Diamond wire busbar and diamond wire

Abstract

The application provides a diamond wire bus and a diamond wire. The diamond wire bus comprises a base body and a coating layer covering at least part of the surface of the base body. The coating layer comprises: a first metal layer covering at least part of the surface of the base body; a second metal layer covering at least part of the surface of the first metal layer away from the base body; and a third metal layer covering at least part of the surface of the second metal layer away from the first metal layer. The first metal layer comprises a first metal, the second metal layer comprises a second metal, and the third metal layer comprises a third metal and a fourth metal. In the direction away from the second metal layer, the content of the third metal in the third metal layer increases. The fourth metal and the second metal are the same kind of metal. The outer surface of the third metal layer has a lubricating effect and can maintain sufficient strength and not fall off. The inner surface is combined with the second metal layer, so that the cutting process of hard and brittle materials can be continuously carried out, and the cutting yield is improved.

Description

Technical Field

[0001] This application belongs to the field of diamond wire technology, specifically relating to diamond wire busbars and diamond wire. Background Technology

[0002] Diamond wire cutting technology, with its advantages of high yield, high cutting efficiency, low material loss, and low environmental pollution, is gradually replacing traditional internal circular saws and slurry cutting techniques in the cutting of hard and brittle materials such as semiconductor silicon wafers and sapphire, becoming the mainstream cutting process. Compared to diamond wire with high-carbon steel wire as the core, diamond wire with tungsten wire as the core avoids problems such as wire breakage due to excessive temperature during cutting due to the extremely high melting point of tungsten wire, while also greatly improving strength.

[0003] However, since diamond wire and diamond wire busbar with tungsten wire as core are usually coated, the poor bonding between the coatings leads to a high wire breakage rate during the drawing and cutting process.

[0004] How to design a diamond wire busbar with tungsten wire as the core and diamond wire that can achieve a good yield in the cutting process is a technical problem that needs to be solved. Summary of the Invention

[0005] This application provides a diamond wire busbar and diamond wire, aiming to solve the problem of high wire breakage rate in the cutting process of existing tungsten wire diamond wire busbars.

[0006] The first embodiment of this application provides a diamond wire busbar, including a substrate and a covering layer covering at least a portion of the surface of the substrate, the covering layer comprising:

[0007] A first metal layer is disposed on at least a portion of the surface of the substrate;

[0008] A second metal layer is disposed on at least a portion of the surface of the first metal layer away from the substrate;

[0009] A third metal layer is disposed on at least a portion of the surface of the second metal layer away from the first metal layer;

[0010] Wherein, the first metal layer includes a first metal, the second metal layer includes a second metal, and the third metal layer includes a third metal and a fourth metal;

[0011] Along the direction away from the second metal layer, the content of the third metal in the third metal layer increases; the fourth metal and the second metal are the same metal.

[0012] In some embodiments, along the radial direction of the diamond wire generatrix, the substrate has a maximum size Dμm, and the cladding layer has a first size L1μm, satisfying:

[0013] D = a·L1;

[0014] Where 'a' is the first thickness coefficient, satisfying 30≤a≤105.

[0015] In some embodiments, the first dimension L1 satisfies: 0.25≤L1≤1.2.

[0016] In some embodiments, the maximum size Dμm satisfies: 16≤D≤50.

[0017] In some embodiments, along the radial direction of the diamond wire busbar, the first metal layer has a second dimension L2μm, the second metal layer has a third dimension L3μm, and the third metal layer has a fourth dimension L4μm, satisfying at least one of the following conditions:

[0018] i)L3 = b·L2;

[0019] ii) L3 = c·L4;

[0020] Where b is the second thickness coefficient, satisfying 5≤b≤15, and c is the third thickness coefficient, satisfying 2≤c≤8.

[0021] In some embodiments, the second dimension L2μm satisfies: 0.01≤L2≤0.12.

[0022] In some embodiments, the third dimension L3μm satisfies: 0.01≤L3≤2.

[0023] In some embodiments, the fourth dimension L4μm satisfies: 0.01≤L4≤1.

[0024] In some embodiments, the mass percentage of the first metal in the first metal layer is 95% to 100%.

[0025] In some embodiments, the second metal accounts for 95% to 100% of the mass percentage of the second metal layer.

[0026] In some embodiments, the third metal has a mass percentage of 5 to 10% on the side of the third metal layer closest to the second metal layer.

[0027] In some embodiments, the mass percentage of the third metal on the side of the third metal layer away from the second metal layer is 30-35%.

[0028] In some embodiments, the first metal includes nickel.

[0029] In some embodiments, the second metal includes copper.

[0030] In some embodiments, the third metal includes at least one of zinc, nickel, and tin.

[0031] In some embodiments, the fourth metal includes copper.

[0032] The second embodiment of this application provides a method for preparing a diamond wire busbar, comprising the following steps:

[0033] Provide a matrix;

[0034] A first metal layer is formed on at least a portion of the surface of the substrate;

[0035] A second metal layer is formed on at least a portion of the surface of the first metal layer on the side away from the substrate;

[0036] A third metal layer is formed on at least a portion of the surface of the second metal layer on the side away from the first metal layer to obtain an intermediate product;

[0037] The intermediate product is drawn to obtain the diamond wire busbar.

[0038] In some embodiments, the step of providing a substrate further includes: giving the substrate a first diameter D1μm;

[0039] The step of forming a first metal layer on at least a portion of the surface of the substrate further includes: giving the first metal layer a first thickness T1 μm;

[0040] The step of forming a second metal layer on at least a portion of the surface of the first metal layer on the side away from the substrate further includes: giving the second metal layer a second thickness T2μm;

[0041] The step of forming a third metal layer on at least a portion of the surface of the second metal layer on the side away from the first metal layer further includes: giving the third metal layer a third thickness T3μm;

[0042] The step of drawing the intermediate product further includes: giving the substrate a second diameter D2μm, the first metal layer a fourth thickness T4μm, the second metal layer a fifth thickness T5μm, and the third metal layer a sixth thickness T6μm;

[0043] Where D1 < D2, T1 < T4, T2 < T5, T3 < T6.

[0044] In some embodiments, the first thickness T1μm and the fourth thickness T4μm satisfy: T1=(1.5~2.5)T4.

[0045] In some embodiments, the second thickness T2μm and the fifth thickness T5μm satisfy: T2=(1.8~2)T5.

[0046] In some embodiments, the third thickness T3μm and the sixth thickness T6μm satisfy: T3=(2~3)T6.

[0047] In some embodiments, the first diameter D1μm satisfies: 50≤D1≤100.

[0048] In some embodiments, the second diameter D2μm satisfies: 10≤D2≤100.

[0049] In some embodiments, the first thickness T1μm satisfies: 0.02≤T1≤0.25.

[0050] In some embodiments, the second thickness T2μm satisfies: 0.2≤T2≤1.5.

[0051] In some embodiments, the third thickness T3μm satisfies: 0.1≤T3≤0.6.

[0052] In some embodiments, the fourth thickness T4μm satisfies: 0.01≤T4≤0.12.

[0053] In some embodiments, the fifth thickness T5μm satisfies: 0.01≤T5≤0.8.

[0054] In some embodiments, the sixth thickness T6μm satisfies: 0.03≤T6≤0.3.

[0055] The third embodiment of this application provides a diamond wire, including a diamond wire main body, a polishing layer and a first particle as described in any of the above embodiments. The polishing layer covers at least a portion of the surface of the diamond wire main body, and the first particle is dispersed in the polishing layer, with at least a portion of the first particle protruding from the polishing layer.

[0056] In some embodiments, a second particle is dispersed within the grinding layer; the second particle is disposed between adjacent first particles.

[0057] In some embodiments, the thickness of the wear layer is 0.1 μm to 100 μm.

[0058] In some embodiments, the average particle size of the first particle is 10 μm to 100 μm.

[0059] In some embodiments, the average particle size of the second particle is 2 μm to 10 μm.

[0060] In some embodiments, a fourth metal layer is disposed between the diamond wire busbar and the grinding layer; the fourth metal layer comprises nickel.

[0061] This application provides a diamond wire busbar, including a substrate and a cladding layer covering at least a portion of the surface of the substrate. The cladding layer includes: a first metal layer covering at least a portion of the surface of the substrate; a second metal layer covering at least a portion of the surface of the first metal layer away from the substrate; and a third metal layer covering at least a portion of the surface of the second metal layer away from the first metal layer. The first metal layer includes a first metal, the second metal layer includes a second metal, and the third metal layer includes a third metal and a fourth metal. Along the direction away from the second metal layer, the content of the third metal in the third metal layer increases progressively. The fourth metal and the second metal are the same metal. In the diamond wire busbar provided in this application, the first metal layer can improve the bonding force between the second metal layer and the substrate; the second metal layer is located between the first metal layer and the third metal layer, and can play a role in lubrication and coordinating the deformation of the substrate during the drawing and cutting processes; the outer surface of the third metal layer is an alloy material formed by mixing the third metal and the fourth metal, which has high hardness and can maintain sufficient strength to prevent it from falling off while playing a lubricating role; the inner surface has a low content of the third metal, and the physicochemical properties of the material are similar to those of the second metal layer, which can bond with the second metal layer just right, so that the drawing process of the diamond wire or diamond wire busbar and the subsequent cutting process can be carried out continuously, thereby reducing the wire breakage rate of the diamond wire busbar in the drawing and cutting processes, obtaining a finished product diameter with better consistency, and improving the cutting yield. Attached Figure Description

[0062] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0063] Figure 1 This is a schematic diagram of the main cross-sectional structure of a diamond wire busbar provided in an embodiment of this application;

[0064] Figure 2 for Figure 1 A side view cross-sectional structural diagram of the medium-diameter diamond wire busbar;

[0065] Figure 3 This is a schematic diagram of the front cross-sectional structure before drawing in a method for preparing a diamond wire busbar provided in this application embodiment;

[0066] Figure 4 This is a schematic diagram of the front cross-sectional structure of a diamond wire busbar after drawing, provided in an embodiment of this application.

[0067] Figure 5 This is a schematic diagram of the front cross-sectional structure of a diamond wire provided in an embodiment of this application;

[0068] Figure 6 for Figure 5 A side view cross-sectional diagram of the structure of the diamond wire.

[0069] Figure label:

[0070] 100-Substrate, 200-Covering layer, 201-First metal layer, 202-Second metal layer, 203-Third metal layer, 300-Abrasive layer, 301-First particle, 302-Second particle, 400-Fourth metal layer. Detailed Implementation

[0071] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0072] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows for mutual communication; they can refer to a direct connection, an indirect connection through an intermediate medium, or an indirect connection through a pipe or conduit; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances. In the description of this application, "multiple" means two or more, unless otherwise expressly and specifically limited. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more features.

[0073] See Figure 1 and Figure 2 The first embodiment of this application provides a diamond wire busbar, including a substrate 100 and a cladding layer 200 covering at least a portion of the surface of the substrate 100. The cladding layer 200 includes:

[0074] A first metal layer 201 is disposed on at least a portion of the surface of the substrate 100;

[0075] The second metal layer 202 is disposed on at least a portion of the surface of the first metal layer 201 away from the substrate 100;

[0076] A third metal layer 203 is disposed on at least a portion of the surface of the second metal layer 202 away from the first metal layer 201;

[0077] Wherein, the first metal layer 201 includes a first metal, the second metal layer 202 includes a second metal, and the third metal layer 203 includes a third metal and a fourth metal;

[0078] Along the direction away from the second metal layer 202, the content of the third metal in the third metal layer 203 increases; the fourth metal and the second metal are the same metal.

[0079] In the diamond wire busbar provided in this application, the first metal layer 201 can improve the bonding force between the second metal layer 202 and the substrate 100; the second metal layer 202 is located between the first metal layer 201 and the third metal layer 203, and can play a role in lubrication and coordinating the deformation of the substrate 100 in the subsequent drawing and cutting processes; the outer surface of the third metal layer 203 is an alloy material formed by mixing the third metal and the fourth metal, which has high hardness and can maintain sufficient strength to prevent it from falling off while playing a lubricating role; the inner surface has a low content of the third metal, and the physicochemical properties of the material are similar to those of the second metal layer 202, which can be combined with the second metal layer 202. This allows the drawing process of the diamond wire or diamond wire busbar and the subsequent cutting process to be carried out continuously, thereby reducing the wire breakage rate of the diamond wire busbar in the drawing and cutting processes, obtaining a finished product diameter with better consistency, and improving the cutting yield.

[0080] In some embodiments, such as Figure 1 As shown, along the radial direction of the diamond wire generatrix (i.e., the first direction X), the substrate 100 has a maximum size Dμm, and the cladding layer 200 has a first size L1μm, satisfying:

[0081] D = a·L1;

[0082] Where 'a' is the first thickness coefficient, satisfying 30≤a≤105.

[0083] It is understandable that the value of the first thickness coefficient 'a' can be any value or a range between any two of 30, 40, 50, 60, 70, 80, 90, 100, and 105. The cladding layer 200 covers the substrate 100, enabling the diamond wire mainframe to have good ductility in subsequent diamond wire preparation processes, while also possessing good cutting force after the final diamond wire is formed. Furthermore, by limiting the size ratio between the cladding layer 200 and the substrate 100, it is possible to ensure that the diamond wire mainframe has ideal strength while maintaining good diameter consistency after subsequent electroplating and cold drawing processes.

[0084] In some embodiments, the first dimension L1 satisfies: 0.25≤L1≤1.2.

[0085] It is understood that the value of the first dimension L1 (unit: μm) can be any value or a range between any two of 0.25, 0.5, 0.75, 1.0, and 1.2. When the first dimension L1 meets the above value range, it can further ensure that the diamond wire busbar has good ductility and overall ideal strength.

[0086] In some embodiments, the maximum size Dμm satisfies: 16≤D≤50.

[0087] Generally, the diamond wire parent wire and the radial cross-section of the diamond wire can be circular or elliptical, preferably circular. See also Figure 1 When the radial section of the substrate 100 is circular, its maximum dimension D is the diameter of the radial section of the substrate 100. It can be understood that the value of the maximum dimension D (in μm) can be any value or a range between any two of 16, 20, 25, 30, 35, 40, 45, and 50; furthermore, the value of the maximum dimension D (in μm) can be any value or a range between any two of 24, 28, 32, 36, and 40.

[0088] In some embodiments, along the radial direction of the diamond wire generatrix, the first metal layer has a second dimension L2μm, the second metal layer has a third dimension L3μm, and the third metal layer has a fourth dimension L4μm, satisfying at least one of the following conditions:

[0089] i)L3 = b·L2;

[0090] ii) L3 = c·L4;

[0091] Where b is the second thickness coefficient, satisfying 5≤b≤15, and c is the third thickness coefficient, satisfying 2≤c≤8.

[0092] It is understandable that the value of the second thickness coefficient b can be any value from 5, 7, 9, 11, 13, 15, or any range between any two values. When the second thickness coefficient b, i.e., the ratio of the third dimension L3 to the second dimension L2, satisfies the above value range, the diamond wire matrix can have good ductility and overall ideal strength. The value of the third thickness coefficient c can be any value from 2, 3, 4, 5, 6, 7, 8, or any range between any two values. When the third thickness coefficient c, i.e., the ratio of the third dimension L3 to the fourth dimension L4, satisfies the above value range, it can ensure that the outer surface of the diamond wire matrix has ideal hardness and overall ideal strength.

[0093] In some embodiments, the second dimension L2μm satisfies: 0.01≤L2≤0.12, and more preferably 0.02≤L1≤0.08.

[0094] It is understood that the value of the second dimension L2 (unit: μm) can be any value or a range between any two values ​​from 0.01, 0.03, 0.05, 0.07, 0.09, 0.11, and 0.12; furthermore, the value of the second dimension L2 (unit: μm) can be any value or a range between any two values ​​from 0.02, 0.04, 0.06, and 0.08.

[0095] In some embodiments, the third dimension L3μm satisfies: 0.01≤L3≤2, and more preferably 0.2≤L3≤0.4.

[0096] It is understood that the value of the third dimension L3 (unit: μm) can be any value or a range between any two values ​​from 0.01, 0.05, 0.1, 0.5, 0.7, 0.9, 1.1, 1.3, 1.5, 1.7, 2; furthermore, the value of the third dimension L3 (unit: μm) can be any value or a range between any two values ​​from 0.2, 0.25, 0.3, 0.35, 0.4.

[0097] In some embodiments, the fourth dimension L4μm satisfies: 0.01≤L4≤1, and more preferably 0.15≤L4≤0.3.

[0098] It is understood that the value of the fourth dimension L4 (unit: μm) can be any value or a range between any two values ​​from 0.01, 0.05, 0.1, 0.5, 0.7, 0.9, 1; furthermore, the value of the fourth dimension L4 (unit: μm) can be any value or a range between any two values ​​from 0.15, 0.18, 0.21, 0.24, 0.27, 0.3.

[0099] When the maximum dimension D of the base 100, the second dimension L2, the third dimension L3, and the fourth dimension L4 meet the above-mentioned value range, it can ensure that the diamond wire busbar achieves a balance in terms of overall strength and cold drawing coordination.

[0100] In some embodiments, the first metal has a mass percentage of 95% to 100% in the first metal layer 201.

[0101] It is understood that the mass percentage of the first metal in the first metal layer 201 can be any value or a range between any two of 95%, 96%, 97%, 98%, 99%, and 100%.

[0102] In some embodiments, the second metal has a mass percentage of 95% to 100% in the second metal layer 202.

[0103] It is understood that the mass percentage of the second metal in the second metal layer 202 can be any value or a range between any two of 95%, 96%, 97%, 98%, 99%, and 100%.

[0104] In some embodiments, the third metal has a mass percentage of 5 to 10% on the side of the third metal layer 203 closest to the second metal layer 202.

[0105] It is understood that the mass percentage of the third metal in the third metal layer 203 on the side closer to the second metal layer 202 can be any value of 5%, 6%, 7%, 8%, 9%, or 10%, or a range between any two values. When the mass percentage of the third metal in the third metal layer 203 on the side closer to the second metal layer 202 meets the above-mentioned range, the physicochemical properties of the side of the third metal layer 203 closer to the second metal layer 202 can be made sufficiently similar to those of the second metal layer 202, thereby ensuring that the third metal layer 203 and the second metal layer 202 have good bonding strength.

[0106] In some embodiments, the mass percentage of the third metal on the side of the third metal layer 203 away from the second metal layer is 30-35%.

[0107] It is understood that the mass percentage of the third metal in the third metal layer 203 on the side away from the second metal layer 202 can be any value or a range between any two of 30%, 31%, 32%, 33%, 34%, and 35%. When the mass percentage of the third metal in the third metal layer 203 on the side away from the second metal layer 202 meets the above-mentioned range, the outer surface of the entire coating layer 200 has ideal alloy strength, avoiding problems such as peeling or deformation in subsequent processes.

[0108] In some embodiments, the first metal includes nickel.

[0109] In some embodiments, the second metal includes copper.

[0110] In some embodiments, the third metal includes at least one of zinc, nickel, and tin.

[0111] In some embodiments, the fourth metal includes copper.

[0112] The second embodiment of this application provides a method for preparing a diamond wire busbar, comprising the following steps:

[0113] Provide substrate 100;

[0114] A first metal layer 201 is formed on at least a portion of the surface of the substrate 100;

[0115] A second metal layer 202 is formed on at least a portion of the surface of the first metal layer 201 on the side away from the substrate 100;

[0116] A third metal layer 203 is formed on at least a portion of the surface of the second metal layer 202 on the side away from the first metal layer 201 to obtain an intermediate product;

[0117] The intermediate product is drawn to obtain the diamond wire main wire.

[0118] In some embodiments, the step of providing the substrate 100 further includes: giving the substrate 100 a first diameter D1μm;

[0119] The step of forming a first metal layer 201 on at least a portion of the surface of the substrate 100 further includes: giving the first metal layer 201 a first thickness T1 μm;

[0120] The step of forming a second metal layer 202 on at least a portion of the surface of the first metal layer 201 away from the substrate further includes: giving the second metal layer 202 a second thickness T2μm;

[0121] The step of forming a third metal layer 203 on at least a portion of the surface of the second metal layer 202 on the side away from the first metal layer 201 further includes: giving the third metal layer 203 a third thickness T3μm;

[0122] The step of drawing the intermediate product further includes: giving the substrate 100 a second diameter D2μm, the first metal layer 201 a fourth thickness T4μm, the second metal layer 202 a fifth thickness T5μm, and the third metal layer 203 a sixth thickness T6μm.

[0123] Where D1 < D2, T1 < T4, T2 < T5, T3 < T6.

[0124] In some embodiments, the first thickness T1μm and the fourth thickness T4μm satisfy: T1=(1.5~2.5)T4.

[0125] In some embodiments, the second thickness T2μm and the fifth thickness T5μm satisfy: T2=(1.8~2)T5.

[0126] In some embodiments, the third thickness T3μm and the sixth thickness T6μm satisfy: T3=(2~3)T6.

[0127] When the thicknesses of the first metal layer 201, the second metal layer 202, and the third metal layer 203 satisfy the above-mentioned value relationship before and after drawing, the drawing process of diamond wire busbar has high drawing efficiency and can avoid problems such as wire breakage or uneven thickness during the drawing process.

[0128] In some embodiments, the first diameter D1μm satisfies: 50≤D1≤100.

[0129] It is understandable that the value of the first diameter D1 (unit: μm) can be any value among 50, 60, 70, 80, 90, and 100, or a range between any two values.

[0130] In some embodiments, the second diameter D2μm satisfies: 16≤D2≤50.

[0131] Understandably, the value of the second diameter D2 (in μm) can be any value or a range between any two values ​​from 16, 20, 25, 30, 35, 40, 45, 50.

[0132] In some embodiments, the first thickness T1μm satisfies: 0.02≤T1≤0.25.

[0133] It is understandable that the value of the first thickness T1 (unit: μm) can be any value among 0.02, 0.05, 0.1, 0.15, 0.2, and 0.25, or a range between any two values.

[0134] In some embodiments, the second thickness T2μm satisfies: 0.2≤T2≤1.5.

[0135] It is understandable that the value of the second thickness T2 (unit: μm) can be any value among 0.2, 0.7, 1.0, 1.2, 1.5 or a range between any two values.

[0136] In some embodiments, the third thickness T3μm satisfies: 0.1≤T3≤0.6.

[0137] It is understandable that the value of the third thickness T3 (unit: μm) can be any value among 0.1, 0.2, 0.3, 0.4, 0.5, and 0.6, or a range between any two values.

[0138] In some embodiments, the fourth thickness T4μm satisfies: 0.01≤T4≤0.12.

[0139] It is understandable that the value of the fourth thickness T4 (unit: μm) can be any value or a range between any two values ​​from 0.01, 0.03, 0.05, 0.07, 0.09, and 0.12.

[0140] In some embodiments, the fifth thickness T5μm satisfies: 0.1≤T5≤0.8.

[0141] It is understandable that the value of the fifth thickness T5 (unit: μm) can be any value or a range between any two values ​​from 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8.

[0142] In some embodiments, the sixth thickness T6μm satisfies: 0.03≤T6≤0.3.

[0143] It is understandable that the value of the sixth thickness T6 (unit: μm) can be any value or a range between any two of 0.03, 0.1, 0.15, 0.2, 0.25, and 0.3.

[0144] When the first thickness T1, the second thickness T2, the third thickness T3, the fourth thickness T4, the fifth thickness T5, and the sixth thickness T6 meet the above value range, it can further ensure that the drawing process of diamond wire busbar has high drawing efficiency and avoid problems such as wire breakage or uneven thickness during the drawing process.

[0145] The third embodiment of this application provides a diamond wire, see [link]. Figure 3 and Figure 4 The first particle 301 includes the diamond wire busbar and the grinding layer 300 and the first particle 301 in any of the above embodiments. The grinding layer 300 covers at least a portion of the surface of the diamond wire busbar, and the first particle 301 is dispersed in the grinding layer 300. At least a portion of the first particle 301 protrudes from the grinding layer 300 and is used to assist the grinding layer 300 in cutting silicon wafers and the like in the subsequent cutting process.

[0146] In some embodiments, a second particle 302 is dispersed within the grinding layer 300; the second particle 302 is disposed between adjacent first particles 301.

[0147] In some embodiments, the grinding layer 300 contains a second particle 302; the average particle size of the second particle is 2 μm to 10 μm.

[0148] It is understood that the average particle size (unit: μm) of the second particle 302 can be any value or a range between any two of the following: 2, 3, 4, 5, 6, 7, 8, 9, 10. When the average particle size of the second particle 302 meets the above-mentioned range, the second particle 302 can be uniformly dispersed in the grinding layer 300, increasing the hardness of the grinding layer 300 while increasing the bonding ability between the grinding layer 300 and the diamond wire or the fourth metal layer 400, thereby increasing the service life and cutting efficiency of the diamond wire.

[0149] In some embodiments, the thickness of the wear layer 300 is 0.1 μm to 100 μm.

[0150] It is understandable that the thickness of the grinding layer 300 (unit: μm) can be any value or a range between any two of 0.1, 1, 5, 10, 20, 50, 80, and 100. When the thickness of the grinding layer 300 meets the above range, it avoids the problem that if the thickness of the grinding layer 300 is too low, its consolidation effect on the first particle 301 will be weakened, resulting in a high shedding rate of the first particle 301 during diamond wire cutting and a decrease in cutting ability. At the same time, if the thickness of the grinding layer 300 is too high, it will lead to a low grinding yield of the first particle 301, reducing the cutting ability of the diamond wire.

[0151] In some embodiments, the average particle size of the first particle 301 is 10 μm to 100 μm.

[0152] The first particle 301 has an irregular shape. It can be understood that the average particle size of the first particle 301 (unit: μm) can be any value or a range between any two values ​​from 10, 20, 30, 40, 50, 60, 70, 80, 90, 100.

[0153] See Figure 5 and Figure 6 In some embodiments, a fourth metal layer 400 is provided between the diamond wire busbar and the grinding layer 300 to further enhance the bonding force between the diamond wire busbar and the grinding layer 300; the fourth metal layer 400 includes metallic nickel, and it is understood that the fourth metal layer 400 can be a pure metallic nickel layer or a nickel alloy containing a small amount of iron or cobalt.

[0154] It is understood that the tungsten wire mentioned in this application is a metal wire with a tungsten mass content of ≥95%, the copper layer is a metal wire with a copper mass content of ≥95%, and the nickel layer is a metal wire with a nickel mass content of ≥95%. The raw materials for the alloy layers mentioned in this application, such as the copper-zinc alloy layer, copper-tin alloy layer, copper-zinc-tin alloy layer, copper-zinc-nickel alloy layer, nickel-cobalt alloy layer, and nickel-iron alloy layer, can all be obtained commercially or prepared by thermal diffusion. Taking the copper-zinc alloy layer as an example, preparing the copper-zinc alloy layer by thermal diffusion may include the following steps:

[0155] S1. Electroplating a zinc layer onto the surface of the copper layer;

[0156] S2. The above composite metal layer is heated to allow zinc to diffuse into the copper layer, resulting in a copper-zinc alloy layer.

[0157] The diamond wire busbar and diamond wire provided in this application are described below with reference to specific embodiments:

[0158] Example 1

[0159] This embodiment 1 provides a diamond wire busbar, see [link]. Figure 1 and Figure 2 It includes a substrate 100 and a coating layer 200 covering the surface of the substrate 100. Along the direction away from the substrate 100, the coating layer 200 includes a first metal layer 201, a second metal layer 202 and a third metal layer 203 stacked in sequence.

[0160] The substrate 100 is made of pure tungsten wire with a diameter of 60 μm; the first metal layer 201 is made of nickel with a thickness of 0.05 μm; the second metal layer 202 is made of pure copper with a thickness of 0.45 μm; and the third metal layer 203 is made of copper-zinc alloy with a thickness of 0.4 μm.

[0161] The diamond wire busbar provided in this embodiment is prepared through the following steps:

[0162] (1) Pretreatment: The substrate 100 was subjected to a first alkaline wash, a second water wash, an acid wash, and a third water wash. The alkaline wash solution (solvent is water) consisted of 30 g / L sodium hydroxide, 10 g / L sodium metasilicate, and 10 g / L sodium chloride. The alkaline wash time was 50 s, the temperature was 55 ℃, and the ultrasonic frequency was 30 Hz. The first water wash used pure water with a pH of 6.2 to 6.5 and a conductivity of ≤2 μS / cm. The acid wash solution (solvent is water) consisted of 20 g / L hydrochloric acid. The acid wash time was 30 s and the temperature was 25 ℃. The second water wash used deionized water with a pH of 6.5 to 7.0 and a conductivity of ≤2.5 μS / cm to obtain a cleaned substrate 100.

[0163] (2) First electroplating: Place the cleaned substrate 100 in the first plating solution to deposit a nickel layer. The first plating solution includes the following components: hydrochloric acid 20-150 ml / L, nickel chloride 50-200 g / L, pH value 0.5-2.0, electroplating temperature 45-60℃, and current density 20-40 A / dm³. 2 ;

[0164] (3) Second electroplating: The nickel-plated substrate 100 is placed in the second plating solution to deposit a copper layer. The second plating solution includes the following components: potassium pyrophosphate 100-500 g / L, copper pyrophosphate 10-100 g / L, pH value 7.0-9.0, electroplating temperature 30-50℃, and current density 1-20 A / dm³. 2 ;

[0165] (4) Third electroplating: The substrate 100, which is plated with nickel and copper layers, is placed in the third plating solution to deposit a zinc layer, thus obtaining the raw material busbar. The third plating solution includes the following components: zinc sulfate 100-400 g / L, pH value 1.0-3.0, electroplating temperature 35-55℃, and current density 1-20 A / dm³. 2 ;

[0166] (5) Washing and drying: The raw material busbar prepared in the above steps is washed with pure water at a temperature of 50°C. The washed raw material busbar is then dried in a heated air box for 5 to 30 seconds at a temperature of ≤150°C.

[0167] (6) Thermal diffusion treatment: The raw material busbar is placed in a heating furnace and heated at 400°C for 8 minutes to allow the zinc layer to be incorporated into the copper layer. After heating, the material is quickly cooled to room temperature to obtain the diamond wire busbar.

[0168] Based on the aforementioned diamond wire busbar, a fourth metal layer 400 and a polishing layer 300 are electroplated to form the diamond wire. See [link to documentation]. Figure 3 The fourth metal layer 400 covers the surface of the diamond wire mother wire, and the grinding layer 300 covers the surface of the fourth metal layer 400. The first particle 301 is distributed in the grinding layer 300, and the second particle 302 is dispersed in the grinding layer 300.

[0169] Examples 2-18

[0170] The diamond wire busbar and diamond wire structure provided in Examples 2 to 18 are the same as those in Example 1, except that the dimensional parameters of the substrate 100 and the covering layer 200 are adjusted.

[0171] Comparative Examples 1-9

[0172] The diamond wire busbars and diamond wire structures provided in Comparative Examples 1 to 9 are consistent with those in Example 1, except that the dimensional parameters of the substrate 100 and the covering layer 200 are adjusted.

[0173] The values ​​of relevant parameters of the diamond wire busbar in Examples 1-18 and Comparative Examples 1-9 are shown in Table 1.

[0174] Table 1

[0175]

[0176]

[0177] The diamond wires in Examples 1-18 and Comparative Examples 1-9 were subjected to strength tests, and the test methods were as follows:

[0178] Wire breakage rate test: G12 size silicon wafers were cut with a cutting tension of 4.0N and cutting times of 100min and 120min respectively. The number of cuts was 200 for both. The wire breakage rates were compared.

[0179] Yield test: The appearance of the cut silicon wafers is used as the evaluation standard. When the appearance of the silicon wafers is normal, they are considered as qualified finished products.

[0180] The test results are shown in Table 2.

[0181] Table 2

[0182] Example 1 96.22％ 7.01％ Example 2 98.46％ 6.96％ Example 3 99.36％ 3.97％ Example 4 96.21％ 8.26％ Example 5 98.41％ 7.25％ Example 6 98.27％ 6.99％ Example 7 95.10％ 10.21％ Example 8 98.21％ 6.64％ Example 9 97.95％ 7.21％ Example 10 96.26％ 8.88％ Example 11 95.42％ 7.39％ Example 12 97.54％ 4.69％ Example 13 98.20％ 3.98％ Example 14 98.65％ 5.86％ Example 15 97.69％ 6.69％ Example 16 96.46％ 8.41％ Example 17 97.98％ 11.97％ Example 18 94.20％ 8.91％ Comparative Example 1 92.25％ 14.92％ Comparative Example 2 82.56％ 18.71％ Comparative Example 3 84.86％ 9.69％ Comparative Example 4 93.23％ 15.45％ Comparative Example 5 94.17％ 16.69％ Comparative Example 6 93.56％ 15.62％ Comparative Example 7 94.41％ 12.89％ Comparative Example 8 91.56％ 17.45％ Comparative Example 9 91.56％ 22.26％

[0183] As can be seen from Table 2, the diamond wire and diamond wire busbar obtained by using the solution provided in this application have good strength performance. At the same time, during the silicon wafer cutting process, due to the high uniformity of their diameter, the cut silicon wafers have a smooth appearance and the yield is significantly improved.

[0184] The diamond wire busbar and diamond wire provided in the embodiments of this application have been described in detail above. Specific examples have been used in this application to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A diamond wire busbar, characterized in that, Includes a substrate (100) and a covering layer (200) covering at least a portion of the surface of the substrate (100), the covering layer (200) comprising: A first metal layer (201) is disposed on at least a portion of the surface of the substrate (100); A second metal layer (202) is disposed on at least a portion of the surface of the first metal layer (201) away from the substrate (100); A third metal layer (203) is disposed on at least a portion of the surface of the second metal layer (202) away from the first metal layer (201); the third metal layer is prepared by thermal diffusion. Wherein, the first metal layer (201) includes a first metal, the second metal layer (202) includes a second metal, and the third metal layer (203) includes a third metal and a fourth metal; The first metal includes nickel; The second metal includes copper; The third metal includes at least one of zinc, nickel, and tin; The fourth metal includes copper; The first metal has a mass percentage of 95% to 100% in the first metal layer (201); the second metal has a mass percentage of 95% to 100% in the second metal layer (202); the third metal has a mass percentage of 5% to 10% on the side of the third metal layer (203) closer to the second metal layer (202); and the third metal has a mass percentage of 30% to 35% on the side of the third metal layer (203) farther from the second metal layer (202). Along the direction away from the second metal layer (202), the content of the third metal in the third metal layer (203) increases; the fourth metal and the second metal are the same metal; Along the radial direction of the diamond wire, the substrate (100) has a maximum dimension D μm, the cladding layer (200) has a first dimension L1 μm, the first metal layer (201) has a second dimension L2 μm, the second metal layer (202) has a third dimension L3 μm, and the third metal layer (203) has a fourth dimension L4 μm, satisfying: D = a·L1; L3 = b·L2; L3 = c·L4; Wherein, 16≤D≤50; 0.25≤L1≤1.2; a is the first thickness coefficient, satisfying 30≤a≤105; b is the second thickness coefficient, satisfying 5≤b≤15; and c is the third thickness coefficient, satisfying 2≤c≤8.

2. The diamond wire busbar according to claim 1, characterized in that, The second dimension L2 μm satisfies: 0.01≤L2≤0.

12.

3. A diamond wire busbar according to claim 2, characterized in that, The third dimension L3 μm satisfies: 0.01≤L3≤2.

4. The diamond wire busbar according to claim 1, characterized in that, The fourth dimension L4 μm satisfies: 0.01≤L4≤1.

5. A method for preparing a diamond wire mainframe as described in any one of claims 1 to 4, characterized in that, Includes the following steps: Provide a matrix (100); A first metal layer (201) is formed on at least a portion of the surface of the substrate (100). A second metal layer (202) is formed on at least a portion of the surface of the first metal layer (201) on the side away from the substrate (100). A third metal layer (203) is formed on at least a portion of the surface of the second metal layer (202) on the side away from the first metal layer (201) to obtain an intermediate product; The intermediate product is drawn to obtain the diamond wire busbar.

6. The method for preparing a diamond wire busbar according to claim 5, characterized in that, The step of providing the substrate (100) includes: giving the substrate (100) a first diameter D1 μm; The step of forming a first metal layer (201) on at least a portion of the surface of the substrate (100) further includes: giving the first metal layer (201) a first thickness T1 μm; The step of forming a second metal layer (202) on at least a portion of the surface of the first metal layer (201) on the side away from the substrate (100) further includes: giving the second metal layer (202) a second thickness T2 μm; The step of forming a third metal layer (203) on at least a portion of the surface of the second metal layer (202) on the side away from the first metal layer (201) further includes: giving the third metal layer (203) a third thickness T3 μm; The step of drawing the intermediate product further includes: giving the substrate (100) a second diameter D2 μm, the first metal layer (201) a fourth thickness T4 μm, the second metal layer (202) a fifth thickness T5 μm, and the third metal layer (203) a sixth thickness T6 μm; Among them, D1 > D2, T1 > T4, T2 > T5, and T3 > T6.

7. The method for preparing a diamond wire busbar according to claim 6, characterized in that, The first thickness T1 μm and the fourth thickness T4 μm satisfy: T1 = (1.5~2.5)T4; and / or, The second thickness T2 μm and the fifth thickness T5 μm satisfy: T2 = (1.8~2)T5; and / or, The third thickness T3 μm and the sixth thickness T6 μm satisfy: T3 = (2~3)T6.

8. The method for preparing a diamond wire busbar according to claim 6, characterized in that, The first diameter D1 μm satisfies: 50 ≤ D1 ≤ 100; and / or, The second diameter D2 μm satisfies: 10 ≤ D2 ≤ 100; and / or, The first thickness T1 μm satisfies: 0.02 ≤ T1 ≤ 0.25; and / or, The second thickness T2 μm satisfies: 0.2 ≤ T2 ≤ 1.5; and / or, The third thickness T3 μm satisfies: 0.1 ≤ T3 ≤ 0.6; and / or, The fourth thickness T4 μm satisfies: 0.01 ≤ T4 ≤ 0.12; and / or, The fifth thickness T5 μm satisfies: 0.1 ≤ T5 ≤ 0.8; and / or, The sixth thickness T6 μm satisfies: 0.03≤T6≤0.

3.

9. A diamond wire, characterized in that, Includes a diamond wire main body, a grinding layer (300) and a first particle (301) as described in any one of claims 1 to 4, wherein the grinding layer (300) covers at least a portion of the surface of the diamond wire main body (10), the first particle (301) is dispersed in the grinding layer (300), and at least a portion of the first particle (301) protrudes from the grinding layer (300).

10. A diamond wire according to claim 9, characterized in that, The grinding layer (300) contains a second particle (302); the second particle (302) is disposed between adjacent first particles (301); The thickness of the wear layer (300) is 0.1 μm to 100 μm; and / or, The average particle size of the first particle (301) is 10 μm to 100 μm; and / or, The average particle size of the second particle (302) is 2μm~10μm.

11. A diamond wire according to claim 9, characterized in that, A fourth metal layer (400) is provided between the diamond wire busbar and the grinding layer (300); the fourth metal layer (400) includes nickel.

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