SEMICONDUCTOR PROCESSING LIQUID, METHOD FOR PROCESSING OBJECT TO be TREATED, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

Abstract

The present invention addresses the problem of providing: a semiconductor processing liquid which, when in contact with an object containing at least one metal selected from the group consisting of Cu and Co, has excellent corrosion resistance against the metal and also has excellent cleaning properties against organic residues on the surface of the object to be processed; a method for processing the object to be processed; and a method for manufacturing an electronic device. This treatment liquid contains a purine compound and an amine compound, the purine compound including at least one substance selected from purine and purine derivatives, the amine compound including at least two substances selected from one amine compound (A) and one or more amine compounds (B) different from the amine compound (A), the amine compound (A) being a tertiary amine compound, and the amine compound (B) being a secondary amine compound. The mass ratio of the purine compound content to the amine compound content is 0.0001 to 0.1.

Description

Technical Field

[0001] The present invention relates to a semiconductor processing liquid, a processing method for a processed object and a manufacturing method for an electronic device. Background Art

[0002] Semiconductor elements are manufactured by forming a resist film on a laminate having a metal film, an etching stop layer, and an interlayer insulating layer on a substrate and performing a photolithography process. In the photolithography process, a method of etching or removing foreign matter on the surface of a substrate using a treatment solution that dissolves metal and / or organic matter is well known.

[0003] In addition, in the manufacture of semiconductor devices, a chemical mechanical polishing (CMP) process is sometimes performed to flatten the surface of a semiconductor substrate having a metal wiring film, a barrier metal, an insulating film, etc., using a polishing slurry containing polishing particles (for example, silicon dioxide and aluminum oxide).

[0004] In the CMP process, metal components derived from the abrasive particles used in the CMP process, the polished wiring metal film and / or the barrier metal, etc., tend to remain on the surface of the polished semiconductor substrate. Therefore, after the CMP process, a cleaning process is generally performed to remove these residues using a processing liquid.

[0005] As described above, in the semiconductor manufacturing process, the processing liquid is used to remove unnecessary metal-containing substances, resists, residues, etc. on the substrate. Hereinafter, such a processing liquid used in the manufacturing process of semiconductor elements is also referred to as a semiconductor processing liquid.

[0006] As a processing liquid, for example, Patent Document 1 discloses the following: a composition containing an effective amount of one or more quaternary ammonium hydroxide compounds, one or more organic amine compounds, a metal inhibitor and water to adjust the pH of the composition to about 10 to about 14, and is suitable for removing contaminants from semiconductor wafers after chemical mechanical polishing.

[0007] Previous technical literature

[0008] Patent Literature

[0009] Patent Document 1: Japanese Patent Application No. 2018-507540 Summary of the invention

[0010] Technical issues to be solved by the invention

[0011] The present inventors have conducted studies and found that the composition disclosed in Patent Document 1 cannot achieve both anticorrosion properties against Cu and Co and cleaning properties against organic residues on the surface of the treated object, and further improvement is required.

[0012] Therefore, an object of the present invention is to provide a semiconductor processing liquid which has excellent corrosion resistance against an object containing at least one metal selected from Cu and Co and excellent cleaning properties against organic residues on the surface of the object when in contact with the object.

[0013] Furthermore, an object of the present invention is to provide a method for treating an object to be treated and a method for manufacturing an electronic device using the above-mentioned treatment liquid.

[0014] Means for solving technical problems

[0015] The present inventors have conducted intensive studies to solve the above-mentioned problems and have found that the problems can be solved by the following configuration.

[0016] [1] A semiconductor processing liquid comprising a purine compound and an amine compound,

[0017] The purine compound comprises at least one selected from purine and purine derivatives,

[0018] The amine compound comprises one amine compound A and one or more amine compounds B different from the amine compound A.

[0019] The above-mentioned amine compound A is a tertiary amine compound,

[0020] The mass ratio of the content of the purine compound to the content of the amine compound is 0.0001 to 0.1.

[0021] [2] The semiconductor processing liquid according to [1], wherein

[0022] The amine compound A is one selected from the group consisting of a compound represented by the formula (A1) described below and a compound represented by the formula (A2) described below.

[0023] [3] The semiconductor processing liquid according to [1] or [2], wherein the pH value is 10.0 to 14.0.

[0024] [4] A semiconductor processing liquid according to any one of [1] to [3], wherein

[0025] The purine compound includes at least one selected from the group consisting of a compound represented by the formula (C5) described below and a compound represented by the formula (C7) described below.

[0026] [5] A semiconductor processing liquid according to any one of [1] to [4], wherein

[0027] At least one of the one or two or more amine compounds B is a tertiary amine compound.

[0028] [6] A semiconductor processing liquid according to any one of [1] to [5], wherein

[0029] At least one of the one or two or more amine compounds B is an amine compound having two or more nitrogen atoms.

[0030] [7] A semiconductor processing liquid according to any one of [1] to [6], wherein

[0031] At least one of the one or two or more amine compounds B is an amine compound having three or more nitrogen atoms.

[0032] [8] A semiconductor processing liquid according to any one of [1] to [7], wherein

[0033] The pKa of the amine compound A is 11.0 to 16.0.

[0034] [9] A semiconductor processing liquid according to any one of [1] to [8], wherein

[0035] The molecular weight of the amine compound A is 100-160.

[0036]

[10] The semiconductor processing liquid according to any one of [1] to [9], wherein

[0037] The amine compound A has 6 to 9 carbon atoms.

[0038] (11) The semiconductor processing liquid according to any one of [1] to

[10] , wherein

[0039] The purine compound includes at least one selected from the group consisting of adenine, 6-benzyladenine, kinetin, dimethyladenine, methyladenine, xanthine, and adenosine.

[0040]

[12] The semiconductor processing liquid according to any one of [1] to

[11] , which is used as a cleaning liquid.

[0041]

[13] The semiconductor processing liquid according to any one of [1] to

[12] , which is used for an object subjected to a chemical mechanical polishing process.

[0042]

[14] The semiconductor processing liquid according to any one of [1] to

[13] , which is used for a target object containing at least one metal selected from Cu and Co.

[0043]

[15] The semiconductor processing liquid according to any one of [1] to

[14] , which is used for a target object containing at least one metal selected from Cu and Co subjected to a chemical mechanical polishing process.

[0044]

[16] A method for treating an object to be treated, comprising:

[0045] A step of bringing an object containing at least one metal selected from Cu and Co, which has been subjected to chemical mechanical polishing, into contact with the semiconductor processing liquid described in any one of [1] to

[15] .

[0046]

[17] A method for manufacturing an electronic device, comprising the method for processing an object to be processed as described in

[16] .

[0047] Effects of the Invention

[0048] According to the present invention, it is possible to provide a semiconductor processing liquid which, when used on an object containing at least one metal selected from Cu and Co, has excellent corrosion protection against the metal and also has excellent cleaning properties against organic residues on the surface of the object.

[0049] Furthermore, according to the present invention, a method for processing an object to be processed and a method for manufacturing an electronic device using the processing liquid can be provided. DETAILED DESCRIPTION

[0050] Hereinafter, the present invention will be described in detail.

[0051] The description of the constituent elements described below may be based on representative embodiments of the present invention, but the present invention is not limited to these embodiments.

[0052] In the present specification, a numerical range expressed with "to" means a range including the numerical values ​​described before and after "to" as the lower limit and the upper limit.

[0053] Furthermore, in the present specification, when two or more kinds of a certain component are present, the "content" of the component means the total content of these two or more kinds of components.

[0054] In the present specification, “the total mass of components other than the solvent in the treatment liquid” means the total mass of all components contained in the treatment liquid other than the solvent such as water and an organic solvent.

[0055] In this specification, when there are multiple substituents and linking groups (hereinafter referred to as substituents, etc.) represented by specific symbols or when multiple substituents, etc. are specified at the same time, the respective substituents, etc. may be the same or different from each other. The same also applies to the number of substituents, etc.

[0056] The bonding direction of the divalent groups marked in this specification is not limited unless otherwise specified. For example, when Y in the compound represented by the "XYZ" formula is -COO-, Y may be -CO-O- or -O-CO-. Furthermore, the above compound may be "X-CO-OZ" or "XO-CO-Z".

[0057] In this specification, "ppm" means "parts-per-million (10 -6 ), "ppb" means "parts-per-billion (10 -9 ), one billionth.”

[0058] In the present specification, the "weight average molecular weight" refers to a polyethylene glycol-equivalent weight average molecular weight measured by GPC (gel permeation chromatography).

[0059] [Processing liquid]

[0060] Hereinafter, each component contained in the semiconductor processing liquid of the present invention will be described in detail.

[0061] The semiconductor processing liquid of the present invention (hereinafter also referred to as "processing liquid") contains a purine compound and an amine compound, wherein the purine compound includes at least one selected from purine and purine derivatives, and the amine compound includes a tertiary amine compound, i.e., one amine compound A and one or more amine compounds B different from the amine compound A, and the mass ratio of the content of the purine compound to the content of the amine compound is 0.0001 to 0.1.

[0062] The reason why the processing liquid having the above-mentioned structure can solve the problems of the present invention is not clear, but the present inventors speculate as follows.

[0063] In addition, the mechanism by which the effect can be obtained by the following speculation is not limited. In other words, even if the effect is obtained by a mechanism other than the following, it is also included in the scope of the present invention.

[0064] The treatment liquid contains at least two amine compounds, and has excellent cleaning properties for organic residues on the surface of the treated object. On the other hand, the alkalinity is appropriately adjusted by the amine compound A being a tertiary amine compound, and the treatment liquid contains a purine compound that acts as an antiseptic for a specified metal, which can inhibit the corrosion of the specified metal, and as a result, exhibits excellent corrosion resistance for the specified metal. Furthermore, it is speculated that by determining the content ratio of the purine compound to the amine compound, the semiconductor treatment liquid of the present invention has both excellent corrosion resistance for the specified metal and excellent cleaning properties for organic residues on the surface of the treated object.

[0065] Hereinafter, in this specification, the cleaning property of the semiconductor processing liquid of the present invention for organic residues on the surface of the object to be processed is also referred to as "cleaning property". Furthermore, at least one of the anticorrosive property and the cleaning property being better is also referred to as "the effect of the present invention being better".

[0066] 〔Purine compounds〕

[0067] The treatment liquid contains a purine compound. The purine compound includes at least one selected from purine and a purine derivative.

[0068] The purine compound preferably comprises at least one selected from the compounds represented by formulas (C1) to (C4), more preferably comprises at least one selected from the compounds represented by formulas (C5) to (C8), and further preferably comprises at least one selected from the compound represented by formula (C5) and the compound represented by formula (C7).

[0069] [Chemical formula 1]

[0070]

[0071] In formula (C1), R C1 ~R C3 Each independently represents a hydrogen atom, an alkyl group which may have a substituent, an amino group which may have a substituent, a thiol group, a hydroxyl group, a halogen atom, a sugar group which may have a substituent, or a polyoxyalkylene-containing group which may have a substituent.

[0072] The alkyl group may be linear, branched or cyclic.

[0073] The alkyl group has preferably 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms, and even more preferably 1 to 3 carbon atoms.

[0074] Examples of the sugar group include a group formed by removing one hydroxyl group from a sugar selected from monosaccharides, disaccharides and polysaccharides, and a group formed by removing one hydroxyl group from a monosaccharide is preferred.

[0075] Examples of the monosaccharides include pentoses such as ribose, deoxyribose, arabinose and xylose, trioses, tetroses, hexoses and heptoses. Pentoses are preferred, ribose, deoxyribose, arabinose and xylose are more preferred, and ribose or deoxyribose is further preferred.

[0076] Examples of the disaccharides include sucrose, lactose, maltose, trehalose, turanose, and cellobiose.

[0077] Examples of the polysaccharides include glycogen, starch, and cellulose.

[0078] The sugars may be in a chain or cyclic form, but are preferably in a cyclic form.

[0079] Examples of the cyclic sugars include a furanose ring and a pyranose ring.

[0080] The polyoxyalkylene group which may have a substituent means a group containing a polyoxyalkylene group which may have a substituent in a part of the group.

[0081] Examples of the polyoxyalkylene group constituting the polyoxyalkylene-containing group include a polyoxyethylene group, a polyoxypropylene group, and a polyoxybutylene group, and a polyoxyethylene group is preferred.

[0082] As substituents possessed by the above-mentioned alkyl groups, the above-mentioned amino groups, the above-mentioned sugar groups and the above-mentioned polyoxyalkylene-containing groups, for example, hydrocarbon groups such as alkyl groups, aryl groups and benzyl groups which may have substituents; halogen atoms such as fluorine atoms, chlorine atoms and bromine atoms; alkoxy groups; hydroxyl groups; alkoxycarbonyl groups such as methoxycarbonyl and ethoxycarbonyl groups; acyl groups such as acetyl, propionyl and benzoyl groups; cyano groups; and nitro groups.

[0083] In addition, as the substituent which the above-mentioned alkyl group which may have a substituent may have, the groups exemplified as the substituent mentioned above can be mentioned, and more specifically, an aryl group and a heteroaryl group can be mentioned.

[0084] As R C1 , preferably a hydrogen atom or an amino group which may have a substituent, and more preferably an amino group which may have a substituent.

[0085] As R C1 Another preferred aspect of the present invention is preferably an alkyl group which may have a substituent, a thiol group, a hydroxyl group, a halogen atom, a sugar group which may have a substituent, or a polyoxyalkylene-containing group which may have a substituent.

[0086] As R C2 , preferably a hydrogen atom or an alkyl group which may have a substituent, more preferably a hydrogen atom.

[0087] As R C3 , preferably a hydrogen atom, an alkyl group which may have a substituent, or a glycosyl group which may have a substituent, more preferably a hydrogen atom or a glycosyl group which may have a substituent, and further preferably a hydrogen atom.

[0088] In formula (C2), L C1 Indicates -CR C6 =N- or -C(=O)-NR C7 -.L C2 Indicates -N=CH- or -NR C8 -C(=O)-. C4 ~R C8 Each independently represents a hydrogen atom, an alkyl group which may have a substituent, an amino group which may have a substituent, a thiol group, a hydroxyl group, a halogen atom, a sugar group which may have a substituent, or a polyoxyalkylene-containing group which may have a substituent.

[0089] As R C4 ~R C8 The form of each group represented by the formula (C1) can be exemplified by R C1 ~R C3 The form of each group represented.

[0090] As R C4 ~R C5 , preferably a hydrogen atom or an alkyl group which may have a substituent, more preferably a hydrogen atom.

[0091] As R C6 , preferably a hydrogen atom, an alkyl group which may have a substituent, or an amino group which may have a substituent, and more preferably a hydrogen atom.

[0092] As L C1 , preferably -C(=O)-NR C7 -.

[0093] As R C7 , preferably a hydrogen atom or an alkyl group which may have a substituent, more preferably a hydrogen atom.

[0094] As L C2 , preferably -N=CH-.

[0095] As R C8 , preferably a hydrogen atom or an alkyl group which may have a substituent, more preferably a hydrogen atom.

[0096] In formula (C3), R C9 ~R C11 Each independently represents a hydrogen atom, an alkyl group which may have a substituent, an amino group which may have a substituent, a thiol group, a hydroxyl group, a halogen atom, a sugar group which may have a substituent, or a polyoxyalkylene-containing group which may have a substituent.

[0097] As R C9 ~R C11 The form of each group represented by the formula (C1) can be exemplified by R C1 ~R C3 Represents the group.

[0098] As R C9 , preferably a hydrogen atom or an alkyl group which may have a substituent, more preferably a hydrogen atom.

[0099] As R C10 , preferably a hydrogen atom, an alkyl group which may have a substituent, or an amino group which may have a substituent, more preferably a hydrogen atom or an amino group which may have a substituent, and further preferably an amino group which may have a substituent.

[0100] As R C11 , preferably a hydrogen atom or an alkyl group which may have a substituent, more preferably a hydrogen atom.

[0101] In formula (C4), R C12 ~R C14Each independently represents a hydrogen atom, an alkyl group which may have a substituent, an amino group which may have a substituent, a thiol group, a hydroxyl group, a halogen atom, a sugar group which may have a substituent, or a polyoxyalkylene-containing group which may have a substituent.

[0102] As R C12 ~R C14 The form of each group represented by the formula (C1) can be exemplified by R C1 ~R C3 Represents the group.

[0103] As R C12 , preferably a hydrogen atom or an alkyl group which may have a substituent, and more preferably an alkyl group which may have a substituent.

[0104] As R C12 Another preferred aspect is preferably an alkyl group which may have a substituent, an amino group which may have a substituent, a thiol group, a hydroxyl group, a halogen atom, a sugar group which may have a substituent, or a polyoxyalkylene-containing group which may have a substituent.

[0105] As R C13 , preferably a hydrogen atom or an alkyl group which may have a substituent, and more preferably an alkyl group which may have a substituent.

[0106] As R C14 , preferably a hydrogen atom or an alkyl group which may have a substituent.

[0107] [Chemical formula 2]

[0108]

[0109] In formula (C5), R C15 and R C16 each independently represents a hydrogen atom, an alkyl group which may have a substituent, an amino group which may have a substituent, a thiol group, a hydroxyl group, a halogen atom, a sugar group which may have a substituent, or a polyoxyalkylene-containing group which may have a substituent,

[0110] As R C15 and R C16 The form of each group represented by the formula (C1) can be exemplified by R C1 ~R C3 Represents the group.

[0111] As R C15 , preferably a hydrogen atom, an alkyl group which may have a substituent, or an amino group which may have a substituent, and more preferably an amino group which may have a substituent.

[0112] As R C16, preferably a hydrogen atom, an alkyl group which may have a substituent, or a glycosyl group which may have a substituent, more preferably a hydrogen atom or a glycosyl group which may have a substituent, and further preferably a hydrogen atom.

[0113] In formula (C6), R C17 ~R C19 Each independently represents a hydrogen atom, an alkyl group which may have a substituent, an amino group which may have a substituent, a thiol group, a hydroxyl group, a halogen atom, a sugar group which may have a substituent, or a polyoxyalkylene-containing group which may have a substituent.

[0114] As R C17 ~R C19 The form of each group represented by the formula (C1) can be exemplified by R C1 ~R C3 Represents the group.

[0115] As R C17 ~R C19 , preferably a hydrogen atom or an alkyl group which may have a substituent, more preferably a hydrogen atom.

[0116] In formula (C7), R C20 ~R C22 Each independently represents a hydrogen atom, an alkyl group which may have a substituent, an amino group which may have a substituent, a thiol group, a hydroxyl group, a halogen atom, a sugar group which may have a substituent, or a polyoxyalkylene-containing group which may have a substituent.

[0117] As R C20 ~R C22 The form of each group represented by the formula (C1) can be exemplified by R C1 ~R C3 Represents the group.

[0118] As R C20 ~R C22 , preferably a hydrogen atom or an alkyl group which may have a substituent, more preferably a hydrogen atom.

[0119] In formula (C8), R C23 ~R C26 Each independently represents a hydrogen atom, an alkyl group which may have a substituent, an amino group which may have a substituent, a thiol group, a hydroxyl group, a halogen atom, a sugar group which may have a substituent, or a polyoxyalkylene-containing group which may have a substituent.

[0120] As R C23 ~R C26 The form of each group represented by the formula (C1) can be exemplified by R C1 ~R C3 Represents the group.

[0121] As R C23 ~R C26 , preferably a hydrogen atom or an alkyl group which may have a substituent, more preferably a hydrogen atom.

[0122] Examples of the purine compound include purine, adenine, guanine, hypoxanthine, xanthine, theobromine, caffeine, uric acid, isoguanine, adenosine, kinetin, enprophylline, theophylline, xanthoglobin, 7-methylxanthine, 7-methylxanthine, lentinan, dimethyladenine, methyladenine, 3-methylxanthine, 1,7-dimethylxanthine, 1-methylxanthine, 1,3-dipropyl-7-methylxanthine, 3,7-dihydroxy-7-methyl-1H-purine, -2,6-dione, 1,7-dipropyl-3-methylxanthine, 1-methyl-3,7-dipropylxanthine, 1,3-dipropyl-7-methyl-8-dicyclopropylmethylxanthine, 1,3-dibutyl-7-(2-oxopropyl)xanthine, 1-butyl-3,7-dimethylxanthine, 3,7-dimethyl-1-propylxanthine, mercaptopurine, 2-aminopurine, 6-benzylaminopurine (6-benzyladenine), nelarabine, adenosine, 2,6- Dichloropurine, acyclovir, N6-benzoyladenosine, trans-zeatin, entecavir, valacyclovir, abacavir, 2'-deoxyguanosine, disodium inosinate, ganciclovir, disodium guanosine 5'-monophosphate, 0-cyclohexylmethylguanine, N2-isobutyryl-2'-deoxyguanosine, β-nicotinamide adenine dinucleotide phosphate, 6-chloro-9-(tetrahydropyran-2-yl)purine, clofarabine, kinetin, 7-(2,3-dihydroxypropyl)theophylline, 6-mercaptopurine, Hydroxypropylphylline, 2,6-diaminopurine, 2',3'-dideoxyinosine, theophylline-7-acetic acid, 2-chloroadenine, 2-amino-6-chloropurine, 8-bromo-3-methylxanthine, 2-fluoroadenine, penciclovir, 9-(2-hydroxyethyl)adenine, 7-(2-chloroethyl)theophylline, 2-amino-6-iodopurine, 2-thioxanthine, 2-amino-6-methoxypurine, N-acetylguanine, adefovir dipivoxil, 8-chlorophylline and 6-methoxypurine.

[0123] Among them, the purine compound preferably includes at least one selected from purine, adenine, hypoxanthine, xanthine, theobromine, caffeine, uric acid, adenosine, 6-benzyladenine, kinetin, dimethyladenine, methyladenine, enprophylline, xanthine, 7-methylxanthine, 7-methylxanthine, theophylline, shiitake purine, paraxanthine, 3-methylxanthine, 1,7-dimethylxanthine and 1-methylxanthine, more preferably includes at least one selected from adenine, hypoxanthine, xanthine, adenosine, 6-benzyladenine, kinetin, dimethyladenine and methyladenine, and further preferably includes at least one selected from adenine, xanthine, adenosine, 6-benzyladenine, kinetin, dimethyladenine and methyladenine.

[0124] The purine compound may be used alone or in combination of two or more.

[0125] From the viewpoint of achieving more excellent effects of the present invention, the content of the purine compound is preferably 0.0000005 to 0.5% by mass, more preferably 0.000001 to 0.3% by mass, further preferably 0.00001 to 0.2% by mass, and particularly preferably 0.00001 to 0.05% by mass, based on the total mass of the treatment liquid.

[0126] From the viewpoint of further improving the effects of the present invention, the content of the purine compound is preferably 0.01 to 10.0% by mass, more preferably 0.02 to 8.0% by mass, and even more preferably 0.05 to 5.0% by mass, based on the total mass of components other than the solvent in the treatment liquid.

[0127] 〔Amine compounds〕

[0128] The treatment liquid contains an amine compound. The amine compound is a compound in which at least one hydrogen atom of ammonia is substituted with another substituent.

[0129] The amine compound is a compound different from the above-mentioned purine compound, and the purine compound is not included in the amine compound.

[0130] The amine compound includes at least two kinds of amine compounds, namely, one kind of amine compound A and one or more kinds of amine compounds B different from the amine compound A, which will be described later.

[0131] Amine compound A corresponds to one compound, and amine compound B corresponds to one or more compounds contained in the treatment liquid other than amine compound A. For example, when the treatment liquid contains one tertiary amine compound and two secondary amine compounds, one tertiary amine compound corresponds to amine compound A, and two secondary amine compounds correspond to amine compound B, respectively.

[0132] When the treatment liquid contains two or more tertiary amine compounds, the tertiary amine compound with the largest content is the amine compound A. When the contents of the two or more tertiary amine compounds are the same, any one of the tertiary amine compounds may be used as the amine compound A.

[0133] From the viewpoint of suitability for use in the present invention, the flash point of the amine compound is preferably -10 to 240°C, more preferably 10 to 220°C, and even more preferably 30 to 220°C.

[0134] From the viewpoint of achieving more excellent effects of the present invention, it is preferred that the amine compound has no cyclic structure.

[0135] From the viewpoint of achieving more excellent effects of the present invention, the SP (solubility parameter) value of the amine compound is preferably 11 to 33 MPa. 1 / 2 , more preferably 13 to 29 MPa 1 / 2 , more preferably 15 to 25 MPa 1 / 2 .

[0136] The SP value refers to a value calculated by the following formula (S) using the Hansen solubility parameter of the formula explained in Hansen solubility parameter: A User's Handbook, Second Edition, CM Hansen (2007), Taylor and Francis Group, LLC (HSPiP Handbook) and "Practical Hansen Solubility Parameters HSPiP 5th Edition" (software version 5.1.03).

[0137] Formula (S) (SP value) 2 =δ d 2 +δ p 2 +δ h 2 .

[0138] In the above formula (S), δ d represents the energy based on the dispersion force, δ p represents the energy based on dipole interaction, δ h represents the energy based on hydrogen bonds.

[0139] The amine compounds may be used in combination of three or more types.

[0140] From the viewpoint of further improving the effects of the present invention, the content of the amine compound is preferably 0.001 to 50.0 mass %, more preferably 0.01 to 30.0 mass %, further preferably 0.03 to 10.0 mass %, and particularly preferably 0.03 to 3.0 mass % relative to the total mass of the treatment liquid.

[0141] From the viewpoint of achieving more excellent effects of the present invention, the content of the amine compound is preferably 50.0 to 99.99% by mass, more preferably 70.0 to 99.99% by mass, further preferably 80.0 to 99.99% by mass, and particularly preferably 90 to 99.99% by mass, relative to the total mass of components other than the solvent in the treatment liquid.

[0142] The mass ratio of the content of the purine compound to the content of the amine compound (content of the purine compound / content of the amine compound) is 0.0001 to 0.1, and more preferably 0.0002 to 0.05 from the viewpoint of achieving more excellent effects of the present invention.

[0143] When the mass ratio of the content of the purine compound to the content of the amine compound is less than 0.0001, the metal component is easily corroded, and when it exceeds 0.1, the residue increases, which is not preferred. That is, if the mass ratio of the content of the purine compound to the content of the amine compound is outside the range of 0.0001 to 0.1, it is not possible to achieve both cleaning properties and corrosion resistance, which is not preferred.

[0144] In addition, "the content of the amine compound" means the total content of all the amine compounds contained in the treatment liquid.

[0145] <Amine compound A>

[0146] The amine compound includes an amine compound A.

[0147] The amine compound A is a tertiary amine compound having at least one tertiary amine group (>N-) in the molecule.

[0148] The nitrogen atom contained in the tertiary amine group of the amine compound A may be a ring member atom.

[0149] The amine compound A may have other substituents in addition to the tertiary amino group. Examples of the substituents include a hydroxyl group.

[0150] The amine compound A may have two or more tertiary amine groups. That is, the amine compound A may be a diamine compound or a polyamine compound.

[0151] From the viewpoint of achieving more excellent effects of the present invention, it is preferred that the amine compound A has no cyclic structure.

[0152] From the viewpoint of achieving more excellent effects of the present invention, the molecular weight of the amine compound A is preferably 60 to 300, more preferably 80 to 170, further preferably 100 to 160, and particularly preferably 105 to 150.

[0153] From the viewpoint of achieving more excellent effects of the present invention, the amine compound A preferably has 3 to 20 carbon atoms, more preferably 4 to 11 carbon atoms, further preferably 6 to 9 carbon atoms, and particularly preferably 6 to 8 carbon atoms.

[0154] From the viewpoint of achieving more excellent effects of the present invention, the pKa of the amine compound A is preferably 8.0 to 20.0, more preferably 10.0 to 18.0, and even more preferably 11.0 to 16.0.

[0155] In addition, pKa is an acid dissociation constant calculated using "Chemdraw" (registered trademark, manufactured by CambridgeSoft, software version 20.1.1.125).

[0156] When the compound has two or more pKa values, the pKa value having the largest value may be within the above-mentioned preferred range.

[0157] From the viewpoint of further improving the effects of the present invention, it is preferred that the amine compound A satisfies a plurality of the above-mentioned preferred conditions.

[0158] The amine compound A is preferably one selected from the group consisting of a compound represented by the formula (A1) and a compound represented by the formula (A2), and is more preferably a compound represented by the formula (A1).

[0159] [Chemical formula 3]

[0160] (A1) (A2)

[0161] In formula (A1), R A1 and R A2 Each independently represents an alkyl group which may have a substituent,

[0162] R A3 represents an alkylene group which may have a substituent,

[0163] In addition, R A1 ~R A3 Two of them may be bonded to each other via a single bond or a divalent linking group to form a ring.

[0164] R A1 and R A2 Each independently represents an alkyl group which may have a substituent.

[0165] The alkyl group may be linear, branched or cyclic.

[0166] The alkyl group has preferably 1 to 30 carbon atoms, more preferably 1 to 15 carbon atoms, further preferably 1 to 5 carbon atoms, and particularly preferably 1 to 3 carbon atoms.

[0167] Examples of the substituent that the alkyl group may have include halogen atoms such as fluorine, chlorine and bromine atoms; alkoxy groups; hydroxy groups; acyl groups such as acetyl, propionyl and benzoyl groups; cyano groups; and nitro groups, and a hydroxy group is preferred.

[0168] When the alkyl group has a hydroxyl group, the number of the hydroxyl groups in the alkyl group is preferably 1 to 5, more preferably 1 to 3, and even more preferably 1.

[0169] Among them, as R A1 and R A2 , preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 5 carbon atoms, further preferably a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group or a 2-hydroxyethyl group, and particularly preferably a methyl group, an ethyl group or an isopropyl group.

[0170] R A3 represents an alkylene group which may have a substituent,

[0171] The alkylene group may be linear, branched or cyclic.

[0172] The alkylene group has preferably 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, and even more preferably 1 to 4 carbon atoms.

[0173] Examples of the substituents that the alkylene group may have include: A1 and R A2 Possible substituents.

[0174] Among them, as R A3 , preferably an alkylene group having 1 to 6 carbon atoms, more preferably an alkylene group having 1 to 4 carbon atoms, further preferably methylene, ethylene, propylene, methylethylene, ethylethylene, 1-methylpropylene, 1,1-dimethylethylene or 1,2-dimethylethylene, especially preferably ethylene, methylethylene or 1,1-dimethylethylene.

[0175] R A1 ~R A3 Two of them may be bonded to each other via a single bond or a divalent linking group to form a ring. The ring formed above may be either a monocyclic ring or a polycyclic ring.

[0176] Examples of the divalent linking group include a divalent hydrocarbon group (e.g., a divalent aliphatic hydrocarbon group such as an alkylene group (preferably having 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms), an alkenylene group (preferably having 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms), and an alkynylene group (preferably having 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms), and a divalent aromatic hydrocarbon ring group such as an arylene group), a divalent heterocyclic group, -O-, -S-, -SO2-, -NH-, -N(Q)-, -CO-, or a group composed of these (e.g., -O-divalent hydrocarbon group-, -(O-divalent hydrocarbon group) m -O- (m represents an integer of 1 or more) and -divalent hydrocarbon group -O-CO-, etc.) Q represents a hydrogen atom or an alkyl group.

[0177] In R A1 ~R A3 When two of them are bonded to each other via a single bond or a divalent linking group to form a ring, the number of atoms forming the ring is preferably 3 to 20, more preferably 3 to 10, and even more preferably 5 to 6.

[0178] For example, in R A1 and R A2 When the bond is via a single bond or a divalent linking group, one R A1 The hydrogen atoms of the alkyl group in the bond position are used to form the bond and remove R A2 The bonding position formed by one of the hydrogen atoms of the alkyl group in the is bonded via a single bond or a divalent linking group.

[0179] More specifically, the compound represented by formula (A1) may be a compound represented by formula (A1-1). The compound represented by formula (A1-1) corresponds to A1 and R A2 A compound obtained by bonding via a single bond or a divalent linking group to form a ring.

[0180] [Chemical formula 4]

[0181] (A1-1)

[0182] In formula (A1-1), L A1 and L A2 Each independently represents an alkylene group which may have a substituent.

[0183] The alkylene group may be linear, branched or cyclic.

[0184] The alkylene group has preferably 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, and even more preferably 1 to 4 carbon atoms.

[0185] Examples of the substituents that the alkylene group may have include: A1 and RA2 Possible substituents.

[0186] Among them, as L A1 and L A2 , preferably an alkylene group having 1 to 6 carbon atoms, more preferably an alkylene group having 1 to 4 carbon atoms.

[0187] In formula (A1-1), L A3 represents a single bond or a divalent linking group. A3 The divalent linking group represented by A1 ~R A3 The group exemplified by a divalent linking group when two of the groups are bonded to each other via a single bond or a divalent linking group to form a ring.

[0188] As L A3 , preferably a single bond.

[0189] R in formula (A1-1) A3 The definition and preferred range of R in formula (A1) A3 The definition and preferred range are the same.

[0190] And, for example, in R A1 and R A3 When the bond is via a divalent linker, one R A1 The hydrogen atoms of the alkyl group in the bond position are used to form the bond and remove R A3 The bonding position formed by one of the hydrogen atoms of the alkylene group in the group is bonded via a single bond or a divalent linking group.

[0191] More specifically, the compound represented by formula (A1) may be a compound represented by formula (A1-2). The compound represented by formula (A1-2) corresponds to A1 and R A3 Compounds formed by bonding via a single bond or a divalent linking group to form a ring

[0192] [Chemical formula 5]

[0193] (A1-2)

[0194] In formula (A1-2), L A4 It represents an alkylene group which may have a substituent.

[0195] The alkylene group may be linear, branched or cyclic.

[0196] The alkylene group has preferably 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, and even more preferably 1 to 4 carbon atoms.

[0197] Examples of the substituents that the alkylene group may have include: A1 and R A2 Possible substituents.

[0198] Among them, as L A4 , preferably an alkylene group having 1 to 6 carbon atoms, more preferably an alkylene group having 1 to 4 carbon atoms.

[0199] In formula (A1-2), L A5 It represents a trivalent saturated aliphatic hydrocarbon group which may have a substituent.

[0200] The saturated aliphatic hydrocarbon group may be linear, branched or cyclic.

[0201] The saturated aliphatic hydrocarbon group has preferably 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, and even more preferably 1 to 4 carbon atoms.

[0202] Examples of the substituents that the saturated aliphatic hydrocarbon group may have include: A1 and R A2 Possible substituents.

[0203] Among them, as L A5 , preferably a trivalent saturated aliphatic hydrocarbon group having 1 to 6 carbon atoms, more preferably a trivalent saturated aliphatic hydrocarbon group having 1 to 4 carbon atoms.

[0204] In formula (A1-2), L A6 represents a single bond or a divalent linking group. A6 The divalent linking group represented by A1 ~R A3 The group exemplified by a divalent linking group when two of the groups are bonded to each other via a single bond or a divalent linking group to form a ring.

[0205] As L A6 , preferably a single bond.

[0206] R in formula (A1-2) A2 The definition and preferred range of R in formula (A1) A2 The definition and preferred range are the same.

[0207] As the compound represented by the formula (A1-2), a compound represented by the formula (A1-3) is preferred.

[0208] [Chemical formula 6]

[0209] (A1-3)

[0210] In formula (A1-3), L A7 represents a single bond or an alkylene group.

[0211] The alkylene group is preferably linear or branched.

[0212] The alkylene group has preferably 1 to 6 carbon atoms, more preferably 1 to 2 carbon atoms.

[0213] In formula (A1-3), R A9 It represents an alkyl group.

[0214] The above-mentioned alkyl group is preferably linear or branched.

[0215] The alkyl group has preferably 1 to 5 carbon atoms, more preferably 1 to 3 carbon atoms.

[0216] n represents 0 or 1. When n is 0, the compound represented by the formula (A1-3) has a 5-membered ring structure, and when n is 1, the compound represented by the formula (A1-3) has a 6-membered ring structure.

[0217] m represents an integer of 1 to 2. m is preferably 1.

[0218] l represents an integer from 0 to 4.

[0219] Examples of the compound represented by formula (A1) include 2-(diisopropylamino)ethanol, 2-(diethylamino)ethanol (DEAE), 2-(dimethylamino)ethanol (DMAE), 2-(dimethylamino)-2-methyl-1-propanol (DMAMP), N-tert-butyldiethanolamine (t-BDEA), 1-methyl-2-piperidinolmethanol, 4-hydroxy-1,2,2,6,6-pentamethylpiperidine (HOPEMP), 1-piperidinol, 1-methyl-3-piperidinolmethanol, 1-methyl-3-hydroxypyrrolidine and 3-hydroxy-1-methylpiperidine, N-methyldiethanolamine (MDEA), N-ethyldiethanolamine (EDEA), triethanolamine, 1-[bis(2-hydroxyethyl)amino]-2-propanol and 2-(dibutylamino)ethanol.

[0220] In formula (A2), R A4 ~R A7 Each independently represents an alkyl group which may have a substituent,

[0221] R A4 ~R A7 Two of them may be bonded to each other via a single bond or a divalent linking group to form a ring. A4 ~R A7 Two examples of ring formation in R A4 and R A7 and R A5 and R A6 These two may be bonded to each other via a single bond or a divalent linking group to form a ring.

[0222] R A8 It may have a hydroxyl group and may have -NR Ax - represents an alkylene group of the linking group, R Ax represents a hydrogen atom or an alkyl group.

[0223] R A4 ~R A7 Each independently represents an alkyl group which may have a substituent.

[0224] The alkyl group has preferably 1 to 30 carbon atoms, more preferably 1 to 15 carbon atoms, and even more preferably 1 to 6 carbon atoms.

[0225] Examples of the substituents that the alkyl group may have include R A1 and R A2 Possible substituents.

[0226] Among them, as R A4 ~R A7 , preferably an alkyl group having 1 to 3 carbon atoms, more preferably a methyl group, an ethyl group, a propyl group or an isopropyl group, and further preferably a methyl group.

[0227] R A8 It may have a hydroxyl group and may have -NR Ax - represents an alkylene group of the linking group, R Ax represents a hydrogen atom or an alkyl group.

[0228] The alkylene group has preferably 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and even more preferably 1 to 6 carbon atoms.

[0229] When the alkylene group has a hydroxyl group, the number of hydroxyl groups possessed by the alkyl group is preferably 1 to 5, more preferably 1 to 3, and even more preferably 1.

[0230] The above alkylene group has -NR Ax The number of the linking groups represented by - is preferably 0 to 3, more preferably 0 to 1, and even more preferably 0.

[0231] R Ax It represents a hydrogen atom or an alkyl group, preferably a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, more preferably a hydrogen atom, a methyl group, an ethyl group or an isopropyl group, and more preferably a methyl group.

[0232] R A4 ~R A7 Two of them may be bonded to each other via a single bond or a divalent linking group to form a ring. The ring formed above may be either a monocyclic ring or a polycyclic ring.

[0233] Examples of the divalent linking group include the above-mentioned R A1~R A3 The group exemplified by a divalent linking group when two of the groups are bonded to each other via a single bond or a divalent linking group to form a ring.

[0234] Examples of the compound represented by formula (A2) include tetramethyl-1,3-diaminobutane, tetramethyl-1,6-diaminohexane, tetramethyl-1,3-diaminopropane, pentamethyldipropylenetriamine, 1,4-bis(2-hydroxyethyl)piperazine (BHEP), 1,4-bis(2-aminoethyl)piperazine (BAEP), 1,4-bis(3-aminopropyl)piperazine (BAPP) and 1,4-diazabicyclo[2.2.2]octane (DABCO).

[0235] Among them, as the amine compound A, 2-(diisopropylamino)ethanol, DEAE, DMEA, DMAMP, 1-methyl-2-piperidinolmethanol, 4-hydroxy-1,2,2,6,6-pentamethylpiperidine, 1-piperidinol, 1-methyl-3-piperidinolmethanol, 1-methyl-3-hydroxypyrrolidine, t-BDEA, 3-hydroxy-1-methylpiperidin, tetramethyl-1,6-diaminohexane, tetramethyl-1,3-diaminopropane, pentamethyldipropylenetriamine or DABCO are preferred, and 2-(diisopropylamino)ethanol, DEAE, DMEA, DMAMP, 1-methyl-2-piperidinolmethanol, 4-hydroxy-1,2,2,6,6-pentamethylpiperidine, 1-piperidinol, 1-methyl-3-piperidinolmethanol, 1-methyl-3-hydroxypyrrolidine, t-BDEA, 3-hydroxy-1-methylpiperidin, tetramethyl-1,6-diaminohexane, tetramethyl-1,3-diaminopropane, pentamethyldipropylenetriamine or DABCO are more preferred. E, DMEA, DMAMP, 1-methyl-2-piperidinemethanol, 4-hydroxy-1,2,2,6,6-pentamethylpiperidine, 1-piperidineethanol, 1-methyl-3-piperidinemethanol, 1-methyl-3-hydroxypyrrolidine or t-BDEA, further preferably 2-(diisopropylamino)ethanol, DEAE, DMAMP, 1-methyl-2-piperidinemethanol, 4-hydroxy-1,2,2,6,6-pentamethylpiperidine (HOPEMP) or 1-piperidineethanol, especially preferably 2-(diisopropylamino)ethanol, DEAE or DMAMP.

[0236] From the viewpoint of further improving the effects of the present invention, the content of the amine compound A is preferably 0.0001 to 20.0 mass %, more preferably 0.0005 to 10.0 mass %, further preferably 0.001 to 5.0 mass %, and particularly preferably 0.001 to 0.5 mass % relative to the total mass of the treatment liquid.

[0237] From the viewpoint of achieving more excellent effects of the present invention, the content of the amine compound A is preferably 10.0 to 99.5% by mass, more preferably 15.0 to 90.0% by mass, further preferably 30.0 to 85.0% by mass, and particularly preferably 50.0 to 85.0% by mass, based on the total mass of components other than the solvent in the treatment liquid.

[0238] When the amine compound contains two or more tertiary amine compounds as described above, the tertiary amine compound with the largest content is amine compound A. For example, when the amine compound contains two tertiary amine compounds, the tertiary amine compound with the largest content is amine compound A, and the remaining tertiary amine compounds are amine compound B.

[0239] <Amine compound B>

[0240] The amine compound includes one or more amine compounds B different from the amine compound A.

[0241] Amine compound B is a compound of a different type from amine compound A, and examples thereof include compounds having at least one group selected from primary amine group (-NH2), secondary amine group (>NH) and tertiary amine group (>N-) (hereinafter also referred to as primary to tertiary amine groups). That is, as amine compound B, for example, primary amine compounds, secondary amine compounds and tertiary amine compounds can be listed. In addition, in the case of having amino groups of different orders, the amine compound with the highest order is classified.

[0242] The amine compound B may have a substituent other than the primary or tertiary amino group. Examples of the substituent include a hydroxyl group.

[0243] The amine compound B preferably has one primary or tertiary amino group and further has a group selected from a primary or tertiary amino group and a hydroxyl group.

[0244] From the viewpoint of better cleaning properties, at least one of the one or two or more amine compounds B is preferably an amine compound having two or more nitrogen atoms, and more preferably an amine compound having three or more nitrogen atoms.

[0245] From the viewpoint of more excellent effects of the present invention, it is also preferred that at least one of the one or two or more amine compounds B is a tertiary amine compound. When at least one of the one or two or more amine compounds B is a tertiary amine compound, the tertiary amine compound may be a compound represented by the above-mentioned formula (A2).

[0246] As tertiary amine compounds, for example, there can be listed piperazine compounds such as 1-methylpiperazine, 1-ethylpiperazine, 1-propylpiperazine and 1-butylpiperazine, polyamine compounds such as 2-(dimethylamino)ethylamine, 2-(diethylamino)ethylamine, N,N,N',N",N"-pentamethyldiethylenetriamine (PMDETA), and the compounds exemplified as amine compound A.

[0247] Examples of other amine compounds include primary amine compounds and secondary amine compounds, and specifically, monoamine compounds having only one group selected from primary and secondary amine groups and polyamine compounds having two or more groups selected from primary and secondary amine groups.

[0248] As the monoamine compound, a monoamine compound having a hydroxyl group is preferred, and examples thereof include diisopropanolamine, dimethanolamine, diethanolamine, 2-(ethylamino)ethanol, 2-(propylamino)ethanol, N-methylethanolamine (N-MEA), 2-amino-2-methyl-1-propanol (AMP), 2-methyl-2-(methylamino)propane-1-ol (MAMP), N-phenyldiethanolamine (Ph-DEA), N-butylethanolamine, and N-cyclohexylethanolamine.

[0249] Examples of the polyamine compound include ethylenediamine (EDA), 1,3-propanediamine (PDA), 1,2-propanediamine, 1,3-butanediamine, 1,4-butanediamine, isophoronediamine, 2-(dimethylamino)ethylamine, 1,2-bis(methylamino)ethane, 3-diethylaminopropylamine, 1,2-diaminocyclohexane, 1,4-diamino-3,6-diethylcyclohexane, diethylenetriamine (DETA), triethylenetetramine (TETA), bis[3-(dimethylamino)propyl]amine, and bis(aminopropyl)ethylenediamine (BAPEDA).

[0250] As the amine compound B, a compound represented by formula (A3) is also preferred.

[0251] [Chemical formula 7]

[0252] (A3)

[0253] In formula (A3), R A10 ~R A13 Each independently represents a hydrogen atom or an alkyl group which may have a substituent.

[0254] R A10 ~R A13 Two of them may be bonded to each other via a single bond or a divalent linking group to form a ring. A10 ~R A13 Two examples of ring formation in R A10 and R A13 and R A11 and R A12 These two may be bonded to each other via a single bond or a divalent linking group to form a ring.

[0255] R A14 It may have a hydroxyl group and may have -NR Ax - represents an alkylene group of the linking group. Ax represents a hydrogen atom or an alkyl group.

[0256] R A10 ~R A13 Each independently represents a hydrogen atom or an alkyl group which may have a substituent.

[0257] The alkyl group has preferably 1 to 30 carbon atoms, more preferably 1 to 15 carbon atoms, and even more preferably 1 to 6 carbon atoms.

[0258] Examples of the substituents that the alkyl group may have include R A1 and R A2 Possible substituents.

[0259] Among them, as R A10 ~R A13 , preferably a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, more preferably a hydrogen atom, a methyl group, an ethyl group, a propyl group or an isopropyl group, and further preferably a methyl group.

[0260] R A14 The definition and preferred form of R in formula (A2) A8 The definitions and preferred aspects are the same.

[0261] R A10 ~R A13 Two of them may be bonded to each other via a single bond or a divalent linking group to form a ring. The ring formed above may be either a monocyclic ring or a polycyclic ring.

[0262] Examples of the divalent linking group include the above-mentioned R A1 ~R A3 The group exemplified by a divalent linking group when two of the groups are bonded to each other via a single bond or a divalent linking group to form a ring.

[0263] Among them, it is preferred that the amine compound B contains at least one selected from 2-(dimethylamino)ethylamine, 1,2-bis(methylamino)ethane, PMDETA, AMP and diisopropanolamine, more preferably contains at least one selected from 2-(dimethylamino)ethylamine, 1,2-bis(methylamino)ethane and PMDETA, and further preferably contains PMDETA.

[0264] The amine compound B may be used alone or in combination of two or more.

[0265] From the viewpoint of further improving the effects of the present invention, the total content of the amine compounds B is preferably 0.0001 to 20.0 mass %, more preferably 0.0005 to 10.0 mass %, further preferably 0.001 to 5.0 mass %, and particularly preferably 0.001 to 0.1 mass % relative to the total mass of the treatment liquid.

[0266] From the viewpoint of achieving more excellent effects of the present invention, the total content of the amine compound B is preferably 5.0 to 99.5% by mass, more preferably 10.0 to 85.0% by mass, further preferably 10.0 to 70.0% by mass, and particularly preferably 15.0 to 50.0% by mass, relative to the total mass of the components other than the solvent in the treatment liquid.

[0267] In addition, the total content of the amine compounds B refers to the content of the compound itself when one type of amine compound B is used, and refers to the total content of these compounds when two or more types of amine compounds B are used.

[0268] The treatment liquid may contain other components besides the above-mentioned components (purine compound and amine compound).

[0269] Hereinafter, other components will be described in detail.

[0270] 〔water〕

[0271] The treatment liquid may contain water as a solvent.

[0272] The type of water used in the treatment liquid can be any type that does not adversely affect the semiconductor substrate, and distilled water, deionized (DI: De Ionized) water, and pure water (ultrapure water) can be used. Pure water (ultrapure water) is preferred from the viewpoint that it contains almost no impurities and has less impact on the semiconductor substrate in the manufacturing process of the semiconductor substrate.

[0273] The water content may be the remainder of the components that can be contained in the treatment liquid.

[0274] The water content is preferably 1.0% by mass or more, more preferably 30.0% by mass or more, further preferably 60.0% by mass or more, and particularly preferably 80.0% by mass or more, relative to the total mass of the treatment liquid. The upper limit is preferably 99.999% by mass or less, more preferably 99.99% by mass or less, further preferably 99.95% by mass or less, more preferably 99.9% by mass or less, further preferably 99.0% by mass or less, and particularly preferably 97.0% by mass or less, relative to the total mass of the treatment liquid.

[0275] [Other ingredients]

[0276] The treatment liquid may contain at least one component selected from the group consisting of a surfactant, a pH adjuster, an organic solvent, an organic acid, a polymer, a polyhydroxy compound having a molecular weight of 500 or more, and an oxidizing agent in addition to the above-mentioned compounds.

[0277] Other components are described below.

[0278] <Surfactant>

[0279] As the surfactant, as long as it is a compound having a hydrophilic group and a hydrophobic group (lipophilic group) in one molecule, there is no particular limitation. For example, nonionic surfactants and anionic surfactants can be mentioned.

[0280] Surfactants mostly have at least one hydrophobic group selected from aliphatic hydrocarbon groups, aromatic hydrocarbon groups, and groups formed by combining these.

[0281] The carbon number of all surfactants is preferably 16 to 100.

[0282] As the nonionic surfactant, for example, ester-type nonionic surfactants, ether-type nonionic surfactants, and ester-ether-type nonionic surfactants can be mentioned, and ether-type nonionic surfactants are preferred.

[0283] As the nonionic surfactant, for example, the compounds exemplified in paragraph

[0126] of International Publication No. 2022 / 044893 can also be cited, and these contents are incorporated into this specification.

[0284] As the anionic surfactant, for example, phosphate surfactants having a phosphate group, sulfonic acid surfactants having a sulfo group, phosphonic acid surfactants having a phosphonic acid group, carboxylic acid surfactants having a carboxyl group, and sulfate surfactants having a sulfate group can be mentioned.

[0285] As the anionic surfactant, for example, the compounds exemplified in paragraphs

[0116] and

[0123] of International Publication No. 2022 / 044893 can also be cited, and these contents are incorporated into this specification.

[0286] The surfactant can be used alone or in combination of two or more.

[0287] From the viewpoint of excellent performance of the treatment liquid, the content of the surfactant is preferably 0.0001 to 5.00% by mass, more preferably 0.0005 to 1.00% by mass, and further preferably 0.001 to 0.10% by mass based on the total mass of the treatment liquid.

[0288] From the viewpoint of excellent performance of the treatment liquid, the content of the surfactant is preferably 0.1 to 50.0% by mass, more preferably 0.5 to 30.0% by mass, and further preferably 1.0 to 10.0% by mass based on the total mass of the components other than the solvent in the treatment liquid.

[0289] <pH regulator>

[0290] In order to adjust and maintain the pH of the treatment liquid, the treatment liquid may contain a pH regulator.

[0291] The pH adjuster is a basic compound or an acidic compound different from the above-mentioned compounds (purine compounds and amine compounds, etc.) that can be contained in the treatment liquid. However, it is permitted to adjust the pH of the treatment liquid by adjusting the addition amount of each of the above-mentioned components.

[0292] The basic compound is a compound that exhibits alkalinity (pH exceeding 7.0) in an aqueous solution.

[0293] Examples of the basic compound include basic inorganic compounds.

[0294] Examples of the basic inorganic compound include alkali metal hydroxides such as sodium hydroxide and potassium hydroxide, and alkaline earth metal hydroxides.

[0295] The acidic compound is a compound that exhibits acidity (pH less than 7.0) in an aqueous solution.

[0296] Examples of the acidic compound include inorganic acids.

[0297] Examples of the inorganic acid include hydrochloric acid, sulfuric acid, sulfurous acid, nitric acid, nitrous acid, phosphoric acid, boric acid, and hexafluorophosphoric acid.

[0298] As the acidic compound, any salt of the acidic compound may be used as long as it is a compound that becomes an acid or an acid ion (anion) in an aqueous solution.

[0299] The pH adjuster may be used alone or in combination of two or more.

[0300] The content of the pH adjuster can be selected according to the type and amount of components other than the pH adjuster and the pH of the treatment liquid as the target. For example, the content of the pH adjuster is preferably 0.0001 to 10% by mass, more preferably 0.001 to 8% by mass, relative to the total mass of the treatment liquid.

[0301] The content of the pH adjuster is preferably 0.01 to 80% by mass, more preferably 0.1 to 60% by mass, based on the total mass of components other than the solvent in the treatment liquid.

[0302] <Organic Solvents>

[0303] Examples of the organic solvent include known organic solvents, such as alcohol solvents, glycol solvents, glycol ether solvents, and ketone solvents.

[0304] It is preferred that the organic solvent and water be mixed in any ratio.

[0305] Examples of the alcohol solvent include methanol, ethanol, propanol, isopropanol, 1-butanol, 2-butanol, isobutanol, and tert-butanol.

[0306] Examples of the glycol solvent include ethylene glycol, propylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, and tetraethylene glycol.

[0307] Examples of the glycol ether-based solvents include glycol monoethers.

[0308] Examples of the glycol monoethers include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol monoisopropyl ether, ethylene glycol mono-n-butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, 1-methoxy-2-propanol, 2-methoxy-1-propanol, 1-ethoxy-2-propanol, 2-ethoxy-1-propanol, propylene glycol mono-n-propyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol mono-n-propyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monomethyl ether, ethylene glycol monobenzyl ether and diethylene glycol monobenzyl ether.

[0309] Examples of the ketone solvent include acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone.

[0310] The organic solvent may be used alone or in combination of two or more.

[0311] The content of the organic solvent is preferably 0.001 to 5.00% by mass, more preferably 0.005 to 3.00% by mass, and even more preferably 0.01 to 1.00% by mass, relative to the total mass of the treatment liquid.

[0312] <Organic Acid>

[0313] Examples of the organic acid include carboxylic acids such as aliphatic carboxylic acids and aromatic carboxylic acids, and phosphonic acid.

[0314] The organic acid may be in the form of a salt. Examples of the salt include inorganic salts.

[0315] Examples of the aliphatic carboxylic acid include succinic acid, tartaric acid, maleic acid, oxalic acid, malonic acid, glutaric acid, adipic acid, pimelic acid, sebacic acid, formic acid, citric acid, malic acid, glycolic acid, gluconic acid, heptanoic acid, and lactic acid.

[0316] Examples of the aromatic carboxylic acid include phenyllactic acid, hydroxyphenyllactic acid, phenylsuccinic acid, phthalic acid, isophthalic acid, terephthalic acid, gallic acid, trimellitic acid, mellitic acid, and cinnamic acid.

[0317] As phosphonic acid, for example, compounds described in paragraphs

[0026] to

[0036] of International Publication No. 2018 / 020878 and compounds ((co)polymers) described in paragraphs

[0031] to

[0046] of International Publication No. 2018 / 030006 can be cited, and these contents are incorporated into this specification.

[0318] The organic acid may be used alone or in combination of two or more.

[0319] The content of the organic acid is preferably 0.0001 to 5.00% by mass, more preferably 0.0005 to 1.00% by mass, and even more preferably 0.001 to 0.10% by mass, relative to the total mass of the treatment liquid.

[0320] The content of the organic acid is preferably 0.1 to 50.0% by mass, more preferably 0.5 to 30.0% by mass, and even more preferably 1.0 to 10.0% by mass, based on the total mass of components other than the solvent in the treatment liquid.

[0321] <Polymer>

[0322] Examples of the polymer include water-soluble polymers.

[0323] The "water-soluble polymer" refers to a compound in which two or more structural units are linked in a linear or lattice form via covalent bonds and the mass of the compound dissolved in 100 g of water at 20°C is 0.1 g or more.

[0324] Examples of water-soluble polymers include polyacrylic acid, polymethacrylic acid, polymaleic acid, polyvinyl sulfonic acid, polyallyl sulfonic acid, polystyrene sulfonic acid and salts thereof; copolymers of monomers such as styrene, α-methylstyrene and / or 4-methylstyrene with acid monomers such as (meth)acrylic acid and / or maleic acid and salts thereof; polymers containing structural units having aromatic hydrocarbon groups formed by condensing benzenesulfonic acid and / or naphthalenesulfonic acid with formalin and salts thereof; polyglycerol; vinyl synthetic polymers such as polyvinyl alcohol, polyethylene oxide, polyvinyl pyrrolidone, polyvinyl pyridine, polyacrylamide, polyvinyl formamide, polyethylene imine, polyvinyl oxazoline, polyvinyl imidazole and polyallylamine; and modified products of natural polysaccharides such as hydroxyethyl cellulose, carboxymethyl cellulose and processed starch.

[0325] As the polymer, for example, the water-soluble polymers described in paragraphs

[0043] to

[0047] of JP-A-2016-171294 can be used, and these contents are incorporated into the present specification.

[0326] The molecular weight (weight average molecular weight when having a molecular weight distribution) of the polymer is preferably 300 or more, more preferably more than 600, further preferably more than 1000, particularly preferably more than 1000, and most preferably more than 2000. The upper limit is preferably 1500000 or less, more preferably 1000000 or less.

[0327] The polymer may be used alone or in combination of two or more.

[0328] The content of the polymer is preferably 0.0001 to 5.00% by mass, more preferably 0.0005 to 1.00% by mass, and even more preferably 0.001 to 0.10% by mass, relative to the total mass of the treatment liquid.

[0329] The content of the polymer is preferably 0.1 to 50.0% by mass, more preferably 0.5 to 30.0% by mass, and even more preferably 1.0 to 10.0% by mass, based on the total mass of components other than the solvent in the treatment liquid.

[0330] <Polyhydroxy compound having a molecular weight of 500 or more>

[0331] As the polyhydroxy compound, the compounds exemplified in paragraphs

[0101] and

[0102] of International Publication No. 2022 / 014287 and the like can be cited, and the contents thereof are incorporated into the present specification.

[0332] <Oxidant>

[0333] Examples of the oxidizing agent include peroxides, persulfides (eg, monopersulfide and dipersulfide), percarbonates, acids thereof, and salts thereof.

[0334] Examples of the oxidizing agent include oxidizing halides (periodic acid such as iodic acid, metaperiodic acid, and o-periodic acid, and salts thereof), perboric acid, perborate salts, cerium compounds, and ferrocyanides (potassium ferrocyanide, etc.).

[0335] The content of the oxidizing agent is preferably 0.0001 to 5.00% by mass, more preferably 0.0005 to 1.00% by mass, and even more preferably 0.001 to 0.10% by mass, relative to the total mass of the treatment liquid.

[0336] The content of the oxidizing agent is preferably 0.1 to 50.0% by mass, more preferably 0.5 to 30.0% by mass, and even more preferably 1.0 to 10.0% by mass, based on the total mass of components other than the solvent in the treatment liquid.

[0337] [Physical properties of treatment fluid]

[0338] Hereinafter, the properties of the treatment liquid will be described in detail.

[0339] <ph>

[0340] The treatment liquid may be either alkaline or acidic.

[0341] From the viewpoint of achieving more excellent effects of the present invention, the pH of the treatment liquid is preferably 8.0 to 14.0, more preferably 9.0 to 14.0, further preferably 10.0 to 14.0, and particularly preferably 10.0 to 13.5.

[0342] The pH of the treatment liquid can be measured using a known pH meter by a method in accordance with JIS Z8802-1984. The pH measurement temperature is set to 25°C.

[0343] <Metal Content>

[0344] The content (measured as ion concentration) of metals (e.g., metal elements of Fe, Co, Na, Cu, Mg, Mn, Li, Al, Cr, Ni, Zn, Sn, and Ag) contained as impurities in the treatment liquid is preferably 5 mass ppm or less, more preferably 1 mass ppm or less. Assuming that a further high-purity treatment liquid is required in the manufacture of the most advanced semiconductor elements, it is more preferred that the metal content is less than 1 mass ppm, that is, less than the mass ppb level, particularly preferably less than 100 mass ppb, and most preferably less than 10 mass ppb. As the lower limit, 0 is preferred.

[0345] Examples of methods for reducing the metal content include purification treatments such as distillation and filtration using an ion exchange resin or a filter at the stage of producing the raw materials used in the treatment liquid or after the treatment liquid is produced.

[0346] Other methods for reducing the metal content include using a container with less elution of impurities as described below as a container for storing raw materials or the manufactured process liquid, and lining the inner wall of the pipe with fluororesin to prevent the metal component from eluting from the pipe when the process liquid is manufactured.

[0347] <Coarse particles>

[0348] The treatment liquid may contain coarse particles, but the content thereof is preferably low.

[0349] The coarse particles are particles having a diameter (particle size) of 0.03 μm or more when the particle shape is regarded as a sphere.

[0350] The coarse particles contained in the treatment liquid are particles of dust, dust, organic solid matter, inorganic solid matter, etc. contained as impurities in the raw materials, and particles of dust, dust, organic solid matter, inorganic solid matter, etc. brought into the treatment liquid as contaminants, corresponding to particles that ultimately do not dissolve in the treatment liquid and exist as particles.

[0351] The content of coarse particles in the treatment liquid is preferably 10,000 or less, more preferably 5,000 or less, per 1 mL of the treatment liquid. The lower limit is preferably 0 or more, more preferably 0.01 or more.

[0352] The content of the coarse particles present in the treatment liquid can be measured in a liquid phase using a commercially available measuring device of a light scattering type liquid particle measuring method using a laser as a light source.

[0353] As a method for removing coarse particles, for example, purification treatment such as filtration described later can be cited.

[0354] [Manufacturing method]

[0355] The processing liquid can be produced by a known method. Hereinafter, the method for producing the processing liquid will be described in detail.

[0356] 〔Liquid preparation process〕

[0357] The treatment liquid can be produced by mixing the above-mentioned components, for example.

[0358] As a method for preparing the treatment liquid, for example, the following method can be cited: after sequentially adding a purine compound and an amine compound and optional components as required to a container filled with purified pure water, stirring and mixing them, and adding a pH adjuster as required to adjust the pH of the mixed solution, the treatment liquid is prepared. In addition, when adding water and various components to the container, they can be added all at once or in multiple times.

[0359] In the stirring device and stirring method used in the treatment liquid preparation, a known device may be used as a stirrer or a disperser. Examples of the stirrer include an industrial mixer, a portable stirrer, a mechanical stirrer, and a magnetic stirrer. Examples of the disperser include an industrial disperser, a homogenizer, an ultrasonic disperser, and a bead mill.

[0360] The mixing of the components in the treatment liquid preparation step, the purification treatment described later, and the storage of the produced treatment liquid are preferably performed at 40° C. or less, more preferably at 30° C. or less. Also, the lower limit is preferably 5° C. or more, more preferably 10° C. or more. By performing the treatment liquid preparation, treatment, and / or storage within the above temperature range, stable performance can be maintained for a long time.

[0361] <Purification>

[0362] It is preferred that at least one of the raw materials used for preparing the treatment liquid be subjected to a purification treatment in advance. Examples of the purification treatment include known methods such as distillation, ion exchange, and filtering.

[0363] The degree of purification is preferably such that the purity of the raw material reaches 99% by mass or more, and more preferably such that the purity of the raw material reaches 99.9% by mass or more. The upper limit is preferably 99.9999% by mass or less.

[0364] Examples of the purification method include a method of passing the raw material through an ion exchange resin or an RO membrane (Reverse Osmosis Membrane), distillation of the raw material, and filtration described below.

[0365] As a purification treatment, a plurality of the above purification methods may be combined. For example, after the raw material is purified once by passing it through an RO membrane, it may be purified twice by passing it through a purification device composed of a cation exchange resin, an anion exchange resin or a mixed bed type ion exchange resin.

[0366] Furthermore, the purification treatment may be performed multiple times.

[0367] As the filter for filtering, as long as it is a filter used for filtering purposes in the past, there is no particular restriction. For example, the filter composed of polyolefin resins (including high density or ultra-high molecular weight) such as polytetrafluoroethylene (PTFE) and tetrafluoroethylene perfluoroalkyl vinyl ether copolymer (PFA), polyamide resins such as nylon and polyethylene and polypropylene (PP) can be listed. Among these materials, it is preferably selected from the material in polyethylene, polypropylene (including high-density polypropylene), fluororesin (containing PTFE and PFA) and polyamide resin (including nylon), and more preferably a filter of fluororesin. By using the filter formed by these materials to filter the raw material, it is possible to effectively remove foreign matter with high polarity that is easily the cause of defects.

[0368] <Container>

[0369] As long as corrosivity etc. do not pose a problem, the treatment liquid (including a method of diluting the treatment liquid described below) can be filled in any container and stored, transported, and used.

[0370] As a container, for semiconductor applications, it is preferred that the cleanliness inside the container is high and impurities are suppressed from eluting into each liquid from the inner wall of the container's receiving portion. Examples of such containers include various commercially available containers for semiconductor processing liquids, such as the "CleaN-Bottle" series manufactured by AICELLO CHEMICAL CO., LTD. and the "Pure bottle" manufactured by KODAMAPLASTICS Co., Ltd., but are not limited to these.

[0371] Furthermore, as the container, the containers exemplified in paragraphs

[0121] to

[0124] of International Publication No. 2022 / 004217 can also be used, and these contents are incorporated into this specification.

[0372] These containers are preferably cleaned before filling with the treatment liquid. The liquid used for cleaning preferably reduces the amount of metal impurities in the solution. The treatment liquid can be bottled in a container such as a gallon bottle or a coating bottle for transportation and storage after production.

[0373] In order to prevent the change of the components in the treatment liquid during storage, the container can also be replaced with an inert gas (nitrogen or argon, etc.) with a purity of 99.99995% by volume or more. Gas with a low water content is particularly preferred. In addition, during transportation and storage, it can be room temperature, but in order to prevent deterioration, the temperature can be controlled in the range of -20°C to 20°C.

[0374] <Clean Room>

[0375] It is preferred that the manufacture of the treatment liquid, the opening and cleaning of the container, the operations including the filling of the treatment liquid, the treatment analysis and the measurement are all performed in a clean room. It is preferred that the clean room meets the 14644-1 clean room standard. It is preferred that any one of ISO (International Organization for Standardization) grade 1, ISO grade 2, ISO grade 3 and ISO grade 4 be met, and it is more preferred that ISO grade 1 or ISO grade 2 be met, and it is further preferred that ISO grade 1 be met.

[0376] [Dilution process]

[0377] The above-mentioned treatment liquid can be supplied to the treatment of the object as a diluted treatment liquid (diluted treatment liquid) after being subjected to a dilution step of diluting the treatment liquid with a diluent such as water.

[0378] Furthermore, as long as the requirements of the present invention are satisfied, a diluted treatment liquid is also one embodiment of the treatment liquid of the present invention.

[0379] The diluent used in the dilution step is preferably purified in advance. Also, the diluted solution obtained in the dilution step is preferably purified.

[0380] Examples of the purification treatment include the ion component reduction treatment using an ion exchange resin or RO membrane or the like and foreign matter removal using filtration described as the purification treatment for the treatment liquid. It is preferred to perform any of these treatments.

[0381] The dilution rate of the treatment liquid in the dilution process can be appropriately adjusted according to the type and content of each component and the object to be treated. Preferably, the ratio of the diluted treatment liquid to the treatment liquid before dilution (dilution ratio) is 10 to 10,000 times in terms of mass ratio or volume ratio (volume ratio at 23°C), more preferably 20 to 3,000 times, and even more preferably 50 to 1,000 times.

[0382] Furthermore, from the viewpoint of achieving better cleaning properties, the treatment liquid is preferably diluted with water.

[0383] The change in pH before and after dilution (the difference between the pH of the treatment liquid before dilution and the pH of the diluted treatment liquid) is preferably 2.0 or less, more preferably 1.8 or less, and even more preferably 1.5 or less.

[0384] The pH of the treatment liquid before dilution and the pH of the diluted treatment liquid are preferably the above-mentioned preferred embodiments.

[0385] The specific method of the dilution step of diluting the treatment liquid may be carried out based on the above treatment liquid preparation step. The stirring device and stirring method used in the dilution step may also be carried out using the known stirring devices listed in the above treatment liquid preparation step.

[0386] [Purpose of use]

[0387] The processing liquid of the present invention can be used for various materials used in the manufacture of semiconductors. Hereinafter, the object to which the processing liquid of the present invention is applied will be described in detail.

[0388] The above-mentioned treatment liquid can be used, for example, to treat insulating films, resists, anti-reflective films, etching residues, and ashing residues on the substrate. The above-mentioned treatment liquid is preferably used as a cleaning liquid, and more preferably used in a cleaning process for cleaning an object (especially a semiconductor substrate) subjected to CMP treatment.

[0389] As described above, when the treatment liquid is used, it can be used as a diluted treatment liquid obtained by diluting the treatment liquid.

[0390] 〔Object〕

[0391] Examples of the object to be treated with the treatment liquid include an object having a metal, and preferably a semiconductor substrate having a metal.

[0392] In addition, when the semiconductor substrate has metal, for example, the metal may be present at any of the surface and back surface, side surfaces, and grooves of the semiconductor substrate. Furthermore, when the semiconductor substrate has metal, it includes not only the case where the metal is present directly on the surface of the semiconductor substrate, but also the case where the metal is present on the semiconductor substrate via other layers.

[0393] As the metal, for example, at least one metal M selected from copper (Cu), cobalt (Co), ruthenium (Ru), aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), chromium (Cr), hafnium (Hf), osmium (Os), platinum (Pt), nickel (Ni), manganese (Mn), iron (Fe), zirconium (Zr), molybdenum (Mo), palladium (Pd), lanthanum (La) and iridium (Ir) can be listed, preferably Cu, Co or Ru, and more preferably Cu or Co.

[0394] That is, the target object is preferably an object containing at least one metal selected from Cu and Co.

[0395] The metal may be any substance containing a metal (metal atom), and examples thereof include a simple substance of a metal M and an alloy containing the metal M.

[0396] The object to be treated by the processing liquid may include, for example, a semiconductor substrate, a metal wiring film, a barrier metal, and an insulating film.

[0397] Examples of wafers constituting a semiconductor substrate include silicon (Si) wafers, silicon carbide (SiC) wafers, silicon-containing resin wafers (glass epoxy wafers), and other wafers made of silicon-based materials, gallium phosphide (GaP) wafers, gallium arsenide (GaAs) wafers, and indium phosphide (InP) wafers.

[0398] Examples of silicon wafers include n-type silicon wafers doped with pentavalent atoms (e.g., phosphorus (P), arsenic (As), and antimony (Sb)) and p-type silicon wafers doped with trivalent atoms (e.g., boron (B) and gallium (Ga)). Examples of silicon in silicon wafers include amorphous silicon, single crystal silicon, multicrystalline silicon, and polycrystalline silicon.

[0399] Among them, a wafer made of a silicon-based material such as a silicon wafer, a silicon carbide wafer, and a resin-based wafer containing silicon (glass epoxy wafer) is preferable.

[0400] As insulating films, for example, silicon oxide films (such as silicon dioxide (SiO2) films and tetraethyl orthosilicate (Si(OC2H5)4) films (TEOS films)), silicon nitride films (such as silicon nitride (Si3N4) and silicon carbide nitride (SiNC)), and low dielectric constant (Low-k) films (such as carbon-doped silicon oxide (SiOC) films and silicon carbide (SiC) films), etc., are listed, and low dielectric constant (Low-k) films are preferred.

[0401] As the metal wiring film, a copper-containing film, a cobalt-containing film, and a ruthenium-containing film are preferable.

[0402] Examples of the copper-containing film include a wiring film composed only of metallic copper (copper wiring film) and an alloy wiring film composed of metallic copper and other metals (copper alloy wiring film).

[0403] Examples of the copper alloy wiring film include alloy wiring films composed of copper and one or more metals selected from Al, Ti, Cr, Mn, Ta, and W. More specifically, examples include copper-aluminum alloy wiring films (CuAl alloy wiring films), copper-titanium alloy wiring films (CuTi alloy wiring films), copper-chromium alloy wiring films (CuCr alloy wiring films), copper-manganese alloy wiring films (CuMn alloy wiring films), copper-tantalum alloy wiring films (CuTa alloy wiring films), and copper-tungsten alloy wiring films (CuW alloy wiring films).

[0404] Examples of the cobalt-containing film include a metal film composed only of metal cobalt (cobalt metal film) and an alloy metal film composed of metal cobalt and other metals (cobalt alloy metal film).

[0405] Examples of the cobalt alloy metal film include alloy metal films composed of cobalt and one or more metals selected from Ti, Cr, Fe, Ni, Mo, Pd, Ta and W. More specifically, examples include cobalt-titanium alloy metal films (CoTi alloy metal films), cobalt-chromium alloy metal films (CoCr alloy metal films), cobalt-iron alloy metal films (CoFe alloy metal films), cobalt-nickel alloy metal films (CoNi alloy metal films), cobalt-molybdenum alloy metal films (CoMo alloy metal films), cobalt-palladium alloy metal films (CoPd alloy metal films), cobalt-tantalum alloy metal films (CoTa alloy metal films) and cobalt-tungsten alloy metal films (CoW alloy metal films).

[0406] The processing liquid is useful for a substrate having a cobalt-containing film. Among the cobalt-containing films, cobalt metal films are often used as wiring films, and cobalt alloy metal films are often used as barrier metals.

[0407] Examples of the ruthenium-containing film include a metal film composed of only metal ruthenium (ruthenium metal film) and a metal film made of an alloy composed of metal ruthenium and other metals (ruthenium alloy metal film). The ruthenium-containing film is often used as a barrier metal.

[0408] The method for forming the insulating film, the copper-containing film, the cobalt-containing film, and the ruthenium-containing film on the wafer constituting the semiconductor substrate is not particularly limited as long as it is a method commonly performed in this field.

[0409] As a method for forming an insulating film, for example, a method can be cited in which a silicon oxide film is formed by heat treating a wafer constituting a semiconductor substrate in the presence of oxygen, and then a silicon nitride film is formed by flowing silane and ammonia gas and by chemical vapor deposition (CVD).

[0410] As a method for forming a copper-containing film, a cobalt-containing film, and a ruthenium-containing film, for example, the following method can be cited: a circuit is formed on a wafer having the above-mentioned insulating film by a known method such as an anti-etching agent, and then a copper-containing film, a cobalt-containing film, and a ruthenium-containing film are formed by methods such as gold plating and CVD.

[0411] <Object to be CMP-processed>

[0412] As the object when the processing liquid is used for cleaning, an object subjected to CMP processing (particularly, a semiconductor substrate) is preferable, and an object subjected to CMP processing containing at least one metal selected from Cu and Co is more preferable.

[0413] The CMP process is a process for planarizing the surface of a semiconductor substrate having a metal wiring film, a barrier metal, and an insulating film by a combined action of chemical action and mechanical polishing, for example, using a polishing slurry containing polishing particles (abrasive grains).

[0414] Impurities such as abrasive grains (e.g., silicon dioxide and aluminum oxide) used in the CMP process, polished metal wiring films, and metal impurities (metal residues) derived from barrier metals may remain on the surface of the object subjected to the CMP process. In addition, organic impurities derived from the CMP treatment liquid used in the CMP process may also remain. These impurities may, for example, cause short circuits between wirings and deteriorate the electrical characteristics of the semiconductor substrate, so the semiconductor substrate subjected to the CMP process is subjected to a cleaning process for removing these impurities from the surface.

[0415] As a specific example of an object subjected to CMP processing, a substrate subjected to CMP processing described in Journal of Precision Engineering Vol. 84, No. 3, 2018 can be cited, but it is not limited to this.

[0416] <Object to be polished>

[0417] When a processing liquid is used for cleaning, the object (particularly, a semiconductor substrate) may be subjected to a polishing process after being subjected to a CMP process.

[0418] Polishing is a process for reducing impurities on the surface of a semiconductor substrate using a grinding pad. Specifically, the surface of a semiconductor substrate subjected to CMP treatment is brought into contact with a grinding pad, a polishing composition is supplied to the contact portion, and the semiconductor substrate and the grinding pad are relatively slid. As a result, impurities on the surface of the semiconductor substrate are removed by the frictional force of the grinding pad and the chemical action of the polishing composition.

[0419] As the polishing composition, a known polishing composition can be appropriately used according to the type of semiconductor substrate and the type and amount of impurities to be removed. As components contained in the polishing composition, for example, water-soluble polymers such as polyvinyl alcohol, water as a dispersion medium, and acids such as nitric acid can be listed.

[0420] Furthermore, as one embodiment of the polishing treatment, it is also preferable to use a treatment liquid as a polishing composition.

[0421] The grinding device and grinding conditions used in the polishing process can be appropriately selected from known devices and conditions according to the type of semiconductor substrate and the object to be removed. As a polishing process, for example, the processes described in paragraphs

[0085] to

[0088] of International Publication No. 2017 / 169539 can be cited, and these contents are incorporated into this specification.

[0422] [How to use the treatment solution]

[0423] The treatment liquid can be used by a known method. The method of using the treatment liquid will be described in detail below.

[0424] 〔Processing procedures〕

[0425] As a method of using the treatment liquid, for example, a method for treating an object including a process of contacting the object with the treatment liquid can be cited. Hereinafter, the process of contacting the object with the treatment liquid is also referred to as a "contact process".

[0426] There is no particular limitation on the method for contacting the object with the treatment liquid, and examples thereof include a method of immersing the object in the treatment liquid placed in a tank, a method of spraying the treatment liquid on the object, a method of flowing the treatment liquid over the object, and a combination thereof. The above method can be appropriately selected according to the purpose.

[0427] Furthermore, the above method can appropriately adopt a method commonly used in this field. For example, it can be a wiping method in which a treatment liquid is supplied and a cleaning member such as a brush is brought into physical contact with the surface of the object to remove residues, etc., and a rotation (dropping) method in which the object is rotated and the treatment liquid is dripped. In the immersion method, it is preferred to perform ultrasonic treatment on the object immersed in the treatment liquid from the viewpoint of further reducing impurities remaining on the surface of the object.

[0428] The contact between the object and the treatment liquid in the contact step may be performed only once or twice or more. When performed twice or more, the same method may be repeated or different methods may be combined.

[0429] The contact process may be performed by either a single wafer method or a batch method.

[0430] The single-piece method is generally a method of processing each object one by one, and the batch method is generally a method of processing a plurality of objects at the same time.

[0431] The temperature of the treatment liquid is not particularly limited as long as it is a temperature usually used in this field. Generally, cleaning is performed at room temperature (about 25° C.), but in order to improve the cleaning performance and suppress the damage to the components, the temperature can be arbitrarily selected. For example, the temperature of the treatment liquid is preferably 10 to 60° C., and more preferably 15 to 50° C.

[0432] The contact time between the object and the treatment liquid can be appropriately changed according to the type and content of each component contained in the treatment liquid and the object and purpose of use of the treatment liquid. In practice, it is preferably 10 to 120 seconds, more preferably 20 to 90 seconds, and even more preferably 30 to 60 seconds.

[0433] The supply amount (supply rate) of the treatment liquid is preferably 50 to 5000 mL / min, more preferably 500 to 2000 mL / min.

[0434] In the contacting step, a mechanical stirring method may be used to further enhance the cleaning ability of the treatment solution.

[0435] Examples of the mechanical stirring method include a method of circulating the processing liquid on the object, a method of flowing or spraying the processing liquid on the object, and a method of stirring the processing liquid with ultrasonic waves or megasonic waves.

[0436] Furthermore, after the contacting step, a step of contacting the object to be processed with a rinsing liquid (hereinafter, also referred to as a "rinsing step") may be performed. By performing the rinsing step, the object to be processed obtained in the contacting step can be cleaned with the rinsing liquid to effectively remove residues.

[0437] The rinsing step is preferably a step of rinsing the object to be processed using a rinsing liquid and is performed continuously after the semiconductor substrate cleaning step. The rinsing step can be performed using the above-mentioned mechanical stirring method.

[0438] Examples of the rinse liquid include water (preferably DI water), methanol, ethanol, isopropyl alcohol (IPA), N-methylpyrrolidone, γ-butyrolactone, dimethyl sulfoxide, ethyl lactate, and propylene glycol monomethyl ether acetate. In addition, an aqueous rinse liquid having a pH exceeding 8.0 (such as diluted aqueous ammonium hydroxide) can be used.

[0439] As a method of bringing the rinse liquid into contact with the object to be processed, the above-mentioned method of bringing the processing liquid into contact with the object to be processed can also be applied in the same manner.

[0440] The contact time between the treated object and the rinse solution can be appropriately changed according to the type and content of each component contained in the treatment solution and the object and purpose of use of the treatment solution. In practice, it is preferably 10 to 120 seconds, more preferably 20 to 90 seconds, and further preferably 30 to 60 seconds.

[0441] In addition, after the above-mentioned rinsing step, a drying step of drying the processed object may be performed.

[0442] Examples of the drying method include a spin drying method, a method of passing a dry gas over the workpiece, a method of heating the substrate by a heating mechanism such as a hot plate and an infrared lamp, a Marangoni drying method, a Notagni drying method, an IPA drying method, and any combination of these methods.

[0443] [Method for manufacturing electronic device]

[0444] The above-mentioned method for treating an object to be treated can be preferably applied to a manufacturing process of an electronic device.

[0445] The above-mentioned treatment method can be combined and implemented before or after other steps performed on the substrate. The above-mentioned treatment method can be incorporated into other steps when being implemented, and the above-mentioned treatment method can also be incorporated into other steps and implemented.

[0446] As other processes, for example, there can be listed processes for forming structures such as metal wiring, gate structure, source structure, drain structure, insulating film, ferromagnetic layer and non-magnetic layer (such as layer formation, etching, chemical mechanical polishing and modification, etc.), resist formation process, exposure process and removal process, heat treatment process, cleaning process and inspection process.

[0447] The above processing method can be performed at any stage of the back end of the line (BEOL), middle of the line (MOL) and front end of the line (FEOL), preferably in the front end or middle process.

[0448] Example

[0449] Hereinafter, the present invention will be described in further detail based on examples.

[0450] The materials, usage amounts, ratios, etc. shown in the following examples can be appropriately changed without departing from the gist of the present invention. Therefore, the scope of the present invention is not to be interpreted as being limited to the following examples.

[0451] In the following examples, the pH of the treatment liquid was measured at 25° C. using a pH meter (manufactured by HORIBA, Ltd., model “F-74”) in accordance with JIS Z8802-1984.

[0452] Furthermore, when the treatment liquids of Examples and Comparative Examples were produced, the handling of containers, the preparation, filling, storage, and analysis and measurement of the treatment liquids were all performed in a clean room satisfying ISO Class 2 or lower.

[0453] [Raw materials of treatment fluid]

[0454] The following compounds were used to prepare the treatment liquid. In addition, each component used in the examples was classified as a semiconductor level component or a high purity level component based on the semiconductor level component.

[0455] 〔Purine compounds〕

[0456] Adenine (corresponding to the compound represented by formula (C5))

[0457] ·6-Benzyl adenine (corresponding to the compound represented by formula (C5))

[0458] Kinetin (corresponding to the compound represented by formula (C5))

[0459] · Dimethyladenine (corresponding to the compound represented by formula (C5))

[0460] ·Methyladenine (corresponding to the compound represented by formula (C5))

[0461] Adenosine (corresponding to the compound represented by formula (C5))

[0462] ·Xanthine (corresponding to the compound represented by formula (C7))

[0463] Hypoxanthine (corresponding to the compound represented by formula (C6))

[0464] 〔Amine compounds〕

[0465] DMAMP: 2-(dimethylamino)-2-methyl-1-propanol (pKa=14.8, molecular weight 117)

[0466] DEAE: 2-(diethylamino)ethanol (pKa=14.8, molecular weight 117)

[0467] 2-(Diisopropylamino)ethanol (pKa=14.8, molecular weight 145)

[0468] 1-Methyl-2-piperidinol (pKa=14.8, molecular weight 129)

[0469] ·HOPEMP: 4-Hydroxy-1,2,2,6,6-pentamethylpiperidine (pKa=14.5, molecular weight 171)

[0470] 1-Piperidineethanol (pKa=14.8, molecular weight 129)

[0471] DMAE: 2-(dimethylamino)ethanol (pKa=14.8, molecular weight 89)

[0472] 1-Methyl-3-piperidinol (pKa=14.8, molecular weight 129)

[0473] 1-Methyl-3-hydroxypyrrolidine (pKa=14.5, molecular weight 101)

[0474] t-BDEA: N-tert-butyldiethanolamine (pKa=14.8, molecular weight 161)

[0475] ·Tetramethyl-1,6-diaminohexane (pKa=10.1, molecular weight 172)

[0476] ·Tetramethyl-1,3-diaminopropane (pKa=8.6, molecular weight 130)

[0477] Pentamethyldipropylenetriamine (pKa = 10.0, molecular weight 201)

[0478] ·DABCO: 1,4-diazabicyclo[2.2.2]octane (pKa=1.7, molecular weight 112)

[0479] ·3-Hydroxy-1-methylpiperidine (pKa=14.6, molecular weight 115)

[0480] PMDETA: N,N,N',N",N"-pentamethyldiethylenetriamine (pKa = 9.6, molecular weight 173)

[0481] ·2-(Dimethylamino)ethylamine (pKa=10.0, molecular weight 88)

[0482] 1,2-Bis(methylamino)ethane (pKa=6.7, molecular weight 88)

[0483] ·Diisopropanolamine (pKa=14.6, molecular weight 133)

[0484] AMP: 2-amino-2-methyl-1-propanol (pKa=14.8, molecular weight 89)

[0485] When the amine compound has a plurality of pKa values, the amine compound has the largest pKa value among the above.

[0486] 〔Other compounds〕

[0487] Succinic acid

[0488] ·tartaric acid

[0489] Maleic acid

[0490] Polyacrylic acid (Mw = 4,000)

[0491] EGBE: Ethylene glycol mono-n-butyl ether

[0492] IPA: Isopropyl alcohol

[0493] In the treatment liquid, the remaining components (remaining part) not explicitly indicated as the components of the treatment liquid in the table are ultrapure water.

[0494] [Manufacturing of treatment liquid]

[0495] Next, a method for producing a treatment liquid will be described by taking Example 1 as an example.

[0496] Adenine, DMAMP, and PMDETA were added to ultrapure water in amounts such that the treatment liquid finally obtained would have the amounts shown in the following table. The treatment liquid of Example 1 was obtained by sufficiently stirring the obtained mixed liquid.

[0497] According to the production method of Example 1, treatment liquids of each Example or each Comparative Example having the composition shown in the following table were produced.

[0498] [Evaluation of Processing Liquid 1: Semiconductor Substrate after CMP]

[0499] The obtained treatment liquid was evaluated for its anticorrosive property and cleaning property. The evaluation method will be described below.

[0500] 〔Evaluation of Corrosion Resistance〕

[0501] Using the treatment liquid produced by the above method, the corrosion resistance against Cu and Co was evaluated.

[0502] A 2×2 cm Cu or Co wafer was prepared.

[0503] The above wafer was placed in a container containing the processing solution of each embodiment or each comparative example, and immersed in the processing solution for 30 minutes at room temperature (25°C). Then, the content of Cu and Co in the immersed processing solution was measured by Agilent 8800 triple quadrupole ICP-MS (for semiconductor analysis, option #200), and the etching rate was obtained.

[0504] The corrosion resistance of the treatment liquid was evaluated according to the following evaluation criteria: The lower the etching rate, the better the corrosion resistance.

[0505] A: less than

[0506] B: More than and less than

[0507] C: More than and less than

[0508] D: above

[0509] [Evaluation of cleaning properties]

[0510] The cleaning performance of the processing liquid produced by the above method when cleaning a semiconductor substrate subjected to a CMP process was evaluated.

[0511] Using FREX300S-II (polishing apparatus, EBARA CORPORATION), polishing liquid 1 was used as the polishing liquid, and a wafer (diameter 12 inches) having a Cu film or a Co film on the surface was polished under the conditions of an in-plane average value of a polishing pressure of 105 hPa, a polishing liquid supply rate of 200 mL / min, and a polishing time of 30 seconds. Next, polishing liquid 2 was used as the polishing liquid, and the wafer subjected to the above-mentioned polishing treatment was polished under the conditions of an in-plane average value of a polishing pressure of 70 hPa, a polishing liquid supply rate of 200 mL / min, and a polishing time of 60 seconds.

[0512] The obtained wafer subjected to CMP treatment was wipe-cleaned for 1 minute using a sample of the treatment liquid adjusted to room temperature (23° C.), and then dried.

[0513] In addition, the compositions of the polishing liquid 1 and the polishing liquid 2 are as follows.

[0514] Grinding liquid 1 (pH 7.0)

[0515]

[0516] Grinding liquid 2 (pH 10.5)

[0517]

[0518] Next, using a defect detection device (AMAT, ComPlus-II), the number of signal intensities corresponding to defects with a length of more than 0.1 μm on the polished surface of the obtained wafer was measured. Then, each defect was observed using a scanning electron microscope (SEM), and the constituent elements of the measurement object were identified using an energy dispersive X-ray spectrometer (EDX) as needed.

[0519] Thus, the number of defects caused by organic residues (residues mainly composed of organic matter) on the polished surface of the wafer was obtained.

[0520] The cleaning properties of the processing liquid were evaluated according to the following evaluation criteria: The smaller the number of defects detected on the polished surface of the wafer, the better the cleaning properties.

[0521] A: The number of target defects is less than 20

[0522] B: The number of target defects is more than 20 and less than 40

[0523] C: The number of target defects is more than 40 and less than 60

[0524] D: The number of object defects exceeds 60

[0525] [result]

[0526] In the table, the column "Content (mass %)" indicates the content (mass %) of each component relative to the total mass of the treatment liquid.

[0527] In the "Formula" column in the table, the amine compound described in the column on the left side of the "Formula" column is represented by the formula (A1) as "A1" and is represented by the formula (A2) as "A2".

[0528] In the table, in the "Molecular weight" column, the case where the molecular weight of the amine compound described in the column on the left side of the "Molecular weight" column is 100 to 160 is represented by "A", and the case other than that is represented by "B".

[0529] In the table, in the column "Number of carbon atoms", the case where the molecular weight of the amine compound described in the column on the left side of the column "Number of carbon atoms" is 6 to 9 is indicated as "A", and the case other than that is indicated as "B".

[0530] In the "cyclic structure" column of the table, the case where the amine compound described in the column on the left side of the "cyclic structure" column has a cyclic structure is indicated as "A", and the case where it does not have a cyclic structure is indicated as "B".

[0531] In the table, the numerical value in the column "(I) / (II)" represents the mass ratio of the content (I) of the purine compound to the content (¨) of the amine compound (content (I) of the purine compound / content (II) of the amine compound).

[0532] In the table, the values ​​in the pKa column are acid dissociation constants calculated using "Chemdraw" (registered trademark, manufactured by CambridgeSoft, software version 20.1.1.125).

[0533] When the amine compound has a plurality of pKa values, the amine compound has the largest pKa value among the above.

[0534] In the table, the numerical value in the pH column indicates the pH of the treatment liquid at 25° C. measured by the above-mentioned pH meter.

[0535]

[0536]

[0537] From the above table, it was confirmed that the treatment liquid of the present invention has excellent corrosion protection against Cu and Co and also has excellent cleaning properties against organic residues on the surface of the treated object.

[0538] From the comparison of Examples 1 to 13, it was confirmed that when the amine compound A was a compound represented by the formula (A1), the cleaning property was more excellent.

[0539] From the comparison of Examples 1 to 15 (particularly, the comparison of Examples 11 to 14 with other Examples), it was confirmed that when the pKa of the amine compound A was 8.0 to 20.0 (preferably 11.0 to 16.0), the corrosion resistance of Cu was more excellent.

[0540] From the comparison of Examples 1 to 10 (particularly, the comparison of Examples 5, 7, and 10 with other Examples), it was confirmed that when the molecular weight of the amine compound A was 100 to 160, the corrosion resistance of Co was more excellent.

[0541] From the comparison of Examples 1 to 10 (particularly, the comparison of Examples 5 and 9 with other Examples), it was confirmed that when the number of carbon atoms of the amine compound A was 6 to 9, the corrosion resistance of Co was more excellent.

[0542] From the comparison between Examples 1 to 10 and 15 (particularly, the comparison between Examples 4, 6, and 8 and other Examples), it was confirmed that the effect of the present invention is more excellent when the amine compound does not have a cyclic structure.

[0543] From the comparison of Examples 18 to 26, it was confirmed that the corrosion resistance was more excellent when the purine compound contained at least one selected from adenine, 6-benzyladenine, kinetin, dimethyladenine, methyladenine, xanthine, and adenosine.

[0544] From the comparison of Examples 15 to 18, it was confirmed that when the amine compound B has two or more nitrogen atoms, the cleaning property is more excellent, and when the amine compound B has three or more nitrogen atoms, the cleaning property is further excellent.

[0545] From the comparison of Examples 15 to 18, it was confirmed that when the amine compound B was a tertiary amine compound, the cleaning property was more excellent.

[0546] From the comparison between Examples 26 and 33, it was confirmed that the effect of the present invention is excellent even when the concentration of the treatment liquid is different.

[0547] Furthermore, the treatment solution described in Example 33 was diluted 50 times by mass using ultrapure water as a diluent. The same evaluation was carried out using the obtained diluted treatment solution according to the above evaluation process, and the same evaluation results as those of Example 33 were obtained.

[0548] [Evaluation of treatment liquid 2: semiconductor substrate after polishing and cleaning]

[0549] According to the process described in [Evaluation of Cleaning Properties] of [Evaluation of Processing Liquid 1: Semiconductor Substrate after CMP], a wafer (diameter 12 inches) having a Cu film or a Co film on the surface was polished.

[0550] The polished surface of the wafer subjected to the above CMP treatment was subjected to buffing and cleaning under the following conditions using FREX300S-II (polishing apparatus, manufactured by EBARA CORPORATION).

[0551] ·Workbench speed: 80rpm

[0552] Head speed: 78rpm

[0553] Average grinding pressure in the plane: 138hPa

[0554] · Grinding pad: IC1400 made by NTTTA DuPont Incorporated.

[0555] Cleaning liquid: the treatment liquid used in Example 1

[0556] Cleaning liquid supply speed: 250mL / min

[0557] Grinding time: 20 seconds

[0558] The obtained wafer subjected to polishing cleaning was wiped and cleaned for 1 minute using the treatment solution used in Example 1 adjusted to room temperature (23°C), and then dried. Then, the number of defects based on organic residues in the polished surface of the wafer was determined according to the process described in the evaluation of the cleaning property of Evaluation 1. As a result, the same evaluation result as in Example 1 was obtained.

[0559] Even when the processing liquid used in Examples 2 to 47 was used instead of the processing liquid used in Example 1, the same evaluation results as those of the respective Examples shown in Tables 1 and 2 were obtained.

[0560] Furthermore, when a diluted treatment liquid obtained by diluting the treatment liquid used in Example 33 by 50 times by mass was used instead of the treatment liquid used in Example 1, the same evaluation results as those in Example 33 were obtained.< / ph>

Claims

1. A semiconductor processing liquid comprising a purine compound and an amine compound, The purine compound comprises at least one selected from purine and purine derivatives, The amine compound includes one amine compound A and one or more amine compounds B different from the amine compound A. The amine compound A is a tertiary amine compound, The mass ratio of the content of the purine compound to the content of the amine compound is 0.0001 to 0.

1.

2. The semiconductor processing liquid according to claim 1, wherein The amine compound A is one selected from the group consisting of a compound represented by formula (A1) and a compound represented by formula (A2), <h2 style=";text-align:left;direction:ltr">(A1)<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr"> (A2)<h2 style=";text-align:left;direction:ltr"> In formula (A1), R A1 and R A2 Each independently represents an alkyl group which may have a substituent, R A3 represents an alkylene group optionally having a substituent, R A1 ~R A3 Two of them are optionally bonded to each other via a single bond or a divalent linking group to form a ring, In formula (A2), R A4 ~R A7 Each independently represents an alkyl group which may have a substituent, R A4 ~R A7 Two of them are optionally bonded to each other via a single bond or a divalent linking group to form a ring, R A8 represents optionally having a hydroxyl group and optionally having -NR Ax - represents an alkylene group of the linking group, R Ax represents a hydrogen atom or an alkyl group.

3. The semiconductor processing liquid according to claim 1, wherein the pH thereof is 10.0 to 14.

0.

4. The semiconductor processing liquid according to claim 1, wherein The purine compound comprises at least one selected from the group consisting of a compound represented by formula (C5) and a compound represented by formula (C7), (C5) (C7) In formula (C5), R C15 and R C16 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an amino group optionally having a substituent, a thiol group, a hydroxyl group, a halogen atom, a sugar group optionally having a substituent, or a polyoxyalkylene-containing group optionally having a substituent, In formula (C7), R C20 ~R C22 Each independently represents a hydrogen atom, an alkyl group which may have a substituent, an amino group which may have a substituent, a thiol group, a hydroxyl group, a halogen atom, a sugar group which may have a substituent, or a polyoxyalkylene-containing group which may have a substituent.

5. The semiconductor processing liquid according to claim 1, wherein At least one of the one or more amine compounds B is a tertiary amine compound.

6. The semiconductor processing liquid according to claim 1, wherein At least one of the one or more amine compounds B is an amine compound having two or more nitrogen atoms.

7. The semiconductor processing liquid according to claim 1, wherein At least one of the one or more amine compounds B is an amine compound having three or more nitrogen atoms.

8. The semiconductor processing liquid according to claim 1, wherein The pKa of the amine compound A is 11.0 to 16.

0.

9. The semiconductor processing liquid according to claim 1, wherein The molecular weight of the amine compound A is 100-160.

10. The semiconductor processing liquid according to claim 1, wherein The amine compound A has 6 to 9 carbon atoms.

11. The semiconductor processing liquid according to claim 1, wherein The purine compound includes at least one selected from the group consisting of adenine, 6-benzyladenine, kinetin, dimethyladenine, methyladenine, xanthine and adenosine.

12. The semiconductor processing liquid according to claim 1, which is used as a cleaning liquid.

13. The semiconductor processing liquid according to claim 1, which is used for an object subjected to a chemical mechanical polishing process.

14. The semiconductor processing liquid according to claim 1, which is used for an object containing at least one metal selected from Cu and Co.

15. The semiconductor processing liquid according to claim 1, which is used for an object containing at least one metal selected from Cu and Co subjected to a chemical mechanical polishing process.

16. A method for treating an object to be treated, comprising: A step of bringing an object containing at least one metal selected from Cu and Co, which has been subjected to chemical mechanical polishing, into contact with the semiconductor processing liquid according to any one of claims 1 to 15.

17. A method for manufacturing an electronic device, comprising the method for processing an object to be processed according to claim 16.

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