Substrate processing apparatus
By designing a dielectric layer and a heater control substrate in the Taichung, and introducing refrigerant using the inlet port, the problem of poor operation stability of the Taichung substrate is solved, and the processing effect of the plasma processing device is improved.
Patent Information
- Application Number
- CN202411900700.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2019-08-22
- Filing Date
- 2020-08-14
- Publication Date
- 2025-03-28
AI Technical Summary
The operation stability of the existing Taichung substrate is poor, which affects the processing effect of the plasma processing device.
A mounting table is designed, which includes a base, a dielectric layer and a heater control substrate. The dielectric layer is provided with a mounting surface on the first side of the base and a plurality of heaters are built into it to adjust the substrate temperature. The heater control substrate is arranged in the storage space for driving a plurality of heaters and introducing refrigerant through the inlet port to cool the system.
By improving the operation stability of the substrate in the mounting table, the processing effect of the plasma processing device is enhanced, ensuring the temperature and position of the substrate during the processing process.