Accelerated aging and quality inspection methods for chips

Abstract

The present invention provides a method for accelerated aging and quality detection of a chip, wherein the accelerated aging method comprises the following steps: S1: using a first ultrasonic wave to clean the chip to be aged; S2: using a second ultrasonic wave with a preset pressure to apply pressure to the chip at a preset temperature to promote the aging of the chip. The present invention conducts a damage experiment on the chip by using the pressure of the ultrasonic wave, which can effectively damage the external structure of the chip and the internal components, thereby achieving the purpose of accelerating the aging of the chip and improving the efficiency of the chip quality detection experiment.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor testing technology, and more specifically, to a chip accelerated aging and quality detection method. Background Art

[0002] Currently, in the field of DRAM semiconductor chip testing, it is necessary to accelerate chip aging and then conduct chip quality testing to test and screen better quality chips.

[0003] Here are some common ways that chips age faster:

[0004] 1. High Temperature Storage (HTS): Store the wafer in a high temperature environment for a certain period of time to accelerate the aging of materials and contacts. This method is mainly used to evaluate the impact of temperature on device stability.

[0005] 2. High Temperature Operating Life (HTOL): Running the chip at high temperature and rated operating conditions, usually for hundreds to thousands of hours. This method can discover electromigration, charge trapping and other failure mechanisms at high temperatures.

[0006] 3. Temperature Cycling: Expose the wafer to a rapidly changing temperature environment, usually cycling from low to high temperatures. This method can detect mechanical stress and solder joint failure caused by thermal expansion and contraction.

[0007] 4. Highly Accelerated Life Testing (HALT): Uses higher stress levels, including extreme temperatures, rapid temperature changes, high humidity, vibration, etc. to quickly discover potential failure modes.

[0008] 5. High Humidity Storage (HHS): Store chips in a high humidity environment to accelerate the occurrence of failure mechanisms such as water vapor intrusion and electrochemical corrosion.

[0009] 6. Bias Temperature Humidity Test (BTH): While applying bias, the chip is placed in a high temperature and high humidity environment to accelerate the occurrence of failure modes such as leakage and corrosion.

[0010] These methods usually select appropriate acceleration factors and test conditions according to the actual usage conditions and failure modes, so as to simulate the actual usage environment for a long time in a short time.

[0011] However, the above methods not only take a long time to test, but also accelerate aging by affecting the appearance of the chip through changes in the external environment. They lack an impact on the inside of the chip and have limited damage to the chip, so that the test results cannot fully reflect the quality of the chip. The above methods are not accurate enough in detecting the chip. Summary of the invention

[0012] In view of the above problems, the purpose of the present invention is to provide a method for accelerated aging and quality inspection of a chip. By conducting a damage experiment on the chip through ultrasonic pressure, the external structure of the chip and the internal components can be effectively damaged, thereby achieving the purpose of accelerating chip aging and improving the efficiency of the chip quality inspection experiment.

[0013] The present invention provides a method for accelerating chip aging, comprising the following steps:

[0014] S1: using the first ultrasonic wave to clean the aged chip;

[0015] S2: At a preset temperature, a second ultrasonic wave with a preset pressure is used to apply pressure to the chip to promote aging of the chip.

[0016] The frequency of the first ultrasonic wave is less than 20KHz, the frequency of the second ultrasonic wave of the preset pressure is greater than 20KHz, and the power density is 0.1W / CM 2 -3W / CM 2 .

[0017] The preset pressure includes at least 3 pressure levels, and the pressure applied by the second ultrasonic wave at the first pressure level, the second pressure level, and the third pressure level gradually increases; the preset temperature includes 25°C±5°C, or above 30°C, or a temperature cycle that complies with the JEDEC standard, or a changing temperature.

[0018] In the step S2, applying pressure to the chip using a second ultrasonic wave of a preset pressure includes:

[0019] The second ultrasonic wave of the first pressure level, the second pressure level, or the third pressure level is used to apply pressure to the chip; or the second ultrasonic wave of the first pressure level, the second pressure level, and the third pressure level are used in sequence to gradually apply pressure to the chip; the energy of the second ultrasonic wave is concentrated to form a focus to irradiate each position point of the chip.

[0020] Before the step S2, the chip is divided into different areas; in the step S2, a second ultrasonic wave with a preset pressure is used to apply pressure to the chip, including: each area uses an ultrasonic wave with a different pressure level to apply pressure.

[0021] Dividing the chip into different areas includes: dividing the capacitor array part of the chip into capacitor areas, and dividing the peripheral circuit part of the chip into circuit areas.

[0022] Another aspect of the present invention provides a chip quality detection method, which uses the above-mentioned accelerated chip aging method to promote the aging of the chip to be tested, comprising the following steps:

[0023] s1: Check the chip to be tested and record any defects;

[0024] s2: using the first ultrasonic wave to clean the chip;

[0025] s3: applying pressure to the chip using a second ultrasonic wave of the preset pressure at the preset temperature to promote aging of the chip;

[0026] s4: Inspect the chip to determine the quality level of the chip.

[0027] When the preset temperature is 25°C ± 5°C, or above 30°C, or follows the temperature cycle of the JEDEC standard,

[0028] In the step s1, detecting the chip to be tested includes: detecting the chip at a temperature of 25°C±5°C or under a temperature cycle following the JEDEC standard, and recording existing defects of the chip;

[0029] In the step s2, the chip is cleaned by using the first ultrasonic wave, including: at a temperature of 25°C±5°C or under a temperature cycle in accordance with the JEDEC standard, the energy of the first ultrasonic wave is concentrated to form a focus, and the first ultrasonic wave is moved to scan each position point of the chip, and after cleaning the chip, the chip is inspected and secondary defects are recorded;

[0030] In the step s3, applying pressure to the chip using the second ultrasonic wave of the preset pressure includes: applying pressure to the chip using the second ultrasonic wave of at least one pressure level of the at least three pressure levels; or gradually applying pressure to the chip using the second ultrasonic wave of each pressure level of the at least three pressure levels in sequence;

[0031] In the step s4, the chip is inspected to determine the quality grade of the chip, including: inspecting the chip at a temperature of 25°C±5°C or under a temperature cycle following the JEDEC standard, and dividing the quality grade of the chip according to the pressure level of the second ultrasonic wave applied and the degree of damage to the chip.

[0032] When the preset temperature is a variable temperature,

[0033] In the step s1, detecting the chip to be tested includes: detecting the chip at a temperature below 25° C. and recording existing defects of the chip;

[0034] In the step s2, the chip is cleaned by using the first ultrasonic wave, including: at a temperature below 25° C., the energy of the first ultrasonic wave is concentrated to form a focus, and the first ultrasonic wave is moved to scan each position point of the chip, and after cleaning the chip, the chip is inspected, and the post-cleaning defects of the chip are recorded;

[0035] In the step s3, applying pressure to the chip using a second ultrasonic wave of a preset pressure includes:

[0036] s31: at a first preset temperature, the energy of the second ultrasonic wave is concentrated to form a focus, and moved to irradiate each position point of the chip, and then the chip is voltage-biased;

[0037] s32: at a second preset temperature, the energy of the second ultrasonic wave is concentrated to form a focus, and moved to irradiate each position point of the chip, and then the chip is voltage-biased;

[0038] s33: at a third preset temperature, the energy of the second ultrasonic wave is concentrated to form a focus, and moved to irradiate each position point of the chip, and then the chip is voltage-biased;

[0039] Wherein, the first preset temperature and the third preset temperature are both lower than the second preset temperature, and the second preset temperature is higher than 35°C;

[0040] In the step s4, the chip is inspected to determine the quality grade of the chip, including: inspecting the chip at a temperature of 25°C±5°C, and classifying the quality grade of the chip according to the pressure level of the applied second ultrasonic wave and the degree of damage to the chip.

[0041] In the step s31, the step s32 and the step s33, a second ultrasonic wave of at least one of the at least three pressure levels is used to apply pressure to the chip; or in the step s31, the step s32 and the step s33, a second ultrasonic wave of each of the at least three pressure levels is used in sequence to gradually apply pressure to the chip.

[0042] The accelerated aging and quality detection method of the chip according to the present invention utilizes the characteristics of ultrasound to apply pressure to the chip at a set temperature through ultrasound with a preset pressure, thereby accelerating the damage to the chip's external connection structure and internal electronic structure. The present invention can effectively improve the efficiency of chip aging experiments, and can effectively affect the characteristics of each area of ​​the chip, such as mechanical stress, thermal effect, resonance effect, and electromagnetic interference. The damage is deep and covers a wide area, which is conducive to testing and screening out truly good parts, and greatly improves the accuracy and efficiency of chip testing experiments.

[0043] In order to achieve the above and related purposes, one or more aspects of the present invention include features that will be described in detail later and are particularly pointed out in the claims. The following description and the accompanying drawings describe some exemplary aspects of the present invention in detail. However, these aspects indicate only some of the various ways in which the principles of the present invention can be used. In addition, the present invention is intended to include all of these aspects and their equivalents. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] By referring to the following description in conjunction with the accompanying drawings, and with a more comprehensive understanding of the present invention, other objects and results of the present invention will become more apparent and easy to understand. In the accompanying drawings:

[0045] Figure 1 This is a flow chart of the accelerated aging method of a chip according to Embodiment 1 of the present invention;

[0046] Figure 2 A schematic diagram of chip area division according to Embodiment 1 of the present invention;

[0047] Figure 3 is a flow chart of a chip quality detection method according to Embodiment 2 of the present invention;

[0048] Among them, 1-capacitor area, 2-circuit area;

[0049] The same reference numerals throughout the drawings indicate similar or corresponding features or functions. DETAILED DESCRIPTION

[0050] In the following description, for the purpose of illustration, in order to provide a comprehensive understanding of one or more embodiments, many specific details are set forth. However, it is apparent that these embodiments may also be implemented without these specific details. In other examples, for ease of describing one or more embodiments, known structures and devices are shown in the form of block diagrams.

[0051] The present invention can be subjected to various changes and can have various embodiments, and specific embodiments are illustrated and described in the accompanying drawings. However, the present invention is not limited to the specific implementation, and all changes, equivalents and substitutes falling within the concept and technical scope of the present invention are included, and should be understood to be included.

[0052] Ordinal terms such as first, second, etc. may be used to describe various constituent elements, but the constituent elements are not limited to the terms. The terms are only used to distinguish one constituent element from another constituent element. For example, without departing from the scope of the claims of the present invention, the second constituent element may be named as the first constituent element, and similarly, the first constituent element may be named as the second constituent element. The terms and / or include a combination of multiple associated items or a certain item among multiple associated items.

[0053] It should be understood that when a certain component is mentioned to be "connected" or "contacted" with other components, this includes not only the case where it is directly connected or contacted with other components, but also the case where other components exist in between. Conversely, when a certain component is mentioned to be "directly connected" or "directly contacted" with other components, it should be understood that there are no other components in between.

[0054] In the description of the embodiments, when it is described that a certain component is formed "on or under" another component, on or under includes two components directly contacting each other or at least one other component is arranged and formed between the two components. Moreover, when it is expressed as on or under, it refers to not only the upper direction but also the lower direction based on a certain component.

[0055] The terms used in this application are only used to illustrate specific embodiments and are not intended to limit the present invention. Unless the context clearly provides otherwise, singular expressions include plural expressions. In this application, it should be understood that terms such as "including" or "having" are used to specify the presence of features, numbers, steps, operations, constituent elements, parts or combinations thereof recorded in the specification, and do not preclude the presence or additional possibility of one or more other features, numbers, steps, operations, constituent elements, parts or combinations thereof.

[0056] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as those generally understood by those skilled in the art. Terms defined in commonly used dictionaries should be interpreted as having the same meaning as in the context of the relevant technology, and if not clearly defined in this application, should not be interpreted as an ideal or overly formal meaning.

[0057] Glossary

[0058] JEDEC Standards: JEDEC is an international standards organization for the electronic components and devices industry. Its standards specify the methods and requirements for wafer temperature cycling tests. Temperature cycling tests are designed to evaluate the stability and reliability of chips in a temperature-changing environment. This test simulates the thermal stress and material fatigue caused by temperature changes in actual use. In temperature cycling tests, chips are exposed to cycles between different temperatures.

[0059] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0060] Example 1

[0061] Figure 1 This is a flow chart of the accelerated aging method of a chip according to Embodiment 1 of the present invention;

[0062] like Figure 1 As shown, the accelerated chip aging method proposed in this embodiment can be used for aging damage experiments of DRAM chips, and can also be used for aging damage experiments of semiconductor components such as diodes.

[0063] The accelerated aging method of the chip proposed in this embodiment includes the following steps:

[0064] S1: Clean the aged chip using the first ultrasonic wave.

[0065] If the chip to be tested is a used chip, it is necessary to clean the oil stains on the chip. This embodiment uses the characteristics that ultrasonic energy is greater than that of ordinary sound waves, and ultrasonic waves are widely used in the fields of medicine, food processing, cleaning, etc., and ultrasonic cleaning is used. According to the experimental needs, the frequency, temperature and other indicators of the first ultrasonic wave are set to clean the chip thoroughly.

[0066] In this embodiment, the frequency of the first ultrasonic wave can be set to be less than 20KHz, and the propagation medium is a non-conductive liquid, such as silicone oil. Silicone oil has stable performance, a boiling point generally between 150°C and 300°C, a freezing temperature generally below -50°C, and a thermal conductivity generally between (0.1-0.2) W / (m·K). The thermal conductivity of air is only about 0.025 W / (m·K). The pressure of the first ultrasonic wave will not be too large, which is suitable for cleaning chips. In addition, the propagation medium can also be other media available for ultrasonic propagation, such as gas or other liquids.

[0067] After cleaning the chip to be tested and before performing the stress test, the chip can be quality inspected to understand whether the chip has defects and the defect conditions, so as to compare with the chip after the stress test.

[0068] S2: At a preset temperature, a second ultrasonic wave with a preset pressure is used to apply pressure to the chip to promote chip aging.

[0069] Ultrasonic energy is greater than that of ordinary sound waves. Ultrasonic waves are widely used in medicine, food processing, cleaning and other fields. However, excessive ultrasonic pressure will produce some negative effects. For example, when ultrasonic waves are irradiated on the human body or objects, excessive pressure may cause distortion or damage. This embodiment uses the characteristics of ultrasonic waves to damage the chip and accelerate the aging of the chip to determine the quality of the chip.

[0070] The pressure of ultrasound is related to its frequency, power density, propagation medium and exposure time. In a certain propagation medium, the greater the frequency and power density, the longer the exposure time, and the greater the ultrasound pressure. This embodiment uses this characteristic of ultrasound to select various indicators of the second ultrasound to reach the required pressure, thereby accelerating the aging damage of the chip.

[0071] In this embodiment, the preset temperature may include 25°C ± 5°C, or above 30°C, or a temperature cycle following the JEDEC standard, or a variable temperature. The frequency of the second ultrasonic wave of the preset pressure is greater than 20KHz, and the power density is 0.1W / CM 2 -3W / CM 2 , the exposure time is greater than 30S, and the propagation medium can be a non-conductive liquid at -40~125℃, such as silicone oil. Silicone oil has stable performance, a boiling point generally between 150℃ and 300℃, a freezing temperature generally below -50℃, and a thermal conductivity generally between (0.1-0.2) W / (m·K). The thermal conductivity of air is only about 0.025 W / (m·K). The propagation medium can also be other media available for ultrasonic propagation, such as gas or other liquids.

[0072] When the preset temperature is about room temperature 25°C, according to the specific requirements of the experiment and the situation of the chip, the data within the range of various indicators of the second ultrasonic wave with preset pressure can be selected to form a second ultrasonic wave with a certain pressure, and irradiate each position point of the chip in turn, so as to cause rapid and powerful pressure damage to the chip.

[0073] When the preset temperature is a high temperature greater than 30°C, the data within the range of various indicators of the second ultrasonic wave with a preset pressure can be selected according to the specific requirements of the experiment and the situation of the chip to form a second ultrasonic wave with a certain pressure, and irradiate each position point of the chip in turn to cause rapid and powerful pressure damage to the chip.

[0074] According to the experimental needs, the preset temperature can also adopt a temperature cycle that complies with the JEDEC standard. According to the specific requirements of the experiment and the situation of the chip, the data within the range of various indicators of the second ultrasonic wave with a preset pressure is selected to form a second ultrasonic wave with a certain pressure, and each position point of the chip is irradiated in turn, so as to cause rapid and powerful pressure damage to the chip.

[0075] According to the needs of the experiment, the preset temperature can also be low temperature. According to the specific requirements of the experiment and the situation of the chip, the data within the range of various indicators of the second ultrasonic wave with a preset pressure is selected to form a second ultrasonic wave with a certain pressure, and each position point of the chip is irradiated in turn to cause rapid and powerful pressure damage to the chip.

[0076] According to the experimental needs, the preset temperature can also adopt a variable temperature. According to the specific requirements of the experiment and the situation of the chip, the data within the range of various indicators of the second ultrasonic wave with a preset pressure is selected to form a second ultrasonic wave with a certain pressure, and each position point of the chip is irradiated in turn to cause rapid and powerful pressure damage to the chip.

[0077] According to the specific conditions of the experiment, select the appropriate preset temperature and the appropriate preset pressure value to achieve the required pressure value, so as to accelerate the aging of the chip. If it is an old chip, it can accelerate the damage of the original tiny cracks and achieve the purpose of accelerated aging.

[0078] Under the same preset pressure, the second ultrasonic wave exerts stronger pressure in a high temperature environment than in a low temperature environment, which can cause the chip to age faster.

[0079] Due to different preset pressures, the pressure damage to the chip is different. In this embodiment, in order to observe the damage degree of the chip under different pressures and obtain the quality level of the chip, the preset pressure may include at least three pressure levels, and the pressure applied by the second ultrasonic wave at the first pressure level, the second pressure level, and the third pressure level gradually increases.

[0080] According to the specific conditions of the experiment, a second ultrasonic wave with a suitable preset temperature and a suitable pressure level can be selected to perform a pressure test on several chips, so as to compare the quality of each chip, confirm the quality of the chip and grade the quality.

[0081] In this embodiment, the three pressure levels are divided into: the frequency of the second ultrasonic wave of the first pressure level is 20KHz-100KHz, the power density is 0.1W / CM 2 -3W / CM 2 , the exposure time is greater than 30S; the frequency of the second ultrasonic wave of the second pressure level is 100KHz-1MHz, and the power density is 0.1W / CM 2 -3W / CM 2, the exposure time is greater than 30S; the frequency of the second ultrasonic wave of the third pressure level is not less than 1MHz, and the power density is 0.1W / CM 2 -3W / CM 2 , the exposure time is greater than 30S. There are also multiple pressure levels, and the frequency, power density and exposure time can be selected according to the experimental needs.

[0082] As the frequency, power density, and exposure time increase, the chip temperature will rise slightly and the aging rate will accelerate.

[0083] The second ultrasonic wave of the first pressure level can produce mechanical stress on the more fragile chip components, causing damage to them. The second ultrasonic wave of the second pressure level can loosen or break the solder joints and internal structures of chip components. The second ultrasonic wave of the third pressure level is more likely to cause local thermal effects, which can damage the chip, the inside of microelectronic components and packaging materials. As the pressure level gradually increases, the damage to the chip gradually deepens from the outside to the inside.

[0084] In a specific embodiment of the present invention, the second ultrasonic wave of the first pressure level, the second pressure level, or the third pressure level may be used to apply pressure to the chip.

[0085] According to the experimental requirements and chip conditions, a second ultrasonic wave with a pressure level is selected to pressurize each position point of the chip in turn. With the appropriate preset temperature, during the experiment, the quality damage of different chips under the same pressure can be grasped to judge the quality level of different chips.

[0086] If the chips are of the same type, the second ultrasonic wave of each pressure level can be used to pressurize them separately, so as to master the damage results of different pressures, and master the chip's anti-damage ability and quality level. If the chips are of different types, the second ultrasonic wave of the same pressure level can be used to pressurize them, so as to master the quality levels of different types of chips and select the better chip types.

[0087] In a specific embodiment of the present invention, second ultrasonic waves of a first pressure level, a second pressure level, and a third pressure level are sequentially used to gradually apply pressure to the chip.

[0088] At the preset temperature, the pressure on the chip is gradually increased, which can gradually cause damage to the chip. The degree of damage to the chip at each pressure level is observed and tested, and at which pressure level the chip will be severely damaged, the relationship between the degree of chip damage and pressure can be mastered, and the quality of the chip can be fully understood.

[0089] A voltage bias can also be performed after the second ultrasonic wave applies pressure to electrically pressurize the chip, further accelerating the aging of the chip. The voltage and other index values ​​of the voltage bias are set according to specific circumstances.

[0090] Voltage pull-off refers to testing components by applying a voltage higher or lower than the standard power supply voltage. When performing a power pull-off test, the components usually need to experience a momentary change in power supply voltage to test their performance. In order to accelerate the damage to the internal circuit of the chip, the chip is also powered on and pressurized by an external power supply, and the internal circuit structure is affected by a voltage exceeding / lower than the rated value.

[0091] In a specific embodiment of the present invention, before step S2, the method further includes dividing the chip into different areas.

[0092] In order to accelerate the aging of different parts of the chip in a targeted manner, the chip can be divided into several areas according to its own structure.

[0093] Taking advantage of the fact that ultrasound can apply pressure in a very small range, the second ultrasonic pressure can be applied area by area. The pressure applied to each area can be determined according to the specific structural characteristics, so as to test the quality of each area in a targeted manner.

[0094] The structure of each area of ​​the chip is different. In order to test each area in a targeted manner, in step S2, a second ultrasonic wave with a preset pressure is used to apply pressure to the chip, and the step also includes: each area uses a second ultrasonic wave with a different pressure level to apply pressure. According to the structural characteristics of the area, the pressure level of the second ultrasonic wave selected for each area is different, and targeted pressure is applied, which is more conducive to testing the quality of each area of ​​the chip.

[0095] like Figure 2 As shown, in a specific embodiment of the present invention, the area where the capacitor array part of the chip is located is divided into a capacitor area 1, and the area where the peripheral circuit part of the chip is located is divided into a circuit area 2.

[0096] The capacitor array part of the chip is made of dielectric material, and the peripheral circuit part is made of metal conductive material. It is divided into two areas according to the conductivity of the chip. Each area has different structural characteristics and can withstand different maximum pressures.

[0097] Applying different pressures according to the structural characteristics of each area is more conducive to testing the quality of each area of ​​the chip.

[0098] When this method is used to detect other semiconductor components, it can also be divided into several areas, and different second ultrasonic pressures are applied to each area in a targeted manner.

[0099] By utilizing the characteristic of focused ultrasound that can apply pressure in a very small range, the pressure of the second ultrasound can be applied to each area one by one. The pressure applied to each area can be determined according to the specific situation, and the quality of each area can be tested in a targeted manner. Pressure can be applied to each area separately according to the situation, and the pressure applied can be the same, or different pressures can be applied according to the structural characteristics of the area.

[0100] In a specific embodiment of the present invention, in order to accurately irradiate each area and form stronger pressure, the aging speed is faster, the energy of the second ultrasonic wave is concentrated to form a focus, and irradiate each position point of the chip. The focused second ultrasonic wave irradiates the chip, which can increase the temperature inside the chip, make the pressure damage stronger, and increase the aging efficiency. The focused second ultrasonic wave moves dynamically, irradiates each position point of the chip in turn, and applies pressure to each position point.

[0101] Apply the same pressure to every point in the same area. Apply pressure precisely to each area.

[0102] The focusing of ultrasound waves can be precisely controlled by using lenses or phased array methods.

[0103] After step S2, the chip is quality tested to determine the degree of damage to the chip and to determine the quality of the chip.

[0104] After the pressure is applied, the chip is inspected at a room temperature of 25℃±5℃ or a required temperature, and the quality level of the chip is divided according to the pressure level of the second ultrasonic wave, the degree of damage to the chip, and the defects before the damage test. The damage of each pressure level can be set as a quality level, and within each pressure level, it can be divided into several quality levels according to the degree of damage.

[0105] If the chips are different, the second ultrasonic wave with the same pressure level can be applied to all of them, and the quality level of each chip can be finally determined. If the chips are from the same batch, the second ultrasonic wave with different pressure levels can be applied to finally determine the degree of damage of the chip at each level and the quality level of this batch of chips. The appropriate quality inspection temperature can be selected according to the specific conditions of the experiment.

[0106] This method accelerates the damage to the chip's external connection structure and internal electronic structure. The damage is deep and covers a wide area, which improves the efficiency of the chip aging experiment, is conducive to testing and screening out truly good parts, and greatly improves the accuracy and efficiency of the chip testing experiment.

[0107] Example 2

[0108] Figure 3 is a flow chart of a chip quality detection method according to Embodiment 2 of the present invention;

[0109] like Figure 3As shown, the chip quality detection method provided in this embodiment adopts the accelerated aging method of the chip described in Example 1 to promote the aging of the chip to be tested, and includes the following steps:

[0110] s1: Check the chip to be tested and record any defects;

[0111] s2: using the first ultrasonic wave to clean the chip;

[0112] s3: At a preset temperature, a second ultrasonic wave with a preset pressure is used to apply pressure to the chip to promote chip aging;

[0113] s4: Inspect the chip to determine its quality level.

[0114] In a specific embodiment of the present invention, when the preset temperature is set to 25° C.±5° C., or above 30° C., or in accordance with the temperature cycle of the JEDEC standard.

[0115] In step s1, the chip to be tested is inspected and existing defects are recorded, which may include: inspecting the chip at a temperature of 25°C±5°C or under a temperature cycle following the JEDEC standard, and recording existing defects of the chip.

[0116] Before conducting a damage experiment on the chip to be tested, the chip must first be quality inspected to understand whether the chip has defects and the defect conditions so as to compare it with the chip after the damage experiment.

[0117] According to the specific conditions of the experiment, you can select a suitable temperature environment to perform chip quality testing. According to the selected preset temperature, you can test the chip at room temperature of 25℃±5℃, or in a temperature cycle environment that follows the JEDEC standard, and record the existing defects of the chip.

[0118] In step s2, the chip is cleaned using a first ultrasonic wave, which may include: at a temperature of 25°C ± 5°C or under a temperature cycle that complies with the JEDEC standard, concentrating the energy of the first ultrasonic wave to form a focus, and moving it across each position point of the chip. After cleaning the chip, the chip is inspected and secondary defects are recorded.

[0119] Ultrasonic energy is greater than that of ordinary sound waves. Ultrasonic waves are widely used in medicine, food processing, cleaning and other fields. However, excessive ultrasonic pressure can produce some negative effects. For example, when ultrasonic waves are irradiated on the human body or objects, excessive pressure may cause distortion or damage.

[0120] If the chip is a used chip, it is necessary to clean the oil stains on the chip. By using the characteristics of ultrasound, the various indicators of the first ultrasound are set to clean the chip thoroughly.

[0121] According to the selected preset temperature, the frequency of the first ultrasonic wave can be less than 20KHz at a temperature of 25℃±5℃, or in a temperature cycle following the JEDEC standard, and the propagation medium is a non-conductive liquid, such as silicone oil. Silicone oil has stable performance, a boiling point generally between 150℃ and 300℃, a freezing temperature generally below -50℃, and a thermal conductivity generally between (0.1-0.2) W / (m·K). The thermal conductivity of air is only about 0.025 W / (m·K). The pressure of the first ultrasonic wave will not be too large, which is suitable for cleaning chips. In addition, the propagation medium can also be other media available for ultrasonic propagation, such as gas or liquid.

[0122] In order to further ensure the accuracy of the final quality test, after the first ultrasonic cleaning of the chip, the chip is tested again and recorded. If there is a defect, it is called a secondary defect.

[0123] In step s3, at a preset temperature, a second ultrasonic wave of a preset pressure is used to apply pressure to the chip to promote chip aging, which may include: applying pressure to the chip using a second ultrasonic wave of at least one pressure level among at least three pressure levels; or gradually applying pressure to the chip using a second ultrasonic wave of each pressure level among at least three pressure levels in sequence.

[0124] The pressure of ultrasound is related to its frequency, power density, propagation medium and exposure time. In a certain propagation medium, the greater the frequency and power density, the longer the exposure time, and the greater the ultrasonic pressure. Using this characteristic of ultrasound, accelerated damage experiments are conducted on chips to test the quality of the chips.

[0125] In this embodiment, a suitable preset temperature is selected according to the actual situation of the experiment. The frequency of the second ultrasonic wave with the preset pressure is greater than 20KHz and the power density is 0.1W / CM 2 -3W / CM 2 , the exposure time is greater than 30S, the propagation medium is a non-conductive liquid, the propagation medium is a non-conductive liquid at -40~125℃, such as silicone oil. The propagation medium can also be other media that can be used for ultrasonic propagation.

[0126] When the preset temperature is about 25°C, according to the specific requirements of the experiment and the known chip defects, the data within the range of various indicators of the preset pressure can be selected to form a second ultrasonic wave with a certain pressure, and each position point of the chip is irradiated in turn to cause rapid and powerful pressure damage to the chip.

[0127] When the preset temperature is a high temperature greater than 30°C or follows the temperature cycle of the JEDEC standard, the data within the range of various indicators of the preset pressure can be selected according to the specific requirements of the experiment and the known chip defects to form a second ultrasonic wave with a certain pressure, and each position point of the chip is irradiated in turn to cause rapid and powerful pressure damage to the chip.

[0128] According to the specific conditions of the experiment, the appropriate preset temperature and the appropriate preset pressure are selected to promote the accelerated damage of the chip. If the chip originally has minor defects, the damage of the original minor defects can be accelerated to achieve the purpose of accelerated aging.

[0129] Under the same preset pressure, the pressure applied by the second ultrasonic wave is stronger in a high temperature environment than in a low temperature environment, which can damage the chip faster and accelerate the rate of the experiment.

[0130] Due to different preset pressures, the pressure damage to the chip is different. In this embodiment, in order to observe the damage degree of the chip under different pressures and obtain the quality level of the chip, the preset pressure may include at least three pressure levels, and the pressure applied by the second ultrasonic wave at the first pressure level, the second pressure level, and the third pressure level gradually increases.

[0131] According to the specific conditions of the experiment, a second ultrasonic wave with a suitable preset temperature and a suitable pressure level is selected to perform a pressure test on several chips, which is convenient for comparing the quality of each chip and also for judging the quality of the chip according to the pressure level.

[0132] In this embodiment, the three pressure levels are divided into: the frequency of the second ultrasonic wave of the first pressure level is 20KHz-100KHz, the power density is 0.1W / CM 2 -3W / CM 2 , the exposure time is greater than 30S; the frequency of the second ultrasonic wave of the second pressure level is 100KHz-1MHz, and the power density is 0.1W / CM 2 -3W / CM 2 , the exposure time is greater than 30S; the frequency of the second ultrasonic wave of the third pressure level is 1MHz, and the power density is 0.1W / CM 2 -3W / CM 2 , the exposure time is greater than 30S.

[0133] As the frequency, power density, and exposure time increase, the chip temperature will rise slightly and the damage rate will accelerate.

[0134] The second ultrasonic wave of the first pressure level can produce mechanical stress on the more fragile chip, causing damage to it. The second ultrasonic wave of the second pressure level can loosen or break the solder joints and internal structure of the chip. The second ultrasonic wave of the third pressure level is more likely to cause local thermal effects, which can damage the chip, the inside of the microelectronic components and the packaging materials. As the pressure level gradually increases, the damage to the chip gradually deepens from the outside to the inside.

[0135] In this embodiment, the second ultrasonic wave of the first pressure level, the second pressure level, or the third pressure level may be used to apply pressure to the chip.

[0136] According to the experimental requirements and chip conditions, with appropriate preset temperature, select a second ultrasonic wave of a pressure level to pressurize each position point of the chip in turn. During the experiment, the quality damage of different chips under the same pressure can be mastered to judge the quality of different chips. If the chips are from the same batch, the second ultrasonic wave of each pressure level can be used to pressurize them separately to master the damage results of different pressures and the chip's damage resistance and quality level.

[0137] The second ultrasonic wave with the first pressure level, the second pressure level and the third pressure level may be used in sequence to gradually apply pressure to the chip.

[0138] At the preset temperature, the pressure on the chip area is gradually increased, which can gradually cause damage to the chip. By observing and inspecting the degree of damage to the chip at each pressure level, the relationship between the degree of chip damage and pressure can be grasped, and the quality level of the chip can be fully understood.

[0139] After the ultrasonic wave applies pressure, a voltage bias can be performed to electrically pressurize the chip, further accelerating the aging of the chip. The voltage bias voltage and other index values ​​are set according to specific circumstances.

[0140] Voltage pull-off refers to testing components by applying a voltage higher or lower than the standard power supply voltage. When performing a power pull-off test, the components usually need to experience a momentary change in power supply voltage to test their performance. In order to accelerate the damage to the internal circuit of the chip, the chip is also powered on and pressurized by an external power supply, and the internal circuit structure is affected by a voltage exceeding / lower than the rated value.

[0141] Before step s3, the method further includes dividing the chip into different areas.

[0142] In order to accelerate damage to different parts of the chip in a targeted manner, the chip can be divided into several areas according to the structure of the chip itself.

[0143] The structure of each area of ​​the chip is different. In order to test each area in a targeted manner, the second ultrasonic wave with a preset pressure is used to apply pressure to the chip, which may also include: each area uses ultrasonic waves with different pressure levels to apply pressure. According to the structural characteristics of the area, the pressure level of the ultrasonic wave selected for each area is different, and targeted pressure is more conducive to testing the quality of each area of ​​the chip.

[0144] When testing other semiconductor components, the components can be divided into several areas, and ultrasonic pressure can be applied to each area in a targeted manner.

[0145] According to the specific conditions of the experiment, the appropriate temperatures in s1 and s2 can be selected to match the preset temperature to complete the entire test experiment.

[0146] When the preset temperature is room temperature, the temperature in s1 and s2 can both be 25°C ± 5°C. When the preset temperature is high temperature or a temperature cycle that complies with the JEDEC standard is used, the temperature in s1 and s2 can both be a temperature cycle that complies with the JEDEC standard.

[0147] By utilizing the characteristic of focused ultrasound that can apply pressure in a very small range, the second ultrasonic pressure can be applied to each area one by one. The pressure applied to each area can be determined according to the specific situation, and the quality of each area can be tested in a targeted manner. Pressure can be applied to each area according to the situation, and the pressure applied can be the same, or different pressures can be applied according to the structural characteristics of the area.

[0148] In this embodiment, the area where the capacitor array portion of the chip is located is divided into a capacitor area, and the area where the peripheral circuit portion of the chip is located is divided into a circuit area.

[0149] The capacitor array part of the chip is made of dielectric material, and the peripheral circuit part is made of metal conductive material, which is divided into two areas according to the conductivity of the chip.

[0150] In order to accurately irradiate each position point of the chip and form stronger pressure and faster damage speed, the energy of the ultrasound is concentrated to form a focus and irradiate each position point of the chip. The focused second ultrasound irradiates the chip, which can increase the internal temperature of the irradiation point, make the pressure damage stronger, and increase the damage efficiency. The focused ultrasound moves dynamically, irradiating each position point of the chip in turn, and applying pressure to each position point.

[0151] The focusing of ultrasound waves can be precisely controlled by using lenses or phased array methods.

[0152] In the step s4, the chip is inspected to determine the quality grade of the chip, which may include: inspecting the chip at a temperature of 25°C±5°C or under a temperature cycle following the JEDEC standard, and classifying the quality grade of the chip according to the pressure level of the applied second ultrasonic wave and the degree of damage to the chip.

[0153] After the second ultrasonic wave is applied to damage the chip, the chip is inspected for quality to determine the extent of damage to the chip and determine the chip's quality level.

[0154] The chip is inspected at a temperature of 25°C ± 5°C or under a JEDEC standard temperature cycle, and the quality grade of the chip is divided according to the pressure level of the applied second ultrasonic wave, the damage degree of the chip, and the defects before the damage test.

[0155] The damage of each pressure level can be set as a quality level, and each pressure level can be divided into several quality levels according to the degree of damage.

[0156] If the chips are different, the second ultrasonic wave with the same pressure level can be applied to all of them, and finally the quality level ranking of each chip can be obtained. If the chips are from the same batch, the second ultrasonic wave with different pressure levels can be applied to finally the damage degree of the chip at each level can be obtained, and finally the quality level of this batch of chips can be obtained.

[0157] The appropriate quality inspection temperature can be selected according to the specific circumstances of the experiment.

[0158] In a specific embodiment of the present invention, the preset temperature is a variable temperature.

[0159] In step s1, detecting the chip to be tested may include: detecting the chip at a temperature below 25° C. and recording existing defects of the chip.

[0160] Before conducting a damage experiment on the chip to be tested, the chip must first be quality inspected to understand whether the chip has defects and the defect conditions so as to compare it with the chip after the damage experiment.

[0161] According to the specific conditions of the experiment, the appropriate temperature can be selected to perform chip quality testing. In order to better complete the experiment, the temperature changes from low to high and then back to normal temperature during the entire experiment. In order to adapt to the temperature of subsequent steps, the chip can be initially tested at a temperature 25°C below normal temperature, which is basically the temperature of the living environment, and the existing defects of the chip can be recorded.

[0162] In step s2, the chip is cleaned using a first ultrasonic wave, which may include: at a temperature below 25°C, concentrating the energy of the first ultrasonic wave to form a focus, and moving it to scan each position point of the chip, after cleaning the chip, inspecting the chip, and recording the post-cleaning defects of the chip.

[0163] Ultrasonic energy is greater than that of ordinary sound waves. Ultrasonic waves are widely used in medicine, food processing, cleaning and other fields. However, excessive ultrasonic pressure can produce some negative effects. For example, when ultrasonic waves are irradiated on the human body or objects, excessive pressure may cause distortion or damage.

[0164] If the chip is used, it is necessary to clean the oil stains on the chip. The characteristics of ultrasound can be used to set various indicators of the first ultrasound to clean the chip thoroughly.

[0165] The temperature can be the same as in s1, which is lower than 25°C. The frequency of the first ultrasonic wave is set to be lower than 20KHz. The energy of the first ultrasonic wave is concentrated to form a focus, and is moved to scan each position point of the chip. The focused dynamic scanning first ultrasonic wave can thoroughly and comprehensively clean every part of the chip.

[0166] The propagation medium can be a non-conductive liquid, such as silicone oil. Silicone oil has stable performance, a boiling point generally between 150°C and 300°C, a freezing temperature generally below -50°C, and a thermal conductivity generally between (0.1-0.2) W / (m·K). The thermal conductivity of air is only about 0.025 W / (m·K). The pressure of the first ultrasonic wave will not be too large, which is suitable for cleaning chips. The propagation medium can also be other media available for ultrasonic propagation.

[0167] In order to further ensure the accuracy of the final quality test, after the first ultrasonic cleaning of the chip, the chip is cleaned again and recorded. If there is a defect, it is called a post-cleaning defect.

[0168] In step s3, applying pressure to the chip using a second ultrasonic wave of a preset pressure includes:

[0169] s31: At the first preset temperature, the energy of the second ultrasonic wave is concentrated to form a focus, and each position point of the chip is moved to be irradiated, and then the chip is voltage-biased;

[0170] s32: At the second preset temperature, the energy of the second ultrasonic wave is concentrated to form a focus, and each position point of the chip is moved to be irradiated, and then the chip is voltage-biased;

[0171] s33: at a third preset temperature, the energy of the second ultrasonic wave is concentrated to form a focus, and each position point of the chip is moved to be irradiated, and then the chip is voltage-biased;

[0172] The first preset temperature and the third preset temperature are both lower than the second preset temperature, and the second preset temperature is higher than 35°C.

[0173] The pressure of ultrasound is related to its frequency, power density, propagation medium and exposure time. In a certain propagation medium, the greater the frequency and power density, the longer the exposure time, and the greater the ultrasonic pressure. Using this characteristic of ultrasound, accelerated damage experiments are conducted on chips to test the quality of the chips.

[0174] The frequency of the second ultrasonic wave at the preset pressure is greater than 20KHz and the power density is 0.1W / CM 2 -3W / CM 2 , the exposure time is greater than 30S, and the propagation medium is a non-conductive liquid. The propagation medium can be a non-conductive liquid at -40~125℃, such as silicone oil. Silicone oil has stable performance, a boiling point generally between 150℃ and 300℃, a freezing temperature generally below -50℃, and a thermal conductivity generally between (0.1-0.2) W / (m·K). The thermal conductivity of air is only about 0.025 W / (m·K). The propagation medium can also be other media available for ultrasonic propagation.

[0175] In order to make the experimental process more damaging and the experimental simulation environment more complex and realistic, the second ultrasonic wave applies pressure to the chip in a temperature change from low to high to normal temperature. The fluctuating temperature will accelerate the damage and aging of the chip.

[0176] Under the changing temperature, according to the specific requirements of the experiment and the known chip defects, the data within the range of various indicators of the preset pressure can be selected to form a second ultrasonic wave with a certain pressure, and each position point of the chip can be irradiated in turn to perform rapid and powerful pressure damage. The changing temperature can make the temperature easy to control during the experiment, and the temperature in s1-s4 changes smoothly, ensuring that the entire experiment is carried out stably and efficiently.

[0177] The changing temperature may be a first preset temperature, a second preset temperature, and a third preset temperature in sequence, the first preset temperature and the third preset temperature are both lower than the second preset temperature, the second preset temperature is a high temperature greater than 35°C. The first preset temperature may be greater than the temperature in s2, and the third preset temperature may be a normal temperature of about 25°C.

[0178] The temperature in s2 rises to the first preset temperature. At this time, the temperature is not too high and can be 25℃-30℃. According to the specific requirements of the experiment and the known chip defects, the data within the range of various indicators of the preset pressure are selected to form a second ultrasonic wave with a certain pressure for focused dynamic scanning, and each position point of the chip is irradiated in turn, and the chip is quickly and forcefully pressed and damaged. The first preset temperature rises to the second preset temperature. At this time, the temperature is a high temperature of more than 35℃. The second ultrasonic wave of focused dynamic scanning exerts greater pressure at high temperature, which increases the destructiveness to the chip. The second preset temperature drops appropriately to the third preset temperature, and the second ultrasonic wave of focused dynamic scanning continues to forcefully press each position point of the chip. The temperature returns to normal temperature to facilitate subsequent detection work.

[0179] The energy of the second ultrasonic wave is concentrated to form a focus, which can accurately irradiate each position point of the chip and form a stronger pressure, which makes the damage faster, increases the internal temperature of the irradiated point, and makes the damage efficiency higher. The focused ultrasonic wave moves dynamically, irradiates each position point of the chip in turn, and applies pressure comprehensively. The focus of the ultrasonic wave can be precisely controlled by using a lens or phased array method.

[0180] Voltage pull-off refers to testing components by applying a voltage higher or lower than the standard power supply voltage. When performing a power pull-off test, the components usually need to experience a momentary change in power supply voltage to test their performance. In order to accelerate the damage to the internal circuit of the chip, the chip is also powered on and pressurized by an external power supply, and the internal circuit structure is affected by a voltage exceeding / lower than the rated value.

[0181] In s31, s32 and s33, a voltage bias is performed to apply voltage to the chip to accelerate the aging of the chip. The voltage bias voltage and other index values ​​are set according to the specific situation.

[0182] According to the specific conditions of the experiment, the first preset temperature, the second preset temperature, and the third preset temperature are selected to match with the appropriate preset pressure to accelerate the damage of the chip. If the chip has original minor defects, the damage of the original minor defects can be accelerated.

[0183] When the preset pressure remains unchanged, the pressure applied by the second ultrasonic wave is stronger in a high temperature environment than in a low temperature environment, which can damage the chip faster and accelerate the speed of the experiment.

[0184] In order to further accelerate the damage effect, the chip can be voltage-biased after s2, the cleaned chip can be powered on and pressurized to initially damage the chip, and an inspection can be performed.

[0185] In order to fully understand the effect of the second ultrasonic pressure at each preset temperature in s31, s32, and s33, and the degree of damage and aging of the chip, the chip is inspected after steps s31, s32, and s33. Fully understanding the details of the experiment is more helpful to understand the quality of the chip.

[0186] Due to different preset pressures, the damage to the chip is different. In order to observe the damage degree of the chip under different pressures and obtain the quality level of the chip, the preset pressure may include at least three pressure levels, including the first pressure level, the second pressure level, and the third pressure level. The pressure applied by the second ultrasonic wave at the first pressure level, the second pressure level, and the third pressure level gradually increases.

[0187] According to the specific conditions of the experiment, a second ultrasonic wave with a suitable pressure level is selected to perform pressure tests on several chips, so as to compare the quality of each chip and judge the quality of the chip according to the pressure level.

[0188] The three pressure levels are divided into: the frequency of the second ultrasonic wave of the first pressure level is 20KHz-100KHz, and the power density is 0.1W / CM 2 -3W / CM 2 , exposure time is greater than 30S; the frequency of the second ultrasonic wave of the second pressure level is 100KHz-1MHz, and the power density is 0.1W / CM 2 -3W / CM 2 , the exposure time is greater than 30S; the frequency of the second ultrasonic wave of the third pressure level is above 1MHz, and the power density is 0.1W / CM 2 -3W / CM 2 , exposure time is greater than 30S.

[0189] As the frequency, power density, and exposure time increase, the chip temperature will rise slightly and the damage rate will accelerate.

[0190] The second ultrasonic wave of the first pressure level can produce mechanical stress on the more fragile chip, causing damage to it. The second ultrasonic wave of the second pressure level can loosen or break the solder joints and internal structure of the chip. The second ultrasonic wave of the third pressure level is more likely to cause local thermal effects, which can damage the chip, the inside of the microelectronic components and the packaging materials. As the pressure level gradually increases, the damage to the chip gradually deepens from the outside to the inside.

[0191] Specifically, in step s31, step s32, and step s33, the second ultrasonic wave of the first pressure level, the second pressure level, or the third pressure level may be used to apply pressure to the chip.

[0192] According to the experimental requirements and chip conditions, and in conjunction with the changing temperature during the experiment, a second ultrasonic wave of a certain pressure level is selected to pressurize each position of the chip in turn. During the experiment, the damage of different chips under the same pressure can be mastered to judge the quality of different chips. If the chips are from the same batch, the second ultrasonic wave of each pressure level can be used to pressurize them separately to master the damage results of different pressures and the chip's damage resistance and quality level.

[0193] In step s31, step s32 and step s33, second ultrasonic waves of the first pressure level, the second pressure level and the third pressure level may be used in sequence to gradually apply pressure to the chip.

[0194] Gradually increasing the pressure can gradually damage the chip. By observing and inspecting the degree of damage to the chip at each pressure level, we can understand the relationship between the degree of damage to the chip and the pressure, and fully understand the quality level of the chip.

[0195] Before step s3, the method further includes dividing the chip into different areas.

[0196] In order to accelerate damage to different parts of the chip in a targeted manner, the chip can be divided into several areas according to the structure of the chip itself.

[0197] The structure of each area of ​​the chip is different. In order to test each area in a targeted manner, the second ultrasonic wave with a preset pressure is used to apply pressure to the chip, which may also include: each area uses a second ultrasonic wave with a different pressure level to apply pressure. According to the structural characteristics of the area, the pressure level of the ultrasonic wave selected for each area is different, and targeted pressure is more conducive to testing the quality of each area of ​​the chip.

[0198] When testing other semiconductor components, the components can be divided into several areas, and ultrasonic pressure can be applied to each area in a targeted manner.

[0199] By utilizing the characteristic of focused ultrasound that can apply pressure in a very small range, pressure can be applied area by area. The pressure applied to each area can be determined according to the specific situation, and the quality of each area can be tested in a targeted manner. Pressure can be applied to each area separately according to the situation, and the pressure applied can be the same, or different pressures can be applied according to the structural characteristics of the area.

[0200] In this embodiment, the area where the capacitor array portion of the chip is located is divided into a capacitor area, and the area where the peripheral circuit portion of the chip is located is divided into a circuit area.

[0201] The capacitor array part of the chip is made of dielectric material, and the peripheral circuit part is made of metal conductive material, which is divided into two areas according to the conductivity of the chip.

[0202] In step s4, the chip is inspected to determine the quality grade of the chip, including: inspecting the chip at a temperature of 25°C±5°C, and classifying the quality grade of the chip according to the pressure level of the applied second ultrasonic wave and the degree of damage to the chip.

[0203] After the second ultrasonic wave is applied to damage the chip, the chip is inspected for quality to determine the extent of damage to the chip and determine the chip's quality level.

[0204] When the temperature in s3 is lowered to a normal temperature of about 25° C., the chip is inspected and the quality grade of the chip is classified according to the pressure level of the applied second ultrasonic wave and the degree of damage to the chip.

[0205] The damage of each pressure level can be set as a quality level, and each pressure level can be divided into several quality levels according to the degree of damage.

[0206] If the chips are produced in different batches, the second ultrasonic wave with the same pressure level can be applied to all of them, and finally the quality level ranking of each batch can be obtained. If the chips are from the same batch, the second ultrasonic wave with different pressure levels can be applied to finally the damage degree of the chip at each level can be obtained, and finally the quality level of this batch of chips can be obtained.

[0207] In order to understand the damage change process of the chip in the experiment in more detail, before step s4, steps s2 to s3 can be repeated at least twice, and the number of repetitions is determined according to the experimental requirements and the degree of damage, and each time a test is performed, and the pressure is stopped when the damage requirement is reached. In this embodiment, it is repeated 2-4 times.

[0208] The accelerated aging and quality detection method of the chip according to the present invention is described above by way of example with reference to the accompanying drawings. However, those skilled in the art should understand that various improvements can be made to the accelerated aging and quality detection method of the chip proposed by the present invention without departing from the content of the present invention. Therefore, the protection scope of the present invention should be determined by the content of the attached claims.

Claims

1. A method for accelerating chip aging, characterized in that: The following steps are involved: S1: using the first ultrasonic wave to clean the aged chip; S2: applying pressure to the chip using a second ultrasonic wave with a preset pressure at a preset temperature to promote aging of the chip; The preset pressure includes at least three pressure levels, and the pressure applied by the second ultrasonic wave at the first pressure level, the second pressure level, and the third pressure level gradually increases; the preset temperature includes 25°C ± 5°C, or above 30°C, or a temperature cycle that complies with the JEDEC standard, or a variable temperature; Before step S2, the method further includes dividing the chip into different areas; In the step S2, applying pressure to the chip using a second ultrasonic wave of a preset pressure includes: applying pressure to each area using an ultrasonic wave of a different pressure level; Dividing the chip into different areas includes: dividing the capacitor array part of the chip into capacitor areas, and dividing the peripheral circuit part of the chip into circuit areas.

2. The accelerated aging method of a chip as claimed in claim 1, characterized in that: The frequency of the first ultrasonic wave is less than 20KHz, the frequency of the second ultrasonic wave of the preset pressure is greater than 20KHz, and the power density is 0.1W / CM 2 -3W / CM 2 .

3. The accelerated aging method of a chip as claimed in claim 1, characterized in that: In the step S2, applying pressure to the chip using a second ultrasonic wave of a preset pressure includes: applying pressure to the chip using a second ultrasonic wave of the first pressure level, the second pressure level, or the third pressure level; or using the second ultrasonic wave of the first pressure level, the second pressure level, and the third pressure level in sequence to gradually apply pressure to the chip; The energy of the second ultrasonic wave is concentrated to form a focus to irradiate each position point of the chip.

4. A chip quality detection method, characterized in that: The accelerated aging method of a chip according to any one of claims 1 to 3 is used to accelerate the aging of a chip to be tested, comprising the following steps: s1: Check the chip to be tested and record any defects; s2: using the first ultrasonic wave to clean the chip; s3: applying pressure to the chip using a second ultrasonic wave of the preset pressure at the preset temperature to promote aging of the chip; s4: Inspect the chip to determine the quality level of the chip.

5. The chip quality detection method according to claim 4, characterized in that: When the preset temperature is 25°C ± 5°C, or above 30°C, or follows the temperature cycle of the JEDEC standard, In the step s1, detecting the chip to be tested includes: detecting the chip at a temperature of 25°C±5°C or under a temperature cycle following the JEDEC standard, and recording existing defects of the chip; In the step s2, the chip is cleaned by using the first ultrasonic wave, including: at a temperature of 25°C±5°C or under a temperature cycle in accordance with the JEDEC standard, the energy of the first ultrasonic wave is concentrated to form a focus, and the first ultrasonic wave is moved to scan each position point of the chip, and after cleaning the chip, the chip is inspected and secondary defects are recorded; In the step s3, applying pressure to the chip using the second ultrasonic wave of the preset pressure includes: applying pressure to the chip using the second ultrasonic wave of at least one pressure level of the at least three pressure levels; or gradually applying pressure to the chip using the second ultrasonic wave of each pressure level of the at least three pressure levels in sequence; In the step s4, the chip is inspected to determine the quality grade of the chip, including: inspecting the chip at a temperature of 25°C±5°C or under a temperature cycle following the JEDEC standard, and dividing the quality grade of the chip according to the pressure level of the second ultrasonic wave applied and the degree of damage to the chip.

6. The chip quality detection method according to claim 4, characterized in that: When the preset temperature is a variable temperature, In the step s1, detecting the chip to be tested includes: detecting the chip at a temperature below 25° C. and recording existing defects of the chip; In the step s2, the chip is cleaned by using the first ultrasonic wave, including: at a temperature below 25° C., the energy of the first ultrasonic wave is concentrated to form a focus, and the first ultrasonic wave is moved to scan each position point of the chip, and after cleaning the chip, the chip is inspected, and the post-cleaning defects of the chip are recorded; In the step s3, applying pressure to the chip using a second ultrasonic wave of a preset pressure includes: s31: at a first preset temperature, the energy of the second ultrasonic wave is concentrated to form a focus, and moved to irradiate each position point of the chip, and then the chip is voltage-biased; s32: at a second preset temperature, the energy of the second ultrasonic wave is concentrated to form a focus, and moved to irradiate each position point of the chip, and then the chip is voltage-biased; s33: at a third preset temperature, the energy of the second ultrasonic wave is concentrated to form a focus, and moved to irradiate each position point of the chip, and then the chip is voltage-biased; Wherein, the first preset temperature and the third preset temperature are both lower than the second preset temperature, and the second preset temperature is higher than 35°C; In the step s4, the chip is inspected to determine the quality grade of the chip, including: inspecting the chip at a temperature of 25°C±5°C, and classifying the quality grade of the chip according to the pressure level of the applied second ultrasonic wave and the degree of damage to the chip.

7. The chip quality detection method according to claim 6, characterized in that: In the step s31, the step s32 and the step s33, a second ultrasonic wave of at least one pressure level among the at least three pressure levels is used to apply pressure to the chip; Or in the step s31, the step s32 and the step s33, the second ultrasonic wave of each pressure level of the at least three pressure levels is sequentially used to gradually apply pressure to the chip.

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