Semiconductor manufacturing apparatus and semiconductor device manufacturing method

Abstract

The purpose of the present invention is to provide a technique capable of suppressing debris of a semiconductor wafer from scattering and adhering to the surface of a semiconductor device when picking up the semiconductor device that is singulated from the semiconductor wafer. This semiconductor manufacturing device is provided with: a sheet holding unit that holds a sheet (10) that has a base material (11) and an adhesive layer (12) that is provided on the surface of the base material (11) and that adheres a semiconductor wafer (1); and an adhesive force reduction unit which is disposed so as to be able to act on the sheet (10) held by the sheet holding unit, and which reduces the adhesive force in a predetermined region of the adhesive layer (12) of the sheet (10). A predetermined region of the adhesive layer (12) is a region to which chips (3) of the semiconductor wafer that do not function as the semiconductor device (2) are adhered.

Description

Technical Field

[0001] The present invention relates to a semiconductor manufacturing device and a method for manufacturing a semiconductor device. Background Art

[0002] In conventional semiconductor manufacturing apparatus, ultraviolet rays are irradiated from the bottom surface of a semiconductor device that has been completely cut off from a sheet having a property in which the adhesive force is reduced by ultraviolet rays, and the semiconductor devices are peeled off from the sheet piece by piece and picked up by the up and down movement of a push rod and an adsorption chuck (see, for example, Patent Document 1).

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 3-206643 Summary of the invention

[0004] Near the periphery of the semiconductor wafer, a plurality of small semiconductor wafer fragments that cannot form a rectangular semiconductor device are inevitably generated. The semiconductor wafer fragments cannot be used as semiconductor devices, and after the semiconductor device is picked up from the semiconductor wafer, the semiconductor wafer fragments are treated as waste together with the sheet. The size of the semiconductor wafer fragments varies depending on the size of the semiconductor device to be formed. Therefore, with the miniaturization of semiconductor devices in recent years, the semiconductor wafer fragments are also miniaturized.

[0005] In the prior art, when picking up semiconductor devices separated from semiconductor wafers, fragments of the semiconductor wafer bonded to the sheet fly around, and as a result, the fragments of the semiconductor wafer sometimes adhere to the surface of the semiconductor device, causing a malfunction of the semiconductor device.

[0006] Therefore, an object of the present invention is to provide a technique capable of suppressing the scattering of fragments of the semiconductor wafer and their adhesion to the surface of the semiconductor device when picking up semiconductor devices singulated from a semiconductor wafer.

[0007] The semiconductor manufacturing device to which the present invention relates manufactures a plurality of semiconductor devices obtained by singulating a semiconductor wafer, and the semiconductor manufacturing device comprises: a sheet holding portion, which holds a sheet having a substrate and an adhesive layer, wherein the adhesive layer is provided on the first main surface of the substrate and adheres the semiconductor wafer; and an adhesive force reducing portion, which is configured to act on the sheet held by the sheet holding portion to reduce the adhesive force of a predetermined area of ​​the adhesive layer of the sheet, wherein the predetermined area of ​​the adhesive layer is an area to which fragments of the semiconductor wafer that do not function as the semiconductor device are adhered.

[0008] Effects of the Invention

[0009] According to the present invention, it is possible to remove semiconductor wafer fragments before picking up semiconductor devices singulated from the semiconductor wafer, thereby preventing semiconductor wafer fragments from scattering and adhering to the surface of the semiconductor device when picking up the semiconductor devices singulated from the semiconductor wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is a plan view of a semiconductor wafer installed in the semiconductor manufacturing apparatus according to the first embodiment.

[0011] Figure 2 This is a side view showing a structure related to reduction of adhesive force in the semiconductor manufacturing apparatus according to the first embodiment.

[0012] Figure 3 This is a side view showing an example of a structure related to removal of semiconductor wafer fragments in the semiconductor manufacturing apparatus according to the first embodiment.

[0013] Figure 4 This is a side view showing another example of the structure related to the removal of semiconductor wafer fragments in the semiconductor manufacturing apparatus according to the first embodiment.

[0014] Figure 5 This is a side view showing another example of the structure related to the removal of semiconductor wafer fragments in the semiconductor manufacturing apparatus according to the first embodiment.

[0015] Figure 6 This is a side view showing another example of the structure related to the removal of semiconductor wafer fragments in the semiconductor manufacturing apparatus according to the first embodiment.

[0016] Figure 7 This is a flowchart of the semiconductor manufacturing method involved in Embodiment 1.

[0017] Figure 8 This is a side view showing a structure related to reduction of adhesive force in a semiconductor manufacturing apparatus according to the second embodiment. DETAILED DESCRIPTION

[0018] <Implementation Method 1>

[0019] <Structure of semiconductor manufacturing equipment>

[0020] The following description will be given of Embodiment 1 using the drawings. Figure 1 It is a top view of the semiconductor wafer 1 installed in the semiconductor manufacturing apparatus according to the first embodiment. Figure 2 This is a side view showing a structure related to reduction of adhesive force in the semiconductor manufacturing apparatus according to the first embodiment.

[0021] First, a semiconductor wafer 1 provided in a semiconductor manufacturing apparatus will be described. Figure 1 As shown, the semiconductor wafer 1 is formed into a disk shape. A plurality of semiconductor devices 2 are formed on the semiconductor wafer 1 through processes such as coating, patterning, exposure, and etching. Then, the semiconductor wafer 1 is singulated by dicing, thereby processing the semiconductor wafer 1 into a form in which a plurality of semiconductor devices 2 can be taken out.

[0022] At this time, a plurality of small semiconductor wafer fragments 3 that do not form a rectangular semiconductor device 2 are inevitably generated near the peripheral portion of the semiconductor wafer 1. The semiconductor wafer fragments 3 do not function as semiconductor devices 2 and cannot be used. Therefore, the semiconductor wafer fragments 3 are treated as waste.

[0023] Next, the semiconductor manufacturing apparatus according to the first embodiment will be described. Figure 2 As shown, the semiconductor manufacturing apparatus includes a frame fixing unit 20 (corresponding to a sheet holding unit), a scanning energy irradiation device 32 (corresponding to an adhesive force reducing unit), and a rotating unit 40.

[0024] The frame fixing unit 20 includes: a frame supporting component 21, which is arranged on the substrate 11 side of the sheet 10 to support the sheet 10 from the substrate 11 side; and a frame pressing component 22, which is arranged on the adhesive layer 12 side of the sheet 10 to press the sheet 10 from the adhesive layer 12 side. The frame fixing unit 20 holds the sheet 10 through the frame supporting component 21 and the frame pressing component 22.

[0025] The sheet 10 has a base material 11 and an adhesive layer 12, and the adhesive layer 12 is provided on the surface of the base material 11 (corresponding to the first main surface) and is bonded to the semiconductor wafer 1. The sheet 10 is formed into a disk shape to match the shape of the semiconductor wafer 1, and has a plan view profile larger than the plan view profile of the semiconductor wafer 1. A plurality of semiconductor devices 2 singulated by dicing in the semiconductor wafer 1 and fragments 3 of the semiconductor wafer are bonded to the adhesive layer 12 of the sheet 10.

[0026] The frame fixing unit 20 fixes and supports the dicing frame 4 attached to the peripheral portion of the semiconductor wafer 1. Specifically, the frame support member 21 supports the entire region or a portion of the peripheral portion of the substrate 11 of the sheet 10, and the frame pressing member 22 presses the entire region or a portion of the dicing frame 4 toward the frame support member 21, thereby fixing the sheet 10 to which the semiconductor wafer 1 is attached in a stretched state without being loosened.

[0027] A rotating unit 40 is provided inside or outside the frame fixing unit 20 to rotate the frame fixing unit 20 so as to reverse the vertical positional relationship between the frame supporting member 21 and the frame pressing member 22 of the frame fixing unit 20. The rotating unit 40 is composed of, for example, a motor and gears.

[0028] The adhesive layer 12 of the sheet material uses an adhesive whose adhesive force is reduced by energy. Here, the energy for reducing the adhesive force is any one of light including ultraviolet (UV), heating, cooling or radiation.

[0029] like Figure 2 As shown, the energy irradiation device 32 is arranged to act on the sheet 10 held by the frame fixing unit 20. Specifically, the energy irradiation device 32 is arranged below the base material 11 of the sheet 10. The energy irradiation device 32 irradiates energy for reducing the adhesive force to the sheet 10 while scanning.

[0030] The energy irradiation device 32 irradiates the energy for reducing the adhesive force to the area of ​​the sheet 10 (i.e., the adhesive layer 12) to which the fragments 3 of the semiconductor wafer present near the peripheral portion of the semiconductor wafer 1 are attached, thereby reducing the adhesive force of the adhesive layer 12 of the sheet 10. Here, the energy irradiation area is preferably set to about 1mm×1mm to 20mm×20mm corresponding to the size of the fragments 3 of the semiconductor wafer. In addition, when the energy for reducing the adhesive force is heating, it is preferred to set the temperature of the sheet 10 to 60°C to 200°C, and when cooling, it is preferred to set the temperature of the sheet 10 to -90°C to -40°C. In addition, the area of ​​the adhesive layer 12 to which the fragments 3 of the semiconductor wafer are attached corresponds to a predetermined area for reducing the adhesive force.

[0031] By reducing the adhesive force of the adhesive layer 12 of the sheet 10 to which the semiconductor wafer fragments 3 are attached, the semiconductor wafer fragments 3 can be removed before the semiconductor device 2 is picked up from the sheet 10. Therefore, when picking up the singulated semiconductor device 2, it is possible to suppress the semiconductor wafer fragments 3 from scattering and adhering to the surface of the semiconductor device 2. In addition, when removing the semiconductor wafer fragments 3, the adhesiveness of the adhesive layer 12 to the semiconductor device 2 is maintained, so that the semiconductor device 2 can be suppressed from peeling off from the sheet 10.

[0032] Next, use Figure 3 to Figure 6 A specific method for removing the semiconductor wafer fragments 3 after reducing the adhesive force of the adhesive layer 12 of the sheet 10 will be described. Figure 3 1 is a side view showing an example of a structure related to the removal of the fragments 3 of the semiconductor wafer in the semiconductor manufacturing apparatus according to the first embodiment. Figure 3 to Figure 6 In the figure, the energy irradiation device 32 is omitted.

[0033] like Figure 3 As shown, relative to Figure 2 The frame fixing unit 20 is rotated by the rotating unit 40 so that the vertical positional relationship between the frame supporting member 21 and the frame pressing member 22 of the frame fixing unit 20 is reversed, thereby holding the sheet 10 in a manner such that the adhesive layer 12 of the sheet 10 is facing downward. In addition, the semiconductor manufacturing apparatus further includes a pressing unit 23, which is arranged above the base material 11 of the sheet 10. Here, since the adhesiveness of the adhesive layer 12 of the sheet 10 is maintained, the semiconductor device 2 will not be peeled off from the sheet 10.

[0034] When removing the fragments 3 of the semiconductor wafer, by moving either the pressing unit 23 or the sheet 10 in the horizontal direction, the pressing unit 23 is arranged above the fragments 3 of the semiconductor wafer to be removed.

[0035] Next, the pressing unit 23 is lowered so that the lower end of the pressing unit 23 contacts the substrate 11 of the sheet 10, thereby pressing down the semiconductor wafer fragments 3 through the sheet 10. The pressing unit 23 can be moved up and down by driving a motor or an air cylinder (not shown).

[0036] Since the fragments 3 of the semiconductor wafer peeled from the sheet 10 by the pressing unit 23 can be removed downward, it is possible to suppress the fragments 3 of the semiconductor wafer from adhering to the surface of the semiconductor device 2 and causing a malfunction.

[0037] Figure 4 This is a side view showing another example of the structure related to the removal of the semiconductor wafer fragments 3 in the semiconductor manufacturing apparatus according to the first embodiment.

[0038] like Figure 4 As shown, relative to Figure 2 The semiconductor manufacturing apparatus further comprises a push-up unit 24, a camera 25, an air gun 26 and a control unit 41. Figure 2 The frame fixing unit 20 holds the sheet material 10 in a manner such that the base material 11 of the sheet material 10 faces downward, similarly to the structure of FIG.

[0039] The camera 25 is disposed above the sheet 10 so as to monitor the entire surface of the sheet 10 and recognize the semiconductor wafer fragments 3. The air gun 26 is disposed above the sheet 10 and sprays gas toward the semiconductor wafer fragments 3. The control unit 41 controls the camera 25 and the air gun 26.

[0040] The push-up unit 24 is disposed below the base material 11 of the sheet 10. Here, by moving either the push-up unit 24 or the sheet 10 in the horizontal direction, the push-up unit 24 is disposed below the fragments 3 of the semiconductor wafer to be removed.

[0041] Next, the push-up unit 24 is raised so that the upper end of the push-up unit 24 contacts the substrate 11 of the sheet 10, thereby pushing up the semiconductor wafer fragment 3 via the sheet 10. The push-up unit 24 can be moved up and down by driving a motor or an air cylinder (not shown).

[0042] When the fragments 3 of the semiconductor wafer are peeled off from the adhesive layer 12 of the sheet 10 by the push-up unit 24, the possibility of scattering is very high. Therefore, when the camera 25 recognizes the fragments 3 of the semiconductor wafer peeled off from the adhesive layer 12 by the push-up unit 24, the control unit 41 controls to eject gas from the air gun 26 to remove the fragments 3 of the semiconductor wafer from above the adhesive layer 12. In this way, it is possible to suppress the fragments 3 of the semiconductor wafer from adhering to the surface of the semiconductor device 2. Here, the camera 25 and the air gun 26 are not limited to one group, and two or more groups may be provided. In addition, the gas ejected from the air gun 26 may be dry nitrogen in addition to dry air.

[0043] Figure 5 This is a side view showing another example of the structure related to the removal of the semiconductor wafer fragments 3 in the semiconductor manufacturing apparatus according to the first embodiment.

[0044] like Figure 5 As shown, relative to Figure 2 The semiconductor manufacturing apparatus further includes a tape disassembly unit 42. The tape disassembly unit 42 peels off the tape 27 after sticking the tape 27 to the surface of the semiconductor wafer 1 opposite to the surface in contact with the adhesive layer 12. The tape 27 has a lower adhesive force than the adhesive layer 12 before the adhesive force is reduced and a higher adhesive force than the adhesive layer 12 after the adhesive force is reduced.

[0045] At this time, since the adhesiveness of the adhesive layer 12 to the semiconductor device 2 is maintained, only the fragments 3 of the semiconductor wafer can be removed from the sheet 10 without peeling the semiconductor device 2 by the tape 27. Therefore, when picking up the singulated semiconductor device 2, it is possible to suppress the fragments 3 of the semiconductor wafer from scattering and adhering to the surface of the semiconductor device 2.

[0046] Figure 6 This is a side view showing another example of the structure related to the removal of the semiconductor wafer fragments 3 in the semiconductor manufacturing apparatus according to the first embodiment.

[0047] like Figure 6 As shown, relative to Figure 2 The semiconductor manufacturing apparatus further includes a tape holding portion 43 and a push-up unit 24. The tape holding portion 43 holds the tape 27 above the semiconductor wafer 1 in such a manner that the adhesive surface of the tape 27 and the surface of the semiconductor wafer 1 opposite to the surface in contact with the adhesive layer 12 face each other, and the tape 27 has a lower adhesive force than the adhesive layer 12 before the adhesive force is reduced and a higher adhesive force than the adhesive layer 12 after the adhesive force is reduced. The push-up unit 24 is arranged below the base material 11 of the sheet 10.

[0048] Next, the push-up unit 24 is raised so that the upper end of the push-up unit 24 comes into contact with the base material 11 of the sheet 10 , thereby pushing up the fragments 3 of the semiconductor wafer via the sheet 10 .

[0049] Furthermore, if the push-up unit 24 has a function of irradiating energy for reducing the adhesive force of the adhesive layer 12, the energy may be irradiated at this time point from the push-up unit 24. Thus, the adhesive force of the adhesive layer 12 of the sheet 10 can be reduced in advance, so that it is not necessary to irradiate energy in the previous process, and the fragments 3 of the semiconductor wafer can be directly removed in one process.

[0050] As the push-up unit 24 rises, the sheet 10 extends, and the surface of the semiconductor wafer 1 opposite to the surface in contact with the adhesive layer 12 adheres to the tape 27 disposed above. At this time, since the adhesive force of the tape 27 is higher than that of the adhesive layer 12 after the adhesive force is reduced, the fragments 3 of the semiconductor wafer are peeled off from the adhesive layer 12 of the sheet 10 and adhered to the tape 27. By adhering the fragments 3 of the semiconductor wafer to the tape 27, they can be removed from the sheet 10, so that the fragments 3 of the semiconductor wafer do not adhere to the surface of the semiconductor device 2.

[0051] In addition, since the adhesiveness of the adhesive layer 12 of the sheet 10 is maintained, the semiconductor device 2 will not be peeled off by the tape 27. Furthermore, since the tape 27 does not contact the semiconductor device 2, the adhesive surface of the tape 27 will not adhere to the surface of the semiconductor device 2. Therefore, the semiconductor device 2 in the required area will not be peeled off from the adhesive layer 12 of the sheet 10. Then, when picking up the singulated semiconductor device 2, since the fragments 3 of the semiconductor wafer have been removed from the adhesive layer 12 of the sheet 10, it is possible to suppress the fragments 3 of the semiconductor wafer from scattering and adhering to the surface of the semiconductor device 2.

[0052] In addition, although the semiconductor device 2 is picked up from the sheet 10 after the semiconductor wafer fragments 3 are removed, energy for reducing the adhesive force may be irradiated to the area of ​​the sheet 10 to which the semiconductor device 2 is attached. By irradiating the energy, the adhesive force of the adhesive layer 12 of the sheet 10 can be reduced, making it easier to pick up the semiconductor device 2.

[0053] <Method for manufacturing semiconductor device>

[0054] Next, use Figure 7 The method for manufacturing the semiconductor device 2 is described with reference to the flowchart of FIG. Figure 7 This is a flowchart of the semiconductor manufacturing method involved in Embodiment 1.

[0055] like Figure 7 As shown, first, in step S1, a semiconductor wafer 1 is formed. Specifically, a single crystal ingot is sliced ​​to obtain a disk-shaped semiconductor wafer 1. Here, the semiconductor wafer 1 includes a silicon (silicon element) wafer, or a compound semiconductor wafer such as silicon carbide, gallium arsenide, gallium phosphide, or gallium nitride.

[0056] In step S2 , a plurality of circuits constituting the semiconductor device 2 are formed by performing known processes such as film formation, exposure, and etching.

[0057] In step S3 , the back surface of the semiconductor wafer 1 is attached to the adhesive layer 12 of the sheet 10 .

[0058] In step S4 , the semiconductor wafer 1 bonded to the sheet 10 is diced to separate the semiconductor wafer 1 into a plurality of semiconductor devices 2 and semiconductor wafer fragments 3 that do not function as semiconductor devices 2 .

[0059] In step S5, the adhesive force of the region of the adhesive layer 12 of the sheet 10 to which the fragments of semiconductor wafer 3 are attached is reduced. Specifically, the energy for reducing the adhesive force of the adhesive layer 12 is irradiated to the region of the sheet 10 to which the fragments of semiconductor wafer 3 present near the peripheral portion of the semiconductor wafer 1 are attached, thereby reducing the adhesive force of the adhesive layer 12 of the sheet 10. Here, the adhesive force of all the regions of the sheet 10 to which the fragments of semiconductor wafer 3 are attached need not be reduced.

[0060] In step S6, the fragments 3 of the semiconductor wafer after the adhesive force of the adhesive layer 12 of the sheet 10 is reduced are removed from the adhesive layer 12 of the sheet 10. Thus, when picking up the singulated semiconductor devices 2, it is possible to suppress the fragments 3 of the semiconductor wafer from scattering and adhering to the surface of the semiconductor device 2, thereby improving the yield of the semiconductor device 2.

[0061] In step S7, the adhesive force of the adhesive layer 12 of the sheet 10 is reduced by irradiating the region of the adhesive layer 12 of the sheet 10 to which the plurality of semiconductor devices 2 are attached again with energy for reducing the adhesive force of the adhesive layer 12. In addition, step S7 is a step performed to facilitate the picking up of the semiconductor device 2 from the adhesive layer 12 of the sheet 10 in the next step, i.e., step S8. If the semiconductor device 2 can be peeled off from the adhesive layer 12 of the sheet 10 without reducing the adhesive force, it can be omitted.

[0062] In step S8 , the individual semiconductor devices 2 are picked up from the adhesive layer 12 of the sheet 10 .

[0063] In step S9 , the picked-up semiconductor device 2 is fixed to the conductive pattern, and the semiconductor device 2 and the conductive pattern are electrically connected via a metal fine wire or the like.

[0064] In step S10 , packaging is performed so as to cover the semiconductor device 2 and the conductive pattern.

[0065] Here, between step S3 and step S4, or between step S8 and step S9, or both, the characteristics of the plurality of circuits formed on the surface of the semiconductor wafer 1 may be inspected using a probe or the like. Then, qualified products and defective products may be sorted so that the semiconductor device 2 having a defective circuit is not transferred to step S9.

[0066] <Effect>

[0067] As described above, in Embodiment 1, the semiconductor manufacturing apparatus comprises: a sheet holding portion that holds a sheet 10 having a substrate 11 and an adhesive layer 12, the adhesive layer 12 being provided on the surface of the substrate 11 and being bonded to a semiconductor wafer 1; and an adhesive force reducing portion that is configured to act on the sheet 10 held by the sheet holding portion so as to reduce the adhesive force of a predetermined region of the adhesive layer 12 of the sheet 10. The predetermined region of the adhesive layer 12 is a region where fragments 3 of semiconductor wafers that do not function as semiconductor devices 2 are bonded. Here, the adhesive force reducing portion is a scanning type energy irradiation device 32 that irradiates energy for reducing the adhesive force to the sheet 10 while scanning. The energy at this time is any one of light including ultraviolet rays, heating, cooling, or radiation. In addition, the sheet holding portion is a frame fixing unit 20 that fixes and supports the dicing frame 4 mounted on the peripheral portion of the semiconductor wafer 1.

[0068] Therefore, the semiconductor wafer fragments 3 can be removed before picking up the semiconductor devices 2 singulated from the semiconductor wafer 1. Thus, when picking up the semiconductor devices 2 singulated from the semiconductor wafer 1, it is possible to suppress the semiconductor wafer fragments 3 from scattering and adhering to the surface of the semiconductor device 2.

[0069] The frame fixing unit 20 holds the sheet 10 with the adhesive layer 12 facing downward, and the semiconductor manufacturing apparatus further includes a pressing unit 23 that contacts the substrate 11 and presses down the fragments 3 of the semiconductor wafer via the sheet 10 .

[0070] Therefore, the fragments 3 of the semiconductor wafer can be removed downward, so that the fragments 3 of the semiconductor wafer can be suppressed from being attached to the surface of the semiconductor device 2 .

[0071] Furthermore, since the semiconductor manufacturing apparatus further includes the rotating unit 40 for rotating the frame fixing unit 20 , the process of removing the semiconductor wafer fragments 3 downward can be easily performed by turning over the sheet 10 having the semiconductor wafer 1 attached to the surface.

[0072] In addition, the sheet holding part holds the sheet 10 in a manner that the substrate 11 is downward. The semiconductor manufacturing apparatus further comprises: a push-up unit 24 that abuts against the substrate 11 and pushes up the fragment 3 of the semiconductor wafer through the sheet 10; a camera 25 that identifies the fragment 3 of the semiconductor wafer; an air gun 26 that sprays gas toward the fragment 3 of the semiconductor wafer; and a control unit 41 that controls to spray gas from the air gun 26 to remove the fragment 3 of the semiconductor wafer from the adhesive layer 12 when the camera 25 identifies the fragment 3 of the semiconductor wafer peeled off from the adhesive layer 12 by the push-up unit 24.

[0073] Therefore, the fragments 3 of the semiconductor wafer can be blown off toward the outer peripheral side of the sheet 10 , and thus it is possible to suppress the fragments 3 of the semiconductor wafer from being attached to the surface of the semiconductor device 2 .

[0074] In addition, the semiconductor manufacturing device also has a tape removal unit 42, which peels off the tape 27 after sticking the tape 27 to the surface of the semiconductor chip 1 on the opposite side of the surface in contact with the adhesive layer 12. The tape 27 has a lower adhesive force than the adhesive layer 12 before the adhesive force is reduced and a higher adhesive force than the adhesive layer 12 after the adhesive force is reduced.

[0075] Therefore, the fragments 3 of the semiconductor wafer can be removed by being attached to the tape 27 , and therefore it is possible to suppress the fragments 3 of the semiconductor wafer from being attached to the surface of the semiconductor device 2 .

[0076] In addition, the semiconductor manufacturing device also has: a tape holding portion 43, which holds the tape 27 above the semiconductor chip 1 in a manner such that the adhesive surface of the tape 27 and the surface of the semiconductor chip 1 on the opposite side of the surface in contact with the adhesive layer 12 are opposite to each other, and the tape 27 has an adhesive force that is lower than the adhesive layer 12 before the adhesive force is reduced and higher than the adhesive layer 12 after the adhesive force is reduced; and a pushing unit 24, which abuts against the substrate 11 and pushes up the fragments 3 of the semiconductor chip through the sheet 10 to stick them to the adhesive surface of the tape 27.

[0077] Therefore, the fragments 3 of the semiconductor wafer can be removed by being attached to the tape 27 , and therefore it is possible to suppress the fragments 3 of the semiconductor wafer from being attached to the surface of the semiconductor device 2 .

[0078] <Implementation Method 2>

[0079] Next, a semiconductor manufacturing apparatus according to the second embodiment will be described. Figure 8 It is a side view showing a structure related to adhesive force reduction in a semiconductor manufacturing apparatus according to Embodiment 2. In Embodiment 2, the same components as those described in Embodiment 1 are denoted by the same reference numerals, and description thereof is omitted.

[0080] like Figure 2 As shown in the first embodiment, a scanning energy irradiation device 32 is arranged below the substrate 11 of the sheet 10. Figure 8 As shown, in Embodiment 2, the energy irradiation device 32 is not a scanning type, and a plurality of energy irradiation devices 32 are arranged on the outer peripheral side below the substrate 11 of the sheet 10. Furthermore, a mask 30 is arranged between the energy irradiation device 32 and the sheet 10, supported by a mask support portion 31. The mask 30 includes: an energy transmission portion 30a for transmitting energy irradiated from the energy irradiation device 32; and an energy interception portion 30b for intercepting energy irradiated from the energy irradiation device 32.

[0081] It is known that the fragments 3 of the semiconductor wafer are formed near the peripheral portion of the semiconductor wafer 1. Therefore, an energy transmitting portion 30a is provided on the outer peripheral portion of the mask 30 to irradiate energy to the area of ​​the sheet 10 attached to the peripheral portion of the semiconductor wafer 1, and an energy intercepting portion 30b is provided on the inner peripheral portion of the mask 30 to prevent energy from being irradiated to other areas.

[0082] Figure 8 The mask 30 is used to perform Figure 7 In the process of step S5, when the process of step S7 is performed, energy is irradiated using a mask 30 in which the positional relationship between the energy transmitting portion 30a and the energy intercepting portion 30b is reversed, or without a mask 30.

[0083] Here, the energy irradiated from the energy irradiation device 32, that is, the energy for reducing the adhesive force is any one of light including ultraviolet (UV), heating, cooling, or radiation.

[0084] In addition, since the structure related to the removal of the fragments 3 of the semiconductor wafer and the manufacturing method of the semiconductor device 2 are the same as those in the first embodiment, the description thereof will be omitted.

[0085] As described above, in embodiment 2, the adhesive force reducing portion comprises: an energy irradiation device 32, which irradiates energy for reducing adhesive force to the sheet 10; and a mask 30, which is arranged between the energy irradiation device 32 and the sheet 10, and the mask 30 includes an energy intercepting portion 30b for intercepting energy.

[0086] Therefore, without using the scanning type energy irradiation device 32, the adhesive force of the adhesive layer 12 can be selectively reduced only in the area of ​​the sheet 10 to which the semiconductor wafer fragments 3 are attached, and only the semiconductor wafer fragments 3 can be removed before picking up the semiconductor device. As a result, when picking up the singulated semiconductor device 2, it is possible to suppress the semiconductor wafer fragments 3 from scattering and adhering to the surface of the semiconductor device 2.

[0087] In addition, each embodiment can be freely combined, and each embodiment can be appropriately modified or omitted.

[0088] Hereinafter, various aspects of the present invention are summarized as appendices.

[0089] (Appendix 1)

[0090] A semiconductor manufacturing device for manufacturing a plurality of semiconductor devices obtained by singulating a semiconductor wafer, the semiconductor manufacturing device comprising:

[0091] a sheet holding portion that holds a sheet having a base material and an adhesive layer, the adhesive layer being provided on a first main surface of the base material and to which the semiconductor wafer is attached; and

[0092] an adhesive force reducing unit configured to act on the sheet held by the sheet holding unit to reduce the adhesive force of a predetermined region of the adhesive layer of the sheet,

[0093] The predetermined region of the adhesive layer is a region to which the fragment of the semiconductor wafer that does not function as the semiconductor device is adhered.

[0094] (Appendix 2)

[0095] The semiconductor manufacturing apparatus according to Appendix 1, wherein:

[0096] The adhesive force reducing unit is a scanning type energy irradiation device that irradiates energy for reducing adhesive force onto the sheet while scanning.

[0097] (Appendix 3)

[0098] The semiconductor manufacturing apparatus according to Appendix 1, wherein:

[0099] The adhesive force reducing unit comprises: an energy irradiation device that irradiates energy for reducing adhesive force to the sheet; and a mask that is arranged between the energy irradiation device and the sheet.

[0100] The mask includes an energy intercepting portion for intercepting the energy.

[0101] (Appendix 4)

[0102] The semiconductor manufacturing apparatus according to Appendix 2 or 3, wherein:

[0103] The energy is any of light including ultraviolet light, heating, cooling or radiation.

[0104] (Appendix 5)

[0105] A semiconductor manufacturing apparatus according to any one of Appendixes 1 to 4, wherein:

[0106] The sheet holding portion is a frame fixing unit that fixes and supports a dicing frame attached to the peripheral edge portion of the semiconductor wafer.

[0107] (Appendix 6)

[0108] A semiconductor manufacturing apparatus according to any one of Appendixes 1 to 5, wherein:

[0109] The sheet holding portion holds the sheet with the adhesive layer facing downward,

[0110] The semiconductor manufacturing apparatus further includes a pressing unit that comes into contact with the base material and presses down the fragments of the semiconductor wafer via the sheet.

[0111] (Appendix 7)

[0112] The semiconductor manufacturing apparatus according to Appendix 6, wherein:

[0113] The semiconductor manufacturing apparatus further includes a rotating unit that rotates the sheet holding unit.

[0114] (Appendix 8)

[0115] A semiconductor manufacturing apparatus according to any one of Appendixes 1 to 5, wherein:

[0116] The sheet holding portion holds the sheet with the substrate facing downward,

[0117] The semiconductor manufacturing apparatus further comprises:

[0118] a pushing unit abutting against the substrate to push up the fragments of the semiconductor wafer through the sheet;

[0119] a camera that identifies the fragments of the semiconductor wafer;

[0120] an air gun that sprays a gas toward the fragments of the semiconductor wafer; and

[0121] A control unit controls the air gun to eject the gas to remove the fragments of the semiconductor wafer from the adhesive layer when the camera recognizes the fragments of the semiconductor wafer peeled from the adhesive layer by the push-up unit.

[0122] (Appendix 9)

[0123] A semiconductor manufacturing apparatus according to any one of Appendixes 1 to 5, wherein:

[0124] The semiconductor manufacturing device also has a tape removal unit that peels off the tape after sticking the tape to the surface of the semiconductor chip opposite to the surface in contact with the adhesive layer. The tape has a lower adhesive force than the adhesive layer before the adhesive force is reduced and a higher adhesive force than the adhesive layer after the adhesive force is reduced.

[0125] (Appendix 10)

[0126] A semiconductor manufacturing apparatus according to any one of Appendixes 1 to 5, wherein:

[0127] The semiconductor manufacturing apparatus further comprises:

[0128] a tape holding portion for holding the tape above the semiconductor wafer in such a manner that the adhesive surface of the tape faces a surface of the semiconductor wafer opposite to the surface in contact with the adhesive layer, the tape having an adhesive force lower than that of the adhesive layer before the adhesive force is reduced and higher than that of the adhesive layer after the adhesive force is reduced; and

[0129] A push-up unit is in contact with the base material, pushes up the fragments of the semiconductor wafer through the sheet material, and adheres the fragments to the adhesive surface of the tape.

[0130] (Appendix 11)

[0131] A method for manufacturing a semiconductor device comprises the following steps:

[0132] affixing a semiconductor wafer to the adhesive layer of a sheet having a substrate and an adhesive layer, wherein the adhesive layer is provided on a first main surface of the substrate;

[0133] dicing the semiconductor wafer to separate it into a plurality of semiconductor devices and fragments of the semiconductor wafer that do not function as the semiconductor devices;

[0134] reducing the adhesive force of the adhesive layer in a region where the fragment of the semiconductor wafer is attached by the adhesive force reducing portion;

[0135] removing the fragments of the semiconductor wafer from the bonding layer; and

[0136] The plurality of semiconductor devices are picked up from the bonding layer.

[0137] (Appendix 12)

[0138] The method for manufacturing a semiconductor device according to Appendix 11, further comprising the following steps:

[0139] Between the step of removing the fragments of the semiconductor wafer from the adhesive layer and the step of picking up the plurality of semiconductor devices from the adhesive layer, the adhesive force of the region of the adhesive layer to which the plurality of semiconductor devices are attached is reduced by the adhesive force reducing portion.

[0140] Description of the label

[0141] 1 semiconductor wafer, 2 semiconductor device, 3 semiconductor wafer fragments, 4 cutting frame, 10 sheet, 11 substrate, 12 adhesive layer, 20 frame fixing unit, 23 pressing unit, 24 pushing unit, 25 camera, 26 air gun, 27 tape, 30 mask, 30b energy intercepting unit, 32 energy irradiation device, 40 rotating unit, 41 control unit, 42 tape disassembling unit, 43 tape holding unit.

Claims

1. A semiconductor manufacturing apparatus for manufacturing a plurality of semiconductor devices obtained by singulating a semiconductor wafer, the semiconductor manufacturing apparatus comprising: a sheet holding portion that holds a sheet having a base material and an adhesive layer, the adhesive layer being provided on a first main surface of the base material and to which the semiconductor wafer is attached; and an adhesive force reducing unit configured to act on the sheet held by the sheet holding unit to reduce the adhesive force of a predetermined region of the adhesive layer of the sheet, The predetermined region of the adhesive layer is a region to which the fragment of the semiconductor wafer that does not function as the semiconductor device is adhered.

2. The semiconductor manufacturing apparatus according to claim 1, wherein: The adhesive force reducing unit is a scanning type energy irradiation device that irradiates energy for reducing adhesive force onto the sheet while scanning.

3. The semiconductor manufacturing apparatus according to claim 1, wherein: The adhesive force reducing unit comprises: an energy irradiation device that irradiates energy for reducing adhesive force to the sheet; and a mask that is arranged between the energy irradiation device and the sheet. The mask includes an energy intercepting portion for intercepting the energy.

4. The semiconductor manufacturing apparatus according to claim 2 or 3, wherein: The energy is any of light including ultraviolet light, heating, cooling or radiation.

5. The semiconductor manufacturing apparatus according to any one of claims 1 to 4, wherein: The sheet holding portion is a frame fixing unit that fixes and supports a dicing frame attached to the peripheral edge portion of the semiconductor wafer.

6. The semiconductor manufacturing apparatus according to any one of claims 1 to 5, wherein: The sheet holding portion holds the sheet with the adhesive layer facing downward, The semiconductor manufacturing apparatus further includes a pressing unit that comes into contact with the base material and presses down the fragments of the semiconductor wafer via the sheet.

7. The semiconductor manufacturing apparatus according to claim 6, wherein: The semiconductor manufacturing apparatus further includes a rotating unit that rotates the sheet holding unit.

8. The semiconductor manufacturing apparatus according to any one of claims 1 to 5, wherein: The sheet holding portion holds the sheet with the substrate facing downward, The semiconductor manufacturing apparatus further comprises: a pushing unit abutting against the substrate to push up the fragments of the semiconductor wafer through the sheet; a camera that identifies the fragments of the semiconductor wafer; an air gun that sprays gas toward the fragments of the semiconductor wafer; as well as A control unit controls the air gun to eject the gas to remove the fragments of the semiconductor wafer from the adhesive layer when the camera recognizes the fragments of the semiconductor wafer peeled from the adhesive layer by the push-up unit.

9. The semiconductor manufacturing apparatus according to any one of claims 1 to 5, wherein: The semiconductor manufacturing device also has a tape removal unit that peels off the tape after sticking the tape to the surface of the semiconductor chip opposite to the surface in contact with the adhesive layer. The tape has a lower adhesive force than the adhesive layer before the adhesive force is reduced and a higher adhesive force than the adhesive layer after the adhesive force is reduced.

10. The semiconductor manufacturing apparatus according to any one of claims 1 to 5, wherein: The semiconductor manufacturing apparatus further comprises: an adhesive tape holding portion for holding the adhesive tape above the semiconductor wafer in such a manner that the adhesive surface of the adhesive tape faces a surface of the semiconductor wafer opposite to the surface in contact with the adhesive layer, the adhesive tape having an adhesive force lower than that of the adhesive layer before the adhesive force is reduced and higher than that of the adhesive layer after the adhesive force is reduced; as well as A push-up unit is in contact with the base material, pushes up the fragments of the semiconductor wafer through the sheet material, and adheres the fragments to the adhesive surface of the tape.

11. A method for manufacturing a semiconductor device, comprising the following steps: affixing a semiconductor wafer to the adhesive layer of a sheet having a substrate and an adhesive layer, wherein the adhesive layer is provided on a first main surface of the substrate; dicing the semiconductor wafer to separate it into a plurality of semiconductor devices and fragments of the semiconductor wafer that do not function as the semiconductor devices; reducing the adhesive force of the adhesive layer in a region where the fragment of the semiconductor wafer is attached by the adhesive force reducing portion; removing the fragments of the semiconductor wafer from the bonding layer; as well as The plurality of semiconductor devices are picked up from the bonding layer.

12. The method for manufacturing a semiconductor device according to claim 11, further comprising the following step: Between the step of removing the fragments of the semiconductor wafer from the adhesive layer and the step of picking up the plurality of semiconductor devices from the adhesive layer, the adhesive force of the region of the adhesive layer to which the plurality of semiconductor devices are attached is reduced by the adhesive force reducing portion.

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