Electrostatic chuck, plasma processing method, and plasma processing apparatus
By providing a temperature holding layer composed of phase change material in the base plate of the electrostatic chuck, the problem of difficult substrate temperature control during plasma processing is solved, and the stability of substrate temperature is achieved.
Patent Information
- Application Number
- CN202311647574.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-09-22
- Filing Date
- 2023-12-04
- Publication Date
- 2025-03-25
AI Technical Summary
During semiconductor manufacturing, the temperature of the substrate is prone to drastically change due to performance deviations of refrigerant and heater during plasma processing, making it difficult to effectively control the temperature.
An electrostatic chuck is designed, including a positioning disk and a bottom plate. The positioning disk has a built-in heater, a cooling flow path is formed in the bottom plate, and a temperature holding layer composed of phase change material is provided inside the bottom plate to absorb or release heat and stabilize the substrate temperature.
By absorbing and releasing heat from the phase change material, the drastic temperature changes of the substrate are effectively prevented and the temperature stability of the substrate is ensured during plasma treatment.