Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device, and relates to the technical field of display. The photoelectric device comprises a first electrode, a first carrier function layer and a second electrode which are arranged in a stacked mode. Wherein the material of the first carrier function layer comprises a first light-guide fiber. When the photoelectric device works, part of light can be refracted and reflected for multiple times in the photoelectric device, and the light-guide fiber in the first carrier function layer can capture the refracted light and the reflected light and enables the refracted light and the reflected light to be transmitted along the light-guide fiber; the light can form total internal reflection in the light-guide fiber, so that the loss of the light energy in the light-guide fiber transmission process is small, and the light energy can be effectively output; and after being guided by the light-guide fiber, the light energy is utilized more intensively and effectively, so that the light utilization rate of the photoelectric device is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an optoelectronic device, a method for preparing the optoelectronic device, and a display device including the optoelectronic device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). OLEDs have become the mainstream technology in the field of display technology due to their excellent display performance, such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLEDs have the advantages of saturated color and adjustable wavelength of emitted light, and high quantum yield of photoluminescence and electroluminescence, and have become a strong competitor to OLEDs in recent years.

[0003] At present, the light utilization rate of optoelectronic devices is low and needs to be further improved. Summary of the invention

[0004] In view of this, the present application provides a photoelectric device, aiming to improve the problem of low light utilization efficiency of existing photoelectric devices.

[0005] The embodiment of the present application is implemented as follows: an optoelectronic device includes: a first electrode, a first carrier functional layer, and a second electrode which are stacked; wherein the material of the first carrier functional layer includes a first optical fiber.

[0006] Optionally, in some embodiments of the present application, the angle between the connection direction of the head and tail ends of the first optical fiber and the thickness direction of the optoelectronic device is 0° to 5°; and / or

[0007] The first carrier functional layer is a first hole functional layer or a first electron functional layer;The materials of the first hole functional layer also include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2 ,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4- [phenyl vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, one or more of a second non-doped metal oxide particle, a metal sulfide, a metal selenide and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second non-doped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride;The material of the first electronic functional layer also includes one or more of first doped metal oxide particles, first non-doped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The material of the first non-doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, the metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, the doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, CdS, the IIIA-VA semiconductor materials include one or more of InP and GaP, and the IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS. ;

[0008] Optionally, in some embodiments of the present application, the first carrier functional layer includes a first sublayer and a second sublayer, the second sublayer is arranged between the first sublayer and the second electrode, and the material of the second sublayer includes the first optical fiber.

[0009] Optionally, in some embodiments of the present application, the first optical fiber includes one or more of a silicate optical fiber, a fluoride optical fiber and a quartz optical fiber; and / or

[0010] The connecting length between the head and tail ends of the first optical fiber is less than or equal to the thickness of the first carrier functional layer; and / or

[0011] The material of the first carrier functional layer further includes a first carrier functional material, and the volume ratio of the first carrier functional material to the first optical fiber is 10:(0.1-1); and / or

[0012] The first optical fibers are arranged in a linear array in the first carrier functional layer.

[0013] Optionally, in some embodiments of the present application, the optoelectronic device further comprises a light-emitting layer and a second carrier functional layer; the light-emitting layer is arranged between the second carrier functional layer and the first carrier functional layer, and the second carrier functional layer is arranged between the first electrode and the light-emitting layer;

[0014] When the first carrier functional layer is the first hole functional layer, the second carrier functional layer is a second electron functional layer; or when the first carrier functional layer is the first electron functional layer, the second carrier functional layer is a second hole functional layer.

[0015] Optionally, in some embodiments of the present application, the materials of the first electrode and the second electrode include one or more of metal, carbon material and metal oxide respectively; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, and the material of the metal oxide electrode is The material includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; and / or

[0016] The material of the light-emitting layer includes 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4"-tris(carbazole-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium], diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, polymers containing BN covalent bonds, HLCT materials, Exciplex luminescent materials, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, Cd ZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSe S, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs , GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, G aInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, CuInS2, CuInSe2, AgInS2, CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZ One or more of nSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, AMX3 and BMX3, where A is Cs+ ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of; B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n ≥ 2; and / or

[0017] The materials of the second hole functional layer include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3 ,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene [vinylidene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, non-doped graphene, second doped metal oxide particles, second non One or more of doped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, the metal nitride includes P-type gallium nitride; and / or

[0018] The material of the second electronic functional layer includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS.

[0019] Optionally, in some embodiments of the present application, the optoelectronic device is an upright optoelectronic device, the first carrier functional layer is a first electronic functional layer, and the material of the first electronic functional layer includes the first optical fiber; or

[0020] The optoelectronic device is an inverted optoelectronic device, the first carrier functional layer is a first hole functional layer, and the material of the first hole functional layer includes the first optical fiber.

[0021] Optionally, in some embodiments of the present application, the length of the connection between the head and tail ends of the first optical fiber is 10 nm to 30 nm; and / or

[0022] The average diameter of the first optical fiber is 1 μm to 100 μm; and / or

[0023] The thickness of the first carrier functional layer is 30nm to 50nm; and / or

[0024] The thickness of the first electrode is 7 nm to 20 nm; and / or

[0025] The thickness of the light-emitting layer is 10 nm to 30 nm; and / or

[0026] The thickness of the second electrode is 15 nm to 35 nm; and / or

[0027] The thickness of the second carrier functional layer is 30 nm to 50 nm.

[0028] Optionally, in some embodiments of the present application, the optoelectronic device further includes a packaging layer, the packaging layer is arranged on a side of the second electrode away from the first carrier functional layer, and the material of the packaging layer includes a second optical fiber.

[0029] Optionally, in some embodiments of the present application, the angle between the connection direction of the head and tail ends of the second optical fiber and the thickness direction of the optoelectronic device is 0° to 5°; and / or

[0030] The second optical fiber comprises one or more of a silicate optical fiber, a fluoride optical fiber and a quartz optical fiber; and / or

[0031] The connecting length between the head and tail ends of the second optical fiber is less than or equal to the thickness of the packaging layer; and / or

[0032] The material of the encapsulation layer also includes encapsulation material, and the encapsulation material includes one or more of epoxy resin, acrylic resin, polyester, polycarbonate, polypropylene, and polyethylene; and / or

[0033] The material of the packaging layer also includes packaging material, and the volume ratio of the packaging material to the second optical fiber is 10:(0.1-1.5); and / or

[0034] The second optical fibers are arranged in a linear array in the packaging layer.

[0035] Optionally, in some embodiments of the present application, the length of the connection between the head and tail ends of the second optical fiber is 0.03 μm to 4 μm; and / or

[0036] The average diameter of the second optical fiber is 1 μm to 100 μm; and / or

[0037] The thickness of the encapsulation layer is 0.1 μm to 30 μm.

[0038] Accordingly, an embodiment of the present application further provides a method for preparing a photoelectric device, comprising:

[0039] Providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode;

[0040] Providing a first optical fiber and a first carrier functional material, and arranging the first optical fiber and the first carrier functional material on the optoelectronic device preform to form a first carrier functional layer;

[0041] A second electrode is formed on the first carrier functional layer to obtain a photoelectric device.

[0042] Optionally, in some embodiments of the present application, the first optical fiber includes one or more of a silicate optical fiber, a fluoride optical fiber and a quartz optical fiber; and / or

[0043] The length of the connection between the first and the second ends of the first optical fiber is 10 nm to 30 nm; and / or

[0044] The average diameter of the first optical fiber is 1 μm to 100 μm; and / or

[0045] The thickness of the first carrier functional layer is 30nm to 50nm; and / or

[0046] The volume ratio of the first carrier functional material to the first optical fiber is 10:(0.1-1); and / or

[0047] The first optical fibers are arranged in a linear array in the first carrier functional layer.

[0048] Optionally, in some embodiments of the present application, the first optical fiber includes a first charged optical fiber, and the forming of the first carrier functional layer includes: arranging the first charged optical fiber and the first carrier functional material on the optoelectronic device preform, applying an electric field and / or a magnetic field to form the first carrier functional layer.

[0049] Optionally, in some embodiments of the present application, the intensity of the electric field is 10 2 V / m~10 3 V / m; and / or

[0050] The intensity of the magnetic field is 0.1T to 1T; and / or

[0051] The angle between the direction of the electric field and the thickness direction of the photoelectric device is 0° to 5°; and / or

[0052] The angle between the direction of the magnetic field and the thickness direction of the photoelectric device is 0° to 5°; and / or

[0053] The time for applying the electric field and / or magnetic field is 10s to 300s.

[0054] Optionally, in some embodiments of the present application, the optoelectronic device preform further includes a second carrier functional layer and a light-emitting layer sequentially stacked on the first electrode;

[0055] The first carrier functional layer is a first hole functional layer, and the second carrier functional layer is a second electron functional layer; or, the first carrier functional layer is a first electron functional layer, and the second carrier functional layer is a second hole functional layer.

[0056] Optionally, in some embodiments of the present application, after forming the second electrode, a packaging layer is further formed on the second electrode, including: providing a second optical fiber and a packaging material, arranging the second optical fiber and the packaging material on the second electrode to form a packaging layer, and obtaining a photoelectric device.

[0057] Optionally, in some embodiments of the present application, the second optical fiber includes a second charged optical fiber, and the forming of the encapsulation layer includes: arranging the second charged optical fiber and the encapsulation material on the second electrode, applying an electric field and / or a magnetic field to form the encapsulation layer.

[0058] Optionally, in some embodiments of the present application, the second optical fiber includes one or more of a silicate optical fiber, a fluoride optical fiber and a quartz optical fiber; and / or

[0059] The connecting length between the head and tail ends of the second optical fiber is less than or equal to the thickness of the packaging layer; and / or

[0060] The packaging material includes one or more of epoxy resin, acrylic resin, polyester, polycarbonate, polypropylene, and polyethylene; and / or

[0061] The volume ratio of the packaging material to the second optical fiber is 10:(0.1-1.5); and / or the second optical fiber is arranged in a linear array in the packaging layer.

[0062] Correspondingly, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device, or the optoelectronic device manufactured by the above-mentioned manufacturing method.

[0063] The optoelectronic device described in the present application introduces an optical fiber into the first carrier functional layer. When the optoelectronic device is working, part of the light will be refracted and reflected multiple times in the optoelectronic device. The optical fiber can capture the refracted light and reflected light of the optoelectronic device and make it propagate along the optical fiber; and the light can form total internal reflection in the optical fiber, so that the loss of light energy in the process of propagation in the optical fiber is small, and the light energy can be effectively output; after being guided by the optical fiber, the light energy can be more concentrated and effectively utilized, thereby improving the light utilization rate of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0065] Figure 1is a schematic diagram of the structure of the optoelectronic device provided in an embodiment of the present application;

[0066] Figure 2 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0067] Figure 3 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0068] Figure 4 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0069] Figure 5 It is a flow chart of the method for preparing a photoelectric device provided in an embodiment of the present application.

[0070] Reference numerals:

[0071] The first electrode 10 ; the light emitting layer 20 ; the first carrier functional layer 30 ; the first sublayer 301 ; the second sublayer 302 ; the second electrode 40 ; the second carrier functional layer 50 ; and the encapsulation layer 60 . DETAILED DESCRIPTION

[0072] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0073] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0074] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0075] In the present application, "at least one" means one or more, and "plurality" means two or more. "One or several", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0076] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0077] The technical solution of this application is as follows:

[0078] First, see Figure 1 An embodiment of the present application provides an optoelectronic device, comprising a first electrode 10, a first carrier functional layer 30 and a second electrode 40 which are stacked; wherein the material of the first carrier functional layer 30 comprises a first optical fiber.

[0079] It can be understood that an optical fiber is a flexible linear material with optical transmission function, which is usually composed of a core and a cladding. The core has a higher refractive index, while the cladding has a lower refractive index. When light enters the fiber, the light is reflected and refracted at the interface between the core and the cladding, forming total internal reflection, so that the light propagates along the fiber. Through this mechanism, optical fibers can effectively guide the propagation of light.

[0080] The optoelectronic device described in the present application introduces an optical fiber into the first carrier functional layer 30. When the optoelectronic device is working, part of the light will be refracted and reflected multiple times in the optoelectronic device. The optical fiber in the first carrier functional layer 30 can effectively capture the refracted light and reflected light of the optoelectronic device and propagate it along the optical fiber; and the light can form total internal reflection in the optical fiber, so that the loss of light energy in the process of propagation in the optical fiber is small, and the light energy can be effectively output; after being guided by the optical fiber, the light energy can be more concentrated and effectively utilized, thereby improving the light utilization rate of the optoelectronic device, and then improving the luminous efficiency of the optoelectronic device.

[0081] In some embodiments, the angle between the connecting direction of the head and tail ends of the first optical fiber and the thickness direction of the optoelectronic device is 0° to 5°, for example, 0°, 0.5°, 1°, 1.5°, 2°, 2.5°, 3°, 3.5°, 4°, 4.5°, etc. It should be noted that the first carrier functional layer 30 is three-dimensional, so the angle between the connecting direction of the head and tail ends of the first optical fiber and the thickness direction of the optoelectronic device can be the angle of the circumferential side of the thickness direction of the optoelectronic device.

[0082] It should be noted that when the optical fiber is straight, the direction of the line connecting the head and tail ends is equal to the length direction of the optical fiber, and the length of the line connecting the head and tail ends is also equal to the length of the optical fiber. When the optical fiber is curved, the length of the line connecting the head and tail ends is the longest length of the optical fiber in three-dimensional space, and the direction of the line connecting the head and tail ends is the direction of the longest length of the optical fiber in three-dimensional space.

[0083] Preferably, in some embodiments, the connection direction of the head and tail ends of the first optical fiber is parallel to the thickness direction of the optoelectronic device.

[0084] In some embodiments, the first carrier functional layer 30 is a first hole functional layer or a first electron functional layer.

[0085] Further, the material of the first hole functional layer also includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazolyl-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent Materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1, 4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles , one or more of a second undoped metal oxide particle, a metal sulfide, a metal selenide and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second undoped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0086] The material of the first electronic functional layer also includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS.

[0087] In some embodiments, the material of the first carrier functional layer 30 also includes a first carrier functional material, and the volume ratio of the first carrier functional material to the first optical fiber is 10:(0.1-1), for example, 10:(0.2-0.9), 10:(0.3-0.8), 10:(0.4-0.7), 10:(0.5-0.6), 10:(0.55-0.58), etc. Within the volume ratio range, it is beneficial for the first optical fiber to capture scattered light and reflected light and ensure the carrier migration effect of the first carrier functional layer 30.

[0088] In some embodiments, the connecting length of the head and tail ends of the first optical fiber is less than or equal to the thickness of the first carrier functional layer 30 .

[0089] Furthermore, the thickness of the first carrier functional layer 30 is 30 nm to 50 nm, for example, 32 nm to 48 nm, 35 nm to 46 nm, 36 nm to 45 nm, 38 nm to 42 nm, 39 nm to 40 nm, etc.

[0090] In some embodiments, the connecting length between the head and tail ends of the first optical fiber is 10 nm to 30 nm, for example, 12 nm to 28 nm, 14 nm to 26 nm, 15 nm to 25 nm, 16 nm to 22 nm, 18 nm to 20 nm, etc.

[0091] In some embodiments, the average diameter of the first optical fiber is 1 μm to 100 μm, for example, 10 nm to 90 nm, 20 nm to 80 nm, 30 nm to 70 nm, 40 nm to 60 nm, 50 nm to 55 nm, etc.

[0092] In some embodiments, the first optical fibers are arranged in a linear array in the first carrier functional layer 30 .

[0093] In some embodiments, the first optical fiber comprises an inorganic optical fiber. Further, the inorganic optical fiber comprises one or more of a silicate optical fiber, a fluoride optical fiber and a quartz optical fiber.

[0094] In some embodiments, the optoelectronic device further includes a light-emitting layer 20 , and the light-emitting layer 20 is disposed between the first electrode 10 and the first carrier functional layer 30 .

[0095] See also Figure 2 In some embodiments, the first carrier functional layer 30 includes a first sublayer 301 and a second sublayer 302, the second sublayer 302 is disposed between the first sublayer 301 and the second electrode 40, and the material of the second sublayer 302 includes the first optical fiber. The first sublayer 301 can prevent the first optical fiber from contacting the light-emitting layer 20 and affecting the interface between the light-emitting layer 20 and the second sublayer 302.

[0096] See also Figure 3 In some embodiments, the optoelectronic device further includes a second carrier functional layer 50 , and the second carrier functional layer 50 is disposed between the first electrode 10 and the light emitting layer 20 .

[0097] In some embodiments, the thickness of the second carrier functional layer 50 is 30 nm to 50 nm, for example, 32 nm to 48 nm, 35 nm to 46 nm, 36 nm to 45 nm, 38 nm to 42 nm, 39 nm to 40 nm, etc.

[0098] In some embodiments, when the first carrier functional layer 30 is the first hole functional layer, the second carrier functional layer 50 is a second electron functional layer.

[0099] In some other embodiments, when the first carrier functional layer 30 is the first electron functional layer, the second carrier functional layer 50 is a second hole functional layer.

[0100] The hole functional layer includes one or more of a hole injection layer and a hole transport layer, and the electron functional layer includes one or more of an electron injection layer and an electron transport layer.

[0101] In some embodiments, the materials of the first electrode 10 and the second electrode 40 respectively include one or more of metal, carbon material and metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode with a metal sandwiched between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2. Here, “ / ” represents a stacked structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer and an AZO layer stacked in sequence.

[0102] In some embodiments, the thickness of the first electrode 10 is 7 nm to 20 nm, for example, 8 nm to 19 nm, 9 nm to 18 nm, 10 nm to 16 nm, 11 nm to 15 nm, 12 nm to 13 nm, etc.

[0103] In some embodiments, the thickness of the second electrode 40 is 15 nm to 35 nm, for example, 16 nm to 32 nm, 18 nm to 30 nm, 20 nm to 28 nm, 22 nm to 27 nm, 25 nm to 26 nm, etc.

[0104] In some embodiments, the material of the light-emitting layer 20 includes one or more of an organic light-emitting material and a quantum dot light-emitting material.

[0105] The organic light-emitting material includes one or more of CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy)(4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium]), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing BN covalent bonds, HLCT (hybridized localized charge transfer excited state) materials, and Exciplex (exciplex) light-emitting materials.

[0106] The quantum dot luminescent material includes one or more of single structure quantum dots, core-shell structure quantum dots and perovskite type semiconductor materials.

[0107] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots can be respectively selected from but not limited to one or more of the group II-VI compounds, group IV-VI compounds, group III-V compounds and group I-III-VI compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound includes one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb. The I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2.

[0108] As an example, the core-shell structured quantum dots include one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0109] The perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor. The inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or

[0110] [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of the .

[0111] In some embodiments, the thickness of the light emitting layer 20 is 10 nm to 30 nm, for example, 12 nm to 28 nm, 14 nm to 26 nm, 15 nm to 24 nm, 16 nm to 22 nm, 18 nm to 20 nm, etc.

[0112] In some embodiments, the material of the second hole functional layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green emission Optical materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1 , 4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles particles, one or more of second non-doped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second non-doped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0113] In some embodiments, the material of the second electronic functional layer includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor material includes one or more of InP and GaP. The IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS.

[0114] In some embodiments, the optoelectronic device is an upright optoelectronic device, the first carrier functional layer 30 is a first electronic functional layer, and the material of the first electronic functional layer includes a first optical fiber.

[0115] In some other embodiments, the optoelectronic device is an inverted optoelectronic device, the first carrier functional layer 30 is a first hole functional layer, and the material of the first hole functional layer includes a first optical fiber.

[0116] See also Figure 4 In some embodiments, the optoelectronic device further includes a packaging layer 60, which is disposed on a side of the second electrode 40 away from the first carrier functional layer 30, and the material of the packaging layer 60 includes a packaging material and a second optical fiber.

[0117] In some embodiments, the angle between the connecting direction of the head and tail ends of the second optical fiber and the thickness direction of the optoelectronic device is 0° to 5°, for example, it can be 0°, 0.5°, 1°, 1.5°, 2°, 2.5°, 3°, 3.5°, 4°, 4.5°, etc.

[0118] Preferably, in some embodiments, the connection direction of the head and tail ends of the second optical fiber is parallel to the thickness direction of the optoelectronic device.

[0119] In some embodiments, the second optical fiber includes one or more of a silicate optical fiber, a fluoride optical fiber, and a quartz optical fiber.

[0120] In some embodiments, the material of the packaging layer also includes packaging material, and the volume ratio of the packaging material to the second optical fiber is 10:(0.1-1.5), for example, it can be 10:(0.2-1.2), 10:(0.3-1), 10:(0.4-0.9), 10:(0.5-0.8), 10:(0.6-0.7), etc.

[0121] In some embodiments, the connecting length of the head and tail ends of the second optical fiber is less than or equal to the thickness of the packaging layer 60 .

[0122] Furthermore, the encapsulation layer 60 has a thickness of 0.1 μm to 30 μm, for example, 1 μm to 28 μm, 5 μm to 25 μm, 10 μm to 22 μm, 12 μm to 20 μm, 15 μm to 18 μm, etc.

[0123] In some embodiments, the connecting length of the first and last ends of the second optical fiber is 0.03 μm to 4 μm, for example, 0.1 μm to 3 μm, 0.5 μm to 2.5 μm, 1 μm to 2.2 μm, 1.2 μm to 2 μm, 1.5 μm to 1.8 μm, etc.

[0124] In some embodiments, the average diameter of the first optical fiber is 1 μm to 100 μm, for example, 10 nm to 90 nm, 20 nm to 80 nm, 30 nm to 70 nm, 40 nm to 60 nm, 50 nm to 55 nm, etc.

[0125] In some embodiments, the second optical fibers are arranged in a linear array in the packaging layer 60 .

[0126] In some embodiments, the packaging material includes one or more of epoxy resin, acrylic resin, polyester, polycarbonate, polypropylene, and polyethylene.

[0127] Second, see Figure 5 The present application also provides a method for preparing a photoelectric device, comprising:

[0128] S11, providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode 10;

[0129] S12, providing a first optical fiber and a first carrier functional material dispersion, and placing the first optical fiber and the first carrier functional material on the optoelectronic device preform to form a first carrier functional layer 30;

[0130] S13, forming a second electrode 40 on the first carrier functional layer 30 to obtain a photoelectric device.

[0131] In the S11:

[0132] In some embodiments, the optoelectronic device preform further includes a light-emitting layer 20 stacked on the first electrode 10 .

[0133] In some embodiments, the optoelectronic device preform further includes a second carrier functional layer 50 , and the second carrier functional layer 50 is disposed between the first electrode 10 and the light emitting layer 20 .

[0134] In S12:

[0135] In some embodiments, the first optical fiber includes a first charged optical fiber. The forming of the first carrier functional layer 30 includes: placing the first charged optical fiber and the first carrier functional material on the optoelectronic device preform, applying an electric field and / or a magnetic field to form the first carrier functional layer 30.

[0136] It should be noted that the first charged optical fiber can be prepared by conventional methods in the art.

[0137] In at least one embodiment, the method for preparing the first charged optical fiber includes: providing a first optical fiber, and spraying a charged coating on the surface of the first optical fiber to obtain the first charged optical fiber.

[0138] In some embodiments, the charged coating includes one or more of polypyrrole, graphene, carbon nanotubes, polyaniline, and polythiophene.

[0139] In some embodiments, spraying the charged paint includes spraying the charged paint using a nozzle.

[0140] Further, in some embodiments, the distance between the nozzle and the optical fiber is 10 cm to 30 cm, for example, 12 cm to 28 cm, 15 cm to 26 cm, 16 cm to 25 cm, 18 cm to 24 cm, 20 cm to 22 cm, etc. Within the range of the distance, it is beneficial to spray the charged paint evenly.

[0141] In some embodiments, the spraying pressure of the nozzle is 200 kPa to 1000 kPa, for example, 300 kPa to 900 kPa, 400 kPa to 800 kPa, 500 kPa to 700 kPa, 600 kPa to 680 kPa, 620 kPa to 650 kPa, etc. Within the spraying pressure range, the adhesion of the charged coating on the surface of the first optical fiber can be improved without causing waste of the charged coating.

[0142] In some embodiments, the spraying speed of the nozzle is 15 cm / s to 60 cm / s, for example, 20 cm / s to 55 cm / s, 22 cm / s to 50 cm / s, 25 cm / s to 45 cm / s, 28 cm / s to 40 cm / s, 30 cm / s to 35 cm / s, etc. Within the spraying speed range, it is beneficial for the charged coating to evenly cover the surface of the first conductive fiber.

[0143] In some embodiments, disposing the first optical fiber and the first carrier functional material on the optoelectronic device preform includes: providing a first carrier functional material dispersion, the first carrier functional material dispersion including a first carrier functional material and a solvent, mixing the first optical fiber and the first carrier functional material dispersion, and disposing them on the optoelectronic device preform.

[0144] In some embodiments, the solvent includes one or more of ethanol, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, ethanol, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide (DMSO), acetone, acetophenone, tetrahydrofuran (THF), N,N-dimethylformamide (DMF), ethyl acetate, pyrrole, butyric acid, and cresol.

[0145] In some embodiments, the volume ratio of the first optical fiber and the first carrier functional material is 10:(0.1-1), for example, it can be 10:(0.2-0.9), 10:(0.3-0.8), 10:(0.4-0.7), 10:(0.5-0.6), 10:(0.55-0.58), etc.

[0146] In some embodiments, the mixing of the first optical fiber and the first carrier functional material dispersion includes stirring.

[0147] Further, the stirring speed is 100 rpm to 200 rpm, for example, 110 rpm to 190 rpm, 120 rpm to 180 rpm, 130 rpm to 170 rpm, 140 rpm to 160 rpm, 150 rpm to 155 rpm, etc.; the stirring time is 5 min to 20 min, for example, 6 min to 18 min, 7 min to 16 min, 8 min to 15 min, 9 min to 14 min, 10 min to 12 min, etc.; the stirring is performed at room temperature. In this way, the first optical fiber and the first carrier functional material dispersion are in full and uniform contact.

[0148] It is understood that the applied electric field and / or magnetic field can induce the first electrically-charged optical fibers to be orderly arranged along a direction perpendicular to the thickness of the optoelectronic device preform.

[0149] In some embodiments, the strength of the electric field is 10 2 V / m~10 3 V / m, for example, it can be 200V / m~900V / m, 300V / m~800V / m, 400V / m~700V / m, 500V / m~600V / m, etc.

[0150] In some embodiments, the strength of the magnetic field is 0.1T to 1T, for example, it can be 0.2T to 0.9T, 0.3T to 0.8T, 0.4T to 0.7T, 0.5T to 0.6T, etc.

[0151] In some embodiments, the time for applying the electric field and / or magnetic field is 10s to 300s, for example, 20s to 280s, 50s to 250s, 80s to 220s, 100s to 200s, 120s to 150s, etc.

[0152] In some embodiments, the angle between the direction of the electric field and the thickness direction of the optoelectronic device is 0° to 5°.

[0153] In some embodiments, the angle between the direction of the magnetic field and the thickness direction of the optoelectronic device is 0° to 5°.

[0154] In some embodiments, the applying of the electric field and / or magnetic field further includes annealing.

[0155] In some embodiments, the annealing temperature is 100°C to 150°C, for example, 105°C to 148°C, 108°C to 145°C, 110°C to 140°C, 115°C to 135°C, 120°C to 130°C, etc. The annealing time is 5min to 30min, for example, 6min to 28min, 8min to 25min, 10min to 22min, 12min to 20min, 15min to 18min, etc. In this way, it is beneficial to remove the solvent and solidify into a uniform and dense first carrier functional layer 30.

[0156] In S13:

[0157] In some embodiments, after forming the second electrode 40, the step further includes forming a packaging layer 60 on the second electrode 40, including: providing a second optical fiber and a packaging material, placing the second optical fiber and the packaging material on the second electrode 40 to form a packaging layer 60, and obtaining a photoelectric device.

[0158] The method for forming the encapsulation layer 60 is similar to the method for obtaining the first carrier functional layer 30, and will not be described in detail here. It should be noted that the volume ratio of the encapsulation material to the second optical fiber is 10:(0.1-1.5), for example, 10:(0.2-1.2), 10:(0.3-1), 10:(0.4-0.9), 10:(0.5-0.8), 10:(0.6-0.7), etc.

[0159] In some embodiments, the second optical fiber includes a second charged optical fiber, and forming the encapsulation layer 60 includes: placing the second charged optical fiber and the encapsulation material on the second electrode 40 , applying an electric field and / or a magnetic field to form the encapsulation layer 60 .

[0160] The materials and thicknesses of the first electrode 10, the second carrier functional layer 50, the light-emitting layer 20, the third carrier functional layer 50, the first carrier functional layer 30, the second electrode 40, the packaging layer 60, and the material of the optical fiber are as described above and will not be repeated here.

[0161] In a third aspect, the present application also provides a display device, which includes the above-mentioned optoelectronic device.

[0162] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0163] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0164] Example 1

[0165] This device embodiment provides a photoelectric device, and the preparation method is as follows:

[0166] Providing an ITO glass, cleaning the ITO glass with a cleaning agent to remove stains on the surface, then ultrasonically cleaning the ITO glass with deionized water, isopropyl acetone, acetone and deionized water for 20 minutes respectively, and then drying with nitrogen to obtain an ITO anode with a thickness of 30 nm;

[0167] A TFB solution with a concentration of 8 mg / mL was placed on the ITO anode and spin-coated at a speed of 5000 rpm for 30 seconds, followed by annealing at a temperature of 150°C for 15 minutes to obtain a 30 nm hole functional layer;

[0168] The quantum dots with CdZnSeS as the core and ZnS as the shell were dissolved in n-octane to prepare a quantum dot solution with a concentration of 20 mg / mL. The quantum dot solution was placed on the hole functional layer and spin-coated at a speed of 2000 rpm for 30 seconds. The coating was annealed at 100°C for 10 minutes to obtain a 40 nm light-emitting layer.

[0169] Provide silicate optical fiber, clean and dry it, spray polypyrrole, spray distance is 30cm, spray speed is 30cm / s, spray pressure is 300kPa, time is 20s, and charged silicate optical fiber is obtained. Mix 30mg / mL ZnO ethanol dispersion and 20nm charged silicate optical fiber, the volume ratio of ZnO to silicate optical fiber is 10:0.5, set on the light-emitting layer, spin coating, spin coating speed is 3000rpm, time is 30s, and then under the electric field strength of 10 2 V / m, placed in an electromagnetic field with a magnetic field strength of 0.5 T for 1 min, annealed at 120 °C for 10 min, and a first electronic sublayer of 30 nm was obtained;

[0170] Silver is evaporated on the electronic functional layer, and the vacuum degree is not higher than 3x10 -4 Pa, the speed is 1 Å / s, the time is 100 s, and the cathode thickness is 50 nm;

[0171] An epoxy resin is disposed on the cathode to form a packaging layer to obtain a photoelectric device.

[0172] Example 2

[0173] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the silicate optical fiber is replaced by a fluoride optical fiber.

[0174] Example 3

[0175] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the silicate optical fiber is replaced by a quartz optical fiber.

[0176] Example 4

[0177] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the volume ratio of ZnO to silicate optical fiber is 10:1.

[0178] Example 5

[0179] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the volume ratio of ZnO to silicate optical fiber is 10:0.1.

[0180] Example 6

[0181] This embodiment is basically the same as the embodiment 1, except that the length of the connection between the head and tail ends of the silicate optical fiber in this embodiment is 10 nm.

[0182] Example 7

[0183] This embodiment is basically the same as the embodiment 1, except that the length of the connection between the head and tail ends of the silicate optical fiber in this embodiment is 29 nm.

[0184] Example 8

[0185] This embodiment is basically the same as Embodiment 1, except that, in this embodiment, an ethanol dispersion of ZnO is disposed on the light-emitting layer, and the second electronic sublayer is obtained by spin coating and annealing, and then a first electronic sublayer is formed on the second electronic sublayer, wherein the thickness of the second electronic sublayer is 20 nm.

[0186] Example 9

[0187] This embodiment is basically the same as the embodiment 1, except that the preparation method of the encapsulation layer in this embodiment is as follows: provide a silicate optical fiber, spray polypyrrole after cleaning and drying, the spraying distance is 30 cm, the spraying speed is 30 cm / s, the spraying pressure is 300 kPa, and the time is 20 s to obtain a charged silicate optical fiber, mix epoxy resin and a charged silicate optical fiber with a length of 20 nm, the volume ratio of epoxy resin to silicate optical fiber is 10:1, set on the cathode, and then under an electric field strength of 10 2 V / m, and stand still for 1 min in an electromagnetic field with a magnetic field strength of 0.5 T, and then cure at a temperature of 150°C for 15 min to obtain a 20 μm encapsulation layer.

[0188] Example 10

[0189] This embodiment is basically the same as the embodiment 8, except that the preparation method of the encapsulation layer in this embodiment is as follows: provide a silicate optical fiber, spray polypyrrole after cleaning and drying, the spraying distance is 30 cm, the spraying speed is 30 cm / s, the spraying pressure is 300 kPa, and the time is 20 s to obtain a charged silicate optical fiber, mix epoxy resin and a charged silicate optical fiber with a length of 20 nm, the volume ratio of epoxy resin to silicate optical fiber is 10:1, set on the cathode, and then under an electric field strength of 10 2 V / m, and stand still for 1 min in an electromagnetic field with a magnetic field strength of 0.5 T, and then cure at a temperature of 150°C for 15 min to obtain a 20 μm encapsulation layer.

[0190] Embodiment 11

[0191] This embodiment is basically the same as embodiment 1, except that, in this embodiment, a cathode, an electronic functional layer, and a light-emitting layer are prepared first, and then a hole functional layer, an anode, and an encapsulation layer are prepared; wherein, the electronic functional layer is provided by: 100 mL of an ethanol dispersion of ZnO with a concentration of 30 mg / mL is provided on the cathode, and spin-coated at a speed of 3000 rpm for 30 seconds, and annealed at 80° C. for 30 minutes to form an electronic functional layer with a thickness of 30 nm; the hole functional layer is provided by: providing silicate The charged silicate optical fiber was sprayed with polypyrrole after cleaning and drying, with a spraying distance of 30 cm, a spraying speed of 30 cm / s, a spraying pressure of 300 kPa, and a time of 20 s to obtain a charged silicate optical fiber. A TFB solution with a concentration of 8 mg / mL and a charged silicate optical fiber with a length of 20 nm were mixed, and the volume ratio of TFB to silicate optical fiber was 10:0.5. The charged silicate optical fiber was placed on the light-emitting layer and spin-coated at a speed of 5000 rpm for 30 s, and then the charged silicate optical fiber was heated to 100 rpm under an electric field strength of 10 2 V / m, and placed in an electromagnetic field with a magnetic field strength of 0.5 T for 1 min, followed by annealing at a temperature of 150° C. and an annealing time of 15 min to obtain a first hole sublayer of 30 nm.

[0192] Example 12

[0193] This embodiment is basically the same as Embodiment 11, except that, in this embodiment, the TFB solution is disposed on the light-emitting layer, and the second hole sublayer is obtained by spin coating and annealing, and then the first hole sublayer is formed on the second hole sublayer, wherein the thickness of the second hole sublayer is 20 nm.

[0194] Embodiment 13

[0195] This embodiment is basically the same as embodiment 11, except that the preparation method of the encapsulation layer in this embodiment is as follows: provide a silicate optical fiber, spray polypyrrole after cleaning and drying, the spraying distance is 30 cm, the spraying speed is 30 cm / s, the spraying pressure is 300 kPa, and the time is 20 s to obtain a charged silicate optical fiber, mix epoxy resin and a charged silicate optical fiber with a length of 20 nm, the volume ratio of epoxy resin to silicate optical fiber is 10:1, set on the anode, and then under an electric field strength of 10 2 V / m, and stand still for 1 min in an electromagnetic field with a magnetic field strength of 0.5 T, and then cure at a temperature of 150°C for 15 min to obtain a 20 μm encapsulation layer.

[0196] Embodiment 14

[0197] This embodiment is basically the same as embodiment 12, except that the method for preparing the encapsulation layer in this embodiment is as follows: provide a silicate optical fiber, spray polypyrrole after cleaning and drying, the spraying distance is 30 cm, the spraying speed is 30 cm / s, the spraying pressure is 300 kPa, and the time is 20 s to obtain a charged silicate optical fiber, mix epoxy resin and a charged silicate optical fiber with a length of 20 nm, the volume ratio of epoxy resin to silicate optical fiber is 10:1, set on the anode, and then place the charged silicate optical fiber on the anode at an electric field strength of 10 2 V / m, and stand still for 1 min in an electromagnetic field with a magnetic field strength of 0.5 T, and then cure at a temperature of 150°C for 15 min to obtain a 20 μm encapsulation layer.

[0198] Comparative Example 1

[0199] This comparative example is basically the same as Example 1, except that the preparation method of the first electronic functional layer in this comparative example includes: placing 100 mL of 30 mg / mL ZnO ethanol dispersion on the cathode, spin coating at a speed of 3000 rpm for 30 s, annealing at 80°C for 30 min, and forming an electronic functional layer with a thickness of 30 nm.

[0200] Comparative Example 2

[0201] This comparative example is basically the same as comparative example 1, except that the method for preparing the encapsulation layer of the optoelectronic device in this comparative example includes: providing a silicate optical fiber, mixing the epoxy resin and the silicate optical fiber with a length of 20 nm, arranging them on a cathode, and then curing them at a curing temperature of 150° C. for 15 minutes to obtain a 20 μm encapsulation layer.

[0202] Comparative Example 3

[0203] This comparative example is basically the same as comparative example 10, except that the preparation method of the hole functional layer in this comparative example includes: placing a TFB solution with a concentration of 8 mg / mL on the light-emitting layer, spin coating, the spin coating speed is 5000 rpm, the time is 30 s, and then annealing, the annealing temperature is 150°C, the annealing time is 15 min, and a 30 nm hole functional layer is obtained.

[0204] The maximum brightness, TP5, T95@1k nit and current efficiency CE of the optoelectronic devices in Examples 1 to 14 and Comparative Examples 1 to 3 were tested, and the test results were shown in Table 1.

[0205] The brightness is measured by a photometer, and the current efficiency is the brightness divided by the injected current density. The test method of T95@1knit is: using a 128-channel life test system customized by Guangzhou New Vision Company, the system architecture is a constant voltage and constant current source to drive QLED, test the change of voltage or current, the photodiode detector and test system test the brightness (photocurrent) change of QLED, the brightness meter test calibrates the brightness (photocurrent) of QLED, and obtains the time it takes for the initial brightness of the light-emitting diode to decay to 95%, and converts it to the aging time under 1k nit.

[0206] Table 1

[0207]

[0208]

[0209] From Table 1, we can see that:

[0210] It can be seen from Examples 1 to 3 and Comparative Example 1 that the replacement of the optical fiber material has little effect on the maximum brightness, service life and current efficiency of the optoelectronic device. The silicate optical fiber and ZnO as the material of the electronic functional layer have a slightly better effect on the performance of the optoelectronic device than the quartz optical fiber and the fluoride optical fiber. The performance of the optoelectronic device of Examples 1 to 3 is significantly improved compared with that of Comparative Example 1, indicating that doping the optical fiber in the electronic functional layer is beneficial to improving the luminous efficiency of the optoelectronic device and extending the service life of the optoelectronic device.

[0211] It can be seen from Example 1, Examples 4 to 7 and Comparative Example 1 that the performance of the optoelectronic devices of Example 1 and Examples 4 to 7 is significantly higher than that of the optoelectronic device of Comparative Example 1, while there is no significant difference between the performance of the optoelectronic devices of Example 1 and Examples 4 to 7, which indicates that the amount and length of the optical fiber have little effect on the performance of the optoelectronic device, and both can effectively improve the luminous efficiency and service life of the optoelectronic device;

[0212] It can be seen from Example 1, Examples 8 to 10 and Comparative Examples 1 to 2 that the addition of a single ZnO electronic functional layer has a slight improvement effect on the performance of the optoelectronic device of Example 1, but adding an optical fiber to the encapsulation layer of the optoelectronic device can significantly improve the maximum brightness, service life and current efficiency of the optoelectronic device. At the same time, adding a ZnO electronic functional layer and adding an optical fiber to the encapsulation layer of the optoelectronic device can significantly improve the optoelectronic performance of the optoelectronic device. In Comparative Example 2, only the optical fiber is arranged in the encapsulation layer, and the performance of the optoelectronic device is worse than that of the optoelectronic device of Example 9, indicating that the optical fiber is arranged in the electronic functional layer and induced to be arranged in an orderly manner, which has a significant improvement effect on the performance of the optoelectronic device.

[0213] It can be seen from Example 1, Example 11 and Comparative Example 3 that the performance of the upright photoelectric device is better than that of the inverted photoelectric device, but the maximum brightness, service life and current efficiency of the photoelectric device of Example 10 are still significantly improved compared with the inverted photoelectric device of Comparative Example 3;

[0214] It can be seen from Examples 11 to 14 and Comparative Example 3 that, for an inverted photoelectric device, adding a conventional hole functional layer between the light-emitting layer and the hole functional layer doped with optical fibers has a slight improvement effect on the performance of the photoelectric device. Doping optical fibers in the encapsulation layer of the inverted photoelectric device can significantly improve the light utilization rate of the photoelectric device. At the same time, adding a conventional hole functional layer and doping optical fibers in the encapsulation layer can significantly improve the luminous efficiency and service life of the photoelectric device compared to the photoelectric device of Comparative Example 3.

[0215] The optoelectronic devices and their preparation methods, and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, characterized in that: include: A first electrode, a first carrier functional layer and a second electrode are stacked; wherein the material of the first carrier functional layer includes a first optical fiber.

2. The optoelectronic device according to claim 1, characterized in that The angle between the connecting direction of the head and tail ends of the first optical fiber and the thickness direction of the optoelectronic device is 0° to 5°; and / or The first carrier functional layer is a first hole functional layer or a first electron functional layer;The materials of the first hole functional layer also include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2 ,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4- [phenyl vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, one or more of a second non-doped metal oxide particle, a metal sulfide, a metal selenide and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second non-doped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride;The material of the first electronic functional layer also includes one or more of first doped metal oxide particles, first non-doped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The material of the first non-doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, the metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, the doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, CdS, the IIIA-VA semiconductor materials include one or more of InP and GaP, and the IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS. ; 3. The optoelectronic device according to claim 1 or 2, characterized in that: The first carrier functional layer includes a first sublayer and a second sublayer, the second sublayer is arranged between the first sublayer and the second electrode, and the material of the second sublayer includes the first optical fiber.

4. The optoelectronic device according to claim 1, characterized in that The first optical fiber comprises one or more of a silicate optical fiber, a fluoride optical fiber and a quartz optical fiber; and / or The connecting length between the head and tail ends of the first optical fiber is less than or equal to the thickness of the first carrier functional layer; and / or The material of the first carrier functional layer further includes a first carrier functional material, and the volume ratio of the first carrier functional material to the first optical fiber is 10:(0.1-1); and / or The first optical fibers are arranged in a linear array in the first carrier functional layer.

5. The optoelectronic device according to claim 1, wherein: The optoelectronic device further comprises a light-emitting layer and a second carrier functional layer; the light-emitting layer is arranged between the second carrier functional layer and the first carrier functional layer, and the second carrier functional layer is arranged between the first electrode and the light-emitting layer; When the first carrier functional layer is the first hole functional layer, the second carrier functional layer is a second electron functional layer; or when the first carrier functional layer is the first electron functional layer, the second carrier functional layer is a second hole functional layer.

6. The optoelectronic device according to claim 5, characterized in that The materials of the first electrode and the second electrode respectively include one or more of metal, carbon material and metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode with a metal sandwiched between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; and / or The material of the light-emitting layer includes 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4"-tris(carbazole-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium], diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, polymers containing BN covalent bonds, HLCT materials, Exciplex luminescent materials, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, Cd ZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSe S, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs , GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, G aInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, CuInS2, CuInSe2, AgInS2, CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZ One or more of nSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, AMX3 and BMX3, where A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of; B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n ≥ 2; and / or The materials of the second hole functional layer include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3 ,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene [vinylidene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl benzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, non-doped graphene, second doped metal oxide particles, second non One or more of doped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, the metal nitride includes P-type gallium nitride; and / or The material of the second electronic functional layer includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS.

7. The optoelectronic device according to claim 1, characterized in that The optoelectronic device is an upright optoelectronic device, the first carrier functional layer is a first electronic functional layer, and the material of the first electronic functional layer includes the first optical fiber; or The optoelectronic device is an inverted optoelectronic device, the first carrier functional layer is a first hole functional layer, and the material of the first hole functional layer includes the first optical fiber.

8. The optoelectronic device according to claim 5, characterized in that The length of the connection between the first and the second ends of the first optical fiber is 10 nm to 30 nm; and / or The average diameter of the first optical fiber is 1 μm to 100 μm; and / or The thickness of the first carrier functional layer is 30nm to 50nm; and / or The thickness of the first electrode is 7 nm to 20 nm; and / or The thickness of the light-emitting layer is 10 nm to 30 nm; and / or The thickness of the second electrode is 15 nm to 35 nm; and / or The thickness of the second carrier functional layer is 30 nm to 50 nm.

9. The optoelectronic device according to claim 1, characterized in that The optoelectronic device further comprises a packaging layer, which is arranged on a side of the second electrode away from the first carrier functional layer, and a material of the packaging layer comprises a second optical fiber.

10. The optoelectronic device according to claim 9, characterized in that The angle between the connecting direction of the head and tail ends of the second optical fiber and the thickness direction of the optoelectronic device is 0° to 5°; and / or The second optical fiber comprises one or more of a silicate optical fiber, a fluoride optical fiber and a quartz optical fiber; and / or The connecting length between the head and tail ends of the second optical fiber is less than or equal to the thickness of the packaging layer; and / or The material of the encapsulation layer also includes encapsulation material, and the encapsulation material includes one or more of epoxy resin, acrylic resin, polyester, polycarbonate, polypropylene, and polyethylene; and / or The material of the packaging layer also includes packaging material, and the volume ratio of the packaging material to the second optical fiber is 10:(0.1-1.5); and / or The second optical fibers are arranged in a linear array in the packaging layer.

11. The optoelectronic device according to claim 9, characterized in that The length of the connection between the first and the last ends of the second optical fiber is 0.03 μm to 4 μm; and / or The average diameter of the second optical fiber is 1 μm to 100 μm; and / or The thickness of the encapsulation layer is 0.1 μm to 30 μm.

12. A method for preparing a photoelectric device, characterized in that: include: Providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode; Providing a first optical fiber and a first carrier functional material, and arranging the first optical fiber and the first carrier functional material on the optoelectronic device preform to form a first carrier functional layer; A second electrode is formed on the first carrier functional layer to obtain a photoelectric device.

13. The preparation method according to claim 12, characterized in that: The first optical fiber comprises one or more of a silicate optical fiber, a fluoride optical fiber and a quartz optical fiber; and / or The length of the connection between the first and the second ends of the first optical fiber is 10 nm to 30 nm; and / or The average diameter of the first optical fiber is 1 μm to 100 μm; and / or The thickness of the first carrier functional layer is 30nm to 50nm; and / or The volume ratio of the first carrier functional material to the first optical fiber is 10:(0.1-1); and / or The first optical fibers are arranged in a linear array in the first carrier functional layer.

14. The preparation method according to claim 12, characterized in that: The first optical fiber includes a first charged optical fiber, and the forming of the first carrier functional layer includes: arranging the first charged optical fiber and the first carrier functional material on the optoelectronic device preform, applying an electric field and / or a magnetic field to form the first carrier functional layer.

15. The preparation method according to claim 14, characterized in that: The strength of the electric field is 10 2 V / m~10 3 V / m; and / or The intensity of the magnetic field is 0.1T to 1T; and / or The angle between the direction of the electric field and the thickness direction of the photoelectric device is 0° to 5°; and / or The angle between the direction of the magnetic field and the thickness direction of the photoelectric device is 0° to 5°; and / or The time for applying the electric field and / or magnetic field is 10s to 300s.

16. The preparation method according to claim 12, characterized in that: The photoelectric device preform further comprises a second carrier functional layer and a light-emitting layer sequentially stacked on the first electrode; The first carrier functional layer is a first hole functional layer, and the second carrier functional layer is a second electron functional layer; or, the first carrier functional layer is a first electron functional layer, and the second carrier functional layer is a second hole functional layer.

17. The preparation method according to claim 12, characterized in that: After forming the second electrode, the method further includes forming a packaging layer on the second electrode, including: providing a second optical fiber and a packaging material, arranging the second optical fiber and the packaging material on the second electrode to form a packaging layer, and obtaining a photoelectric device.

18. The preparation method according to claim 17, characterized in that: The second optical fiber includes a second charged optical fiber, and the forming of the encapsulation layer includes: arranging the second charged optical fiber and the encapsulation material on the second electrode, applying an electric field and / or a magnetic field to form the encapsulation layer.

19. The preparation method according to claim 17, characterized in that: The second optical fiber comprises one or more of a silicate optical fiber, a fluoride optical fiber and a quartz optical fiber; and / or The connecting length between the head and tail ends of the second optical fiber is less than or equal to the thickness of the packaging layer; and / or The packaging material includes one or more of epoxy resin, acrylic resin, polyester, polycarbonate, polypropylene, and polyethylene; and / or The volume ratio of the packaging material to the second optical fiber is 10:(0.1-1.5); and / or The second optical fibers are arranged in a linear array in the packaging layer.

20. A display device, characterized in that: The invention comprises a photoelectric device as claimed in any one of claims 1 to 11, or a photoelectric device prepared by the preparation method as claimed in any one of claims 12 to 19.

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