Basic display driving circuit driven by conductive wire type memristor and preparation method of conductive wire type memristor

Abstract

The invention relates to a basic display driving circuit driven by a conductive wire type memristor and a preparation method of the conductive wire type memristor, and belongs to the technical field of devices and the field of display driving. In the basic display driving circuit, one end of a selected control module is connected to a data line, the control end is connected to a scanning line, and the other end is connected to the control end of the storage control module; one end of the storage control module is connected to a power line, the control end is connected to the selected control module, and the other end is connected to the light-emitting module; one end of the light-emitting module is connected to the storage control module, and the other end is connected to a ground wire; the selection control module and the storage control module both adopt conductive wire type memristors. According to the display driving circuit, the received data needing to be displayed can be stored in the circuit design, so that the effects of scanning and writing the display data and synchronously displaying the whole frame of picture are achieved; light emitting control can be realized through the memristor, and the application field of the memristor device is expanded.

Description

Technical Field

[0001] The present invention belongs to the field of device technology and display driving, and particularly relates to a basic display driving circuit driven by a conductive filament type memristor and a method for preparing the conductive filament type memristor. Background Art

[0002] At present, the rapidly developing information processing era requires more densely populated and intelligent microprocessors. Neuromorphic engineering is an effective way to solve the overall circuit architecture and establish ideal computing. The memory function and controllability of memristors are similar to the neuron synapses of biological organisms. While transmitting signals, they judge, process and memorize signals. As an important type of memristor, the application and development of conductive wire memristor devices are very important. At present, the application field research of neuron devices is mainly used in bionic devices, intelligent sensors, image processing and other fields. There are no reports on their application in the field of drive circuit display.

[0003] The traditional basic circuit of light-emitting diodes uses transistors to control light emission, while the most basic way to drive display circuits based on conductive filament memristors is as follows: Figure 2 As shown. The display area selects the control module according to the external scanning voltage applied to the memristor, and temporarily stores the external input data signal to the storage control module. After all the display data corresponding to all light-emitting diodes are stored, the external voltage source signal is turned on to complete the global display. The scanning drive compatible with the traditional display drive circuit utilizes the memory mechanism of the memristor and uses short pulse signals to scan and write display data, and then performs a unified global display. This can solve the problem of insufficient single-line display time for high-resolution display in the traditional liquid crystal display field and provide a new display idea. Summary of the invention

[0004] The purpose of the present invention is to provide a strategy for display driving using a conductive filament type memristor device, and therefore a basic display driving circuit driven by a conductive filament type memristor and a method for preparing a conductive filament type memristor are provided. The provided display driving circuit based on the memristor device can store the received data to be displayed in circuit design, thereby achieving the effect of scanning and writing display data and synchronously displaying the entire frame of the picture; secondly, the display driving circuit based on the memristor device can realize light emission control through the memristor, and it is applied to the display driving circuit, which expands the application field of the memristor device and improves the conventional display driving circuit.

[0005] To achieve the above object, the technical solution of the present invention is: a basic display driving circuit driven by a conductive filament type memristor, comprising a selection control module, a storage control module and a light emitting module; wherein,

[0006] Select a control module, one end of which is connected to the data line, the control end is connected to the scan line, and the other end is connected to the control end of the storage control module;

[0007] A storage control module, one end of which is connected to the power line, a control end of which is connected to the selected control module, and the other end of which is connected to the light emitting module;

[0008] A light emitting module, one end of which is connected to the storage control module, and the other end of which is connected to the ground wire;

[0009] The selection control module and the storage control module both use conductive wire memristors.

[0010] In an embodiment of the present invention, the light emitting module is composed of a light emitting device, and the light emitting device is a unidirectional conductive device.

[0011] In one embodiment of the present invention, the conductive filament type memristor is a sandwich structure, which includes, from bottom to top, a bottom metal electrode layer, a resistive layer, a control metal electrode layer, a resistive layer, and a top metal electrode layer; the bottom metal electrode layer, the control metal electrode layer, and the top metal electrode layer serve as one end, the control end, and the other end of the selected control module\storage control module, respectively.

[0012] In one embodiment of the present invention, the bottom metal electrode layer adopts an inert conductor material including highly doped silicon, gold, and platinum, the resistive layer adopts an insulating material through which metal ions can migrate including tantalum oxide and zirconium oxide, the control metal electrode layer adopts an active metal material including silver, copper, and indium oxide, and the top metal electrode layer adopts an inert conductor material including highly doped silicon, gold, and platinum.

[0013] In one embodiment of the present invention, the bottom metal electrode layer is a highly doped silicon wafer, the resistive layer is tantalum oxide, the control metal electrode layer is silver, and the top metal electrode layer is gold.

[0014] In one embodiment of the present invention, the resistive switching layer is prepared by dissolving a metal tantalum sheet in a mixed acid of nitric acid and hydrofluoric acid, extracting and purifying it, precipitating tantalum hydroxide with ammonia water, and then washing, drying, burning, and grinding it to obtain tantalum oxide as the resistive switching layer.

[0015] In one embodiment of the present invention, the conductive filament memristor has a resistance switching function that can be regulated by controlling the metal electrode layer, can be switched between a high resistance state and a low resistance state, and is applied to a display driving circuit.

[0016] In one embodiment of the present invention, the device selects a control module by adjusting a voltage pulse signal inputted by a scan line, latches data transmitted by a data line into a corresponding storage control module, and the corresponding light-emitting module emits light after a voltage is applied to a power line.

[0017] In one embodiment of the present invention, the circuit is implemented as follows:

[0018] Step S1, gating stage: controlling the formation of the conductive wire-type memristor resistance wire of the selected control module by applying a positive external voltage S, so that the selected control module is turned on, and the input data signal voltage D can be transmitted to the selected control module;

[0019] Step S2, storage stage: controlling the conductive wire type memristor resistor of the storage control module to disconnect by applying a negative external voltage D, so that the storage control module is initialized; controlling the conductive wire type memristor resistor of the storage control module to form by applying a positive external voltage D, so that the storage control module stores the converted data signal;

[0020] Step S3, gating and resetting stage: controlling the conductive wire type memristor resistance wire of the selected control module to be disconnected by applying a negative external voltage S, so that the selected control module is disconnected;

[0021] Step S4, light-emitting stage: by applying the power line voltage signal VDD, the light-emitting module emits light under the control of the storage control module.

[0022] The present invention also provides a method for preparing the conductive filament type memristor as described above, comprising the following steps:

[0023] (1) using an inert metal material including a highly doped silicon wafer, gold, or platinum as a substrate to obtain a bottom metal electrode layer;

[0024] (2) forming a solid dielectric layer, i.e., a first resistive switching layer, on the bottom metal electrode layer obtained in step (1) by a thin film process including sputtering and atomic layer deposition;

[0025] (3) forming a control metal electrode layer on the first resistive layer obtained in step (2) by a process including thermal evaporation and electron beam evaporation;

[0026] (4) forming a solid dielectric layer, i.e., a second resistive switching layer, on the control metal electrode layer obtained in step (3) by a thin film process including sputtering and atomic layer deposition;

[0027] (5) A top metal electrode layer is formed on the second resistive layer obtained in step (4) by processes including thermal evaporation and electron beam evaporation.

[0028] Compared with the prior art, the present invention has the following beneficial effects: the present invention is compatible with the scanning drive of the traditional display driving circuit, utilizes the memory mechanism of the memristor, uses short pulse signals to scan and write display data, and then performs a unified global display, which can solve the problem of insufficient single-line display time of high-resolution display in the traditional liquid crystal display field and provide a new display idea. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a schematic structural diagram of a conductive filament memristor device applied to a driving circuit display of the present invention;

[0030] Figure 2 A schematic diagram of the circuit structure and the driving voltage of the present invention;

[0031] Figure 3 The driving timing relationship of the conductive filament memristor device prepared in Example 1 when applied to a driving circuit;

[0032] In the figure: 100-bottom metal electrode layer, 110-resistive layer, 120-control metal electrode layer, 130-resistive layer, 140-top metal electrode layer, M1-selected control module, M2-storage control module, LED-light-emitting module, S-scanning signal voltage, D-data signal voltage, VDD-common power supply voltage, GND-common ground voltage. DETAILED DESCRIPTION

[0033] The technical solution of the present invention is described in detail below in conjunction with the accompanying drawings.

[0034] The present invention provides a basic display driving circuit driven by a conductive filament type memristor, comprising a selection control module, a storage control module and a light emitting module; wherein:

[0035] Select a control module, one end of which is connected to the data line, the control end is connected to the scan line, and the other end is connected to the control end of the storage control module;

[0036] A storage control module, one end of which is connected to the power line, a control end of which is connected to the selected control module, and the other end of which is connected to the light emitting module;

[0037] A light emitting module, one end of which is connected to the storage control module, and the other end of which is connected to the ground wire;

[0038] The selection control module and the storage control module both use conductive wire type memristors. The light emitting module is composed of light emitting devices, which are unidirectional conductive devices.

[0039] The present invention also provides a method for preparing the conductive filament type memristor as described above, comprising the following steps:

[0040] (1) using an inert metal material including a highly doped silicon wafer, gold, or platinum as a substrate to obtain a bottom metal electrode layer;

[0041] (2) forming a solid dielectric layer, i.e., a first resistive switching layer, on the bottom metal electrode layer obtained in step (1) by a thin film process including sputtering and atomic layer deposition;

[0042] (3) forming a control metal electrode layer on the first resistive layer obtained in step (2) by a process including thermal evaporation and electron beam evaporation;

[0043] (4) forming a solid dielectric layer, i.e., a second resistive switching layer, on the control metal electrode layer obtained in step (3) by a thin film process including sputtering and atomic layer deposition;

[0044] (5) A top metal electrode layer is formed on the second resistive layer obtained in step (4) by processes including thermal evaporation and electron beam evaporation.

[0045] The following is the specific implementation process of the present invention.

[0046] The conductive wire memristor structure of the present invention applied to the driving circuit display is as follows Figure 1 As shown, from bottom to top are a bottom metal electrode layer 100, a resistive layer 110, a control metal electrode layer 120, a resistive layer 130, and a top metal electrode layer 140. The bottom metal electrode layer 100 is a highly doped silicon wafer, which serves as both a substrate and a gate. The resistive layer 110 is tantalum oxide, the control metal electrode layer 120 is silver, the resistive layer 130 is tantalum oxide, and the top metal electrode layer 140 is gold.

[0047] The circuit structure of the present invention applied to display driving is as follows Figure 2 As shown, from left to right are the input data voltage D, the selected control module M1, the scan voltage S, the common power supply voltage VDD, the storage control module M2, the light-emitting module LED, and the common ground voltage GND. M1 / M2 are conductive wire-type memristors, and the light-emitting module LEDs are all unidirectional conductive devices, such as light-emitting diodes.

[0048] The present invention is further described below in conjunction with specific embodiments, but the present invention is not limited to these embodiments.

[0049] Example 1

[0050] 1) A heavily doped P-type silicon wafer with a size of 1.5 cm × 1.5 cm and a length of 100 nm of silicon dioxide was cleaned with acetone, isopropanol, chloroform, and distilled water (three times), and then dried with nitrogen to obtain a clean silicon wafer as a substrate.

[0051] 2) sputtering a tantalum oxide insulating layer with a thickness of 50-70 nm on the silicon wafer obtained in step 1) at a ratio of argon to oxygen of 20:5 and a sputtering pressure of 0.5 Pa.

[0052] 3) A 50 nm thick top silver electrode layer with a channel length of 30 μm and a width of 1000 μm is deposited on the silicon wafer obtained in step 2) by thermal evaporation using a dedicated mask.

[0053] 4) sputtering a tantalum oxide insulating layer with a thickness of 50-70 nm on the silicon wafer obtained in step 3) at a ratio of argon to oxygen of 20:5 and a sputtering pressure of 0.5 Pa.

[0054] 5) A 50 nm thick top silver electrode layer with a channel length of 30 μm and a width of 1000 μm is deposited on the silicon wafer obtained in step 4) by thermal evaporation using a dedicated mask.

[0055] 6) Select the control module M1 to connect the scan signal, the data signal and the storage control module M2, the storage control module M2 is respectively connected to the light-emitting module LED, and the control module M1 and the power input voltage VDD are selected to control the light-emitting module according to the input signal of the signal line.

[0056] 7) The scanning signal S applies a positive voltage pulse of about 5V, the M1 conductive filament is formed, and the selected control module is turned on.

[0057] 8) A negative voltage pulse of about -5V is applied to the data signal D, and the conductive wire M2 is disconnected and reset.

[0058] 9) A positive voltage pulse of about 5V is applied to the data signal D, the M2 conductive filament is formed, and the storage control module stores the data signal.

[0059] 10) The scanning signal S applies a negative voltage pulse of about -5V, the M1 conductive wire is disconnected, and the selected control module is reset.

[0060] 11) Apply 3V voltage to the power supply voltage VDD, and the light-emitting module LED lights up.

[0061] Figure 3 The driving timing relationship of the conductive filament memristor device prepared in Example 1 when applied to a driving circuit.

[0062] Example 2

[0063] A heavily doped P-type silicon wafer cut into a size of 1.5 cm × 1.5 cm was cleaned with acetone, isopropanol, chloroform, and distilled water (three times), and then dried with nitrogen to obtain a clean silicon dioxide wafer as a substrate.

[0064] A 50 nm thick platinum layer with a length of 500 μm and a width of 500 μm is sputtered on the silicon wafer obtained in step 1) using a special mask by magnetron sputtering as a bottom metal electrode layer.

[0065] 3) sputtering a tantalum oxide insulating layer with a thickness of 50-70 nm on the silicon wafer obtained in step 1) at a ratio of argon to oxygen of 20:5 and a sputtering pressure of 0.5 Pa.

[0066] 4) sputtering a tantalum oxide insulating layer with a thickness of 50-70 nm on the silicon wafer obtained in step 3) at a ratio of argon to oxygen of 20:5 and a sputtering pressure of 0.5 Pa.

[0067] 5) A 50 nm thick top copper electrode layer with a channel length of 30 μm and a width of 1000 μm is deposited on the silicon wafer obtained in step 4) by thermal evaporation using a dedicated mask.

[0068] 6) Select the control module M1 to connect the scan signal, data signal and storage control module M2, the storage control module M2 is respectively connected to the light-emitting module LED, and select the control module M1 and the power input voltage VDD to control the light-emitting module according to the input signal of the signal line.

[0069] 7) The scanning signal S applies a positive voltage pulse of about 5V, the M1 conductive filament is formed, and the selected control module is turned on.

[0070] 8) A negative voltage pulse of about -5V is applied to the data signal D, and the conductive wire M2 is disconnected and reset.

[0071] 9) A positive voltage pulse of about 5V is applied to the data signal D, the M2 conductive filament is formed, and the storage control module stores the data signal.

[0072] 10) The scanning signal S applies a negative voltage pulse of about -5V, the M1 conductive wire is disconnected, and the selected control module is reset.

[0073] 11) Apply 3V voltage to the power supply voltage VDD, and the light-emitting module LED lights up.

[0074] The above embodiments are preferred implementation modes of the present invention, but the implementation modes of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the present invention should be equivalent replacement methods and are included in the protection scope of the present invention.

Claims

1. A basic display driving circuit driven by a conductive filament type memristor, characterized in that: It includes a selection control module, a storage control module and a light emitting module; wherein, Select a control module, one end of which is connected to the data line, the control end is connected to the scan line, and the other end is connected to the control end of the storage control module; A storage control module, one end of which is connected to the power line, a control end of which is connected to the selected control module, and the other end of which is connected to the light emitting module; A light emitting module, one end of which is connected to the storage control module, and the other end of which is connected to the ground wire; The selection control module and the storage control module both use conductive wire memristors.

2. A basic display driving circuit driven by a conductive filament type memristor according to claim 1, characterized in that: The light emitting module is composed of light emitting devices, and the light emitting devices are unidirectional conductive devices.

3. The basic display driving circuit driven by a conductive filament type memristor according to claim 1, characterized in that: The conductive filament type memristor is a sandwich structure, which includes, from bottom to top, a bottom metal electrode layer, a resistive switching layer, a control metal electrode layer, a resistive switching layer, and a top metal electrode layer; the bottom metal electrode layer, the control metal electrode layer, and the top metal electrode layer serve as one end, the control end, and the other end of the selected control module\storage control module, respectively.

4. A basic display driving circuit driven by a conductive filament type memristor according to claim 3, characterized in that: The bottom metal electrode layer is made of an inert conductor material including highly doped silicon, gold, and platinum, the resistive layer is made of an insulating material through which metal ions can migrate including tantalum oxide and zirconium oxide, the control metal electrode layer is made of an active metal material including silver, copper, and indium oxide, and the top metal electrode layer is made of an inert conductor material including highly doped silicon, gold, and platinum.

5. A basic display driving circuit driven by a conductive filament type memristor according to claim 3 or 4, characterized in that: The bottom metal electrode layer is a highly doped silicon wafer, the resistive switching layer is tantalum oxide, the control metal electrode layer is silver, and the top metal electrode layer is gold.

6. A basic display driving circuit driven by a conductive filament type memristor according to claim 5, characterized in that: The resistive switching layer is prepared by dissolving a metal tantalum sheet in a mixed acid of nitric acid and hydrofluoric acid, extracting and purifying it, precipitating tantalum hydroxide with ammonia water, and then washing, drying, burning and grinding it to obtain tantalum oxide as the resistive switching layer.

7. The basic display driving circuit driven by a conductive filament type memristor according to claim 3, characterized in that: The conductive filament type memristor has a resistance switching function that can be regulated by a controlled metal electrode layer, can be switched between a high resistance state and a low resistance state, and is applied to a display driving circuit.

8. The basic display driving circuit driven by a conductive filament type memristor according to claim 1, characterized in that: The device selects the control module by adjusting the voltage pulse signal input by the scanning line, latches the data transmitted by the data line into the corresponding storage control module, and the corresponding light-emitting module emits light after the voltage is applied to the power line.

9. The basic display driving circuit driven by a conductive filament type memristor according to claim 1, characterized in that: The circuit is implemented as follows: Step S1, gating stage: controlling the formation of the conductive wire-type memristor resistance wire of the selected control module by applying a positive external voltage S, so that the selected control module is turned on, and the input data signal voltage D can be transmitted to the selected control module; Step S2, storage stage: controlling the conductive wire type memristor resistor of the storage control module to disconnect by applying a negative external voltage D, so that the storage control module is initialized; controlling the conductive wire type memristor resistor of the storage control module to form by applying a positive external voltage D, so that the storage control module stores the converted data signal; Step S3, gating and resetting stage: controlling the conductive wire type memristor resistance wire of the selected control module to be disconnected by applying a negative external voltage S, so that the selected control module is disconnected; Step S4, light-emitting stage: by applying the power line voltage signal VDD, the light-emitting module emits light under the control of the storage control module.

10. A method for preparing a conductive filament memristor according to any one of claims 3 to 7, characterized in that: The following steps are involved: (1) using an inert metal material including a highly doped silicon wafer, gold, or platinum as a substrate to obtain a bottom metal electrode layer; (2) forming a solid dielectric layer, i.e., a first resistive switching layer, on the bottom metal electrode layer obtained in step (1) by a thin film process including sputtering and atomic layer deposition; (3) forming a control metal electrode layer on the first resistive layer obtained in step (2) by a process including thermal evaporation and electron beam evaporation; (4) forming a solid dielectric layer, i.e., a second resistive switching layer, on the control metal electrode layer obtained in step (3) by a thin film process including sputtering and atomic layer deposition; (5) A top metal electrode layer is formed on the second resistive layer obtained in step (4) by processes including thermal evaporation and electron beam evaporation.

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