Display panel and display device

Abstract

The present application provides a display panel and a display device, which display panel includes an array substrate and a light-emitting device layer, the light-emitting device layer including an anode layer, a first light-emitting device layer, a second light-emitting device layer and a cathode layer. By reducing the thickness of the first electron blocking unit or the third electron blocking unit, and reducing the thickness of the second electron blocking unit or the fourth electron blocking unit, the number of mask plates can be reduced while avoiding the relative position offset between different film layers formed by etching, thereby ensuring the consistency and stability of the microcavity structure in the light-emitting device layer, thereby improving the light extraction efficiency of the light-emitting device in the display panel.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] With the development of flat-panel display technology, the requirements for display panel stability have gradually increased. In recent years, organic light-emitting diode (OLED) display panels have experienced rapid development around the world, and OLED display technology has also been continuously improved.

[0003] With the advancement of OLED display technology and process improvements, the application of OLED displays is gradually expanding to medium and large sizes. In these applications, the stability of the display panels is required to be higher, especially in terms of lifespan and temperature stability. In this environment, the demand for stacked OLED devices is increasing, and major display manufacturers are investing resources in technology and product development, launching stacked OLED devices with various structures. Currently, mainstream stacked OLED devices have complex structures and require a large number of masks in the manufacturing process. Due to the limited precision of the manufacturing process, when the mask is replaced during etching, the positioning of the mask will deviate, and the film layer position will also shift accordingly. This can alter the microcavity structure of the stacked OLED device and reduce the luminous efficiency of the stacked OLED device.

[0004] Therefore, it is necessary to provide a display panel and a display device to improve this defect. Summary of the Invention

[0005] Embodiments of the present application provide a display panel and a display device, which can improve the luminous efficiency of light-emitting devices in the display panel.

[0006] An embodiment of the present application provides a display panel, including an array substrate and a light-emitting device layer, wherein the light-emitting device layer is provided on the array substrate, and the light-emitting device layer includes:

[0007] an anode layer, disposed on the array substrate;

[0008] a first light-emitting device layer, disposed on the anode layer, comprising a first electron blocking layer and a first light-emitting layer, wherein the first electron blocking layer is disposed on the anode layer, and comprises a first electron blocking unit, a second electron blocking unit, and a fifth electron blocking unit; a first light-emitting layer is disposed on the first electron blocking layer, and comprises a first light-emitting unit, a second light-emitting unit, and a fifth light-emitting unit, wherein the first light-emitting unit is disposed on the first electron blocking unit, the second light-emitting unit is disposed on the second electron blocking unit, and the fifth light-emitting unit is disposed on the fifth electron blocking unit;

[0009] a second light-emitting device layer, disposed on the first light-emitting device layer, the second light-emitting device layer including a second electron blocking layer and a second light-emitting layer, the second electron blocking layer being disposed on the first light-emitting layer, the second electron blocking layer including a third electron blocking unit, a fourth electron blocking unit and a sixth electron blocking unit, the third electron blocking unit being disposed on the first light-emitting unit, the fourth electron blocking unit being disposed on the second light-emitting unit; the second light-emitting layer being disposed on the second electron blocking layer, the second light-emitting layer including a third light-emitting unit, a fourth light-emitting unit and a sixth light-emitting unit, the third light-emitting unit being disposed on the third electron blocking unit, the fourth light-emitting unit being disposed on the fourth electron blocking unit, and the sixth light-emitting unit being disposed on the sixth electron blocking unit;

[0010] a cathode layer, disposed on the second light-emitting device layer;

[0011] Among them, the ratio R1 of the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfies: 4≤R1≤6; the ratio R2 of the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfies: 14≤R2≤16.

[0012] Optionally, the edge of the first light-emitting unit is flush with the edge of the first electron blocking unit, the edge of the second light-emitting unit is flush with the edge of the second electron blocking unit, the edge of the third light-emitting unit is flush with the edge of the third electron blocking unit, and the edge of the fourth light-emitting unit is flush with the edge of the fourth electron blocking unit.

[0013] Optionally, an edge of the fifth light-emitting unit is flush with an edge of the fifth electron blocking unit, and an edge of the sixth light-emitting unit is flush with an edge of the sixth electron blocking unit.

[0014] Optionally, the thickness of one of the first electron blocking unit and the third electron blocking unit is greater than or equal to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit, and the thickness of one of the second electron blocking unit and the fourth electron blocking unit is greater than the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit.

[0015] Optionally, the ratio R3 of the thickness of the first electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0≤R3≤1; the ratio R3 of the thickness of the third electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0≤R4≤1, R3+R4=1.

[0016] Optionally, a ratio R3 of the thickness of the first electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.17≤R3≤0.19, and a ratio R3 of the thickness of the other of the third electron blocking units to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.81≤R4≤0.83;

[0017] Alternatively, a ratio R3 of the thickness of the first electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.81≤R3≤0.83, and a ratio R4 of the thickness of the third electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.17≤R4≤0.19.

[0018] Optionally, the ratio R5 of the thickness of the second electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 1≤R5≤1; the ratio R6 of the thickness of the fourth electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0≤R6≤1, R5+R6=1.

[0019] Optionally, a ratio R5 of the thickness of the second electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.05≤R5≤0.07; a ratio R6 of the thickness of the fourth electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.93≤R6≤0.95;

[0020] Alternatively, a ratio R5 of the thickness of the second electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.93≤R5≤0.95; a ratio R6 of the thickness of the fourth electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.05≤R6≤0.07.

[0021] Optionally, the sum of the thicknesses of the fifth electron blocking unit and the sixth electron blocking unit is greater than or equal to 8 nanometers and less than or equal to 12 nanometers.

[0022] Optionally, the thickness of the fifth electron blocking unit is greater than or equal to 3 nanometers and less than or equal to 7 nanometers, and the thickness of the sixth electron blocking unit is greater than or equal to 3 nanometers and less than or equal to 7 nanometers.

[0023] Optionally, the fifth electron blocking unit and the sixth electron blocking unit have the same thickness.

[0024] Optionally, the first light emitting unit and the third light emitting unit are configured to emit green light, the second light emitting unit and the fourth light emitting unit are configured to emit red light, and the fifth light emitting unit and the sixth light emitting unit are configured to emit blue light.

[0025] Optionally, the first light-emitting device layer further includes:

[0026] a hole injection layer, disposed on the anode layer;

[0027] a first hole transport layer, disposed on the hole injection layer, and a first electron blocking layer disposed on the first hole transport layer;

[0028] a first hole blocking layer, disposed on the first light-emitting layer;

[0029] The first electron transport layer is disposed on the first hole blocking layer.

[0030] Optionally, the first light-emitting device layer further includes an N-type semiconductor layer, wherein the N-type semiconductor layer is disposed on the first electron transport layer, and the N-type semiconductor layer is configured to provide electrons to the first light-emitting device layer.

[0031] Optionally, the second light-emitting device layer further includes:

[0032] a second hole transport layer, disposed on the first light-emitting device layer, and a second electron blocking layer disposed on the second hole transport layer;

[0033] a second hole blocking layer, disposed on the second light-emitting layer;

[0034] a second electron transport layer, disposed on the second hole blocking layer;

[0035] The electron injection layer is disposed on the second electron transport layer, and the cathode layer is disposed on the electron injection layer.

[0036] Optionally, the second light-emitting device layer further includes a P-type semiconductor layer, which is disposed on a surface of the second hole transport layer away from the second electron blocking layer, and is configured to provide holes to the second light-emitting device layer.

[0037] An embodiment of the present application further provides a display device, which includes the display panel as described above.

[0038] Beneficial effects of the embodiments of the present application: The embodiments of the present application provide a display panel and a display device, the display panel includes an array substrate and a light-emitting device layer, the light-emitting device layer includes an anode layer, a first light-emitting device layer, a second light-emitting device layer and a cathode layer, by reducing the thickness of the first electron blocking unit or the third electron blocking unit, and making the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit, and the ratio R1 of the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfy: 4≤R1≤6, when the first electron blocking unit or the second electron blocking unit with a smaller thickness is not needed to be evaporated, a baffle can be used to block the first electron blocking unit or the second electron blocking unit with a smaller thickness. Since the thickness of the first electron blocking unit or the second electron blocking unit is small, the failure time of the baffle can be extended so that the first electron blocking unit or the third electron blocking unit with a smaller thickness can be separated from the first electron blocking unit or the third electron blocking unit. The corresponding first light-emitting unit or third light-emitting unit is formed by etching using the same mask plate, which not only reduces the number of mask plates, but also avoids the relative position offset between the first electron blocking unit or third electron blocking unit formed by etching and the corresponding first light-emitting unit or third light-emitting unit. Similarly, by reducing the thickness of the second electron blocking unit or the fourth electron blocking unit, and making the ratio R2 of the sum of the thickness of the second electron blocking unit and the fourth electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfy: 14≤R2≤16, it is also possible to reduce the number of mask plates while avoiding the relative position offset between the second electron blocking unit or fourth electron blocking unit formed by etching and the corresponding second light-emitting unit and fourth light-emitting unit, thereby ensuring the consistency and stability of the microcavity structure in the light-emitting device layer, thereby improving the light extraction efficiency of the light-emitting device in the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 A schematic structural diagram of a first display panel provided in an embodiment of the present application;

[0040] Figure 2 A schematic structural diagram of a second display panel provided in an embodiment of the present application;

[0041] Figure 3 A schematic structural diagram of a third display panel provided in an embodiment of the present application;

[0042] Figure 4 A schematic structural diagram of a fourth display panel provided in an embodiment of the present application;

[0043] Figure 5 A schematic structural diagram of a fifth display panel provided in an embodiment of the present application;

[0044] Figure 6 A schematic structural diagram of a sixth display panel provided in an embodiment of the present application;

[0045] Figure 7 A schematic structural diagram of a seventh display panel provided in an embodiment of the present application;

[0046] Figure 8 A schematic structural diagram of an eighth display panel provided in an embodiment of the present application;

[0047] Figure 9 This is a schematic structural diagram of a display device according to an embodiment of the present application. DETAILED DESCRIPTION

[0048] The following descriptions of the embodiments refer to the accompanying figures to illustrate specific embodiments that may be implemented in this application. Directional terms used in this application, such as [upper], [lower], [front], [back], [left], [right], [inner], [outer], and [side], refer only to the directions in the accompanying figures. Therefore, the directional terms used are intended to illustrate and facilitate understanding of this application and are not intended to limit this application. In the figures, similarly structured elements are denoted by the same reference numerals.

[0049] The present application will be further described below with reference to the accompanying drawings and specific embodiments.

[0050] The present application will be further described below with reference to the accompanying drawings and specific embodiments.

[0051] An embodiment of the present application provides a display panel, which includes an array substrate and a light-emitting device layer, the light-emitting device layer being arranged on the array substrate, the light-emitting device layer including an anode layer, a first light-emitting device layer, a second light-emitting device layer and a cathode layer, the anode layer being arranged on the array substrate, the first light-emitting device layer being arranged on the anode layer, the first light-emitting device layer including a first electron blocking layer and a first light-emitting layer, the first electron blocking layer being arranged on the anode layer, the first electron blocking layer including a first electron blocking unit, a second electron blocking unit and a fifth electron blocking unit, the first light-emitting layer being arranged on the first electron blocking layer, the first light-emitting layer including a first light-emitting unit, a second light-emitting unit and a fifth light-emitting unit, the first light-emitting unit being arranged on the first electron blocking unit, the second light-emitting unit being arranged on the second electron blocking unit, and the fifth light-emitting unit being arranged on the fifth electron blocking unit. The second light-emitting device layer is disposed on the first light-emitting device layer, the second light-emitting device layer includes a second electron blocking layer and a second light-emitting layer, the second electron blocking layer is disposed on the first light-emitting layer, the second electron blocking layer includes a third electron blocking unit, a fourth electron blocking unit, and a sixth electron blocking unit, the third electron blocking unit is disposed on the first light-emitting layer, the fourth electron blocking unit is disposed on the second light-emitting layer, the second light-emitting layer is disposed on the second electron blocking layer, the second light-emitting layer includes a third light-emitting unit, a fourth light-emitting unit, and a sixth light-emitting unit, the third light-emitting unit is disposed on the third electron blocking unit, the fourth light-emitting unit is disposed on the fourth electron blocking unit, and the sixth light-emitting unit is disposed on the sixth electron blocking unit. The cathode layer is disposed on the second light-emitting device layer. The thickness of one of the first electron blocking unit and the third electron blocking unit is smaller than the thickness of the other, and the thickness of one of the second electron blocking unit and the fourth electron blocking unit is smaller than the thickness of the other; the ratio R1 of the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfies: 4≤R1≤6; the ratio R2 of the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfies: 14≤R2≤16.

[0052] In an embodiment of the present application, by reducing the thickness of the first electron blocking unit or the third electron blocking unit, and making the ratio R1 of the sum of the thickness of the first electron blocking unit and the third electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfy: 4≤R1≤6, when the first electron blocking unit or the second electron blocking unit with a smaller thickness is not required to be evaporated, a baffle can be used to block the first electron blocking unit or the second electron blocking unit with a smaller thickness. Since the thickness of the first electron blocking unit or the second electron blocking unit is small, the failure time of the baffle can be extended, so that the first electron blocking unit or the third electron blocking unit with a smaller thickness can be etched and formed using the same mask plate as the corresponding first light-emitting unit or the third light-emitting unit. In this way, not only the mask plate can be reduced, but also the time required for the mask plate to be used to block the first electron blocking unit or the second electron blocking unit can be increased. The number of plates can also be reduced, and the relative position of the first electron blocking unit or the third electron blocking unit formed by etching and the corresponding first light-emitting unit or the third light-emitting unit can be avoided from being offset. Similarly, by reducing the thickness of the second electron blocking unit or the fourth electron blocking unit, and making the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit, and the ratio R2 of the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfy: 14≤R2≤16, it is also possible to reduce the number of mask plates while avoiding the relative position of the second electron blocking unit or the fourth electron blocking unit formed by etching and the corresponding second light-emitting unit and the fourth light-emitting unit, thereby ensuring the consistency and stability of the microcavity structure in the light-emitting device layer, thereby improving the light extraction efficiency of the light-emitting device in the display panel.

[0053] See also Figure 1 , Figure 1 This is a structural diagram of a first display panel provided in an embodiment of the present application. The display panel 100 includes an array substrate 1 and a light-emitting device layer 2 . The light-emitting device layer 2 is disposed on the array substrate 1 .

[0054] In some embodiments, the array substrate 1 includes a substrate and a driving circuit layer (not shown in the figures), and the driving circuit layer is disposed on the substrate.

[0055] In some embodiments, the substrate may be a single-layer structure formed of an organic material or an inorganic material, or a multi-layer structure formed by stacking organic and inorganic materials. The organic material may be polyimide, and the inorganic material may be selected from at least one of glass, silicon nitride, silicon oxide, and silicon oxynitride.

[0056] In some embodiments, the driving circuit layer can be a multi-layer structure composed of a semiconductor layer, a conductive layer, an inorganic insulating layer and an organic insulating layer. The driving circuit layer can be replaced by the film layer structure of the driving circuit layer in the existing display panel, which will not be repeated here.

[0057] In some embodiments, see Figure 1 The light-emitting device layer 2 includes an anode layer 21, a first light-emitting device layer 22, a second light-emitting device layer 23 and a cathode layer 24. The anode layer 21 is arranged on the array substrate 1, the first light-emitting device layer 22 is arranged on the anode layer 21, the second light-emitting device layer 23 is arranged on the first light-emitting device layer 22, and the cathode layer 24 is arranged on the second light-emitting device layer 23.

[0058] It should be noted that the anode layer 21 being arranged on the array substrate 1 may mean that the anode layer 21 is located above the array substrate 1 and the anode layer 21 is in direct contact with the upper surface of the array substrate 1, or it may mean that the anode layer 21 is located above the array substrate 1 and an insulating layer is arranged between the anode layer 21 and the upper surface of the array substrate 1, and the insulating layer insulates the anode layer 21 from the array substrate 1. The relevant descriptions of other film layers can refer to the anode layer 21 and will not be repeated here.

[0059] See also Figure 1 The first light-emitting device layer 22 includes a first electron blocking layer 221 and a first light-emitting layer 222. The first electron blocking layer 221 is disposed on the anode layer 21 and includes a first electron blocking unit 2211 and a second electron blocking unit 2212. The first electron blocking unit 2211 and the second electron blocking unit 2212 are disposed on the same layer. The first light-emitting layer 222 is disposed on the first electron blocking layer 221 and includes a first light-emitting unit 2221 and a second light-emitting unit 2222. The first light-emitting unit 2221 is disposed on the first electron blocking unit 2211, and the second light-emitting unit 2222 is disposed on the second electron blocking unit 2212.

[0060] See also Figure 1 The second light-emitting device layer 23 includes a second electron blocking layer 231 and a second light-emitting layer 232. The second electron blocking layer 231 is disposed on the first light-emitting layer 222. The second electron blocking layer 231 includes a third electron blocking unit 2311 and a fourth electron blocking unit 2312. The third electron blocking unit 2311 is disposed on the first light-emitting unit 2221, and the fourth electron blocking unit 2312 is disposed on the second light-emitting layer 232. The second light-emitting layer 232 is disposed on the second electron blocking layer 231. The second light-emitting layer 232 includes a third light-emitting unit 2321 and a fourth light-emitting unit 2322. The third light-emitting unit 2321 is disposed on the third electron blocking unit 2311, and the fourth light-emitting unit 2322 is disposed on the fourth electron blocking unit 2312.

[0061] In an embodiment of the present application, the thickness of one of the first electron blocking unit 2211 and the third electron blocking unit 2311 is smaller than the thickness of the other, and the thickness of one of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is smaller than the thickness of the other.

[0062] In some embodiments, see Figure 1 , the thickness of the first electron blocking unit 2211 is smaller than the thickness of the third electron blocking unit 2311 , and the thickness of the second electron blocking unit 2212 is smaller than the thickness of the fourth electron blocking unit 2312 .

[0063] It should be noted that during the evaporation process, if the first electron blocking unit 2211 and the first light-emitting unit 2221 are to be placed in the same evaporation chamber and share a FMM, the evaporation source of the first electron blocking unit 2211 and the evaporation source of the first light-emitting unit 2221 must be placed in the same evaporation chamber. After evaporation of the first electron blocking unit 2211 is completed, the evaporation source of the first electron blocking unit 2211 must be shielded with a baffle before evaporation of the first light-emitting unit 2221 can begin. This allows the material in the evaporation source of the first electron blocking unit 2211 to be deposited on the baffle, preventing the first electron blocking unit 2211 and the first light-emitting unit 2221 from being deposited simultaneously on the panel and mixing. If the thickness of the first electron blocking unit 2211 is large, the deposition rate of the first electron blocking unit 2211 will also increase accordingly. Within the same evaporation time, the material of the first electron blocking layer deposited on the baffle will also increase, which will shorten the failure time of the baffle. When too much material is deposited on the baffle, the baffle will collapse and a gap will be generated between the evaporation source. The material of the first electron blocking layer will overflow from the gap between the baffle and the evaporation source and be deposited on the display panel and mixed with the material of the first light-emitting unit 2221, resulting in a decrease in the luminous efficiency and service life of the first light-emitting unit 2221. In this embodiment, the thickness of the first electron blocking unit 2211 is thinned to reduce the material of the foreign electron blocking layer deposited on the baffle under the same evaporation time. This can extend the expiration time of the baffle, so that the baffle can be used from the previous mass production to the next mass production (one mass production can produce multiple batches of display panels). Therefore, the first electron blocking unit 2211 and the first light-emitting unit 2221 can be placed in the same evaporation chamber and share a FMM. This not only reduces the number of mask plates, but also avoids the relative position offset between the first electron blocking unit formed by etching and the corresponding first light-emitting unit, and avoids the material of the first electron blocking layer and the material of the first light-emitting unit 2221 from mixing, which affects the luminous efficiency and service life of the first light-emitting unit 2221, thereby ensuring the consistency and stability of the microcavity structure of the light-emitting device corresponding to the first light-emitting unit 2221 in the first light-emitting device layer, thereby improving the light extraction efficiency of the light-emitting device in the display panel.

[0064] Similar to the above embodiment, in this embodiment, by making the thickness of the second electron blocking unit 2212 smaller than the thickness of the fourth electron blocking unit 2312, the second electron blocking unit 2212 and the second light-emitting unit 2222 can be placed in the same evaporation chamber to share a FMM. This not only reduces the number of mask plates, but also avoids the relative position offset between the second electron blocking unit 2212 formed by etching and the corresponding second light-emitting unit 2222, and avoids the material of the second electron blocking unit 2212 and the material of the second light-emitting unit 2222 from mixing to affect the luminous efficiency and service life of the second light-emitting unit 2222, thereby ensuring the consistency and stability of the microcavity structure of the light-emitting device corresponding to the second light-emitting unit 2222 in the first light-emitting device layer, thereby improving the light extraction efficiency of the light-emitting device in the display panel.

[0065] In some embodiments, see Figure 1 , the edge of the first light-emitting unit 2221 is flush with the edge of the first electron blocking unit 2211, and the edge of the second light-emitting unit 2222 is flush with the edge of the second electron blocking unit 2212. It should be noted that since the first light-emitting unit 2221 and the first electron blocking unit 2211 are prepared using the same mask in the same evaporation chamber, the relative position relationship between the first light-emitting unit 2221 and the second light-emitting unit 2222 will not be offset. Therefore, the edge of the first light-emitting unit 2221 can be flush with the edge of the first electron blocking unit 2211. This can improve the consistency and stability of the microcavity structure of the light-emitting device corresponding to the first light-emitting unit 2221, thereby improving the light extraction efficiency of the light-emitting device corresponding to the first light-emitting unit 2221.

[0066] In some embodiments, see Figure 1 The first electron blocking layer 221 further includes a fifth electron blocking unit 2213, the first light-emitting layer 222 further includes a fifth light-emitting unit 2223, and the fifth light-emitting unit 2223 is disposed on the fifth electron blocking unit 2213. The second electron blocking layer 231 further includes a sixth electron blocking unit 2313, the second light-emitting layer 232 further includes a sixth light-emitting unit 2323, the sixth electron blocking unit 2313 is disposed on the fifth light-emitting unit 2223, and the sixth light-emitting unit 2323 is disposed on the sixth electron blocking unit 2313.

[0067] In some embodiments, see Figure 1 The sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 is greater than the sum of the thicknesses of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313, and the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is greater than the sum of the thicknesses of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313.

[0068] In some embodiments, see Figure 1 The first and third light-emitting units 2221 and 2321 are configured to emit green light, the second and fourth light-emitting units 2222 and 2322 are configured to emit red light, and the fifth and sixth light-emitting units 2223 and 2323 are configured to emit blue light. Because the wavelengths of red and green light are both longer than those of blue light, by ensuring that the cavity lengths of the microcavity structures of the light-emitting devices corresponding to the first and third light-emitting units 2221 and 2321 are longer than those of the microcavity structures of the light-emitting devices corresponding to the fifth and sixth light-emitting units 2223 and 2323, and by ensuring that the cavity lengths of the microcavity structures of the light-emitting devices corresponding to the second and fourth light-emitting units 2222 and 2322 are longer than those of the microcavity structures of the light-emitting devices corresponding to the fifth and sixth light-emitting units 2223 and 2323, light-emitting devices of different colors have microcavity structures with corresponding optimal cavity lengths, thereby improving the luminous efficiency and service life of the light-emitting devices.

[0069] In some embodiments, see Figure 1 , the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 is greater than the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 .

[0070] In some embodiments, see Figure 1 , an edge of the fifth light emitting unit 2223 is flush with an edge of the fifth electron blocking unit 2213 , and an edge of the sixth light emitting unit 2323 is flush with an edge of the sixth electron blocking unit 2313 . It should be noted that since the wavelength of blue light is shorter than that of red light and green light, the cavity length of the microcavity structure of the light-emitting device corresponding to the fifth light-emitting unit 2223 and the sixth light-emitting unit 2323 is the shortest, and the thickness of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313 is the smallest. In this way, the fifth electron blocking unit 2213 and the fifth light-emitting unit 2223 can be prepared using the same mask plate, and the sixth electron blocking unit 2313 and the sixth light-emitting unit 2323 can use the same mask plate. This not only reduces two mask plates, but also makes the edge of the fifth light-emitting unit 2223 flush with the edge of the fifth electron blocking unit 2213, and the edge of the sixth light-emitting unit 2323 flush with the edge of the sixth electron blocking unit 2313. This can improve the consistency and stability of the microcavity structure of the light-emitting device corresponding to the fifth light-emitting unit 2223 and the sixth light-emitting unit 2323, thereby improving the luminous efficiency of the light-emitting device corresponding to the fifth light-emitting unit 2223 and the sixth light-emitting unit 2323.

[0071] In some embodiments, the thickness of one of the first electron blocking unit 2211 and the third electron blocking unit 2311 is greater than or equal to the thickness of any one of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313, and the thickness of one of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is greater than the thickness of any one of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313. It should be noted that the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 should not be too thin. If it is too thin, the luminous efficiency and service life of the first light-emitting unit 2221 and the third light-emitting unit 2321 will be reduced. By making the thickness of one of the first electron blocking unit 2211 and the third electron blocking unit 2311 greater than or equal to the thickness of any one of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313, the luminous efficiency and service life of the first light-emitting unit 2221 and the third light-emitting unit 2321 can be ensured while ensuring that one of the first electron blocking unit 2211 and the third electron blocking unit 2311 can be prepared using the same mask plate as the corresponding first light-emitting unit 2221 or the third light-emitting unit 2321.

[0072] In some embodiments, see Figure 1 The thickness of the first electron blocking unit 2211 is equal to the thickness of the fifth electron blocking unit 2213, and the thickness of the third electron blocking unit 2311 is greater than the thickness of the sixth electron blocking unit 2313. The thickness of the second electron blocking unit 2212 is equal to the thickness of the fifth electron blocking unit 2213, and the thickness of the fourth electron blocking unit 2312 is greater than the thickness of the sixth electron blocking unit 2313. In this way, while ensuring that the light-emitting devices corresponding to the first and third electron blocking units 2211 and 2311 and the light-emitting devices corresponding to the second and fourth electron blocking units 2212 and 2312 have optimal microcavity structure lengths, the first electron blocking unit 2211 and the first light-emitting unit 2221 share the same mask plate, and the second electron blocking unit 2212 and the second light-emitting unit 2222 share the same mask plate, thereby reducing the number of mask plates and improving the consistency and stability of the microcavity structure of the light-emitting device, thereby improving the light extraction efficiency of the light-emitting device in the display panel.

[0073] In some embodiments, see Figure 1, the first electron blocking unit 2211 and the first light-emitting unit 2221 share the same mask plate, the second electron blocking unit 2212 and the second light-emitting unit 2222 share the same mask plate, the fifth electron blocking unit 2213 and the fifth light-emitting unit 2223 share the same mask plate, the sixth electron blocking unit 2313 and the sixth light-emitting unit 2323 share the same mask plate, the third electron blocking unit 2311 and the third light-emitting unit 2321 each use a mask plate, the fourth electron blocking unit 2312 and the fourth light-emitting unit 2322 each use a mask plate, that is, Figure 1 The first light emitting device layer 22 and the second light emitting device layer 23 of the display panel shown require a total of 8 mask plates. Compared with the existing process, 2 mask plates can be saved, thereby reducing production costs.

[0074] In some embodiments, a ratio R1 of the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 to the thickness of either the fifth electron blocking unit 2213 or the sixth electron blocking unit 2313 satisfies the following: 4 ≤ R1 ≤ 6. For example, the ratio R1 of the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 to the thickness of either the fifth electron blocking unit 2213 or the sixth electron blocking unit 2313 is any value such as 4, 4.5, 5, 5.5, or 6. The ratio R1 only needs to be between 4 and 6 to ensure that the cavity lengths of the light-emitting devices corresponding to the first electron blocking unit 2211 and the third electron blocking unit 2311 are optimal, thereby improving the luminous efficiency and service life of the light-emitting devices corresponding to the first electron blocking unit 2211 and the third electron blocking unit 2311.

[0075] In some embodiments, a ratio R2 of the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 to the thickness of either the fifth electron blocking unit 2213 or the sixth electron blocking unit 2313 satisfies the following: 14 ≤ R2 ≤ 16. For example, the ratio R2 of the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 to the thickness of either the fifth electron blocking unit 2213 or the sixth electron blocking unit 2313 is any value such as 14, 14.5, 15, 15.5, or 16. The ratio R2 only needs to be between 14 and 16 to ensure that the cavity length of the light-emitting devices corresponding to the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is an optimal length, thereby improving the luminous efficiency and service life of the light-emitting devices corresponding to the second electron blocking unit 2212 and the fourth electron blocking unit 2312.

[0076] In some embodiments, a ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0≤R3≤1. A ratio R3 of the thickness of the third electron blocking unit 2311 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0≤R4≤1, R3+R4=1.

[0077] In some embodiments, the ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 1≤R5≤1; the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0≤R6≤1, R5+R6=1.

[0078] In some embodiments, the ratio R3 of the thickness of one of the first electron blocking unit 2211 and the third electron blocking unit 2311 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.17≤R3≤0.19; the ratio R4 of the thickness of the other of the first electron blocking unit 2211 and the third electron blocking unit 2311 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.81≤R4≤0.83.

[0079] In some embodiments, the ratio R5 of the thickness of one of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.05≤R5≤0.07; the ratio R6 of the thickness of the other of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.93≤R6≤0.95.

[0080] In some embodiments, see Figure 1The ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies the following: 0.17≤R3≤0.19. The ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies the following: 0.81≤R4≤0.83. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies the following: 0.05≤R5≤0.07. The ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies the following: 0.93≤R6≤0.95.

[0081] In some embodiments, see Figure 1 The sum of the thicknesses of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313 is greater than or equal to 8 nanometers and less than or equal to 12 nanometers.

[0082] In some embodiments, see Figure 1 , the thickness of the fifth electron blocking unit 2213 is greater than or equal to 3 nanometers and less than or equal to 7 nanometers, and the thickness of the sixth electron blocking unit 2313 is greater than or equal to 3 nanometers and less than or equal to 7 nanometers.

[0083] In some embodiments, the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313 have the same thickness.

[0084] In some embodiments, see Figure 1 The first light-emitting device layer 22 also includes a hole injection layer 223, a first hole transport layer 224, a first hole blocking layer 225 and a first electron transport layer 226. The hole injection layer 223 is arranged on the anode layer 21, the first hole transport layer 224 is arranged on the hole injection layer 223, the first electron blocking layer 221 is arranged on the first hole transport layer 224, the first hole blocking layer 225 is arranged on the first light-emitting layer 222, and the first electron transport layer 226 is arranged on the first hole blocking layer 225.

[0085] In some embodiments, see Figure 1 The first light emitting device layer 22 further includes an N-type semiconductor layer 227 . The N-type semiconductor layer 227 is disposed on the first electron transport layer 226 . The N-type semiconductor layer 227 is configured to provide electrons to the first light emitting device layer 22 .

[0086] In some embodiments, see Figure 1The second light-emitting device layer 23 also includes a second hole transport layer 233, a second hole blocking layer 234, a second electron transport layer 235 and an electron injection layer 236. The second hole transport layer 233 is arranged on the first light-emitting device layer 22, the second electron blocking layer 231 is arranged on the second hole transport layer 233, the second hole blocking layer 234 is arranged on the second light-emitting layer 232, the second electron transport layer 235 is arranged on the second hole blocking layer 234, the electron injection layer 236 is arranged on the second electron transport layer 235, and the cathode layer 24 is arranged on the electron injection layer 236.

[0087] In some embodiments, see Figure 1 The second light-emitting device layer 23 further includes a P-type semiconductor layer 237 , which is disposed on a surface of the second hole transport layer 233 away from the second electron blocking layer 231 , and is configured to provide holes to the second light-emitting device layer 23 .

[0088] It should be noted that the charge generation layer (CGL) is a unique structure that distinguishes stacked organic light-emitting diode devices from single-layer organic light-emitting diode devices. The CGL consists of two layers: an N-type semiconductor layer 227 (NCGL) and a P-type semiconductor layer 237 (PCGL). It generates charge, providing holes and electrons for the multilayer light-emitting device. The N-type semiconductor layer 227 is made by doping an organic electron transport material with a metal (typically Yb, Li, Cs, Mg, etc.). The organic electron transport material in the N-type semiconductor layer 227 must have an electron mobility μe ≥ 10-3 cm2 / Vs. The P-type semiconductor layer 237 is typically composed of a metal oxide (such as ITO, WO3, MoO3, V2O5) or a hole transport material doped with a Lewis acid (such as FeCl3:NPB, F4-TCNQ:NPB). The organic hole transport material must have a hole mobility μh ≥ 10-2 cm2 / Vs.

[0089] In some embodiments, see Figure 2 , Figure 2 This is a schematic diagram of the structure of the second display panel provided in the embodiment of the present application, and its structure is similar to Figure 1The structure of the first display panel shown is substantially the same, except that: the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 is 0, and the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 is 1. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is 0, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is 1, that is, the thicknesses of the first electron blocking unit 2211 and the second electron blocking unit 2212 are both 0, that is, Figure 2 In the embodiment shown, the first electron blocking unit 2211 and the second electron blocking unit 2212 in the first light-emitting device layer 22 are removed, and the third electron blocking unit 2311 and the fourth electron blocking unit 2312 are retained. The ratio of the thickness of the third electron blocking unit 2311 to the thickness of the fifth electron blocking unit 2213 is greater than or equal to 4 and less than or equal to 6, and the ratio of the thickness of the fourth electron blocking unit 2312 to the thickness of the fifth electron blocking unit 2213 is greater than or equal to 14 and less than or equal to 16. In this way, by removing the first electron blocking unit 2211 and the second electron blocking unit 2212, two mask plates can be saved, so that Figure 2 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only require the use of 8 mask plates. Compared with the existing process, 2 mask plates can be saved, thereby reducing production costs. This also saves two mask plates, which not only reduces production costs but also improves the luminous efficiency of the light-emitting device.

[0090] It should be noted that there are multiple leakage paths in the film structure of the display panel, and the main leakage path is the path achieved through the charge generation layer. For example, when only the first light-emitting unit 2221 is lit, the second light-emitting unit 2222 will also be lit. This phenomenon is more obvious at low brightness. The reason is that part of the charge that lights up the first light-emitting unit 2221 flows through the charge generation layer (i.e., the N-type semiconductor layer 227) to the second light-emitting unit 2222, causing the circuit of the second light-emitting unit 2222 to be turned on, so that the second light-emitting unit 2222 is lit. While most of the charges flow from the charge generation layer to the adjacent light-emitting unit, a small part of the charges flow from the first electron blocking layer 221 or the second electron blocking layer 231 to the adjacent pixels. Similarly, there will be leakage current between the electron blocking units corresponding to light-emitting units of different colors. This application Figure 2In the embodiment shown, by setting the thickness of the first electron blocking unit 2211 and the second electron blocking unit 2212 to 0, the first electron blocking unit 2211 and the second electron blocking unit 2212 are removed, thereby cutting off the path for the charge to flow from the first light-emitting unit 2221 through the first electron blocking unit 2211 and the second electron blocking unit 2212 to the second light-emitting unit 2222, thereby reducing the leakage current between the first light-emitting unit 2221 and the second light-emitting unit 2222, and reducing the probability of the second light-emitting unit 2222 being secretly lit due to the leakage current.

[0091] In some embodiments, see Figure 3 , Figure 3 This is a schematic diagram of the structure of the third display panel provided in the embodiment of the present application, and its structure is similar to Figure 1 The structure of the first display panel shown is substantially the same, except that: the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 is 0, and the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 is 1. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.05≤R5≤0.07, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.93≤R6≤0.95, that is, the thickness of the first electron blocking unit 2211 is 0, that is, Figure 3 In the embodiment shown, the first electron blocking unit 2211 in the first light-emitting device layer 22 is removed, and the second electron blocking unit 2212, the third electron blocking unit 2311 and the fourth electron blocking unit 2312 are retained. The ratio of the thickness of the third electron blocking unit 2311 to the thickness of the fifth electron blocking unit 2213 is greater than or equal to 4 and less than or equal to 6. In this way, by removing the first electron blocking unit 2211 and making the second electron blocking unit 2212 and the second light-emitting unit 2222 share a mask plate, Figure 3 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only require the use of 8 mask plates. Compared with the existing process, 2 mask plates can be saved, thereby reducing production costs. This also saves two mask plates, which not only reduces production costs but also improves the luminous efficiency of the light-emitting device.

[0092] In some embodiments, see Figure 4 , Figure 4 This is a schematic diagram of the structure of the fourth display panel provided in the embodiment of the present application, and its structure is similar to Figure 1 The structure of the first display panel shown is substantially the same, except that: the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.17≤R3≤0.19, and the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.81≤R4≤0.83. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is 0, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is 1, that is, the thickness of the second electron blocking unit 2212 is 0, that is, Figure 4 In the embodiment shown, the second electron blocking unit 2212 in the first light-emitting device layer 22 is removed, and the first electron blocking unit 2211, the third electron blocking unit 2311 and the fourth electron blocking unit 2312 are retained. The ratio of the thickness of the fourth electron blocking unit 2312 to the thickness of the fifth electron blocking unit 2213 is greater than or equal to 14 and less than or equal to 16. In this way, by removing the second electron blocking unit 2212 and making the first electron blocking unit 2211 and the first light-emitting unit 2221 share a mask plate, Figure 4 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only require 8 mask plates, which can save 2 mask plates compared to the existing process, thereby not only reducing production costs but also improving the luminous efficiency of the light-emitting devices.

[0093] In some embodiments, see Figure 5 , Figure 5 This is a schematic diagram of the structure of the fifth display panel provided in the embodiment of the present application, and its structure is similar to Figure 1 The structure of the first display panel shown is substantially the same, except that: the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 is 1, and the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 is 0. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.05≤R5≤0.07, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.93≤R6≤0.95, that is, the thickness of the third electron blocking unit 2311 is 0, that is, Figure 5In the embodiment shown, the third electron blocking unit 2311 in the second light-emitting device layer 23 is removed, and the first electron blocking unit 2211, the second electron blocking unit 2212 and the fourth electron blocking unit 2312 are retained. The ratio of the thickness of the second electron blocking unit 2212 to the thickness of the fifth electron blocking unit 2213 is greater than or equal to 4 and less than or equal to 6. In this way, by removing the third electron blocking unit 2311 and making the second electron blocking unit 2212 and the second light-emitting unit 2222 share a mask plate, Figure 5 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only require 8 mask plates, which can save 2 mask plates compared to the existing process, thereby not only reducing production costs but also improving the luminous efficiency of the light-emitting devices.

[0094] In some embodiments, see Figure 6 , Figure 6 This is a schematic diagram of the structure of the sixth display panel provided in the embodiment of the present application, and its structure is similar to Figure 1 The structure of the first display panel shown is substantially the same, except that: the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.17≤R3≤0.19, and the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.81≤R4≤0.83. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is 1, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is 0, that is, the thickness of the fourth electron blocking unit 2312 is 0, that is, Figure 6 In the embodiment shown, the fourth electron blocking unit 2312 in the second light-emitting device layer 23 is removed, and the first electron blocking unit 2211, the second electron blocking unit 2212 and the third electron blocking unit 2311 are retained. The ratio of the thickness of the second electron blocking unit 2212 to the thickness of the fifth electron blocking unit 2213 is greater than or equal to 4 and less than or equal to 6. In this way, by removing the fourth electron blocking unit 2312 and making the first electron blocking unit 2211 and the first light-emitting unit 2221 share a mask plate, Figure 6 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only require 8 mask plates, which can save 2 mask plates compared to the existing process, thereby not only reducing production costs but also improving the luminous efficiency of the light-emitting devices.

[0095] In some embodiments, see Figure 7 , Figure 7 This is a schematic diagram of the structure of the seventh display panel provided in the embodiment of the present application, and its structure is similar to Figure 1 The structure of the first display panel shown is substantially the same, except that: a ratio (R3) of the thickness of the first electron blocking unit 2211 to the sum of the thicknesses of the first and third electron blocking units 2211, 2311, satisfies the following conditions: 0.81 ≤ R3 ≤ 0.83; a ratio (R4) of the thickness of the third electron blocking unit 2311 to the sum of the thicknesses of the first and third electron blocking units 2211, 2311, satisfies the following conditions: 0.17 ≤ R4 ≤ 0.19; a ratio (R5) of the thickness of the second electron blocking unit 2212 to the sum of the thicknesses of the second and fourth electron blocking units 2212, 2312, satisfies the following conditions: 0.05 ≤ R5 ≤ 0.07; and a ratio (R6) of the thickness of the fourth electron blocking unit 2312 to the sum of the thicknesses of the second and fourth electron blocking units 2212, 2312, satisfies the following conditions: 0.93 ≤ R6 ≤ 0.95. Figure 7 In the embodiment shown, the second electron blocking unit 2212 and the second light emitting unit 2222 share a mask plate, and the third electron blocking unit 2311 and the third light emitting unit 2321 share a mask plate, so that Figure 7 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only require 8 mask plates, which can save 2 mask plates compared to the existing process, thereby not only reducing production costs but also improving the luminous efficiency of the light-emitting devices.

[0096] In some embodiments, see Figure 8 , Figure 8 This is a schematic diagram of the structure of the eighth display panel provided in the embodiment of the present application, and its structure is similar to Figure 1 The structure of the first display panel shown is substantially the same, except that: a ratio (R3) of the thickness of the first electron blocking unit 2211 to the sum of the thicknesses of the first and third electron blocking units 2211, 2311, satisfies the following conditions: 0.17 ≤ R3 ≤ 0.19; a ratio (R4) of the thickness of the third electron blocking unit 2311 to the sum of the thicknesses of the first and third electron blocking units 2211, 2311, satisfies the following conditions: 0.81 ≤ R4 ≤ 0.83; a ratio (R5) of the thickness of the second electron blocking unit 2212 to the sum of the thicknesses of the second and fourth electron blocking units 2212, 2312, satisfies the following conditions: 0.93 ≤ R5 ≤ 0.95; and a ratio (R6) of the thickness of the fourth electron blocking unit 2312 to the sum of the thicknesses of the second and fourth electron blocking units 2212, 2312, satisfies the following conditions: 0.05 ≤ R6 ≤ 0.07. Figure 8In the embodiment shown, the first electron blocking unit 2211 and the first light emitting unit 2221 share a mask plate, and the fourth electron blocking unit 2312 and the fourth light emitting unit 2322 share a mask plate. Figure 8 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only require 8 mask plates, which can save 2 mask plates compared to the existing process, thereby not only reducing production costs but also improving the luminous efficiency of the light-emitting devices.

[0097] According to the display panel provided in the above embodiment of the present application, the embodiment of the present application further provides a display device, see Figure 9 , Figure 9 This is a schematic structural diagram of a display device according to an embodiment of the present application. The display device 1000 includes a housing 200 and a display panel 100 as provided in any of the above embodiments. The display panel 100 is disposed on the housing 200. The display device provided in the embodiment of the present application can achieve the same technical effects as the display panel provided in any of the above embodiments, and will not be described in detail here.

[0098] Beneficial effects of the embodiments of the present application: The embodiments of the present application provide a display panel and a display device, the display panel includes an array substrate and a light-emitting device layer, the light-emitting device layer includes an anode layer, a first light-emitting device layer, a second light-emitting device layer and a cathode layer, by reducing the thickness of the first electron blocking unit or the third electron blocking unit, and making the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit, and the ratio R1 of the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfy: 4≤R1≤6, when the first electron blocking unit or the second electron blocking unit with a smaller thickness is not needed to be evaporated, a baffle can be used to block the first electron blocking unit or the second electron blocking unit with a smaller thickness. Since the thickness of the first electron blocking unit or the second electron blocking unit is smaller, the failure time of the baffle can be extended so that the first electron blocking unit or the third electron blocking unit with a smaller thickness can be aligned with the corresponding The first light-emitting unit or the third light-emitting unit is formed by etching using the same mask plate, which not only reduces the number of mask plates, but also avoids the relative position offset between the first electron blocking unit or the third electron blocking unit formed by etching and the corresponding first light-emitting unit or the third light-emitting unit. Similarly, by reducing the thickness of the second electron blocking unit or the fourth electron blocking unit, and making the ratio R2 of the sum of the thickness of the second electron blocking unit and the fourth electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfy: 14≤R2≤16, it is also possible to reduce the number of mask plates while avoiding the relative position offset between the second electron blocking unit or the fourth electron blocking unit formed by etching and the corresponding second light-emitting unit and the fourth light-emitting unit, thereby ensuring the consistency and stability of the microcavity structure in the light-emitting device layer, thereby improving the light extraction efficiency of the light-emitting device in the display panel.

[0099] In summary, although the present application is disclosed above with preferred embodiments, the above preferred embodiments are not intended to limit the present application. Ordinary technicians in this field can make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application is based on the scope defined by the claims.

Claims

1. A display panel, characterized in that: The invention comprises an array substrate and a light-emitting device layer, wherein the light-emitting device layer is provided on the array substrate, and the light-emitting device layer comprises: an anode layer, disposed on the array substrate; a first light-emitting device layer, disposed on the anode layer, comprising a first electron blocking layer and a first light-emitting layer, wherein the first electron blocking layer is disposed on the anode layer, and comprises a first electron blocking unit, a second electron blocking unit, and a fifth electron blocking unit; a first light-emitting layer is disposed on the first electron blocking layer, and comprises a first light-emitting unit, a second light-emitting unit, and a fifth light-emitting unit, wherein the first light-emitting unit is disposed on the first electron blocking unit, the second light-emitting unit is disposed on the second electron blocking unit, and the fifth light-emitting unit is disposed on the fifth electron blocking unit; a second light-emitting device layer, disposed on the first light-emitting device layer, the second light-emitting device layer including a second electron blocking layer and a second light-emitting layer, the second electron blocking layer being disposed on the first light-emitting layer, the second electron blocking layer including a third electron blocking unit, a fourth electron blocking unit and a sixth electron blocking unit, the third electron blocking unit being disposed on the first light-emitting unit, the fourth electron blocking unit being disposed on the second light-emitting unit; the second light-emitting layer being disposed on the second electron blocking layer, the second light-emitting layer including a third light-emitting unit, a fourth light-emitting unit and a sixth light-emitting unit, the third light-emitting unit being disposed on the third electron blocking unit, the fourth light-emitting unit being disposed on the fourth electron blocking unit, and the sixth light-emitting unit being disposed on the sixth electron blocking unit; a cathode layer, disposed on the second light-emitting device layer; Among them, the thickness of one of the first electron blocking unit and the third electron blocking unit is smaller than the thickness of the other, and the thickness of one of the second electron blocking unit and the fourth electron blocking unit is smaller than the thickness of the other; the ratio R1 of the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfies: 4≤R1≤6; the ratio R2 of the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfies: 14≤R2≤16.

2. The display panel according to claim 1, wherein An edge of the first light emitting unit is flush with an edge of the first electron blocking unit, or an edge of the third light emitting unit is flush with an edge of the third electron blocking unit; An edge of the second light emitting unit is flush with an edge of the second electron blocking unit, or an edge of the fourth light emitting unit is flush with an edge of the fourth electron blocking unit.

3. The display panel according to claim 1, wherein An edge of the fifth light emitting unit is flush with an edge of the fifth electron blocking unit, and an edge of the sixth light emitting unit is flush with an edge of the sixth electron blocking unit.

4. The display panel according to claim 1, wherein: The thickness of one of the first electron blocking unit and the third electron blocking unit is greater than or equal to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit, and the thickness of one of the second electron blocking unit and the fourth electron blocking unit is greater than the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit.

5. The display panel according to claim 1, wherein A ratio R3 of the thickness of the first electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0≤R3≤1; a ratio R3 of the thickness of the third electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0≤R4≤1, R3+R4=1.

6. The display panel according to claim 5, wherein: The ratio R3 of the thickness of the first electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.17≤R3≤0.19, and the ratio R3 of the thickness of the other of the third electron blocking units to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.81≤R4≤0.83; Alternatively, a ratio R3 of the thickness of the first electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.81≤R3≤0.83, and a ratio R4 of the thickness of the third electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.17≤R4≤0.

19.

7. The display panel according to claim 1, wherein: The ratio R5 of the thickness of the second electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 1≤R5≤1; the ratio R6 of the thickness of the fourth electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0≤R6≤1, R5+R6=1.

8. The display panel according to claim 7, wherein: The ratio R5 of the thickness of the second electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.05≤R5≤0.07; the ratio R6 of the thickness of the fourth electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.93≤R6≤0.95; Alternatively, a ratio R5 of the thickness of the second electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.93≤R5≤0.95; a ratio R6 of the thickness of the fourth electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.05≤R6≤0.

07.

9. The display panel according to claim 1, wherein: The sum of the thicknesses of the fifth electron blocking unit and the sixth electron blocking unit is greater than or equal to 8 nanometers and less than or equal to 12 nanometers.

10. The display panel according to claim 9, wherein: The thickness of the fifth electron blocking unit is greater than or equal to 3 nanometers and less than or equal to 7 nanometers, and the thickness of the sixth electron blocking unit is greater than or equal to 3 nanometers and less than or equal to 7 nanometers.

11. The display panel according to claim 9, wherein The fifth electron blocking unit and the sixth electron blocking unit have the same thickness.

12. The display panel according to any one of claims 1 to 11, wherein: The first light emitting unit and the third light emitting unit are configured to emit green light, the second light emitting unit and the fourth light emitting unit are configured to emit red light, and the fifth light emitting unit and the sixth light emitting unit are configured to emit blue light.

13. The display panel according to any one of claims 1 to 11, wherein: The first light emitting device layer further includes: a hole injection layer, disposed on the anode layer; a first hole transport layer, disposed on the hole injection layer, and a first electron blocking layer disposed on the first hole transport layer; a first hole blocking layer, disposed on the first light-emitting layer; The first electron transport layer is disposed on the first hole blocking layer.

14. The display panel according to claim 13, wherein: The first light emitting device layer further includes an N-type semiconductor layer, wherein the N-type semiconductor layer is disposed on the first electron transport layer, and the N-type semiconductor layer is configured to provide electrons to the first light emitting device layer.

15. The display panel according to any one of claims 1 to 11, wherein: The second light emitting device layer further includes: a second hole transport layer, disposed on the first light-emitting device layer, and a second electron blocking layer disposed on the second hole transport layer; a second hole blocking layer, disposed on the second light-emitting layer; a second electron transport layer, disposed on the second hole blocking layer; The electron injection layer is disposed on the second electron transport layer, and the cathode layer is disposed on the electron injection layer.

16. The display panel according to claim 15, wherein: The second light emitting device layer further includes a P-type semiconductor layer, which is disposed on a surface of the second hole transport layer away from the second electron blocking layer, and is configured to provide holes to the second light emitting device layer.

17. A display device, characterized in that: Comprising the display panel according to any one of claims 1 to 16.

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