High-performance flexible chip on film

By chemically grafting and crosslinking the dextran layer on the surface of the flexible substrate and loading the silver particle layer, the problem of the reduced conductivity of the flexible crystal-covered film after multiple bends is solved, and more stable signal transmission is achieved.

CN119684659AActive Publication Date: 2025-03-25DONGGUAN ZHONGJIA PRINTING CO LTD
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Patent Information

Application Number
CN202411850362.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-16
Publication Date
2025-03-25
Estimated Expiration
2044-12-16

AI Technical Summary

Technical Problem

After multiple bents of the existing flexible crystal-covered thin film, the conductive properties of the conductive silver layer decrease, resulting in poor signal transmission stability, limiting its application in flexible electronic devices.

Method used

By chemically grafting the dextran layer on the surface of the flexible substrate and crosslinking, a three-dimensional porous network structure is formed to stabilize the loaded silver particle layer, and when bending, good contact between the silver particles is maintained through the elastic buffering effect of crosslinked dextran.

Benefits of technology

It effectively maintains the conductive properties of the flexible crystal-covered film after multiple bends, reduces the gap between silver particles, and improves the stability of signal transmission.

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Abstract

The invention relates to the technical field of chip on films, and discloses a high-performance flexible chip on film which is prepared by the following steps: S1, performing surface modification on a flexible substrate by using a silane coupling agent containing an epoxy group, and then grafting glucan to the surface of the flexible substrate; s2, cross-linking the glucan on the surface of the flexible substrate by using a cross-linking agent to obtain a first modified flexible substrate; s3, the obtained first flexible modified substrate is soaked in a silver ion solution for a reaction, then silver ions on the surface of the first modified flexible substrate are reduced into silver, and a second modified flexible substrate is obtained; s4, the obtained second flexible modified substrate is electroplated, so that a silver layer is electroplated on the surface of the second flexible substrate, and a third modified flexible substrate is obtained; and S5, sequentially carrying out a photoetching process and an etching process on the obtained third modified flexible substrate to obtain the flexible chip-on-film. The stability of the flexible chip on film can be improved.
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