Ink jet patterning method
By printing narrow line width dams and fill materials on the silicon wafer substrate, combined with metal layer deposition and cleaning etching, the problem of insufficient control of line width and uncontrollable edge morphology in the existing inkjet printing technology is solved, and higher material utilization and lower cost are achieved.
Patent Information
- Application Number
- CN202311281123.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-28
- Publication Date
- 2025-03-28
AI Technical Summary
The existing inkjet printing technology has problems such as insufficient control of metal deposition line width, uncontrollable edge morphology, low material utilization and high cost in the fields of photovoltaic and semiconductors.
Using an inkjet patterning method, the dam of the dam with a narrow line width is first printed on the silicon wafer substrate, and the second sacrificial layer material is filled in the dam frame, followed by metal layer deposition and cleaning etching, and finally the dam and fill area sacrificial layer are removed.
The controllability of the metal deposition line width is achieved, the morphology of the metal deposition layer is controllable, which reduces the invalid loss of the material, saves ink material, and simplifies the difficulty of printing on the nozzle selection and filling area.