Millimeter wave broadband planar omnidirectional antenna

By designing a millimeter-wave broadband plane omnidirectional antenna containing a specific structure, the problem that the prior art cannot achieve in-band notch and high selectivity at the same time is solved, and the effect of effectively suppressing in-band interference and efficiently utilizing spectrum resources is achieved.

CN119401121APending Publication Date: 2025-02-07SHENZHEN SUNWAY COMM
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202411695886.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-25
Publication Date
2025-02-07

AI Technical Summary

Technical Problem

The existing millimeter-wave broadband plane omnidirectional antennas cannot have both in-band notch and high selectivity, resulting in the in-band interference being unable to effectively suppress in-band interference and efficiently utilize band resources.

Method used

A millimeter-wave broadband plane omnidirectional antenna including radio frequency formation, dielectric layer and radiation layer was designed. The radiation layer uses a combination of radiators, 50 ohm feeders, L-shaped microstrip lines and rectangular metal patches to achieve the belt through these structures. Inner notch and high selectivity.

Benefits of technology

It realizes the effect of effectively suppressing in-band interference and efficiently utilizing spectrum resources, and has the advantages of in-band notch and high selectivity.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119401121A_ABST
    Figure CN119401121A_ABST
Patent Text Reader

Abstract

A radiation layer comprises a radiation body, a 50-ohm feeder line, an L-shaped microstrip line and a rectangular metal patch, the radiation body comprises a rectangular radiation part and two trapezoidal radiation parts, and the two trapezoidal radiation parts are attached to the two transverse side edges of the rectangular radiation part respectively. The transverse side edges of the rectangular radiation parts coincide with the bottom edges of the trapezoidal radiation parts, the top edges of the trapezoidal radiation parts are arranged away from the rectangular radiation parts, the two trapezoidal radiation parts are symmetrical about the rectangular radiation parts, the 50-ohm feeder line is arranged on one longitudinal side edge of each rectangular radiation part, and the L-shaped microstrip line and the rectangular metal patch are arranged on the two sides of the 50-ohm feeder line respectively. And gaps are formed between the L-shaped microstrip line and the 50-ohm feeder line and between the rectangular metal patch and the 50-ohm feeder line. The millimeter wave broadband planar omnidirectional antenna has the advantages of in-band notch and high selectivity, and can effectively suppress in-band interference and efficiently utilize spectrum resources.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The present invention relates to the field of antenna technology, and in particular to a millimeter wave broadband planar omnidirectional antenna. Background Art

[0002] Millimeter-wave broadband planar omnidirectional antennas have attracted extensive attention and in-depth research from scholars and engineers in the industry due to their advantages of high transmission rate, low cost, light weight, simple design, high data transmission rate, and easy integration with other components. However, the millimeter-wave broadband planar omnidirectional antennas reported so far often cannot have both in-band notch and high selectivity characteristics, cannot effectively suppress in-band interference and efficiently utilize frequency band resources, which limits their use in modern wireless communication terminals. Summary of the invention

[0003] In view of the above-mentioned deficiencies in the prior art, an object of the present invention is to provide a millimeter-wave broadband planar omnidirectional antenna with in-band notch and high selectivity.

[0004] In order to achieve the above object, the technical solution adopted by the present invention is:

[0005] A millimeter-wave broadband planar omnidirectional antenna comprises a radio frequency stratum, a dielectric layer and a radiation layer which are stacked in sequence in a vertical direction, the radiation layer comprising a radiator, a 50-ohm feeder, an L-shaped microstrip line and a rectangular metal patch, the radiator comprising a rectangular radiating portion and two trapezoidal radiating portions, the two trapezoidal radiating portions are respectively attached to two lateral sides of the rectangular radiating portion, the lateral sides of the rectangular radiating portion coincide with the bottom sides of the trapezoidal radiating portion, the top sides of the trapezoidal radiating portions are arranged away from the rectangular radiating portion, the two trapezoidal radiating portions are symmetrical about the rectangular radiating portion, the 50-ohm feeder is arranged on one longitudinal side of the rectangular radiating portion, the L-shaped microstrip line and the rectangular metal patch are respectively arranged on both sides of the 50-ohm feeder, and there are gaps between the L-shaped microstrip line and the 50-ohm feeder, and between the rectangular metal patch and the 50-ohm feeder.

[0006] Optionally, the rectangular metal patch is parallel to the 50 ohm feed line, and the L-shaped microstrip line consists of vertical and horizontal sides, the horizontal sides are parallel to the 50 ohm feed line, the vertical sides are arranged away from the radiator, and the vertical sides extend in a direction away from the 50 ohm feed line.

[0007] Optionally, the radiator, the 50-ohm feeder and the radio frequency stratum are all symmetrical about a transverse center line of the dielectric layer in a horizontal direction.

[0008] Optionally, a projection of the radio frequency stratum in the vertical direction is located on a side of the radiator on which the 50-ohm feeder is provided.

[0009] Optionally, the 50-ohm feed line, the L-shaped microstrip line and the rectangular metal patch are all perpendicular to the longitudinal sides of the rectangular radiation portion.

[0010] Optionally, the radiator is octagonal.

[0011] Optionally, the radiator is arranged in one piece.

[0012] Optionally, the dielectric constant of the dielectric layer is 3.38, the dielectric loss is 0.0022, and the thickness is 0.2 mm; the thickness of the radio frequency layer and the radiation layer are both 0.035 mm.

[0013] Optional, the specific parameters are as follows:

[0014] L A =11.5mm, L A is the length of the dielectric layer;

[0015] W A =11.0mm, W A is the width of the dielectric layer and the width of the radio frequency formation;

[0016] L G =3.84mm, L G is the length of the radio frequency formation;

[0017] L P =7.0mm, L P is the length of the rectangular radiating portion and the length of the bottom side of the trapezoidal radiating portion;

[0018] L T =3.0mm, L T is the length of the top side of the trapezoidal radiating portion;

[0019] H P =4.4mm, H P is the height of the rectangular radiation portion;

[0020] H T =2.3mm, H T is the height of the trapezoidal radiating portion;

[0021] L 1 =2.65mm, L 1 is the length of the rectangular metal patch;

[0022] L 2 =2.6mm, L 2 is the length of the vertical side of the L-shaped microstrip line;

[0023] L 3 =0.4mm, L 3is the length of the horizontal side of the L-shaped microstrip line;

[0024] W 1 =0.5mm, W 1 is the width of the rectangular metal patch;

[0025] W 2 =0.1mm, W 2 is the width of the L-shaped microstrip line;

[0026] S 1 =0.1mm, S 1 is the distance between the rectangular metal patch and the 50-ohm feed line;

[0027] S 2 =0.03mm, S 2 is the distance between the L-shaped microstrip line and the 50-ohm feed line;

[0028] L F =4.0mm, L F is the length of the 50-ohm feed line;

[0029] W F =0.4mm,W F is the width of the 50 ohm feed line.

[0030] The beneficial effects of the present invention are as follows: the millimeter wave broadband planar omnidirectional antenna of the present invention has the advantages of in-band notch and high selectivity, can effectively suppress in-band interference and efficiently utilize spectrum resources. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 Shown is a side view of a millimeter wave broadband planar omnidirectional antenna according to an embodiment of the present invention;

[0032] Figure 2 Shown is a front view of a millimeter wave broadband planar omnidirectional antenna according to an embodiment of the present invention;

[0033] Figure 3 Shown is a back view of the millimeter wave broadband planar omnidirectional antenna according to an embodiment of the present invention;

[0034] Figure 4 The figure shows the layout diagram of the front view direction of the millimeter wave broadband planar omnidirectional antenna according to an embodiment of the present invention;

[0035] Figure 5 The figure shows the layout diagram of the millimeter wave broadband planar omnidirectional antenna in the back-view direction according to an embodiment of the present invention;

[0036] Figure 6 FIG. 1 is an enlarged schematic diagram of an L-shaped microstrip line in a back-viewing direction layout diagram of a millimeter-wave broadband planar omnidirectional antenna according to an embodiment of the present invention;

[0037] Figure 7 Shown is a simulation result of the reflection coefficient of the millimeter-wave broadband planar omnidirectional antenna according to an embodiment of the present invention;

[0038] Figure 8 The figure shows the maximum gain and radiation efficiency simulation results of the millimeter wave broadband planar omnidirectional antenna according to the embodiment of the present invention;

[0039] Fig. 9 The figure shows the radiation pattern of the millimeter wave broadband planar omnidirectional antenna at 9.0 GHz according to an embodiment of the present invention;

[0040] Fig.10 The figure shows the radiation pattern of the millimeter wave broadband planar omnidirectional antenna at 21.0 GHz according to an embodiment of the present invention;

[0041] Fig.11 Shown is the radiation pattern of the millimeter-wave broadband planar omnidirectional antenna at 33.0 GHz according to an embodiment of the present invention.

[0042] Description of labels:

[0043] 1. RF formation; 2. Dielectric layer; 3. Radiation layer; 31. Radiator; 32. 50 ohm feed line; 33. L-shaped microstrip line; 34. Rectangular metal patch. DETAILED DESCRIPTION

[0044] In order to more clearly understand the technical content, achieved purposes and effects of the present invention, the present invention is described in detail below in conjunction with specific implementation methods and in conjunction with the accompanying drawings. It should be noted that, in the absence of conflict, the implementation methods of the present invention and the features in the implementation methods can be combined with each other. In the following description, many specific details are set forth in order to fully understand the present invention. The described implementation methods are only part of the implementation methods of the present invention, rather than all implementation methods. Based on the implementation methods in the present invention, all other implementation methods obtained by those skilled in the art without making creative work are within the scope of protection of the present invention.

[0045] Please refer to Figure 1-Figure 11As shown, an embodiment of the present invention provides a millimeter-wave broadband planar omnidirectional antenna, which is composed of a radio frequency layer 1, a dielectric layer 2 and a radiation layer 3 stacked in sequence in a vertical direction, wherein the radio frequency layer 1 is attached to the front of the dielectric layer 2, and the radiation layer 3 is attached to the back of the dielectric layer 2. The radio frequency layer 1 and the radiation layer 3 are metal layers. The radiation layer 3 includes a radiator 31, a 50-ohm feeder 32, an L-shaped microstrip line 33 and a rectangular metal patch 34. The radiator 31 includes a rectangular radiating portion and two trapezoidal radiating portions, and the two trapezoidal radiating portions are respectively attached to the two lateral sides of the rectangular radiating portion, the lateral sides of the rectangular radiating portion coincide with the bottom side of the trapezoidal radiating portion, the top side of the trapezoidal radiating portion is arranged away from the rectangular radiating portion, the two trapezoidal radiating portions are symmetrical about the rectangular radiating portion, and the radiator 31 is octagonal as a whole. In a specific embodiment, the radiator 31 is arranged as an integral body. One end of the 50-ohm feed line 32 is attached to one side of the longitudinal direction of the rectangular radiation part, and the other end extends in a direction away from the radiator 31. The L-shaped microstrip line 33 and the rectangular metal patch 34 are respectively arranged on both sides of the 50-ohm feed line 32, and there is a gap between the L-shaped microstrip line 33 and the 50-ohm feed line 32, and between the rectangular metal patch 34 and the 50-ohm feed line 32. The rectangular metal patch 34 is parallel to the 50-ohm feed line 32, and the L-shaped microstrip line 33 is composed of a vertically arranged horizontal side and a vertical side. The horizontal side is parallel to the 50-ohm feed line 32, and the vertical side is arranged away from the radiator 31, and the vertical side extends in a direction away from the 50-ohm feed line 32. The 50-ohm feed line 32, the L-shaped microstrip line 33 and the rectangular metal patch 34 are all perpendicular to the longitudinal side of the rectangular radiation part. The vertical projection of the radio frequency layer 1 is located on the side of the radiator 31 where the 50 ohm feed line 32 is provided. The radiator 31, the 50 ohm feed line 32 and the radio frequency layer 1 are all symmetrical about the horizontal center line of the dielectric layer 2. Figure 1-Figure 3 shown.

[0046] The millimeter-wave broadband planar omnidirectional antenna of this embodiment has a radiation performance determined by the size parameters of the radiator 31, a bandwidth and a reflection coefficient jointly determined by the size parameters of the radio frequency formation 1 and the size parameters of the radiator 31, a notch center frequency and the isolation at the notch center frequency jointly determined by the size parameters and the position of the L-shaped microstrip line 33, and a high selectivity of the upper passband edge jointly determined by the size and position of the rectangular radiation patch 34.

[0047] In a specific embodiment, the dielectric constant of the dielectric layer 2 is 3.38, the dielectric loss is 0.0022, and the thickness is 0.2 mm; the metal layer is copper-plated and has a thickness of 0.035 mm. Figure 3-Figure 6 The specific parameter settings are as follows:

[0048] L A =11.5mm, L A is the length of the dielectric layer 2;

[0049] W A =11.0mm, W A is the width of the dielectric layer 2 and the width of the radio frequency layer 1;

[0050] L G =3.84mm, L G is the length of the radio frequency formation 1;

[0051] L P =7.0mm, L P is the length of the rectangular radiating portion and the length of the bottom side of the trapezoidal radiating portion;

[0052] L T =3.0mm, L T is the length of the top side of the trapezoidal radiating portion;

[0053] H P =4.4mm, H P is the height of the rectangular radiation portion;

[0054] H T =2.3mm, H T is the height of the trapezoidal radiating portion;

[0055] L 1 =2.65mm, L 1 is the length of the rectangular metal patch 34;

[0056] L 2 =2.6mm, L 2 is the length of the vertical side of the L-shaped microstrip line 33;

[0057] L 3 =0.4mm, L 3 is the length of the horizontal side of the L-shaped microstrip line 33;

[0058] W 1 =0.5mm, W 1 is the width of the rectangular metal patch 34;

[0059] W 2 =0.1mm, W 2 is the width of the L-shaped microstrip line 33;

[0060] S 1 =0.1mm, S 1is the distance between the rectangular metal patch 34 and the 50-ohm feed line 32;

[0061] S 2 =0.03mm, S 2 is the distance between the L-shaped microstrip line 33 and the 50-ohm feed line 32;

[0062] L F =4.0mm, L F is the length of the 50-ohm feed line 32;

[0063] W F =0.4mm,W F is the width of the 50-ohm feed line 32 .

[0064] In the millimeter-wave broadband planar omnidirectional antenna of this embodiment, the in-band notch is caused by a transmission zero point introduced by the L-shaped microstrip line, and the high selectivity of the broadband antenna is caused by another transmission zero point introduced by the rectangular patch.

[0065] Notch center frequency f N The dimension parameter L of the L-type microstrip line 2 , L 3 The relationship between them is:

[0066]

[0067]

[0068] Among them, ε r is the dielectric constant of the medium.

[0069] The frequency f corresponding to the transmission zero that leads to high selectivity at the upper passband edge Z0 The length of the rectangular metal patch is L 1 The relationship between them is:

[0070]

[0071] The reflection coefficient simulation results of the antenna in this embodiment are as follows: Figure 7As shown in the figure, it is easy to see that the bandwidth range of the standing wave ratio less than 2 is 8.82 to 33.76GHz, the center frequency is 22.29GHz, the absolute bandwidth is 24.94GHz, and the relative bandwidth is 111.9%, showing broadband characteristics; in the passband, there are five transmission poles, located at 10.69GHz, 13.12GHz, 17.76GHz, 23.63GHz, and 32.49GHz, respectively, to ensure the maximum gain and flatness of radiation efficiency in the passband; there is also a notch in the passband, located at 15.91GHz, which can effectively suppress the notch in the band; there is also a transmission zero point at 35GHz near the upper passband edge, which can improve the selectivity of the antenna.

[0072] like Figure 8 The maximum gain and radiation efficiency simulation results of the antenna of this embodiment are shown. As can be seen from the figure, within the passband, its average maximum gain is 2.65dBi, showing the advantage of high maximum gain; within the passband, its average radiation efficiency is 95.03%, showing the advantage of high radiation efficiency; at the center frequency of the notch, its maximum gain is only -11.6dBi, and the radiation efficiency is 23.8%. By comparing the average maximum gain and average radiation efficiency within the passband, it can be seen that it has high isolation characteristics at the center frequency of the notch; at 35GHz, its maximum gain is only -0.5dBi, and the radiation efficiency is 38.1%. By comparing the maximum gain of 4.78dBi and the radiation efficiency of 93% at 33.5GHz, it can be seen that it has high selectivity at the upper passband edge.

[0073] Figure 9-11 2 are the radiation patterns of the antenna of this embodiment at 9.0 GHz, 21.0 GHz and 33 GHz respectively. It can be seen from the figure that the antenna is an omnidirectional antenna.

[0074] In summary, the millimeter-wave broadband planar omnidirectional antenna of the present invention has the advantages of in-band notch and high selectivity, and can effectively suppress in-band interference and efficiently utilize spectrum resources.

[0075] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Therefore, any modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the technical solution of the present invention are still within the scope of the technical solution of the present invention.

Claims

1. A millimeter wave broadband planar omnidirectional antenna, comprising a radio frequency layer, a dielectric layer and a radiation layer stacked in sequence in a vertical direction, characterized in that: The radiation layer includes a radiator, a 50-ohm feeder, an L-shaped microstrip line and a rectangular metal patch. The radiator includes a rectangular radiating portion and two trapezoidal radiating portions. The two trapezoidal radiating portions are respectively attached to two lateral sides of the rectangular radiating portion. The lateral side of the rectangular radiating portion coincides with the bottom side of the trapezoidal radiating portion. The top side of the trapezoidal radiating portion is arranged away from the rectangular radiating portion. The two trapezoidal radiating portions are symmetrical about the rectangular radiating portion. The 50-ohm feeder is arranged on one longitudinal side of the rectangular radiating portion. The L-shaped microstrip line and the rectangular metal patch are respectively arranged on both sides of the 50-ohm feeder. There is a gap between the L-shaped microstrip line and the 50-ohm feeder, and between the rectangular metal patch and the 50-ohm feeder.

2. The millimeter wave broadband planar omnidirectional antenna according to claim 1, characterized in that: The rectangular metal patch is parallel to the 50-ohm feed line, the L-shaped microstrip line consists of a horizontal side and a vertical side that are vertically arranged, the horizontal side is parallel to the 50-ohm feed line, the vertical side is arranged away from the radiator, and the vertical side extends in a direction away from the 50-ohm feed line.

3. The millimeter wave broadband planar omnidirectional antenna according to claim 1, characterized in that: The radiator, the 50-ohm feeder and the radio frequency stratum are all symmetrical about a transverse center line of the dielectric layer in a horizontal direction.

4. The millimeter wave broadband planar omnidirectional antenna according to claim 1, characterized in that: The projection of the radio frequency stratum in the vertical direction is located on the side of the radiator where the 50-ohm feeder is provided.

5. The millimeter wave broadband planar omnidirectional antenna according to claim 1, characterized in that: The 50-ohm feed line, the L-shaped microstrip line and the rectangular metal patch are all perpendicular to the longitudinal sides of the rectangular radiation portion.

6. The millimeter wave broadband planar omnidirectional antenna according to claim 1, characterized in that: The radiator is in an octagonal shape.

7. The millimeter wave broadband planar omnidirectional antenna according to claim 1, characterized in that: The radiator is arranged in one piece.

8. The millimeter wave broadband planar omnidirectional antenna according to claim 2, characterized in that: The dielectric constant of the dielectric layer is 3.38, the dielectric loss is 0.0022, and the thickness is 0.2 mm; the thickness of the radio frequency layer and the radiation layer are both 0.035 mm.

9. The millimeter wave broadband planar omnidirectional antenna according to claim 8, characterized in that: The specific parameter settings are as follows: L A =11.5mm, L A is the length of the dielectric layer; W A =11.0mm, W A is the width of the dielectric layer and the width of the radio frequency formation; L G =3.84mm, L G is the length of the radio frequency formation; L P =7.0mm, L P is the length of the rectangular radiating portion and the length of the bottom side of the trapezoidal radiating portion; L T =3.0mm, L T is the length of the top side of the trapezoidal radiating portion; H P =4.4mm, H P is the height of the rectangular radiation portion; H T =2.3mm, H T is the height of the trapezoidal radiating portion; L1=2.65mm, L1 is the length of the rectangular metal patch; L2=2.6 mm, L2 is the length of the vertical side of the L-shaped microstrip line; L3=0.4mm, L3 is the length of the horizontal side of the L-shaped microstrip line; W1=0.5mm, W1 is the width of the rectangular metal patch; W2=0.1 mm, W2 is the width of the L-shaped microstrip line; S1=0.1 mm, S1 is the distance between the rectangular metal patch and the 50 ohm feed line; S2=0.03 mm, S2 is the distance between the L-shaped microstrip line and the 50 ohm feed line; L F =4.0mm, L F is the length of the 50-ohm feed line; W F =0.4mm,W F is the width of the 50 ohm feed line.