N-type magnesium-antimony-bismuth-based thermoelectric thin film material and preparation method thereof

Through the multi-target magnetron co-sputtering technology, the target parameters are independently regulated, and the composition of magnesium-antimony-bismuth-based thermoelectric film materials can be quickly adjusted and the Mg-enriched deposition environment is achieved, and the problems of poor film composition stability and performance are solved, and n-type magnesium-antimony-bismuth-based thermoelectric film materials with excellent thermoelectric properties are prepared.

CN119685769APending Publication Date: 2025-03-25INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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Patent Information

Application Number
CN202411708862.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-27
Publication Date
2025-03-25

AI Technical Summary

Technical Problem

The prior art is difficult to ensure the stability of the composition of magnesium-antimony-bismuth-based thermoelectric film materials, resulting in poor performance, especially in the research of n-type thermoelectric film materials.

Method used

Multi-target magnetron co-sputtering technology is adopted to independently regulate the parameters of each target, achieve rapid adjustment of film components, and maintain a Mg-rich deposition environment during the sputtering process to ensure the n-type conductivity and stability of the film.

Benefits of technology

The preparation of n-type magnesium antimony bismuth-based thermoelectric film material has been achieved. The film has stable composition and excellent thermoelectric properties, high Seebeck coefficient, low thermal conductivity, and high thermoelectric superiority.

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Abstract

The chemical formula of the n-type magnesium-antimony-bismuth-based thermoelectric thin film material is Mg < 3.15 > Bi < 1.5-x > Sb < 0.5 > Te < x >, and the value of x is 0.03, 0.04, 0.05 or 0.06; multi-target co-sputtering is adopted during thin film deposition, a deposition substrate of the thin film is a high-purity quartz substrate, the thin film grows in a columnar crystal mode, the grain size ranges from 10 nm to 50 nm, and the thickness of the thin film is 1 micron. The n-type magnesium-antimony-bismuth-based thermoelectric thin film material prepared by the invention is simple in preparation method, low in cost and suitable for large-scale manufacturing. The n-type antimony-bismuth-based thermoelectric thin film material prepared by the invention is high in thermoelectric performance, and a material basis is provided for development of miniature and flexible thin film thermoelectric devices.
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