Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and recording medium
By performing multiple cycles on the substrate, a film is preferred to form on the first surface of the substrate by utilizing the difference in gas supply time and partial pressure, a film is preferred to form a film on the first surface of the substrate, which solves the problem of uneven film formation in the prior art, and achieves the effect of film thickness uniformity and non-conductive substance protection.
CN119685795APending Publication Date: 2025-03-25KOKUSAI DENKI KK
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Patent Information
- Application Number
- CN202410966687.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-09-22
- Filing Date
- 2024-07-18
- Publication Date
- 2025-03-25
AI Technical Summary
Technical Problem
The prior art is difficult to form a film on one surface of the substrate preferentially over the other surfaces.
Method used
By performing multiple cycles on the substrate, the material X containing the first element is preferentially formed on the first surface by utilizing the difference in supply time and partial pressure of the first gas and the first reaction gas, and the formation and thickness of the film are controlled by removing the portion of the material X.
Benefits of technology
The film is formed on one surface of the substrate more preferentially than the other surfaces, improving the uniformity of the film thickness, and suppressing damage to non-conductive substances.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides a substrate processing method, a method of manufacturing a semiconductor device, a substrate processing apparatus, and a recording medium. The technology can form a film on a certain surface of a substrate preferentially than other surfaces. Process (a1) for non-simultaneously supplying a first gas containing a first element to a substrate having a first surface and a second surface each comprising different substances and forming a substance (X) containing the first element on at least part of the substrate, and (a2) A first cycle of a step of supplying a first reaction gas that reacts with a substance X to a substrate is performed a first number of times, and a film containing a first element is formed on at least a portion of the substrate; the incubation time of the first gas on the second surface is longer than the incubation time of the first gas on the first surface; furthermore, in (a1), at least a part of the substance X formed on the substrate is removed.
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