Synchronous rectification control device and method and flyback switching power supply
By introducing a secondary opening mechanism into the secondary side control circuit of the flyback switching power supply, the loss and temperature rise of the primary side MOS tube when it is turned on is reduced, and the problem of high opening loss of the primary side MOS tube in conventional QR mode is solved, and the system efficiency is improved.
CN119727410AActive Publication Date: 2025-03-28WUXI CHIPOWN MICROELECTRONICS
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Patent Information
- Application Number
- CN202510206765.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-25
- Publication Date
- 2025-03-28
- Estimated Expiration
- 2045-02-25
AI Technical Summary
Technical Problem
In the prior art, the opening loss of the primary MOS tube when the conventional QR mode is turned on is high, resulting in the temperature rise of the primary MOS tube.
Method used
By introducing a secondary opening mechanism in the secondary side control circuit, an additional secondary MOS tube is turned on in the resonant phase after the primary side inductor excitation is completed, thereby reducing the leakage voltage before the primary side MOS tube is turned on again.
Benefits of technology
It effectively reduces the opening loss and temperature rise of the primary MOS tube and improves the system efficiency.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention discloses a synchronous rectification control device and method and a flyback switching power supply. The synchronous rectification control device comprises a primary side MOS tube, a transformer, a secondary side MOS tube, a primary side control chip and a secondary side control circuit, the primary side control chip is used for controlling the primary side MOS tube to be switched on at a valley bottom position, exciting a primary side inductor of the transformer to enable primary side current to rise, and then controlling the primary side MOS tube to be switched off to enable excitation of the primary side inductor to be finished; and the secondary side control circuit is used for controlling the secondary side MOS tube to be switched on for the first time in the secondary side demagnetization process of the transformer after the primary side inductor excitation is finished, and controlling the secondary side MOS tube to be switched on for the second time in the resonance stage after the demagnetization is finished, so that the drain terminal voltage of the primary side MOS tube before the primary side MOS tube is switched on again is reduced. By using the scheme of the invention, the source-drain voltage of the primary side MOS tube at the turn-on moment can be reduced, the turn-on loss is reduced, and the temperature rise of the primary side MOS tube is reduced.
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