Optical coupling structure, manufacturing method thereof and optical communication system

Abstract

The embodiment of the invention provides an optical coupling structure, a manufacturing method thereof and an optical communication system, the optical coupling structure comprises an alignment layer, a growth substrate and a light-emitting epitaxial layer which are sequentially stacked, the growth substrate is used for epitaxially manufacturing the light-emitting epitaxial layer and comprises a first through hole, and the light-emitting epitaxial layer is aligned with the first through hole; the alignment layer comprises a second through hole, and the second through hole is used for arranging an optical fiber input end and improving the stability of the optical fiber input end in the optical coupling structure; the optical coupling structure further comprises a clamping structure which is used for penetrating through the first through hole and the second through hole and can clamp and fix the alignment layer and the growth substrate, the overall stability of the optical coupling structure is effectively improved, the light-emitting epitaxial layer can be aligned to the input end of the optical fiber, and emergent light of the light-emitting epitaxial layer directly enters the input end of the optical fiber through the first through hole and the second through hole. And the light coupling efficiency is improved.

Description

Technical Field

[0001] The present application relates to the field of optical communication technology, and in particular to an optical coupling structure and a manufacturing method thereof, and an optical communication system. Background Art

[0002] Active optical cables (AOC) are commonly used signal transmission devices. They are generally used for high-speed, high-reliability interconnection between data centers, high-performance computers, large-capacity storage devices, etc. They are usually composed of integrated optoelectronic devices and optical fibers. The light source used is generally a semiconductor laser, such as vertical cavity surface emitting lasers (VCSEL) or edge-emitting distributed feedback lasers (DFB). Semiconductor lasers need to be above their threshold current to work properly, require relatively high power consumption, and have reliability risks under high temperature conditions. In contrast, micro LEDs are used as light sources, which can emit light under spontaneous radiation, are small in size, have low power consumption, and can have a longer life under high temperature conditions.

[0003] Since the divergence angle of micro LED light source is larger than that of semiconductor laser, there is no mature coupling solution between micro LED array and optical fiber in the industry. Therefore, it is necessary to find an optical coupling structure to improve the light coupling efficiency. Summary of the invention

[0004] In view of this, the embodiments of the present application provide an optical coupling structure and a manufacturing method thereof, and an optical communication system to solve the technical problem of low light coupling efficiency in the prior art.

[0005] According to one aspect of the present application, an embodiment of the present application provides an optical coupling structure, comprising: an alignment layer, a growth substrate and a light-emitting epitaxial layer stacked in sequence, the growth substrate being used for epitaxially producing the light-emitting epitaxial layer; the growth substrate comprising a first through hole, the light-emitting epitaxial layer being aligned with the first through hole; the alignment layer comprising a second through hole, an optical fiber input end being arranged in the second through hole; and further comprising: a snap-fit ​​structure, penetrating the first through hole and the second through hole, so that the light-emitting epitaxial layer is aligned with the optical fiber input end.

[0006] According to another aspect of the present application, an embodiment of the present application provides a method for manufacturing an optical coupling structure. The method for manufacturing the optical coupling structure includes: epitaxially manufacturing a light-emitting epitaxial layer on one side of a growth substrate, and thinning the other side of the growth substrate; etching the growth substrate to form a first through hole to expose the light-emitting epitaxial layer; etching an alignment layer to form a second through hole; an optical fiber input end is disposed in the second through hole; bonding the growth substrate and the alignment layer to form a snap-fit ​​structure, the snap-fit ​​structure passes through the first through hole and the second through hole, so that the light-emitting epitaxial layer is aligned with the optical fiber input end.

[0007] According to still another aspect of the present application, an embodiment of the present application provides an optical communication system, comprising the above-mentioned optical coupling structure.

[0008] The embodiment of the present application provides an optical coupling structure and a manufacturing method thereof, and an optical communication system. The optical coupling structure includes an alignment layer, a growth substrate and a light-emitting epitaxial layer stacked in sequence. The growth substrate is used for epitaxially manufacturing the light-emitting epitaxial layer. The growth substrate includes a first through hole, and the light-emitting epitaxial layer is aligned with the first through hole. The alignment layer includes a second through hole, and the second through hole is used to set the optical fiber input end to improve the stability of the optical fiber input end in the optical coupling structure; it also includes a clamping structure for passing through the first through hole and the second through hole, which can clamp and fix the alignment layer and the growth substrate, effectively improving the overall stability of the optical coupling structure, and can also make the light-emitting epitaxial layer aligned with the optical fiber input end. The light emitted by the light-emitting epitaxial layer directly enters the optical fiber input end through the first through hole and the second through hole, thereby improving the light coupling efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 A schematic diagram of an optical coupling structure provided in one embodiment of the present application;

[0010] Figure 2 for Figure 1 An enlarged schematic diagram of the engaging structure in FIG.

[0011] Figure 3 A structural schematic diagram of another locking structure provided in an embodiment of the present application;

[0012] Figure 4 A structural schematic diagram of another locking structure provided in an embodiment of the present application;

[0013] Figure 5 A structural schematic diagram of another locking structure provided in an embodiment of the present application;

[0014] Figure 6 A schematic diagram of another optical coupling structure provided in an embodiment of the present application;

[0015] Figure 7 for Figure 6 An enlarged schematic diagram of the engaging structure in FIG.

[0016] Figure 8 A structural schematic diagram of another locking structure provided in an embodiment of the present application;

[0017] Fig. 9 A schematic diagram of another optical coupling structure provided in an embodiment of the present application;

[0018] Fig.10 A schematic diagram of another optical coupling structure provided in an embodiment of the present application;

[0019] Fig.11 A schematic diagram of another optical coupling structure provided in an embodiment of the present application;

[0020] Fig.12 A schematic diagram of another optical coupling structure provided in an embodiment of the present application;

[0021] Fig.13 A schematic diagram of a three-dimensional structure of another optical coupling structure provided in an embodiment of the present application;

[0022] Fig.14 for Fig.13 The three-dimensional structure schematic diagram of the optical coupling structure before being engaged;

[0023] Fig.15 A schematic diagram of another optical coupling structure provided in an embodiment of the present application;

[0024] Fig.16 A schematic diagram of a process for manufacturing an optical coupling structure provided in one embodiment of the present application;

[0025] Figures 17 to 21 A schematic diagram of an intermediate structure for manufacturing an optical coupling structure provided in one embodiment of the present application;

[0026] Fig. 22 A schematic diagram of an optical communication system provided by an embodiment of the present application. DETAILED DESCRIPTION

[0027] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.

[0028] In order to solve the above problems, the present application provides an optical coupling structure. Figure 1 A schematic diagram of an optical coupling structure provided in an embodiment of the present application is shown in FIG. Figure 2 for Figure 1 An enlarged schematic diagram of the locking structure in FIG. Figure 1 and Figure 2As shown, the optical coupling structure includes an alignment layer 20, a growth substrate 10 and a light-emitting epitaxial layer 30 which are stacked in sequence. The growth substrate 10 is used for epitaxially producing the light-emitting epitaxial layer 30. The growth substrate 10 includes a first through hole 11, and the light-emitting epitaxial layer 30 is aligned with the first through hole 11; the alignment layer 20 includes a second through hole 21, and an optical fiber input end 51 is arranged in the second through hole 21; and also includes: a snap-fit ​​structure 40, which passes through the first through hole 11 and the second through hole 21, so that the light-emitting epitaxial layer 30 is aligned with the optical fiber input end 51.

[0029] It should be noted that if Figure 1 and Figure 2 As shown, the optical fiber input end 51 is arranged in the second through hole 21 of the alignment layer 20. It can be understood that the optical fiber is pre-aligned and bonded with the alignment layer 20, and then the alignment layer 20 and the growth substrate 10 for making the light-emitting epitaxial layer 30 are bonded, so as to avoid damage to the light-emitting epitaxial layer when the optical fiber is bonded to the light-emitting epitaxial layer later, and improve the stability of the optical fiber input end in the optical coupling structure; the clamping structure 40 passes through the first through hole 11 and the second through hole 21, and can clamp and fix the growth substrate 10 and the alignment layer 20, effectively improving the overall stability of the optical coupling structure, and can also make the light-emitting epitaxial layer 30 aligned with the optical fiber input end 51, and the light emitted by the light-emitting epitaxial layer 30 directly enters the optical fiber input end 51 through the first through hole 11 and the second through hole 21, thereby improving the light coupling efficiency.

[0030] It should be noted that the snap-fit ​​structure 40 can be a part of the growth substrate 10 located in the second through hole 21, snap-fitting the growth substrate 10 and the alignment layer 20 so that the light-emitting epitaxial layer 30 is aligned with the optical fiber input end 51 through the first through hole 11 and the second through hole 21; the snap-fit ​​structure 40 can also be a part of the alignment layer 20 located in the first through hole 11, snap-fitting the growth substrate 10 and the alignment layer 20 so that the light-emitting epitaxial layer 30 is aligned with the optical fiber input end 51 through the first through hole 11 and the second through hole 21.

[0031] In one embodiment, Figure 2 As shown, the growth substrate 10 includes a substrate protrusion 101 protruding toward the second through hole 21 of the alignment layer 20, and the substrate protrusion 101 and the second through hole 21 constitute a clamping structure 40. Specifically, the substrate protrusion 101 protrudes from the surface of the alignment layer 20 and can extend into the second through hole 21, thereby clamping and fixing the growth substrate 10 and the alignment layer 20, avoiding relative movement between the growth substrate 10 and the alignment layer 20, and effectively improving the overall stability of the optical coupling structure.

[0032] In one embodiment, Figure 2As shown, along the plane where the growth substrate 10 is located, the cross-sectional dimension a1 of the second through hole 21 at the substrate protrusion 101 is smaller than the cross-sectional dimension b of the optical fiber input end 51. Specifically, the cross-sectional dimension a1 of the second through hole 21 at the substrate protrusion 101 is smaller than the cross-sectional dimension b of the optical fiber input end 51, so that the substrate protrusion 101 and the second through hole 21 form a space for accommodating the optical fiber input end 51, and the substrate protrusion 101 blocks the optical fiber input end 51 from extending into the first through hole 11, preventing the optical fiber input end 51 from contacting the light-emitting epitaxial layer 30, thereby preventing the light-emitting epitaxial layer 30 from being damaged.

[0033] It should be noted that if Figure 1 As shown, the cross-sectional dimension b of the optical fiber input end 51 is equal to the cross-sectional dimension of the second through hole 21 of the alignment layer 20. Optionally, the cross-sectional dimension b of the optical fiber input end 51 is slightly smaller than the cross-sectional dimension of the second through hole 21, so that the optical fiber input end 51 can be easily inserted into the second through hole 21. In this case, a viscous material can be filled between the optical fiber input end 51 and the side wall of the alignment layer 20 to fix the optical fiber input end 51.

[0034] In one embodiment, Figure 3 A structural diagram of another locking structure provided in an embodiment of the present application is shown in FIG. Figure 3 As shown, the alignment layer 20 includes a first alignment layer protrusion 201 protruding toward the second through hole 21, and the first alignment layer protrusion 201 is located between the substrate protrusion 101 and the optical fiber input end 51. Specifically, the first alignment layer protrusion 201 is located in the middle of the second through hole 21 of the alignment layer 20, so a space for accommodating the optical fiber input end 51 can be formed on the side away from the growth substrate 10, which is used to fix the alignment layer 20 and the optical fiber in advance, and reduce the possibility of damaging the light-emitting epitaxial layer 30 due to a large force when fixing the optical fiber later; a space for accommodating the substrate protrusion 101 is formed on the side close to the growth substrate 10, so as to clamp and fix the growth substrate 10 and the alignment layer 20, and improve the overall stability of the optical coupling structure. Specifically, the cross-sectional dimension c1 of the second through hole 21 at the substrate protrusion 101 is smaller than the cross-sectional dimension b of the optical fiber input end 51.

[0035] Alternatively, if Figure 3 As shown, to facilitate the manufacture of the substrate protrusion 101, the cross-sectional dimension c1 of the second through hole 21 at the substrate protrusion 101 is equal to the cross-sectional dimension a1 of the first through hole 11. Optionally, the cross-sectional dimension c1 of the second through hole 21 at the substrate protrusion 101 is smaller than or larger than the cross-sectional dimension a1 of the first through hole 11. The embodiment of the present application does not limit the relative size of the cross-sectional dimension c1 and the cross-sectional dimension a1.

[0036] In one embodiment, the alignment layer 20 includes a first side wall A1, which is located on a side of the first alignment layer protrusion 201 close to the growth substrate 10, and the first side wall A1 is a slope, so that the substrate protrusion 101 of the growth substrate 10 can be more easily inserted into the second through hole at the first side wall A1, so as to facilitate alignment of the growth substrate 10 and the alignment layer 20; and / or, the alignment layer 20 includes a second side wall A2, which is located on a side of the first alignment layer protrusion 201 close to the optical fiber input end 51, and the second side wall A2 is a slope, so that the optical fiber input end 51 can be more easily inserted into the second through hole at the second side wall A2, so as to facilitate alignment of the optical fiber input end 51 and the alignment layer 20.

[0037] Specifically, Figure 4 A structural diagram of another locking structure provided in an embodiment of the present application is shown in FIG. Figure 4 As shown, the first side wall A1 and the second side wall A2 are both inclined surfaces. Optionally, in an optical coupling structure, the first side wall A1 is an inclined surface, and the second side wall A2 is perpendicular to the plane where the growth substrate 10 is located; Optionally, in an optical coupling structure, the first side wall A1 is perpendicular to the plane where the growth substrate 10 is located, and the second side wall A2 is an inclined surface.

[0038] Optionally, when the second side wall A2 is an inclined surface, a viscous material is filled between the optical fiber input end 51 and the second side wall A2 to fix the optical fiber. Optionally, a gap is included between the first side wall A1 and the substrate protrusion 101 to release stress generated when bonding the growth substrate 10 and the alignment layer 20.

[0039] Optionally, Figure 5 A structural diagram of another locking structure provided in an embodiment of the present application is shown in FIG. Figure 5 As shown, on the side of the first alignment layer protrusion 201 close to the growth substrate 10, the sidewall shape of the substrate protrusion 101 matches the shape of the first side wall A1; optionally, on the side of the first alignment layer protrusion 201 close to the optical fiber input end 51, the second side wall A2 is located at the opening end of the second through hole, and a vertical side wall matching the shape of the optical fiber input end 51 is also included between the second side wall A2 and the first alignment layer protrusion 201, and the vertical side wall is convenient for fixing the optical fiber input end 51.

[0040] In one embodiment, Figure 6 A schematic diagram of another optical coupling structure provided in an embodiment of the present application is shown. Figure 7 for Figure 6 An enlarged schematic diagram of the locking structure in FIG. Figure 6 and Figure 7As shown, the alignment layer 20 includes a second alignment layer protrusion 202 protruding toward the first through hole 11 of the growth substrate 10, the second alignment layer protrusion 202 and the first through hole 11 constitute a snap-fit ​​structure 40, the optical fiber input end 51 is located on the side of the second alignment layer protrusion 202 away from the growth substrate 10, and along the plane where the growth substrate 10 is located, the cross-sectional dimension c2 of the second through hole 21 at the second alignment layer protrusion 202 is smaller than the cross-sectional dimension b of the optical fiber input end 51. Specifically, the second alignment layer protrusion 202 protrudes toward the first through hole 11 of the growth substrate 10 to form a snap-fit ​​structure 40, which can snap-fit ​​and fix the growth substrate 10 and the alignment layer 20, effectively improving the overall stability of the optical coupling structure.

[0041] Alternatively, if Figure 7 As shown, the second alignment layer protrusion 202 also protrudes toward the second through hole 21 of the alignment layer 20 to form a space for accommodating the optical fiber input end 51; and the cross-sectional dimension c2 of the second through hole 21 at the second alignment layer protrusion 202 is smaller than the cross-sectional dimension b of the optical fiber input end 51. The second alignment layer protrusion 202 blocks the optical fiber input end 51 from extending into the first through hole 11 and prevents the optical fiber input end 51 from contacting the light-emitting epitaxial layer 30.

[0042] In one embodiment, Figure 8 A structural diagram of another locking structure provided in an embodiment of the present application is shown in FIG. Figure 1 and Figure 8 As shown, there is a gap 60 between the light-emitting epitaxial layer 30 and the optical fiber input end 51 , that is, the first through hole 11 between the light-emitting epitaxial layer 30 and the optical fiber input end 51 is not filled and is an air gap.

[0043] In one embodiment, an optical film is disposed in the gap 60, and the refractive index of the optical film is between the refractive index of the semiconductor film layer in the light-emitting epitaxial layer 30 close to the growth substrate 10 and the refractive index of the optical fiber input end 51. Specifically, the refractive indexes of the above three structures are gradually changed, and when the optical signal from the light-emitting epitaxial layer 30 enters the optical fiber through the above three structures, the light loss can be reduced and the coupling efficiency can be improved.

[0044] Optionally, the refractive index of the optical film is gradient. Optionally, taking the light-emitting epitaxial layer 30 as a GaN-based material as an example, the semiconductor film layer on the side of the light-emitting epitaxial layer 30 close to the growth substrate 10 is a nucleation layer AlN, the refractive index of AlN is 2.1, the material of the optical fiber input end is SiO2, the refractive index of SiO2 is 1.45, and the refractive index of the optical film is between 1.45 and 2.1; Optionally, the material of the optical film is SiON, and different refractive indices are adjusted by the nitrogen content or oxygen content of SiON to obtain an optical film with a specific refractive index or a gradient refractive index.

[0045] In one embodiment, a reflective layer 61 is disposed on the sidewall of the first through hole 11 or the second through hole 21 corresponding to the gap 60. Specifically, Figure 8 As shown, the reflective layer 61 is disposed on the side wall of the first through hole 11 corresponding to the gap 60. The light emitted by the light-emitting epitaxial layer 30 is reflected by the reflective layer 61 and then enters the optical fiber input end 51. The reflective layer 61 prevents the light from being absorbed by the growth substrate 10 or the alignment layer 20. Optionally, both the first through hole 11 and the second through hole 21 are covered by the reflective layer.

[0046] In one embodiment, Fig. 9 A schematic diagram of another optical coupling structure provided in an embodiment of the present application is shown in FIG. Fig. 9 As shown, at least part of the light emitting epitaxial layer 30 is located in the first through hole 11. Specifically, as Fig. 9 As shown, the light-emitting epitaxial layer 30 includes an N-type semiconductor layer 301, an active layer 302 and a P-type semiconductor layer 303 stacked in sequence, and the above three semiconductor layer structures are all located in the first through hole 11; optionally, only the first semiconductor layer 301 in the light-emitting epitaxial layer 30 is located in the first through hole 11, or the first semiconductor layer 301 and the active layer 302 in the light-emitting epitaxial layer 30 are located in the first through hole 11. It can be understood that the growth substrate 10 is a patterned structure with a groove, and at least part of the light-emitting epitaxial layer 30 is epitaxially produced in the groove of the growth substrate 10. It should be noted that a distance is maintained between the light-emitting epitaxial layer 30 and the optical fiber input end 51.

[0047] Optionally, before the light-emitting epitaxial layer 30 is epitaxially produced on the growth substrate 10 , a core layer, a buffer layer, etc. (not shown in the figure) are first produced.

[0048] In one embodiment, Fig.10 A schematic diagram of another optical coupling structure provided in an embodiment of the present application is shown in FIG. Fig.10 As shown, the optical coupling structure further includes an insulating structure 70 located between adjacent light-emitting epitaxial layers 30 . The insulating structure 70 is made of a light-proof and insulating material, which can also prevent light crosstalk between adjacent light-emitting epitaxial layers 30 .

[0049] In one embodiment, Figure 1 As shown, the light-emitting epitaxial layer 30 corresponding to each optical fiber input end 51 is a light-emitting unit 31, or, Fig.11 A schematic diagram of another optical coupling structure provided in an embodiment of the present application is shown in FIG. Fig.11 As shown, the light-emitting epitaxial layer 30 corresponding to each optical fiber input end 51 includes a plurality of light-emitting units 32 .

[0050] In one embodiment, Figure 1As shown, the cross-sectional size of the light-emitting unit is greater than 2 μm. Optionally, when the light-emitting epitaxial layer 30 corresponding to each optical fiber input end 51 is a light-emitting unit, along the plane where the growth substrate 10 is located, the cross-sectional size of each light-emitting unit 31 is greater than 5 μm; or Fig.11 As shown, when the light-emitting epitaxial layer 30 corresponding to each optical fiber input end 51 includes multiple light-emitting units, the cross-sectional size of each light-emitting unit 32 is 2-10 μm along the plane where the growth substrate 10 is located. Optionally, the light-emitting unit 31 or the light-emitting unit 32 is matched to a micro-LED unit.

[0051] In one embodiment, the material of the growth substrate is any one of Si, SiGe, SiC, GaN, AlN and sapphire. When Si is used, the first through hole is formed by an opaque silicon wall sidewall, which is conducive to limiting the light coupling to the optical fiber input end.

[0052] In one embodiment, the material of the alignment layer 20 is the same as that of the growth substrate 10, which is conducive to the bonding of the alignment layer 20 and the growth substrate 10. Optionally, the material of the alignment layer is different from that of the growth substrate, for example, the material of the growth substrate is Si, and the material of the alignment layer is SiO2, and those skilled in the art can use appropriate materials according to actual needs.

[0053] In one embodiment, the material of the light emitting epitaxial layer 30 is a III-V semiconductor material. Fig. 9 As shown, taking the light-emitting epitaxial layer 30 as a GaN-based material as an example, the light-emitting epitaxial layer 30 includes an N-type semiconductor layer 301, an active layer 302 and a P-type semiconductor layer 303, wherein the materials of the N-type semiconductor layer 301 and the P-type semiconductor layer 303 are GaN, and the active layer 302 is a multi-quantum well layer composed of any one of InGaN, AlGaN, AlInGaN and GaN. GaN-based materials can realize light of any wavelength band in the visible light region, expanding the application scenarios of the optical coupling structure. Optionally, the light-emitting epitaxial layer 30 is a GaAs-based material.

[0054] In one embodiment, the thickness of the growth substrate 10 is 5-150 μm, specifically, the thickness direction is perpendicular to the plane where the growth substrate is located. Optionally, the thickness of the growth substrate 10 is any one of 20 μm, 50 μm, 70 μm, 100 μm and 150 μm.

[0055] In one embodiment, the thickness of the alignment layer 20 is greater than or equal to 50 μm. Specifically, the thickness of the alignment layer is greater than the thickness of the growth substrate, which improves the stability of the optical fiber input end in the optical coupling structure. Optionally, the thickness of the alignment layer is 50 μm, 100 μm, 200 μm or 500 μm, etc.

[0056] In one embodiment, Fig.12 A schematic diagram of another optical coupling structure provided in an embodiment of the present application is shown in FIG. Fig.12 As shown, the optical coupling structure further includes a driving substrate 80, which is located on the side of the light-emitting epitaxial layer 30 away from the alignment layer 20. Specifically, the driving substrate 80 provides a driving signal for the light-emitting epitaxial layer 30, wherein the electrical connection method between the light-emitting epitaxial layer 30 and the driving substrate 80 is not limited.

[0057] It should be noted that in the above embodiments, the optical fiber input end 51 includes an optical fiber core located in the center and a cladding surrounding the optical fiber core. The cross-sectional dimension b of the optical fiber input end 51 refers to the outer circle dimension of the cladding.

[0058] In one embodiment, Fig.13 This is a schematic diagram of a three-dimensional structure of another optical coupling structure provided in an embodiment of the present application. Fig.14 for Fig.13 The three-dimensional structure diagram of the optical coupling structure before being engaged is shown in FIG. Fig.13 and Fig.14 As shown, there is at least one optical coupling unit 100, and the optical coupling unit 100 includes N light-emitting epitaxial layers 30 and N optical fiber cores 50, and the optical fiber cores 50 include optical fiber input ends 51 corresponding to the light-emitting epitaxial layers 30 one by one, wherein the N optical fiber cores 50 are wrapped by a cladding layer 52, and the optical fiber input ends 51 protrude from the cladding layer 52, and N is an integer greater than 0. Specifically, the N optical fiber input ends 51 are exposed from the cladding layer 52, and are inserted into the N second through holes 21 of the alignment layer 20, and finally correspond to the N light-emitting epitaxial layers 30 one by one.

[0059] Specifically, one optical coupling unit 100 corresponds to one multi-core optical fiber, and the multi-core optical fiber is a single-mode optical fiber. For example, in one optical coupling unit 100, N light-emitting epitaxial layers 30 emit light in the same wavelength range, and each optical fiber core of the multi-core optical fiber transmits light in the same wavelength range; or, N light-emitting epitaxial layers 30 emit light in different wavelength ranges, and each optical fiber core of the multi-core optical fiber transmits light in different wavelength ranges.

[0060] Alternatively, if Fig.13 and Fig.14 As shown, an optical coupling unit 100 includes 19 optical fiber cores 50 and 19 light-emitting epitaxial layers 30; optionally, the number N is not limited in this embodiment of the application.

[0061] Alternatively, if Fig.13 As shown, the optical fiber input end 51 is completely inserted into the second through hole 21 of the alignment layer 20, and the cladding layer 52 is in direct contact with the alignment layer 20, so as to avoid the breakage of the optical fiber core 50 due to excessive exposure of the optical fiber core 50.

[0062] It should be noted that if Fig.13As shown, the light emitting epitaxial layer 30 is illustrated as a whole layer.

[0063] In one embodiment, Fig.15 A schematic diagram of another optical coupling structure provided in an embodiment of the present application is shown in FIG. Fig.15 As shown, the optical fiber of the optical coupling structure is a single-core optical fiber. One optical coupling structure includes three optical fiber cores 50 and three light-emitting epitaxial layers 30 , and each optical fiber core 50 is wrapped by a cladding layer 52 .

[0064] An embodiment of the present application also provides a method for manufacturing an optical coupling structure. Fig.16 A schematic diagram of a process for manufacturing an optical coupling structure provided in one embodiment of the present application. Figures 17 to 21 A schematic diagram of an intermediate structure for manufacturing an optical coupling structure provided in an embodiment of the present application is shown in FIG. Fig.16 As shown, the production method includes:

[0065] Step S1: Fig.17 and Fig.18 As shown, a light-emitting epitaxial layer 30 is epitaxially produced on one side of the growth substrate 10, and the other side of the growth substrate 10 is thinned, that is, the side of the growth substrate 10 away from the light-emitting epitaxial layer 30 is thinned. Optionally, multiple light-emitting epitaxial layers 30 are produced by patterning the growth substrate, or, after the whole layer is produced, multiple light-emitting epitaxial layers 30 are formed by regional etching. Optionally, the thickness of the growth substrate 10 is thinned to 5-100 μm.

[0066] Step S2: Fig.19 As shown, the growth substrate 10 is etched from a side away from the light emitting epitaxial layer 30 to form a first through hole 11 to expose the light emitting epitaxial layer 30 .

[0067] Step S3: Fig. 20 As shown, the alignment layer 20 is etched to form a second through hole 21, and the optical fiber input end 51 is disposed in the second through hole 21. Optionally, the manner in which the optical fiber input end 51 is fixed in the alignment layer 20 is not limited.

[0068] Step S4: Fig.21 As shown, the growth substrate 10 and the alignment layer 20 are bonded to form a snap-fit ​​structure 40, which penetrates the first through hole 11 and the second through hole 21, so that the light-emitting epitaxial layer 30 is aligned with the optical fiber input end 51. Specifically, the snap-fit ​​structure 40 is located at the junction of the first through hole 11 and the second through hole 21, and the snap-fit ​​structure 40 is aligned and penetrates the first through hole 11 and the second through hole 21, so that the light-emitting epitaxial layer 30 is aligned with the optical fiber input end 51, and finally the following is obtained: Figure 1 The optical coupling structure shown.

[0069] In the manufacturing method provided in this embodiment, the optical fiber input end 51 is pre-aligned and bonded with the alignment layer 20, and then the alignment layer 20 and the growth substrate 10 for manufacturing the light-emitting epitaxial layer 30 are bonded, so as to avoid damage to the light-emitting epitaxial layer when the optical fiber is bonded to the light-emitting epitaxial layer later, and the stability of the optical fiber input end in the optical coupling structure can be improved; the clamping structure 40 at the junction of the first through hole 11 and the second through hole 21 is used to align and penetrate the first through hole 11 and the second through hole 21, and clamp the growth substrate 10 and the alignment layer 20, so as to effectively improve the overall stability of the optical coupling structure, and also enable the first through hole and the second through hole to be aligned with the light-emitting epitaxial layer, and the light emitted from the light-emitting epitaxial layer directly enters the optical fiber input end through the first through hole and the second through hole, so as to improve the light coupling efficiency.

[0070] An embodiment of the present application further provides an optical communication system, including the optical coupling structure in each of the above embodiments. Specifically, Fig. 22 A schematic diagram of an optical communication system provided in one embodiment of the present application is shown in FIG. Fig. 22 As shown, the optical communication system includes an optical coupling structure located at the transmitting end T1. Information is coupled to the optical fiber 501 by the optical coupling structure in the form of light waves, and then coupled to the receiving end R1 through the optical fiber 501.

[0071] An optical coupling structure provided in an embodiment of the present application includes an alignment layer, a growth substrate and a light-emitting epitaxial layer which are stacked in sequence, the growth substrate being used for epitaxially producing the light-emitting epitaxial layer, the growth substrate including a first through hole, the light-emitting epitaxial layer being aligned with the first through hole, the alignment layer including a second through hole, the second through hole being used for setting an optical fiber input end, thereby improving the stability of the optical fiber input end in the optical coupling structure; and also including a snap-fit ​​structure which is used for passing through the first through hole and the second through hole, and which can snap-fit ​​and fix the alignment layer and the growth substrate, thereby effectively improving the overall stability of the optical coupling structure, and can also make the light-emitting epitaxial layer be aligned with the optical fiber input end, and the light emitted from the light-emitting epitaxial layer directly enters the optical fiber input end through the first through hole and the second through hole, thereby improving the light coupling efficiency.

[0072] It should be understood that the term "including" and its variations used in this application are open inclusions, that is, "including but not limited to". The term "one embodiment" means "at least one embodiment". In this specification, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples without contradiction.

Claims

1. An optical coupling structure, characterized in that: include: An alignment layer, a growth substrate and a light-emitting epitaxial layer are stacked in sequence, wherein the growth substrate is used for epitaxially manufacturing the light-emitting epitaxial layer; The growth substrate comprises a first through hole, and the light-emitting epitaxial layer is aligned with the first through hole; The alignment layer comprises a second through hole, and the optical fiber input end is arranged in the second through hole; It also includes: a clamping structure that penetrates the first through hole and the second through hole, so that the light-emitting epitaxial layer is aligned with the optical fiber input end.

2. The optical coupling structure according to claim 1, characterized in that: The growth substrate includes a substrate protrusion protruding toward the second through hole of the alignment layer, and the substrate protrusion and the second through hole constitute the engaging structure.

3. The optical coupling structure according to claim 2, characterized in that: Along the plane where the growth substrate is located, the cross-sectional size of the second through hole at the protruding portion of the substrate is smaller than the cross-sectional size of the optical fiber input end.

4. The optical coupling structure according to claim 2, characterized in that: The alignment layer includes a first alignment layer protrusion protruding toward the second through hole, wherein the first alignment layer protrusion is located between the substrate protrusion and the optical fiber input end.

5. The optical coupling structure according to claim 4, characterized in that: The alignment layer comprises a first side wall, the first side wall is located on a side of the first alignment layer protrusion close to the growth substrate, and the first side wall is an inclined surface; and / or, The alignment layer comprises a second side wall, the second side wall is located on a side of the protruding portion of the first alignment layer close to the optical fiber input end, and the second side wall is a slope.

6. The optical coupling structure according to claim 1, characterized in that: The alignment layer includes a second alignment layer protrusion protruding toward the first through hole of the growth substrate, and the second alignment layer protrusion and the first through hole constitute the engaging structure. The optical fiber input end is located on a side of the second alignment layer protrusion away from the growth substrate, Along the plane where the growth substrate is located, a cross-sectional dimension of the second through hole at the protruding portion of the second alignment layer is smaller than a cross-sectional dimension of the optical fiber input end.

7. The optical coupling structure according to claim 1, characterized in that: A gap is included between the light-emitting epitaxial layer and the optical fiber input end.

8. The optical coupling structure according to claim 7, characterized in that: An optical film is arranged in the gap, and the refractive index of the optical film is between the refractive index of the semiconductor film layer in the light-emitting epitaxial layer close to the growth substrate and the refractive index of the optical fiber input end.

9. The optical coupling structure according to claim 7, characterized in that: A reflective layer is disposed on a side wall of the first through hole or the second through hole corresponding to the gap.

10. The optical coupling structure according to claim 1, characterized in that: At least a portion of the light emitting epitaxial layer is located in the first through hole.

11. The optical coupling structure according to claim 1, characterized in that: The light-emitting epitaxial layer corresponding to each optical fiber input end is a light-emitting unit, or, The light-emitting epitaxial layer corresponding to each optical fiber input end includes a plurality of light-emitting units.

12. The optical coupling structure according to claim 11, characterized in that: The cross-sectional size of the light-emitting unit is greater than 2 μm.

13. The optical coupling structure according to claim 1, characterized in that: There is at least one optical coupling unit, the optical coupling unit includes N light-emitting epitaxial layers and N optical fiber cores, the optical fiber cores include the optical fiber input ends corresponding to the light-emitting epitaxial layers one by one, Among them, N optical fiber cores are wrapped by a cladding layer, and the optical fiber input end protrudes from the cladding layer, and N is an integer greater than 0.

14. The optical coupling structure according to claim 1, characterized in that: The material of the growth substrate is any one of Si, SiGe, SiC, GaN, AlN and sapphire.

15. The optical coupling structure according to claim 1, characterized in that: The material of the light-emitting epitaxial layer is a III-V semiconductor material.

16. The optical coupling structure according to claim 1, characterized in that: The thickness of the growth substrate is 5-150 μm.

17. The optical coupling structure according to claim 1, characterized in that: The thickness of the alignment layer is greater than or equal to 50 μm.

18. The optical coupling structure according to claim 1, characterized in that: Also includes: The driving substrate is located at a side of the light-emitting epitaxial layer away from the alignment layer.

19. A method for manufacturing an optical coupling structure, characterized in that: include: epitaxially fabricating a light-emitting epitaxial layer on one side of a growth substrate, and thinning the other side of the growth substrate; Etching the growth substrate to form a first through hole to expose the light-emitting epitaxial layer; Etching the alignment layer to form a second through hole, and placing the optical fiber input end in the second through hole; The growth substrate and the alignment layer are bonded to form a snap-fit ​​structure, wherein the snap-fit ​​structure passes through the first through hole and the second through hole, so that the light-emitting epitaxial layer is aligned with the optical fiber input end.

20. An optical communication system, characterized in that: It comprises the optical coupling structure as claimed in any one of claims 1 to 18.

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