Metal oxide resist for EUV patterning and method for developing same

By using selective gas and developing gas to treat the metal oxide resist during extreme UV patterning, the problem of insufficient development selectivity of inorganic resist in extreme UV patterning is solved, and more efficient etching and pattern transfer is achieved.

CN119654598APending Publication Date: 2025-03-18TOKYO ELECTRON LTD
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Patent Information

Application Number
CN202380046446.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2022-08-03
Filing Date
2023-07-21
Publication Date
2025-03-18

AI Technical Summary

Technical Problem

Inorganic-based resists have challenges in processing and developing during extreme UV patterning, making it difficult to achieve high selectivity and efficient etching.

Method used

Selectivity between the exposed portion of the resist and the unexposed portion is increased by receiving a substrate with exposed metal oxide resist in the processing chamber and allowing the selective gas and the developing gas to flow through the resist, respectively or simultaneously, respectively, to increase the selectivity of the development process.

Benefits of technology

The selectivity of the development process is achieved, allowing thicker resist to be left after development, improving the mask budget for pattern transfer, reducing the developer amount and exposure time, thereby increasing process yield.

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Abstract

A method for processing a substrate includes forming a metal oxide resist on the substrate, exposing the metal oxide resist to an extreme ultraviolet light pattern, and flowing a selective gas over the metal oxide resist. The selective gas increases the selectivity of the exposed metal oxide resist to a developing gas. The method further includes flowing the developing gas over the metal oxide resist in the processing chamber, and etching the substrate using a remaining portion of the metal oxide resist as a mask.
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