Sewage treatment system, method and electronic equipment

Abstract

The present invention discloses a sewage treatment system, method, and electronic device, relating to the technical field of sewage treatment. The system includes a distributed plasma control module, a water information collection module, and a plasma treatment module. The plasma treatment module includes a negative electrode plate and an array of plasma sewage treatment components. The plasma sewage treatment components include a high-voltage power supply, a low-temperature plasma generating unit, and a vertical motion module. The electrode in the low-temperature plasma generating unit is connected to the positive electrode of the high-voltage power supply and arranged opposite the negative electrode plate, which is connected to the negative electrode of the high-voltage power supply. The distributed plasma control module is respectively connected to the water information collection module and each vertical motion module, and is used to determine a first target control parameter for each vertical motion module based on the sewage information collected by the water information collection module before and after treatment. The module controls the corresponding vertical motion module to drive the corresponding low-temperature plasma generating unit to move vertically to adjust the plasma treatment density.

Description

Technical Field

[0001] The present invention relates to the technical field of sewage treatment, and in particular to a sewage treatment system, method and electronic equipment. Background Art

[0002] At present, with the continuous deepening of human production and life activities, the complexity of various industrial and domestic sewage has increased, especially organic sewage, which poses a huge challenge to the treatment plan of organic sewage due to its complex types, slow conversion of pollutants and long treatment cycle.

[0003] The organic wastewater treatment in related technologies mainly includes physical treatment, chemical treatment, biological treatment, physicochemical treatment and plasma wastewater treatment. Among them, physical treatment method: using physical action to separate suspended matter in wastewater, such as screening, sedimentation, flotation, filtration, etc. Chemical treatment method: using chemical reactions to separate and recover pollutants in wastewater, such as neutralization, coagulation, electrolysis, oxidation-reduction, etc. Biological treatment method: using the life activities of microorganisms to degrade organic matter, which is divided into aerobic biological treatment (such as activated sludge method) and anaerobic biological treatment. Physical and chemical method: combining physical and chemical methods to treat wastewater, such as adsorption, ion exchange, etc.

[0004] However, the sewage treatment methods in related technologies have a single sewage treatment process and are difficult to meet the needs. Summary of the Invention

[0005] The present invention aims to solve one of the technical problems in the related art at least to a certain extent. To this end, a first object of the present invention is to provide a sewage treatment system to achieve high-performance sewage treatment.

[0006] The second object of the present invention is to provide a sewage treatment method.

[0007] A third object of the present invention is to provide an electronic device.

[0008] To achieve the above objectives, a first embodiment of the present invention provides a sewage treatment system, comprising: a distributed plasma control module, a water information collection module, and a plasma treatment module, wherein the plasma treatment module comprises a negative electrode plate and an array of plasma sewage treatment components, wherein the plasma sewage treatment components comprise a high-voltage power supply, a low-temperature plasma generating unit, and a vertical motion module, wherein an electrode in the low-temperature plasma generating unit is connected to the positive electrode of the high-voltage power supply and is arranged opposite to the negative electrode plate, and the negative electrode plate is connected to the negative electrode of the high-voltage power supply; wherein the distributed plasma control module is respectively connected to the water information collection module and each of the vertical motion modules, and is configured to determine a first target control parameter of each vertical motion module based on the pre-treatment sewage information and post-treatment sewage information collected by the water information collection module, and control the corresponding vertical motion module to drive the corresponding low-temperature plasma generating unit to move vertically according to the first target control parameter to adjust the plasma treatment density.

[0009] In addition, the sewage treatment system according to the embodiment of the present invention may also have the following additional technical features:

[0010] In one embodiment of the present invention, the distributed plasma control module is also connected to each of the high-voltage power supplies, and is also used to determine the second target control parameters of each of the high-voltage power supplies based on the sewage information before treatment and the sewage information after treatment, and adjust the power supply parameters of the corresponding high-voltage power supply according to the second target control parameters to adjust the plasma treatment intensity.

[0011] In one embodiment of the present invention, the plasma processing module also includes a spray device, which is arranged on one side of the sewage treatment area, and the sewage treatment area is the area between the array plasma sewage treatment assembly and the negative plate; wherein the distributed plasma control module is also connected to the spray device respectively, and is also used to determine the third target control parameter of the spray device based on the sewage information before treatment and the sewage information after treatment, and control the flow rate of the sewage sprayed into the sewage treatment area by the spray device according to the third target control parameter.

[0012] In one embodiment of the present invention, the plasma wastewater treatment component also includes a horizontal motion module; wherein, the distributed plasma control module is also connected to each of the vertical motion modules respectively, and is used to determine the fourth target control parameter of each horizontal motion module based on the wastewater information before treatment and the wastewater information after treatment collected by the water information collection module, and control the corresponding horizontal motion module to drive the corresponding low-temperature plasma generating unit to move horizontally according to the fourth target control parameter to adjust the plasma treatment intensity.

[0013] In one embodiment of the present invention, the plasma processing module further includes a life detection module, which is respectively connected to the distributed plasma control module and the electrodes in each of the low-temperature plasma generating units, and is used to detect the life of each of the electrodes and transmit the detected life to the distributed plasma control module; wherein, the distributed plasma control module is further used to issue a prompt message to replace the corresponding low-temperature plasma generating unit when the life reaches a preset life threshold.

[0014] In one embodiment of the present invention, the system further includes: a temperature control module connected to the distributed plasma control module, for controlling the temperature of the sewage before treatment under the control of the distributed plasma control module; and a thermal management module connected to the temperature control module and the plasma processing module, for regulating the temperature of the temperature control module and the plasma processing module.

[0015] In one embodiment of the present invention, the system further includes: a power supply module connected to the plasma processing module and the distributed plasma control module, for supplying power to the plasma processing module and the distributed plasma control module.

[0016] In one embodiment of the present invention, the distributed plasma control module further includes: a storage device for storing a pretreatment scheme, wherein the pretreatment scheme includes a scheme for controlling the temperature control module and the plasma processing module generated by the distributed plasma control module based on the sewage information.

[0017] To achieve the above-mentioned objectives, a second embodiment of the present invention provides a sewage treatment method, which is used in the above-mentioned sewage treatment system. The method includes: collecting sewage information to obtain sewage information before treatment and sewage information after treatment; controlling the vertical movement of a low-temperature plasma generating unit based on the sewage information before treatment and the sewage information after treatment to adjust the plasma treatment density, and using the plasma generated by the low-temperature plasma generating unit to treat the sewage.

[0018] To achieve the above-mentioned purpose, the third aspect of the present invention proposes an electronic device, comprising a memory, a processor, and a computer program stored in the memory and running on the processor. When the computer program is executed by the processor, the above-mentioned sewage treatment method is implemented.

[0019] According to an embodiment of the present invention, the sewage treatment system, method and electronic device include a distributed plasma control module, a water information collection module and a plasma treatment module. The plasma treatment module includes a negative plate and an array of plasma sewage treatment components. The plasma sewage treatment component includes a high-voltage power supply, a low-temperature plasma generating unit and a vertical motion module. The electrode in the low-temperature plasma generating unit is connected to the positive electrode of the high-voltage power supply and is arranged opposite to the negative plate. The negative plate is connected to the negative electrode of the high-voltage power supply. The distributed plasma control module is respectively connected to the water information collection module and each vertical motion module, and is used to determine the first target control parameter of each vertical motion module based on the sewage information before and after treatment collected by the water information collection module. The corresponding vertical motion module is controlled according to the first target control parameter to drive the corresponding low-temperature plasma generating unit to move vertically to adjust the plasma treatment density. Thus, by controlling the vertical motion module to drive the low-temperature plasma generating unit to move vertically, the plasma treatment density can be adjusted, the area where sewage treatment can be performed can be changed, and thus better sewage treatment capacity can be achieved.

[0020] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a structural block diagram of a sewage treatment system according to an embodiment of the present invention;

[0022] Figure 2 It is a structural block diagram of a sewage treatment system according to a specific embodiment of the present invention;

[0023] Figure 3 is a structural block diagram of a plasma processing module according to a specific embodiment of the present invention;

[0024] Figure 4 is a schematic structural diagram of a plasma processing module according to an example of the present invention;

[0025] Figure 5 is a schematic structural diagram of an array-type plasma wastewater treatment assembly according to some embodiments of the present invention;

[0026] Figure 6 is a schematic structural diagram of a low-temperature plasma generating unit in some embodiments of the present invention;

[0027] Figure 7 is a schematic structural diagram of a sewage treatment system according to some embodiments of the present invention;

[0028] Figure 8 is a flow chart of a sewage treatment method according to an embodiment of the present invention;

[0029] Figure 9 It is a structural block diagram of an electronic device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0030] The following describes a sewage treatment system, method, and electronic device according to embodiments of the present invention with reference to the accompanying drawings. Throughout, identical or similar reference numerals represent identical or similar components or components having identical or similar functions. The embodiments described with reference to the accompanying drawings are illustrative only and are not to be construed as limiting the present invention.

[0031] Figure 1 4 is a structural block diagram of a sewage treatment system according to an embodiment of the present invention.

[0032] like Figure 1 As shown, the sewage treatment system 100 includes a distributed plasma control module 7, a water information collection module 101 and a plasma processing module 3. The plasma processing module 3 includes a negative plate and an array of plasma sewage treatment components. The plasma sewage treatment component includes a high-voltage power supply, a low-temperature plasma generating unit and a vertical motion module. The electrode in the low-temperature plasma generating unit is connected to the positive electrode of the high-voltage power supply and is arranged opposite to the negative plate. The negative plate is connected to the negative electrode of the high-voltage power supply. Among them, the distributed plasma control module 7 is respectively connected to the water information collection module 101 and each vertical motion module, and is used to determine the first target control parameter of each vertical motion module based on the sewage information before treatment and the sewage information after treatment collected by the water information collection module 101, and control the corresponding vertical motion module to drive the corresponding low-temperature plasma generating unit to move vertically according to the first target control parameter to adjust the plasma treatment density.

[0033] Therefore, by controlling the vertical motion module to drive the low-temperature plasma generating unit to move vertically, the plasma treatment density can be adjusted, and the area where sewage treatment can be carried out can be changed, thereby achieving better sewage treatment capacity.

[0034] In some embodiments of the present invention, the distributed plasma control module 7 is also connected to each high-voltage power supply, and is also used to determine the second target control parameters of each high-voltage power supply based on the sewage information before treatment and the sewage information after treatment, and adjust the power supply parameters of the corresponding high-voltage power supply according to the second target control parameters to adjust the plasma treatment intensity.

[0035] In some embodiments of the present invention, the plasma processing module 3 also includes a spray device, which is arranged on one side of the sewage treatment area, and the sewage treatment area is the area between the array plasma sewage treatment component and the negative plate; wherein, the distributed plasma control module 7 is also connected to the spray device respectively, and is also used to determine the third target control parameter of the spray device based on the sewage information before treatment and the sewage information after treatment, and control the flow rate of the sewage sprayed into the sewage treatment area by the spray device according to the third target control parameter.

[0036] In some embodiments of the present invention, the plasma wastewater treatment component also includes a horizontal motion module; wherein, the distributed plasma control module 7 is also connected to each vertical motion module respectively, and is used to determine the fourth target control parameter of each horizontal motion module based on the wastewater information before treatment and the wastewater information after treatment collected by the water information collection module 101, and control the corresponding horizontal motion module to drive the corresponding low-temperature plasma generating unit to move horizontally according to the fourth target control parameter to adjust the plasma treatment intensity.

[0037] In some embodiments of the present invention, the plasma processing module 3 also includes a life detection module, which is respectively connected to the distributed plasma control module 7 and the electrodes in each low-temperature plasma generating unit, and is used to detect the life of each electrode and transmit the detected life to the distributed plasma control module 7; wherein, the distributed plasma control module 7 is also used to issue a prompt message to prompt the replacement of the corresponding low-temperature plasma generating unit when the life reaches a preset life threshold.

[0038] In some embodiments of the present invention, the sewage treatment system 100 also includes: a temperature control module, connected to the distributed plasma control module 7, for controlling the temperature of the sewage before treatment under the control of the distributed plasma control module 7; a thermal management module, connected to the temperature control module and the plasma processing module 3, for adjusting the temperature of the temperature control module and the plasma processing module 3.

[0039] In some embodiments of the present invention, the sewage treatment system 100 further includes: a power supply module connected to the plasma processing module 3 and the distributed plasma control module 7 for supplying power to the plasma processing module 3 and the distributed plasma control module 7 .

[0040] In some embodiments of the present invention, the distributed plasma control module 7 further includes: a storage device for storing a pretreatment scheme, wherein the pretreatment scheme includes a scheme for controlling the temperature control module and the plasma processing module 3 generated by the distributed plasma control module 7 according to sewage information.

[0041] The following describes the process in conjunction with a specific embodiment.

[0042] Specifically, see Figure 2 In order to achieve sewage treatment, a sewage treatment system 100 is set up, which includes a distributed plasma control module 7, and also includes a sewage information collection module 1, a temperature control module 2, a plasma treatment module 3, and a terminal sampling module 4 connected in sequence, that is, the above-mentioned water information collection module 101 includes the sewage information collection module 1 and the terminal sampling module 4.

[0043] Moreover, the sewage information collection module 1, the temperature control module 2, the plasma treatment module 3, and the terminal sampling module 4 can be connected in sequence through a sewage pipe. As an example, assume that the front end of the sewage information collection module 1 is connected to a water reservoir and a filter. At this time, the sewage in the water reservoir will pass through the filter to filter out large particles, and then flow through the sewage pipe in the order of the sewage information collection module 1, the temperature control module 2, the plasma treatment module 3, and the terminal sampling module 4.

[0044] That is, when sewage needs to be treated, it will first flow through the sewage information collection module 1, so that the sewage information collection module 1 can collect sewage information and obtain sewage information collection results. At the same time, the sewage information collection results will be transmitted to the distributed plasma control module 7, and the distributed plasma control module 7 will obtain a control plan for the temperature control module 2 and the plasma treatment module 3 based on the sewage information collection results.

[0045] Afterwards, the sewage flows through the temperature control module 2, so that the temperature control module 2 heats the sewage according to the control of the distributed plasma control module 7, so that the temperature of the sewage is within a reasonable range, ensuring the sewage treatment capacity of the plasma treatment module 3.

[0046] After the sewage flows through the temperature control module 2 , it will flow through the plasma processing module 3 , so that the plasma processing module 3 cleans the sewage under the control of the distributed plasma control module 7 .

[0047] After passing through the plasma treatment module 3, the wastewater flows through the terminal sampling module 4, where it collects wastewater information and obtains wastewater information collection results. Simultaneously, this wastewater information collection result is transmitted to the distributed plasma control module 7, which then determines a control plan for the temperature control module 2 and the plasma treatment module 3 based on this wastewater information collection result.

[0048] Obviously, since the sewage will continuously flow through the above-mentioned sewage information collection module 1, temperature control module 2, plasma treatment module 3, and terminal sampling module 4, the distributed plasma control module 7 can continuously adjust the control scheme of the temperature control module 2 and the plasma treatment module 3 in real time based on the sewage information collection results.

[0049] Among them, the above-mentioned sewage information collection module 1: the front end is connected to the water storage tank and the filter net to filter large particles; the back end is connected to the sewage pipe to collect several key indicators such as pH value, temperature, organic matter type and concentration, and transmits the sewage information collection results collected in real time to the distributed plasma control module 7.

[0050] The temperature control module 2 is composed of a heating component, an air-cooling component, and a U-shaped pipe. According to the type and concentration of different organic matter, the heating component and the air-cooling component are controlled to maintain the wastewater flowing in the U-shaped pipe within the target set temperature range. By integrating the temperature, pH value, pollutant type, and concentration parameters, the plasma treatment module 3 is controlled by the distributed plasma control module 7 to achieve the best effect during the plasma treatment process.

[0051] Therefore, through the above system, it is possible to control the temperature control module 2 and the plasma treatment module 3 according to the sewage information collection results of the terminal sampling module 4, so as to automatically adjust the sewage treatment according to the feedback of the treatment results.

[0052] The distributed plasma control module 7 includes a controller, see Figure 3 The plasma treatment module 3 includes a spray device 8, a high-voltage power supply 12, and a vertically parallel array of plasma wastewater treatment components 9 and a negative plate 10. The array of plasma wastewater treatment components 9 is connected to the positive electrode of the high-voltage power supply 12, and the negative plate 10 is connected to the negative electrode of the high-voltage power supply 12. The spray device 8 and the high-voltage power supply 12 are both connected to the controller. Figure 4 The nozzle of the spray device 8 is located above the sewage treatment area, which is the area between the array of plasma sewage treatment components 9 and the negative electrode plate 10. The array of plasma sewage treatment components 9 and the negative electrode plate 10 are used to ionize air, generating a low-temperature plasma for cleaning the sewage within the sewage treatment area. A high-voltage power supply 12 is used to power the array of plasma sewage treatment components 9 and the negative electrode plate 10 under the control of a controller. The spray device 8 is used to spray sewage into the sewage treatment area under the control of the controller.

[0053] Specifically, an array of plasma wastewater treatment components 9 and a negative plate 10 are provided, and the array of plasma wastewater treatment components 9 and the negative plate 10 are provided vertically and in parallel. That is to say, when the array of plasma wastewater treatment components 9 and the negative plate 10 are provided, the array of plasma wastewater treatment components 9 and the negative plate 10 need to be provided in a vertical state, and the planes where the array of plasma wastewater treatment components 9 and the negative plate 10 are located are parallel.

[0054] Moreover, the array-arranged plasma sewage treatment components 9 are connected to the positive pole of the high-voltage power supply 12, the negative plate 10 is connected to the negative pole of the high-voltage power supply 12, and the space area between the array-arranged plasma sewage treatment components 9 and the negative plate 10 is set as the sewage treatment area. At this time, when the high-voltage power supply 12 is powered on, since the array-arranged plasma sewage treatment components 9 are parallel to the negative plate 10, the air in the sewage treatment area can be ionized to obtain low-temperature plasma.

[0055] The nozzle of the spray device 8 is located above the sewage treatment area. When the spray device 8 sprays water, the sewage will fall into the sewage treatment area due to gravity, and then leave the sewage treatment area due to gravity. During this process, the low-temperature plasma in the sewage treatment area can clean the sewage.

[0056] Moreover, a collecting device may be provided below the sewage treatment area. After the sewage sprayed by the spraying device 8 passes through the above-mentioned sewage treatment area, it will be collected by the collecting device below and enter the sewage pipe.

[0057] Thus, by providing a plasma treatment module 3 including a vertically parallel array of plasma sewage treatment components 9 and a negative electrode plate 10, the array of plasma sewage treatment components 9 and the negative electrode plate 10 ionize the air to obtain a low-temperature plasma, and the low-temperature plasma is used to clean the sewage in the sewage treatment area, and the sewage is sprayed into the sewage treatment area through the spray device 8. Since the sewage is sprayed into the sewage treatment area by the spray device 8, the sewage will enter the sewage treatment area in the form of water droplets, trickles, sprays, etc., thereby expanding the effective contact area between the sewage and the low-temperature plasma and shortening the treatment time. In other words, by providing the spray device 8, the sewage cleaning capacity can be further improved.

[0058] Among them, the above-mentioned spraying device 8 can be composed of a controller, a pressure valve, a pipeline and a dripper, so that the sewage can fall evenly in different forms such as water droplets, trickles, sprays, etc., and pass through the sewage treatment area where plasma discharge is performed between the negative plate 10 and the array-arranged plasma sewage treatment components 9, fully mixing the plasma discharge medium gas and air, and utilizing the biochemical effect of plasma to complete sewage treatment.

[0059] The distributed plasma control module 7 controls the spray device 8 , including controlling the size, speed, and spacing between water droplet lines, and the control can also be adjusted in real time based on the sewage information collection results of the terminal sampling module 4 .

[0060] See also Figure 5 and Figure 6 The array-arranged plasma wastewater treatment component 9 includes multiple low-temperature plasma generating units 11, a first drive controller, a first motor and a first displacement component. The low-temperature plasma generating unit 11 is connected to the positive pole of the high-voltage power supply 12, and the first drive controller is connected to the controller; wherein the low-temperature plasma generating unit 11 is used to ionize air with the negative plate 10; the first drive controller is used to control the first motor under the control of the controller, so as to drive the first displacement component to vertically move the low-temperature plasma generating unit 11 through the first motor.

[0061] Specifically, the array-arranged plasma wastewater treatment assembly 9 includes a plurality of low-temperature plasma generating units 11 and a vertical motion module 13 . The vertical motion module 13 includes a first drive controller, a first motor, and a first displacement assembly.

[0062] The low-temperature plasma generating unit 11 is connected to the positive electrode of the high-voltage power supply 12 and is used to ionize air together with the negative plate 10 to generate low-temperature plasma. The vertical motion module 13 is a unit that controls the vertical movement of the low-temperature plasma generating unit 11. Obviously, since the array-arranged plasma wastewater treatment components 9 are vertically arranged, the vertical movement of the low-temperature plasma generating unit 11 means controlling the low-temperature plasma generating unit 11 to move on the plane where the array-arranged plasma wastewater treatment components 9 are located. In other words, if the perspective is facing the plane where the array-arranged plasma wastewater treatment components 9 are located, the vertical motion module 13 can control the low-temperature plasma generating unit 11 to move up and down, left and right, diagonally upward, and diagonally downward. Moreover, since there are multiple low-temperature plasma generating units 11, the first displacement component can move each low-temperature plasma generating unit 11 in a different direction and speed when moving the low-temperature plasma generating unit 11.

[0063] Thus, an array-arranged plasma wastewater treatment component 9 is provided, comprising a plurality of low-temperature plasma generating units 11, a first drive controller, a first motor and a first displacement component. The low-temperature plasma generating unit 11 is connected to the positive pole of the high-voltage power supply 12, and the first drive controller is connected to the controller; wherein the low-temperature plasma generating unit 11 is used to ionize air with the negative plate 10; the first drive controller is used to control the first motor under the control of the controller, so as to drive the first displacement component to vertically move the low-temperature plasma generating unit 11 through the first motor. Since the array-arranged plasma wastewater treatment assembly 9 includes a plurality of low-temperature plasma generating units 11 and a vertical motion module 13, in the above-mentioned wastewater treatment area, the area where low-temperature plasma is actually generated for wastewater treatment is the area between the low-temperature plasma generating unit 11 and the negative plate 10. Therefore, by moving the low-temperature plasma generating unit 11 through the vertical motion module 13, the plasma wastewater treatment area can be changed, thereby achieving better wastewater treatment capacity. For example, if the wastewater to be treated does not require a very high low-temperature plasma concentration, the interval between the low-temperature plasma generating units 11 can be increased, thereby expanding the area where low-temperature plasma will be generated, thereby achieving faster wastewater cleaning. If the wastewater to be treated requires a very high low-temperature plasma concentration, the interval between the low-temperature plasma generating units 11 can be reduced, thereby increasing the concentration of the low-temperature plasma and improving the wastewater cleaning capacity.

[0064] The vertical motion module 13 comprises a first drive controller, a first motor, and a first displacement assembly. The first drive controller is connected to the controller in the distributed plasma control module 7 via a bus. It provides real-time feedback on parameters such as position, speed, and operating mode. It also receives position control commands, regulates the first motor, and drives the first displacement assembly to move the low-temperature plasma generating units 11 to a specified position, thereby adjusting the vertical distance between adjacent groups of low-temperature plasma generating units 11. The vertical motion module 13 has a motion control accuracy of 1mm, enabling precise control of the plasma wastewater treatment area. The first displacement assembly includes but is not limited to a lead screw, hinge, and toothed belt, while the first motor includes but is not limited to a servo motor, drive motor, or stepper motor.

[0065] Optionally, the array-arranged plasma wastewater treatment components 9 further include a second drive controller, a second motor and a second displacement component, and the second drive controller is connected to the controller; wherein the second drive controller is used to control the second motor under the control of the controller, so as to drive the second displacement component through the second motor to change the distance between the array-arranged plasma wastewater treatment components 9 and the negative plate 10.

[0066] Specifically, the array-arranged plasma wastewater treatment components 9 also include a horizontal motion module 14, which includes a second drive controller, a second motor and a second displacement component. Through the second displacement component, the distance between the array-arranged plasma wastewater treatment components 9 and the negative plate 10 can be changed. That is to say, if the perspective is facing the plane where the array-arranged plasma wastewater treatment components 9 are located, the above-mentioned horizontal motion module 14 can control the back and forth movement of the above-mentioned array-arranged plasma wastewater treatment components 9.

[0067] Since the above-mentioned array-arranged plasma sewage treatment components 9 are connected to the positive pole of the high-voltage power supply 12, and the above-mentioned negative plate 10 is connected to the negative pole of the high-voltage power supply 12, when the high-voltage power supply 12 is powered on, an electric field will be formed between the array-arranged plasma sewage treatment components 9 and the negative plate 10, and the electric field will ionize the air. Since the electric field strength is inversely proportional to the distance between the electrodes, the distance between the array-arranged plasma sewage treatment components 9 and the negative plate 10 can be adjusted by the above-mentioned horizontal motion module 14 to change the ability to ionize the air, thereby achieving flexible and controllable plasma sewage treatment intensity, and the ionization air capacity can be adjusted in real time according to actual conditions to ensure that the ionization effect is in the best state, thereby achieving better sewage treatment capacity.

[0068] The horizontal motion module 14 comprises a second drive controller, a second motor, and a second displacement assembly. The second drive controller is connected to the controller in the distributed plasma control module 7 via a bus. It provides real-time feedback on parameters such as position, speed, and operating mode. It also receives position control commands, regulates the second motor, and drives the second displacement assembly to move the arrayed plasma wastewater treatment assemblies 9 to a specified position, adjusting the plasma discharge gap between the horizontally arrayed plasma wastewater treatment assemblies 9 and the negative plate 10. The horizontal motion module 14 has a motion control accuracy of 1 mm, enabling flexible and controllable plasma wastewater treatment intensity. The second displacement assembly includes, but is not limited to, a lead screw, a hinge, a toothed belt, and the like. The second motor includes, but is not limited to, a servo motor, a drive motor, a stepper motor, and the like.

[0069] Optionally, the low-temperature plasma generating unit 11 includes an electrode array assembly 16 and a life detection module 15. The electrode array assembly 16 is connected to the positive pole of the high-voltage power supply 12 for air ionization, and the life detection module 15 is connected to the electrode array assembly 16 for performing life detection on the electrode array assembly 16.

[0070] Specifically, the lifetime detection module 15 comprises a sampling circuit, an isolation circuit, a microcontroller, and an interface transmission circuit. It samples the conductivity of the electrodes in the electrode array assembly 16 and determines the remaining lifetime of the electrodes based on the lifetime-conductivity relationship curve of the electrode material. Furthermore, the collected lifetime information of each low-temperature plasma generating unit 11 is fed back to the distributed plasma control module 7. The interface transmission circuit utilizes optical fiber communication for isolation. The microcontroller is preferably a 32-bit embedded microprocessor, but is not limited to other chips such as DSPs and FPGAs.

[0071] The above-mentioned electrode array assembly 16 is a device for converting the high-voltage energy output by the high-voltage power supply 12 into plasma. The components are divided into: a power shunt module and an electrode array module. The power shunt module is divided into a main circuit buried resistance type, a branch circuit buried resistance type, and a straight-through type. The straight-through type means that the high-voltage energy directly acts on the electrode without attenuation. The main circuit buried resistance means that a 10Ω-10kΩ resistor is connected in series on the main circuit of the input high-voltage power, and the rear end of the resistor is connected to each output electrode. The branch circuit buried resistance type means that a 10Ω-10kΩ resistor is connected in series on the front end of each electrode. Electrode array module: The carrier of the electrode needle is divided into a 10-120-pin strip array module, which adopts a single-row arrangement form, a 40-120-pin square array module, which adopts an equidistant array arrangement form, and a 20-120-pin rectangular array module, which adopts a (2-10)×N array arrangement form. The electrode needle spacing is 2-5 cm, the electrode needle has a diameter of 0.8-1.5 mm, and is made of gold-plated metal. The metal includes but is not limited to copper, iron, aluminum, stainless steel, etc.

[0072] Furthermore, a life detection interface 17 is required. This life detection interface 17 is connected to the life detection module 15 via a wired connection. A rotating snap-on connection is used. The connecting cable is detachable. The interface is divided into a power sampling portion and a signal communication portion. The power supply voltage input is DC5V, and differential sampling mode is used. The signal communication portion uses interface protocols such as RS232C and RS485 to exchange information with the life monitoring device 15.

[0073] Therefore, by setting up the electrode array assembly 16, plasma discharge can be achieved through small, low-power electrode needles, the generation efficiency of low-temperature plasma can be improved, and the index requirements of a single high-voltage power supply can be reduced. Moreover, by setting up the life detection module 15 to perform life detection on the electrode array assembly 16, electrode needles with insufficient life can be discovered in time, thereby ensuring that the electrode array assembly 16 is always in the best condition.

[0074] It should be noted that in Figure 5 and Figure 6In the embodiment, an array-type plasma wastewater treatment component 11 is provided, which includes a vertical motion module 13, a horizontal motion module 14, a life detection module 15, and an electrode array component 16. However, in actual applications, it is possible to choose between them according to actual conditions. For example, when the quality of the wastewater is relatively fixed, at least one of the vertical motion module 13 and the horizontal motion module 14 can be discarded, and only the life detection module 15 can be used to perform life detection on the electrode array component 16. For another example, the electrode array component 16 can be replaced with other equipment to connect the positive pole of the high-voltage power supply 12. For another example, when the installation space is relatively narrow, the horizontal motion module 14 can be discarded. For another example, when it is expected that the system only needs to be used temporarily, the life detection module 15 can be discarded to further reduce costs.

[0075] See also Figure 7 The sewage treatment system 100 further includes: a thermal management module 5 , which is connected to the temperature control module 2 and the plasma processing module 3 and is used to adjust the temperature of the temperature control module 2 and the plasma processing module 3 .

[0076] The thermal management module 5 is composed of a heat sink, a fan, and an air duct. The heat sink used in the temperature control module 2 is covered with thermally conductive silicone, transferring heat to a large aluminum heat sink. The heat sink used in the high-voltage power supply 12 in the plasma processing module 3 uses an aluminum heat sink for contact cooling. The fan removes heat through the air duct and dissipates it outside the device. It also draws low-temperature air from outside the device into the air duct to continuously dissipate heat from the heat-generating area. Furthermore, the air duct continuously refreshes the air between the arrayed plasma wastewater treatment components 9 and the negative plate 10 to ensure efficient low-temperature plasma generation.

[0077] The sewage treatment system 100 further includes a power supply module 6 connected to the temperature control module 2 , the plasma processing module 3 and the distributed plasma control module 7 , for supplying power to the temperature control module 2 , the plasma processing module 3 and the distributed plasma control module 7 .

[0078] Among them, the above-mentioned power supply module 6 is connected to an external energy source (battery, mains power supply), has a wide voltage input, isolating from the outside and reducing the interference, noise and surge caused by the external mains power supply; it generates multiple power supply levels internally to provide the temperature control module 2, plasma processing module 3 and distributed plasma control module 7 with their respective required power supplies.

[0079] The distributed plasma control module 7 further includes: a storage device for storing a pre-treatment scheme, wherein the pre-treatment scheme includes a scheme for controlling the temperature control module 2 and the plasma treatment module 3 generated by the controller according to the sewage information collection result.

[0080] Specifically, the distributed plasma control module 7 integrates human-computer interaction, data storage, process monitoring, and consumable life management functions; the distributed plasma control module 7 provides users with equipment parameter configuration, fault list recording, sewage treatment energy flow monitoring, effective treatment dose calculation, and dynamic process display. The information received by the distributed plasma control module 7 includes the type, concentration, pH value, and temperature information of the sewage pollutants input by the sewage information acquisition module 1, the type, concentration, pH value, and temperature parameters of the pollutants in the treated sewage fed back by the terminal sampling module 4, and the real-time voltage and current data fed back by the high-voltage power supply 12. Based on the received information, the distributed plasma control module 7 needs to automatically control the vertical spacing and horizontal discharge distance of each low-temperature plasma generating unit 11 in the plasma treatment module 3 and the power supply parameters (voltage, current, power, frequency, and duty cycle) of the high-voltage power supply 12 through the low-temperature plasma intelligent control algorithm to achieve optimal sewage treatment efficiency. In addition, the distributed plasma control module 7 also needs to monitor the equipment operation status information, maintenance information, and consumable life information internally.

[0081] The following is an explanation based on a specific workflow.

[0082] Specifically, the sewage treatment system 100 is connected to an external energy source through the power supply module 6, and the sewage treatment system 100 starts to start. Thereafter, the sewage treatment system 100 performs the following steps.

[0083] First, the power supply module 6 starts self-test to check whether the output of each power configuration module has reached the power supply requirement, waits for the power supply to stabilize, and starts the power supply output: First, the power supply starts the distributed plasma control module 7, and controls the power supply module 6 to start the power output in sequence; on the one hand, the power output supplies power to the fan and heating device in the temperature control module 2 through the power supply cable; on the other hand, a distributed board card plug-in design mode is adopted to supply power to multiple sets of high-voltage power supplies 12, vertical motion module 13, horizontal motion module 14, and life detection module 15 in the plasma processing module 3.

[0084] Second, the distributed plasma control module 7 determines whether the power supply of each module is normal by reading the status information of the power supply module 6. If not, a power supply fault message is given. If normal, the distributed plasma control module 7 reads the life information of the low-temperature plasma generating unit 11 through the life detection module 15 in the plasma processing module 3, reads the status information of the high-voltage power supply 12, the parameter configuration information of each sensor in the sewage information acquisition module 1, the status information of the cooling and heating components in the temperature control module 2, and the sensor configuration information in the terminal sampling module 4. At the same time, the system retrieves the device configuration information, fault information, and life information of key components in the storage device to determine whether each module meets the requirements for continuing to work. For components that do not meet the working requirements, the system will prompt the user to maintain or replace them, and synchronize the distributed plasma control module 7 to display them on the human-computer interaction interface of the distributed plasma control module 7.

[0085] Third, sewage information collection: In the first step, the sewage information collection module 1 collects four key indicators of sewage pH value, temperature, organic matter type and concentration through sensors distributed in the pipeline, and transmits them to the distributed plasma control module 7. The system automatically generates a sewage pretreatment plan by analyzing and calculating the data collected by the sewage information collection module 1 and the sewage discharge standards required by laws and regulations.

[0086] Fourth, the formulation of the sewage treatment plan: the automatically generated pre-treatment plan is displayed on the software interface of the distributed plasma control module 7. The pre-treatment plan includes: the control temperature of the temperature control module 2, the gas flow rate of the air in the plasma discharge area for updating the thermal management module 5, the flow rate of the spray device 8, the sewage form, the voltage, current, frequency, and duty cycle configuration parameters of each group of high-voltage power supplies 12, the working time parameters of the low-temperature plasma generating unit 11, the spatial position parameters of the vertical motion module 13, the spatial position parameters of the horizontal motion module 14, and the emission indicators of the main pollutants in the sewage after treatment. The user can adjust the specific numerical range of the above parameters by himself. During the adjustment process, the system assists the user through graphics, text, voice, and video media, and forms the execution parameters of the sewage treatment. The parameters include sewage treatment temperature, array high-voltage power supply parameters, plasma discharge spacing, and the distance between low-temperature plasma generating units 11. The final plan will be stored in the storage device in the distributed plasma control module 7. The next time the user logs in, the displayed plan can be directly called or adjusted again.

[0087] Fifth, start the process. First, click the start button on the software interactive interface of the distributed plasma control module 7. The temperature control module 2 starts the cooling or heating function according to the sewage temperature requirements in the formulated plan to maintain the temperature of the sewage to be treated within the set range of the plan. After the temperature is reached, the distributed plasma control module 7 sends the instruction to the plasma processing module 3 through the control signal bus. The plasma processing module 3 starts. In the first step, the array-arranged plasma sewage treatment component 9 is started. First, according to the plasma discharge spacing in the plan issued by the distributed plasma control module 7 and the distance parameters between the low-temperature plasma generating units 11, the vertical motion module 13 and the horizontal motion module 14 are controlled to move to the specified position; secondly, each group of high-voltage power supplies 12 starts to pre-install the voltage, current, frequency, and duty cycle parameters set in the plan, and feeds back the status of each group of high-voltage power supplies 12 to the distributed plasma control module 7 in real time through the bus; secondly, the spray device 8 controls the pressure valve and the dripper according to the instruction to spray the sewage in accordance with the form and flow parameter requirements of the plan, between the array-arranged plasma sewage treatment component 9 and the negative The wastewater flows between the electrodes 10; in the third step, the valves of the spray device 8 and the groups of high-voltage power supplies 12 are activated, and wastewater treatment begins; in the fourth step, the system is automatically controlled. The terminal sampling module 4 collects the pH value, temperature, organic matter type, and concentration index of the treated water in real time, and transmits the data to the distributed plasma control module 7. Based on the treated wastewater parameters, combined with the wastewater information sampling data and the real-time output data of the groups of high-voltage power supplies 12 on the array-arranged plasma wastewater treatment components 9, the comprehensive treatment intensity of the plasma treatment module 3 is dynamically and intelligently adjusted. When the data feedback from the terminal sampling module 4 is lower than the expected treatment result of the solution, the distributed plasma control module 7 increases the output voltage and current of the high-voltage power supply 12 according to the control algorithm, controls the horizontal motion module 14 to reduce the spacing to increase the plasma treatment intensity; intelligently adjusts the vertical motion module 13, and changes the density of the low-temperature plasma by controlling the groups of low-temperature plasma generating units 11 to give full play to the biochemical effects of short-lived substances in the low-temperature plasma; and intelligently controls the thermal management module 5 to refresh the air in the plasma discharge area and increase the generation efficiency of the low-temperature plasma. When the data fed back by the terminal sampling module 4 is higher than the expected processing result of the solution, first, the system will appropriately increase the sewage flow of the spray device 8 to save the sewage treatment time of the device system; second, it will appropriately reduce the output voltage and current parameters of some high-voltage power supplies 12 or shut down some high-voltage power supplies 12 to reduce energy consumption.

[0088] Sixth, click the stop button on the control interface of the distributed plasma control module 7, the entire sewage treatment process ends, and the sewage treatment system 100 waits for the next activation.

[0089] Among them, the above-mentioned plasma treatment module 3 is used to perform precise low-temperature plasma treatment on sewage. First, the flow rate, pressure, and water flow form (water droplets, trickles, sprays) of the sewage entering are regulated according to the third target control parameter given by the distributed plasma control module 7. The plasma treatment module 3 uses air as the plasma generating medium gas and uses a spray device 8 to control the sewage flow rate, pressure and water flow form to facilitate full contact between the sewage and the air; second, the working parameters of the array-arranged plasma sewage treatment components 9 are controlled according to the first target control parameter, the second target control parameter and the fourth target control parameter. By controlling the discharge distance, the spacing of the electrode array, and the voltage and current parameters of each high-voltage power supply 12, the physical and chemical state of the sewage at each level from top to bottom is fully reacted.

[0090] The above-mentioned terminal sampling module 4 collects the pH value, temperature, type of organic matter, and concentration parameters of the water sample after being processed by the plasma treatment module 3, and feeds them back to the distributed plasma control module 7. The distributed plasma control module 7, through analysis and calculation, on the one hand, adjusts the temperature control module 2 to adjust the sewage temperature; on the other hand, it adjusts the power supply parameters (voltage, current, power, frequency, duty cycle) of the high-voltage power supply 12 at different height levels in the plasma treatment system; through the vertical motion module 13, it adjusts the spacing between each low-temperature plasma generating unit 11; through the horizontal motion module 14, it adjusts the spacing between the arrayed plasma sewage treatment components 9 and the negative plate 10, thereby dynamically adjusting the sewage treatment effect.

[0091] The array-arranged plasma wastewater treatment assembly 9 is composed of a low-temperature plasma generating unit 11, a high-voltage power supply 12, a vertical motion module 13, a horizontal motion module 14, and a life detection module 15. It realizes precise and uniform plasma treatment of wastewater. Through precise control of plasma discharge, the wastewater can receive plasma treatment at different levels and intensities from top to bottom, giving full play to the biochemical effects of short-lived substances in the low-temperature plasma. Secondly, it realizes monitoring of the life of the discharge electrode, adopts a conductivity calculation algorithm, and provides a replacement prompt for the low-temperature plasma generating unit 11 with expired life, thereby improving the efficiency of plasma generation.

[0092] The negative plate 10 is made of stainless steel, arranged one-to-one with the low-temperature plasma generating unit 11, and connected to the negative pole of the high-voltage power supply 12. Low-temperature plasma is generated between the negative plate 10 and the low-temperature plasma generating unit 11.

[0093] Low-temperature plasma generating unit 11: consists of a high-voltage connection interface 18, a life detection interface 17, and four sets of electrode array components 16; it uses the principle of high-voltage ionization of air to generate low-temperature plasma, and at the same time collects the life information of the electrode array and transmits it to the distributed plasma control module 7 via RS485 and RS232C communication protocols; the system provides information such as the remaining life time and the warning replacement time, and prompts it on the human-computer interaction interface.

[0094] High-voltage connection port 18: Connects to the high-voltage power supply 12 to divert high-voltage energy. A rotating, embedded design ensures a secure connection. There are 1x4 connectors. When connecting male and female connectors, the contact area should be kept away from the high-voltage area, with an air creepage distance greater than 10 cm. The connector is made of hard plastic and has an insulation withstand voltage rating of 50 kV DC.

[0095] The array-arranged plasma wastewater treatment assembly 9 is characterized by comprising several groups of low-temperature plasma generating units 11 and high-voltage power supplies 12 fixed to a carrier. Each group of high-voltage power supplies 12 is independently controlled, and the output parameters of the high-voltage power supplies 12 can be adjusted based on the real-time wastewater treatment results. Adjustable parameters include but are not limited to voltage, current, frequency, and duty cycle. The carrier can be made of various materials depending on the wastewater characteristics, including but not limited to insulating materials such as plastic, acrylic, ceramic, alumina, mullite, heat-resistant glass, and quartz. Under the control of a horizontal motion module 14, the carrier can adjust the distance between the low-temperature plasma generating units 11 and the negative plate 10, thereby adjusting the discharge spacing of the electrode array assembly 16 and thereby adjusting the overall plasma generation intensity. The arrangement of the low-temperature plasma generating units 11 is not limited to horizontal or vertical arrangements; their spacing can be adjusted under the control of a vertical motion module 13 to adjust the density of the plasma discharge. The portion of the negative plate 10 facing the low-temperature plasma generating units 11 is designed with a metal flat surface, while other areas can be hollow or openwork.

[0096] Distributed plasma control module 7: Its features include user human-computer interaction and intelligent control, and it consists of a display component, an installation platform, an interface board, and a storage device. The system provides users with equipment parameter configuration, consumable parts life monitoring information, fault list records, sewage treatment plan configuration management, and sewage treatment records. The module internally monitors equipment operating status information, maintenance information, and consumable life information. The system can be configured with 1-9 plasma processing modules 3, and equipment function configuration, component configuration, and interface configuration can use XML or JSON configuration files. Storage devices include but are not limited to NOR Flash (NOR Flash Memory, or non-flash memory), NAND Flash (NAND Flash Memory, and non-flash memory), and EEPROM (Electrically Erasable Programmable Read-Only Memory). Its installation platform (i.e., the above-mentioned controller) includes but is not limited to embedded all-in-one computers, touch-screen all-in-one computers, general-purpose computer platforms, and separate computer platforms. Operating systems include but are not limited to Android, Linux, and Unix.

[0097] The electrode array assembly 16 is divided into: a power shunt module and an electrode array module, wherein the power shunt module is divided into a main circuit buried resistance type, a branch circuit buried resistance type, and a straight-through type; wherein the straight-through type means that the high-voltage energy acts directly on the electrode without attenuation; the main circuit buried resistance means that a 10Ω-10kΩ resistor is connected in series on the main circuit of the input high-voltage power, and the rear end of the resistor is connected to each output electrode; the branch circuit buried resistance type means that a 10Ω-10kΩ resistor is connected in series on the front end of each electrode; the electrode array module: the carrier of the electrode needle is divided into a 10-120-pin strip array module, which adopts a single-row arrangement form, a 40-120-pin square array module, which adopts an equidistant array arrangement form, and a 20-120-pin rectangular array module, which adopts a (2-10)×N array arrangement form; the electrode needle spacing is 2-5cm, the electrode needle has a diameter of 0.8-1.5mm, and is made of gold-plated metal. The metal material includes but is not limited to copper, iron, aluminum, stainless steel, etc.

[0098] The power supply module 6, which includes both battery and mains power, isolates and mitigates interference, noise, and surges from the external mains power supply. It also generates multiple power levels internally to provide the required power for the distributed plasma control module 7, temperature control module 2, and plasma processing module 3. It consists of a mains power anti-interference module and a low-voltage power design module. The mains power anti-interference module, comprised of fuses, filters, and active noise reduction analog circuits, effectively isolates mains power interference, surges, and EFT. Batteries include, but are not limited to, lead-acid batteries, lithium-ion batteries, and sodium-ion batteries. The low-voltage power supply design adopts a wide input voltage of AC 110V-240V and DC 12V-36V. The main power conversion circuit adopts active PFC (Power Factor Correction) design, which can independently adjust the power distribution of the entire power supply network. The power supply module 6 adopts a plug-in interface design. When adding power to a new subsystem, the low-voltage power conversion module can be directly added without adjusting the hardware parameters of the main power conversion circuit. The output range of the main power conversion circuit is 50VA-2000VA. The low-voltage power conversion module includes but is not limited to 3.3V, 5V, 12V, and 24V DC-DC modules.

[0099] The high-voltage power supply 12 utilizes a boost-type V / F control architecture, an active PFC circuit design, a full-bridge push-pull drive circuit composed of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), and a drive network consisting of a high-frequency transformer. This allows for frequency, amplitude, duty cycle, and input power regulation. Based on the voltage, current, frequency, and duty cycle parameters transmitted by the distributed plasma control module 7, it converts DC to AC energy types and samples and feeds back real-time voltage and current data from the high-voltage output. A high-voltage DC power supply is preferred, but not limited to AC or pulsed high-voltage power supplies. Low-power power supplies can improve energy conversion efficiency and reduce energy consumption. The input uses a low-voltage AC power supply with a wide input voltage range of 12VAC-36VAC and an operating frequency of 30kHz-200kHz. Voltage conversion utilizes a high-frequency horizontal transformer for isolation. The primary bobbin is made of epoxy tubing and the winding is made of copper tape. The secondary outputs are two-way, with a polycarbonate rod multi-slot bobbin and QA-1 / F winding. Input and output isolation is 30kV DC. Fiber optic communication is used between the internal low-voltage control area and the high-voltage output data acquisition area. Digital control is supported, supporting RS232, RS485, and Modbus protocols. Monitoring covers lifespan, overvoltage, overcurrent, overpower, output voltage, output current, and operating status. This includes, but is not limited to, DC high-voltage, AC high-voltage, and pulsed high-voltage power supplies. The DC high-voltage power supply has an output voltage range of 15kV-30kV and a current range of 0-10mA. Pulse high voltage power supply 12 output range: pulse voltage range 10-30kV, pulse current range 0-10mA, output power range 0-300w, adjustable frequency range 10Hz-20KHz, adjustable duty cycle range 10%-80%.

[0100] The life detection module 15, consisting of a sampling circuit, an isolation circuit, a microcontroller, and an interface transmission circuit, performs life detection on the electrode array in the low-temperature plasma generating unit 11. The sampling circuit includes, but is not limited to, a 16-bit AD sampling chip and an RLC reference circuit, which samples the resistance of each electrode array assembly 16 when the high-voltage power supply 12 is off. The isolation circuit includes, but is not limited to, an optocoupler and a push-pull circuit design to isolate interference between the sampling circuits. The microcontroller converts the resistance data collected from each electrode array assembly 16 into conductivity, calculates the remaining electrode life based on a configuration file-based algorithm for electrode needle life and conductivity, numbers each electrode array assembly 16, and transmits data according to a custom data composition protocol. The interface transmission circuit utilizes a fiber optic conversion circuit design and fiber optic transmission to isolate the high-voltage discharge area from the low-voltage control area, improving the device's overall anti-interference capability. The push-pull circuit includes, but is not limited to, a transistor or MOS transistor. The microprocessor is preferably an embedded microprocessor, including but not limited to a single chip microcomputer, a DSP (Digital Signal Processor), and an FPGA (Field-Programmable Gate Array).

[0101] The thermal management module 5, consisting of heat dissipation components, a fan, and an air duct, has two main functions. First, it cools the device. The temperature control module 2 is covered with thermally conductive silicone to conduct heat to a large aluminum heat sink. The high-voltage power supply 12 in the plasma processing module 3 uses an aluminum heat sink for contact heat dissipation. The fan removes heat through the air duct and dissipates it outside the device. It also draws low-temperature air from outside the device into the air duct to continuously dissipate heat from the heat-generating area. Second, it circulates air to increase the efficiency of low-temperature plasma generation. The plasma processing module 3 uses air as the medium gas. As plasma continues to be generated, a large amount of nitrogen and oxygen in the air is ionized, forming RONS, which undergoes biochemical reactions with the wastewater. This changes the composition of the original air and affects the efficiency of plasma generation. Therefore, the air between the arrayed plasma wastewater treatment components 9 and the negative plate 10 is continuously refreshed through the air duct to ensure the efficiency of low-temperature plasma generation. Heat dissipation components include, but are not limited to, thermally conductive silicone, aluminum heat sinks, water-cooled or liquid-cooled heat pipes, etc.

[0102] In summary, the sewage treatment system of the embodiment of the present invention includes a distributed plasma control module, a water information collection module and a plasma treatment module, the plasma treatment module includes a negative plate and an array of plasma sewage treatment components, the plasma sewage treatment component includes a high-voltage power supply, a low-temperature plasma generating unit and a vertical motion module, the electrode in the low-temperature plasma generating unit is connected to the positive electrode of the high-voltage power supply and is arranged opposite to the negative plate, and the negative plate is connected to the negative electrode of the high-voltage power supply; wherein, the distributed plasma control module is connected to the water information collection module and each vertical motion module respectively, and is used to determine the first target control parameter of each vertical motion module according to the sewage information before treatment and the sewage information after treatment collected by the water information collection module, and control the corresponding vertical motion module to drive the corresponding low-temperature plasma generating unit to move vertically according to the first target control parameter to adjust the plasma treatment density. Thus, by controlling the vertical motion module to drive the low-temperature plasma generating unit to move vertically, the plasma treatment density can be adjusted, the area where sewage treatment can be performed can be changed, and thus better sewage treatment capacity can be achieved. Furthermore, the end-point sampling module enables flexible adjustment of the plasma treatment intensity and density based on wastewater data collected and processed by the backend. By adjusting the output parameters of each high-voltage power supply, the spacing between the low-temperature plasma generating units, and the discharge gap, the system can fully leverage the biochemical effects of short-lived substances in each plasma layer. Furthermore, the distributed plasma control module integrates a display component, mounting platform, interface board, storage device, and intelligent auxiliary system software. This module can create a wastewater treatment information archive and interact with the plasma treatment module, temperature control module, and thermal management module for coordinated control, enhancing intelligence and enabling the implementation of treatment plans for different wastewater types and physical states. Furthermore, a lifespan monitoring device, based on a conductivity-lifespan algorithm for different materials, measures the lifespan of the high-voltage discharge electrodes and prompts replacement through the system software interface, ensuring efficient and safe plasma generation. Furthermore, the high-voltage power supply utilizes a compact, low-power, and high-efficiency design. Combined with the plasma discharge structure of an array of electrode needles, this design improves plasma generation efficiency while reducing the performance requirements of a single high-voltage power supply, significantly enhancing power efficiency. Furthermore, a spray structure transforms wastewater into droplets for plasma treatment, increasing the effective contact area between wastewater and the low-temperature plasma and shortening treatment time.

[0103] Furthermore, the present invention provides a sewage treatment method.

[0104] The sewage treatment method according to the embodiment of the present invention is used in the sewage treatment system 100 according to the above embodiment.

[0105] Figure 8 4 is a flow chart of a sewage treatment method according to an embodiment of the present invention.

[0106] like Figure 8 As shown, the sewage treatment method includes:

[0107] S81, collecting sewage information to obtain sewage information before treatment and sewage information after treatment.

[0108] S82, controlling the low-temperature plasma generating unit to move vertically according to the sewage information before and after treatment to adjust the plasma treatment density, and using the plasma generated by the low-temperature plasma generating unit to treat the sewage.

[0109] It should be noted that for other specific implementations of the sewage treatment method according to the embodiment of the present invention, reference may be made to the sewage treatment system 100 of the above embodiment.

[0110] The sewage treatment method of the embodiment of the present invention can adjust the plasma treatment density and change the area where sewage treatment can be performed by controlling the vertical movement of the low-temperature plasma generating unit, thereby achieving better sewage treatment capacity.

[0111] Furthermore, the present invention provides an electronic device.

[0112] Figure 9 It is a structural block diagram of an electronic device according to an embodiment of the present invention.

[0113] like Figure 9 As shown, electronic device 500 includes: a processor 501 and a memory 503. Processor 501 and memory 503 are connected, for example, via a bus 502. Optionally, electronic device 500 may further include a transceiver 504. It should be noted that in actual applications, the number of transceivers 504 is not limited to one, and the structure of electronic device 500 does not constitute a limitation on the embodiments of the present invention.

[0114] The processor 501 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It may implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with the present disclosure. The processor 501 may also be a combination that implements computing functions, such as a combination of one or more microprocessors, a combination of a DSP and a microprocessor, and the like.

[0115] The bus 502 may include a path for transmitting information between the above components. The bus 502 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus. The bus 502 may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 9 Only one thick line is used in the diagram, but this does not mean that there is only one bus or one type of bus.

[0116] The memory 503 is used to store a computer program corresponding to the control method of the sewage treatment system of the above embodiment of the present invention, and the computer program is controlled and executed by the processor 501. The processor 501 is used to execute the computer program stored in the memory 503 to implement the content shown in the above method embodiment.

[0117] in, Figure 9 The electronic device 500 shown is merely an example and should not limit the functions and scope of use of the embodiments of the present invention.

[0118] The electronic device of the embodiment of the present invention, by implementing the sewage treatment method of the above embodiment, can adjust the plasma treatment density by controlling the vertical movement of the low-temperature plasma generating unit, and change the area where sewage treatment can be performed, thereby achieving better sewage treatment capacity.

[0119] It should be noted that the logic and / or steps represented in the flowcharts or otherwise described herein can be considered as a sequenced list of executable instructions for implementing the logical functions, and can be embodied in any computer-readable medium for use by an instruction execution system, apparatus, or device (such as a computer-based system, a system including a processor, or other system that can fetch and execute instructions from an instruction execution system, apparatus, or device), or in conjunction with such an instruction execution system, apparatus, or device. For the purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transmit a program for use by an instruction execution system, apparatus, or device, or in conjunction with such an instruction execution system, apparatus, or device. More specific examples (non-exhaustive list) of computer-readable media include the following: an electrical connection portion having one or more wires (electronic device), a portable computer disk cartridge (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and programmable read-only memory (EPROM or flash memory), fiber optic devices, and portable compact disc read-only memory (CDROM). Furthermore, the computer-readable medium may even be paper or other suitable medium on which the program is printed, since the program may be obtained electronically, for example, by optically scanning the paper or other medium and then editing, interpreting or processing it in another suitable manner if necessary, and then storing it in a computer memory.

[0120] It should be understood that various parts of the present invention can be implemented using hardware, software, firmware, or a combination thereof. In the above-described embodiments, multiple steps or methods can be implemented using software or firmware stored in a memory and executed by a suitable instruction execution system. If implemented using hardware, as in another embodiment, any one of the following technologies known in the art or a combination thereof can be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application-specific integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0121] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0122] In the description of this specification, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and should not be understood as a limitation on the present invention.

[0123] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0124] In the description of this specification, unless otherwise specified, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. For those skilled in the art, the specific meanings of the above terms in this invention can be understood according to specific circumstances.

[0125] In the present invention, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0126] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A sewage treatment system, characterized in that: The system includes: a distributed plasma control module, a water information acquisition module, and a plasma processing module. The plasma processing module includes a negative electrode plate and an array of plasma wastewater treatment components, which are arranged vertically and in parallel. The plasma wastewater treatment components include a high-voltage power supply, a low-temperature plasma generating unit, and a vertical motion module. The vertical motion module is a unit for controlling the vertical movement of the low-temperature plasma generating unit. The electrode in the low-temperature plasma generating unit is connected to the positive electrode of the high-voltage power supply and is arranged opposite to the negative electrode plate. The negative electrode plate is connected to the negative electrode of the high-voltage power supply. Among them, the distributed plasma control module is respectively connected to the water information acquisition module and each of the vertical motion modules, and is used to determine the first target control parameter of each vertical motion module based on the sewage information before treatment and the sewage information after treatment collected by the water information acquisition module, and control the corresponding vertical motion module to drive the corresponding low-temperature plasma generating unit to move vertically according to the first target control parameter to adjust the plasma treatment density.

2. The sewage treatment system according to claim 1, characterized in that: The distributed plasma control module is also connected to each of the high-voltage power supplies respectively, and is also used to determine the second target control parameters of each of the high-voltage power supplies based on the sewage information before treatment and the sewage information after treatment, and adjust the power supply parameters of the corresponding high-voltage power supply according to the second target control parameters to adjust the plasma treatment intensity.

3. The sewage treatment system according to claim 1, characterized in that: The plasma treatment module further includes a spray device, which is arranged on one side of the sewage treatment area, and the sewage treatment area is the area between the array plasma sewage treatment assembly and the negative plate; wherein, The distributed plasma control module is also connected to the spray device respectively, and is also used to determine the third target control parameter of the spray device based on the sewage information before treatment and the sewage information after treatment, and control the flow rate of the spray device to spray sewage into the sewage treatment area according to the third target control parameter.

4. The sewage treatment system according to claim 2, characterized in that: The plasma wastewater treatment component also includes a horizontal motion module; in, Among them, the distributed plasma control module is also connected to each of the vertical motion modules respectively, and is used to determine the fourth target control parameter of each horizontal motion module based on the sewage information before treatment and the sewage information after treatment collected by the water information collection module, and control the corresponding horizontal motion module to drive the corresponding low-temperature plasma generating unit to move horizontally according to the fourth target control parameter to adjust the plasma treatment intensity.

5. The sewage treatment system according to claim 3, characterized in that: The plasma processing module further includes a life detection module, which is connected to the distributed plasma control module and the electrodes in each of the low-temperature plasma generating units, respectively, for detecting the life of each of the electrodes and transmitting the detected life to the distributed plasma control module; The distributed plasma control module is further configured to issue a prompt message to prompt for replacement of the corresponding low-temperature plasma generating unit when the lifetime reaches a preset lifetime threshold.

6. The sewage treatment system according to claim 1, characterized in that: The system further comprises: a temperature control module connected to the distributed plasma control module, and configured to control the temperature of the sewage before treatment under the control of the distributed plasma control module; A thermal management module is connected to the temperature control module and the plasma processing module, and is used to adjust the temperature of the temperature control module and the plasma processing module.

7. The sewage treatment system according to claim 1, characterized in that: The system further comprises: A power supply module is connected to the plasma processing module and the distributed plasma control module, and is used to supply power to the plasma processing module and the distributed plasma control module.

8. The sewage treatment system according to claim 6, characterized in that: The distributed plasma control module further includes: A storage device is used to store a pre-processing scheme, wherein the pre-processing scheme includes a scheme for controlling the temperature control module and the plasma processing module generated by the distributed plasma control module according to the sewage information.

9. A sewage treatment method, characterized in that: The method is used in a sewage treatment system according to any one of claims 1 to 8, and the method comprises: Collect information on sewage to obtain information on sewage before and after treatment; The low-temperature plasma generating unit is controlled to move vertically according to the sewage information before treatment and the sewage information after treatment to adjust the plasma treatment density, and the plasma generated by the low-temperature plasma generating unit is used to treat the sewage.

10. An electronic device, characterized in that: The method comprises a memory, a processor and a computer program stored in the memory and running on the processor, wherein when the computer program is executed by the processor, the sewage treatment method according to claim 9 is implemented.

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