Filter, preparation method thereof and electronic equipment

CN119731788AActive Publication Date: 2025-03-28BOE TECHNOLOGY GROUP CO LTD
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Patent Information

Application Number
CN202280002837.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2022-08-25
Publication Date
2025-03-28
Estimated Expiration
2042-08-25

AI Technical Summary

Technical Problem

During the high-temperature annealing or high-temperature film deposition process of existing filters, the conductive pillars are easy to protrude, causing disconnection and reducing product yield. Moreover, silicon-based IPD has the problem of high microwave loss, making it difficult to meet wide-band and low-cost requirements. .

Method used

Through glass hole TGV technology is used to create through holes on the glass substrate and fill them with metal materials. The three-dimensional spiral inductor structure and bump structure are used to connect the conductive pillars and electrodes to avoid protruding conductive pillars, and the filter inductor and the filter are connected through bonding. Filter capacitor to improve connection reliability.

Benefits of technology

It achieves better electrical performance, reduces microwave loss, improves product yield, is suitable for high-frequency applications, reduces production costs, and meets the needs of broadband and low cost.

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Abstract

The invention provides a filter, a preparation method thereof and electronic equipment. The filter comprises a first substrate (100), a second substrate (200) and a connecting substrate (300), the first substrate (100) and the second substrate (200) are oppositely arranged, the connecting substrate (300) is arranged between the first substrate (100) and the second substrate (200), at least one first substrate electrode is arranged on the first substrate (100), and at least one second substrate electrode is arranged on the second substrate (200). The connecting substrate (300) at least comprises a connecting substrate (30) and at least one conductive column penetrating through the connecting substrate (30) in the thickness direction, a first bump structure (51) is arranged at the end, close to the first substrate (100), of the conductive column, and a second bump structure (52) is arranged at the end, close to the second substrate (200), of the conductive column. The first salient point structure (51) is connected with the first substrate electrode in a bonding mode, and the second salient point structure (52) is connected with the second substrate electrode in a bonding mode.
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