Plasma processing apparatus and electrostatic chuck

By designing a plasma processing device including an electrostatic suction cup, substrate bias electrode and edge ring bias electrode, the ion incident angle is controlled by using RF signals and voltage pulse sequences, the problem of difficult control of the ion incident angle in plasma processing is solved, and the stability and consistency of the processing results are achieved.

CN119678244APending Publication Date: 2025-03-21TOKYO ELECTRON LTD
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Patent Information

Application Number
CN202380058464.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2022-08-16
Filing Date
2023-08-04
Publication Date
2025-03-21

AI Technical Summary

Technical Problem

In plasma processing, it is difficult to control the incident angle of ions at the edge of the substrate, and the plasma processing result is prone to change when the ion incident angle is controlled.

Method used

A plasma processing device is designed, including a chamber, a substrate support, a substrate bias electrode and an edge ring bias electrode. By configuring the electrostatic suction cup and edge ring, an RF generator, a first voltage pulse generator and a second voltage pulse generator are used to generate an RF signal and voltage pulse sequence, and the potential difference between the substrate and edge ring is controlled to stabilize the ion incident angle.

Benefits of technology

Effective control of the ion incident angle at the edge of the substrate in plasma processing is achieved, and the changes in plasma processing results are suppressed when controlling the ion incident angle are controlled, and the stability and consistency of the processing are improved.

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Abstract

The present invention provides a technique capable of controlling an incident angle of ions at an edge portion of a substrate in plasma processing, and capable of suppressing variations in plasma processing results when the incident angle of ions is controlled. The plasma processing apparatus includes: a chamber; the substrate supporting part is configured in the chamber, the substrate supporting part is provided with a conductive base, an electrostatic chuck, an edge ring, a substrate bias electrode and an edge ring bias electrode, and the edge ring bias electrode extends to the edge part of the substrate supporting surface in a plan view and is provided with an annular overlapping part partially overlapped with the substrate bias electrode; the annular overlapping part has a radial width of 9 mm to 11 mm; an upper electrode; an RF generator; a first voltage pulse generator electrically connected to the substrate bias electrode and configured to be capable of generating a sequence of first voltage pulses; and a second voltage pulse generator electrically connected to the edge ring bias electrode and configured to be capable of generating a sequence of second voltage pulses.
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