Light emitting device

Abstract

A space in which a semiconductor laser element is disposed is defined as a sealed space, and a light-emitting device is reduced in size or simplified in constituent elements. A light-emitting device is provided with: a package having a frame section, a lid section, a base body having an upper surface and a lower surface and having a thickness of 100-500 [mu] m, and a first metal member provided on the upper surface or the lower surface of the base body and having a thickness of 10-150 [mu] m; the substrate is provided with an upper surface, a lower surface and a first through hole from the upper surface to the lower surface; a first conductive member provided in the first through hole; the first metal member is provided on an upper surface or a lower surface of the insulating member so as to cover the first through-hole, and the semiconductor laser element is disposed in a sealed space inside the package, and is electrically connected to the first conductive member and the first metal member.

Description

Technical Field

[0001] The present invention relates to a light emitting device. Background Art

[0002] Japanese Patent Application Laid-Open No. 2019-212752 discloses a light emitting device in which a semiconductor laser element is arranged in a package. In this light emitting device, the semiconductor laser element is arranged in a sealed space in consideration of the influence of dust collection.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2019-212752 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] Disclosed is an invention that solves the technical problem of making a space where a semiconductor laser element is arranged a sealed space and achieving miniaturization of a light emitting device or simplification of components.

[0008] Alternatively, instead of an invention that solves the above-mentioned technical problem, an invention that solves the technical problem of suppressing warpage of a package of a light-emitting device is disclosed.

[0009] Alternatively, instead of an invention that solves the above-mentioned technical problems, an invention that solves the technical problem of making a space where a semiconductor laser element is arranged a sealed space and improving the accuracy of the direction of light emitted from the semiconductor laser element is disclosed.

[0010] Alternatively, instead of an invention that solves the above-mentioned technical problems, an invention that solves the technical problem of mounting other components on the mounting surface of a package with high accuracy is disclosed.

[0011] Alternatively, instead of an invention that solves the above-mentioned technical problems, an invention that solves the technical problem of improving the heat dissipation performance of a package is disclosed.

[0012] Furthermore, in this specification, inventions that complexly solve multiple technical problems among the above-mentioned technical problems are also disclosed.

[0013] Technical solutions for solving technical problems

[0014] The light-emitting device disclosed in the embodiment includes a package and a semiconductor laser element, the package having a frame, a cover, a substrate having an upper surface and a lower surface and a thickness of not less than 100 μm and not more than 500 μm, and a first metal component having a thickness of not less than 10 μm and not more than 150 μm and arranged on the upper surface or the lower surface of the substrate, the substrate having: an insulating component having the upper surface and the lower surface and provided with a first through hole from the upper surface to the lower surface; a first conductive component arranged in the first through hole; the first metal component is arranged on the upper surface or the lower surface of the insulating component in a manner covering the first through hole, the semiconductor laser element is arranged in an internal space of the package and a sealed space, and is electrically connected to the first conductive component and the first metal component.

[0015] In at least one of the one or more inventions disclosed in the embodiments, the space where the semiconductor laser element is arranged can be made a sealed space, and the light emitting device can be miniaturized or the components can be simplified. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a perspective view of a light emitting device according to each embodiment.

[0017] Figure 2 It is a side view of the light emitting device according to each embodiment.

[0018] Figure 3 yes Figure 1 A cross-sectional view of the light emitting device of the first embodiment taken along the III-III section line.

[0019] Figure 4 It is a perspective view showing the state of the interior of the package of the light emitting device according to the first embodiment.

[0020] Figure 5 is with Figure 4 A top view of the light emitting device in the same state.

[0021] Figure 6 It is a bottom view of the package of each embodiment.

[0022] Figure 7 yes Figure 6 FIG. 1 is a cross-sectional view of the package of the first embodiment at section line VII-VII.

[0023] Figure 8 This is a plan view of a state where a cover body is removed from the package of the first embodiment.

[0024] Fig. 9 yes Figure 1 sectional views of the light emitting devices of the second embodiment and the third embodiment taken along the section line IX-IX.

[0025] Fig.10 yes Figure 6 2 is a cross-sectional view of the package of the second embodiment and the third embodiment at the XX section line of FIG.

[0026] Fig.11 It is a perspective view showing the state of the interior of the package of the light emitting device according to the second embodiment.

[0027] Fig.12 is with Fig.11 A top view of the light emitting device in the same state.

[0028] Fig.13 It is a perspective view showing the state of the interior of the package of the light emitting device according to the third embodiment.

[0029] Fig.14 is with Fig.12 A top view of the light emitting device in the same state.

[0030] Description of Reference Numerals

[0031] 1, 2, 3: light emitting device; 10, 10A, 10B: package; 11: substrate; 11A: upper surface; 11B: lower surface; 11C: side surface; 11M: insulating component; 11N: conductive component; 11N1: first conductive component; 11N2: second conductive component; 11H: through hole; 11H1: first through hole; 11H2: second through hole; 12A: wiring part; 12A1: first wiring part; 12A2: second wiring part; 13A: bonding pattern; 14: cover; 14A: upper surface; 14B: First lower surface; 14C: second lower surface; 14D: outer side surface; 14E: inner side surface; 14M: cover; 14N: frame; 15: metal part; 15A: upper surface; 15B: lower surface; 151: first metal part; 152: second metal part; 153: third metal part; 154: fourth metal part; 20: semiconductor laser element; 21A: upper surface; 21B: lower surface; 21C: side surface; 22: light emitting surface; 40: reflecting part; 41A: lower surface; 41B: light reflecting surface; 60: wiring. DETAILED DESCRIPTION

[0032] In this specification or claims, polygons such as triangles and quadrilaterals are still referred to as polygons, including shapes that have been processed by rounding, chamfering, rounding, and chamfering the corners of the polygons. In addition, shapes that have been processed in the middle of the sides are also referred to as polygons, not limited to corners (ends of the sides). That is, shapes that have been partially processed and remain polygonal in the base are included in the interpretation of "polygons" recorded in this specification and claims.

[0033] In addition, it is not limited to polygons. The same applies to words that represent specific shapes such as trapezoids, circles, and concave-convex shapes. In addition, the same applies to the sides that form the shape. In other words, even if a certain side is processed at the diagonal or middle part, the processed part is also included in the interpretation of "side". In addition, when distinguishing "polygons" or "sides" that have not been locally processed from the processed shape, it is marked as "strict", for example, it is recorded as "strict quadrilateral".

[0034] In addition, in the present specification or claims, records such as up and down (above / below), left and right, front and back (front / back), near and depth merely describe the relationship of relative position, orientation, direction, etc., and may not be consistent with the relationship during use.

[0035] In addition, in the drawings, arrows are used to indicate directions such as the X direction, the Y direction, and the Z direction. The directions of the arrows are unified among multiple drawings of the same embodiment. In addition, in the drawings, the directions of the arrows marked with X, Y, and Z are set to the positive direction, and the opposite direction is set to the negative direction. For example, the direction marked with X before the arrow is the X direction and is the positive direction. In addition, in this specification, the direction that is the X direction and is the positive direction is referred to as the "positive direction of X", and the opposite direction is referred to as the "negative direction of X". When referred to as the "X direction", any direction of the positive direction and the negative direction is included. The same is true for the Y direction and the Z direction.

[0036] In addition, in this specification, when a certain object is determined as "one or more" and the object is described, the scheme in which the object is one and the scheme in which the object is multiple are collectively described separately. Therefore, by the description determined as "one or more", any of the embodiments having one or more objects, the embodiments having at least one object, and the embodiments having multiple objects can be supported.

[0037] In addition, in this specification, the description of "one or each" object is a summary of the description of one object in an embodiment having one object, the description of one object in an embodiment having multiple objects, and the descriptions of multiple objects in an embodiment having multiple objects. Therefore, the description of "one or each" object can support any of the following situations: in an embodiment having one object, the one object has description content; in an embodiment having multiple objects, at least one of the objects has description content; in an embodiment having multiple objects, the multiple objects have description content respectively; and in an embodiment having one or more objects, all objects have description content.

[0038] In addition, in this specification, for example, when describing a constituent element, it is recorded as a "component" or "section". A "component" refers to an object that is physically treated as a single entity. An object that is physically treated as a single entity can also be said to be an object that is treated as a component in the manufacturing process. On the other hand, a "section" refers to an object that may not be treated as a single entity physically. For example, "section" is used when a part of a component is understood partially, when a plurality of components are understood collectively as a single object, etc.

[0039] In addition, the distinction between "component" and "portion" mentioned above does not mean that the scope of rights is intentionally limited in the equivalent interpretation. That is, even if there is a component described as a "component" in the claims, the applicant does not recognize that it is essential for the application of the present invention to treat the component as a single body physically.

[0040] In addition, in this specification or claims, when a certain component has multiple components and is expressed separately, the components are marked with "first" or "second" to distinguish them. In addition, the objects distinguished in this specification and the claims may be different. Therefore, even if the claims record a component marked with the same annotation as in this specification, the object determined by the component may be inconsistent between this specification and the claims.

[0041] For example, in this specification, there are constituent elements marked as "first", "second", and "third" to distinguish them. When the constituent elements marked as "first" and "third" in this specification are recorded in the claims, from the perspective of easy reading, they will be marked as "first" and "second" in the claims to distinguish them. In this case, the constituent elements marked as "first" and "second" in the claims refer to the constituent elements marked as "first" and "third" in this specification, respectively. In addition, the applicable objects of this rule are not limited to constituent elements, and it can also be reasonably and flexibly applied to other objects.

[0042] Below, the scheme for implementing the present invention is described. In addition, the specific scheme for implementing the present invention is described with reference to the accompanying drawings. In addition, the scheme for implementing the present invention is not limited to the specific scheme. That is, the illustrated embodiment is not the only scheme for implementing the present invention. In addition, the size, positional relationship, etc. of the components shown in the drawings are exaggerated for ease of understanding.

[0043] <First embodiment>

[0044] A light emitting device 1 according to the first embodiment will be described. Figures 1 to 8 It is a diagram for explaining an exemplary embodiment of the light emitting device 1 . Figure 1 It is a perspective view of the light emitting device 1 . Figure 2 is a side view of the light emitting device 1 . Figure 3 yes Figure 1 A cross-sectional view of the light emitting device 1 taken along the III-III section line. Figure 4 It is a perspective view showing the state inside the package 10 of the light emitting device 1 . Figure 5 is with Figure 4 A top view of the light emitting device 1 in the same state. Figure 6 is a bottom view of the package 10 . Figure 7 yes Figure 6 A cross-sectional view of the package 10 taken along the section line VII-VII. Figure 8 This is a top view of the package 10 after the cover 14 is removed. Figure 5 , Figure 6 as well as Figure 8 In FIG. 1 , the first through hole 11H1 and the second through hole 11H2 are indicated by dotted lines.

[0045] The light emitting device 1 includes a plurality of components including a package 10 , one or more semiconductor laser elements 20 , one or more reflecting members 40 , and one or more wirings 60 .

[0046] In addition, the light emitting device 1 may further include other components. For example, the light emitting device 1 may further include a semiconductor laser element in addition to one or more semiconductor laser elements 20. In addition, the light emitting device 1 may not include some of the multiple components listed here.

[0047] First, each component will be described.

[0048] (Package 10)

[0049] The package 10 includes a base 11 and a cover 14. The package 10 includes one or more metal parts 15. The cover 14 is bonded to the base 11 to form the package 10. An internal space in which other components are arranged is defined in the package 10. The internal space is a closed space surrounded by the base 11 and the cover 14. In addition, the internal space can be a space sealed in a vacuum or airtight state.

[0050] When viewed from above, the outer edge shape of the package 10 is a rectangle. The rectangle may be a rectangle having a long side and a short side. In the package 10 shown in the figure, the long side direction of the rectangle is the same direction as the X direction, and the short side direction is the same direction as the Y direction. In addition, when viewed from above, the outer edge shape of the package 10 may not be a rectangle.

[0051] The package 10 has an internal space in which other components are arranged. The upper surface 11A of the package 10 is a part of the region defining the internal space. In addition, each inner side surface 14E and the first lower surface 14B of the package 10 are a part of the region defining the internal space.

[0052] The base 11 has an upper surface 11A and a lower surface 11B. In addition, the base 11 has one or more side surfaces 11C. The base 11 is formed in a rectangular parallelepiped flat plate shape. In addition, the shape of the base 11 may not be a rectangular parallelepiped.

[0053] The outer edge shape of the upper surface 11A is a rectangle. The rectangle may be a rectangle having a long side and a short side. In the illustrated base 11, the long side direction of the rectangle is the same direction as the X direction, and the short side direction is the same direction as the Y direction.

[0054] The base 11 has one or more conductive members 11N and an insulating member 11M having an upper surface 11A and a lower surface 11B. One or more through holes 11H are provided in the insulating member 11M. One or each through hole 11H extends from the upper surface 11A to the lower surface 11B.

[0055] One or each of the conductive members 11N is provided in the through hole 11H of the insulating member 11M. By providing the conductive member 11N in the through hole 11H, a conduction path connecting the internal space of the package 10 and the external space is realized.

[0056] The highest point of the conductive component 11N provided in the through hole 11H is the same as or located above the upper surface 11A of the insulating component 11M. In addition, the lowest point of the conductive component 11N provided in the through hole 11H is the same as or located below the lower surface 11B of the insulating component 11M.

[0057] The one or more through holes 11H include a first through hole 11H1 and a second through hole 11H2. The one or more conductive components 11N include a first conductive component 11N1 provided in the first through hole 11H1 and a second conductive component 11N2 provided in the second through hole 11H2.

[0058] One or each metal component 15 has an upper surface 15A and a lower surface 15B. One or each metal component 15 is provided on the upper surface 11A or the lower surface 11B of the substrate 11. One or more metal components 15 include a metal component 15 provided on the substrate 11 in a manner covering the through hole 11H. When viewed from above or from above, the through hole 11H is blocked by the metal component 15. Thus, the sealing performance of the package 10 can be improved.

[0059] The thickness of the base 11 is 100 μm or more and 500 μm or less. Alternatively, the thickness may be 150 μm or more. Alternatively, the thickness may be 300 μm or less. The thickness of the base 11 refers to the width from the upper surface 11A to the lower surface 11B of the base 11 .

[0060] The thickness of one or each metal component 15 is greater than 10 μm and less than 150 μm. In addition, the thickness may be greater than 50 μm. In addition, the thickness may be less than 100 μm. In addition, the thickness of the metal component 15 refers to the width from the upper surface 15A to the lower surface 15B of the metal component 15. By setting the thickness of the metal component 15 that blocks the through hole 11H to be greater than 10 μm, it is possible to suppress the sealing of the internal space of the package 10 from being reduced due to the through hole 11H, and to achieve a sealed space. In addition, by suppressing the thickness of the metal component 15, it is possible to achieve miniaturization of the light-emitting device.

[0061] One or each metal component 15 can be composed of one or more metal layers. For example, it can be composed of a metal layer formed of a thin film of less than 0.5 μm and a metal layer formed of a thickness of more than 10 μm. The thin film metal layer is used, for example, to improve the close contact of the metal component 15 provided on the insulating component 11M.

[0062] Whether the internal space of the package 10 can be called a sealed space can be determined by measuring the immersion method, i.e., the bombing method, in accordance with the standard number "JIS Z2331: 2006" and the standard name "Helium Leakage Test Method". 3 ] Less than 50.0mm 3 The package can reduce the actual leakage of helium gas [Pa·m 3 / sec] is less than 1.0×10 -7 Pa·m 3 / sec as the condition for the sealed space. Alternatively, from the perspective of reliability and assurance, a condition with a higher degree of sealing can be used, relative to the volume of the internal space [mm 3 ] is 0.5mm 3 Above and 4.0mm 3 The following package can reduce the measured helium leakage [Pa·m 3 / sec] is less than 1.0×10 -9 Pa·m3 / sec is used as a condition for the sealed space. In addition, when the product is a light-emitting device having a package and other components, the test can be performed directly in the state of the light-emitting device without disassembling it into the package. However, in the case where the package cannot be properly tested due to the influence of components other than the package, the test can be performed in a state where the package can be properly tested, such as a state where the components causing the influence are separated from the package. In this measurement, for example, the inspection device "MUH-0100" of FUKUDA CO., LTD. can be used.

[0063] In addition, in determining whether the internal space of the package 10 can be called a sealed space, the test Q in the standard number "JIS C0026: 2001 (IEC 60068-2-17: 1994)" and the standard name "Environmental test methods - Electrical and electronic - Sealing (airtightness) test methods" can also be performed. c :Test method 2 of the sealing test based on gas leakage: "immersion in high-temperature liquid" test. If the semiconductor laser element is arranged in the internal space of the package, the temperature of the liquid in the test is maintained at a value 1°C to 5°C higher than the highest operating temperature when the operating temperature range as the product specification is specified in the light-emitting device equipped with the package. On the other hand, when there is no operating temperature range specified as the product specification, it is maintained at a temperature of 75°C to 80°C. In addition, the test is carried out in a state where the uppermost part of the package or light-emitting device is immersed in a depth of at least 10 mm from the liquid surface. The immersion time of the package or light-emitting device is set to 10 minutes (as long as 10 minutes have passed), but when the time specified in the product specification is specified by a time shorter than 10 minutes, it is sufficient to pass the time specified in the product specification. The judgment standard of the test can be whether the flow of clear bubbles, the growth of two or more large bubbles or attached bubbles is observed during the test by visual observation of a person with a visual acuity of 1.0 or above. In addition, when the product is a light-emitting device equipped with a package and other components, the test can be carried out directly in the state of the light-emitting device without disassembling it into the package. However, in the case where bubbles generated by components other than the package are observed and an appropriate test cannot be performed on the package, the test can be performed in a state where the component is separated from the package, etc., in which the package can be properly tested. The test based on the test method 2 is suitable for determining whether a larger leak occurs compared to the measurement based on the immersion method, i.e., the helium pressure method. By performing this test, the situation where the judgment criteria are met can be regarded as a necessary condition for a sealed space. In addition, in this judgment, for example, the inspection device "G-203A" of Hisol Corporation can be used.

[0064] The one or more metal members 15 include a first metal member 151 and a second metal member 152. The first metal member 151 is provided on the insulating member 11M so as to cover the first through hole 11H1. The second metal member 152 is provided on the insulating member 11M so as to cover the second through hole 11H2.

[0065] The first metal component 151 and the second metal component 152 are provided on the same surface of the insulating component 11M. For example, the first metal component 151 and the second metal component 152 are provided on the lower surface 11B of the base 11. In this case, the lower surface 15B of the first metal component 151 and the lower surface 15B of the second metal component 152 are located below the lower surface 11B of the base 11. The lower surface 15B of the first metal component 151 or the lower surface 15B of the second metal component 152 can be the bottom of the package 10.

[0066] The one or more metal components 15 include a first metal component 151 and a third metal component 153. The third metal component 153 is provided on a surface opposite to the surface on which the first metal component 151 is provided. For example, the first metal component 151 is provided on the lower surface 11B of the insulating component 11M, and the third metal component 153 is provided on the upper surface 11A of the insulating component 11M. By providing the metal component 15 of the same thickness on the upper and lower surfaces, the warping of the package 10 can be suppressed.

[0067] The third metal component 153 is provided on the insulating component 11M without covering the first through hole 11H1. In other words, the third metal component 153 does not overlap with the first through hole 11H1 when viewed from above. By providing the third metal component 153 without covering the first through hole 11H1, the upper surface 15A of the third metal component 153 can be accurately provided parallel to the upper surface 11A of the insulating component 11M.

[0068] In a plan view, a portion of the third metal member 153 overlaps a portion of the first metal member 151. By overlapping the first metal member 151 and the third metal member 153, warping of the package 10 can be suppressed.

[0069] The thickness of the insulating member 11M is greater than the thickness of the first metal member 151 . In addition, the thickness of the insulating member 11M is equal to or greater than the sum of the thickness of the first metal member 151 and the thickness of the third metal member 153 .

[0070] All through holes 11H provided in insulating member 11M are covered by any one of metal members 15 provided on upper surface 11A or lower surface 11B. In other words, there are no through holes 11H that are not covered by metal members 15 on both upper surface 11A and lower surface 11B.

[0071] For one or each through hole 11H, the distance from the through hole 11H to the outer edge of the metal member 15 covering the through hole 11H is 50 μm or more. Alternatively, the distance may be 100 μm or more. By providing the metal member 15 with a certain width from the through hole 11H, it is easy to ensure sealing.

[0072] The base 11 has one or more wiring sections 12A. The one or more wiring sections 12A are arranged in the internal space of the package 10. One or each wiring section 12A is provided on the upper surface 11A of the package 10.

[0073] One or more wiring sections 12A are connected to the conductive component 11N. One or more wiring sections 12A include a wiring section 12A provided in a manner covering the first through hole 11H1 or the second through hole 11H2. One or more wiring sections 12A include a first wiring section 12A1 provided in a manner covering the first through hole 11H1. One or more wiring sections 12A include a second wiring section 12A2 provided in a manner covering the second through hole 11H2.

[0074] The third metal component 153 is electrically connected to the first wiring portion 12A1. The third metal component 153 and the first wiring portion 12A1 have a portion that is in physical contact with each other. For example, the third metal component 153 is electrically connected to the first wiring portion 12A by the lower end of the side surface of the third metal component 153 being in physical contact with the outer edge of the upper surface of the first wiring portion 12A. The first through hole 11H1 does not overlap with the third metal component 153 when viewed from above, and is covered by the first wiring portion 12A1. In the package 10, there is no metal component 15 in contact with the second wiring portion 12A2.

[0075] The metal component 15 provided without covering the through hole 11H can be provided on the lower surface 11B of the base 11. The metal component 15 is larger than any of the first metal component 151 and the second metal component 152 when viewed from above. The metal component 15 overlaps with the third metal component 153 when viewed from above. Thus, a heat dissipation path is formed from the third metal component 153 to the metal component 15.

[0076] The first metal component 151 and the second metal component 152 are arranged side by side in the short-side direction of the lower surface 11B when viewed from below. The metal component 15 that does not cover the through hole 11H is arranged away from any of the first metal component 151 and the second metal component 152 in the long-side direction of the lower surface 11B. Thus, the balance of the package 10 is stabilized.

[0077] The thickness (vertical width) of the wiring portion 12A is 0.2 μm to 5 μm. The thickness of the wiring portion 12A is sufficiently thinner than the thickness of the metal member 15. For example, the thickness of the wiring portion 12A may be 10% or less of the thickness of the metal member 15.

[0078] All through holes 11H from upper surface 11A to lower surface 11B of base 11 are covered by metal member 15 on at least one of upper surface 11A and lower surface 11B. Since there are no through holes 11H not covered by metal member 15, the sealing performance of package 10 can be improved.

[0079] Between the "plurality of metal parts 15" which are all the metal parts 15 provided on the upper surface 11A or the lower surface 11B of the base 11 and the "plurality of through holes 11H" which are all the through holes 11H from the upper surface 11A to the lower surface 11B of the base 11, the relationship that the "plurality of through holes 11H" are all covered by any one of the "plurality of metal parts 15" is established. It should be noted that the "plurality of metal parts 15" herein includes at least the first metal part 151 and the second metal part 152, and the "plurality of through holes 11H" includes at least the first through hole 11H1 and the second through hole 11H2.

[0080] The base 11 has a bonding pattern 13A. The bonding pattern 13A is provided on the upper surface 11A. The bonding pattern 13A is provided in a ring shape. The bonding pattern 13A is provided in a rectangular ring shape. The bonding pattern 13A is provided near the outer edge of the upper surface 11A in a plan view.

[0081] The bonding pattern 13A does not cover the through hole 11H. That is, the bonding pattern 13A does not overlap with any through hole 11H when viewed from above. The thickness of the bonding pattern 13A is greater than 0.2 μm and less than 5 μm. The thinner the thickness of the bonding pattern 13A is, the smaller the width of the package in the vertical direction can be. The thickness of the bonding pattern 13A is less than the thickness of the metal component 15. In addition, the thickness of the bonding pattern 13A may also be greater than the thickness of the metal component 15.

[0082] The base 11 can be formed using, for example, ceramic as a main material. Examples of the ceramic used as a main material of the base 11 include aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide.

[0083] Here, the main material refers to the material that occupies the largest proportion of mass or volume in the object to be formed. In addition, when the object to be formed is formed by one material, the material is the main material. That is, a certain material is the main material, including the proportion of the material occupied by 100%.

[0084] The conductive member 11N can be formed using a metal material as a main material, for example. Examples of the metal material that is the main material of the conductive member 11N include single metals such as Cu, Ag, Ni, Cr, and W, or alloys containing these metals. The conductive member 11N can be composed of one or more metal layers, for example.

[0085] The metal component 15 can be formed using a metal material as a main material. Examples of the metal material that is the main material of the metal component 15 include single metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, or alloys containing these metals. The metal component 15 can be composed of, for example, one or more metal layers. The metal component 15 can be formed on the upper surface 11A or the lower surface 11B of the substrate 11 by, for example, plating, lamination, or the like.

[0086] The wiring portion 12A can be formed using a metal material as a main material, for example. Examples of the metal material that is the main material of the wiring portion 12A include single metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, or alloys containing these metals. The wiring portion 12A can be composed of one or more metal layers, for example. The wiring portion 12A can be formed on the upper surface 11A or the lower surface 11B of the substrate 11 by plating, sputtering, evaporation, or the like.

[0087] The bonding pattern 13A can be formed using a metal material as a main material, for example. As the metal material that is the main material of the bonding pattern 13A, for example, single metals such as Cu, Ag, Ni, Au, Sn, Ti, Pd, or alloys containing these metals can be cited. The bonding pattern 13A can be composed of one or more metal layers, for example.

[0088] The cover 14 has an upper surface 14A and a first lower surface 14B. The cover 14 has a second lower surface 14C. The cover 14 has one or more outer side surfaces 14D. The cover 14 has one or more inner side surfaces 14E. One or more outer side surfaces 14D intersect with the upper surface 14A. One or more outer side surfaces 14D intersect with the second lower surface 14C. One or more inner side surfaces 14E intersect with the first lower surface 14B. One or more inner side surfaces 14E intersect with the second lower surface 14C.

[0089] The outer edge shape of the cover body 14 is rectangular when viewed from above. The outer edge shape of the cover body 14 is the outer edge shape of the package 10 when viewed from above. The outer edge shape of the upper surface 14A is rectangular when viewed from above. The rectangle can be a rectangle with long sides and short sides. The long side direction of the upper surface 14A is parallel to the long side direction of the outer edge shape of the cover body 14. In addition, the outer edge shape of the upper surface 14A when viewed from above may not be a rectangle.

[0090] The first lower surface 14B is surrounded by the second lower surface 14C when viewed from above. The second lower surface 14C is an annular surface surrounding the first lower surface 14B when viewed from above. The second lower surface 14C is a rectangular annular surface. Here, the frame defined by the inner edge of the second lower surface 14C is referred to as the inner frame of the second lower surface 14C, and the frame defined by the outer edge of the second lower surface 14C is referred to as the outer frame of the second lower surface 14C.

[0091] The cover 14 has a recessed portion surrounded by a frame of the second lower surface 14C. The recessed portion defines a portion in the cover 14 that is recessed upward from the second lower surface 14C. The first lower surface 14B is a portion of the recessed portion. One or more inner side surfaces 14E are a portion of the recessed portion. The first lower surface 14B is located above the second lower surface 14C.

[0092] The cover body 14 includes a cover portion 14M and a frame portion 14N. The cover portion 14M and the frame portion 14N may be made of different materials. The cover body 14 may be configured to include a cover member corresponding to the cover portion 14M and a frame member corresponding to the frame portion 14N.

[0093] The cover portion 14M includes an upper surface 14A. The cover portion 14M includes a first lower surface 14B. The frame portion 14N includes a second lower surface 14C. The frame portion 14N includes one or more outer side surfaces 14D and one or more inner side surfaces 14E.

[0094] The cover 14 is bonded to the base 11. The second lower surface 14C of the cover 14 is bonded to the upper surface 11A of the base 11. The cover 14 is bonded to the bonding pattern 13A of the base 11. The cover 14 is bonded to the base 11 via an adhesive.

[0095] The cover 14 has light-transmitting properties. Here, light-transmitting properties refer to a transmittance of 80% or more with respect to light incident on the cover 14. The cover 14 may also have a non-light-transmitting region (region without light-transmitting properties) in part.

[0096] The cover body 14 can be formed using glass as a main material, for example. The cover body 14 can also be formed using a cover member and a frame member formed using different main materials. The cover member can be formed using a light-transmitting material such as glass or sapphire as a main material, for example. The frame member can be formed using glass or ceramic as a main material, for example. Examples of ceramics that are the main material of the frame member include aluminum nitride, silicon nitride, aluminum oxide, or silicon carbide.

[0097] The width of the package 10 in the X direction can be greater than 1 mm and less than 3 mm. The width of the package 10 in the Y direction can be greater than 2 mm and less than 4 mm. The width of the package 10 in the Z direction can be greater than 1 mm and less than 3 mm. In this way, the light-emitting device 1 can be miniaturized. The width of the internal space of the package 10 in the X direction can be greater than 0.7 mm and less than 2.4 mm. The width of the internal space of the package 10 in the Y direction can be greater than 1.7 mm and less than 3.6 mm. The width of the internal space of the package 10 in the Z direction can be greater than 0.3 mm and less than 1.5 mm. The internal volume of the internal space of the package 10 can be 0.357 mm 3 Above and 12.96mm 3 the following.

[0098] (Semiconductor Laser Element 20)

[0099] The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of side surfaces 21C. The shape of the upper surface 21A is a rectangle having long sides and short sides. The outer shape of the semiconductor laser element 20 when viewed from above is a rectangle having long sides and short sides. In addition, the shape of the upper surface 21A and the outer shape of the semiconductor laser element 20 when viewed from above are not limited thereto.

[0100] The semiconductor laser element 20 has a light emitting surface 22 for emitting light. For example, the side surface 21C can be the light emitting surface 22. The side surface 21C serving as the light emitting surface 22 intersects with the short side of the upper surface 21A. Also, for example, the upper surface 21A can be the light emitting surface 22.

[0101] The semiconductor laser element 20 can be a single-emitter semiconductor laser element including one emitter, or a multi-emitter semiconductor laser element including a plurality of emitters.

[0102] The semiconductor laser element 20 can be, for example, a semiconductor laser element that emits blue light. Alternatively, for example, the semiconductor laser element 20 can be a semiconductor laser element that emits green light. Alternatively, for example, the semiconductor laser element 20 can be a semiconductor laser element that emits red light. Alternatively, the semiconductor laser element 20 can be a semiconductor laser element that emits light of other colors or wavelengths.

[0103] Here, blue light refers to light having a peak emission wavelength in the range of 420 nm to 494 nm, green light refers to light having a peak emission wavelength in the range of 495 nm to 570 nm, and red light refers to light having a peak emission wavelength in the range of 605 nm to 750 nm.

[0104] As the semiconductor laser element 20 emitting blue light or the semiconductor laser element 20 emitting green light, a semiconductor laser element including a nitride semiconductor can be cited. As the nitride semiconductor, for example, a GaN-based semiconductor such as GaN, InGaN, and AlGaN can be used. As the semiconductor laser element 20 emitting red light, a semiconductor laser element including a GaAs-based semiconductor such as an InAlGaP-based semiconductor, a GaInP-based semiconductor, and a GaAs-based semiconductor such as an AlGaAs can be cited.

[0105] The semiconductor laser element 20 emits laser light with directivity. Divergent light with diffusion is emitted from the light exit surface 22 (exit end surface) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms an elliptical far field pattern (hereinafter referred to as "FFP") on a surface parallel to the light exit surface 22. FFP refers to the shape and light intensity distribution of the emitted light at a position far from the light exit surface of the semiconductor laser element.

[0106] Here, light passing through the center of the elliptical shape of the FFP, in other words, light with peak intensity in the light intensity distribution of the FFP, is referred to as light traveling on the optical axis or light passing through the optical axis. 2 Light with an intensity above this is called main light.

[0107] The shape of the FFP of the light emitted from the semiconductor laser element 20 is an elliptical shape in which the stacking direction is longer than the direction perpendicular to the stacking direction in a plane parallel to the light emitting surface 22. The stacking direction refers to the direction in which a plurality of semiconductor layers including an active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can be referred to as the surface direction of the semiconductor layer. In addition, the long-axis direction of the elliptical shape of the FFP can also be referred to as the fast-axis direction of the semiconductor laser element 20, and the short-axis direction can be referred to as the slow-axis direction of the semiconductor laser element 20.

[0108] Based on the light intensity distribution of FFP, 1 / e of the peak light intensity 2 The angle at which the light of the light intensity of the semiconductor laser element 20 is diffused is defined as the diffusion angle of the light of the semiconductor laser element 20. Here, the diffusion angle of the light is the ratio of the light of the peak light intensity (the light passing through the optical axis) to 1 / e of the peak light intensity. 2 The light diffusion angle is expressed by the light intensity of the peak light intensity. 2 In addition to the light intensity of the peak light intensity, it can also be calculated based on the light intensity at half the peak light intensity. In the description of this specification, when simply referring to "light diffusion angle", it means 1 / e of the peak light intensity. 2 The diffusion angle of light under the light intensity.

[0109] The diffusion angle of the light emitted from the semiconductor laser element 20 in the fast axis direction can be greater than 15 degrees and less than 90 degrees. In addition, the diffusion angle of the light in the slow axis direction can be greater than 0 degrees and less than 8 degrees. In addition, the diffusion angle of the light in the fast axis direction is larger than the diffusion angle in the slow axis direction.

[0110] (Reflection member 40)

[0111] The reflecting member 40 has a lower surface 41A and a light reflecting surface 41B for reflecting light. In addition, the light reflecting surface 41B is inclined relative to the lower surface 41A. The straight line connecting the lower end and the upper end of the light reflecting surface 41B is inclined relative to the lower surface 41A. The angle at which the light reflecting surface 41B is inclined relative to the lower surface 41A is referred to as the inclination angle of the light reflecting surface 41B.

[0112] The light reflecting surface 41B is a flat surface. Alternatively, the light reflecting surface 41B may be a curved surface. The inclination angle of the light reflecting surface 41B is 45 degrees. Alternatively, the inclination angle of the light reflecting surface 41B may not be 45 degrees.

[0113] The main material of the reflector 40 can be glass, metal, etc. A heat-resistant material can be used as the main material of the reflector 40. For example, glass such as quartz or BK7 (borosilicate glass), metal such as Al, etc. can be used as the main material. The reflector 40 can also be formed using Si as the main material.

[0114] If the main material is a reflective material such as Al, the light reflecting surface 41B can be formed by the main material. Instead of forming the light reflecting surface 41B by the main material, the main material can be used to form the general shape of the reflective component 40, and the light reflecting surface 41B can be formed on the surface of the general shape. In this case, the light reflecting surface 41B can be made of a metal layer such as Ag or Al, Ta 2 O 5 / SiO 2 、TiO 2 / SiO 2 , Nb 2 O 5 / SiO 2 Etc. dielectric multilayer film formation.

[0115] The reflectivity of the light reflecting surface 41B to the peak wavelength of the light irradiated to the light reflecting surface 41B is 90% or more. Alternatively, the reflectivity may be 95% or more. Alternatively, the reflectivity may be 99% or more. The light reflectivity is 100% or less.

[0116] (Wiring 60)

[0117] The wiring 60 is a linear conductive material with two ends as a junction. The junctions at the two ends become the junctions with other components. The wiring 60 is used for electrical connection between two components. The wiring 60 is, for example, a metal wire. For example, gold, aluminum, silver, copper, etc. can be used as the metal.

[0118] Next, the light emitting device 1 will be described.

[0119] (Light-emitting device 1)

[0120] In the light emitting device 1, one or each semiconductor laser element 20 is arranged in the internal space of the package 10. Thus, the space where the semiconductor laser element 20 is arranged can be made a sealed space.

[0121] One or each semiconductor laser element 20 is disposed on the upper surface 11A of the base 11. One or each semiconductor laser element 20 is disposed on the upper surface 11A of the base 11 via the metal member 15.

[0122] One or each semiconductor laser element 20 is disposed on the upper surface 15A of the metal member 15. By disposing the semiconductor laser element 20 on the metal member 15, the position of the light emitting point of the semiconductor laser element 20 can be raised.

[0123] One or each semiconductor laser element 20 is directly bonded to the metal member 15. “Directly” here means that there are no components other than an adhesive between the semiconductor laser element 20 and the metal member 15. This simplifies the components of the light emitting device 1.

[0124] The metal component 15 configuring the semiconductor laser element 20 is electrically connected to the conductive component 11N of the package 10. The semiconductor laser element 20 is electrically connected to the conductive component 11N and the metal component 15, which is provided so as to cover the through hole 11H provided with the conductive component 11N. For example, the semiconductor laser element 20 is electrically connected to the first conductive component 11N1 and the first metal component 151. In addition, the semiconductor laser element 20 is electrically connected to the second conductive component 11N2 and the second metal component 152.

[0125] Semiconductor laser element 20 is disposed on upper surface 15A of third metal member 153. Upper surface 15A of third metal member 153 is accurately parallel to upper surface 11A of base 11, and the direction of light emitted from semiconductor laser element 20 is also accurately improved.

[0126] By providing the third metal component 153 on the upper surface 11A of the substrate 11 without covering the through hole 11H, and providing the first metal component 151 on the lower surface 11B of the substrate 11 in a manner that covers the through hole 11H, benefits can be obtained in terms of both the sealing of the internal space of the package 10 and the accuracy of the direction of light emitted from the semiconductor laser element 20.

[0127] In addition, by matching with the first metal component 151, the second metal component 152 covering the second through hole 11H2 is also set on the lower surface 11B of the substrate 11, so that the bottom of the package 10 directly below the first through hole 11H1 can be aligned with the bottom of the package 10 directly below the second through hole 11H2, which helps to stabilize the package 10.

[0128] The semiconductor laser element 20 is arranged so that the longitudinal direction of the upper surface 21A is parallel to the longitudinal direction of the package 10. By arranging in this way, the light emitting device 1 can be miniaturized.

[0129] One or each semiconductor laser element 20 emits light laterally from the side surface 21C serving as the light emitting surface 22. Light traveling in a first direction is emitted from one or each semiconductor laser element 20. In the illustrated light emitting device 1, the first direction is the same direction as the X direction. The optical axis of the light emitted from one or each semiconductor laser element 20 is the same direction as the X direction.

[0130] The distance from upper surface 11A of package 11 to lower surface 21B of semiconductor laser element 20 in the direction perpendicular to upper surface 11A of package 11 is greater than 0 μm and less than 150 μm. This distance is preferably greater than 50 μm and less than 130 μm. This allows miniaturization of light emitting device 1.

[0131] In the light emitting device 1, one or more reflecting members 40 are arranged in the internal space of the package 10. One or each reflecting member 40 reflects light emitted from the semiconductor laser element 20. The reflecting member 40 is arranged at a position away from the semiconductor laser element 20 in the first direction.

[0132] The light traveling in the first direction from the semiconductor laser element 20 is reflected by the reflecting member 40. The light reflecting surface 41B of the reflecting member 40 reflects the light emitted laterally from the semiconductor laser element 20 upward.

[0133] One or each reflective member 40 is disposed at a position not overlapping with through hole 11H in plan view. Since lower surface 41A of reflective member 40 can be prevented from being mounted tilted relative to lower surface 11B of base 11 due to conductive member 11N, lower surface 41A of reflective member 40 can be mounted with high accuracy.

[0134] The second through hole 11H2 is provided at a position separated in the second direction from the semiconductor laser element 20 in a plan view and at a position separated in the second direction from the reflective member 40. Thus, the ratio of the width in the long side direction to the width in the short side direction of the package 10 in a plan view can be suppressed. In addition, if the width in the long side direction is increased, the stress in the long side direction is increased, which affects the mounting accuracy of the semiconductor laser element 20.

[0135] In the light emitting device 1, one or more wirings 60 are provided to electrically connect one or more semiconductor laser elements 20 to the package 10. The one or more wirings 60 include a wiring 60 having one end bonded to the upper surface 21A of the semiconductor laser element 20 and the other end bonded to the wiring portion 12A. The one or more wirings 60 include a wiring 60 having one end bonded to the upper surface 21A of the semiconductor laser element 20 and the other end bonded to the second wiring portion 12A2. A plurality of wirings 60 are bonded to the upper surface 21A of one semiconductor laser element 20.

[0136] When the number of semiconductor laser elements 20 included in the light emitting device 1 is one, the internal volume of the internal space of the package 10 is preferably 0.357 mm 3 Above and 2mm 3 As a result, the light emitting device 1 can be miniaturized.

[0137] When the number of semiconductor laser elements 20 included in the light emitting device 1 is two, the internal volume of the internal space of the package 10 is preferably 0.6 mm 3 Above and 4mm 3 As a result, the light emitting device 1 can be miniaturized.

[0138] The light emitting device 1 of the first embodiment has been described above, but in the light emitting device 1, the member that blocks the through hole 11H is not limited to the member (metal member 15) whose main material is metal. By using the first metal member 151 and the second metal member 152, the semiconductor laser element 20 can be connected to each other. However, from the perspective of sealing the package 10, any sealing member that has a thickness greater than a predetermined value and can block gas leakage can be used instead of the metal member 15.

[0139] <Second embodiment>

[0140] A light emitting device 2 according to a second embodiment will be described. Figure 1 , Figure 2 , Figure 6 as well as Figures 9 to 12 This is a diagram for explaining an exemplary embodiment of the light emitting device 2 . Figure 1 It is a perspective view of the light emitting device 2 . Figure 2 is a side view of the light emitting device 2. Figure 6 is a bottom view of package 10A. Fig. 9 yes Figure 1 A cross-sectional view of the light emitting device 2 taken along the section line IX-IX. Fig.10 yes Figure 6 A cross-sectional view of the package 10A taken along the section line XX. Fig.11It is a perspective view showing the state inside the package 10A of the light emitting device 2 . Fig.12 is with Fig.11 A top view of the light emitting device 2 in the same state.

[0141] In the description of the light emitting device 1 and each component of the first embodiment, the light emitting device 2 Figure 1 , Figure 2 , Figure 6 as well as Figures 9 to 12 All contents except those that may be considered contradictory in the drawings of FIG. 1 are also applicable to the description of the light emitting device 2. In order to avoid repetition, all contents that are not contradictory will not be described again.

[0142] The light emitting device 2 includes a plurality of components including a package 10A, one or more semiconductor laser elements 20 , one or more reflecting members 40 , and one or more wirings 60 .

[0143] (Package 10A)

[0144] In the package 10A, the third metal member 153 is provided on the insulating member 11M so as to cover the first through hole 11H1. In other words, the third metal member 153 overlaps the first through hole 11H1 in a plan view. By providing the metal members 15 on the upper and lower surfaces of the insulating member 11M, the sealing property of the internal space can be improved.

[0145] In the package 10A, since the first through hole 11H1 is covered by the third metal member 153 , the first wiring portion 12A1 provided so as to cover the first through hole 11H is not necessary in the package 10A.

[0146] (Light emitting device 2)

[0147] In the light emitting device 2, the third metal component 153 is provided with the semiconductor laser element 20 on its upper surface 11A and seals the first through hole 11H1. In addition, the semiconductor laser element 20 and the first through hole 11H1 do not overlap when viewed from above. Thus, the third metal component 153 can be extended in the length direction of the semiconductor laser element 20, and heat dissipation can be improved.

[0148] <Third embodiment>

[0149] A light emitting device 3 according to a third embodiment will be described. Figure 1 , Figure 2 , Figure 6 , Fig. 9 , Fig.10 , Fig.13 as well as Fig.14 It is a diagram for explaining an exemplary embodiment of the light emitting device 3 . Figure 1It is a perspective view of the light emitting device 3 . Figure 2 It is a side view of the light emitting device 3. Figure 6 is a bottom view of the package 10B. Fig. 9 yes Figure 1 A cross-sectional view of the light emitting device 3 taken along the section line IX-IX. Fig.10 yes Figure 6 A cross-sectional view of the package 10A taken along the section line XX. Fig.13 It is a perspective view showing the state inside the package 10B of the light emitting device 3 . Fig.14 is with Fig.13 A top view of the light emitting device 3 in the same state.

[0150] In the description of the light emitting device 1 of the first embodiment, the light emitting device 2 of the second embodiment, and each component, the light emitting device 3 is described. Figure 1 , Figure 2 , Figure 6 as well as Figures 9 to 12 All contents except those which may be considered contradictory in the drawings of FIG. 1 are also applicable to the description of the light emitting device 3. In order to avoid repetition, all contents which are not contradictory will not be described here.

[0151] The light emitting device 3 includes a plurality of components including a package 10B, one or more semiconductor laser elements 20 , one or more reflecting members 40 , and one or more wirings 60 .

[0152] (Package 10B)

[0153] In the package 10B, the fourth metal component 154 is included in one or more metal components 15. The fourth metal component 154 is provided on the insulating component 11M in a manner covering the second through hole 11H2. The fourth metal component 154 is provided on the surface opposite to the surface provided with the second metal component 152. For example, the second metal component 152 is provided on the lower surface 11B of the insulating component 11M in a manner covering the second through hole 11H2, and the fourth metal component 154 is provided on the upper surface 11A of the insulating component 11M in a manner covering the second through hole 11H2. By providing the metal components 15 on the upper and lower surfaces of the insulating component 11M, the sealing of the internal space can be improved.

[0154] In the package 10B, since the second through hole 11H2 is covered by the fourth metal member 154 , the second wiring portion 12A2 provided so as to cover the second through hole 11H is not necessary in the package 10B.

[0155] All through holes 11H from the upper surface 11A to the lower surface 11B of the base 11 are covered by the metal member 15 on both the upper surface 11A side and the lower surface 11B side. Thus, the first metal member 151 and the second metal member 152 are included. All metal members 15 provided on the lower surface 11B of the base 11 can be provided thinner, and the package can be miniaturized.

[0156] (Light emitting device 3)

[0157] In the light emitting device 3, one or more wirings 60 include wirings 60 having one end bonded to the upper surface 21A of the semiconductor laser element 20 and the other end bonded to the fourth metal member 154. The one or more wirings 60 bonded to the fourth metal member 154 do not overlap with the second through hole 11H2 when viewed from above. In the light emitting device 3, by providing the fourth metal member 154, the length of the wiring 60 can be shortened, and the electrical load on the wiring 60 can be reduced.

[0158] The various embodiments of the present invention have been described above, but the light-emitting device of the present invention is not strictly limited to the light-emitting device of each embodiment. That is, the present invention is not impossible to implement as long as it is not limited to the appearance and structure of the light-emitting device disclosed by each embodiment. The present invention does not necessarily have to have all the constituent elements to be applicable. For example, in the case where a part of the constituent elements of the light-emitting device disclosed by the embodiment is not recorded in the claims, the freedom of design by those skilled in the art to replace, omit, deform the shape, change the material, etc. of a part of the constituent elements is allowed, and the application of the invention recorded in the claims is determined on this basis.

[0159] Industrial Applicability

[0160] The light-emitting device described in the embodiment can be used in a head-mounted display. That is, the head-mounted display can be said to be a use form of the present invention. It should be noted that the present invention is not limited to this, and can be used in various use forms such as a projector, an illumination light, an exposure light, a vehicle headlight, and a backlight of other displays.

Claims

1. A light emitting device comprising a package and a semiconductor laser element, wherein the package comprises a frame, a cover, a base having an upper surface and a lower surface and having a thickness of 100 μm to 500 μm, and a first metal member provided on the upper surface or the lower surface of the base and having a thickness of 10 μm to 150 μm. The base body comprises: an insulating member having the upper surface and the lower surface and provided with a first through hole extending from the upper surface to the lower surface; and a first conductive member provided in the first through hole; The first metal component is disposed on the upper surface or the lower surface of the insulating component in a manner covering the first through hole. The semiconductor laser element is arranged in a sealed space inside the package and is electrically connected to the first conductive member and the first metal member.

2. The light emitting device according to claim 1, further comprising a second metal member having a thickness of not less than 10 μm and not more than 150 μm, The insulating component is provided with a second through hole extending from the upper surface to the lower surface. The substrate has a second conductive component disposed in the second through hole, The second metal component is provided on the upper surface or the lower surface of the insulating component in a manner covering the second through hole. The semiconductor laser element is electrically connected to the second conductive member and the second metal member.

3. The light emitting device according to claim 2, The first metal member and the second metal member are provided on the same surface of the insulating member.

4. The light emitting device according to claim 2 or 3, The insulating member comprises: a plurality of metal parts, which are all metal parts with a thickness of 10 μm or more and 150 μm or less and are provided on the upper surface or the lower surface of the insulating member, and at least include the first metal part and the second metal part; a plurality of through holes, which are all through holes from the upper surface to the lower surface, and at least include the first through hole and the second through hole, Each of the plurality of through holes is covered by one of the plurality of metal parts.

5. The light emitting device according to any one of claims 1 to 4, further comprising a third metal member having a thickness of not less than 10 μm and not more than 150 μm, The first metal component is disposed on the lower surface of the insulating component, The third metal component does not cover the first through hole but is disposed on the upper surface of the insulating component. In a plan view, a portion of the first metal component overlaps a portion of the third metal component.

6. The light emitting device according to any one of claims 2 to 4, The invention further comprises: a third metal member having a thickness of 10 μm or more and 150 μm or less; and a fourth metal member having a thickness of 10 μm or more and 150 μm or less; The first metal component is disposed on the lower surface of the insulating component, The third metal component is provided on the upper surface of the insulating component in a manner covering the first through hole. The second metal component is disposed on the lower surface of the insulating component, The fourth metal member is provided on the upper surface of the insulating member so as to cover the second through hole.

7. The light emitting device according to claim 5 or 6, The semiconductor laser element is disposed on the upper surface of the third metal member.

8. The light emitting device according to any one of claims 1 to 7, A reflecting member is further provided. The reflecting member is disposed in an internal space of the package and reflects light emitted from the semiconductor laser element.

9. The light emitting device according to any one of claims 5 to 7, The thickness of the insulating member is greater than the thickness of the first metal member and is equal to or greater than the sum of the thickness of the first metal member and the thickness of the third metal member.

10. A light emitting device comprising a package and a semiconductor laser element, wherein the package comprises a frame, a cover, a base having an upper surface and a lower surface and a thickness from the upper surface to the lower surface of not less than 100 μm and not more than 500 μm, and a sealing member provided on the upper surface or the lower surface of the base and having a thickness of not less than 10 μm and not more than 150 μm, The base body comprises: an insulating member having the upper surface and the lower surface and provided with a first through hole extending from the upper surface to the lower surface; and a first conductive member provided in the first through hole; The sealing member is provided on the upper surface or the lower surface of the insulating member so as to cover the first through hole. The semiconductor laser element is arranged in a sealed space inside the package and is electrically connected to the first conductive member.

11. The light emitting device according to any one of claims 1 to 10, The internal volume of the package is 0.357 mm 3 Above and 12.96mm 3 the following, The internal space of the package is a sealed space that satisfies the following conditions: when the helium pressure [Pa] of the helium is set to 0.5 MPa, the pressurization time [h] of the helium is set to 1 h, and the standing time [h] is set to within 0.1 h, the actual leakage amount of helium [Pa·m 3 / sec] is less than 1.0×10 -7 Pa·m 3 / sec.

12. The light emitting device according to any one of claims 1 to 10, The internal volume of the package is 0.357 mm 3 Above and 12.96mm 3 the following, The internal space of the package is a sealed space that satisfies the following conditions: when the helium pressure [Pa] of the helium is set to 0.5 MPa, the pressurization time [h] of the helium is set to 1 h, and the standing time [h] is set to within 5 h, the actual leakage amount of helium [Pa·m 3 / sec] is less than 1.0×10 -9 Pa·m 3 / sec.

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