Etching equipment and etching method

By introducing rotating components into the etching device, changing the relative position of the wafer and the etching gas, the problem of poor etching uniformity on the wafer surface is solved and higher processing quality is achieved.

CN119725162AActive Publication Date: 2025-03-28ZHEJIANG ICSPROUT SEMICONDUCTOR CO LTD
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Patent Information

Application Number
CN202411823083.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-10
Publication Date
2025-03-28
Estimated Expiration
2044-12-10

AI Technical Summary

Technical Problem

In the gas etching process, the etching uniformity of the wafer surface is poor, resulting in low processing quality.

Method used

An etching device is designed, including a processing chamber and a rotating assembly. The rotating assembly drives the carrier to rotate vertically, changing the relative position between different positions of the wafer and the etching gas, and ensuring that the amount of etching gas received at each position is basically the same.

Benefits of technology

Through the design of the rotating component, the uniformity of wafer etching is improved, the differences in etching gases at different positions on the wafer surface are reduced, and the processing quality of the wafer is improved.

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Abstract

The embodiment of the invention provides etching equipment and an etching method, and the equipment comprises a processing chamber which is internally provided with a bearing part for bearing a wafer; the rotating assembly is arranged in the processing cavity, is connected with the bearing part and drives the bearing part to rotate; wherein the direction for driving the bearing part to rotate is perpendicular to the surface of the bearing part. By adopting the technical scheme, the wafer etching uniformity can be improved, and the wafer processing quality is further improved.
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