferable that the thermal expansion coefficient of the resin material filled in the through-hole 71A is higher than that of the constituent material (e.g., copper) of the through-hole conductor 70A. In this case, the resin filling portion 90A, more specifically, the resin material filled in the through-hole 71A, expands under a high temperature environment, thereby pressing the through-hole conductor 70A against the inner wall surface of the through-hole 71A from the inside to the outside of the through-hole 71A, so that the occurrence of delamination of the through-hole conductor 70A is sufficiently suppressed.

[0149] Furthermore, the thermal expansion coefficient of resin filling portion 90A may be the same as that of through-hole conductor 70A, or may be lower than that of through-hole conductor 70A. More specifically, the thermal expansion coefficient of the resin material filled in through-hole 71A may be the same as that of the material constituting through-hole conductor 70A, or may be lower than that of the material constituting through-hole conductor 70A.

[0150] Furthermore, capacitor array 1 may not include resin filling portion 90A. In this case, via-hole conductor 70A is preferably provided not only on the inner wall surface of through-hole 71A but also throughout the entire interior of through-hole 71A.

[0151] Preferably, the capacitor array 1 further includes a through-hole conductor 70B.

[0152] The through-hole conductor 70B penetrates the capacitor portion 10 and the sealing portion 60 in the thickness direction T. Strictly speaking, it penetrates the sealing portion 60 in the thickness direction T. Figure 2 In the example shown in FIG. 1 and FIG. 2 , the via-hole conductor 70B penetrates the third insulating portion 63 of the first sealing layer 60A and the second sealing layer 60B.

[0153] Preferably, the through-hole conductor 70B is provided on at least the inner wall surface of a through-hole 71B that penetrates the capacitor portion 10 and the sealing portion 60 in the thickness direction T, and strictly speaking, penetrates the sealing portion 60. Figure 2 In the examples shown in FIG. 1 and FIG. 2 , the through-hole conductor 70B is not provided throughout the entire interior of the through-hole 71B but is provided on the inner wall surface of the through-hole 71B.

[0154] The through-hole conductor 70B is formed, for example, as follows. First, a through hole is formed that penetrates the capacitor unit 10 in the thickness direction T by drilling, laser processing, etc. Next, the first sealing layer 60A is formed in a manner that the capacitor unit 10 is sealed from the two main surface sides of the capacitor unit 10, thereby forming a third insulating portion 63 in which the insulating material is filled in the above-mentioned through hole. Furthermore, the second sealing layer 60B is formed in a manner adjacent to the first sealing layer 60A on the opposite side of the capacitor unit 10. Then, the through hole 71B is formed by drilling, laser processing, etc. on the third insulating portion 63 of the first sealing layer 60A and the second sealing layer 60B. At this time, by making the diameter of the through hole 71B smaller than the diameter of the third insulating portion 63, a state is formed in which the third insulating portion 63 is provided between the inner wall surface of the through hole formed previously and the inner wall surface of the through hole 71B in the planar direction. Then, the inner wall surface of the through hole 71B is metalized with a metal material containing a metal with low resistance such as copper, gold, or silver, thereby forming the through hole conductor 70B. When forming the through hole conductor 70B, for example, the inner wall surface of the through hole 71B is metalized by electroless copper plating, electrolytic copper plating, etc., so that processing becomes easy. In addition, as for the method of forming the through hole conductor 70B, in addition to the method of metalizing the inner wall surface of the through hole 71B, a method of filling the through hole 71B with a metal material, a composite material of metal and resin, etc. may also be used.

[0155] As described above, when the through-hole conductor 70B is provided in a manner that the third insulating portion 63 penetrates the first sealing layer 60A in the thickness direction T, the third insulating portion 63 is provided between the capacitor portion 10 and the through-hole conductor 70B in the planar direction, and further provided between the anode plate 20 and the through-hole conductor 70B. Figure 2 In the examples shown in FIG. 1 and FIG. 2 , the third insulating portion 63 is in contact with both the capacitor portion 10 and the through-hole conductor 70B, and further, is in contact with both the anode plate 20 and the through-hole conductor 70B.

[0156] The third insulating portion 63 of the first sealing layer 60A is arranged in the planar direction between the capacitor portion 10 and the through-hole conductor 70B, and further between the anode plate 20 and the through-hole conductor 70B, thereby ensuring the insulation between the anode plate 20 and the through-hole conductor 70B, and further ensuring the insulation between the anode plate 20 and the cathode layer 40, thereby preventing a short circuit between the two.

[0157] When the third insulating portion 63 of the first sealing layer 60A is in contact with both the capacitor portion 10 and the through-hole conductor 70B, and further in contact with both the anode plate 20 and the through-hole conductor 70B, it is preferable that Figure 2As shown in the figure, the core 21 and the porous layer 22 are exposed to the end face of the anode plate 20 in contact with the third insulating portion 63. In this case, the contact area between the porous layer 22 and the third insulating portion 63 is increased, thereby improving the close contact between the porous layer 22 and the third insulating portion 63, so that it is not easy to produce undesirable conditions such as peeling between the porous layer 22 and the third insulating portion 63.

[0158] In the case where the core 21 and the porous layer 22 are exposed to the end face of the anode plate 20 in contact with the third insulating portion 63 of the first sealing layer 60A, it is preferred that the shielding layer 50, whose constituent material enters the pores of the porous layer 22 and spreads to the inside of the porous layer 22, is provided around the through-hole conductor 70B. In this case, the insulation between the anode plate 20 and the through-hole conductor 70B is sufficiently ensured, and further the insulation between the anode plate 20 and the cathode layer 40 is sufficiently ensured, and a short circuit between the two is sufficiently prevented.

[0159] In the case where the core 21 and the porous layer 22 are exposed to the end surface of the anode plate 20 in contact with the third insulating portion 63 of the first sealing layer 60A, it is preferred that the insulating material constituting the third insulating portion 63 enters the pores of the porous layer 22. In this case, the mechanical strength of the porous layer 22 is improved, and the occurrence of delamination due to the pores of the porous layer 22 is suppressed.

[0160] It is preferable that the thermal expansion coefficient of the third insulating portion 63 of the first sealing layer 60A is higher than the thermal expansion coefficient of the through-hole conductor 70B. More specifically, it is preferable that the thermal expansion coefficient of the insulating material constituting the third insulating portion 63 is higher than the thermal expansion coefficient of the constituent material (e.g., copper) of the through-hole conductor 70B. In this case, the third insulating portion 63, more specifically, the insulating material constituting the third insulating portion 63, expands in a high temperature environment, thereby pressing the porous layer 22 and the through-hole conductor 70B, and thus the occurrence of delamination is sufficiently suppressed.

[0161] Furthermore, the thermal expansion coefficient of the third insulating portion 63 of the first sealing layer 60A may be the same as the thermal expansion coefficient of the through-hole conductor 70B, or may be lower than the thermal expansion coefficient of the through-hole conductor 70B. More specifically, the thermal expansion coefficient of the insulating material constituting the third insulating portion 63 may be the same as the thermal expansion coefficient of the material constituting the through-hole conductor 70B, or may be lower than the thermal expansion coefficient of the material constituting the through-hole conductor 70B.

[0162] Preferably, the capacitor array 1 further includes an external electrode layer 80B electrically connected to the through-hole conductor 70B. Figure 2 In the example shown in FIG. 1 and FIG. 2 , the external electrode layer 80B is provided on the surface of the through-hole conductor 70B, and functions as a connection terminal of the capacitor array 1 (capacitor unit 10 ).

[0163] Examples of the constituent material of the external electrode layer 80B include metal materials containing low-resistance metals such as silver, gold, and copper. In this case, the external electrode layer 80B is formed by, for example, plating the surface of the through-hole conductor 70B.

[0164] In order to improve the close fit between the external electrode layer 80B and other components, in order to improve the close fit between the external electrode layer 80B and the through-hole conductor 70B, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin can also be used as the constituent material of the external electrode layer 80B.

[0165] The constituent materials of the external electrode layer 80A and the external electrode layer 80B are preferably the same in at least the type, but may be different from each other.

[0166] exist Figure 1 In the example shown, an external electrode layer 80A electrically connected to the anode plate 20 and an external electrode layer 80B electrically connected to the cathode layer 40 are respectively provided in the plurality of capacitor units 10, but the arrangement may be such that at least one of the external electrode layer 80A and the external electrode layer 80B is common to the plurality of capacitor units 10.

[0167] exist Figure 2 In the examples shown in FIGS. 1 and 10 , the external electrode layer 80A and the external electrode layer 80B are provided on both principal surface sides of the sealing portion 60 , but may be provided only on one principal surface side of the sealing portion 60 .

[0168] Preferably, the capacitor array 1 further includes a via conductor 73 that penetrates the sealing portion 60 in the thickness direction T and is connected to the cathode layer 40 and the external electrode layer 80B. Figure 2 In the examples shown in FIG. 1 and FIG. 2 , the via conductor 73 penetrates the first insulating portion 61 of the first sealing layer 60A and the second sealing layer 60B in the thickness direction T and is connected to the cathode layer 40 and the external electrode layer 80B.

[0169] Examples of the constituent material of via conductor 73 include metal materials containing a low-resistance metal such as silver, gold, or copper.

[0170] The via conductor 73 is formed, for example, by plating the inner wall surface of a through hole penetrating the first insulating portion 61 of the first sealing layer 60A and the second sealing layer 60B in the thickness direction T with the above-mentioned metal material, or by performing heat treatment after filling with a conductive paste.

[0171] When forming via conductor 73 by the above method, stress concentrates on the side surface of via conductor 73 on the external electrode layer 80B side, and cracks may occur in via conductor 73. In contrast, if the insulating material constituting second sealing layer 60B includes glass cloth as described above, the occurrence of cracks in via conductor 73 can be suppressed as follows.

[0172] Figure 6 This is a schematic cross-sectional view showing, in an enlarged manner, a via conductor and its surroundings in a capacitor array in a case where the insulating material constituting the second sealing layer includes glass cloth.

[0173] If the insulating material constituting the second sealing layer 60B includes glass fiber cloth, Figure 6 As shown, the glass cloth G tends to protrude in the plane direction from the inner wall surface of the portion of the through hole that penetrates the second sealing layer 60B in which the via conductor 73 is to be formed. When the via conductor 73 is formed in the through hole in which the glass cloth G protrudes by the above method, the stress is dispersed due to the protrusion of the glass cloth G, thereby suppressing the occurrence of cracks in the via conductor 73.

[0174] exist Figure 2 In the example shown in FIG. 1 and FIG. 2 , through-hole conductor 70B is electrically connected to cathode layer 40 via external electrode layer 80B and via conductor 73 . In this way, it is preferable that through-hole conductor 70B is electrically connected to cathode layer 40 .

[0175] exist Figure 2 In the examples shown in FIG. 1 and FIG. 2 , the external electrode layer 80B is electrically connected to the cathode layer 40 through the via conductor 73 , and functions as a connection terminal for the cathode layer 40 .

[0176] Preferably, the capacitor array 1 further includes a resin filling portion 90B formed by filling the through hole 71B with a resin material. Figure 2 In the example shown in FIG. 1 , resin filling portion 90B is provided in a space surrounded by through-hole conductor 70B on the inner wall surface of through-hole 71B. If the space in through-hole 71B is eliminated by providing resin filling portion 90B, delamination of through-hole conductor 70B is suppressed.

[0177] It is preferable that the thermal expansion coefficient of the resin filling portion 90B is higher than that of the through-hole conductor 70B. More specifically, it is preferable that the thermal expansion coefficient of the resin material filled in the through-hole 71B is higher than that of the constituent material (e.g., copper) of the through-hole conductor 70B. In this case, the resin filling portion 90B, more specifically, the resin material filled in the through-hole 71B, expands under a high temperature environment, thereby pressing the through-hole conductor 70B against the inner wall surface of the through-hole 71B from the inside to the outside of the through-hole 71B, so that the occurrence of delamination of the through-hole conductor 70B is sufficiently suppressed.

[0178] Furthermore, the thermal expansion coefficient of resin filling portion 90B may be the same as that of through-hole conductor 70B, or may be lower than that of through-hole conductor 70B. More specifically, the thermal expansion coefficient of the resin material filled in through-hole 71B may be the same as that of the material constituting through-hole conductor 70B, or may be lower than that of the material constituting through-hole conductor 70B.

[0179] Furthermore, capacitor array 1 may not include resin filling portion 90B. In this case, via-hole conductor 70B is preferably provided not only on the inner wall surface of through-hole 71B but also throughout the entire interior of through-hole 71B.

[0180] In the capacitor array of the present invention, the capacitor unit is not limited to the electrolytic capacitor including the above-mentioned solid electrolytic capacitor. In the capacitor array of the present invention, the capacitor unit may also be constituted by, for example, a ceramic capacitor using barium titanate, a thin film capacitor using silicon nitride (SiN), silicon dioxide (SiO2), hydrogen fluoride (HF), etc., a trench capacitor having a MIM (Metal-Insulator-Metal) structure, etc.

[0181] In the capacitor array of the present invention, from the viewpoint of thinning and increasing the area of ​​the capacitor unit and improving the mechanical properties of the capacitor unit such as rigidity and flexibility, it is preferred that the capacitor unit constitutes a capacitor with aluminum or other metal as the base material, and it is more preferred that the capacitor unit constitutes an electrolytic capacitor with aluminum or other metal as the base material.

[0182] The capacitor array of the present invention is used, for example, in a composite electronic component. Such a composite electronic component includes, for example, the capacitor array of the present invention and an electronic component electrically connected to the external electrode layer of the capacitor array of the present invention.

[0183] In the composite electronic component, the electronic component electrically connected to the external electrode layer may be a passive element, an active element, both a passive element and an active element, or a composite of a passive element and an active element.

[0184] As a passive element, an inductor etc. can be mentioned, for example.

[0185] Examples of active elements include a memory, a GPU (Graphical Processing Unit), a CPU (Central Processing Unit), an MPU (Micro Processing Unit), and a PMIC (Power Management IC).

[0186] When the capacitor array of the present invention is used for a composite electronic component, the capacitor array of the present invention is, for example, treated as a substrate for mounting the electronic component. Therefore, by setting the capacitor array of the present invention as a sheet as a whole, and then setting the electronic component mounted on the capacitor array of the present invention as a sheet, the capacitor array of the present invention and the electronic component can be electrically connected in the thickness direction via a through-hole conductor that penetrates the electronic component in the thickness direction. As a result, the passive components and active components as electronic components can be configured as batch modules.

[0187] For example, a switching regulator can be formed by electrically connecting the capacitor array of the present invention between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied.

[0188] In a composite electronic component, a circuit layer may be formed on one main surface of a capacitor matrix sheet having a plurality of capacitor arrays of the present invention laid out, and the circuit layer may be electrically connected to a passive element or an active element as the electronic component.

[0189] Alternatively, the capacitor array of the present invention may be disposed in a cavity pre-formed in a substrate, embedded in a resin, and then a circuit layer may be formed on the resin. Alternatively, passive or active elements as other electronic components may be mounted in other cavities of the substrate.

[0190] Alternatively, the capacitor array of the present invention may be mounted on a smooth carrier such as a wafer or glass, and after the outer layer is formed by resin, a circuit layer is formed, and on this basis, the circuit layer is electrically connected to passive elements or active elements serving as electronic components.

[0191] The following contents are disclosed in this specification.

[0192] <1>

[0193] A capacitor array, characterized in that:

[0194] The capacitor array includes:

[0195] a plurality of capacitor portions arranged in a plane in a plane direction orthogonal to the thickness direction; and

[0196] a sealing portion which seals the plurality of capacitor portions from two main surface sides of the plurality of capacitor portions which are opposite to each other in the thickness direction and is made of an insulating material,

[0197] The sealing portion is formed by stacking a plurality of sealing layers in the thickness direction.

[0198] The plurality of sealing layers include: a first sealing layer located closest to the capacitor portion in the thickness direction; and a second sealing layer located on the opposite side of the capacitor portion than the first sealing layer in the thickness direction and constituting two main surfaces of the sealing portion facing each other in the thickness direction.

[0199] <2>

[0200] The capacitor array according to <1>, wherein:

[0201] The capacitor unit includes: an anode plate having a porous layer on at least one of two main surfaces facing each other in the thickness direction; a dielectric layer provided on a surface of the porous layer; and a cathode layer provided on a surface of the dielectric layer.

[0202] <3>

[0203] The capacitor array according to <1> or <2>, wherein:

[0204] The insulating material constituting the first sealing layer includes an insulating resin.

[0205] <4>

[0206] The capacitor array according to <3>, wherein:

[0207] The insulating material constituting the first sealing layer further contains an inorganic filler.

[0208] <5>

[0209] The capacitor array according to <4>, wherein:

[0210] The median diameter D of the inorganic filler contained in the insulating material constituting the first sealing layer is 50 It is less than 10μm.

[0211] <6>

[0212] The capacitor array according to any one of <1> to <5>, wherein:

[0213] The insulating material constituting the second sealing layer includes an insulating resin.

[0214] <7>

[0215] The capacitor array according to <6>, wherein:

[0216] The insulating materials constituting the first sealing layer and the second sealing layer include insulating resins different from each other.

[0217] <8>

[0218] The capacitor array according to <6> or <7>, wherein:

[0219] The insulating material constituting the second sealing layer further contains an inorganic filler.

[0220] <9>

[0221] The capacitor array according to any one of <6> to <8>, wherein:

[0222] The insulating material constituting the second sealing layer further includes glass cloth.

[0223] <10>

[0224] The capacitor array according to any one of <1> to <9>, wherein:

[0225] The linear expansion coefficient of the second sealing layer in the thickness direction is smaller than the linear expansion coefficient of the first sealing layer in the thickness direction.

[0226] <11>

[0227] The capacitor array according to any one of <1> to <10>, wherein:

[0228] The first sealing layer includes a first insulating portion covering both main surfaces of the plurality of capacitor portions.

[0229] <12>

[0230] The capacitor array according to <11>, wherein:

[0231] In a region on one of the two main surfaces of the sealing portion, a maximum dimension of the first insulating portion of the first sealing layer and a maximum dimension of the second sealing layer in the thickness direction are different from each other.

[0232] <13>

[0233] The capacitor array according to <12>, wherein:

[0234] In a region on one of the two main surfaces of the sealing portion, a maximum dimension of the first insulating portion of the first sealing layer in the thickness direction is larger than a maximum dimension of the second sealing layer in the thickness direction.

[0235] <14>

[0236] The capacitor array according to <13>, wherein:

[0237] In a region on one of the two main surfaces of the sealing portion, a ratio of a maximum dimension of the first insulating portion of the first sealing layer in the thickness direction to a maximum dimension of the second sealing layer in the thickness direction is 110% or more.

[0238] <15>

[0239] The capacitor array according to <13> or <14>, wherein:

[0240] In a region on one of the two main surfaces of the sealing portion, a maximum dimension of the first insulating portion of the first sealing layer in the thickness direction is 5 μm or more.

[0241] <16>

[0242] The capacitor array according to any one of <13> to <15>, wherein:

[0243] In a region on one of the two main surfaces of the sealing portion, a maximum dimension of the second sealing layer in the thickness direction is 100 μm or less.

[0244] <17>

[0245] The capacitor array according to any one of <13> to <16>, wherein:

[0246] In a region on one of the two main surfaces of the sealing portion, a ratio of a minimum dimension of the first insulating portion of the first sealing layer in the thickness direction to a maximum dimension of the first insulating portion of the first sealing layer in the thickness direction is 50% or less.

[0247] <18>

[0248] The capacitor array according to any one of <11> to <17>, wherein:

[0249] The first sealing layer further includes a second insulating portion that separates the plurality of capacitor portions into individual capacitor portions.

[0250] <19>

[0251] The capacitor array according to any one of <11> to <18>, wherein:

[0252] The first sealing layer further includes a third insulating portion penetrating each of the plurality of capacitor portions in the thickness direction.

[0253] <20>

[0254] The capacitor array according to any one of <1> to <19>, wherein:

[0255] The capacitor array further includes a through-hole conductor penetrating the capacitor portion and the sealing portion in the thickness direction.

[0256] Description of Reference Numerals

[0257] 1. capacitor array; 10. capacitor unit; 20. anode plate; 21. core; 22. porous layer; 30. dielectric layer; 40. cathode layer; 41. solid electrolyte layer; 42. conductor layer; 42A. conductive resin layer; 42B. metal layer; 50. shielding layer; 60. sealing unit; 60A. first sealing layer; 60B. second sealing layer; 61. first insulating unit; 62. second insulating unit; 63. third insulating unit; 70A, 70B, through-hole conductor ; 71A, 71B, through hole; 72, anode connection layer; 73, via conductor; 80A, 80B, external electrode layer; 90A, 90B, resin filling portion; da1, maximum dimension of the first insulating portion of the first sealing layer in the thickness direction; da2, minimum dimension of the first insulating portion of the first sealing layer in the thickness direction; db1, maximum dimension of the second sealing layer in the thickness direction; G, glass fiber cloth; T, thickness direction; U, first direction; V, second direction.

Claims

1. A capacitor array, characterized in that: The capacitor array includes: a plurality of capacitor portions arranged in a plane in a plane direction orthogonal to the thickness direction; and a sealing portion which seals the plurality of capacitor portions from two main surface sides of the plurality of capacitor portions which are opposite to each other in the thickness direction and is made of an insulating material, The sealing portion is formed by stacking a plurality of sealing layers in the thickness direction. The plurality of sealing layers include: a first sealing layer located closest to the capacitor portion in the thickness direction; and a second sealing layer located on the opposite side of the capacitor portion than the first sealing layer in the thickness direction and constituting two main surfaces of the sealing portion facing each other in the thickness direction.

2. The capacitor array according to claim 1, wherein: The capacitor section includes: an anode plate having a porous layer on at least one of two main surfaces facing each other in the thickness direction; a dielectric layer disposed on a surface of the porous layer; and a cathode layer disposed on the surface of the dielectric layer.

3. The capacitor array according to claim 1 or 2, wherein: The insulating material constituting the first sealing layer includes an insulating resin.

4. The capacitor array according to claim 3, wherein: The insulating material constituting the first sealing layer further contains an inorganic filler.

5. The capacitor array according to claim 4, wherein: The median diameter D of the inorganic filler contained in the insulating material constituting the first sealing layer is 50 It is less than 10μm.

6. The capacitor array according to any one of claims 1 to 5, wherein: The insulating material constituting the second sealing layer includes an insulating resin.

7. The capacitor array according to claim 6, wherein: The insulating materials constituting the first sealing layer and the second sealing layer include insulating resins different from each other.

8. The capacitor array according to claim 6 or 7, wherein: The insulating material constituting the second sealing layer further contains an inorganic filler.

9. The capacitor array according to any one of claims 6 to 8, wherein: The insulating material constituting the second sealing layer further includes glass cloth.

10. The capacitor array according to any one of claims 1 to 9, wherein: A linear expansion coefficient of the second sealing layer in the thickness direction is smaller than a linear expansion coefficient of the first sealing layer in the thickness direction.

11. The capacitor array according to any one of claims 1 to 10, wherein: The first sealing layer includes a first insulating portion covering both main surfaces of the plurality of capacitor portions.

12. The capacitor array according to claim 11, wherein: In a region on one of the two main surfaces of the sealing portion, a maximum dimension of the first insulating portion of the first sealing layer and a maximum dimension of the second sealing layer in the thickness direction are different from each other.

13. The capacitor array according to claim 12, wherein: In a region on one of the two main surfaces of the sealing portion, a maximum dimension of the first insulating portion of the first sealing layer in the thickness direction is larger than a maximum dimension of the second sealing layer in the thickness direction.

14. The capacitor array according to claim 13, wherein: In a region on one of the two main surfaces of the sealing portion, a ratio of a maximum dimension of the first insulating portion of the first sealing layer in the thickness direction to a maximum dimension of the second sealing layer in the thickness direction is 110% or more.

15. The capacitor array according to claim 13 or 14, wherein: In a region on one of the two main surfaces of the sealing portion, a maximum dimension of the first insulating portion of the first sealing layer in the thickness direction is 5 μm or more.

16. The capacitor array according to any one of claims 13 to 15, wherein: In a region on one of the two main surfaces of the sealing portion, a maximum dimension of the second sealing layer in the thickness direction is 100 μm or less.

17. The capacitor array according to any one of claims 13 to 16, wherein: In a region on one of the two main surfaces of the sealing portion, a ratio of a minimum dimension of the first sealing layer in the thickness direction of the first insulating portion to a maximum dimension of the first sealing layer in the thickness direction of the first insulating portion is 50% or less.

18. The capacitor array according to any one of claims 11 to 17, wherein: The first sealing layer further includes a second insulating portion that separates the plurality of capacitor portions into individual capacitor portions.

19. The capacitor array according to any one of claims 11 to 18, wherein: The first sealing layer further includes a third insulating portion penetrating each of the plurality of capacitor portions in the thickness direction.

20. The capacitor array according to any one of claims 1 to 19, wherein: The capacitor array further includes a through-hole conductor penetrating the capacitor portion and the sealing portion in the thickness direction.

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