Pixel unit from infrared detection to light-emitting display and imaging array device

Abstract

The invention belongs to the technical field of photoelectric semiconductor devices, and particularly relates to a pixel unit from infrared detection to light-emitting display and an imaging array device.Each pixel unit comprises an infrared photoelectric detector used for detecting incident infrared signals and generating light currents; the current amplification circuit comprises a reset end used for inputting a reset pulse signal, an input end used for coupling input light current, and an output end used for outputting light current after gain amplification; the current amplification circuit controls a gain amplification coefficient of light current according to an input reset pulse signal; and the light-emitting display is coupled with the output end of the current amplification circuit and is directly driven by the light current after gain amplification to carry out light-emitting display. According to the invention, the current amplification circuit in each pixel is directly utilized to amplify the light current gain generated by the infrared photoelectric detector, and then the light current gain is applied to the light-emitting display, so that the light-emitting display is driven to carry out light-emitting display, and the response speed of the device is optimized.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic semiconductor devices, and more specifically to a pixel unit and an imaging array device for infrared detection and luminous display. Background Art

[0002] Infrared detection and imaging have important applications in automatic control, safety monitoring, medical diagnosis, food safety, etc. Because the infrared wavelength exceeds the sensitive area of ​​the human eye, the human eye cannot directly observe infrared images.

[0003] In general, the existing infrared image detection system usually transmits the image generated by the infrared photodetector array or camera to the image buffer of the system central processor, then performs image processing, and finally sends it to the display control system, and the display array transmits the infrared image information to the human eye. This process requires at least a delay time corresponding to several image amplitude frequencies, so it cannot be used in applications that require rapid measurement and timely response. Summary of the invention

[0004] In order to solve the problem in the prior art that the current infrared image detection system requires at least a delay time of several image amplitude frequencies to display the detected infrared image information, resulting in the inability to quickly measure and respond in time, a pixel unit and imaging array device for infrared detection and luminous display are proposed. The device directly uses a current amplifier circuit to directly gain amplify the photocurrent generated by the infrared photodetector and applies it to the luminous display to drive the luminous display to display light, thereby optimizing the response speed of the device.

[0005] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0006] A pixel unit for infrared detection and luminous display, comprising:

[0007] an infrared photodetector, for detecting incident infrared signals and generating photocurrent;

[0008] A current amplifier circuit, comprising a reset terminal for inputting a reset pulse signal, an input terminal for coupling and inputting a photocurrent generated by an infrared photodetector, and an output terminal for outputting a gain-amplified photocurrent; the current amplifier circuit controls the gain amplification factor of the photocurrent according to the reset pulse signal inputted from the reset terminal;

[0009] A light-emitting display is coupled to the output end of the current amplifier circuit and is directly driven by the photocurrent after gain amplification by the current amplifier circuit to perform light-emitting display.

[0010] Preferably, the current amplification circuit further includes:

[0011] A switching transistor is coupled between a first voltage source and an input terminal; the gate of the switching transistor is coupled as a reset terminal to input a reset pulse signal; the switching transistor is turned on or off according to the high or low level of the reset pulse signal, and controls the gain amplification factor of the photocurrent according to the integration time of the reset pulse signal;

[0012] an amplifying transistor, coupled between the output terminal and the second voltage source; the gate of the amplifying transistor is coupled to the input terminal, and is used to perform gain amplification on the input photocurrent, and couple the gain-amplified photocurrent to output through the output terminal;

[0013] A capacitor is coupled between the gate of the amplifying transistor and the second voltage source;

[0014] When the switching transistor is turned on, the voltage across the capacitor is set to zero, and the output end of the amplifying transistor is set to zero. At this time, the light-emitting display is in a non-working state; when the switching transistor is turned off, the photocurrent generated by the infrared photodetector charges the capacitor. When the voltage across the capacitor is greater than the threshold voltage of the amplifying transistor, the photocurrent is amplified by the gain of the amplifying transistor and output and input into the light-emitting display. At this time, the light-emitting display is in a working state.

[0015] Furthermore, the switch transistor and the amplifier transistor are N-type or P-type transistors, and the transistor includes a metal oxide semiconductor field effect transistor MOSFET or a thin film transistor TFT.

[0016] Further, when the switch transistor is a P-type transistor, the first voltage source is a high reference voltage source; when the switch transistor is an N-type transistor, the first voltage source is a low reference voltage source.

[0017] Further, when the amplifying transistor is a P-type transistor, the second voltage source is a high reference voltage source; when the amplifying transistor is an N-type transistor, the second voltage source is a low reference voltage source.

[0018] Furthermore, the first voltage source and the second voltage source are both connected to the same voltage source.

[0019] Furthermore, the first voltage source and the second voltage source are connected to different voltage sources respectively.

[0020] Furthermore, the current amplification circuit is provided with at least one stage;

[0021] Wherein, the output end of the previous current amplifier circuit is coupled to the input end of the next current amplifier circuit;

[0022] The reset terminal of each stage of the current amplifier circuit is used to input a reset pulse signal;

[0023] The output end of the last stage current amplifier circuit is used to couple and output the photocurrent after gain amplification to the light-emitting display for light-emitting display;

[0024] The input end of the first-stage current amplifier circuit is used to couple the photocurrent generated by the input infrared photodetector.

[0025] Preferably, the current amplification circuit further includes:

[0026] an amplifying transistor, coupled between the output terminal and the third voltage source; the gate of the amplifying transistor is coupled to the input terminal, and is used to perform gain amplification on the input photocurrent, and couple the gain-amplified photocurrent to output through the output terminal;

[0027] A capacitor is coupled between the gate of the amplifying transistor and a third voltage source;

[0028] One end of the infrared photoelectric detector is connected to the input end, and the other end of the infrared photoelectric detector is used as a reset end to input a reset pulse signal;

[0029] When the infrared photodetector is in working state, the photocurrent it generates charges the capacitor; when the voltage across the capacitor is greater than the threshold voltage of the amplifier transistor, the photocurrent is amplified by the amplifier transistor gain and output and input into the light-emitting display, at which time the light-emitting display is in working state.

[0030] Furthermore, the amplifying transistor is an N-type or P-type transistor, and the transistor includes a metal oxide semiconductor field effect transistor MOSFET, or a thin film transistor TFT.

[0031] Further, when the amplifying transistor is an N-type transistor, the third voltage source is a low reference voltage source; when the amplifying transistor is a P-type transistor, the third voltage source is a high reference voltage source.

[0032] Furthermore, the capacitor is a separate capacitor device or a parasitic capacitor of the amplifier transistor.

[0033] Preferably, the detection wavelength range of the infrared photodetector includes 700-1000nm, 1000-2500nm, or 2.5-25um, or any combination thereof.

[0034] An infrared detection and luminous display imaging array device, comprising:

[0035] A substrate having a plurality of parallel current amplification circuits integrated therein;

[0036] An infrared photoelectric detection pixel array is disposed on the first surface of the substrate and is composed of a plurality of infrared photoelectric detectors;

[0037] A light-emitting display pixel array is disposed on the second surface of the substrate and is composed of a plurality of light-emitting displays;

[0038] Wherein, each infrared photodetector, a corresponding current amplifying circuit and a light-emitting display form a pixel unit of infrared detection to light-emitting display as claimed in claim 1.

[0039] Furthermore, the substrate also includes an input terminal formed on the first surface for coupling with a first bottom metal electrode in the infrared photodetector; and an output terminal formed on the second surface for coupling with a second bottom metal electrode in the light-emitting display.

[0040] Furthermore, the infrared photodetector comprises at least a first bottom metal electrode, a photosensitive layer, and a first top metal electrode in order from bottom to top; the first bottom metal electrode is coupled to the input end of the current amplifier circuit;

[0041] The photosensitive layer comprises an organic semiconductor in the form of a single-phase film or a D / A bulk heterojunction blended film, an inorganic semiconductor or a compound semiconductor in the form of a single phase or quantum dot nanoparticles, or a combination in a mixed form or a thin film stack;

[0042] Wherein, D represents an organic molecule of an electron donor; A represents an organic molecule of an electron acceptor;

[0043] The inorganic semiconductor includes Si, Ge, SiGe, CuInS in crystalline or polycrystalline form. x Se 2-x (0≤x≤2), CuInGa(S,Se), PbS, PbI2, PBI3, InGaAs, CdTe, HgCdTe nano-quantum dots, nano-quantum thin films or single-phase films;

[0044] The organic semiconductor includes one or more organic molecules used as electron donors (D) and one or more organic molecules used as electron acceptors (A) to form an organic blend of D / A;

[0045] The light-emitting display includes an organic light-emitting display, an inorganic light-emitting display, an organic-inorganic hybrid light-emitting display, a quantum dot light-emitting display, and a perovskite light-emitting display.

[0046] Compared with the prior art, the present invention has the following beneficial effects:

[0047] The present invention integrates a number of current amplifier circuits arranged in parallel in a substrate, and the reset end of each current amplifier circuit inputs a reset pulse signal; the input end of each current amplifier circuit is used to couple the photocurrent generated by the infrared photodetector; the output end of each current amplifier circuit couples and outputs the photocurrent after amplification gain, which is directly applied to the light-emitting display, so as to realize the light-emitting display directly through the light-emitting display. The present invention does not need to read the photocurrent through the pixel readout circuit first, and then drive the light-emitting display array to display through the addressing drive circuit; it not only simplifies the circuit, but also effectively reduces the control difficulty and optimizes the device response speed. The present invention forms a pixel unit through an infrared photodetector, a current amplifier circuit and a light-emitting display; in each frame, all pixel units are processed simultaneously (that is, they can be processed in parallel in the field of digital processing). BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 It is a circuit principle diagram of a pixel unit in which both T1 and T2 are N-type metal oxide semiconductor field effect transistors (MOSFET) in the present invention.

[0049] Figure 2 It is a circuit schematic diagram of a pixel unit in which both T1 and T2 are P-type metal oxide semiconductor field effect transistors (MOSFET) in the present invention.

[0050] Figure 3 It is a circuit principle diagram of a pixel unit of a current amplifier circuit constructed by a CMOS field effect tube composed of T1 and T2 in the present invention.

[0051] Figure 4 This is a circuit schematic diagram of a pixel unit constructed by another CMOS field effect tube composed of T1 and T2 in the present invention.

[0052] Figure 5 It corresponds to Figure 1 Circuit schematic diagram of a pixel unit with an expanded two-stage current amplifier circuit.

[0053] Figure 6 It corresponds to Figure 2 Circuit schematic diagram of a pixel unit with an expanded two-stage current amplifier circuit.

[0054] Figure 7 It corresponds to Figure 3 Circuit schematic diagram of a pixel unit with an expanded two-stage current amplifier circuit.

[0055] Figure 8 It corresponds to Figure 4 Circuit schematic diagram of a pixel unit with an expanded two-stage current amplifier circuit.

[0056] Fig. 9It is a circuit schematic diagram of a pixel unit that uses two independent power supplies.

[0057] Fig.10 The present invention provides a circuit schematic diagram of a pixel unit of a simplified current amplification circuit.

[0058] Fig.11 The circuit schematic diagram of a pixel unit of another simplified current amplification circuit provided by the present invention.

[0059] Fig.12 It is a structural schematic diagram of an infrared detection to light-emitting display imaging array device provided by the present invention.

[0060] Fig.13 It is a schematic structural diagram of the substrate provided by the present invention.

[0061] In the figure: 1-current amplification circuit, 2-substrate, 3-infrared photodetector, 301-first bottom metal electrode, 3001-first metal conductive pillar, 302-first charge transport layer, 303-photosensitive layer, 304-second charge transport layer, 305-first top metal electrode, 306-first encapsulation layer, 4-light-emitting display, 401-second bottom metal electrode, 4001-second metal conductive pillar, 402-third charge transport layer, 403-light-emitting layer, 404-fourth charge transport layer, 405-second top metal electrode, 406-second encapsulation layer. DETAILED DESCRIPTION

[0062] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. The present invention is described in detail below in combination with the drawings and specific implementation methods.

[0063] It should be understood that when used in this specification, the terms "include" and "comprising" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or collections thereof.

[0064] It should also be understood that the terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention, unless the context clearly indicates otherwise, the singular forms of "a", "an" and "the" are intended to include plural forms.

[0065] It should be further understood that the term “and / or” used in the specification of the present invention refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0066] Example 1

[0067] like Figure 1 to Figure 4 As shown, a pixel unit for infrared detection and luminous display includes:

[0068] an infrared photodetector, for detecting incident infrared signals and generating photocurrent;

[0069] A current amplifier circuit, comprising a reset terminal for inputting a reset pulse signal, an input terminal for coupling and inputting a photocurrent generated by an infrared photodetector, and an output terminal for outputting a gain-amplified photocurrent; the current amplifier circuit controls the gain amplification factor of the photocurrent according to the reset pulse signal inputted from the reset terminal;

[0070] A light-emitting display is coupled to the output end of the current amplifier circuit and is directly driven by the photocurrent after gain amplification by the current amplifier circuit to perform light-emitting display.

[0071] In this embodiment, the current amplifier circuit is integrated in the substrate. The present invention uses the photocurrent generated by the infrared photodetector detecting the incident infrared signal to perform gain amplification through the current amplifier circuit, and then directly displays the light through the light-emitting display. Since the present invention does not need to read the photocurrent through the pixel readout circuit first, and then drive the light-emitting display array to display through the addressing drive circuit, the infrared photodetector and the light-emitting display can be integrated on the same substrate. Not only does it simplify the circuit, but it can also effectively reduce the control difficulty and optimize the device response speed.

[0072] In this embodiment, an infrared photodetector is a detection pixel, and an luminous display is a display pixel; wherein the effective size of the detection pixel is defined by the bottom metal electrode of the infrared photodetector; and the effective size of the display pixel is defined by the bottom metal electrode of the luminous display. The present invention forms a pixel unit through an infrared photodetector, a current amplifier circuit and a luminous display; in each frame, different pixel units are processed simultaneously (i.e., they can be processed in parallel in the field of digital processing).

[0073] In a specific embodiment, the current amplification circuit further includes:

[0074] A switching transistor is coupled between the first voltage source and the input terminal; the gate of the switching transistor is coupled to input a reset pulse signal; the switching transistor is turned on or off according to the high or low level of the reset pulse signal, and controls the gain amplification factor of the photocurrent according to the integration time of the reset pulse signal;

[0075] an amplifying transistor, coupled between the output terminal and the second voltage source; the gate of the amplifying transistor is coupled to the input terminal, and is used to perform gain amplification on the input photocurrent, and couple the gain-amplified photocurrent to output through the output terminal;

[0076] A capacitor is coupled between the gate of the amplifying transistor and the second voltage source;

[0077] When the switching transistor is turned on, the voltage across the capacitor is set to zero, and the output end of the amplifying transistor is set to zero. At this time, the light-emitting display is in a non-working state; when the switching transistor is turned off, the photocurrent generated by the infrared photodetector charges the capacitor. When the voltage across the capacitor is greater than the threshold voltage of the amplifying transistor, the photocurrent is amplified by the gain of the amplifying transistor and output and input into the light-emitting display. At this time, the light-emitting display is in a working state.

[0078] The switch transistor and the amplifier transistor are N-type or P-type transistors, and the transistor includes a metal oxide semiconductor field effect transistor MOSFET or a thin film transistor TFT.

[0079] When the switch transistor is a P-type transistor, the first voltage source is a high reference voltage source; when the switch transistor is an N-type transistor, the first voltage source is a low reference voltage source.

[0080] When the amplifying transistor is a P-type transistor, the second voltage source is a high reference voltage source; when the amplifying transistor is an N-type transistor, the second voltage source is a low reference voltage source.

[0081] In this embodiment, if Figure 1 As shown, a current amplifying circuit in which both the switch transistor and the amplifying transistor are N-type field effect transistors MOSFET; taking the first voltage source and the second voltage source as an example, both are connected to the same voltage source (that is, the first voltage source and the second voltage source are connected together), the current amplifying circuit also includes:

[0082] The switching transistor T1 is connected between the low reference voltage source Vss and the input terminal I in Between the drain D1 of the switching transistor T1 and the input terminal I inThe source S1 of the switch transistor T1 is coupled to the low reference voltage source Vss; the gate G1 of the switch transistor T1 is coupled as a reset terminal to input a reset pulse signal; the switch transistor T1 is turned on or off according to the high or low level of the reset pulse signal, and controls the gain amplification factor of the photocurrent according to the integration time t2 of the reset pulse signal;

[0083] Amplifier transistor T2, connected to the output terminal I out and the low reference voltage source Vss, that is, between the drain D2 of the amplifier transistor T2 and the output terminal I out The source S2 of the amplifying transistor T2 is coupled to the low reference voltage source Vss; the gate G2 of the amplifying transistor T2 is coupled to the input terminal I in The coupling is used to amplify the gain of the input photocurrent and couple the amplified photocurrent to output through the output end;

[0084] The capacitor C is coupled between the gate G2 of the amplifying transistor T2 and the low reference voltage source Vss, which is equivalent to the capacitor C being connected between the gate G2 and the source S2 of the amplifying transistor T2.

[0085] In this embodiment, the high level V H , low level V L It can control the on and off of the switching transistor T1. L The integration time t2 can be used to control the gain amplification factor of the photocurrent.

[0086] When the reset pulse signal is set to high level V during t1 H When the switch transistor T1 is turned on, the voltage V(C) across the capacitor C is set to zero, that is, V(C)=Vgs(T2) is set to zero, and then the drain D2 (that is, the output terminal I2) of the amplifying transistor T2 is amplified. out ) is also set to zero, and the light-emitting display LED is in a non-working state; Vgs(T2) represents the voltage between the gate G2 and the source S2 of the amplifier transistor T2. At the beginning of t2, the reset pulse signal is high level V H Switch to low level V L , the switch transistor T1 is in the off state. Under infrared irradiation, during period t2, the infrared photodetector OPD charges the capacitor C with the corresponding photocurrent. When V(C) (i.e., Vgs(T2)) is greater than the threshold voltage of the amplifier transistor T2, the photocurrent is amplified by the amplifier transistor T2 gain and output to the light-emitting display. Since the photocurrent generated by the infrared photodetector OPD during period t2 integrates the capacitor C, the light intensity of the light-emitting display increases with the integration time t2. When the operating amplitude frequency of the reset pulse signal is high enough (f=(t1+t2) -1, greater than 50Hz), the light intensity actually seen by the human eye is the average light intensity of each cycle of the reset pulse signal.

[0087] In this embodiment, one end of the infrared photoelectric detector is connected to the input terminal I in The other end is connected to a high reference voltage source Vdd; one end of the light-emitting display is connected to the output end I out The other end is connected to a high reference voltage source Vdd.

[0088] In another specific embodiment, the switch transistor T1 and the amplifier transistor T2 may also be P-type metal oxide semiconductor field effect transistors (PMOS-FETs). For example, the first voltage source and the second voltage source are connected to the same voltage source (that is, the first voltage source and the second voltage source are connected together). Figure 2 As shown, the current amplification circuit also includes:

[0089] The switching transistor T1 is connected between the high reference voltage source Vdd and the input terminal I in Between the drain D1 of the switching transistor T1 and the input terminal I in The source S1 of the switch transistor T1 is coupled to the high reference voltage source Vdd; the gate G1 of the switch transistor T1 is coupled as a reset terminal to input a reset pulse signal; the switch transistor T1 is turned on or off according to the high or low level of the reset pulse signal, and controls the gain amplification factor of the photocurrent according to the integration time of the reset pulse signal;

[0090] Amplifier transistor T2, connected to the output terminal I out and the high reference voltage source Vss, that is, between the drain D2 of the amplifier transistor T2 and the output terminal I out The source S2 of the amplifying transistor T2 is connected to the high reference voltage source Vdd; the gate G2 of the amplifying transistor T2 is connected to the input terminal I in The coupling is used to amplify the gain of the input photocurrent and couple the amplified photocurrent to output through the output end;

[0091] The capacitor C is coupled between the gate G2 of the amplifying transistor T2 and the high reference voltage source Vdd, which is equivalent to the capacitor C being connected between the gate G2 and the source S2 of the amplifying transistor T2.

[0092] In this embodiment, one end of the infrared photoelectric detector is connected to the input terminal I in The other end is connected to a low reference voltage source Vss; one end of the light-emitting display is connected to the output end I out The other end is connected to a low reference voltage source Vss.

[0093] In another specific embodiment, the transistor can also be manufactured using a PMOS and NMOS CMOS silicon integrated circuit process, that is, in the current amplifier circuit, a P-type metal oxide semiconductor field effect transistor (PMOS-FET) can be selected as the switch transistor T1, and an N-type metal oxide semiconductor field effect transistor (PMOS-FET) can be selected as the amplifier transistor T2, so that the switch transistor T1 and the amplifier transistor T2 constitute a CMOS field effect transistor, and the circuit connection of the corresponding pixel unit is as follows: Figure 3 In the current amplifier circuit, an N-type metal oxide semiconductor field effect transistor (PMOS-FET) can also be selected as the switch transistor T1, and a P-type metal oxide semiconductor field effect transistor (PMOS-FET) can be selected as the amplifier transistor T2, so that the switch transistor T1 and the amplifier transistor T2 constitute another CMOS field effect transistor, and the circuit connection of the corresponding pixel unit is as follows Figure 4 shown.

[0094] It should be noted that the switch transistor T1 and the amplifier transistor T2 can also be selected from N-type or P-type thin film transistors TFT, and their specific circuit connections are similar to Figure 1 to Figure 4 Similar, no detailed description is given here.

[0095] In this embodiment, Figure 1 and Figure 2 The visible image displayed by the luminous display is the positive image of the infrared image detected by the infrared photoelectric detector, that is, the bright area of ​​the visible image corresponds to the bright area of ​​the infrared image. Figure 3 and Figure 4 The visible image displayed by the mid-luminescent display is the negative image of the infrared image detected by the infrared photodetector, that is, the dark area of ​​the infrared image corresponds to the bright area of ​​the visible image. This array device with a negative output is suitable for special applications that focus on the dark area of ​​the image.

[0096] In a specific embodiment, the current amplification circuit is provided with at least one stage;

[0097] When the amplification gain of a primary current amplifier circuit is insufficient, a multi-stage current amplifier circuit can be set up in a cascade manner;

[0098] Wherein, the output end of the previous current amplifier circuit is coupled to the input end of the next current amplifier circuit;

[0099] The reset terminal of each stage of the current amplifier circuit is used to input a reset pulse signal;

[0100] The output end of the last stage current amplifier circuit is used to couple and output the photocurrent after gain amplification to the light-emitting display for light-emitting display;

[0101] The input end of the first-stage current amplifier circuit is used to couple the photocurrent generated by the input infrared photodetector.

[0102] In this embodiment, if Figure 1 , Figure 2 , Figure 3 , Figure 4 The single-stage current amplifier circuit shown is suitable for building a multi-stage current amplifier circuit in a cascade manner, and the corresponding two-stage current amplifier circuits are as follows Figure 5 , Figure 6 , Figure 7 , Figure 8 The connection of three or more current amplifier circuits is shown in Figure 5 , Figure 6 , Figure 7 , Figure 8 The connections are basically the same and detailed description is omitted here.

[0103] The current amplifier circuit of the present invention can be prepared by using a standard CMOS integrated circuit process. In addition to using silicon-based CMOS integrated circuits, these current amplifier circuits can also be prepared by using other inorganic semiconductor crystal materials (such as silicon carbide, gallium nitride, sapphire) and corresponding device preparation processes. In addition, these circuits can also be prepared by using thin film transistors (TFTs).

[0104] In this embodiment, the light-emitting display operates under forward bias, and the infrared photodetector operates under reverse bias; when the switch transistor T1 is an N-type transistor, the anode of the infrared photodetector is connected to the input terminal I of the current amplifier circuit. in , the cathode of the infrared photodetector is connected to the high reference voltage source Vdd. When the switch transistor T1 is a P-type transistor, the anode of the infrared photodetector is connected to the low reference voltage source Vss, and the cathode of the infrared photodetector is connected to the input terminal I of the current amplifier circuit. in When the amplifying transistor T2 is an N-type transistor, the anode of the light-emitting display is connected to the high reference voltage source Vdd, and the cathode of the light-emitting display is coupled to the drain D2 (output terminal Iout) of the amplifying transistor T2; when the amplifying transistor T2 is a P-type transistor, the anode of the light-emitting display is connected to the drain D2 (output terminal Iout) of the amplifying transistor T2, and the cathode of the light-emitting display is coupled to the low reference voltage source Vss. Figures 1 to 8 shown.

[0105] In this embodiment, if Figure 1 As shown, the current gain of a single-stage current amplifier circuit is: G I =I out / I in =(G m *t2) / C; where G mis the transconductance of the amplifier transistor T2, i.e. ΔI out / ΔV; C represents the capacitance value; I out and I in are the output current and input current respectively.

[0106] When the voltage between the source and drain of the amplifying transistor T2 is low, the G in the linear region is used. m , t2 is the low level time. Since the high level time t1 is short, t2 is approximately equal to the period of the reset pulse signal. For example, assuming that the transistor of the present invention adopts a metal oxide channel thin film transistor (MOTFT) with a mobility (μ) of 40 cm 2 / V·s, if a 100nm thick aluminum oxide gate insulating layer is used, the capacitance of the gate insulating layer is 80nF / cm 2 . Under working conditions G m Can be 100nA / 0.1V=10 -6 A / V, t1≤0.1mS, t2≥19.9mS≈20mS. Substitute these parameters into G I =I out / I in =G m *t2 / C, if the integral capacitor C is taken as 0.2pF, then we can get 10 5 The current gain G I If the industrialized low-temperature polysilicon thin-film transistor (LTPS-TFT) is used, its charge mobility (μ) is about 120cm 2 / V·s, but the capacitance C of the 100nm thick silicon dioxide gate insulation layer ox 20nF / cm 2 Therefore, the transconductance G of the low-temperature polysilicon thin film transistor is used. m (Proportional to μ and C ox The product) is also about 10 under the same working conditions -6 A / V, current gain G I Also up to 10 5 When using inorganic crystal field effect transistors (such as metal oxide single crystal silicon field effect transistors, or gallium arsenide / gallium nitride field effect transistors), the charge mobility can reach 300 or 1000 cm 2 / V·s or more, the current gain can be increased proportionally.

[0107] It should be noted that the pixel unit in the present invention does not require a pixel addressing function, and the current amplifier circuit in each pixel in each frame of the image simultaneously processes the input image information. The current gain can reach at least 10 5 , which can meet the requirements of output light intensity in various applications.

[0108] like Figure 1 The pixel unit of the infrared image to visible image with gain shown can be operated simply by a set of DC power supply (providing Vdd and Vss) and a reset pulse signal, and the gain of its current amplifier circuit can be adjusted by the integration time t2 of the reset pulse signal, which corresponds to the low-level signal. For example, for a given reset time t1 (usually only a few microseconds are needed for the voltage on the capacitor C to be completely reset to Vss or Vdd), the output current size and dynamic range of the amplifier transistor T2 can be adjusted by adjusting the integration time t2 of the capacitor. By adjusting the low-level V L The threshold voltage V of the amplifier transistor T2 th The relative value of can optimize the linearity and dynamic range of the current amplifier circuit in the weak light area. When the frequency of the reset pulse signal is greater than 50Hz, the human eye actually observes a continuous image without flicker. In some special applications, the appropriate reset time t1 (black screen time) can be selected to optimize the dynamic response sensitivity of the human eye and eliminate visual fatigue.

[0109] like Figure 2 to Figure 8 The pixel unit with gain shown can also be driven according to the same principle, and only the corresponding reset pulse signal needs to be selected according to the type, parameters and connection mode of the switch transistor T1 and the amplifier transistor T2.

[0110] In order to facilitate unified signal control and simplify the circuit, the gates G1 of the switch transistors in the current amplifier circuits at different levels are all connected to the shared reset pulse signal line for synchronous coupling input reset pulse signal, such as Figure 5-8 shown.

[0111] like Figures 1 to 8 In the pixel unit with gain shown in FIG. 1 , the first voltage source and the second voltage source are connected to the same voltage source. In another embodiment, the first voltage source and the second voltage source in the pixel unit are connected to different voltage sources (that is, the first voltage source and the second voltage source are independent voltage sources), thereby being applicable to driving infrared photodetectors and light-emitting displays with different characteristics, such as Fig. 9 As shown. This pixel unit separates the power supply end of the input circuit (Vdd1, Vss1) from the power supply end of the output circuit (Vdd2, Vss2). This pixel unit allows the use of infrared photodetectors and light-emitting displays with different characteristics; the performance of the infrared photodetector and the input current I are independently optimized through the bias parameters of Vdd1 and Vss1. in , the driving conditions of the light-emitting device can be independently optimized through Vdd2 and Vss2.

[0112] In a specific embodiment, Fig.10 , Fig.11As shown, the current amplification circuit also includes:

[0113] an amplifying transistor T, coupled between the output terminal Iout and the third voltage source; the gate of the amplifying transistor T is coupled to the input terminal Iin, and is used to gain-amplify the input photocurrent, and couple the gain-amplified photocurrent to output through the output terminal Iout;

[0114] A capacitor C is coupled between the gate G of the amplifying transistor T and a third voltage source;

[0115] One end of the infrared photoelectric detector is connected to the input terminal Iin, and the other end of the infrared photoelectric detector is connected as a reset terminal to input a reset pulse signal;

[0116] When the infrared photodetector is in working state, the photocurrent it generates charges the capacitor. When the voltage across the capacitor is greater than the threshold voltage of the amplifier transistor, the photocurrent is amplified by the amplifier transistor gain and output and input into the light-emitting display. At this time, the light-emitting display is in working state.

[0117] In this embodiment, the amplifying transistor is an N-type or P-type transistor, and the transistor includes a metal oxide semiconductor field effect transistor MOSFET or a thin film transistor TFT.

[0118] like Fig.10 As shown, when the amplifying transistor is an N-type transistor, the third voltage source is a low reference voltage source Vss, that is, the drain D of the amplifying transistor T is coupled to the output terminal Iout, and the source S of the amplifying transistor T is coupled to the low reference voltage source Vss; one end of the infrared photodetector is coupled to the input terminal of the current amplifying circuit, one end of the light-emitting display is coupled to the output terminal Iout of the current amplifying circuit, and the other end of the infrared photodetector and the other end of the light-emitting display are both coupled to the reset terminal for inputting a reset pulse signal. At this time, the high level in the reset pulse signal also acts as a high reference voltage source.

[0119] like Fig.11 As shown, when the amplifying transistor is a P-type transistor, the third voltage source is a high reference voltage source Vdd, that is, the drain D of the amplifying transistor T is coupled to the output terminal Iout, and the source S of the amplifying transistor T is coupled to the high reference voltage source Vdd. One end of the infrared photodetector is coupled to the input end of the current amplifying circuit, one end of the light-emitting display is coupled to the output end of the current amplifying circuit, and the other end of the infrared photodetector and the other end of the light-emitting display are both coupled to the reset end for inputting a reset pulse signal. At this time, the low level in the reset pulse signal also plays the role of a low reference voltage source Vss.

[0120] In this embodiment, Fig.10 , Fig.11 Given a simpler pixel unit, it will Figure 1 to Figure 4 The switching transistor T1 in the embodiment is omitted; the switching performance of the infrared photodetector is used to replace the switching transistor T1. Its working principle is similar to Figure 1 Similarly: During the t1 period of the reset pulse signal, the input infrared photodetector is in the forward conduction state, so that the voltage across the capacitor C is zero. During the t2 period of the reset pulse signal, the infrared photodetector is in the reverse bias state, and the photocurrent generated by the infrared photodetector charges the capacitor. The output photocurrent drives the light-emitting display with an amplification factor of Gm*t2 / C. Fig.10 , Fig.11 The pixel unit is more suitable for application in high pixel density array devices. Fig.10 and Fig.11 The pixel units composed of N-type and P-type MOSFETs are shown respectively, and the corresponding reset pulse signal, input terminal and output terminal waveforms are shown on the right side of the figure. Fig.10 As shown, the reset terminal is used to provide a reset pulse signal, and power is supplied to the amplifying transistor T2 and the light-emitting display at the same time.

[0121] In this embodiment, if Fig.10 As shown, the reset pulse signal can be designed as follows: high level V H =4V, low level V L = Vss-1V, Vss = 0V. When the reset pulse signal is set to V L At t2, the infrared photodetector is in a low resistance forward bias, Vgs(T) = V(C) is quickly reset to Vss, the output terminal Iout of the current amplifier circuit is set to zero, and the light-emitting display is turned off. At the beginning of t2, the low level V L Switch to high level V H , the infrared photodetector is in reverse bias. Under infrared irradiation, the photocurrent of the infrared photodetector begins to charge the capacitor C linearly over time, following V(C)=Vgs=(Iin*t) / C. When V(C) is greater than the threshold voltage of the amplifier transistor T2, the output current Iout increases over time.

[0122] Fig.10 , Fig.11 The single-stage current amplifier circuit can be expanded into a two-stage or more-stage current amplifier circuit, and the circuit connection of the expanded two-stage or more-stage current amplifier circuit is Figure 5 , Figure 6 Similar, no detailed description is given here.

[0123] During pixel circuit layout, capacitor C may be a separate capacitor or a parasitic capacitor of the amplifying transistor T2 (eg, formed by the overlapping region of the gate and source of T2). In this embodiment, the parasitic capacitor of the amplifying transistor T2 is preferably used as capacitor C.

[0124] A person skilled in the art can design a corresponding integrated circuit based on the current amplifier circuit provided by the present invention by adopting conventional integrated circuit design, so the integrated design of the current amplifier circuit of the present invention will not be described in detail herein.

[0125] In a specific embodiment, the detection wavelength range of the infrared photodetector includes 700-1000nm, 1000-2500nm, or 2.5-25um, or any combination thereof.

[0126] Example 2

[0127] Based on the infrared detection and light-emitting display pixel unit described in Example 1, this embodiment also provides an infrared detection and light-emitting display imaging array device, such as Fig.12 , Fig.13 As shown, it includes:

[0128] A substrate 2 having a plurality of parallel current amplifying circuits 1 integrated therein;

[0129] An infrared photoelectric detection pixel array 3 is disposed on the first surface of the substrate 2 and is composed of a plurality of infrared photoelectric detectors;

[0130] A light-emitting display pixel array 4 is disposed on the second surface of the substrate 2 and is composed of a plurality of light-emitting displays;

[0131] Each infrared photodetector, the corresponding current amplifying circuit 1 and the light-emitting display form a pixel unit of infrared detection to light-emitting display as described in Example 1.

[0132] It should be noted that the present invention can adopt infrared photoelectric detectors and light-emitting displays of conventional structures.

[0133] General, such as Fig.12As shown, the structure of the infrared photodetector includes, from bottom to top, a first bottom metal electrode 301, a photosensitive layer 303, and a first top metal electrode 305. It may also include a first charge transport layer 302 disposed between the first bottom metal electrode 301 and the photosensitive layer 303, and / or a second charge transport layer 304 disposed between the photosensitive layer 303 and the first top metal electrode 305. When the first bottom metal electrode 301 is a cathode, the first charge transport layer 302 is an electron transport layer, the second charge transport layer 304 is a hole transport layer, and the first top metal electrode 305 is an anode; when the first bottom metal electrode 301 is an anode, the first charge transport layer 302 is a hole transport layer, the second charge transport layer 304 is an electron transport layer, and the first top metal electrode 305 is a cathode. Therefore, the positions of the hole transport layer and the electron transport layer can be interchanged; the first top metal electrode 305 is a conductive metal oxide film (TCO) that is transparent or translucent in the infrared region, and the photodetector is encapsulated by a first encapsulation layer 306.

[0134] For the charge transport layers 302 and 305 made of inorganic materials, the electron transport layer is also called an N-type doped semiconductor layer, and the hole transport layer is also called a P-type doped semiconductor layer.

[0135] The photosensitive layer 303 includes an organic semiconductor in the form of a single-phase film or a D / A bulk heterojunction blended film, an inorganic semiconductor or a compound semiconductor in the form of a single-phase or quantum dot nanoparticle, or a combination in a mixed form or a thin film stack; wherein D represents an organic molecule of an electron donor; A represents an organic molecule of an electron acceptor;

[0136] Wherein, the inorganic semiconductor includes Si, Ge, SiGe, CuInS in crystalline or polycrystalline form. x Se 2-x (0≤x≤2), CuInGa(S,Se), PbS, PbI2, PBI3, InGaAs, CdTe, HgCdTe nano-quantum dots, nano-quantum thin films or single-phase films;

[0137] The organic semiconductor includes an organic blend of one or more organic molecules used as electron donors (D) and one or more organic molecules used as electron acceptors (A) to form D / A.

[0138] Similarly, if Fig.12As shown, the structure of the light-emitting display includes, from bottom to top, a second bottom metal electrode 401, a light-emitting layer 403, a fourth charge transport layer 404, and a second top metal electrode 405. It may also include a third charge transport layer 402 disposed between the second bottom metal electrode 401 and the light-emitting layer 403, and / or a fourth charge transport layer 404 disposed between the light-emitting layer 403 and the second top metal electrode 405. When the second bottom metal electrode 401 is a cathode, the third charge transport layer 402 is an electron transport layer, the fourth charge transport layer 404 is a hole transport layer, and the second top metal electrode 405 is an anode; when the second bottom metal electrode 401 is an anode, the third charge transport layer 402 is a hole transport layer, the fourth charge transport layer 404 is an electron transport layer, and the second top metal electrode 405 is a cathode. The second top metal electrode 405 is a conductive metal oxide film (TCO) that is transparent or translucent in the visible region, and the light-emitting display is encapsulated by a second encapsulation layer 406.

[0139] In a specific embodiment, Fig.12 , Fig.13 As shown, the substrate 2 also includes an input terminal formed on the first surface for coupling with the first bottom metal electrode 301 in the infrared photodetector 3; and an output terminal formed on the second surface for coupling with the second bottom metal electrode 401 in the light-emitting display 4.

[0140] The first surface and the second surface are two opposite surfaces of the substrate 2 .

[0141] The input end is connected to the first bottom metal electrode 301 in the infrared photodetector 3, and is used to couple the photocurrent generated by the input infrared photodetector 3;

[0142] The output end is coupled to the second bottom metal electrode 401 in the light-emitting display 4 to couple the photocurrent after the output gain is amplified.

[0143] In this embodiment, the Figure 1 or Figure 7 Taking the pixel unit shown as an example, the light-emitting display 4 works under forward bias, the second top metal electrode 405 of the light-emitting display 4 is an anode and is common to all light-emitting pixels; the first top metal electrode 305 of the infrared photodetector 3 is a cathode and is also common to all infrared detection pixels, and both sets of electrodes are connected to a high reference voltage source Vdd. The second bottom metal electrode 405 (cathode) of the light-emitting display 4 is coupled to the drain D2 of the amplifying transistor T2; the first bottom metal electrode 301 (anode) of the infrared photodetector 3 is coupled to the drain D1 of the switching transistor T1.

[0144] In the present invention, each current amplifier circuit 1, infrared photodetector 3 and light-emitting display 4 form a pixel unit; since the photocurrent generated by the infrared photodetector 3 is directly amplified by the current amplifier circuit 1 in the substrate 2, the light-emitting display 4 is driven to perform light-emitting display. Therefore, compared with the traditional infrared photodetector 3 and light-emitting display 4, the current amplifier circuit 1 of the present invention does not need an addressing function. In each frame, all infrared photodetectors 3 detect the incident light at the same time, so all pixel units perform image amplification processing at the same time. In addition, the photocurrent processing between each pixel unit of the present invention is independent of each other, and there is no mutual influence.

[0145] It should be noted that the current gain multiple and the light intensity of the output visible image of the pixel unit of the current gain proposed in the present invention can be adjusted by the integration time t2 of the reset pulse signal. Assuming that the efficiency of the infrared photodetector 3 is 0.5A / W, the efficiency of the light-emitting display 4 is 0.2W / A, and the current gain of the current amplifier circuit 1 is 10 5 , then the gain of the pixel unit composed of the infrared photoelectric detection unit 3, the current amplifier circuit 1 and the light-emitting display 4 is 10000, that is, the input 10 -9 W / cm 2 The infrared light intensity is converted into output 10 -5 W / cm 2 The visible light intensity is sufficient for use in various indoor and outdoor observation environments. Therefore, the imaging array device provided by the present invention is suitable for the needs of weak light detection.

[0146] In this embodiment, if Fig.12 , Fig.13 As shown, the input end of each current amplifier circuit 1 refers to the first metal pillar (plug) 3001, which is coupled to the first bottom metal electrode 301 of the infrared photodetector 3. The size of the first bottom metal electrode 301 defines the size of the infrared photodetection array pixel, which is generally greater than or equal to the size of the first metal guide pillar 3001. The periphery of the first metal guide pillar 3001 is filled with an inorganic insulator material (such as SiO2, SiON, SiN) or an organic insulator material (such as a patternable polyimide or acrylic sheet (photopattenable polyimide or polyacrylics)). Similarly, the output end of each current amplifier circuit 1 refers to the second metal guide pillar 4001, which is coupled to the second bottom metal electrode 401 of the light-emitting display 4.

[0147] If silicon wafer CMOS process is used to manufacture Fig.12 , Fig.13 The current amplifier circuit shown in the figure generally uses lightly doped (e.g., doping concentration 10 16 cm -3) wafer as substrate. The first metal guide pillar 3001 above the CMOS circuit is surrounded by insulating material, and the leakage crosstalk between pixels can be ignored. However, since the second metal guide pillar 4001 located below the CMOS circuit layer needs to pass through the doped silicon semiconductor wafer substrate layer, the crosstalk between pixels caused by the conduction of the wafer substrate layer must be avoided. This can be solved by one or a combination of the following methods:

[0148] 1. Appropriate device structure design. As mentioned above, the silicon wafer substrate side is used as the current output side. out Than I in The electrical insulation requirements between the second metal guide pillar 4001 arrays are reduced by several orders of magnitude.

[0149] 2. Use silicon wafer substrates with low doping concentration to reduce the possibility of leakage between pixels.

[0150] 3. Reduce the thickness of the silicon wafer substrate (such as using a thin substrate layer of less than 50 microns).

[0151] 4. Reduce the diameter of the second metal guide pillar 4001.

[0152] 5. Add an insulating layer between the silicon wafer substrate and each second metal guide pillar 4001.

[0153] Among them, reducing the thickness of the silicon wafer substrate can be implemented by the following means: (a) using mechanical grinding and chemical mechanical polishing (CMP) methods to thin and polish the thick wafer; (b) directly using SOI wafers (special wafers that transfer thin wafers to glass carriers) to prepare CMOS integrated circuits, and removing the glass substrate by grinding or chemical etching. Then, a silicon substrate through-hole (TSV) is prepared on the thin wafer by dry etching. After that, a layer of insulating layer (such as SiO2, SiON, SiN) is prepared on the surface of the via by chemical vapor deposition. Finally, the second metal guide column 4001 array is prepared by sputtering, vapor deposition, or non-electrode electroplating.

[0154] For the current amplifying circuit array prepared using silicon wafers, a second bottom metal electrode 401 array is designed to cover the current amplifying circuit of each pixel (especially above the switching transistor T1), and a metal or doped amorphous silicon material that is opaque to the emission wavelength of the light-emitting display 4 is selected to make the second bottom metal electrode 401 array. This can eliminate the influence of the output image light intensity on the turn-off performance of the switching transistor T1, thereby optimizing the dynamic range of the pixel unit proposed in the present invention.

[0155] In preparation Fig.12When the imaging array device is used, the first bottom metal electrode 301 and the second bottom metal electrode 401 are patterned so as to be aligned with the corresponding first metal guide pillar 3001 array and second metal guide pillar 4001 array on the substrate 2 respectively, and form ohmic contact.

[0156] Of course, the first metal conductive pillar 3001 on the first surface of the substrate 2 can also be directly used as the first bottom metal electrode 301 of the infrared photodetector 3, and then a continuous / non-patterned first charge transfer layer 302, a continuous / non-patterned photosensitive layer 303, a continuous / non-patterned first charge transfer layer 304, and a continuous / non-patterned first top metal electrode 305 can be formed directly on the surface of the switching transistor 3001 array on the first surface of the substrate 2.

[0157] Similarly, the second metal conductive pillars 4001 array on the second surface of the substrate 2 can also be directly used as the second bottom metal electrode 401 of the light-emitting display 4; then a continuous / non-patterned third charge transport layer 402, a continuous / non-patterned light-emitting layer 403, a continuous / non-patterned fourth charge transport layer 404, and a continuous / non-patterned second top metal electrode 405 are directly formed on the second metal conductive pillars 4001 on the first surface of the substrate 2. Regardless of the configuration, it falls within the protection scope of the present invention.

[0158] In addition to using silicon wafers, the current amplifier circuit 1 and the substrate 2 can also be prepared using other inorganic crystal materials, such as silicon carbide, gallium nitride, sapphire substrates and corresponding MOS device processes. In addition, the current amplifier circuit and the substrate 2 can also be prepared using thin film transistors (TFTs). Since the TFT circuit uses insulating materials as substrates, there is no leakage phenomenon mentioned above when using silicon wafers as substrates, and the relevant processes are omitted. It is worth pointing out that large-area thin film transistor integrated circuits have been widely used in displays of watches and mobile phones. Fig.12 The substrate 2 integrated with the current amplifying circuit 1 shown can be manufactured using an existing thin film transistor production line.

[0159] In this embodiment, in order to facilitate the unified control of the signal, the gates of the switch transistors T1 of the current amplifier circuits 1 at different levels are all connected to the shared reset pulse signal line for synchronously coupling the input reset pulse signal. In fact, the gates of all the switch transistors T1 in the substrate are connected to the shared reset pulse signal line, and the shared reset pulse signal line can be composed of multiple signal lines.

[0160] This embodiment also provides a method for preparing an infrared detection-luminescent display imaging array device, comprising the following steps:

[0161] Providing a substrate for carrying device processing;

[0162] A substrate 2 having a plurality of parallel current amplifying circuits integrated therein is bonded on one surface of the substrate, and an input metal electrode array is provided on the first surface of the substrate 2, and an output metal electrode array is provided on the second surface;

[0163] A continuous / non-patterned first charge transport layer 302, a continuous / non-patterned photosensitive layer 303, a continuous / non-patterned second charge transport layer 304, a continuous / non-patterned first top metal electrode 305 layer, and a continuous / non-patterned first encapsulation layer 306 are prepared in sequence from bottom to top on the first surface of the substrate 2; a new carrier transparent in the infrared region, such as glass, is attached above the first encapsulation layer.

[0164] For the substrate 2 prepared from a relatively thick silicon wafer, the second surface is thinned. Specific operation methods include: mechanical grinding and chemical mechanical grinding;

[0165] If an SOI wafer (a special wafer that transfers a thin wafer onto a glass carrier) is used as a substrate, a current amplifier circuit array integrated circuit, a first metal guide column 3001, and a first bottom metal electrode 301 layer are first prepared on the silicon surface, and then each layer of the infrared photodetector array device is completed on the first metal electrode array. Afterwards, a new carrier, such as glass, is attached above the first packaging layer.

[0166] Then, the glass carrier on the SOI side is removed by grinding or chemical etching to expose the second surface of the thin single crystal silicon and the contact end surface of the second metal guide column 4001 array. Finally, the second bottom metal electrode 401 array is formed by sputtering and photolithography.

[0167] If the substrate 2 is prepared by TFT process, a polyimide layer of about 10-20 microns thick is formed on the upper surface of glass. Then a SiO2 buffer layer is added, and then a Fig.12 , 13 The shown includes 401, 4001, TFT layers, 3001 and 301 layers. With appropriate design, 301 and 3001 layers can be realized simultaneously with the gate layer of TFT. 401 and 4001 layers can be realized simultaneously with the source / drain layer of TFT. The whole process can be realized by 4-6 photolithography processes. The photolithography technology commonly used in the display industry is adopted, such as Figure 8 or Fig. 9 The current amplifier circuit shown, Fig.13 The pixel size of the illustrated substrate 2 may be less than 10 microns.

[0168] An infrared photodetector array is prepared above the substrate 2 containing the TFT current amplifier circuit array, in the same manner as in the previous steps. After a new carrier is attached above the first encapsulation layer. The glass substrate is separated from the polyimide layer by nanosecond pulse laser irradiation on the original glass substrate side. The polyimide layer can then be removed by oxygen plasma. Then, the SiO2 above the second bottom metal electrode 401 array is removed by photolithography.

[0169] Then, a continuous / non-patterned third charge transport layer 402, a continuous / non-patterned light-emitting layer 403, a continuous / non-patterned fourth charge transport layer 404, a continuous / non-patterned second top metal electrode 405, and a continuous / non-patterned second encapsulation layer 406 are prepared in sequence from bottom to top on the second surface of the substrate 2.

[0170] In this embodiment, the photosensitive layer 303 and the light-emitting layer are prepared by a method selected from solution film formation or vacuum thermal evaporation deposition.

[0171] The preparation of the first charge transport layer 302, the second charge transport layer 304, the third charge transport layer 402, and the fourth charge transport layer 404 are independently selected from one or more of solution film formation, sol-gel film formation, vacuum thermal evaporation, atomic layer deposition, chemical vapor deposition, electrodeposition, and anodization.

[0172] The preparation of the first top metal electrode 305, the first bottom metal electrode 301, the second top metal electrode 405, and the second bottom metal electrode 401 are independently selected from one or more of vacuum thermal evaporation, electron beam evaporation, molecular beam evaporation or plasma sputtering, atomic layer deposition or liquid film formation followed by reduction conversion, electroplating or electrodeposition.

[0173] The preparation of the first encapsulation layer 306 and the second encapsulation layer 406 is selected from one of vacuum thermal evaporation, chemical vapor deposition, atomic layer deposition, plasma sputtering, and liquid film formation.

[0174] It should be noted that any infrared photodetector or luminous display of any structure, as long as it is combined with the current amplifier circuit provided by the present invention, and the photocurrent generated by the infrared photodetector is directly applied to the luminous display through the current amplifier circuit for display, all belong to the protection scope of the present invention. In addition, ultraviolet photodetectors, thermal radiation detectors, microwave radiation detectors, piezoelectric detectors, or acoustic wave detectors can be used to replace infrared photodetectors to realize the conversion of various detection input signals into luminous displays; for example, piezoelectric detector arrays and various thermal radiation detector arrays prepared in the form of micro-electromechanical systems (MEMs) can be integrated on the first surface of the substrate in the form of flip chips.

[0175] Obviously, the above embodiments of the present invention are only examples for clearly explaining the present invention, and are not intended to limit the implementation methods of the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention shall be included in the protection scope of the claims of the present invention.

Claims

1. A pixel unit for infrared detection and light-emitting display, characterized in that: include: an infrared photodetector, for detecting incident infrared signals and generating photocurrent; A current amplifier circuit, comprising a reset terminal for inputting a reset pulse signal, an input terminal for coupling and inputting a photocurrent generated by an infrared photodetector, and an output terminal for outputting a gain-amplified photocurrent; the current amplifier circuit controls the gain amplification factor of the photocurrent according to the reset pulse signal inputted from the reset terminal; A light-emitting display is coupled to the output end of the current amplifier circuit and is directly driven by the photocurrent after gain amplification by the current amplifier circuit to perform light-emitting display.

2. The infrared detection and light-emitting display pixel unit according to claim 1, characterized in that: The current amplification circuit further includes: A switching transistor is coupled between a first voltage source and an input terminal; the gate of the switching transistor is coupled as a reset terminal to input a reset pulse signal; the switching transistor is turned on or off according to the high or low level of the reset pulse signal, and controls the gain amplification factor of the photocurrent according to the integration time of the reset pulse signal; an amplifying transistor, coupled between the output terminal and the second voltage source; the gate of the amplifying transistor is coupled to the input terminal, and is used to perform gain amplification on the input photocurrent, and couple the gain-amplified photocurrent to output through the output terminal; A capacitor is coupled between the gate of the amplifying transistor and the second voltage source; When the switching transistor is turned on, the voltage across the capacitor is set to zero, and the output end of the amplifying transistor is set to zero. At this time, the light-emitting display is in a non-working state; when the switching transistor is turned off, the photocurrent generated by the infrared photodetector charges the capacitor. When the voltage across the capacitor is greater than the threshold voltage of the amplifying transistor, the photocurrent is amplified by the gain of the amplifying transistor and output and input into the light-emitting display. At this time, the light-emitting display is in a working state.

3. The infrared detection and light-emitting display pixel unit according to claim 2, characterized in that: The switch transistor and the amplifier transistor are N-type or P-type transistors, and the transistor includes a metal oxide semiconductor field effect transistor MOSFET or a thin film transistor TFT.

4. The infrared detection and light-emitting display pixel unit according to claim 2, characterized in that: When the switch transistor is a P-type transistor, the first voltage source is a high reference voltage source; when the switch transistor is an N-type transistor, the first voltage source is a low reference voltage source.

5. The infrared detection and light-emitting display pixel unit according to claim 2, characterized in that: When the amplifying transistor is a P-type transistor, the second voltage source is a high reference voltage source; when the amplifying transistor is an N-type transistor, the second voltage source is a low reference voltage source.

6. The pixel unit for infrared detection and light-emitting display according to any one of claims 2 to 5, characterized in that: The first voltage source and the second voltage source are both connected to the same voltage source.

7. The pixel unit for infrared detection and light-emitting display according to any one of claims 2 to 5, characterized in that: The first voltage source and the second voltage source are connected to different voltage sources respectively.

8. The pixel unit for infrared detection and light-emitting display according to any one of claims 2 to 5, characterized in that: The current amplification circuit is provided with at least one stage; Wherein, the output end of the previous current amplifier circuit is coupled to the input end of the next current amplifier circuit; The reset terminal of each stage of the current amplifier circuit is used to input a reset pulse signal; The output end of the last stage current amplifier circuit is used to couple and output the photocurrent after gain amplification to the light-emitting display for light-emitting display; The input end of the first-stage current amplifier circuit is used to couple the photocurrent generated by the input infrared photodetector.

9. The infrared detection and light-emitting display pixel unit according to claim 1, characterized in that: The current amplification circuit further includes: an amplifying transistor, coupled between the output terminal and the third voltage source; the gate of the amplifying transistor is coupled to the input terminal, and is used to perform gain amplification on the input photocurrent, and couple the gain-amplified photocurrent to output through the output terminal; A capacitor is coupled between the gate of the amplifying transistor and a third voltage source; One end of the infrared photoelectric detector is connected to the input end, and the other end of the infrared photoelectric detector is used as a reset end to input a reset pulse signal; When the infrared photodetector is in working state, the photocurrent it generates charges the capacitor. When the voltage across the capacitor is greater than the threshold voltage of the amplifier transistor, the photocurrent is amplified by the amplifier transistor gain and output and input into the light-emitting display. At this time, the light-emitting display is in working state.

10. The infrared detection luminous display pixel unit according to claim 9, characterized in that: The amplifying transistor is an N-type or P-type transistor, and the transistor includes a metal oxide semiconductor field effect transistor MOSFET or a thin film transistor TFT.

11. The infrared detection and light emitting display pixel unit according to claim 10, characterized in that: When the amplifying transistor is an N-type transistor, the third voltage source is a low reference voltage source; when the amplifying transistor is a P-type transistor, the third voltage source is a high reference voltage source.

12. The infrared detection luminous display pixel unit according to any one of claims 2 or 9, characterized in that: The capacitor is a separate capacitor device or a parasitic capacitor of the amplifier transistor.

13. The infrared detection luminous display pixel unit according to claim 1, characterized in that: The detection wavelength range of the infrared photoelectric detector includes 700-1000nm, 1000-2500nm, or 2.5-25um, or any combination thereof.

14. An imaging array device for infrared detection and luminous display, characterized in that: include: A substrate having a plurality of parallel current amplification circuits integrated therein; An infrared photoelectric detection pixel array is disposed on the first surface of the substrate and is composed of a plurality of infrared photoelectric detectors; A light-emitting display pixel array is disposed on the second surface of the substrate and is composed of a plurality of light-emitting displays; Wherein, each infrared photodetector, a corresponding current amplifying circuit and a light-emitting display form a pixel unit of infrared detection to light-emitting display as claimed in claim 1.

15. The infrared detection to light emitting display imaging array device according to claim 14, characterized in that: The substrate also includes an input terminal formed on the first surface for coupling with a first bottom metal electrode in the infrared photodetector; and an output terminal formed on the second surface for coupling with a second bottom metal electrode in the light-emitting display.

16. The infrared detection to light emitting display imaging array device according to claim 14, characterized in that: The infrared photodetector comprises at least a first bottom metal electrode, a photosensitive layer, and a first top metal electrode in order from bottom to top; the first bottom metal electrode is coupled to the input end of the current amplifier circuit; The photosensitive layer comprises an organic semiconductor in the form of a single-phase film or a D / A bulk heterojunction blended film, an inorganic semiconductor or a compound semiconductor in the form of a single phase or quantum dot nanoparticles, or a combination in a mixed form or a thin film stack; Wherein, D represents an organic molecule of an electron donor; A represents an organic molecule of an electron acceptor; The inorganic semiconductor includes Si, Ge, SiGe, CuInS in crystalline or polycrystalline form. x Se 2-x (0≤x≤2), CuInGa(S,Se), PbS, PbI2, PBI3, InGaAs, CdTe, HgCdTe nano-quantum dots, nano-quantum thin films or single-phase films; The organic semiconductor includes one or more organic molecules used as electron donors (D) and one or more organic molecules used as electron acceptors (A) to form an organic blend of D / A; The light-emitting display includes an organic light-emitting display, an inorganic light-emitting display, an organic-inorganic hybrid light-emitting display, a quantum dot light-emitting display, and a perovskite light-emitting display.

Images