Semiconductor structure and manufacturing method thereof

By forming a resistor between metal wires in a semiconductor structure and covering the substrate and side walls between the wires, the problem of easy cutting of thin-film resistors during the formation of contact holes is solved, improving product yields and simplifying the process.

CN119650545APending Publication Date: 2025-03-18HANGZHOU FULLSEMI SEMICON CO LTD
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Patent Information

Application Number
CN202411805310.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-09
Publication Date
2025-03-18

AI Technical Summary

Technical Problem

Existing thin film resistors are prone to cause penetration problems during the formation of contact holes, which reduces electrical properties and leads to process pollution, affecting the yield of semiconductor products.

Method used

In the semiconductor structure, the resistor is formed between any two adjacent metal wires arranged apart in the first direction, and the resistor covers the substrate and side walls between the wires, exposing a part of the top surface of the metal wires, thereby avoiding contact between the contact holes and the resistor.

Benefits of technology

It effectively avoids resistor etching problems, prevents process pollution and resistor performance failure, improves semiconductor product yield, simplifies process steps, and reduces production costs.

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Abstract

The invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate, a conductive layer, and a resistor. The conductive layer is located above the substrate; the conductive layer comprises a plurality of metal wires which are arranged at intervals along a first direction; the resistor is located between any two adjacent metal wires; wherein the resistor covers the part, between any two adjacent metal wires, of the substrate and the side walls of any two adjacent metal wires, and at least part of the top surfaces of the metal wires are exposed. According to the invention, the process steps are effectively simplified, the problem of etching penetration of the resistor is avoided, and the yield of semiconductor products is improved while the production cost is reduced.
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