Vcsel element, sensor device, electronic device and user interface

Abstract

A VCSEL element (10) comprises a VCSEL device (100) attached on a substrate (110) which is transparent to electromagnetic radiation (16) emitted by the VCSEL device (100) and has a lens (113) for deflecting the electromagnetic radiation (16) emitted by the VCSEL device (100). The lens (113) is arranged on a side of the substrate (110) facing away from the VCSEL device (100), and a position of the aperture (106) of the VCSEL device (100) is moved horizontally with respect to an optical axis (115) of the lens (113).

Description

Technical Field

[0001] The sensor device (e.g. as a component of an electronic device for entertainment electronics) measures the smallest deflection of the housing using optical means. As the measuring principle, for example, so-called SMI ("self-mixing interferometry") is used. In this case, for example, electromagnetic radiation emitted by a VCSEL (vertical cavity surface emitting laser) impinges on the housing, is reflected from the housing and superimposed with the emitted radiation. Information about the deflection of the housing is determined by evaluating the superimposed signal.

[0002] In general, efforts are being made to provide improved sensor devices and improved VCSEL components. Summary of the invention

[0003] The object of the present invention is to provide an improved VCSEL element, an improved sensor device, an improved electronic device and an improved user interface.

[0004] According to an embodiment, this object is achieved by the subject matter of the independent patent claims.

[0005] Advantageous developments are defined in the dependent claims.

[0006] A VCSEL element comprises a VCSEL device attached to a substrate, the substrate being transparent to electromagnetic radiation emitted by the VCSEL device and having a lens for deflecting the electromagnetic radiation emitted by the VCSEL device. The lens is arranged on the side of the substrate facing away from the VCSEL device. The position of the hole of the VCSEL device is horizontally offset relative to the optical axis of the lens. For example, the position of the hole of the VCSEL device is shifted along the substrate surface relative to the optical axis of the lens.

[0007] According to an embodiment, the sensor device comprises a first VCSEL device and a second VCSEL device attached to a common substrate, the substrate being transparent for electromagnetic radiation emitted by the VCSEL device and comprising a first lens and a second lens. The first lens is arranged to deflect the electromagnetic radiation emitted by the first VCSEL device, and the second lens is arranged to deflect the electromagnetic radiation emitted by the second VCSEL device. The first lens and the second lens are arranged on a side of the substrate facing away from the VCSEL device. The position of the hole of the first VCSEL device is shifted relative to the optical axis of the first lens, and the position of the hole of the second VCSEL device is shifted relative to the optical axis of the second lens. The first VCSEL device and the second VCSEL device can be arranged, for example, so that the hole of the first VCSEL device and the hole of the second VCSEL device are arranged at a distance, which is less than the distance of the optical axes of the first lens and the second lens.

[0008] The lenses described herein are suitable for deflecting radiation emitted by an associated VCSEL device. For example, the lens can be suitable for focusing, substantially focusing, collimating or substantially collimating electromagnetic radiation. Any other type of radiation deflection or orientation is also included.

[0009] According to a further embodiment, the connecting line between the hole of the first VCSEL arrangement and the hole of the second VCSEL arrangement can be different from the connecting line between the optical axis of the first lens and the optical axis of the second lens. In addition, the sensor device can have a voltage source, wherein the first VCSEL arrangement and the second VCSEL arrangement can be controlled jointly by the voltage source.

[0010] According to a further embodiment, the first VCSEL device and the second VCSEL device are each independently controllable by a voltage source.

[0011] According to an embodiment, a first interference signal can be obtained, which interference signal is obtained by coherently superimposing the first radiation emitted by the first VCSEL device with a first reflection signal, which is obtained when the first radiation is reflected at the object, and a second interference signal, which is obtained by coherently superimposing the radiation emitted by the second VCSEL device with a second reflection signal, which is obtained when the second radiation is reflected at the object. The first reflection signal and the second reflection signal can be determined by respectively reading out the voltage signals on the first VCSEL device and the second VCSEL device.

[0012] Furthermore, the sensor device can have a first detector for indicating a first interference signal, which is obtained by coherent superposition of first radiation emitted by the first VCSEL device and a first reflection signal, which is obtained when the first radiation is reflected at the object. Furthermore, the sensor device can contain a second detector for indicating a second interference signal, which is obtained by coherent superposition of radiation emitted by the second VCSEL device and a second reflection signal, which is obtained when the second radiation is reflected at the object.

[0013] According to an embodiment, an electronic device includes the sensor device described above and a housing.

[0014] For example, radiation emitted by the first VCSEL arrangement and the second VCSEL arrangement can each be reflected at the housing.

[0015] According to an embodiment, the housing can be transparent to the electromagnetic radiation emitted by the first VCSEL device and the second VCSEL device.The electromagnetic radiation emitted by the first VCSEL device and the second VCSEL device can each be reflected at an object outside the housing.

[0016] For example, the user interface can have the above-mentioned electronic device.The user input can be implemented via a local deformation of the housing.

[0017] According to a further embodiment, the electromagnetic radiation emitted by the first VCSEL arrangement and the second VCSEL arrangement can each be reflected at a finger. In this case, the user input can be implemented via a movement of the finger. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are used to understand the embodiments of the present invention. The accompanying drawings illustrate the embodiments and are used together with the description to explain these embodiments. Other embodiments and expected advantages are directly derived from the detailed description below. The elements and structures shown in the accompanying drawings are not necessarily drawn to scale with each other. The same reference numerals indicate the same or corresponding elements and structures.

[0019] Figure 1A A schematic cross-sectional view of a VCSEL element according to an embodiment is shown.

[0020] Figure 1B A schematic cross-sectional view of a VCSEL device is shown.

[0021] Figure 2A A schematic view of a sensor device according to an embodiment is shown.

[0022] Figure 2B A schematic illustration of a sensor system element according to further specific embodiments is shown.

[0023] Figure 2C A schematic plan view of a sensor system element according to further specific embodiments is shown.

[0024] Figure 2D The measuring principle of the sensor device is explained.

[0025] Figure 3 A schematic cross-sectional view of a portion of an electronic device is shown.

[0026] Figure 4A and Figure 4B A cross-sectional view for illustration of a VCSEL device fabricated according to an embodiment is shown. DETAILED DESCRIPTION

[0027] In the detailed description hereinafter, reference is made to the accompanying drawings, which form part of the present disclosure and are shown in the drawings for illustrating specific embodiments. In this context, directional terms such as "upper side", "bottom", "front side", "rear side", "above", "above", "front", "rear", "front", "rear", etc. are based on describing the orientation of the drawings just described. Because the components of the embodiments can be positioned in different orientations, the directional terms are only used for illustration and are not limiting at all.

[0028] The description of the embodiment is not restrictive, because there are other embodiments, and structural or logical changes can be made without departing from the scope defined by the claims. In particular, the elements in the embodiments described below can be combined with the elements of other described embodiments as long as it is not otherwise apparent from the context.

[0029] The term "wafer" or "semiconductor substrate" used in the following description can include any semiconductor-based structure having a semiconductor surface. Wafers and structures are understood to include doped and undoped semiconductors, epitaxial semiconductor layers (supported by a substrate if necessary), and other semiconductor structures. For example, a layer consisting of a first semiconductor material can be grown on a growth substrate consisting of a second semiconductor material (e.g., a GaAs substrate, a GaN substrate, or a Si substrate) or of an insulating material (e.g., a sapphire substrate).

[0030] Depending on the purpose of use, semiconductors can be based on direct or indirect semiconductor materials. Examples of semiconductor materials that are particularly suitable for generating electromagnetic radiation include nitride semiconductor compounds, through which ultraviolet light, blue light or light of longer wavelengths can be generated, such as, for example, GaN, InGaN, AlN, AlGaN, AlGaInN, AlGaInBN, phosphide semiconductor compounds, through which green light or light of longer wavelengths can be generated, such as, for example, GaAsP, AlGaInP, GaP, AlGaP, and other semiconductor materials such as GaAs, AlGaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga2O3, diamond, hexagonal boron nitride and combinations of the above materials. The stoichiometric ratio of compound semiconductor materials can vary. Other examples for semiconductor materials can include silicon, silicon germanium and germanium. In the context of this specification, the term "semiconductor" also includes organic semiconductor materials.

[0031] The term "substrate" generally includes an insulating substrate, a conductive substrate, or a semiconductor substrate.

[0032] As used in this specification the terms "lateral" and "horizontal" shall describe an orientation or position which is substantially parallel to a first surface of a substrate or semiconductor body. This can be, for example, the surface of a wafer or chip (die).

[0033] The horizontal direction can lie, for example, in a plane perpendicular to the growth direction during layer growth.

[0034] The term "vertical", such as this term is used in this specification, shall describe an orientation, which is substantially perpendicular to the first surface of the substrate or semiconductor body. The vertical direction can correspond, for example, to a growth direction in the case of layer growth.

[0035] Figure 1A A schematic cross-sectional view of a VCSEL element 10 according to an embodiment is shown. The VCSEL element 10 comprises a VCSEL device 100 attached to a substrate 110, which is transparent to electromagnetic radiation emitted by the VCSEL device 100. In addition, the VCSEL element 10 comprises a lens 113 for deflecting (e.g. focusing the electromagnetic radiation emitted by the VCSEL device 100). The lens 113 is arranged on the side of the substrate 110 facing away from the VCSEL device 100. For example, the VCSEL device 100 is arranged on the second main surface 112 of the substrate, and the lens 113 is arranged on the first main surface 111 of the substrate 110. The position of the hole of the VCSEL device 100 is moved relative to the optical axis 115 of the lens. For example, the distance between the optical axis 115 and the hole 106 of the VCSEL device 100 can be d. For example, d can be greater than 2 μm or greater than 5 μm. In addition, d can be less than 20 μm or less than 15 μm. Typical values ​​can be, for example, about 10 μm.

[0036] Figure 1B An example of a VCSEL element 100 is shown, which can be, for example, Figure 1A Components of a VCSEL element shown in FIG. The VCSEL device 100 includes a semiconductor stack having a first semiconductor layer 101 of a first conductivity type (e.g., a p-type conductor) and a second semiconductor layer 102 of a second conductivity type (e.g., an n-type conductor). An active region 103 is arranged between the first semiconductor layer 101 and the second semiconductor layer 102.

[0037] The active region 103 can have, for example, a pn junction, a double heterostructure, a single quantum well structure (SQW) or a multi quantum well structure (MQW) to generate radiation. Here, the name "quantum well structure" has no specific meaning in terms of the quantized dimension. Therefore, it includes but is not limited to quantum grooves, quantum wires and quantum dots and any combination of these layers.

[0038] The first resonant mirror 104 is arranged in the first semiconductor layer 101 in a neighboring or adjacent manner. The second resonant mirror 105 is arranged in the second semiconductor layer 102 in a neighboring or adjacent manner. For example, the first resonant mirror 104 and the second resonant mirror 105 can now be designed as dielectric mirror layers, and each has a plurality of dielectric layers with corresponding different refractive indices.

[0039] Generally speaking, the term "dielectric mirror layer" includes any arrangement that reflects incident electromagnetic radiation to a large extent (e.g., >90%) and is non-conductive. For example, a dielectric mirror layer can be formed by a series of very thin dielectric layers with corresponding different refractive indices. For example, the layer can alternately have a high refractive index (n>n0) and a low refractive index (n<n0), and is designed as a Bragg reflector. For example, the layer thickness can be λ / 4, where λ is the wavelength of the light to be reflected in the corresponding medium. The layer seen from the incident light can have a greater layer thickness (e.g., 3λ / 4). Due to the small layer thickness and the difference in the corresponding refractive indices, the dielectric mirror layer provides a high reflection ability and is non-conductive at the same time. The dielectric mirror layer can have, for example, 2 to 50 dielectric layers. The typical layer thickness of a single layer can be about 30 nm to 90 nm, for example, about 50 nm. In addition, the layer stack can include one or two or more layers that are thicker than about 180 nm, for example, thicker than 200 nm.

[0040] According to other design schemes, the layers of the resonant mirror 104 and the resonant mirror 105 can also include semiconductor layers.

[0041] Electromagnetic radiation 16 is emitted when a voltage is applied between the first semiconductor layer and the second semiconductor layer 102. Here, an optical resonator is formed in the vertical direction (i.e., perpendicular to the surface of the individual layers). The hole 106 can be formed, for example, in the barrier layer 109, that is, in a layer that is impenetrable to electromagnetic radiation. The electromagnetic radiation is emitted through the hole 106. For example, the diameter of the hole 106 can be greater than 2 μm. For example, the diameter of the hole 106 can be less than 8 μm. For example, the diameter of the hole 106 can be approximately 4 μm. The barrier layer 109 can be arranged according to the design scheme on the side facing the first semiconductor layer 101 or the first resonant mirror 104 facing away from the first semiconductor layer. According to the design scheme, the term "hole" refers to the emission region of the VCSEL device.

[0042] For example, a voltage can be applied via a voltage source 108. For example, the connections of the voltage source 108 can be connected to the first semiconductor layer 101 and the second semiconductor layer 102 via suitable contact regions. In addition, the VCSEL device 100 can have a detector 116, for example, a photodiode which can be monolithically integrated with the VCSEL device 100. The detector 116 can, for example, indicate an interference signal generated by so-called SMI (self-mixing interference), in which the emitted radiation and the reflected radiation are coherently superimposed. According to other embodiments, the signal generated by SMI can also be indicated by the VCSEL device 100 itself, for example, by determining a change in a voltage signal, for example, by the voltage source 108 or a component of the voltage source.

[0043] The indicated signal can be evaluated, for example, by an evaluation circuit 119. The evaluation circuit 119 can be connected to the voltage source 108. In particular, information about the height of the applied voltage can be conveyed to the evaluation circuit.

[0044] Through Figure 1A As shown, the position of the aperture 106 of the VCSEL device 100 is shifted relative to the optical axis 115 of the lens 113, and the emission radiation 16 is refracted toward the optical axis at the interface 114 between the lens 113 and the surrounding air. Accordingly, it is possible to deflect the emission radiation 16.

[0045] Using the VCSEL elements 10 shown, it is possible, for example, to arrange a plurality of VCSEL elements 10 in a spatially dense manner and to simultaneously generate the generated radiation 16 at an increased spatial distance.

[0046] Figure 2A A sensor device 15 according to an embodiment is shown. Figure 2A The sensor device 15 shown in 1001 comprises a first VCSEL device 1001 and a second VCSEL device 1002. The first VCSEL device 1001 and the second VCSEL device 1002 are attached at a common substrate 110. The common substrate 110 is transparent for the electromagnetic radiation 16 emitted by the VCSEL devices 1001,1002.

[0047] Furthermore, the sensor device 15 comprises a first lens 1131 and a second lens 1132. The first lens 1131 is arranged to deflect, for example, focus, electromagnetic radiation emitted by the first VCSEL device 101. The second lens 1132 is configured to deflect, for example, focus, electromagnetic radiation emitted by the second VCSEL device 1002. The first lens 1131 and the second lens 1132 are arranged on a side of the substrate 110 facing away from the VCSEL devices 1001, 1002. The position of the hole of the first VCSEL device 1001 is shifted by a spacing d1 relative to the optical axis 115 of the first lens 1131. Furthermore, the position of the hole of the second VCSEL device 1002 is shifted by a spacing d2 relative to the optical axis 115 of the second lens 1132. For example, the spacing d1 and the spacing d2 can be equal to each other. According to other embodiments, the spacing d1 and the spacing d2 can also be different from each other.

[0048] For example, the first VCSEL device 1001 and the second VCSEL device 1002 are arranged such that the hole of the first VCSEL device 1001 and the hole of the second VCSEL device 1002 are arranged at a distance that is smaller than the distance between the optical axes of the first lens and the second lens. For example, the first VCSEL device 1001 and the second VCSEL device 1002 are facing each other, that is, the first VCSEL device 1001 or the hole of the first VCSEL device 1001 is arranged on the side of the optical axis 115 of the associated first lens 1131, which faces the second lens 1132. In addition, the second VCSEL device 1002 or the hole of the second VCSEL device 1002 is arranged on the side of the optical axis 115 of the second lens 1132, which faces the first lens 1131.

[0049] In this way, it is possible to arrange individual VCSEL arrangements at small distances, while electromagnetic radiation 16 is correspondingly emitted at large distances.

[0050] with Figure 1B Similar to the illustration, according to an embodiment, the first VCSEL device 1001 also has a first detector 1161. In addition, the second VCSEL device 1002 can have a second detector 1162. In addition, the sensor device 15 can have a voltage source 108, which is used to operate the first VCSEL device 1001 and the second VCSEL device 1002. For example, the first VCSEL device 1001 can be operated independently of the second VCSEL device 1002 by the voltage source 108. However, according to other embodiments, the two VCSEL devices can also be operated together. The evaluation circuit 119 can be connected to the voltage source 108, for example, and is also suitable for evaluating the signals of the detectors 1161, 1162.

[0051] Depending on the embodiment, the signal generated by the SMI can also be detected by the VCSEL arrangement 1001 , 1002 and read out via a voltage signal. For example, the evaluation circuit 119 can be connected to the voltage source 108 and can also be suitable for reading out the determined voltage signal.

[0052] In the case of an optical sensor device, for example, which indicates a local deformation of a housing or a movement of a finger and which is based on self-mixing interference, at least two measuring points are preferably used to improve the accuracy and reliability of the measurement. Figure 2A , by arranging the first VCSEL device 1001 and the second VCSEL device 1002 in the manner described, it is possible to arrange the individual VCSEL devices at a small distance and provide a minimum distance of the corresponding measuring points, even when the reflective housing or the finger has a short distance (e.g. less than about 10 cm). In addition, by Figure 2A The sensor device shown in embodies the first VCSEL device 1001 and the second VCSEL device 1002 on a common VCSEL chip. In this way, the sensor device can be implemented as a VCSEL chip having a small size.

[0053] In addition, as in Figure 2A It is shown that, depending on the curvature of the corresponding lens 113, the distance d between the hole 106 and the optical axis 115 of the lens can be selected so that the angle α between the emission direction of the emitted laser radiation 16 and the optical axis 115 is greater than 20°, for example, the angle is greater than 30°, for example, the angle is about 35°.

[0054] The distance between the apertures of the first VCSEL device 1001 and the second VCSEL device 1002 can be, for example, less than 50 μm. The radiation 16 emitted by the second VCSEL device 1002 can be deflected, for example, into a direction that is offset by −α relative to the optical axis 115 of the second lens 1132. The radiation 16 emitted by the second VCSEL device 1001 can, for example, be mutually opposite to the radiation emitted by the VCSEL device 1001.

[0055] exist Figure 2A In FIG. 1 , VCSEL devices 1001 and 1002 are each shown as independent components. According to other embodiments, they can also have common layers and be electrically isolated from each other.

[0056] Figure 2B FIG. 1 shows a further example of an arrangement of VCSEL devices 1001 , 1002 in the context of a sensor device 15 according to other specific embodiments. Figure 2B The sensor device 15 shown in FIG. 1 can have, for example, the same Figure 2AAs in the sensor device 15 shown in Figure 2B As shown in FIG. 1 , VCSEL devices 1001 , 1002 can also be arranged such that the distance between holes 106 is greater than the distance between optical axes 115 of associated lenses 1131 , 1132 .

[0057] Figure 2C A schematic top view of elements of a sensor device 15 according to an embodiment is shown. Figure 2C 1001 and 1002 can be different from the connection line 117 between the optical axis 115 of the first lens 1131 and the optical axis 115 of the second lens 1132. For example, the two connection lines can intersect each other or move parallel to each other. According to other designs, the spacing between the holes 106 of the first VCSEL device 1001 and the second VCSEL device 1002 can be different from or the same as the spacing between the optical axes 115 of the first lens 1131 and the second lens 1132.

[0058] Figure 2D Shown using Figure 2A The measurement arrangement of the VCSEL arrangement shown. Radiation 16 is emitted by the VCSEL 100. This radiation is reflected on the object 20, so that reflected radiation 17 is generated. The detector 116 is suitable for detecting the superposition signal of the emitted radiation 16 and the reflected radiation 17. Figure 2D The VCSEL device 100 shown in FIG. Figure 1B The VCSEL device shown in FIG. 1 is similar in components to that shown in FIG. 1 , so that a detailed description is omitted.

[0059] Figure 3 A portion of the electronic device 30 or the user interface 35 is shown. Figure 2A The sensor device 15 is described as being attached to a suitable carrier 123. The VCSEL devices 1001, 1002 can be arranged between the carrier 123 and the substrate 110. As in Figure 3 It is indicated that the VCSEL devices 1001 , 1002 can be respectively designed as independent components or have a common layer.

[0060] The housing 120 is arranged above the sensor device 15. For example, the sensor device 15 can be arranged in the electronic device 30, and the housing 120 simultaneously constitutes the housing of the electronic device 120. Figure 3As further shown, finger 121 moves in the direction of the arrow and exerts pressure in the direction of sensor device 15. As a result, the distance between housing 120 and sensor device 15 decreases. The position of first measuring point 122 is defined by the position of the intersection of radiation 16 emitted by first VCSEL device 1001 with housing 120. Furthermore, the position of second measuring point 124 is defined by the position of the intersection of radiation 16 emitted by second VCSEL device 1002 with housing 120.

[0061] Typically, the first measuring point 122 and the second measuring point 124 can have a distance of at least 1 mm, for example 2 mm. Figure 2A As described, the respective apertures of the first VCSEL device 1001 and the second VCSEL device 1002 are shifted relative to the optical axis of the lens 113 , this minimum distance can be maintained even when the first VCSEL device 1001 and the second VCSEL device 1002 are arranged on a common chip, thereby being implemented in a particularly space-saving manner.

[0062] For example, the movement of a finger can be determined, i.e. the distance and speed of the finger, by modulating the output power of the VCSEL or the forward voltage of the VCSEL and evaluating the signal indicated by the detectors 1161, 1162. These concepts are known and the term "FMCW-LIDAR" (frequency modulated continuous wave LIDAR) is used in detail.

[0063] According to an embodiment, as described above, the VCSEL devices 1001, 1002 are capable of indicating the generated SMI signal by the change of the voltage signal itself. In this case, separate detectors 1161, 1162 are not required.

[0064] Figure 3 The arrangement shown can be part of an electronic device, for example a portable terminal, a smartphone, a camera or, for example, a headset.

[0065] According to other embodiments, Figure 3 The arrangement shown also provides a user interface 35. For example, in the case of wireless headphones or in-ear headphones, commands can be input by pressing on the housing. In this case, user input can be performed by the movement of a finger, for example, in order to adjust the volume or cause other controls.

[0066] According to an embodiment, the housing 120 can be light-tight. In this case, the deflection of the housing 120 is measured and results in the generation of the required signal.

[0067] According to other embodiments, the housing 120 can also be transparent. In this case, for example, the emitted electromagnetic radiation 16 can be reflected at the finger 121, thereby resulting in the generation of the desired signal. The first measurement point 122 can correspond to the intersection of the radiation 16 emitted by the first VCSEL device 1001 and the finger. The second measurement point 124 can correspond to the intersection of the radiation 16 emitted by the second VCSEL device 1002 and the finger.

[0068] FIG. 4A to FIG. 4B An example of a method for producing a sensor device or an arrangement of VCSEL elements according to an embodiment is shown.

[0069] As in Figure 4A , firstly layers are constructed which construct the respective VCSEL devices 1001, 1002 on a wafer layer on a substrate 110 which serves as a growth substrate and is transparent for the electromagnetic radiation emitted by the VCSEL device 100. The associated processes are generally known, so that a detailed description is omitted.

[0070] The substrate 110 is thinned and subsequently etched to form the lens 113. Furthermore, the semiconductor layer stacks associated with the individual VCSEL devices 1001, 1002 are each separated from one another and electrically isolated, for example by etching mesas. Figure 4B The etching of the lens 113 is performed such that the optical axis 115 of the individual lens is shifted relative to the aperture 106 of the individual laser device 100 , as explained above.

[0071] Although specific embodiments are shown and described herein, those skilled in the art will recognize that the specific embodiments shown and described can be replaced with many alternative and / or equivalent designs without departing from the scope of the invention. The present application is intended to cover any adjustments or variations to the specific embodiments discussed herein. Therefore, the present invention is limited only by the claims and their equivalents.

[0072] Reference numerals list

[0073] 10VCSEL components

[0074] 15 Sensor device

[0075] 16 Emitting Radiation

[0076] 17 Reflected Radiation

[0077] 20 Objects

[0078] 30 Electronic devices

[0079] 35 User Interface

[0080] 100VCSEL device

[0081] 1001First VCSEL device

[0082] 1002 Second VCSEL Device

[0083] 101 First semiconductor layer

[0084] 102 Second semiconductor layer

[0085] 103 Active Area

[0086] 104 First resonant mirror

[0087] 105 Second resonant mirror

[0088] 106 holes

[0089] 108 Voltage Source

[0090] 109 Barrier layer

[0091] 110 Base

[0092] 111 first main surface

[0093] 112 second main surface

[0094] 113 Lens

[0095] 1131 First lens

[0096] 1132 Second lens

[0097] 114 lens surface

[0098] 115 Optical axis

[0099] 116 Detector

[0100] 1161 First Detector

[0101] 1162 Second Detector

[0102] 117 Connection line between optical axes

[0103] 118 Connection lines between holes

[0104] 119 Evaluation circuit

[0105] 120 Shell

[0106] 121 fingers

[0107] 122 First measuring point

[0108] 123 Carrier

[0109] 124 Second measuring point.

Claims

1. An electronic device (30), comprising a sensor device (15) and a housing (120), wherein: The sensor device (15) comprises: A first VCSEL device and a second VCSEL device (1001, 1002), the first VCSEL device and the second VCSEL device being designed in a common chip and attached to a common substrate (110), the substrate being transparent to the electromagnetic radiation (16) emitted by the VCSEL devices (1001, 1002); and a first lens and a second lens (1131, 1132), wherein the first lens (1131) is configured to deflect electromagnetic radiation (16) emitted by the first VCSEL device (1001), and the second lens (1132) is configured to deflect electromagnetic radiation (16) emitted by the second VCSEL device (1002), The first lens and the second lens (1131, 1132) are arranged on the side of the substrate (110) facing away from the VCSEL device (1001, 1002), the position of the hole (106) of the first VCSEL device (1001) moves relative to the optical axis (115) of the first lens (1131), and the position of the hole (106) of the second VCSEL device (1002) moves relative to the optical axis (115) of the second lens (113), wherein the radiation (16) emitted by the first VCSEL device and the second VCSEL device (1001, 1002) are respectively reflected at the housing (120) or at an object located on the housing.

2. The electronic device (30) according to claim 1, wherein: The first VCSEL device and the second VCSEL device (1001, 1002) are arranged such that a spacing between an aperture (106) of the first VCSEL device (1001) and an aperture (106) of the second VCSEL device (1002) is different from a spacing between an optical axis of the first lens and an optical axis (115) of the second lens (1131, 1132).

3. The electronic device (30) according to claim 1 or 2, wherein: A connecting line (118) between the hole (106) of the first VCSEL device (1001) and the hole (106) of the second VCSEL device (1002) is different from a connecting line (117) between the optical axis (115) of the first lens (1131) and the optical axis (115) of the second lens (1132).

4. The electronic device (30) according to claim 2 or 3, wherein: The distance between the hole (106) of the first VCSEL device (1001) and the hole (106) of the second VCSEL device (1002) is smaller than the distance between the optical axis of the first lens and the optical axis (115) of the second lens (1131, 1132).

5. The electronic device (30) according to any one of claims 1 to 4, further comprising a first detector (1161), the first detector being used to indicate a first interference signal, the first interference signal being obtained by coherent superposition of first radiation (16) emitted by the first VCSEL device (1001) and a first reflection signal (17), the first reflection signal being obtained when the first radiation (16) is reflected at an object (20), and the electronic device further comprising a second detector (1162), the second detector being used to indicate a second interference signal, the second interference signal being obtained by coherent superposition of radiation emitted by the second VCSEL device (1002) and a second reflection signal (17), the second reflection signal being obtained when the second radiation (16) is reflected at the object (20).

6. The electronic device (30) according to any one of claims 1 to 5, further comprising a voltage source (108), wherein: The first VCSEL device and the second VCSEL device (1001, 1002) are commonly controllable by the voltage source (108).

7. The electronic device (30) according to any one of claims 1 to 5, further comprising a voltage source (108), wherein: The first VCSEL device and the second VCSEL device (1001, 1002) can be controlled by the voltage source (108) in a manner separate from each other.

8. The electronic device (30) according to claim 6 or 7, wherein: A first interference signal is obtained by coherently superimposing first radiation (16) emitted by the first VCSEL device (1001) with a first reflection signal (17), the first reflection signal being obtained when the first radiation (16) is reflected at an object (20), and a second interference signal is obtained by coherently superimposing radiation emitted by the second VCSEL device (1002) with a second reflection signal (17), the second reflection signal being obtained when the second radiation (16) is reflected at the object (20), the first reflection signal and the second reflection signal being determinable by reading out voltage signals at the first VCSEL device and the second VCSEL device (1001, 1002), respectively.

9. A user interface (35) comprising an electronic device (30) according to any one of claims 1 to 8, wherein: User input is achieved via local deformation of the housing (120).

10. A user interface (35) comprising an electronic device (30) according to any one of claims 1 to 8, wherein: Electromagnetic radiation (16) emitted by the first VCSEL device and the second VCSEL device (1001, 1002) is respectively reflected at a finger, and a user input is achieved via movement of the finger.

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